Detailed Information

Research Field/Keywords for Research Field

• Electronic devices: High power and high frequency devices, Analysis and design of electronic devices, Device modeling for circuit, Device integration technology

Education

• 1984/03, Department of Electrical Engineering, Graduated
• 1986/03, Department of Electrical Engineering, Master Course, Completed

Employment Experience

• 1986/04 - 1993/05 R&D engineer Central Research Laboratory Mitsubishi Electric Corporation
• 1993/06 - 1999/05 R&D engineer Semiconductor Research Laboratory Mitsubishi Electric Corporation
• 1999/06 - 2005/09 R&D engineer Advanced Technology R&D Center Mitsubishi Electric Corporation
• 2005/04 - 2007/03 Visiting researcher
• 2005/10 - 2008/09 Device technology manager Advanced Technology R&D Center Mitsubishi Electric Corporation
• 2008/10 - 2011/09 R&D engineer Information Technology R&D Center Mitsubishi Electric Corporation
• 2011/10 - 2014/02 Chief engineer Information Technology R&D Center Mitsubishi Electric Corporation
• 2013/09 - 2014/01 Part-time lecturer
• 2014/03 -  *  Professor, Electrical and Electronic Engineering , Graduate School of Science and Engineering, Saga University

Field of Specialization

• Electron device/Electronic equipment, Electronic materials/Electric materials, Power engineering/Power conversion/Electric machinery, Inorganic materials/Physical properties, Physical properties of metals/Metal-base materials

Membership in Academic Societies

• IEEE

Themes for Ongoing Research

• High frequency and high power electric device if wide bandgap semiconductor

Research Topics and Results

• トラップの非線形容量への影響を考慮したGaN-HEMT大信号コンパクトモデル 2021/12
• Bias Dependence Model of Peak Frequency of GaN Trap in GaN HEMTs Using Low-Frequency Y22 Parameters 2021/10
• Microwave Power Rectification using β-Ga2O3 Schottky barrier diodes 2019/09
• GaN HEMTのGaNトラップのY22/Y21信号と過渡応答特性比較 -マルチバイアスでの比較- 2024/03
• Drain bias dependence of Y22 and Y21 signals at low frequency for on-state conditions in AlGaN/GaN high electron mobility transistors 2024/01
• Quasi-Physical Equivalent Circuit Model of RF Leakage Current in Substrate Including Temperature Dependence for GaN-HEMT on Si 2023/05
• A simulation study of the impact of traps in the GaN substrate on the electrical characteristics of an AlGaN/GaN HEMT with a thin channel layer 2021/12
• Study on Effects of GaN Trap Depth Profiles to Transient Response in GaN HEMTs on GaN Substrates by Device Simulation 2020/09
• Study on Self-heating and Drain Voltage Effects for Buffer Traps in GaN HEMTs by Low Frequency S-parameter Measurements 2020/09
• 大電力レクテナ用スーパーワイドバンドギャップ半導体デバイスの研究開発の状況 2019/11
• Study of Self-heating Effect of GaN HEMTs with Buffer Traps by Low Frequency S-parameters Measurements and TCAD Simulation 2019/11
• Response for sine wave input to Ga2O3 SBDs 2018/12
• Calculation of RF-DC conversion efficiency using diamond diodes by circuit simulation 2018/12
• Effect of transient response and frequency response on buffer traps in GaN HEMTs 2018/12
• Study on influence of damage area on electrical aharacteristics of diamond MOSFET 2018/12
• RF-DC conversion using single-shunt rectifying circuit with cascode configuration composed of GaN HEMT and Si SBD 2018/12
• Device Modeling for GaN HEMTs 2018/11
• Present Status of Research and Development of Super wide bandgap electron devices 2018/11
• Ka-band GaN Large-Signal Model Considering Trap Effect on Non-linear Capacitance by Using Transient S-parameters Measurement 2018/10
• GaN HEMTのゲート形状とゲート金属残留応力がゲートリーク電流に与える影響のデバイスシミュレーションによる検討 2017/09
• AlGaN/GaN HEMTの電気的特性に対する保護膜残留応力依存性 －TCADシミュレーションによる検討－ 2017/01
• Diamond Schottky Barrier Diodes With NO2 Exposed Surface and RF-DC Conversion Toward High Power Rectenna 2017/01
• Physical Model of RF Leakage in GaN HEMTs on Si Substrates Based on Atomic Diffusion Analysis at Buffer/Substrate Interface 2016/10
• 表面伝導型ダイヤモンドFETのデバイスシミレーションに関する検討 2016/05
• Si基板中キャリアの温度依存特性を考慮したGaN-on-Siのモデリング 2016/03
• ダイヤモンド素子を用いたレクテナ回路の作製 2016/03
• 効率無線電力伝送を目指したダイヤモンド・レクテナデバイスの提案 2016/03
• 将来が期待される萌芽的デバイス　–さらなる高出力高周波化に向けて- 2015/09
• Simulation study of NO2-exposed H-terminated diamond FETs with Al2O3 insulator gate 2015/06
• Modeling of Frequency Dispersion at Low Frequency for GaN HEMT 2014/11
• Decrease in on-state gate current of AlGaN/GaN HEMTs by recombination-enhanced defect reaction of generated hot carriers investigated by TCAD simulation 2014/10
• Decrease in on-state gate current of AlGaN/GaN HEMTs by recombination-enhanced defect reaction of generated hot carriers investigated by TCAD simulation 2014
• Decrease in On-State Gate Current of AlGaN/GaN HEMTs by Recombination-Enhanced Defect Reaction of Generated Hot Carriers 2014
• Analysis on trade-off between drain resistance and drain-source capacitance of source field plate GaN HEMT 2013/09
• An Improved Raab Method Taking Account of the Effects of Cutoff Frequency and Parastic Components 2013/09
• Simulation study of gate leakage current under three-terminal operation for AlGaN/GaN HEMTs 2013/09
• TCADシミュレーションを用いたGaN HEMTの半物理的非線形回路モデル 2013/09
• Design of enhancement mode single-gate and double-gate multi-channel GaN HEMT with vertical polarity inversion heterostructure 2013/05
• Analysis of On-state Gate Current of AlGaN/GaN High Electron Mobility Transistor under Electrical and Temperature Stress 2013
• AlGaN/GaN HEMTにおけるドレインリーク電流の解析 2013
• Mechanism Study of Gate Leakage Current for AlGaN/GaN HEMT Structure Under High Reverse Bias by TSB Model and TCAD Simulation 2013
• AlGaN channel HEMT with Extremely High Breakdown Voltage 2013
• Simulation study and reduction of reverse gate leakage current for GaN HEMTs 2012/10
• Analysis on trade-off between electric field and gate-drain capacitance for GaN HEMT by T-CAD simulation 2012/09
• Mechanism study of gate leakage current for AlGaN/GaN HEMT structure under high reverse bias by TSB model and TCAD simulation 2012/09
• デバイスと回路シミュレーションの連携によるGaN HEMTの 半物理的 非線形モデル 2012/07
• Semiconductor device and manufacturing method thereof 2012/04
• 短ゲート化によるSSPS用GaN増幅器の高効率化検討 2012/01
• AlGaN/GaN HEMTのドレインリーク電流解析 2012/01
• Design and simulation of enhancement-mode N-polar GaN single-channel and dual-channel MIS-HEMTs 2011/12
• 「Compact equivalent circuits and table based FET models –Is there one winner for circuit designers and foundries ? 」(2011年6月6日，Baltimore, MD) 　　「Current and future demands for nonlinear modeling for microwave applications」（Additional speakerで講演） 2011/06
• GaN HEMTにおけるゲートリークの解析 2011/03
• Semi-physical nonlinear circuit model with device/physical parameters for HEMTs 2011
• Enhancement of Drain Current by an AlN Spacer Layer Insertion in AlGaN/GaN High-Electron-Mobility Transistors with Si-Ion-Implanted Source/Drain Contacts 2011
• GaN HEMTの半物理的非線形回路モデル 2011
• Semi-physical nonlinear model for HEMTs with simple equations 2010/04
• Siイオン注入ドーピング技術を適用したAlGaN/AlN/GaN HEMT 2009/03
• Drivability Enhancement for AlGaN/GaN High-Electron Mobility Transistors with AlN Spacer Layer Using Si Ion Implantation Doping 2009
• AlGaN channel HEMTs on AlN buffer layer with sufficiently low off-state drain leakage current 2009
• Comparison of characteristics of AlGaN channel HEMTs formed on SiC and sapphire substrates 2009
• AlGaNチャネルHEMTにおけるドレイン耐圧の向上 2008/03
• Remarkable breakdown voltage enhancement in AlGaN channel high electron mobility transistors 2008
• First Operation of AlGaN Channel High Electron Mobility Transistors 2008
• Application of lightly doped drain structure to AlGaN/GaN HEMTs by ion implantation technique 2008
• AlGaNチャネルによるトランジスタの高耐圧化 2008
• Remarkable breakdown voltage enhancement in AlGaN channel HEMTs 2007/12
• First Operation of AlGaN Channel High Electron Mobility Transistors with Sufficiently Low Resistive Source/Drain Contact formed by Si Ion Implantation 2007/09
• Effects of a thin Al layer insertion between AlGaN and Schottky gate on the AlGaN/GaN high electron mobility transistor characteristics 2006
• Ion implantation doping for AlGaN/GaN HEMTs 2006
• 窒化物半導体の高周波・高出力デバイス技術 2005/09
• Ion implantation doping for AlGaN/GaN HEMTs 2005/08
• A C-Band AlGaN/GaN HEMT with Cat-CVD SiN Passivation Developed for an Over 100 W Operation 2005/06
• Cat-CVD法による表面パッシベーション膜を用いた高信頼度GaN HEMT 2005/01
• 注入ドーピングによるGaNトランジスタの高性能化 2005
• A High Reliability GaN HEMT with SiN Passivation by Cat-CVD 2004/10
• AlGaN/GaN HEMT with thermally annealed Ni/Pt/Au Schottky gate 2004/03
• 結晶軸に沿ったZnイオン注入によるGaNの高抵抗化 2004
• Thermal annealing effects on Ni/Au based Schottky contacts on n-GaN and AlGaN/GaN with insertion of high work function metal 2004
• Improvement of DC and RF Characteristics of AlGaN/GaN High Electron Mobility Transistors by Thermally Annealed Ni/Pt/Au Schottky Gate 2004
• Effects of interfacial thin metal layer for high-performance Pt-Au-based Schottky contacts to AlGaN-GaN 2004
• Improvement of DC and RF characteristics of AlGaN/GaN HEMTs by thermally annealed Ni/Pt/Au Schottky gate 2003/09
• Semiconductor device with sidewall spacers and elevated source/drain region 2003/09
• Improvement of Schottky characteristics by insertion of refractory metal into Ni/Au electrode on n-(Al)GaN with thermal annealing 2003/06
• Highly resistive GaN layers formed by ion implantation of Zn along the c axis 2003
• n-(Al)GaN上ショットキー電極の金属膜構成と熱処理依存性 2003
• Semiconductor device manufacturing method 2002/06
• Method of manufacturing semiconductor device 2002/02
• AlGaN/GaN HEMTの素子分離としてのZn注入 2002
• Remarkable effects of introduction of SiON materials into shallow trench isolation fabrication process on metal-oxide-semiconductor field-effect transistors 2001
• 高温超電導薄膜のエッチング方法 2000/10
• Self-Aligned Pocket Implantation into Elevated Source,/Drain MOSFETs for Reduction of Junction Capacitance and Leakage Current 2000/08
• Expansion of effective channel width for MOSFETs defined by novel T-shaped shallow trench isolation fabricated with SiON spacers and liners 2000
• Isolation Edge Effect Depending on Gate Length of MOSFET's with Various Isolation Structures 2000
• 素子分離技術総論 2000
• Effect of <100> channel direction for high performance SCE immune pMOSFET with less than 0.15 μm gate length 1999/12
• Low resistance Co-salicided 0.1 μm CMOS technology using selective Si growth 1999/06
• Simulation Study on Comparison Between Metal Gate and Polysilicon Gate for Sub-Quarter-Micron MOSFET’s 1999
• Experimental study on isolation edge effects in short channel characteristics of metal oxide semiconductor field effect transistors (MOSFETs) 1999
• Advantage of shallow trench isolation over local oxidation of silicon on alignment tolerance 1999
• Noticeable enhancement of edge effect in short channel characteristics of trench-isolated MOSFETs 1998/09
• Gate overlap length reduction and shallow junction formation in high-performance fine MOSFETs by ion implantation through thin oxide film 1998
• Anomalous gate length dependence of threshold voltage of trench-isolated metal oxide semiconductor field effect transistors 1998
• Protection of field oxide in trench isolation against contact hole etching to improve alignment tolerance 1998
• Excellent electrical characteristics of ultrafine trench isolation 1998
• LOCOS分離の限界とトレンチ分離の問題点 1997/12
• Excellent electrical characteristics of ultra-fine trench isolation 1997/05
• Narrow-channel metal oxide semiconductor field effect transistor (MOSFET) isolated by an ultra-fine trench 1997
• Electrical characteristics of ultra-fine trench isolation fabricated by a new two-step filling process 1996/08
• Electrical characteristics of ultra-fine trench isolation fabricated by a new two-step filling process 1996
• Giga-bit scale DRAM cell with new simple Ru/(Ba,Sr)TiO3/Ru stacked capacitors using X-ray lithography 1995/12
• Reactive ion etching of BiSrCaCuO superconducting thin films using ethane and oxygen 1994
• In-Plane Orientation and Coincidence Site Lattice Relation of Bi2Sr2CaCu2Ox Thin Films Formed on Highly Mismatched (001) YAG Substrates 1993/08
• Effect of ethane addition to argon in etching of BiSrCaCuO superconducting thin films 1993
• Dry etching of BiSrCaCuO superconducting thin films using argon and ethane 1992/11
• A novel InGaAsP/InP bistable-bipolar transistor 1990/09
• 微分負性抵抗特性を示すヘテロ接合バイポーラトランジスタ 1990/05
• Open-tube Zn diffusion method for InGaAsP/InP heterojunction bipolar transistors 1990
• Ultra-high current gain InGaAsP/InP heterojunction bipolar transistor 1990
• 開管法によるInP, InGaAsへのZn拡散 1989/09
• GaInAsP/InP heterojunction bipolar transistors with a double layer base 1989
• 多層ベースInGaAsP/InP HBT 1988/11
• Novel fabrication methods of gratings for DFB lasers using ECR-CVD SiNx films 1988/09

Books

• 素子分離技術総論;　2000
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  

Original Articles

• トラップの非線形容量への影響を考慮したGaN-HEMT大信号コンパクトモデル;　2021/12
  ANNOUNCEMENT INFO.;　, J104-C, 12, 343-351
  AUTHOR;　
  
• Bias Dependence Model of Peak Frequency of GaN Trap in GaN HEMTs Using Low-Frequency Y22 Parameters;　2021/10
  ANNOUNCEMENT INFO.;　IEEE Trans. Electron Devices, 68 (2021) pp.5565-5571., 68, 5565-5571.
  AUTHOR;　T. Oishi, T. Otsuka, M. Tabuchi, Y. Yamaguchi, S. Shinjo, and K. Yamanaka
  
• Microwave Power Rectification using β-Ga2O3 Schottky barrier diodes;　2019/09
  ANNOUNCEMENT INFO.;　IEEE Electron Device Lett, 40, 1393
  AUTHOR;　T. Oishi, K. Urata, M. Hashikawa, K. Ajiro and T. Oshima
  
• Drain bias dependence of Y22 and Y21 signals at low frequency for on-state conditions in AlGaN/GaN high electron mobility transistors;　2024/01
  ANNOUNCEMENT INFO.;　Jpn. J. Appl. Phys. , 63, 010905 (2024）, 63, 010905
  AUTHOR;　T.Oishi, S.Takada, K.Kudara, Y.Yamaguch, S.Shinj, and K.Yamanaka
  
• Trapping Compensation for Transient Recovery in GaN LNAs;　2023/11
  ANNOUNCEMENT INFO.;　IEEE Transactions on Microwave Theory and Techniques, ( Early Access )
  AUTHOR;　Yutaro Yamaguchi, Keigo Nakatani, Shitaro Shijo, Toshiyuki Oishi, and Yasuyuki Miyamoto
  
• Stable AC Stress Operation (100 h) of NO2 p-Type Doped Diamond MOSFETs;　2023/10
  ANNOUNCEMENT INFO.;　, 44, 10, 1704
  AUTHOR;　N.C.Saha , T.Shiratsuchi, T.Oishi, and M.Kasu
  
• Long Stress (190 h) Operation of NO2 p-Type Doped Diamond MOSFETs;　2023/06
  ANNOUNCEMENT INFO.;　, 44, 06, 975
  AUTHOR;　N.C.Saha , T.Shiratsuchi, S.-W. Kim , K.Koyama , T.Oishi, and M.Kasu
  
• Quasi-Physical Equivalent Circuit Model of RF Leakage Current in Substrate Including Temperature Dependence for GaN-HEMT on Si;　2023/05
  ANNOUNCEMENT INFO.;　IEEE Transactions on Microwave Theory and Techniques, 71, 5, 1945 - 1956
  AUTHOR;　Yutaro Yamaguchi; Toshiyuki Oishi
  
• Fast Switching NO2-Doped p-Channel Diamond MOSFETs;　2023/05
  ANNOUNCEMENT INFO.;　
  AUTHOR;　N.C.Saha , T.Shiratsuchi, S.-W. Kim , K.Koyama , T.Oishi, and M.Kasu
  
• The improvement of Schottky barrier diodes fabricated only by B ion implantation doping accomplished by refinement of the electrode structure;　2023/04
  ANNOUNCEMENT INFO.;　, 62, 040902
  AUTHOR;　
  
• A simulation study of the impact of traps in the GaN substrate on the electrical characteristics of an AlGaN/GaN HEMT with a thin channel layer;　2021/12
  ANNOUNCEMENT INFO.;　Journal of Computational Electronics, 20 (2021) pp.2411-2455., 20, 2411-2455
  AUTHOR;　T. Oishi, K. Ito
  
• 345-MW/cm² 2608-V NO₂ p-Type Doped Diamond MOSFETs With an Al₂O₃ Passivation Overlayer on Heteroepitaxial Diamond;　2021/06
  ANNOUNCEMENT INFO.;　IEEE Electron Device Lett., 42, 903
  AUTHOR;　N. C. Saha, S.-W. Kim, T. Oishi, Y. Kawamata, K. Koyama, M. Kasu
  
• Fabrication of diamond modulation-doped FETs by NO2 delta doping in an Al2O3 gate layer;　2021/05
  ANNOUNCEMENT INFO.;　Applied Physics Express, 14, 051004
  AUTHOR;　M. Kasu, N. C. Saha, T. Oishi and S.-W. Kim
  
• Schottky barrier diodes fabricated on high-purity type-IIa CVD diamond substrates using an all-ion-implantation process;　2021/05
  ANNOUNCEMENT INFO.;　Jpn. J. Appl. Phys., 60, 050903
  AUTHOR;　S. Shigematsu, T. Oishi, Y. Seki, Y. Hoshino, J. Nakata and M. Kasu,
  
• Origin of reverse leakage current path in edge-defined film-fed growth (001) β-Ga2O3 Schottky barrier diodes observed by high-sensitive emission microscopy;　2020/07
  ANNOUNCEMENT INFO.;　Applied Physics Letters, 117, 022106
  AUTHOR;　Sayleap Sdoeung, Kohei Sasaki, Katsumi Kawasaki, Jun Hirabayashi, Akito Kuramata, Toshiyuki Oishi, and Makoto Kasu
  
• 145-MW/cm2 Heteroepitaxial Diamond MOSFETs With NO2 p-Type Doping and an Al2O3 Passivation Layer;　2020/05
  ANNOUNCEMENT INFO.;　IEEE Electron Device Lett, 41, 1066
  AUTHOR;　Niloy Chandra Saha ,Toshiyuki Oishi ,Seongwoo Kim,Yuki Kawamata,Koji Koyama,Makoto Kasu
  
• Stability of diamond/Si bonding interface during device fabrication process;　2019/01
  ANNOUNCEMENT INFO.;　Applied Physics Express, 12, 016501
  AUTHOR;　J.Liang, S.Masuya, S.Kim, T.Oishi, M.Kasu, and N.Shigekawa
  
• β-Ga2O3-based metal–oxide–semiconductor photodiodes with HfO2 as oxide;　2018/10
  ANNOUNCEMENT INFO.;　Applied Physics Express, 11, 112202
  AUTHOR;　T. Oshima, M. Hashikawa, S. Tomizawa, K. Miki, T. Oishi, K. Sasaki, and A. Kuramata,
  
• Electrical properties of Schottky barrier diodes fabricated on (001) β-Ga2O3 substrates with crystal defects,;　2017/06
  ANNOUNCEMENT INFO.;　Jpn. J. Appl. Phys., 56, 086501 (2017）., 56, 086501
  AUTHOR;　T. Oshima, A. Hashiguchi, T. Moribayashi, K. Koshi, K. Sasaki, A. Kuramata, O. Ueda, T. Oishi, and M. Kasu
  
• Carrier confinement observed at modulation-doped β-(AlxGa1-x)2O3/Ga2O3 heterojunction interface;　2017/02
  ANNOUNCEMENT INFO.;　Applied Physics Express 10 (2017) pp.035701, 10, 035701
  AUTHOR;　T. Oshima, Y. Kato, N. Kawano, A. Kuramata, S. Yamakoshi, S. Fujita, T. Oishi, and M. Kasu,
  
• Diamond Schottky Barrier Diodes With NO2 Exposed Surface and RF-DC Conversion Toward High Power Rectenna;　2017/01
  ANNOUNCEMENT INFO.;　IEEE Electron Device Lett., 38, 87-90
  AUTHOR;　T. Oishi, N. Kawano, S. Masuya, and M. Kasu
  
• Relationship between crystal defects and leakage current in β-Ga2O3 Schottky barrier diodes;　2016/11
  ANNOUNCEMENT INFO.;　Jpn. J. Appl. Phys., 55, 1202BB
  AUTHOR;　M. Kasu, K. Hanada, T. Moribayashi, A. Hashiguchi, T. Oshima, T. Oishi, K. Koshi, K. Sasaki, A. Kuramata, and O. Ueda
  
• Formation of indium–tin oxide ohmic contacts for β-Ga2O3;　2016/10
  ANNOUNCEMENT INFO.;　Jpn. J. Appl. Phys., 55, 1202B7
  AUTHOR;　T. Oshima, R. Wakabayashi, M. Hattori, A. Hashiguchi1, N. Kawano, K. Sasaki, T. Masui, A. Kuramata, S. Yamakoshi, K. Yoshimatsu, A. Ohtomo, T. Oishi, and M. Kasu
  
• 表面伝導型ダイヤモンドFETのデバイスシミレーションに関する検討;　2016/05
  ANNOUNCEMENT INFO.;　, J99-C, 5, pp.193-200
  AUTHOR;　
  
• Study on capacitance-voltage characteristics of diamond field-effect transistors with NO2 hole dopinb and Al2O3 gate insulator layer;　2016/02
  ANNOUNCEMENT INFO.;　Jpn. J. Appl. Phys., 55, 041301
  AUTHOR;　M.Kasu, K.Hirama, K. Harada, and T.Oishi
  
• Conduction mechanism in highly doped -Ga2O3 (-2 0 1) single crystals grown by edge-defined film-fed growth method and their Schottky barrier diodes;　2016/01
  ANNOUNCEMENT INFO.;　Jpn. J. Appl. Phys., 55, 030305 (2016）., 55, 030305
  AUTHOR;　T.Oishi, K.Harada, Y.Koga, and M.Kasu
  
• High-mobility -Ga2O3 (-2 0 1) single crystals grown by edge-defined film-fed growth method and their Schottky barrier diodes with Ni contact;　2015
  ANNOUNCEMENT INFO.;　Applied Physics Express, 8, 031101
  AUTHOR;　T.Oishi, Y.Koga, K.Harada, and M.Kasu
  
• Decrease in on-state gate current of AlGaN/GaN HEMTs by recombination-enhanced defect reaction of generated hot carriers investigated by TCAD simulation;　2014/10
  ANNOUNCEMENT INFO.;　Microelectronic Engineering, 54, 2662-2667
  AUTHOR;　H.Sasaki, K.Kadoiwa, H.Koyama, Y.Kamo, Y.Yamamoto, T.Oishi, K.Hayashi
  
• Decrease in on-state gate current of AlGaN/GaN HEMTs by recombination-enhanced defect reaction of generated hot carriers investigated by TCAD simulation;　2014
  ANNOUNCEMENT INFO.;　Microelectronic Engineering, 54, pp.2662-2667
  AUTHOR;　H.Sasaki, K.Kadoiwa, H.Koyama, Y.Kamo, Y.Yamamoto, T.Oishi, K.Hayashi
  
• Analysis of On-state Gate Current of AlGaN/GaN High Electron Mobility Transistor under Electrical and Temperature Stress;　2013
  ANNOUNCEMENT INFO.;　Jpn. J. Appl. Phys., 52（2013） 124101.
  AUTHOR;　K.Hayashi, H.Sasaki, and T.Oishi
  
• AlGaN/GaN HEMTにおけるドレインリーク電流の解析;　2013
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• Mechanism Study of Gate Leakage Current for AlGaN/GaN HEMT Structure Under High Reverse Bias by TSB Model and TCAD Simulation;　2013
  ANNOUNCEMENT INFO.;　Jpn. J. Appl. Phys., 52（2013） 04CF12.
  AUTHOR;　K.Hayashi, Y.Yamaguchi, T.Oishi, H.Otsuka, K.Yamanaka, M.Nakayama and Y.Miyamoto
  
• AlGaN channel HEMT with Extremely High Breakdown Voltage;　2013
  ANNOUNCEMENT INFO.;　IEEE Trans. Electron Devices, 60 (2013) pp.1046-1053.
  AUTHOR;　T.Nanjo , A.Imai , Y.Suzuki , Y.Abe , T.Oishi , M.Suita , E.Yagyu , Y.Tokuda
  
• Semi-physical nonlinear circuit model with device/physical parameters for HEMTs;　2011
  ANNOUNCEMENT INFO.;　International Journal of Microwave and Wireless Technologies 3 (2011) pp.25–33.
  AUTHOR;　H.Otsuka, T.Oishi, K.Yamanaka, M.Thorsell, K.Andersson, A.Inoue, Y.Hirano and I.Angelov
  
• Enhancement of Drain Current by an AlN Spacer Layer Insertion in AlGaN/GaN High-Electron-Mobility Transistors with Si-Ion-Implanted Source/Drain Contacts;　2011
  ANNOUNCEMENT INFO.;　Jpn. J. Appl. Phys. 50 (2011) 064101.
  AUTHOR;　T.Nanjo, T.Motoya, A.Imai, Y.Suzuki, K.Shiozawa, M.Suita, T.Oishi, Y.Abe, E.Yagyu, K.Yoshiara and Y.Tokuda
  
• Drivability Enhancement for AlGaN/GaN High-Electron Mobility Transistors with AlN Spacer Layer Using Si Ion Implantation Doping;　2009
  ANNOUNCEMENT INFO.;　Applied Physics Express 2 (2009) 031003.
  AUTHOR;　T.Nanjo, M.Suita, T.Oishi, Y.Abe, E.Yagyu, K.Yoshiara and Y.Tokuda
  
• AlGaN channel HEMTs on AlN buffer layer with sufficiently low off-state drain leakage current;　2009
  ANNOUNCEMENT INFO.;　Electron.Lett. 45 (2009) pp.1346-1347.
  AUTHOR;　T.Nanjo, M.Takeuchi, A.Imai, M.Suita, T.Oishi, Y.Abe, E.Yagyu, T.Kurata, Y.Tokuda and Y.Aoyagi
  
• Comparison of characteristics of AlGaN channel HEMTs formed on SiC and sapphire substrates;　2009
  ANNOUNCEMENT INFO.;　Electron. Lett. 45 (2009) pp.424-425.
  AUTHOR;　T.Nanjo, M.Suita, T.Oishi, Y.Abe, E.Yagyu, K.Yoshiara and Y.Tokuda
  
• Remarkable breakdown voltage enhancement in AlGaN channel high electron mobility transistors;　2008
  ANNOUNCEMENT INFO.;　Appl. Phys. Lett. 92 (2008) 263502.
  AUTHOR;　T.Nanjo, M.Takeuchi, M.Suita, T.Oishi, Y.Abe, Y.Tokuda and Y.Aoyagi
  
• First Operation of AlGaN Channel High Electron Mobility Transistors;　2008
  ANNOUNCEMENT INFO.;　Applied Physics Express 1 (2008) 011101.
  AUTHOR;　T.Nanjo, .Takeuchi, M.Suita, Y.Abe, T.Oishi, Y.Tokuda, and Y.Aoyagi
  
• Application of lightly doped drain structure to AlGaN/GaN HEMTs by ion implantation technique;　2008
  ANNOUNCEMENT INFO.;　Electron.Lett. 44 (2008) pp.1378-1379.
  AUTHOR;　M.Suita, T.Nanjo, T.Oishi, Y.Abe and Y.Tokuda
  
• X-ray Photoelectron Spectroscopy Study of the Origin of the Improved Device Performance by a Thin Al Layer Insertion between AlGaN and Schottky Gate on the AlGaN/GaN High-Electron-Mobility Transistor;　2007
  ANNOUNCEMENT INFO.;　Jpn. J. Appl. Phys. 46 (2007) pp.L584-L586.
  AUTHOR;　T.Nanjo, K.Kawase, M.Suita, Y.Abe, T.Oishi and Y.Tokuda
  
• Effects of a thin Al layer insertion between AlGaN and Schottky gate on the AlGaN/GaN high electron mobility transistor characteristics;　2006
  ANNOUNCEMENT INFO.;　Appl. Phys. Lett. 88 (2006) 043503.
  AUTHOR;　T.Nanjo, T.Oishi, M.Suita, Y.Abe and Y.Tokuda
  
• Ion implantation doping for AlGaN/GaN HEMTs;　2006
  ANNOUNCEMENT INFO.;　phys.stat.sol.(c) 3 (2006) pp.2364–2367.
  AUTHOR;　M.Suita, T.Nanjo, T.Oishi, Y.Abe and Yasunori Tokuda
  
• 結晶軸に沿ったZnイオン注入によるGaNの高抵抗化;　2004
  ANNOUNCEMENT INFO.;　J.Vac.Soc.Jpn. (真空) 47 (2004) pp.328-333.
  AUTHOR;　
  
• Thermal annealing effects on Ni/Au based Schottky contacts on n-GaN and AlGaN/GaN with insertion of high work function metal;　2004
  ANNOUNCEMENT INFO.;　Solid-State Electronics 48 (2004) pp.689–695.
  AUTHOR;　N.Miura, T.Nanjo, M.Suita, T.Oishi, Y.Abe, T.Ozeki, H.Ishikawa, T.Egawa, T.Jimbo
  
• Improvement of DC and RF Characteristics of AlGaN/GaN High Electron Mobility Transistors by Thermally Annealed Ni/Pt/Au Schottky Gate;　2004
  ANNOUNCEMENT INFO.;　Jpn. J. Appl. Phys. 43 (2004) pp.1925-1929.
  AUTHOR;　T.Nanjo, N.Miura, T.Oishi, M.Suita, Y.Abe, T.Ozeki, S.Nakatsuka, A.Inoue, T.Ishikawa, Y.Matsuda, H.Ishikawa and T.Egawa
  
• Effects of interfacial thin metal layer for high-performance Pt-Au-based Schottky contacts to AlGaN-GaN;　2004
  ANNOUNCEMENT INFO.;　IEEE Trans. Electron Devices 51 (2004) pp.297-303.
  AUTHOR;　N.Miura, T.Oishi, T.Nanjo, M.Suita, Y.Abe, T.Ozeki, H.Ishikawa, and T.Egawa
  
• Highly resistive GaN layers formed by ion implantation of Zn along the c axis;　2003
  ANNOUNCEMENT INFO.;　J. Appl. Phys. 94 (2003) pp.1662-1666.
  AUTHOR;　T.Oishi, N.Miura, M.Suita, T.Nanjo, Y.Abe and T.Ozeki
  
• Junction capacitance reduction due to self-aligned pocket implantation in elevated source/drain NMOSFETs;　2001
  ANNOUNCEMENT INFO.;　IEEE Trans. Electron Devices 48 (2001) pp.1969-1974.
  AUTHOR;　N.Miura, Y.Abe, K.Sughihar, T.Oishi, T.Furukawa, T.Nakahata, K.Shiozawa, S.Maruno, Y.Tokuda
  
• Short channel characteristics of quasi-single-drain MOSFETs;　2001
  ANNOUNCEMENT INFO.;　IEEE Electron Device Lett., 22 (2001) pp.351-353.
  AUTHOR;　K.Sugihara, Y.Abe, T.Oishi, N.Miura, Y.Tokuda
  
• A dual-gate complementary metal-oxide-semiconductor technology with novel self-aligned poket implantation which takes advantage of elevated source/drain configurations;　2001
  ANNOUNCEMENT INFO.;　Jpn. J. Appl. Phys. 40 (2001) pp.2611-2615.
  AUTHOR;　K.Sugihara, N.Miura, T.Furukawa, T.Nakahata, T.Oishi, S.Maruno, Y.Abe and Y.Tokuda
  
• Remarkable effects of introduction of SiON materials into shallow trench isolation fabrication process on metal-oxide-semiconductor field-effect transistors;　2001
  ANNOUNCEMENT INFO.;　Jpn. J. Appl. Phys. 40 (2001) pp.462-466.
  AUTHOR;　K.Shiozawa, T.Oishi, Y.Abe and Y.Tokuda
  
• Expansion of effective channel width for MOSFETs defined by novel T-shaped shallow trench isolation fabricated with SiON spacers and liners;　2000
  ANNOUNCEMENT INFO.;　Electron. Lett. 36 (2000) pp.910-912.
  AUTHOR;　K.Shiozawa, T.Oishi, Y.Abe, Y.Tokuda
  
• Isolation Edge Effect Depending on Gate Length of MOSFET's with Various Isolation Structures;　2000
  ANNOUNCEMENT INFO.;　IEEE Trans. on Electron Devices 47 (2000) pp.822-827.
  AUTHOR;　T.Oishi, K.Shiozawa, A.Furukawa, Y.Abe and Y.Tokuda
  
• Simulation Study on Comparison Between Metal Gate and Polysilicon Gate for Sub-Quarter-Micron MOSFET’s;　1999
  ANNOUNCEMENT INFO.;　IEEE Electron Device Lett. 20 (1999) pp.632-634.
  AUTHOR;　Y.Abe, T.Oishi, K.Shiozawa, Y.Tokuda and S.Satoh
  
• Experimental study on isolation edge effects in short channel characteristics of metal oxide semiconductor field effect transistors (MOSFETs);　1999
  ANNOUNCEMENT INFO.;　Microelectronic Engineering 45 (1999) pp.369-375.
  AUTHOR;　T.Oishi, K.Shiozawa, A.Furukawa, Y.Abe, Y.Tokuda and S.Satoh
  
• Advantage of shallow trench isolation over local oxidation of silicon on alignment tolerance;　1999
  ANNOUNCEMENT INFO.;　Jpn. J. Appl. Phys. 38 (1999) pp.L234-L235.
  AUTHOR;　K.Shiozawa, T.Oishi, K.Sugihara, A.Furukawa, Y.Abe and Y.Tokuda
  
• Gate overlap length reduction and shallow junction formation in high-performance fine MOSFETs by ion implantation through thin oxide film;　1998
  ANNOUNCEMENT INFO.;　Electron. Lett. 34 (1998) pp.2436-2438.
  AUTHOR;　T.Oishi, A.Furukawa, K.Shiozawa, Y.Abe and Y.Tokuda
  
• Anomalous gate length dependence of threshold voltage of trench-isolated metal oxide semiconductor field effect transistors;　1998
  ANNOUNCEMENT INFO.;　Jpn. J. Appl. Phys. 37 (1998) pp.L852-L854.
  AUTHOR;　T.Oishi, K.Shiozawa, A.Furukawa, Y.Abe and Y.Tokuda
  
• Protection of field oxide in trench isolation against contact hole etching to improve alignment tolerance;　1998
  ANNOUNCEMENT INFO.;　Jpn. J. Appl. Phys. 37 (1998) pp.L833-L835.
  AUTHOR;　T.Oishi, K.Shiozawa, K.Sugihara, Y.Abe and Y.Tokuda
  
• Excellent electrical characteristics of ultrafine trench isolation;　1998
  ANNOUNCEMENT INFO.;　J. Electrochem. Soc. 145 (1998) pp.1684-1687.
  AUTHOR;　K.Shiozawa, T.Oishi, H.Maeda, T.Murakami, K.Yasumura, Y.Abe and Y.Tokuda
  
• Narrow-channel metal oxide semiconductor field effect transistor (MOSFET) isolated by an ultra-fine trench;　1997
  ANNOUNCEMENT INFO.;　Jpn. J. Appl. Phys. 36 (1997) pp.L547-L549.
  AUTHOR;　T.Oishi, K.Shiozawa, A.Furukawa, Y.Abe and Y.Tokuda
  
• Electrical characteristics of ultra-fine trench isolation fabricated by a new two-step filling process;　1996
  ANNOUNCEMENT INFO.;　Jpn. J. Appl. Phys. 35 (1996) pp.L1625-L1627.
  AUTHOR;　K.Shiozawa, T.Oishi, H.Maeda, T.Murakami, K.Yasumura, Y.Abe and Y.Tokuda
  
• In-plane orientation and coincidence site lattice relation of Bi2Sr2CaCu2Ox thin films formed on highly mismatched (001) YAG substrates;　1994
  ANNOUNCEMENT INFO.;　Jpn. J. Appl. Phys. 33 (1994) pp.929-931.
  AUTHOR;　M.Kataoka, K.Kuroda, T.Oishi, T.Takami, A.Furukawa, J.Tanimura, T.Ogama and K.Kojima
  
• Reactive ion etching of BiSrCaCuO superconducting thin films using ethane and oxygen;　1994
  ANNOUNCEMENT INFO.;　Jpn. J. Appl. Phys. 33 (1994) pp.L315-L317.
  AUTHOR;　T.Oishi, T.Takami, K.Kuroda, K.Kojima, O.Wada, and M.Nunoshita
  
• Effect of ethane addition to argon in etching of BiSrCaCuO superconducting thin films;　1993
  ANNOUNCEMENT INFO.;　Jpn. J. Appl. Phys. 32 (1993) pp.L187-L189.
  AUTHOR;　T.Oishi, T.Takami, K.Kojima, K.Kuroda and O.Wada
  
• Fabrication of submicron gratings for 1.5μm InGaAsP/InP distributed feedback lasers by reactive ion etching using C2H6/H2;　1992
  ANNOUNCEMENT INFO.;　J. Electrochem. Soc. 139 (1992) pp.2969-2974.
  AUTHOR;　H.Sugimoto, Y.Abe, T.Ohishi, K.Ohtsuka, T.Matsui, H.Yoshiyasu and Y.Nomura
  
• Fe and Al concentrations in high resistivity InP layer grown by low-temperature liquid phase epitaxy;　1991
  ANNOUNCEMENT INFO.;　Jpn. J. Appl. Phys.30 (1991) pp.218-220.
  AUTHOR;　K.Ohtsuka, T.Ohishi, Y.Abe, H.Sugimoto, H.Yoshiyasu, H.Kuroki and K.Kuramoto
  
• Photoluminescence characterization of InP surface reactive ion etched by a gas mixture of ethane and hydrogen;　1991
  ANNOUNCEMENT INFO.;　J. Appl. Phys. 70 (1991) pp.2361-2365.
  AUTHOR;　K.Ohtsuka, T.Ohishi, Y.Abe, H.Sugimoto and T.Matsui
  
• 1.5μm InGaAsP/InP buried-heterostructure laser diode fabricated by reactive ion etching using a mixture of ethane and hydrogen;　1990
  ANNOUNCEMENT INFO.;　Appl. Phys. Lett. 56 (1990) pp.1641-1642.
  AUTHOR;　T.Matsui, K.Ohtsuka, H.Sugimoto, Y.Abe and T.Ohishi
  
• Open-tube Zn diffusion method for InGaAsP/InP heterojunction bipolar transistors;　1990
  ANNOUNCEMENT INFO.;　Jpn.　J.　Appl.　Phys. 29 (1990) pp.L213-L216.
  AUTHOR;　T.Ohishi, K.Ohtsuka, Y.Abe, H.Sugimoto and T.Matsui
  
• Ultra-high current gain InGaAsP/InP heterojunction bipolar transistor;　1990
  ANNOUNCEMENT INFO.;　Electron. Lett. 26 (1990) pp.392-393.
  AUTHOR;　T.Ohishi, Y.Abe, H.Sugimoto, K.Ohtsuka and T.Matsui
  
• High resistivity InP layer grown by low temperature liquid phase epitaxy;　1990
  ANNOUNCEMENT INFO.;　J. Crystal Growth 106 (1990) pp.467-470.
  AUTHOR;　K.Ohtsuka, T.Ohishi, Y.Abe, H.Sugimoto and T.Matsui
  
• C2H6/H2混合ガスを使用したIII-V族化合物半導体の反応性イオンエッチング;　1989
  ANNOUNCEMENT INFO.;　J.Vac.Soc.Jpn. (真空) 32 (1989) pp.801-807.
  AUTHOR;　
  
• High-speed 1.55μm GaInAsP/InP mass transport laser diode on semi-insulating substrate;　1989
  ANNOUNCEMENT INFO.;　Electron. Lett. 25 (1989) pp.1505-1506.
  AUTHOR;　Y.Abe, T.Ohishi, H.Sugimoto, T.Matsui and H.Ogata
  
• 1.5μm side-hilled BH InGaAsP/InP laser with waveguide for wavelength tuning;　1989
  ANNOUNCEMENT INFO.;　OPTOELECTRONICS-Devices and Technologies 4 (1989) pp.97-104.
  AUTHOR;　Y.Abe, K.Ohtsuka, H.Sugimoto, T.Ohishi and T.Matsui
  
• GaInAsP/InP lasers with etched mirrors by reactive ion etching using a mixture of ethane and hydrogen;　1989
  ANNOUNCEMENT INFO.;　Appl.Phys.Lett.54 (1989) pp.1193-1194.
  AUTHOR;　T.Matsui, H.Sugimoto, T.Ohishi, Y.Abe, K.Ohtsuka and H.Ogata
  
• GaInAsP/InP heterojunction bipolar transistors with a double layer base;　1989
  ANNOUNCEMENT INFO.;　Electron. Lett. 25 (1989) pp.41-42.
  AUTHOR;　T.Ohishi, K.Ohtsuka, T.Matsui and H.Ogata
  
• Reactive ion etching of III-V compounds using C2H6/H2;　1988
  ANNOUNCEMENT INFO.;　Electron. Lett. 24 (1988) pp.798-800.
  AUTHOR;　T.Matsui, H.Sugimoto, T.Ohishi and H.Ogata
  
• High-purity In0.53Ga0.47As layer grown by liquid phase epitaxy;　1988
  ANNOUNCEMENT INFO.;　J. Crystal Growth 89 (1988) pp.391-394.
  AUTHOR;　K.Ohtsuka, T.Ohishi, Y.Abe, H.Sugimoto, T.Matsui and H.Ogata
  
• Electrical properties of silicon nitride films plasma-deposited from SiF4, N2, and H2 source gases;　1985
  ANNOUNCEMENT INFO.;　J. Appl. Phys. 57 (1985) pp.426-431.
  AUTHOR;　Sz.Fujita, T.Ohishi, H.Toyoshima, A.Sasaki
  
• Plasma-deposited silicon nitride films from SiF2 as silicon source;　1984
  ANNOUNCEMENT INFO.;　Jpn.　J.　Appl.　Phys. 23 (1984) pp.L268-L270.
  AUTHOR;　Sz.Fujita, H.Toyoshima, T.Ohishi, A.Sasaki
  
• Plasma-enhanced chemical vapor deposition of fluorinated silicon nitride;　1984
  ANNOUNCEMENT INFO.;　Jpn.　J.　Appl.　Phys. 23 (1984) pp.L144-L146.
  AUTHOR;　Sz.Fujita, H.Toyoshima, T.Ohishi, A.Sasaki
  

Material, Commentary, Editorials, Research Report, A Comprehensive Journal Articles

• 研究室紹介　　「ワイドバンドギャップ半導体を用いた高周波電子デバイスの高性能化を目指して」;　2017/07
  ANNOUNCEMENT INFO.;　, 166
  AUTHOR;　
  
• GaN HEMTの半物理的非線形回路モデル;　2011
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• AlGaNチャネルによるトランジスタの高耐圧化;　2008
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• 注入ドーピングによるGaNトランジスタの高性能化;　2005
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  

General Lectures

• GaN HEMTのGaNトラップのY22/Y21信号と過渡応答特性比較 -マルチバイアスでの比較-;　2024/03
  ANNOUNCEMENT INFO.;　, C-10-8
  AUTHOR;　
  
• ダイヤモンドNO2 p 型ドープMOSFET の長時間(100h)AC ストレス測定;　2023/09
  ANNOUNCEMENT INFO.;　, 23p-B201-4
  AUTHOR;　
  
• GaN HEMT のDC パラメータがトラップ特性（低周波Y22）に与える影響（デバイスシミュレーションによる検討）;　2023/09
  ANNOUNCEMENT INFO.;　, 22a-B201-6
  AUTHOR;　
  
• GaN HEMT に対する低周波Y21 とY22 信号のドレイン電圧依存性;　2023/09
  ANNOUNCEMENT INFO.;　, 22a-B201-7
  AUTHOR;　
  
• GaN HEMT 中のトラップ位置と低周波Y21/Y22 虚部の関係（デバイスシミュレーションによる検討）;　2023/09
  ANNOUNCEMENT INFO.;　, 22a-B201-8
  AUTHOR;　
  
• S パラメータの周波数依存性を用いたトランジスタ動作時におけるGaN HEMT のトラップとRF 特性の同時評価;　2023/09
  ANNOUNCEMENT INFO.;　, 22a-B201-9
  AUTHOR;　
  
• ノーマリオフ型EID AlGaN/GaN MOS-HEMT における膜中残留応力が電気的特性に与える影響のTCAD による検討;　2023/09
  ANNOUNCEMENT INFO.;　, 22p-B201-9
  AUTHOR;　
  
• GaN HEMTのGaNトラップが低周波Y22パラメータに与える影響の検討－デバイスシミュレーション－;　2023/01
  ANNOUNCEMENT INFO.;　, pp.29-32
  AUTHOR;　
  
• 低周波Y パラメータを用いたGaN HEMT トラップ評価における表面処理と光照射の効果に関する研究;　2022/11
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• GaN HEMT のGaN トラップ位置が低周波Y パラメータに与える影響（デバイスシミュレーションによる検討）;　2022/11
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• 低周波 22 パラメータ測定によるGaN HEMT中のFeトラップ評価;　2022/11
  ANNOUNCEMENT INFO.;　, 49
  AUTHOR;　
  
• Characterization of Fe-doping Induced Trap in AlGaN/GaN HEMTs using Low Frequency Y22 Measurement;　2022/09
  ANNOUNCEMENT INFO.;　14th Topical workshop on heterostructure microelectronics (TWHM 2022), Aug. 29th- Sept. 1sh, 2022, Hiroshima, 8-3
  AUTHOR;　T. Nishida, T. Oishi, T. Otsuka, Y. Yamaguchi, M. Tsuru, K. Yamanaka
  
• Bイオン注入のみで作製したダイヤモンドショットキーバリアダイオード;　2022/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• 3659 V, 0.37 A /mm 微傾斜ダイヤモンド上に作製した NO2ドープ ダイヤモンド MOSFET;　2022/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• 過渡応答測定を用いたGaN HEMTトラップ時定数のドレイン電圧依存性の検討;　2022/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• 移動度パラメータがGaN HEMTの低周波Y22特性に与える影響（デバイスシミュレーションによる検討）;　2022/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• 低ドレイン電流時のY22によるGaN HEMTのトラップ解析;　2022/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• Mechanisms of Buffer and Surface Traps in GaN HEMTs for Low Frequency Y21 and Y22 parameters;　2022/04
  ANNOUNCEMENT INFO.;　The European Microwave Conference (EuMC) 2021, 2nd – 7th April 2022, London, UK (Video Letter)
  AUTHOR;　T. Otsuka, Y. Yamaguchi, M. Tsuru, and T. Oishi
  
• GaN HENTの低周波Yパラメータ特性におけるバッファトラップと表 面トラップの異なる特性に対するメカニズム解析;　2022/03
  ANNOUNCEMENT INFO.;　, 2021年3月16日, C-10-2
  AUTHOR;　
  
• トラップの影響を考慮した Ka 帯 GaN コンパクトモデルの変調特性の精度改善;　2022/03
  ANNOUNCEMENT INFO.;　, 2021年3月16日, C-2-8
  AUTHOR;　
  
• GaN HEMTのGaN層中トラップと自己発熱効果が低周波Y22へ与える影響(デバイスシミュレーションによる検討);　2021/12
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• GaN HEMTの飽和領域における低周波Y21の温度特性を用いたトラップ評価;　2021/12
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• ゲート電流を注入したGaN　HEMTにおける回路パラメータの周波数依存性に関する研究;　2021/12
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• 選択ドーピングしたダイヤモンド電界効果トランジスタ;　2021/09
  ANNOUNCEMENT INFO.;　, 12p-N305-9
  AUTHOR;　
  
• 全てイオン注入法でドーピングし作製したダイヤモンドショットキーバリアダイオード;　2021/09
  ANNOUNCEMENT INFO.;　, 12p-S301-8
  AUTHOR;　
  
• GaN HEMTの低周波Yパラメータ特性における表面トラップの影響に対するTCAD解析;　2021/03
  ANNOUNCEMENT INFO.;　, C-10-2
  AUTHOR;　
  
• GaN HEMTにおけるバッファトラップからの低周波Yパラメータを再現するトラップ回路の検討;　2020/09
  ANNOUNCEMENT INFO.;　, 06-2A-08
  AUTHOR;　
  
• 超高感度エミッション顕微鏡によるEFG成長β型酸化ガリウムショットキーバリアダイオードの漏れ電流の起源の同定;　2020/09
  ANNOUNCEMENT INFO.;　, 9p-Z20-11
  AUTHOR;　
  
• Study on Effects of GaN Trap Depth Profiles to Transient Response in GaN HEMTs on GaN Substrates by Device Simulation;　2020/09
  ANNOUNCEMENT INFO.;　2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT2020), September 2-4, 2020, Hiroshima, Japan.
  AUTHOR;　K.Ito and T.Oishi
  
• Study on Self-heating and Drain Voltage Effects for Buffer Traps in GaN HEMTs by Low Frequency S-parameter Measurements;　2020/09
  ANNOUNCEMENT INFO.;　2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT2020), September 2-4, 2020, Hiroshima, Japan.
  AUTHOR;　M.Tabuchi, T.Otsuka, Y.Yamaguchi, S.Shinjo and T.Oishi
  
• GaN HEMTの自己発熱の低周波Sパラメータへの影響に関する解析;　2020/03
  ANNOUNCEMENT INFO.;　, C-10-3
  AUTHOR;　
  
• カスコード接続を用いたシングルシャント整流回路のRF-DC変換効率におけるゲート幅依存性の検討;　2019/11
  ANNOUNCEMENT INFO.;　2019年度応用物理学会九州支部学術講演会，熊本大学工学部 黒髪南地区, 熊本（2019年11月24日） 24Dp-9
  AUTHOR;　
  
• 低周波ネットワークアナライザによるGaN HEMTソース，ゲート間のトラップ評価;　2019/11
  ANNOUNCEMENT INFO.;　2019年度応用物理学会九州支部学術講演会，熊本大学工学部 黒髪南地区, 熊本（2019年11月24日） 24Dp-8.
  AUTHOR;　
  
• サブミクロンゲ－トダイヤモンドMOSFETの電気的特性評価;　2019/11
  ANNOUNCEMENT INFO.;　2019年度応用物理学会九州支部学術講演会，熊本大学工学部 黒髪南地区, 熊本（2019年11月23日） 23Bp-10.
  AUTHOR;　
  
• Ga2O3ショットキーバリアダイオードを用いたマイクロ波-DC変換動作の実証と負荷抵抗依存性;　2019/11
  ANNOUNCEMENT INFO.;　
  AUTHOR;　橋川　誠, 浦田幸佑, 竹ノ畑拓海, 網代康佑, 大島孝仁, 大石敏之
  
• 大電力レクテナ用スーパーワイドバンドギャップ半導体デバイスの研究開発の状況;　2019/11
  ANNOUNCEMENT INFO.;　IEEE AP-S Fukuoka Chapter 特別講演、電子情報通信学会研究会　2019-11-AP-RCS, 2019年11月20日, 佐賀大学
  AUTHOR;　大石敏之
  
• Study of Self-heating Effect of GaN HEMTs with Buffer Traps by Low Frequency S-parameters Measurements and TCAD Simulation;　2019/11
  ANNOUNCEMENT INFO.;　IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), November 3-6, 2019, Nashville, Tennessee, USA, 3b.2.
  AUTHOR;　T. Otsuka,Y. Yamaguchi, S. Shinjo, and Toshiyuki Oishi
  
• RF measurements and analysis for submicron-gate diamond MOSFETs fabricated on heteroepitaxial diamonds;　2019/09
  ANNOUNCEMENT INFO.;　30th International Conference on Diamond and Carbon Materials(ICDCM2019), 8-12 September, 2019, Melia Lebreros, Seville, Spain, 06A.1.
  AUTHOR;　M. Kasu, T. Kamogawa, N.C. Saha, T. Oishi, and S.W. Kim
  
• IM3のアンバランスに関するトラップの影響を考慮したGaN大信号モデルの精度向上;　2019/03
  ANNOUNCEMENT INFO.;　2019年電子情報通信学会総合大会，早稲田大学　西早稲田キャンパス（東京）, 東京（2019年3月19–22日）C-2-29.
  AUTHOR;　
  
• TCADを用いたGaN HEMTの低周波Sパラメータバイアス依存性に対する自己発熱の影響に関する検討;　2019/03
  ANNOUNCEMENT INFO.;　2019年電子情報通信学会総合大会，早稲田大学　西早稲田キャンパス（東京）, 東京（2019年3月19–22日）C-10-2.
  AUTHOR;　大塚　友絢、山口 裕太郎、新庄　真太郎、大石　敏之
  
• ヘテロエピタキシャルダイヤモンド上サブミクロンゲートMOSFETの高周波数特性;　2019/03
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• デバイスシミュレーションによるGaN HEMTのバッファトラップが過渡応答 とドレインリークに与える影響の検討;　2019/03
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• 大電力RF-DC変換に向けたGaN HEMT/Siダイオードのカスコード接続回路の検討;　2019/01
  ANNOUNCEMENT INFO.;　, 75
  AUTHOR;　
  
• Response for sine wave input to Ga2O3 SBDs;　2018/12
  ANNOUNCEMENT INFO.;　JSAP Kyushu Chapter Annual Meeting 2018 8 Dec 2018 9Ba-3.
  AUTHOR;　N.Fukami, T.Oshima, T.Oishi
  
• Calculation of RF-DC conversion efficiency using diamond diodes by circuit simulation;　2018/12
  ANNOUNCEMENT INFO.;　JSAP Kyushu Chapter Annual Meeting 2018 9 Dec 2018 9Ba-1.
  AUTHOR;　K. Ajiro, K. Urata, T. Oishi, M. Kasu
  
• Effect of transient response and frequency response on buffer traps in GaN HEMTs;　2018/12
  ANNOUNCEMENT INFO.;　JSAP Kyushu Chapter Annual Meeting 2018 9 Dec 2018 9Ba-10.
  AUTHOR;　Y.Ishimatsu, T.Otsuka, T.Oishi, Y.Yamaguchi, S.Shinjo
  
• Study on influence of damage area on electrical aharacteristics of diamond MOSFET;　2018/12
  ANNOUNCEMENT INFO.;　JSAP Kyushu Chapter Annual Meeting 2018 9 Dec 2018 9Ba-2.
  AUTHOR;　T.Kamogawa, T.Oishi, M.Kasu
  
• RF-DC conversion using single-shunt rectifying circuit with cascode configuration composed of GaN HEMT and Si SBD;　2018/12
  ANNOUNCEMENT INFO.;　JSAP Kyushu Chapter Annual Meeting 2018 9 Dec 2018 9Ba-1.
  AUTHOR;　K.Urata, K.Ajiro, T.Oishi, Y.Yamaguchi, T.Otsuka,S.Shinjo
  
• β-Ga2O3 MOSフォトダイオードの高電界印加動作;　2018/11
  ANNOUNCEMENT INFO.;　第一回結晶工学×ISYSE 合同研究会, 2018年11月29日.
  AUTHOR;　橋川 誠, 後藤 隆介, 富澤 三世, 三木 風帆、佐々木 公平, 倉又 朗人, 大石 敏之, 大島 孝仁
  
• Ka-band GaN Large-Signal Model Considering Trap Effect on Non-linear Capacitance by Using Transient S-parameters Measurement;　2018/10
  ANNOUNCEMENT INFO.;　IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), October 14-17, 2018, California, USA
  AUTHOR;　Yutaro Yamaguchi, Masatake Hangai, Shintaro Shinjo, Koji Yamanaka, and Toshiyuki Oishi
  
• DCストレス後のダイヤモンドMOS FET特性のデバイスシミュレーションによる解析;　2018/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• β-Ga2O3 MOSフォトダイオードの内部電界評価;　2018/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• Diamond field-effect transistors fabricated on highquality heteroepitaxial diamond wafers treated by chemical mechanical polishing technology;　2018/09
  ANNOUNCEMENT INFO.;　29th International Conference on Diamond and Carbon Materials(ICDCM2018), 2-6 September, 2018, Valamar Lacroma Dubrovnik, Dubrovnik, Croatia, O6A.4., O6A.4
  AUTHOR;　M. Kasu, D. Fujii, S. Masuya, T.Oishi, S. Kim
  
• Sパラメータ過渡応答測定を用いてトラップの非線形容量への影響を考慮したKa帯GaN大信号モデル;　2018/07
  ANNOUNCEMENT INFO.;　, 125
  AUTHOR;　
  
• Fabrication of Diamond Field-Effect Transistors on High-Quality Heteroepitaxial Diamond Wafer Using Microneedle Technology;　2018/05
  ANNOUNCEMENT INFO.;　12th International New Diamond and Nano Carbons Conference(NDNC2018), B4.03
  AUTHOR;　Makoto Kasu, Naru Fukami, Yuma Ishimatsu, Satoshi Masuya, Toshiyuki Oishi, Daiki Fujii and Seongwoo Kim
  
• トラップの時定数がGaN HEMTのパルス応答に与える影響 －デバイスシミュレーションによる検討－;　2018/03
  ANNOUNCEMENT INFO.;　, 早稲田大学西早稲田キャンパス，東京（2018年3月17–20日）19p-C302-15.
  AUTHOR;　網代 康佑、大石 敏之
  
• 高い電圧変換比を持つダイヤモンドショットキーバリアダイオードRF-DC変換回路;　2018/03
  ANNOUNCEMENT INFO.;　, 早稲田大学西早稲田キャンパス，東京（2018年3月17–20日）18p-C302-11.
  AUTHOR;　深見 成、網代 康佑、大石 敏之、河野 直士、荒木 幸二、桝谷 聡士、嘉数 誠
  
• マイクロニードル技術を用いた高品質ヘテロエピタキシャル膜上に作製したダイヤモンドFET;　2018/03
  ANNOUNCEMENT INFO.;　, 早稲田大学西早稲田キャンパス，東京（2018年3月17–20日）18p-C302-9.
  AUTHOR;　嘉数 誠、深見 成、石松 裕真、桝谷 聡士、大石 敏之、藤居 大樹、金 聖佑
  
• Diamond field-effect transistors fabricated on high-quality heteroepitaxial diamond wafer using microneedle technology;　2018/03
  ANNOUNCEMENT INFO.;　Hasselt Diamond Workshop 2018(SBDD XXIII), 12.4
  AUTHOR;　M. Kasu, N. Fukami, Y. Ishimatsu, S. Masuya, T. Oishi, D. Fujii, S.W. Kim
  
• NO2ホールドピング 水素終端ダイヤモンドMOS FETのDCストレス評価;　2017/12
  ANNOUNCEMENT INFO.;　, ED2017-63, 769-72
  AUTHOR;　
  
• NO2ホールドーピング水素終端ダイヤモンドMOS FETのDCストレスによる劣化メカニズムの検討;　2017/09
  ANNOUNCEMENT INFO.;　, 福岡国際会議場，福岡県（2017年9月5–8日）8a-S22-8.
  AUTHOR;　舟木 浩祐，石松 裕真，桝谷 聡士，宮崎 恭輔，大島 孝仁，嘉数 誠，大石 敏之
  
• GaN HEMTのゲート形状とゲート金属残留応力がゲートリーク電流に与える影響のデバイスシミュレーションによる検討;　2017/09
  ANNOUNCEMENT INFO.;　, 福岡国際会議場，福岡県（2017年9月5–8日）7p-S22-13.
  AUTHOR;　大石 敏之，山口 裕太郎，山中 宏治
  
• 低暗電流酸化ガリウムMIS光検出素子;　2017/09
  ANNOUNCEMENT INFO.;　, 福岡国際会議場，福岡県（2017年9月5–8日）7p-C17-14.
  AUTHOR;　大島 孝仁，橋川 誠，富澤 三世，佐々木 公平，倉又 朗人，大石 敏之，嘉数 誠
  
• 非線形容量におけるトラップの影響を考慮したKa 帯大信号GaN モデル;　2017/09
  ANNOUNCEMENT INFO.;　, 2017年9月14日, 東京都市大学，C-2-19.
  AUTHOR;　
  
• Electrical properties of Schottky diodes fabricated on a (001) β-Ga2O3 single crystal substrate having line-shaped voids and small defects;　2017/09
  ANNOUNCEMENT INFO.;　2nd International Workshop on Ga2O3 and Related Materials (IWGO 2017), P22
  AUTHOR;　T. Oshima,A. Hashiguchi, T. Moribayashi, K. Koshi, K. Sasaki, A. Kuramata, O. Ueda, T. Oishi, and M. Kasu
  
• Ka 帯GaNHEMT の分布型大信号モデル;　2017/03
  ANNOUNCEMENT INFO.;　, 名城大学, 2016年3月22日, C-2-14
  AUTHOR;　
  
• ゲート金属残留応力がGaN HEMTの電気的特性に与え る影響 － TCADシミュレーションによる検討 －;　2017/03
  ANNOUNCEMENT INFO.;　, パシフィコ横浜, 2017年3月16日, 16a-P4-29
  AUTHOR;　
  
• β-(AlxGa1-x)2O3ヘテロ接合界面におけるキャリア閉じ込めの観察;　2017/03
  ANNOUNCEMENT INFO.;　, パシフィコ横浜, 2017年3月14日, 14a-502-6
  AUTHOR;　
  
• (-201)β-Ga2O3ショットキーバリアダイオードのリーク電流と結晶欠陥との関係;　2017/03
  ANNOUNCEMENT INFO.;　, パシフィコ横浜, 2017年3月14日, 14p-502-4
  AUTHOR;　
  
• (001)β-Ga2O3ショットキーバリアダイオードのリーク電流と結晶欠陥との関係;　2017/03
  ANNOUNCEMENT INFO.;　, パシフィコ横浜, 2017年3月14日, 14p-502-5
  AUTHOR;　
  
• ダブルNO2ホールドーピングした水素終端ダイヤモンドMOSFETの連続動作;　2017/03
  ANNOUNCEMENT INFO.;　, パシフィコ横浜, 2017年3月15日, 15p-315-16
  AUTHOR;　
  
• ダイヤモンド素子を用いたレクテナ回路の高電圧動作;　2017/03
  ANNOUNCEMENT INFO.;　, パシフィコ横浜, 2017年3月14–17日, 15p-315-17
  AUTHOR;　
  
• AlGaN/GaN HEMTの電気的特性に対する保護膜残留応力依存性 －TCADシミュレーションによる検討－;　2017/01
  ANNOUNCEMENT INFO.;　, ED2016-108, 2017年1月27日, 63-68
  AUTHOR;　
  
• GaN HEMTの低周波等価回路パラメータへのバッファトラップの影響;　2016/11
  ANNOUNCEMENT INFO.;　, MW2016-128, 2016年11月17日, 69-72
  AUTHOR;　
  
• ダイヤモンド素子を用いたレクテナの理論的検討と動作実証;　2016/10
  ANNOUNCEMENT INFO.;　, 平戸文化センター, 2016年10月25日, 25am2-PM-015
  AUTHOR;　
  
• Physical Model of RF Leakage in GaN HEMTs on Si Substrates Based on Atomic Diffusion Analysis at Buffer/Substrate Interface;　2016/10
  ANNOUNCEMENT INFO.;　38th IEEE COMPOUND SEMICONDUCTOR IC (CSIC) SYMPOSIUM, Oct. 23-26, 2016, Austin, Texas, L.1.
  AUTHOR;　Y. Yamaguchi, J. Kamioka, S. Shinjo, K. Yamanaka and T. Oishi
  
• 小信号特性の周波数依存性を利用したGaNショットキーバリアダイオードのパラメータ抽出;　2016/09
  ANNOUNCEMENT INFO.;　, 宮崎大学, 2016年9月29日, 05-1A-09
  AUTHOR;　
  
• β-Ga2O3ショットキーバリアダイオードのリーク電流と結晶欠陥との関係;　2016/09
  ANNOUNCEMENT INFO.;　, 2016年9月15日, 朱鷺メッセ, 16a-A22-2
  AUTHOR;　
  
• β-Ga2O3用ITOオーミック電極;　2016/09
  ANNOUNCEMENT INFO.;　, 2016年9月15日, 朱鷺メッセ, 14p-P10-24
  AUTHOR;　
  
• レクテナにおけるダイヤモンドショットキーバリアダイオードの抵抗容量積の影響;　2016/09
  ANNOUNCEMENT INFO.;　, 2016年9月15日, 朱鷺メッセ, 15a-B1-6
  AUTHOR;　
  
• 酸化ガリウムダイオードを用いたレクテナ回路動作;　2016/09
  ANNOUNCEMENT INFO.;　, 2016年9月15日, 朱鷺メッセ, 15a-B1-5
  AUTHOR;　
  
• ダイヤモンドデバイスを用いた無線電力伝送用レクテナの理論的検討;　2016/09
  ANNOUNCEMENT INFO.;　, 2016年9月15日, 朱鷺メッセ, 15a-B1-4
  AUTHOR;　
  
• Fabrication of diamond field-effect transistorswith double NO2 hole doping and low-temperature Al2O3 gate insulator layer;　2016/09
  ANNOUNCEMENT INFO.;　International Conference on Diamond and Carbon Materials, Sept. 4-8, 2016, Le Corum, Montpellier, France, P13.19.
  AUTHOR;　M. Kasu, K. Hanada, Y. Koga, T. Oshima, T. Oishi
  
• Fabrication of diamond rectenna devices for wireless power transmission;　2016/09
  ANNOUNCEMENT INFO.;　International Conference on Diamond and Carbon Materials, Sept. 4-8, 2016, Le Corum, Montpellier, France, O17.5
  AUTHOR;　M. Kasu, T. Oishi, N. Kawano, A. Miyachi, S. Kawasaki
  
• Demonstration of RF-DC conversion using dual diode rectifier circuit for rectenna with diamond Schottky barrier diodes;　2016/06
  ANNOUNCEMENT INFO.;　Compound Semiconductor Week 2016 (the 43rd International Symposium on Compound Semiconductors (ISCS)), June 27-30, 2016, Toyama, MoP-ISCS-015.
  AUTHOR;　T. Oishi, N. Kawano, and M. Kasu
  
• ダイヤモンドショットキーバリアダイオードによるレクテナ回路の作製;　2016/05
  ANNOUNCEMENT INFO.;　, ED2016-18, 2016年5月20日, 25-28
  AUTHOR;　
  
• Si基板中キャリアの温度依存特性を考慮したGaN-on-Siのモデリング;　2016/03
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• ダイヤモンド素子を用いたレクテナ回路の作製;　2016/03
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• 効率無線電力伝送を目指したダイヤモンド・レクテナデバイスの提案;　2016/03
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• 高濃度Snドープβ-Ga2O3(2-01)単結晶の温度特性の検討;　2016/03
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• β-Ga2O3ショットキーバリアダイオード素子特性の分布;　2016/03
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• ダブルNO2ホールドーピングを用いたダイヤモンド電界効果トランジスタの作製;　2016/03
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• Fabrication of Schottky Barrier Diodes of EFG-Grown Sn-doped β-Ga2O3 (201) single-crystals;　2015/11
  ANNOUNCEMENT INFO.;　International Workshop on Gallium Oxide and Related Materials 2015, Nov. 4-6 , Kyoto, E28., 2015, Nov. 4-6 , Kyoto, E28.
  AUTHOR;　Y.Koga, K.Harada, K.Hanada, T.Oishi, and M.Kasu
  
• NO2吸着ダイヤモンドFETデバイスモデルの提案;　2015/09
  ANNOUNCEMENT INFO.;　, C-10-2
  AUTHOR;　
  
• 複数のトラップを考慮したGaN HEMTの大信号モデル;　2015/09
  ANNOUNCEMENT INFO.;　, C-2-11
  AUTHOR;　
  
• Snドープβ-Ga2O3(2-01)単結晶のショットキーバリアダイオードの作製;　2015/09
  ANNOUNCEMENT INFO.;　, 15p-1B-3
  AUTHOR;　
  
• NO2分子によるホールドーピングを用いた水素終端ダイヤモンド電界効果トランジスタの作製;　2015/09
  ANNOUNCEMENT INFO.;　, 16p-4C-4
  AUTHOR;　
  
• Study of two dimensional effects in forward characteristics of GaN Schottky barrier diodes by using patterns with two different sizes;　2015/08
  ANNOUNCEMENT INFO.;　11th Topical workshop on heterostructure microelectronics (TWHM 2015), Aug. 23-26, 2015, Takayama, 8-7., Aug. 23-26, 2015, Takayama, 8-7.
  AUTHOR;　D.Yoshikawa, T.Oishi, S.Yamaguchi, Y.Yamaguchi, K.Yamanaka
  
• Analysis for forward characteristics of GaN Schottky barrier diodes using floating electrodes;　2015/08
  ANNOUNCEMENT INFO.;　11th Topical workshop on heterostructure microelectronics (TWHM 2015), Aug. 23-26, 2015, Takayama, 8-8., Aug. 23-26, 2015, Takayama, 8-8.
  AUTHOR;　S.Yamaguchi, D.Yoshikawa, Y.Yamaguchi, K.Yamanaka, T.Oishi,
  
• Simulation study of NO2-exposed H-terminated diamond FETs with Al2O3 insulator gate;　2015/06
  ANNOUNCEMENT INFO.;　The 2015 international Meeting for Future of Electron Devices, Kansai (IMFEDK), June 4-5 2015, Kyoto, PA-01.
  AUTHOR;　T.Oishi, R.Higashi, K.Harada, K.Hirama, and M.Kasu
  
• 高移動度β-Ga2O3(-201)単結晶を用いたショットキーバリアダイオードの作製;　2015/05
  ANNOUNCEMENT INFO.;　, ED2015-22, 31-34
  AUTHOR;　
  
• 浮遊電極測定を用いたGaNショットキーバリアダイオードの順方向特性の解析;　2015/05
  ANNOUNCEMENT INFO.;　, ED2015-23, 35-40
  AUTHOR;　
  
• Al2O3絶縁膜を有するNO2吸着H終端処理ダイヤモンドFETのデバイスシミュレーション;　2015/05
  ANNOUNCEMENT INFO.;　, ED2015-24, 41-44
  AUTHOR;　
  
• 高移動度β-Ga2O3単結晶を用いたショットキーバリアダイオードの作製;　2015/03
  ANNOUNCEMENT INFO.;　, 12a-D10-6
  AUTHOR;　
  
• GaNショットキーバリアダイオードの順方向特性におけるアノード電極端効果;　2015/03
  ANNOUNCEMENT INFO.;　, 12a-A21-6
  AUTHOR;　
  
• 三端子構造を用いたGaNショットキーバリアダイオードの寄生抵抗解析;　2015/03
  ANNOUNCEMENT INFO.;　2015年第62回応用物理学会春季学術講演会　2015年3月12日、　東海大学　12a-A21-7, 12a-A21-7
  AUTHOR;　
  
• 低周波インピーダンス測定によるGaN HEMTのトラップモデリング;　2015/03
  ANNOUNCEMENT INFO.;　, 12p-A21-8
  AUTHOR;　
  
• 過渡応答測定とTCADによるGaN HEMTのトラップモデリング;　2015/01
  ANNOUNCEMENT INFO.;　, ED2014-129, MW2014-193, 71
  AUTHOR;　
  
• GaN High Electron Mobility Transistorのゲート長依存性の検討;　2014/12
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• Ni/Auを用いたβ-Ga2O3のショットキーバリアダイオードの作成;　2014/12
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• 三端子構造を用いたGaN SBDの順方向特性解析;　2014/12
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• Modeling of Frequency Dispersion at Low Frequency for GaN HEMT;　2014/11
  ANNOUNCEMENT INFO.;　2014 Asia-Pacific Microwave Conference (APMC2014), Nov. 6, 2014, Sendai, Japan. TH1G-24
  AUTHOR;　 Y. Yamaguchi, T. Oishi, H. Otsuka, T. Nanjo, H. Koyama, Y. Kamo, and K. Yamanaka
  
• Diamond RF Power Transistors: Present Status and Challenges;　2014/10
  ANNOUNCEMENT INFO.;　2014 Europian Microwave Conference (EuMW2014), Oct. 6 2014, Roma, Italy. EuMIC09-03
  AUTHOR;　M.Kasu and T.Oishi
  
• ダイヤモンドMOSFET のゲート容量の周波数依存性;　2014/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• Decrease in On-State Gate Current of AlGaN/GaN HEMTs by Recombination-Enhanced Defect Reaction of Generated Hot Carriers;　2014/05
  ANNOUNCEMENT INFO.;　Reliability of compound semiconductors (ROCS2014), May 19, 2014, Colorado, USA. Session III Part 2
  AUTHOR;　H.Sasaki, K.Kadoiwa, H.Koyama, Y.Kamo, Y.Yamamoto, T.Oishi, K.Hayashi and K.H.Teo
  
• GaN HEMTの過渡応答バイアス依存性によるトラップ解析;　2014/03
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• GaNショットキーバリアダイオードの温度依存性モデル;　2014/03
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• Decrease in On-State Gate Current of AlGaN/GaN HEMTs by Recombination-Enhanced Defect Reaction of Generated Hot Carriers;　2014
  ANNOUNCEMENT INFO.;　Reliability of compound semiconductors (ROCS2014), May 19, 2014, Colorado, USA. Session III Part 2., Session III Part 2, Session III Part 2
  AUTHOR;　H.Sasaki, K.Kadoiwa, H.Koyama, Y.Kamo, Y.Yamamoto, T.Oishi, K.Hayashi and K.H.Teo
  
• Diamond RF Power Transistors: Present Status and Challenges;　2014
  ANNOUNCEMENT INFO.;　2014 Europian Microwave Conference (EuMW2014), Oct. 6 2014, Roma, Italy. EuMIC09-03., EuMIC09-03
  AUTHOR;　M.Kasu and T.Oishi
  
• Modeling of Frequency Dispersion at Low Frequency for GaN HEMT;　2014
  ANNOUNCEMENT INFO.;　2014 Asia-Pacific Microwave Conference (APMC2014), Nov. 6, 2014, Sendai, Japan. TH1G-24., TH1G-24.
  AUTHOR;　Y. Yamaguchi, T. Oishi, H. Otsuka, T. Nanjo, H. Koyama, Y. Kamo, and K. Yamanaka
  
• Analysis on trade-off between drain resistance and drain-source capacitance of source field plate GaN HEMT;　2013/09
  ANNOUNCEMENT INFO.;　Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials (SSDM2013), September 24-27, 2013, Fukuoka, Japan, J-6-3.
  AUTHOR;　Y.Yamaguchi, K.Hayashi, T.Oishi, H.Otsuka, K.Yamanaka, and Y.Miyamoto
  
• An Improved Raab Method Taking Account of the Effects of Cutoff Frequency and Parastic Components;　2013/09
  ANNOUNCEMENT INFO.;　10th Topical Workshop on Heterostructure Microelectronics (TWHM2013), Sept 2-5, 2013, Hakodate, Japan, 3-3.
  AUTHOR;　H.Otsuka, T. Oishi, Y. Yamaguchi, K. Hayashi, T. Nanjo, K. Yamanaka, M. Nakayama, and I. Angelov
  
• Simulation study of gate leakage current under three-terminal operation for AlGaN/GaN HEMTs;　2013/09
  ANNOUNCEMENT INFO.;　10th Topical Workshop on Heterostructure Microelectronics (TWHM2013), Sept 2-5, 2013, Hakodate, Japan, 4-3.
  AUTHOR;　T.Oishi, K.Hayashi, H.Sasaki, Y.Yamaguchi, K.H.Teo, H.Otsuka, K.Yamanaka, M.Nakayama and Y.Miyamoto
  
• 5.8GHz 帯シングル-シャント形GaN HEMT 整流器の試作;　2013/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• ソースフィールドプレートGaN HEMTのドレインソース間容量とドレイン抵抗のトレードオフの解析;　2013/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• 高周波増幅器の設計におけるシミュレータ利用の実際;　2013/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• 過渡応答測定とTCADによるGaN HEMTのバッファトラップの解析;　2013/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• Design of enhancement mode single-gate and double-gate multi-channel GaN HEMT with vertical polarity inversion heterostructure;　2013/05
  ANNOUNCEMENT INFO.;　The 25th International Symposium on Power Semiconductor Devices and ICs (ISPSD2013), May 26-30, Kanazawa, Japan, WB-P10.
  AUTHOR;　P.Feng, K.H.Teo, T.Oishi, K.Yamanaka, and R.Ma
  
• 波形整形理論に基づくGaN HEMT設計手法の提案;　2013/03
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• デバイスシミュレーションによるAlGaN/GaN HEMTのドレインリーク解析;　2013/03
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• Simulation study and reduction of reverse gate leakage current for GaN HEMTs;　2012/10
  ANNOUNCEMENT INFO.;　IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS2012), October 14-17, California, session L.2.
  AUTHOR;　Y.Yamaguchi, K.Hayashi, T.Oishi, H.Otsuka, T.Nanjo, K.Yamanaka, M.Nakayama, and Y.Miyamoto
  
• Analysis on trade-off between electric field and gate-drain capacitance for GaN HEMT by T-CAD simulation;　2012/09
  ANNOUNCEMENT INFO.;　Extended Abstracts of the 2012 International Conference on Solid State Devices and Materials (SSDM2012), September 25-27, 2012, Kyoto, Japan, pp.214-215.
  AUTHOR;　Y.Yamaguchi, K.Hayashi, T.Oishi, H.Otsuka, K.Yamanaka, M.Nakayama, and Y.Miyamoto
  
• Mechanism study of gate leakage current for AlGaN/GaN HEMT structure under high reverse bias by TSB model and TCAD simulation;　2012/09
  ANNOUNCEMENT INFO.;　Extended Abstracts of the 2012 International Conference on Solid State Devices and Materials (SSDM2012), September 25-27, 2012, Kyoto, Japan, pp.907-908.
  AUTHOR;　T.Oishi, K.Hayashi, Y.Yamaguchi, H.Otsuka, K.Yamanaka, M.Nakayama, and Y.Miyamoto
  
• GaN HEMTを用いた5.8GHz帯シングル-シャント型整流器の設計;　2012/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• トラップを考慮したGaN on Si大信号モデル;　2012/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• トランジスタ動作時におけるGaN HEMTゲートリークのデバイスシミュレーションによる解析;　2012/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• GaN HEMTの電界とゲートドレイン間容量のトレードオフとPAEへの影響についてのシミュレーション解析;　2012/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• GaN-HEMTノーマリーオフ化のためのしきい値電圧制御に関する研究;　2012/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• C帯高効率GaN HEMT発振器;　2012/03
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• デバイスシミュレーションによるGaN HEMTのゲートリークの解析;　2012/03
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• GaN HEMT のソース・ドレイン間容量のデバイスシミュレーションによる解析;　2012/03
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• 短ゲート化によるSSPS用GaN増幅器の高効率化検討;　2012/01
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• AlGaN/GaN HEMTのドレインリーク電流解析;　2012/01
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• 短ゲート化によるSSPS用GaN増幅器の高効率化検討;　2012/01
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• AlGaN/GaN HEMTのドレインリーク電流解析;　2012/01
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• Design and simulation of enhancement-mode N-polar GaN single-channel and dual-channel MIS-HEMTs;　2011/12
  ANNOUNCEMENT INFO.;　2011 International Semiconductor Device Research Symposium (ISDRS2011), December 7-9, 2011, Maryland, FA6-04.
  AUTHOR;　P.Feng, K.H.Teo, T.Oishi, M.Nakayama, C.Duan, J.Zhang
  
• 緑色光照射時の等価回路パラメータ測定によるGaN HEMTのトラップ解析;　2011/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• GaN HEMTにおけるゲートリークの解析;　2011/03
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• 半物理的な非線形モデルの高周波特性計算;　2010/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• 半物理的な非線形モデルによるデバイス構造検討手法の提案;　2010/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• Semi-physical nonlinear model for HEMTs with simple equations;　2010/04
  ANNOUNCEMENT INFO.;　2010 Workshop on Integrated Nonlinear Microwave and Millimeter-Wave Circuits (INMMIC2010), April 26-27, 2010, Goteborg, Sweden, pp.20-23.
  AUTHOR;　T.Oishi, H.Otsuka, K.Yamanaka, A.Inoue, Y.Hirano and I.Angelov
  
• GaN HEMTの半物理的な非線形モデルの提案;　2010/03
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• SiC基板上 AlGaNチャネル HEMTにおけるドレイン電流の向上;　2009/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• 動的負荷線測定に基づいたGaN HEMT大信号モデル;　2009/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• GaN HEMTにおけるGaNバッファ層中トラップの解析;　2009/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• Si注入ドーピングを適用したAlGaN/AlN/GaN HEMTにおけるドレイン電流の向上;　2009/04
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• Siイオン注入ドーピング技術を適用したAlGaN/AlN/GaN HEMT;　2009/03
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• Siイオン注入ドーピング技術を適用したAlGaN/AlN/GaN HEMT;　2009/03
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• Si注入ドーピングしたAlGaN/GaNに対するAlフリーオーミック電極;　2009/03
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• AlGaNチャネルHEMTにおける2次元電子ガス濃度のエピ構造依存性;　2008/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• AlGaNチャネルHEMTにおけるドレイン耐圧の向上;　2008/03
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• AlGaNチャネルHEMTにおけるドレイン耐圧の向上;　2008/03
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• AlGaNチャネルHEMTにおける残留キャリアのバッファ層構造依存性;　2008/03
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• AlGaN チャネルHEMT におけるドレイン耐圧の向上;　2008/03
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• Remarkable breakdown voltage enhancement in AlGaN channel HEMTs;　2007/12
  ANNOUNCEMENT INFO.;　Technical Digest of 2007 International Electron Devices Meeting (IEDM2007), December 10-12, 2007, Washington DC, pp.397-400.
  AUTHOR;　T.Nanjo, M.Takeuchi, M.Suita, Y.Abe, T.Oishi, Y.Tokuda, and Y.Aoyagi
  
• First Operation of AlGaN Channel High Electron Mobility Transistors with Sufficiently Low Resistive Source/Drain Contact formed by Si Ion Implantation;　2007/09
  ANNOUNCEMENT INFO.;　Extended Abstracts of the 2007 International Conference on Solid State Devices and Materials (SSDM2007), September 18-21, 2007, Tsukuba, Japan, pp.164-165.
  AUTHOR;　T.Nanjo, M.Takeuchi, M.Suita, Y.Abe, T.Oishi, Y.Tokuda, and Y.Aoyagi
  
• Ion implantation doping for AlGaN/GaN HEMTs;　2005/08
  ANNOUNCEMENT INFO.;　The 6th International Conference on Nitride Semiconductors (ICNS2005), Aug. 28- Sep. 2, 2005, Bremen Germany, Th-P-011.
  AUTHOR;　M.Suita, T.Nanjo, T.Oishi, Y.Abe, K.Marumoto
  
• A C-Band AlGaN/GaN HEMT with Cat-CVD SiN Passivation Developed for an Over 100 W Operation;　2005/06
  ANNOUNCEMENT INFO.;　IEEE MTT-S 2005 International Microwave Symposium (IMS2005), June 12-17, 2005, Long Beach California, WE1E-4.
  AUTHOR;　Y. Kamo, T. Kunii, H. Takeuchi, Y. Yamamoto, M. Totsuka, T. Shiga, H. Minami, T. Kitano, S. Miyakuni, T. Oku, A. Inoue, T. Nanjo, H. Chiba, M. Suita, T. Oishi, Y. Abe, Y. Tsuyama, R. Shirahana, H. Ohtsuka, K. Iyomasa, K. Yamanaka, M. Hieda, M. Nakayama, T. Ishikawa, T. Takagi, K. Marumoto and Y. Matsuda
  
• Cat-CVD法による表面パッシベーション膜を用いた高信頼度GaN HEMT;　2005/01
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• A High Reliability GaN HEMT with SiN Passivation by Cat-CVD;　2004/10
  ANNOUNCEMENT INFO.;　Compound Semiconductor Integrated Circuit Symposium (CSICS 2004), Oct. 24-27, Monterey California, pp.197-200.
  AUTHOR;　T.Kunii, M.Totsuka, Y.Kamo, Y.Yamanoto, H.Takeuchi, Y.Shimada, T.Shiga, H.Minami, T.Kitano, S.Miyakuni, S.Nakatsuka, A.Inoue, T.Oku, T.Nanjo, T.Oishi, T.Ishikawa, and Y.Matsuda
  
• Improvement of DC and RF characteristics of AlGaN/GaN HEMTs by thermally annealed Ni/Pt/Au Schottky gate;　2003/09
  ANNOUNCEMENT INFO.;　Extended Abstracts of the 2003 International Conference on Solid State Devices and Materials (SSDM2003), September 16-18, 2003, Tokyo, Japan, pp.136-137.
  AUTHOR;　T.Nanjo, N.Miura, T.Oishi, M.Suita, Y.Abe, T.Ozeki, S.Nakatsuka, A.Inoue, T.Ishikawa, Y.Matsuda, H.Ishikawa, and T.Egawa
  
• Improvement of Schottky characteristics by insertion of refractory metal into Ni/Au electrode on n-(Al)GaN with thermal annealing;　2003/06
  ANNOUNCEMENT INFO.;　Electronic Materials Conference (EMC2003), June 25-27, 2003, Utah, T7.
  AUTHOR;　N.Miura, T.Nanjo, M.Suita, T.Oishi, Y.Abe, T.Ozeki, H.Ishikawa, T.Egawa, T.Jinbo
  
• n-(Al)GaN上ショットキー電極の金属膜構成と熱処理依存性;　2003
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• AlGaN/GaN HEMTの素子分離としてのZn注入;　2002
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• Self-Aligned Pocket Implantation into Elevated Source,/Drain MOSFETs for Reduction of Junction Capacitance and Leakage Current;　2000/08
  ANNOUNCEMENT INFO.;　Extended Abstracts of the 2000 International Conference on Solid State Devices and Materials (SSDM2000), August 29-31, 2000, Sendai, Japan, pp.52-53.
  AUTHOR;　N.Miura, Y.Abe, K.Sugihara, T.Oishi, T.Furukawa, T.Nakahara, K.Shiozawa, S.Maruno, and Y.Tokuda
  
• サブ0.1μm CMOS技術 -エレベイテッドソース・ドレイン技術を中心に-;　2000
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• Effect of <100> channel direction for high performance SCE immune pMOSFET with less than 0.15 μm gate length;　1999/12
  ANNOUNCEMENT INFO.;　Technical Digest of 1999 International Electron Devices Meeting (IEDM1999), December 5-8, 1999, Washington DC, pp.657-660.
  AUTHOR;　H.Sayama, Y.Nishida, H.Oda, T.Oishi, S.Shimizu, T.Kunikiyo, K.Sonoda, Y.Inoue, M.Iuishi
  
• Low resistance Co-salicided 0.1 μm CMOS technology using selective Si growth;　1999/06
  ANNOUNCEMENT INFO.;　Digest of Technical Papers of Symposium on VLSI Technology (VLSI Symp. 1999), June 14-16, 1999, Kyoto, pp.55-56.
  AUTHOR;　H.Sayama, S.Shimizu, Y.Nishida, T.Kuroi, Y.Kanda, M.Fujisawa, Y.Inoue, T.Nishimura, T.Oishi, T.Nakahara, T.Furukawa, D.Yamakawa, Y.Abe, S.Maruno, Y.Tokuda, S.Satoh
  
• Noticeable enhancement of edge effect in short channel characteristics of trench-isolated MOSFETs;　1998/09
  ANNOUNCEMENT INFO.;　Extended Abstracts of the 1998 International Conference on Solid State Devices and Materials (SSDM1998), September 7-10, 1998, Hiroshima, Japan, pp.86-87.
  AUTHOR;　T.Oishi, K.Shiozawa, A.Furukawa, Y.Abe, and Y.Tokuda
  
• Excellent electrical characteristics of ultra-fine trench isolation;　1997/05
  ANNOUNCEMENT INFO.;　Proceedings of the Sixth International Symposium on Ultralarge Scale Integration Science and Technology (ULSI Science and Technology/1997), May 4-9, 1997, Quebec, Canada, pp.479-489.
  AUTHOR;　K.Shiozawa, T.Oishi, H.Maeda, T.Murakami, K.Yasumura, Y.Abe and Y.Tokuda
  
• Electrical characteristics of ultra-fine trench isolation fabricated by a new two-step filling process;　1996/08
  ANNOUNCEMENT INFO.;　Extended Abstracts of the 1996 International Conference on Solid State Devices and Materials (SSDM1996), August 26-29, 1996, Yokohama, Japan, pp.419-421.
  AUTHOR;　K.Shiozawa, T.Oishi, H.Maeda, T.Murakami, K.Yasumura, Y.Abe and Y.Tokuda
  
• Giga-bit scale DRAM cell with new simple Ru/(Ba,Sr)TiO3/Ru stacked capacitors using X-ray lithography;　1995/12
  ANNOUNCEMENT INFO.;　Technical Digest of 1995 International Electron Devices Meeting (IEDM1995), December 10-13, 1995, Washington DC, pp.903-906.
  AUTHOR;　Y.Nishioka, K.Shiozawa, T.Oishi, K.Kanamoto, Y.Tokuda, H.Sumitani, S.Aya, H.Yabe, K.Itoga, T.Hifumi, K.Marumoto, T.Kuroiwa, T.Kawahara, K.Nishikawa, T.Oomori, T.Fujino, S.Yamamoto, S.Uzawa, M.Kimata, M.Nunoshita and H.Abe
  
• In-Plane Orientation and Coincidence Site Lattice Relation of Bi2Sr2CaCu2Ox Thin Films Formed on Highly Mismatched (001) YAG Substrates;　1993/08
  ANNOUNCEMENT INFO.;　Extended Abstracts of the 1993 International Conference on Solid State Devices and Materials (SSDM1993), August 29-Sept. 29, 1993, Chiba, Japan, pp.775-777.
  AUTHOR;　M.Kataoka, K.Kuroda, T.Takami, T.Oishi, J.Tanimura, T.Ogama, and K.Kojima
  
• Dry etching of BiSrCaCuO superconducting thin films using argon and ethane;　1992/11
  ANNOUNCEMENT INFO.;　Proceedings of the 5th International symposium on superconductivity (ISS '92), November 16-19, 1992, Kobe, Japan, pp.1029-1032.
  AUTHOR;　T.Oishi, T.Takami, K.Kojima, K.Kuroda, and O.Wada
  
• A novel InGaAsP/InP bistable-bipolar transistor;　1990/09
  ANNOUNCEMENT INFO.;　Int. Symp. GaAs and related compounds, Inst. Phys. Conf. Ser. No.112. Chapter 7 , September 24-27, 1990, Jersey, England, pp.503-508.
  AUTHOR;　T.Ohishi, Y.Abe, H.Sugimoto, and Y.Nomura
  
• 微分負性抵抗特性を示すヘテロ接合バイポーラトランジスタ;　1990/05
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• エタン・水素混合ガスを用いたRIEによりエッチングしたInPのAES,PL評価;　1989/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• 開管法によるInP, InGaAsへのZn拡散;　1989/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• C2H6/H2 RIEにより端面形成した1.5μm帯InGaAs/InPレーザ;　1989/01
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• 多層ベースInGaAsP/InP HBT;　1988/11
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• Novel fabrication methods of gratings for DFB lasers using ECR-CVD SiNx films;　1988/09
  ANNOUNCEMENT INFO.;　Fourteenth European Conference on Optical Communication (ECOC 1988), September 11-15, 1988, Glasgow, Scotland, pp.376-379.
  AUTHOR;　S.Sugimoto, Y.Abe, K.Ohtsuka, T.Ohishi, T.Matui, H.Ogata
  
• C2H6/H2ガスを用いたRIEによる化合物半導体のエッチング特性;　1988/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• Silicon nitride films by plasma-CVD from SiH4-N2 and SiF4-N2-H gas mixtures;　1984/12
  ANNOUNCEMENT INFO.;　Technical Digest of 1984 International Electron Devices Meeting (IEDM1984), December 9-12, 1984, San Francisco, pp.630-633.
  AUTHOR;　Sz.Fujita, N-S.Zhou, H.Toyoshima, T.Ohishi, A.Sasaki
  
• SiF4-N2-H2系プラズマCVDシリコン窒化膜の作製および電気的特性;　1984/03
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  

Application of Intellectual Property Rights

• 窒化物半導体装置およびその製造方法;　2013/07
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• Semiconductor device and manufacturing method thereof;　2012/04
  ANNOUNCEMENT INFO.;　
  AUTHOR;　T.Oishi, Y.Yamamoto, H.Otsuka, K.Yamanaka, A.Inoue
  
• 半導体装置の製造方法;　2012/03
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• 窒化物半導体装置の製造方法;　2011/12
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• Nitride semiconductor heterojunction field effect transistor having wide band gap barrier layer that includes high concentration impurity region;　2011/10
  ANNOUNCEMENT INFO.;　
  AUTHOR;　T.Nanjo, M.Suita, Y.Abe, T.Oishi, Y.Tokuda
  
• 窒化物半導体装置およびその製造方法;　2011/06
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• Nitride semiconductor device including an electrode in ohmic contact with a p-type nitride semiconductor contact layer;　2011/05
  ANNOUNCEMENT INFO.;　
  AUTHOR;　K.Shiozawa, K.Kanamoto, T.Oishi, H.Kurokawa, K.Ohtsuka, Y.Tarui, Y.Tokuda
  
• Nitride semiconductor device and method of manufacturing the same;　2010/11
  ANNOUNCEMENT INFO.;　
  AUTHOR;　K.Shiozawa, T.Oishi, K.Kawasaki, Y.Abe
  
• Nitride semiconductor device and manufacturing method the same;　2010/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　K.Kanamoto, K.Shiozawa, K.Kawasaki, H.Sakuma, J.Horie, T.Shiga, T.Oishi
  
• Nitride semiconductor device and method of manufacturing the same;　2010/05
  ANNOUNCEMENT INFO.;　
  AUTHOR;　K.Shiozawa, H.Sakuma, K.Kawasaki, T.Shiga, T.Oishi
  
• 窒化物半導体装置およびその製造方法;　2010/03
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• Method of manufacturing semiconductor device including gallium-nitride semiconductor structure and a palladuim contact;　2010/03
  ANNOUNCEMENT INFO.;　
  AUTHOR;　K.Otuska, Y.Tarui, Y.Suzuki, K.Shiozawa, K.Kanamoto, T.Oishi, Y.Tokuda, T.Omori
  
• 窒化物半導体装置の製造方法;　2009/10
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• 半導体装置およびその製造方法;　2008/07
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• Method of manufacturing nitride semiconductor device;　2008/05
  ANNOUNCEMENT INFO.;　
  AUTHOR;　K.Shiozawa, T.Oishi, K.Kawasaki, Z.Kawazu, Y.Abe
  
• 半導体装置の製造方法;　2008/04
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• 半導体レーザ装置;　2004/03
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• Semiconductor device;　2003/10
  ANNOUNCEMENT INFO.;　
  AUTHOR;　N.Miura, T.Oishi, Y.Abe, K.Sugihara
  
• Semiconductor device and manufacturing method thereof;　2003/10
  ANNOUNCEMENT INFO.;　
  AUTHOR;　T.Nakahata, S.Maruno, T.Furukawa, N.Miura, T.Oishi, Y.Tokuda
  
• Semiconductor device with sidewall spacers and elevated source/drain region;　2003/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　T.Oishi, K.Sugihara, N.Miura, Y.Abe, Y.Tokuda
  
• Method of making field effect transistor in which the increase of parasitic capacitance is restrained by scale reduction;　2003/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　Y.Abe, N.Miura, K.Sugihara, T.Oishi, Y.Tokuda
  
• Semiconductor device;　2003/07
  ANNOUNCEMENT INFO.;　
  AUTHOR;　Y.Nishida, H.Sayama, H.Oda, T.Oishi
  
• Semiconductor device and manufacturing method;　2003/06
  ANNOUNCEMENT INFO.;　
  AUTHOR;　H.Sayama, H.Oda, Y.Nishida,T.Oishi
  
• Semiconductor device;　2003/05
  ANNOUNCEMENT INFO.;　
  AUTHOR;　K.Sugihara, T.Oishi, N.Miura, Y.Abe, Y.Tokuda
  
• Semiconductor device and manufacturing method thereof;　2003/02
  ANNOUNCEMENT INFO.;　
  AUTHOR;　K.Shiozawa, T.Oishi, Y.Abe
  
• Semiconductor device manufacturing method;　2002/06
  ANNOUNCEMENT INFO.;　
  AUTHOR;　T.Oishi, Y.Nshida, H.Sayama, H.Oda
  
• トレンチ分離構造の最適化方法;　2002/05
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• Method of manufacturing semiconductor device;　2002/02
  ANNOUNCEMENT INFO.;　
  AUTHOR;　T.Oishi, Y.Nishida, H.Sayama
  
• レーザ薄膜形成装置;　2001/11
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• Semiconductor device comprising trench isolation insulator film and method of fabricating the same;　2001/06
  ANNOUNCEMENT INFO.;　
  AUTHOR;　K.Shiozawa, T.Oishi,
  
• 高温超電導薄膜のエッチング方法;　2000/10
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• Semiconductor device including trench isolation structure and a method of manufacturing thereof;　2000/07
  ANNOUNCEMENT INFO.;　
  AUTHOR;　T.Murakami, K.Yasumura, T.Ohishi, K.Shiozawa
  
• Thin film forming apparatus using laser;　2000/04
  ANNOUNCEMENT INFO.;　
  AUTHOR;　K.Haruta, K.Ono, H.Wakata, M.Tsuda, Y.Saito, K.Nanba, K.Kojima, T.Takami, A.Suzuki, T.Sasagawa, K.Kuroda, T.Oishi, Y.Wada, A.Furukawa, Y.Matsui, A.Yuki, T.Kawahara, H.Yabe, T.Furukawa. K.Kise, N.Mikami, T.Horikawa, T.Makita, K.Kuramoto, N.Fujino, H.Kuroki, T.Ogama, J.Tanimura
  
• 超電導体試料のエッチング方法;　1999/11
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• 半導体レーザ装置;　1999/04
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• 回折格子製造方法;　1997/12
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• 分布帰還型半導体レーザの製造方法;　1997/07
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• Thin film forming apparatus using laser;　1997/04
  ANNOUNCEMENT INFO.;　
  AUTHOR;　K.Kojima, T.Takami, K.Kuroda, T.Ohishi, Y.Wada, A.Furukawa
  
• 半導体レーザの製造方法;　1997/03
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• 分布帰還型半導体レーザ;　1997/02
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• 半導体レーザおよびその使用方法;　1996/10
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• Process of producing diffraction grating;　1996/07
  ANNOUNCEMENT INFO.;　
  AUTHOR;　H.Sugimoto, T.Matsui，K.Ohtsuka, Y.Abe, T.Ohishi,
  
• 半導体レーザおよびその使用方法;　1996/06
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• 半導体レーザおよびその使用方法;　1996/06
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• 化合物半導体材料の加工方法;　1996/04
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• 半導体レーザの製造方法;　1995
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• Process of producing diffraction grating;　1994/04
  ANNOUNCEMENT INFO.;　
  AUTHOR;　H.Sugimoto, T.Matsui，K.Ohtsuka, Y.Abe, T.Ohishi
  
• Heterojunction avalanche transistor;　1991/07
  ANNOUNCEMENT INFO.;　
  AUTHOR;　T.Ohishi, Y.Abe, H.Sugimoto, K.Ohisuka, T.Matsui
  
• Semiconductor laser device;　1991/05
  ANNOUNCEMENT INFO.;　
  AUTHOR;　Y.Abe, H.Sugimoto, K.Ohtsuka, T.Ohishi, T.Matsui
  

Invited Lecture, Special Lecture

• Device Modeling for GaN HEMTs;　2018/11
  ANNOUNCEMENT INFO.;　2018 Microwave Workshops & Exhibition (MWE2018), パシフィコ横浜、2018年11月30日、ワークショップFR5B-3
  AUTHOR;　
  
• Present Status of Research and Development of Super wide bandgap electron devices;　2018/11
  ANNOUNCEMENT INFO.;　2018 Microwave Workshops & Exhibition (MWE2018), パシフィコ横浜、2018年11月30日、ワークショップFR5B-2
  AUTHOR;　
  
• Recent Progress of Diamond Devices for RF Applications;　2016/10
  ANNOUNCEMENT INFO.;　38th IEEE COMPOUND SEMICONDUCTOR IC (CSIC) SYMPOSIUM, Oct. 23-26, 2016, Austin, Texas, Q.2.
  AUTHOR;　M. Kasu, T. Oishi
  
• Diamond devices for RF applications;　2016/08
  ANNOUNCEMENT INFO.;　2016 URSI Asia-Pacific Radio Science Conference (URSI AP-RASC), 21-25 Aug. 2016, Korea, S-D5-5, pp.828-830.
  AUTHOR;　M. Kasu, T. Oishi
  
• 等価回路モデルを利用したレクテナRF-DC変換効率計算　―大電力RFデバイスに適した半導体材料の検討―;　2016/01
  ANNOUNCEMENT INFO.;　電子情報通信学会研究会　ED2015-116、2016年1月20日, pp.25-29., 25-29
  AUTHOR;　
  
• 将来が期待される萌芽的デバイス　–さらなる高出力高周波化に向けて-;　2015/09
  ANNOUNCEMENT INFO.;　, CT-1-7
  AUTHOR;　
  
• 回路設計のためのデバイスモデリング技術;　2014/12
  ANNOUNCEMENT INFO.;　2014 Microwave Workshops & Exhibition (MWE2014)　 パシフィコ横浜、2014年12月11日、ワークショップ06-4
  AUTHOR;　
  
• TCADシミュレーションを用いたGaN HEMTの半物理的非線形回路モデル;　2013/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• デバイスと回路シミュレーションの連携によるGaN HEMTの 半物理的 非線形モデル;　2012/07
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• 「Compact equivalent circuits and table based FET models –Is there one winner for circuit designers and foundries ? 」(2011年6月6日，Baltimore, MD) 　　「Current and future demands for nonlinear modeling for microwave applications」（Additional speakerで講演）;　2011/06
  ANNOUNCEMENT INFO.;　2011 IEEE MTT-S International microwave symposiumのワークショップ
  AUTHOR;　I.Angelov, T.Oishi
  
• 窒化物半導体の高周波・高出力デバイス技術;　2005/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• AlGaN/GaN HEMT with thermally annealed Ni/Pt/Au Schottky gate;　2004/03
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• LOCOS分離の限界とトレンチ分離の問題点;　1997/12
  ANNOUNCEMENT INFO.;　
  AUTHOR;