Detailed Information

Research Field/Keywords for Research Field

• Synchrotron light, Compound semiconductor, Epitaxial growth

Education

• 1996/03, Graduated
• 1998/03, Master Course, Completed
• 2003/09, Doctor Course, Completed

Employment Experience

• 2003/04 - 2005/03 Saga University
• 2005/04 - 2006/07 Saga University
• 2006/08 - 2007/03
• 2007/04 - 2008/06 Synchrotron Light Application Center, Saga University
• 2008/07 - 2008/08 Saga University
• 2009/04 -  *  Assistant Professor, Synchrotron Light Application Center, Saga University

Field of Specialization

• Applied materials, Crystal engineering, Thin film/Surface and interfacial physical properties, Electronic materials/Electric materials

Membership in Academic Societies

• The Japanese Society for Synchrotron Radiation Research, The Japan Society of Applied Physics

Research Topics and Results

• MOVPE 法を用いたSiO2/Si上グラフェンへのZnTe 薄膜形成 2023/11
• MOVPE成長したAlドープZnTe薄膜におけるポストアニール処理の効果 2023/09
• MOVPE成長Alドープ ZnTe薄膜特性に及ぼすポストアニーリング処理温度の影響 (２) 2022/11
• MOVPE成長AlドープZnTe薄膜特性に及ぼすポストアニーリング処理温度の影響 2021/12
• GGG基板上ZnTe薄膜のMOVPE成長と評価 2021/09
• P and Al co-doped ZnTe Epilayers Grown by MOVPE 2019/10
• 減圧MOVPE 法による(100)GaAs 基板上へのZnMgSeTe 薄膜成長 2018/12
• MOVPE growth of ZnMgSeTe alloys on (100) GaAa substrates 2018/06
• Growth of ZnMgSeTe nearly lattice-matched to ZnTe and p-type doping by low-pressure MOVPE 2017
• Photoluminescence and electrical properties of P-doped ZnTe layers grown by low pressure MOVPE 2017
• Growth of ZnMgSeTe nearly Lattice-matched to ZnTe and p-type Doping by Low-pressure MOVPE 2016/08
• Photoluminescence and Electrical Properties of P-doped ZnTe Layers Grown by Low Pressure MOVPE 2016/08
• Influence of source transport rate upon fractions of Mg and Se in Zn1-xMgxSeyTe1-y Layers grown by metalorganic vapor phase epitaxy 2016
• Low Pressure MOVPE Growth and Characterization of ZnTe Homoepitaxial Layers 2016
• Influence of Source Transport Rate upon Compositions of Mg and Se in Zn1-xMgxSeyTe1-y Layers grown by Metalorganic Vapor Phase Epitaxy 2015/09
• Low Pressure MOVPE Growth and Characterization of ZnTe Homoepitaxial Layers 2015/09
• Compositions of Mg and Se, surface morphology, roughness and Raman property of Zn1-xMgxSeyTe1-y layers grown at various substrate temperatures or dopant transport rates by MOVPE 2015
• The effect of substrate temperature upon the compositions of Mg and Se in Zn1-xMgxSeyTe1-y layer grown by MOVPE 2014
• Correlation Between Photoluminescence and Carrier Concentration in Phosphorus-doped ZnTe 2013/09
• Growth and Characterization of Zn1-xMgxSeyTe1-y on ZnTe Substrate by Metalorganic Vapor Phase Epitaxy 2013/09
• シンクロトロン放射光電子分光法によるZnTe/GaAsへテロ界面のバンドアライメント評価 2013/07
• 第2編 第7章 第6節 ZnTe基板とLEDへの応用 2013
• Al電極の透明化により作製されたZnTe緑色LEDの特性 2012/12
• MOVPE法により成長されたPドープZn1-xMgxTeエピ膜の電気的性質及びフォトルミネッセンス特性に及ぼすアニール処理効果 2012/12
• 有機金属気相エピタキシャル法で成長されたZnTe膜の燐ドーピングに及ぼす原料供給量の影響 2012/12
• MOVPE法で作製されたZnTe薄膜の表面形態とフォトルミネッセンス特性 2012/12
• Enhanced Efficiency of ZnTe-Based Green Light-Emitting Diodes 2012/09
• Synchrotron-Radiation-Excited UV-VIS Luminescence Experimental Station at Saga University beamline BL13: Design and Installation Progress 2012/08
• Influence of (MeCp)2Mg Transport Rate upon Growth of Phosphorus-doped ZnMgTe Layers by MOVPE 2012/05
• Surface Morphologies and Photoluminescence Properties of Undoped and P-doped ZnTe Layers Grown by Metaloroganic Vapor Phase Epitaxy 2012/05
• Effects of Annealing Treatment upon Electrical and Photoluminescence Properties of Phosphorus-Doped ZnMgTe Epilayers Grown by Metaloroganic Vapor Phase Epitaxy 2012/05
• Characterization of ZnTe Epilayers on GaAs (111) Substrates by Metalorganic Vapor Phase Epitaxy 2012/05
• Effects of substrate temperature upon the properties of ZnMgTe layer grown by MOVPE 2012
• Influence of dopant transport rate upon photoluminescence and electrical properties of phosphorus-doped ZnMgTe layers grown by MOVPE 2012
• ＰドープZnMgTeエピ膜の成長特性に及ぼすDETe供給量依存性 2011/09
• ＰドープZnMgTeエピ膜の電気的性質に及ぼすTDMAP供給量効果 2011/09
• Influence of dopant transport rate upon photoluminescence and electrical properties of phosphorus-doped ZnMgTe layers grown by MOVPE 2011/08
• Influence of source transport rate upon phosphorus doping in ZnTe layer grown by MOVPE 2011/08
• Estimation of donor and acceptor levels in Al-doped ZnTe layers from photoluminescence measurement 2011
• Temperature dependence of photoluminescence from P-doped ZnMgTe bulk crystals of high quality grown by Bridgman method 2010
• Post-annealing effect upon electrical and optical properties of MOVPE grown P-doped ZnTe homoepitaxial layers 2009/01
• Improvement of MOVPE grown ZnTe:P layers by annealing treatment 2008
• Growth of undoped ZnMgTe layers by metalorganic vapour phase epitaxy 2008
• 半導体装置及びその製造方法 2007/09
• Growth characteristics of ZnMgTe layer on ZnTe substrate by metalorganic vapor phase epitaxy 2007
• Post-annealing effect upon phosphorus-doped ZnTe homoepitaxial layers grown by MOVPE 2007
• 半導体の製造方法 2006/08
• Phosphorus-doped ZnMgTe bulk crystals grown by Vertical Bridgman Method 2006
• Growth of boron-doped ZnTe homoepitaxial layer by metalorganic vapor phase epitaxy 2006
• Optical and Electrical Properties of Phosphorus-Doped ZnMgTe Bulk Crystals Grown by Bridgman Method 2006
• Magnetic rotation spectra of Co/Pt and Co/Cu multilayers in 50-90 eV region 2005
• Faraday and Magnetic Kerr Rotation Measurements on Co and Ni Films Around M2,3 Edges 2002
• Multilayer Polarizers for the Use of He-I and He-II Resonance Lines 2002
• Faraday Rotation Measurement around Ni M2,3 Edges Using Al/YB6 Multilayer Polarizers 1999

Books

• 第2編 第7章 第6節 ZnTe基板とLEDへの応用;　2013
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• Enhanced Efficiency of ZnTe-Based Green Light-Emitting Diodes;　2012/09
  ANNOUNCEMENT INFO.;　Light-Emitting Diodes and Optoelectronics: New Research, Nova Science Publishers, Inc. New York (2012). ISBN: 978-1-62100-448-6.
  AUTHOR;　T. Tanaka, K. Saito, Q. Guo, and M. Nishio
  

Original Articles

• Low-temperature photoluminescence characteristic of Tm-doped Ga2O3 films for light emitting diodes application;　2024/04
  ANNOUNCEMENT INFO.;　Optical Materials, 150, 115142
  AUTHOR;　Z. Chen, G. Deng, K. Saito, T. Tanaka and Q. Guo
  
• Temperature-dependent photoluminescence of r-GeO2 film deposited on r-plane sapphire by synchrotron radiation excitation;　2024/03
  ANNOUNCEMENT INFO.;　Journal of Luminescence, 267, 120353
  AUTHOR;　G. Deng, Y. Huang, Z. Chen, K. Saito, T. Tanaka, M. Arita, and Q. Guo
  
• Characteristics of Light-Emitting Diodes Based on Terbium-Doped Ga2O3 Films;　2024/01
  ANNOUNCEMENT INFO.;　Physica Status Solidi - Rapid Research Letters
  AUTHOR;　Q. Guo, Y. Koga, Z. Chen, K. Saito and T. Tanaka
  
• Improved phosphorus doping in ZnTe by molecular beam epitaxy under alternating source supply;　2023/11
  ANNOUNCEMENT INFO.;　Journal of Applied Physics, 134, 19, 193101
  AUTHOR;　M. Mustofa, K. Saito, Q. Guo and T. Tanaka
  
• Growth and characteristics of terbium doped Ga2O3 luminescent films;　2023/10
  ANNOUNCEMENT INFO.;　Journal of Crystal Growth, 620, 127361
  AUTHOR;　Q. Guo, Y. Koga, Z. Chen, K. Saito, T. Tanaka
  
• Enhancement of photoluminescence from Tm-doped (AlxGa1−x)2O3 films by pulsed laser deposition;　2023/09
  ANNOUNCEMENT INFO.;　Ceramics International, 49, 28702-28710
  AUTHOR;　Z. Chen, M. Arita, G. Deng, K. Saito, T. Tanaka, Q. Guo
  
• Low temperature growth of MgGa2O4 films for deep ultraviolet photodetectors;　2023/09
  ANNOUNCEMENT INFO.;　Optical Materials, 143, 114267
  AUTHOR;　Q. Guo, J. Tetsuka, Z. Chen, M. Arita, K. Saito, T. Tanaka
  
• Color-Tunable Light-Emitting Diodes Based on Rare Earth Doped Gallium Oxide Films;　2023/08
  ANNOUNCEMENT INFO.;　ACS Applied Electronic Materials, 5, 8, 4002 - 4013
  AUTHOR;　Q. Guo, K. Saito, T. Tanaka
  
• Growth of phosphorus-doped ZnTe thin films by molecular beam epitaxy using InP as the dopant source;　2023/08
  ANNOUNCEMENT INFO.;　Japanese Journal of Applied Physics, 62, SK, SK1031
  AUTHOR;　M. Mustofa, S. Mishima, K. Saito, Q. Guo, T. Tanaka
  
• Temperature dependence of luminescence characteristics from Eu doped Ga2O3thin films excited by synchrotron radiation source;　2023/06
  ANNOUNCEMENT INFO.;　Japanese Journal of Applied Physics, 62, 6, 061004
  AUTHOR;　Y. Huang, G. Deng, Z. Chen, K. Saito, T. Tanaka, Q. Guo
  
• Effect of heterojunction structures on photoelectrochemical properties of ZnTe-based photocathodes for water reduction;　2023/01
  ANNOUNCEMENT INFO.;　RSC Advances, 13, 1, 575-580
  AUTHOR;　T. Tanaka, R. Tsutsumi, T. Yoshinaga, T. Sonoyama, K. Saito, Q. Guo, S. Ikeda
  
• Near infrared-II light-emitting devices based on Er-doped Ga2O3 films;　2022/10
  ANNOUNCEMENT INFO.;　Optical Materials, 132, 112786
  AUTHOR;　Z. Chen, G. Deng, K. Saito, T. Tanaka, Q. Guo
  
• Heteroepitaxy of (100)-oriented rutile GeO2 film on c-plane sapphire by pulsed laser deposition;　2022/09
  ANNOUNCEMENT INFO.;　Materials Letters, 326, 132945
  AUTHOR;　G. Deng, Y. Huang, Z. Chen, K. Saito, T. Tanaka, M. Arita, Q. Guo
  
• Low-temperature growth of In2O3 films on a-plane sapphire substrates by pulsed laser deposition;　2022/08
  ANNOUNCEMENT INFO.;　Thin Solid Films, 756, 139383
  AUTHOR;　Z. Chen, K. Saito, T. Tanaka, Q. Guo
  
• Current-controlled electroluminescence from light-emitting diodes based on Tm, Er, and Eu codoped Ga2O3 thin films;　2022/08
  ANNOUNCEMENT INFO.;　Applied Physics Express, 15, 8, 81005
  AUTHOR;　Y. Huang, G. Deng, K. Saito, T. Tanaka, Q. Guo
  
• Strong enhancement of red photoluminescence from Eu doped Ga2O3 films by thermal annealing;　2022/06
  ANNOUNCEMENT INFO.;　Journal of Luminescence, 246, 118858
  AUTHOR;　Y. Huang, K. Saito, T. Tanaka, Q. Guo
  
• Near-infrared light-emitting diodes based on Tm-doped Ga2O3;　2022/05
  ANNOUNCEMENT INFO.;　Journal of Luminescence, 245, 118773
  AUTHOR;　Z. Chen, K. Saito, T. Tanaka, Q. Guo
  
• Effects of Al doping on the structural, electrical, and optical properties of rock-salt ZnCdO thin films grown by molecular beam epitaxy;　2022/04
  ANNOUNCEMENT INFO.;　Journal of Physics and Chemistry of Solids, 163, 110571
  AUTHOR;　H. Jang, K. Saito, Q. Guo, K.M. Yu, T. Tanaka
  
• Improved two-step photon absorption current by Cl-doping in ZnTeO-based intermediate band solar cells with n-ZnS layer;　2022/01
  ANNOUNCEMENT INFO.;　Solar Energy Materials and Solar Cells, 235, 111456
  AUTHOR;　T. Tanaka, S. Tsutsumi, K. Saito, Q. Guo, K.M. Yu
  
• Pulsed laser deposition growth of ultra-wide bandgap GeO2 film and its optical properties;　2021/11
  ANNOUNCEMENT INFO.;　Applied Physics Letters, 119, 18, 182101
  AUTHOR;　G. Deng, K. Saito, T. Tanaka, M. Arita, Q. Guo
  
• Creating terahertz pulses from titanium-doped lithium niobate-based strip waveguides with 1.55 μm light;　2021/09
  ANNOUNCEMENT INFO.;　Journal of Materials Science: Materials in Electronics, 32, 18, pp.23164 - 23173
  AUTHOR;　J.E. Muldera, J.P.C. Afalla , T. Furuya, H. Kitahara, E.S. Estacio, K. Saito, Q. Guo, M. Tani
  
• Strategy toward white LEDs based on vertically integrated rare earth doped Ga2O3 films;　2021/08
  ANNOUNCEMENT INFO.;　Applied Physics Letters, 119, 6, 062107
  AUTHOR;　Y. Huang, K. Saito, T. Tanaka, Q. Guo
  
• Low threshold voltage blue light emitting diodes based on thulium doped gallium oxides;　2021/08
  ANNOUNCEMENT INFO.;　Applied Physics Express, 14, 8, 081002
  AUTHOR;　Z. Chen, K. Saito, T. Tanaka, Q. Guo
  
• Yellow emission from vertically integrated Ga2O3 doped with Er and Eu electroluminescent film;　2021/07
  ANNOUNCEMENT INFO.;　Journal of Luminescence, 235, 118051
  AUTHOR;　Deng, G., Huang, Y., Chen, Z., Pan, C., Saito, K., Tanaka, T., Guo, Q.
  
• Structural, optical, and electrical properties of WZ- and RS-ZnCdO thin films on MgO (100) substrate by molecular beam epitaxy;　2021/06
  ANNOUNCEMENT INFO.;　Journal of Alloys and Compounds, 867, 159033
  AUTHOR;　Jang, H., Saito, K., Guo, Q., Yu, K.M., Walukiewicz, W., Tanaka, T.
  
• Low driven voltage green electroluminescent device based on Er:Ga2O3/GaAs heterojunction;　2021/06
  ANNOUNCEMENT INFO.;　Optical Materials, 116, 111078
  AUTHOR;　Deng, G., Saito, K., Tanaka, T., Guo, Q.
  
• Effect of Nitrogen Doping on Structural, Electrical, and Optical Properties of CuO Thin Films Synthesized by Radio Frequency Magnetron Sputtering for Photovoltaic Application;　2021/06
  ANNOUNCEMENT INFO.;　ECS Journal of Solid State Science and Technology, 10, 6, 065019
  AUTHOR;　M.A.M. Patwary, M. Ohishi, K. Saito, Q. Guo, K.M. Yu , T. Tanaka
  
• Low temperature growth of In2O3 films via pulsed laser deposition with oxygen plasma;　2021/05
  ANNOUNCEMENT INFO.;　Japanese Journal of Applied Physics, 60, 5, 055505
  AUTHOR;　Pan C.,Saito K.,Tanaka T.,Guo Q.
  
• Improvement of sensing sensitivity based on green emissions from Er-doped (AlGa)2O3 films;　2021/04
  ANNOUNCEMENT INFO.;　Journal of Luminescence, 232, 117879
  AUTHOR;　Deng, G., Saito, K., Tanaka, T., Guo, Q.
  
• Epitaxial growth of (AlxGa1-x)2O3 thin films on sapphire substrates by plasma assisted pulsed laser deposition;　2021/03
  ANNOUNCEMENT INFO.;　AIP Advances, 11, 3, 035319
  AUTHOR;　Chen, Z., Arita, M., Saito, K., Tanaka, T., Guo, Q.
  
• Realization of red electroluminescence from Ga2O3:Eu/Si based light-emitting diodes;　2021/02
  ANNOUNCEMENT INFO.;　Superlattices and Microstructures, 150, 106814
  AUTHOR;　Huang, Y., Saito, K., Tanaka, T., Guo, Q.
  
• Impacts of oxygen radical ambient on structural and optical properties of (AlGa)2O3 films deposited by pulsed laser deposition;　2020/06
  ANNOUNCEMENT INFO.;　AIP Advances, 10, 6, 065125
  AUTHOR;　F. Zhang, C. Hu, M. Arita, K. Saito, T. Tanaka, Q. Guo
  
• Enhanced green emission from Er-doped (AlGa)2O3 films grown by pulsed laser deposition;　2020/05
  ANNOUNCEMENT INFO.;　Japanese Journal of Applied Physics, 59, 5, 051007
  AUTHOR;　G. Deng, F. Zhang, K. Saito, T. Tanaka, M. Arita, Q. Guo
  
• Realization of rocksalt Zn1-xCdxO thin films with an optical band gap above 3.0 eV by molecular beam epitaxy;　2020/03
  ANNOUNCEMENT INFO.;　CrystEngComm, 22, 2781-2787
  AUTHOR;　H.C. Jang, K. Saito, Q. Guo, K.M. Yu, W. Walukiewicz, T. Tanaka
  
• Effect of oxygen flow rate on properties of Cu4O3 thin films fabricated by radio frequency magnetron sputtering;　2020/02
  ANNOUNCEMENT INFO.;　Journal of Applied Physics, 127, 8, 85302
  AUTHOR;　Patwary, M.A.M., Ho, C.Y., Saito, K., Guo, Q., Yu, K.M., Walukiewicz, W., Tanaka, T.
  
• Conductive transparent (InGa)2O3 film as host for rare earth Eu;　2020/02
  ANNOUNCEMENT INFO.;　AIP Advances, 10, 2, 25024
  AUTHOR;　Zhang, F., Saito, K., Tanaka, T., Wang, X., Guo, Q.
  
• Nitrogen Doping Effect in Cu4O3 Thin Films Fabricated by Radio Frequency Magnetron Sputtering;　2020/02
  ANNOUNCEMENT INFO.;　Physica Status Solidi (B) Basic Research, 257, 2, 1900363
  AUTHOR;　M.A.M. Patwary, K. Saito, Q. Guo, T. Tanaka, K. Man Yu, W. Walukiewicz
  
• Low temperature growth of (AlGa)2O3 films by oxygen radical assisted pulsed laser deposition;　2020/01
  ANNOUNCEMENT INFO.;　CrystEngComm, 22, 1, 142-146
  AUTHOR;　Zhang, F., Hu, C., Arita, M., Saito, K., Tanaka, T., Guo, Q.
  
• Growth of low resistive Al-doped ZnCdO thin films with rocksalt structure for transparent conductive oxide thin films;　2020/00
  ANNOUNCEMENT INFO.;　Conference Record of the IEEE Photovoltaic Specialists Conference, 2020-June, 9300563, pp.191-193
  AUTHOR;　Jang, H., Saito, K., Guo, Q., Tanaka, T., Yu, K.M., Walukiewicz, W.
  
• Efficient temperature sensor based on green emissions from Er-doped β-Ga2O3 thin film;　2020/00
  ANNOUNCEMENT INFO.;　AIP Advances, 10, 10, 105227
  AUTHOR;　Deng, G., Saito, K., Tanaka, T., Guo, Q.
  
• Nitrogen Doping Effect in Cu4O3 Thin Films Fabricated by Radio Frequency Magnetron Sputtering;　2019/09
  ANNOUNCEMENT INFO.;　Physica Status Solidi (B) Basic Research, 257, 2, 1900363
  AUTHOR;　Patwary, M.A.M., Saito, K., Guo, Q., Tanaka, T., Man Yu, K., Walukiewicz, W.
  
• Low temperature growth of Ga2O3 films on sapphire substrates by plasma assisted pulsed laser deposition;　2019/08
  ANNOUNCEMENT INFO.;　AIP Advances, 9, 8, 85022
  AUTHOR;　Hu, C., Zhang, F., Saito, K., Tanaka, T., Guo, Q.
  
• Cl-doping effect in ZnTe1-xOx highly mismatched alloys for intermediate band solar cells;　2019/06
  ANNOUNCEMENT INFO.;　Journal of Applied Physics, 125, 24, 243109
  AUTHOR;　Tanaka, T., Matsuo, K., Saito, K., Guo, Q., Tayagaki, T., Yu, K.M., Walukiewicz, W.
  
• Oxygen Concentration Dependence of Photovoltaic Properties of Intermediate Band Solar Cells based on Cl-doped ZnTeO;　2019/06
  ANNOUNCEMENT INFO.;　Conference Record of the IEEE Photovoltaic Specialists Conference, 8981313, 1793-1796
  AUTHOR;　Tanaka, T., Izumi, T., Matsuo, K., Saito, K., Guo, Q., Yu, K.M., Walukiewicz, W.
  
• Three-dimensional band structure and surface electron accumulation of rs-CdxZn1−xO studied by angle-resolved photoemission spectroscopy;　2019/05
  ANNOUNCEMENT INFO.;　Scientific Reports, 9, 1, 8026
  AUTHOR;　Takahashi, K., Imamura, M., Chang, J.H., Tanaka, T., Saito, K., Guo, Q., Yu, K.M., Walukiewicz, W.
  
• Influence of oxygen flow rate and substrate positions on properties of Cu-oxide thin films fabricated by radio frequency magnetron sputtering using pure Cu target;　2019/04
  ANNOUNCEMENT INFO.;　Thin Solid Films, 675, 59-65
  AUTHOR;　Patwary, M.A.M., Saito, K., Guo, Q., Tanaka, T.
  
• Crystal and electronic structural changes during annealing in severely deformed Si containing metastable phases formed by high-pressure torsion;　2018/09
  ANNOUNCEMENT INFO.;　Applied Physics Letters, 113, 10, 101904
  AUTHOR;　Ikoma, Y., Chon, B., Yamasaki, T., Takahashi, K., Saito, K., Guo, Q., Horita, Z.
  
• Improved photovoltaic properties of ZnTeO-based intermediate band solar cells;　2018/04
  ANNOUNCEMENT INFO.;　Proceedings of SPIE - The International Society for Optical Engineering, 10527, 105270P
  AUTHOR;　Tanaka, T., Saito, K., Guo, Q., Yu, K.M., Walukiewicz, W.
  
• Local Bi-O bonds correlated with infrared emission properties in triply doped Gd2.95Yb0.02Bi0.02Er0.01Ga5O12via temperature-dependent Raman spectra and x-ray absorption fine structure analysis;　2018/02
  ANNOUNCEMENT INFO.;　Journal of Physics Condensed Matter, 30, 12, 125901
  AUTHOR;　Tong, L., Saito, K., Guo, Q., Zhou, H., Guo, X., Fan, T., Zhang, D.
  
• Photoluminescence of ZnTe/ZnMgTe multiple quantum well structures grown on ZnTe substrates by molecular beam epitaxy;　2018/02
  ANNOUNCEMENT INFO.;　Superlattices and Microstructures, 114, 192-199
  AUTHOR;　Tanaka, T., Ohshita, H., Saito, K., Guo, Q.
  
• Ultraviolet emission from MgZnO films and ZnO/MgZnO single quantum wells grown by pulsed laser deposition;　2018/02
  ANNOUNCEMENT INFO.;　Journal of Crystal Growth, 483, 39-43
  AUTHOR;　Wang, X., Chen, Z., Hu, C., Saito, K., Tanaka, T., Nishio, M., Guo, Q.
  
• The impact of dopant contents on structures, morphologies and optical properties of Eu doped Ga2O3films on GaAs substrate;　2018/02
  ANNOUNCEMENT INFO.;　Journal of Luminescence, 194, 374-378
  AUTHOR;　Chen, Z., Nishihagi, K., Wang, X., Hu, C., Arita, M., Saito, K., Tanaka, T., Guo, Q.
  
• Regulation mechanism of bottleneck size on Li+ migration activation energy in garnet-type Li7La3Zr2O12;　2018/01
  ANNOUNCEMENT INFO.;　
  AUTHOR;　Yanhua Zhang, Fei Chen, Junyang Li, Lianmeng Zhang, Jiajun Gu, Di Zhang, Katsuhiko Saito, Qixin Guo, Ping Luo, Shijie Dong
  
• Defect induced visible-light-activated near-infrared emissions in Gd3-x-Y-zYbxBiyErzGa5O12;　2017/11
  ANNOUNCEMENT INFO.;　Journal of Applied Physics, 122, 17, 173103
  AUTHOR;　Tong, L., Saito, K., Guo, Q., Zhou, H., Fan, T., Zhang, D.
  
• Characteristics of thulium doped gallium oxide films grown by pulsed laser deposition;　2017/10
  ANNOUNCEMENT INFO.;　Thin Solid Films, 639, 123-126
  AUTHOR;　Guo, Q., Nishihagi, K., Chen, Z., Saito, K., Tanaka, T.
  
• Temperature-dependent raman scattering in cubic (InGa)2O3 thin films;　2017/01
  ANNOUNCEMENT INFO.;　Journal of Alloys and Compounds, 690, 287-292
  AUTHOR;　Xu Wang, Zhengwei Chen, Katsuhiko Saito, Tooru Tanaka, Mitsuhiro Nishio, Qixin Guo
  
• Phase transformation of germanium by processing through high-pressure torsion: strain and temperature effects;　2017/01
  ANNOUNCEMENT INFO.;　Philosophical Magazine Letters, 97, 1, 27-34
  AUTHOR;　Yoshifumi Ikoma, Kazuki Kumano, Kaveh Edalati, Katsuhiko Saito, Qixin Guo, Zenji Horita
  
• Structural properties of Eu doped gallium oxide films;　2017
  ANNOUNCEMENT INFO.;　Materials Research Bulletin, 94, 170-173
  AUTHOR;　K. Nishihagi, Z. Chen, K. Saito, T. Tanaka, Q. Guo
  
• Growth and characterization of Zn1-xCdxTe1-yOy highly mismatched alloys for intermediate band solar cells;　2017
  ANNOUNCEMENT INFO.;　Solar Energy Materials and Solar Cells, 169, 1-7
  AUTHOR;　T. Tanaka, T. Terasawa, Y. Okano, S. Tsutsumi, K. Saito, Q. Guo, M. Nishio, K.M. Yu, W. Walukiewicz
  
• Growth of ZnMgSeTe nearly lattice-matched to ZnTe and p-type doping by low-pressure MOVPE;　2017
  ANNOUNCEMENT INFO.;　Journal of Crystal Growth, 468, 671-675
  AUTHOR;　Saito, K., Nishio, M., Nakatsuru, Y., Shono, T., Matsuo, Y., Tomota, A., Tanaka, T., Guo, Q.X.
  
• Photoluminescence and electrical properties of P-doped ZnTe layers grown by low pressure MOVPE;　2017
  ANNOUNCEMENT INFO.;　Journal of Crystal Growth, 468, 666-670
  AUTHOR;　Nishio, M., Saito, K., Nakatsuru, Y., Shono, T., Matsuo, Y., Tomota, A., Tanaka, T., Guo, Q.X.
  
• Improved Open-Circuit Voltage and Photovoltaic Properties of ZnTeO-Based Intermediate Band Solar Cells With n-Type ZnS Layers;　2017
  ANNOUNCEMENT INFO.;　IEEE Journal of Photovoltaics, 7, 4, 7935367, 1024-1030
  AUTHOR;　Tanaka, T., Yu, K.M., Okano, Y., Tsutsumi, S., Haraguchi, S., Saito, K., Guo, Q., Nishio, M., Walukiewicz, W.
  
• Efficient pure green emission from Er-doped Ga2O3 films;　2017
  ANNOUNCEMENT INFO.;　CrystEngComm, 19, 31, 4448-4458
  AUTHOR;　Chen, Z., Saito, K., Tanaka, T., Guo, Q.
  
• Characterization of p-ZnTe/n-ZnO heterojunction interface prepared by direct bonding technology;　2016/09
  ANNOUNCEMENT INFO.;　IEEJ Transactions on Electronics, Information and Systems, 136, 12, 1761-1766
  AUTHOR;　H. Akiyama, J. Utsumi, T. Tanaka, K. Saito, M. Nishio, Q. Guo
  
• Toward controlling the carrier density of Si doped Ga2O3 films by pulsed laser deposition;　2016/09
  ANNOUNCEMENT INFO.;　Applied Physics Letters, 109, 10, 102105
  AUTHOR;　Fabi Zhang , Makoto Arita , Xu Wang , Zhengwei Chen , Katsuhiko Saito , Tooru Tanaka , Mitsuhiro Nishio , Teruaki Motooka , Qixin Guo
  
• Band alignment of Ga2O3/Si heterojunction interface measured by X-ray photoelectron spectroscopy;　2016/09
  ANNOUNCEMENT INFO.;　Applied Physics Letters, 109, 10, 102106
  AUTHOR;　Zhengwei Chen, Kazuo Nishihagi , Xu Wang , Katsuhiko Saito , Tooru Tanaka , Mitsuhiro Nishio , Makoto Arita , Qixin Guo
  
• Observation of low voltage driven green emission from erbium doped Ga2O3 light-emitting devices;　2016/08
  ANNOUNCEMENT INFO.;　Applied Physics Letters, 109, 2, 022107
  AUTHOR;　Zhengwei Chen, Xu Wang , Fabi Zhang , Shinji Noda , Katsuhiko Saito , Tooru Tanaka , Mitsuhiro Nishio , Makoto Arita , Qixin Guo
  
• Highly transparent conductive Ga doped ZnO films in the near-infrared wavelength range;　2016/07
  ANNOUNCEMENT INFO.;　Journal of Materials Science: Materials in Electronic, 27, 9, 9291-9296
  AUTHOR;　Zhengwei Chen, Katsuhiko Saito, Tooru Tanaka, Mitsuhiro Nishio, Qixin Guo
  
• Influence of substrate temperature on the properties of (AlGa)2O3 thin films prepared by pulsed laser deposition;　2016/06
  ANNOUNCEMENT INFO.;　Ceramics International, 42, 11, 12783-12788
  AUTHOR;　Xu Wang, Zhengwei Chen, Fabi Zhang, Katsuhiko Saito, Tooru Tanaka, Mitsuhiro Nishio, Qixin Guo
  
• Temperature dependence of luminescence spectra in europium doped Ga2O3 film;　2016/04
  ANNOUNCEMENT INFO.;　Journal of Luminescence, 177, 48-53
  AUTHOR;　Zhengwei Chen, Xu Wang, Fabi Zhang, Shinji Noda, Katsuhiko Saito, Tooru Tanaka, Mitsuhiro Nishio, Qixin Guo
  
• Effects of dopant contents on structural, morphological and optical properties of Er doped Ga2O3 films;　2016/02
  ANNOUNCEMENT INFO.;　Superlattices and Microstructures, 90, 207-214
  AUTHOR;　Z. Chen, X. Wang, S. Noda, K. Saito, T. Tanaka, M. Nishio, M. Arita, Q. Guo
  
• Influence of source transport rate upon fractions of Mg and Se in Zn1-xMgxSeyTe1-y Layers grown by metalorganic vapor phase epitaxy;　2016
  ANNOUNCEMENT INFO.;　Physica Status Solidi (C) Current Topics in Solid State Physics, 13, 443-447
  AUTHOR;　K. Saito, M. Abiru, E. Mori, Y. Araki, D. Tanaka, T. Tanaka, Q. Guo, and M. Nishio
  
• Low Pressure MOVPE Growth and Characterization of ZnTe Homoepitaxial Layers;　2016
  ANNOUNCEMENT INFO.;　Physica Status Solidi (C) Current Topics in Solid State Physics, 13, 439-442
  AUTHOR;　M. Nishio, K. Saito, M. Abiru, E. Mori, Y. Araki, D. Tanaka, T. Tanaka, and Q. Guo
  
• The impact of growth temperature on the structural and optical properties of catalyst-Free β-Ga2O3 nanostructures;　2016
  ANNOUNCEMENT INFO.;　Materials Research Express, 3, 2, 25003
  AUTHOR;　Chen, Z., Wang, X., Saito, K., Tanaka, T., Nishio, M., Guo, Q.
  
• Effects of dopant contents on structural, morphological and optical properties of Er doped Ga2O3 films;　2016
  ANNOUNCEMENT INFO.;　Superlattices and Microstructures, 90, 207-214
  AUTHOR;　Chen, Z., Wang, X., Noda, S., Saito, K., Tanaka, T., Nishio, M., Arita, M., Guo, Q.
  
• Compositional dependence of optical transition energies in highly mismatched Zn1-xCdxTe1-yOy alloys;　2016
  ANNOUNCEMENT INFO.;　Applied Physics Express, 9, 2, 21202
  AUTHOR;　Tanaka, T., Mizoguchi, K., Terasawa, T., Okano, Y., Saito, K., Guo, Q., Nishio, M., Yu, K.M., Walukiewicz, W.
  
• Temperature dependence of Raman scattering in β -(AlGa)2O3 thin films;　2016
  ANNOUNCEMENT INFO.;　AIP Advances, 6, 1, 15111
  AUTHOR;　Wang, X., Chen, Z., Zhang, F., Saito, K., Tanaka, T., Nishio, M., Guo, Q.
  
• Cl-doping in highly mismatched ZnTe1-xOx alloys for intermediate band solar cells;　2016
  ANNOUNCEMENT INFO.;　Conference Record of the IEEE Photovoltaic Specialists Conference, 2016-November, 2830-2832
  AUTHOR;　Tanaka, T., Tsutsumi, S., Okano, Y., Saito, K., Guo, Q., Nishio, M., Yu, K.M., Walukiewicz, W.
  
• Compositions of Mg and Se, surface morphology, roughness and Raman property of Zn1-xMgxSeyTe1-y layers grown at various substrate temperatures or dopant transport rates by MOVPE;　2015
  ANNOUNCEMENT INFO.;　Journal of Crystal Growth, 414, 114-118
  AUTHOR;　M. Nishio, K. Saito, K. Urata, Y. Okamoto, D. Tanaka, Y. Araki, M. Abiru, E. Mori, T. Tanaka, Q. Guo
  
• Lower temperature growth of single phase MgZnO films in all Mg content range;　2015
  ANNOUNCEMENT INFO.;　Journal of Alloys and Compounds, 627, 383-387
  AUTHOR;　X. Wang, K. Saito, T. Tanaka, M. Nishio, Q. Guo
  
• Electrical properties of Si doped Ga2O3 films grown by pulsed laser deposition;　2015
  ANNOUNCEMENT INFO.;　Journal of Materials Science: Materials in Electronics, 26, 12, 9624-9629
  AUTHOR;　Zhang, F., Saito, K., Tanaka, T., Nishio, M., Guo, Q.
  
• Low temperature growth of europium doped Ga2O3 luminescent films;　2015
  ANNOUNCEMENT INFO.;　Journal of Crystal Growth, 430, 28-33
  AUTHOR;　Chen, Z., Saito, K., Tanaka, T., Nishio, M., Arita, M., Guo, Q.
  
• Allotropic phase transformation and photoluminescence of germanium nanograins processed by high-pressure torsion;　2015
  ANNOUNCEMENT INFO.;　Journal of Materials Science, 51, 1, 138-143
  AUTHOR;　Ikoma, Y., Toyota, T., Ejiri, Y., Saito, K., Guo, Q., Horita, Z.
  
• Energy band bowing parameter in MgZnO alloys;　2015
  ANNOUNCEMENT INFO.;　Applied Physics Letters, 107, 2, 22111
  AUTHOR;　Wang, X., Saito, K., Tanaka, T., Nishio, M., Nagaoka, T., Arita, M., Guo, Q.
  
• Toward the understanding of annealing effects on (GaIn)2O3 films;　2015
  ANNOUNCEMENT INFO.;　Thin Solid Films, 578, 1-6
  AUTHOR;　Zhang, F., Jan, H., Saito, K., Tanaka, T., Nishio, M., Nagaoka, T., Arita, M., Guo, Q.
  
• Structural and optical properties of Ga2O3 films on sapphire substrates by pulsed laser deposition;　2014
  ANNOUNCEMENT INFO.;　Journal of Crystal Growth, 387, 96-100
  AUTHOR;　F.B. Zhang, K. Saito, T. Tanaka, M. Nishio, Q.X. Guo
  
• Growth of InGaN layers on (1 1 1) silicon substrates by reactive sputtering;　2014
  ANNOUNCEMENT INFO.;　Journal of Alloys and Compounds, 587, 217-221
  AUTHOR;　Q. Guo, T. Nakao, T. Ushijima, W. Shi, F. Liu, K. Saito, T. Tanaka, M. Nishio
  
• Photogenerated Current By Two-Step Photon Excitation in ZnTeO Intermediate Band Solar Cells with n-ZnO Window Layer;　2014
  ANNOUNCEMENT INFO.;　IEEE Journal of Photovoltaics, 4, 1, 196-201
  AUTHOR;　T. Tanaka, M. Miyabara, Y. Nagao, K. Saito, Q. Guo, M. Nishio, K.M. Yu, W. Walukiewicz
  
• Fabrication of ZnO/ZnTe heterojunction by using a Room Temperature Direct Bonding technology;　2014
  ANNOUNCEMENT INFO.;　Physica Status Solidi (C) Current Topics in Solid State Physics, 11, 1218-1220
  AUTHOR;　H. Akiyama, K. Saito, T. Tanaka, M. Nishio, Q. Guo
  
• The effect of substrate temperature upon the compositions of Mg and Se in Zn1-xMgxSeyTe1-y layer grown by MOVPE;　2014
  ANNOUNCEMENT INFO.;　Physica Status Solidi (C) Current Topics in Solid State Physics, 11, 1202-1205
  AUTHOR;　M. Nishio, K. Saito, R. Ito, K. Tanaka, K. Urata, Y. Nakamura, T. Tanaka, Q.X. Guo
  
• Wide bandgap engineering of (GaIn)2O3 films;　2014
  ANNOUNCEMENT INFO.;　Solid State Communications, 186, 28-31
  AUTHOR;　Fabi Zhang, Katsuhiko Saito, Tooru Tanaka, Mitsuhiro Nishio, and Qixin Guo
  
• Fabrication of Nanograined Silicon by High-Pressure Torsion;　2014
  ANNOUNCEMENT INFO.;　Journal of Materials Science, 49, 19, 6565-6569
  AUTHOR;　Y. Ikoma, K. Hayano, K. Edalati, K. Saito, Q. Guo, Z. Horita, T. Aoki, D.J. Smith
  
• Electrical properties and emission mechanisms of Zn-doped β-Ga 2O3 films;　2014
  ANNOUNCEMENT INFO.;　Journal of Physics and Chemistry of Solids, 75, 11, 1201-1204
  AUTHOR;　X.H. Wang, F.B. Zhang, K. Saito, T. Tanaka, M. Nishio, Q.X. Guo
  
• Wide bandgap engineering of (AlGa)2O3 films;　2014
  ANNOUNCEMENT INFO.;　Applied Physics Letters, 105, 16, 162107
  AUTHOR;　F. Zhang, K. Saito, T. Tanaka, M. Nishio, M. Arita, Q. Guo
  
• Thermal Annealing Impact on Crystal Quality of (GaIn)2O3 Alloys;　2014
  ANNOUNCEMENT INFO.;　Journal of Alloys and Compounds, 614, 173-176
  AUTHOR;　F. Zhang, K. Saito, T. Tanaka, M. Nishio, Q. Guo
  
• Surface morphologies and photoluminescence properties of undoped and P-doped ZnTe layers grown by metalorganic vapor phase epitaxy;　2013
  ANNOUNCEMENT INFO.;　Journal of Crystal Growth, 370, 1, 348-352
  AUTHOR;　M. Nishio, Y. Hayashida, K. Saito, T. Tanaka, Q. Guo
  
• Effects of annealing treatment upon electrical and photoluminescence properties of phosphorus-doped ZnMgTe epilayers grown by metalorganic vapor phase epitaxy;　2013
  ANNOUNCEMENT INFO.;　Journal of Crystal Growth, 370, 1, 342-347
  AUTHOR;　M. Nishio, K. Kai, R. Fujiki, K. Saito, T. Tanaka, and Q. Guo
  
• Photocurrent induced by two-photon excitation in ZnTeO intermediate band solar cells;　2013
  ANNOUNCEMENT INFO.;　Applied Physics Letters, 102, 5, 052111
  AUTHOR;　T. Tanaka, M. Miyabara, Y. Nagao, K. Saito, Q. Guo, M. Nishio, K.M. Yu, W. Walukiewicz
  
• Effects of oxygen gas pressure on properties of iron oxide films grown by pulsed laser deposition;　2013
  ANNOUNCEMENT INFO.;　Journal of Alloys and Compounds, 552, 1-5
  AUTHOR;　Q. Guo, W. Shi, F. Liu, M. Arita, Y. Ikoma, K. Saito, T. Tanaka,and M. Nishio
  
• Band alignment of ZnTe/GaAs heterointerface investigated by synchrotron radiation photoemission spectroscopy;　2013
  ANNOUNCEMENT INFO.;　Applied Physics Letters, 102, 9, 092107
  AUTHOR;　Q. Guo, K. Takahashi, K. Saito, H. Akiyama, T. Tanaka, and M. Nishio
  
• Epitaxial Growth of ZnTe Layers on ZnO Bulk Substrates by Metalorganic Vapor Phase Epitaxy;　2013
  ANNOUNCEMENT INFO.;　Japanese Journal of Applied Physics, 52, 040206
  AUTHOR;　H. Akiyama, H. Hirano, K. Saito, T. Tanaka, M. Nishio, and Q. Guo
  
• Development of ZnTe-Based Solar Cells;　2013
  ANNOUNCEMENT INFO.;　Materials Science Forum, 750, 80-83
  AUTHOR;　T. Tanaka, M. Miyabara, K. Saito, Q. Guo, M. Nishio, K.M. Yu, and W. Walukiewicz
  
• Molecular beam epitaxial growth of ZnCdTeO epilayers for intermediate band solar cells;　2013
  ANNOUNCEMENT INFO.;　Journal of Crystal Growth, 378, 259-262
  AUTHOR;　T. Tanaka, Y. Nagao, T. Mochinaga, K. Saito, Q. Guo, M. Nishio, K.M. Yu, W. Walukiewicz
  
• Nanograin formation of GaAs by high-pressure torsion;　2013
  ANNOUNCEMENT INFO.;　Philosophical Magazine Letters, in press
  AUTHOR;　Y. Ikoma, Y. Ejiri, K. Hayano, K. Saito, Q. Guo, Z. Horita
  
• Development of ZnTe-based solar cells;　2013
  ANNOUNCEMENT INFO.;　Materials Science Forum, 750, 80-83
  AUTHOR;　Tooru Tanaka, Masaki Miyabara, Katsuhiko Saito, Qixin Guo, Mitsuhiro Nishio, Kin M. Yu, and Wladek Walukiewicz
  
• Growth of ZnTe layers on (111) GaAs substrates by metalorganic vapor phase epitaxy;　2012
  ANNOUNCEMENT INFO.;　Journal of Crystal Growth, 341, 1, 7-11
  AUTHOR;　Q. Guo, H. Akiyama, Y. Mikuriya, K. Saito, T. Tanaka, and M. Nishio
  
• Epitaxial growth of ZnO layers on (111) GaAs substrates by laser molecular beam epitaxy;　2012
  ANNOUNCEMENT INFO.;　Thin Solid Films, 520, 7, 2663-2666
  AUTHOR;　J. Ding, D. Zhang, T. Konomi, K. Saito, and Q. Guo
  
• Effects of substrate temperature upon the properties of ZnMgTe layer grown by MOVPE;　2012
  ANNOUNCEMENT INFO.;　Applied Surface Science, 258, 6, 2137-2140
  AUTHOR;　K. Saito, Y. Inoue, Y. Hayashida, T. Tanaka, Q. X. Guo, and M. Nishio
  
• Molecular beam epitaxial growth and optical properties of highly mismatched ZnTe 1-xO x alloys;　2012
  ANNOUNCEMENT INFO.;　Applied Physics Letters, 100, 1, 011905
  AUTHOR;　T. Tanaka, S. Kusaba, T. Mochinaga, K. Saito, Q. Guo, M. Nishio, K. M. Yu, and W. Walukiewicz
  
• Existence and removal of Cu2Se second phase in coevaporated Cu2ZnSnSe4 thin films;　2012
  ANNOUNCEMENT INFO.;　Journal of Applied Physics, 111, 5, 053522
  AUTHOR;　T. Tanaka, T. Sueishi, K. Saito, Q. Guo, M. Nishio, K. M. Yu, and W. Walukiewicz
  
• Characterization of epitaxial ZnTe layers grown on GaAs substrates by transmission electron microscopy and photoluminescence;　2012
  ANNOUNCEMENT INFO.;　Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 30, 2, 021508
  AUTHOR;　F. Zhang, Y. Ikoma, J. Zhang, K. Xu, K. Saito, and Q. Guo
  
• Influence of source transport rate upon phosphorus doping of ZnTe layers grown by MOVPE method;　2012
  ANNOUNCEMENT INFO.;　Physica Status Solidi (C) Current Topics in Solid State Physics, 9, 8-9, 1732-1735
  AUTHOR;　M. Nishio, X. Han, K. Saito, T. Tanaka, and Q. X.Guo
  
• Influence of dopant transport rate upon photoluminescence and electrical properties of phosphorus-doped ZnMgTe layers grown by MOVPE;　2012
  ANNOUNCEMENT INFO.;　Physica Status Solidi (C) Current Topics in Solid State Physics, 9, 8-9, 1736-1739
  AUTHOR;　K. Saito, T. Saeki, T. Tanaka, Q.X. Guo, and M. Nishio
  
• Phase transformation and nanograin refinement of silicon by processing through high-pressure torsion;　2012
  ANNOUNCEMENT INFO.;　Applied Physics Letters, 101, 12, 121908
  AUTHOR;　Y. Ikoma, K. Hayano, K. Edalati, K. Saito, Q. Guo, and Z. Horita
  
• Impact of radio frequency powers on GaInN film growth by magnetron reactive sputtering;　2012
  ANNOUNCEMENT INFO.;　Japanese Journal of Applied Physics, 51, 11, 118004
  AUTHOR;　Q. Guo, W. Shi, F. Liu, T. Nakao, K. Saito, T. Tanaka, and M. Nishio
  
• Growth and characterization of Fe3O4 films;　2011
  ANNOUNCEMENT INFO.;　Materials Research Bulletin, 46, 12, 2212-2216
  AUTHOR;　J. Ding, D. Zhang, M. Arita, Y. Ikoma, K. Nakamura, K. Saito, and Q. Guo
  
• Effect of VI/II ratio upon photoluminescence and electrical properties of phosphorus-doped ZnTe films grown by metalorganic vapor phase epitaxy;　2011
  ANNOUNCEMENT INFO.;　Thin Solid Films, 520, 2, 743-746
  AUTHOR;　M. Nishio, K. Kai, K. Saito, T. Tanaka, and Q. Guo
  
• Electronic structure of GaInN semiconductors investigated by x-ray absorption spectroscopy;　2011
  ANNOUNCEMENT INFO.;　Applied Physics Letters, 98, 18, 181901
  AUTHOR;　Q. X. Guo, H. Senda, K. Saito, T. Tanaka, M. Nishio, J. Ding, T. X. Fan, D. Zhang, X. Q. Wang, S. T. Liu, B. Shen, and R. Ohtani
  
• Structural and optical properties of porous iron oxide;　2011
  ANNOUNCEMENT INFO.;　Solid State Communications, 151, 10, 802-805
  AUTHOR;　J. Ding, T. Fan, D. Zhang, K. Saito, and Q. Guo
  
• Effect of gas flow rate on surface morphology and crystal quality of ZnTe epilayers grown on GaAs substrates;　2011
  ANNOUNCEMENT INFO.;　Materials Research Bulletin, 46, 4, 551-554
  AUTHOR;　Q. Guo, M. Nada, Y. Ding, K. Saito, T. Tanaka,and M. Nishio
  
• Estimation of donor and acceptor levels in Al-doped ZnTe layers from photoluminescence measurement;　2011
  ANNOUNCEMENT INFO.;　Proceedings of SPIE - The International Society for Optical Engineering, 7995, 79950I
  AUTHOR;　K. Saito, T. Saeki, X. Han, T. Tanaka, Q. Guo, and M. Nishio
  
• Temperature dependence of electrical properties for P-doped ZnMgTe bulk crystals of high quality grown by Bridgman method;　2011
  ANNOUNCEMENT INFO.;　Journal of Crystal Growth, 318, 1, 524-527
  AUTHOR;　M. Nishio, K. Hiwatashi, K. Saito, T. Tanaka, and Q. Guo
  
• Temperature dependence of photoluminescence from P-doped ZnMgTe bulk crystals of high quality grown by Bridgman method;　2010
  ANNOUNCEMENT INFO.;　Physica Status Solidi (C) Current Topics in Solid State Physics, 7, 6, 1495-1497
  AUTHOR;　K. Saito, S. Shimao, T. Tanaka, Q. Guo, and M. Nishio
  
• Influence of composition ratio on properties of Cu2ZnSnS 4 thin films fabricated by co-evaporation;　2010
  ANNOUNCEMENT INFO.;　Thin Solid Films, 518, 21 SUPPL., S29-S33
  AUTHOR;　T. Tanaka, A. Yoshida, D. Saiki, K. Saito, Q. Guo, M. Nishio, and T. Yamaguchi
  
• Post-annealing effect upon electrical and optical properties of MOVPE grown P-doped ZnTe homoepitaxial layers;　2009/01
  ANNOUNCEMENT INFO.;　Journal of Materials Science: Materials in Electronics, 20, Supplement 1, 264-267
  AUTHOR;　K. Saito, K. Yamaguchi, T. Tanaka, M. Nishio, Q. Guo, and H. Ogawa
  
• Fabrication of a ZnTe light emitting diode by Al thermal diffusion into a p -ZnTe epitaxial layer on a p -ZnMgTe substrate;　2009
  ANNOUNCEMENT INFO.;　Journal of Materials Science: Materials in Electronics, 20, Supplement 1, 505-509
  AUTHOR;　T. Tanaka, K. Saito, M. Nishio, Q. Guo, and H. Ogawa
  
• Enhanced Light Output from ZnTe Light Emitting Diodes by Utilizing Thin Film Structure;　2009
  ANNOUNCEMENT INFO.;　Applied Physics Express, 2, 122101
  AUTHOR;　T. Tanaka, K. Saito, M. Nishio, Q. Guo, and H. Ogawa
  
• Improvement of MOVPE grown ZnTe:P layers by annealing treatment;　2008
  ANNOUNCEMENT INFO.;　Journal of Physics: Conference Series, 100, 042019
  AUTHOR;　K. Saito, K. Fujimoto, K. Yamaguchi, T. Tanaka, M. Nishio, Q.X. Guo, and H. Ogawa
  
• Epitaxial growth of ZnMgTe with a wide composition range on ZnTe substrate by molecular beam epitaxy;　2008
  ANNOUNCEMENT INFO.;　Journal of Physics: Conference Series, 100, 042018
  AUTHOR;　T. Tanaka, K. Saito, M. Nishio, Q. Guo, and H. Ogawa
  
• Growth of undoped ZnMgTe layers by metalorganic vapour phase epitaxy;　2008
  ANNOUNCEMENT INFO.;　Journal of Physics: Conference Series, 100, 042028
  AUTHOR;　K. Saito, D. Kouno, T. Tanaka, M. Nishio, Q.X. Guo, and H Ogawa
  
• Surface morphology of (100) ZnTe: P layer homoepitaxially grown by horizontal MOVPE technique;　2008
  ANNOUNCEMENT INFO.;　Proceedings of SPIE, 6984, 69840M
  AUTHOR;　K. Yamaguchi, Y. Kuramitsu, K. Saito, T. Tanaka, M. Nishio, Q. Guo, and H. Ogawa
  
• Multilayer polarization elements and their applications to polarimetric studies in vacuum ultraviolet and soft X-ray regions;　2008
  ANNOUNCEMENT INFO.;　Nuclear Science and Techniques, 19, 4, 193-203
  AUTHOR;　M. Watanabe, T. Hatano, K. Saito, W. Hu, T. Ejima, T. Tsuru, M. Takahashi, H. Kimura, T. Hirono, Z. Wang, M. Cui, M. Yamamoto, and M. Yanagihara
  
• Growth characteristics of ZnMgTe layer on ZnTe substrate by metalorganic vapor phase epitaxy;　2007
  ANNOUNCEMENT INFO.;　Journal of Crystal Growth, 298, 449-452
  AUTHOR;　K. Saito, T. Yamashita, D. Kouno, T. Tanaka, M. Nishio, Q. Guo, and H. Ogawa
  
• Study of Al thermal diffusion in ZnTe using secondary ion mass spectroscopy;　2007
  ANNOUNCEMENT INFO.;　physica status solidi (b), 244, 5, 1634-1638
  AUTHOR;　T. Tanaka, N. Murata, K. Saito, M. Nishio, Q. Guo, and H. Ogawa
  
• Post-annealing effect upon phosphorus-doped ZnTe homoepitaxial layers grown by MOVPE;　2007
  ANNOUNCEMENT INFO.;　physica status solidi (b), 244, 5, 1634-1638
  AUTHOR;　K. Saito, K. Fujimoto, K. Yamaguchi, T. Tanaka, M. Nishio, Q. Guo, and H. Ogawa
  
• Effect of surface treatment on properties of ZnTe LED fabricated by Al thermal diffusion;　2006
  ANNOUNCEMENT INFO.;　physica status solidi (b), 243, 4, 959-962
  AUTHOR;　T. Tanaka, K. Hayashida, K. Saito, M. Nishio, Q. Guo, and H. Ogawa
  
• Phosphorus-doped ZnMgTe bulk crystals grown by Vertical Bridgman Method;　2006
  ANNOUNCEMENT INFO.;　physica status solidi (b), 3, 4, 812-816
  AUTHOR;　K. Saito, K. Kinoshita, T. Tanaka, M. Nishio, Q. Guo, and H. Ogawa
  
• Growth of boron-doped ZnTe homoepitaxial layer by metalorganic vapor phase epitaxy;　2006
  ANNOUNCEMENT INFO.;　physica status solidi (c), 3, 4, 833-836
  AUTHOR;　K. Saito, T. Yamashita, T. Tanaka, M. Nishio,Q. Guo, and H. Ogawa
  
• Optical and Electrical Properties of Phosphorus-Doped ZnMgTe Bulk Crystals Grown by Bridgman Method;　2006
  ANNOUNCEMENT INFO.;　physica status solidi (c), 3, 8, 2673-2676
  AUTHOR;　K. Saito, G. So, T. Tanaka, M. Nishio, Q. Guo, and H. Ogawa
  
• Synchrotron radiation-excited etching of ZnTe using Ar gas;　2005/08
  ANNOUNCEMENT INFO.;　Nuclear Instruments and Methods in Physics Research Section B, 238, 1-4, 115-118
  AUTHOR;　T. Tanaka, Y. Kume, K. Hayashida, K. Saito, M. Nishio, Q. Guo, and H. Ogawa
  
• Magnetic rotation spectra of Co/Pt and Co/Cu multilayers in 50-90 eV region;　2005
  ANNOUNCEMENT INFO.;　Journal of Electron Spectroscopy and Related Phenomena, 144-147, 757-760
  AUTHOR;　K. Saito, M. Igeta, T. Ejima, T. Hatano, A. Arai, and M. Watanabe
  
• Aging and thermal stability of Mg/SiC and Mg/Y2O3 reflection multilayers in the 25-35 nm region;　2005
  ANNOUNCEMENT INFO.;　Applied Optics, 44, 26, 5446-5453
  AUTHOR;　T. Ejima, A. Yamazaki, T. Banse, K. Saito, Y. Kondo, S. Ichimaru, and H. Takenaka
  
• Polarization measurements of laboratory VUV light: a first comparison between multilayer polarizers and photoelectron angular distributions;　2003
  ANNOUNCEMENT INFO.;　Journal of Electron Spectroscopy and Related Phenomena, 130, 1-3, 79-84
  AUTHOR;　M. Takahashi, T. Hatano, T. Ejima, Y. Kondo, K. Saito, M. Watanabe, T. Kinugawa, and J. H. D. Eland
  
• Faraday and Magnetic Kerr Rotation Measurements on Co and Ni Films Around M2,3 Edges;　2002
  ANNOUNCEMENT INFO.;　Surface Review and Letters, 9, 2, 943-947
  AUTHOR;　K. Saito, M. Igeta, T. Ejima, T. Hatano, and M. Watanabe
  
• Multilayer Polarizers for the Use of He-I and He-II Resonance Lines;　2002
  ANNOUNCEMENT INFO.;　Surface Review and Letters, 9, 1, 587-591
  AUTHOR;　T. Hatano, Y. Kondo, K. Saito, T. Ejima, M. Watanabe, and M. Takahashi
  
• High-Reflection Multilayer for Wavelength Range of 200-30 nm;　2001
  ANNOUNCEMENT INFO.;　Nuclear Instruments and Methods in Physics Research Section A, 467-468, 333-337
  AUTHOR;　Y. Kondo, T. Ejima, K. Saito, T. Hatano, and M. Watanabe
  
• Faraday Rotation Measurement around Ni M2,3 Edges Using Al/YB6 Multilayer Polarizers;　1999
  ANNOUNCEMENT INFO.;　Journal of Electron Spectroscopy and Related Phenomena, 101–103, 287-291
  AUTHOR;　T. Hatano, W. Hu, K. Saito, and M. Watanabe
  

General Lectures

• Improved phosphorus incorporation in MBE-grown ZnTe layer using a cracked Zn3P2 dopant source;　2024/03
  ANNOUNCEMENT INFO.;　
  AUTHOR;　Muhamad Mustofa, Katsuhiko Saito, Qixin Guo, Tooru Tanaka
  
• Impact of substrate temperature and nitrogen partial pressure on structural and optoelectronic properties of RF magnetron sputtering grown Cu3N thin films;　2023/12
  ANNOUNCEMENT INFO.;　
  AUTHOR;　Shanta Majumder, Miho Ohishi, Katsuhiko Saito, Qixin Guo, Tooru Tanaka, Md Abdul Majed Patwary
  
• Improvement of phosphorus incorporation in P-doped ZnTe layers grown by molecular beam epitaxy using Zn3P2 dopant source;　2023/12
  ANNOUNCEMENT INFO.;　
  AUTHOR;　Muhamad Mustofa, Katsuhiko Saito, Qixin Guo, Tooru Tanaka
  
• MBE法を用いてInP(100)基板上に成長したPドープZnTe薄膜の評価;　2023/12
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• 異なる酸素濃度領域を持つZnTeO中間バンド型太陽電池の光電変換特性;　2023/12
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• Growth and characterization of P-doped Zn1-xCdxTe grown on GaAs(100) substrates by molecular beam epitaxy;　2023/12
  ANNOUNCEMENT INFO.;　
  AUTHOR;　Sule Enejo Victor, Muhamad Mustofa, Katsuhiko Saito, Qixin Guo, Tooru Tanaka
  
• 分子線エピタキシー法によるZnO薄膜の作製と評価;　2023/12
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• 異なるn型窓層を用いたZnTeO中間バンド型光電極の光電気化学特性;　2023/12
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• 異なる n 型窓層を用いた ZnTeO 中間バンド型太陽電池の作製と光電極への応用;　2023/11
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• 異なる酸素濃度領域を有する ZnTeO 中間バンド型太陽電池の作製と光電変換特性の評価;　2023/11
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• Influence of temperature, substrate position and nitrogen partial pressure on Cu3N thin films using RF magnetron sputtering;　2023/11
  ANNOUNCEMENT INFO.;　The 8th Asian Applied Physics Conference (Asian-APC), November 26, 2023, Kyushu University, 26Ep-7.
  AUTHOR;　Shanta Majumder, Miho Ohishi, Katsuhiko Saito, Qixin Guo, Tooru Tanaka, Md Abdul Majed Patwary
  
• 高周波マグネトロンスパッタリング法によるCu2O薄膜へのNa添加効果;　2023/11
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• PLD 法を用いたTb ドープ酸化ガリウム薄膜の作製と評価;　2023/11
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• 希土類元素ドープ酸化ガリウム薄膜の発光特性;　2023/11
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• InP(100)基板上へのP ドープZnTe 薄膜のMBE成長;　2023/11
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• MOVPE 法を用いたSiO2/Si上グラフェンへのZnTe 薄膜形成;　2023/11
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• Enhanced phosphorus incorporation in P-doped ZnTe layers grown by molecular beam epitaxy using Zn3P2 as dopant source material;　2023/11
  ANNOUNCEMENT INFO.;　The 8th Asian Applied Physics Conference (Asian-APC), November 25, 2023, Kyushu University, 25Ep-1.
  AUTHOR;　Muhamad Mustofa, Katsuhiko Saito, Qixin Guo, Tooru Tanaka
  
• Growth and characterization of P-doped CdTe grown on GaAs(100) substrates by molecular beam epitaxy;　2023/11
  ANNOUNCEMENT INFO.;　The 8th Asian Applied Physics Conference (Asian-APC), November 25, 2023, Kyushu University, 25Ep-2.
  AUTHOR;　Sule Enejo Victor, Muhamad Mustofa, Katsuhiko Saito, Qixin Guo, Tooru Tanaka
  
• ZnTeO中間バンド型光電極におけるn型窓層材料の検討;　2023/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• 酸素濃度を部分的に変化させたClドープZnTeO中間バンド型太陽電池の光電変換特性;　2023/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• 反応性スパッタ法によるInGaN薄膜の成長と評価;　2023/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• MOVPE成長したAlドープZnTe薄膜におけるポストアニール処理の効果;　2023/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• 酸素プラズマを用いた PLD 法によるMgGa2O4薄膜の成長と評価;　2023/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• Low temperature growth of magnesium gallate crystalline films;　2023/08
  ANNOUNCEMENT INFO.;　The International Conference on Crystal Growth and Epitaxy-ICCGE-20, 30 July- 4 August, 2023, Naples, Italy, 12:00 - 12:15, 4 August.
  AUTHOR;　Qixin Guo, Junya Tetsuka, Zewei Chen, Makoto Arita, Katsuhiko Saito, Tooru Tanaka
  
• ClドープZnCdTeO中間バンド型太陽電池の二段階光吸収電流の評価;　2023/06
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• Effect of P-doping in ZnTe thin films grown by molecular beam epitaxy under alternating supply;　2023/03
  ANNOUNCEMENT INFO.;　
  AUTHOR;　Muhamad Mustofa, Katsuhiko Saito, Qixin Guo, Tooru Tanaka
  
• 分子線エピタキシー法によるZnTeO薄膜の成長と光電極への応用;　2023/03
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• ClドープZnCdTeO中間バンド型太陽電池の光電変換特性の温度依存性;　2023/03
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• PLD法を用いたMgGa2O4薄膜の作製と評価;　2022/11
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• ClドープZnCdTeO中間バンド型太陽電池の光電変換特性の温度依存性;　2022/11
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• 高周波マグネトロンスパッタリング法によりサファイア基板上に作製したCu3N薄膜の基板温度依存性;　2022/11
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• 多重セレン化法によるCu2ZnSnSe4薄膜の作製と評価;　2022/11
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• 分子線エピタキシー法によるZnNiO薄膜の成長と評価;　2022/11
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• n-ZnS/ZnTeヘテロ接合光電極を用いた水の可視光分解用光触媒の開発;　2022/11
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• ZnTeO光電極における光電気化学特性の酸素濃度依存性;　2022/11
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• MOVPE成長Alドープ ZnTe薄膜特性に及ぼすポストアニーリング処理温度の影響 (２);　2022/11
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• RFスパッタリング法によるInGaN薄膜の低温成長と評価;　2022/11
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• Alternating molecular beam epitaxial growth of phosphorus-doped ZnTe thin films;　2022/11
  ANNOUNCEMENT INFO.;　The 7th Asian Applied Physics Conference (Asian-APC), November 26-27, 2022, Oita University, 26Ea-2.
  AUTHOR;　Muhamad Mustofa, Katsuhiko Saito, Qixin Guo, Tooru Tanaka
  
• Photoelectrochemical properties of a highly-mismatched ZnTeO alloys grown by molecular beam epitaxy;　2022/11
  ANNOUNCEMENT INFO.;　33rd International Photovoltaic and Engineering Conference November 13-17, 2022, Nagoya, Japan, WeP-21-03
  AUTHOR;　Takaki Sonoyama, Katsuhiko Saito, Qixin Guo, Shigeru Ikeda, Tooru Tanaka
  
• MBE growth and photochemical properties evaluation of n-ZnS/ZnTe thin films;　2022/11
  ANNOUNCEMENT INFO.;　33rd International Photovoltaic and Engineering Conference November 13-17, 2022, Nagoya, Japan, WeP-21-05
  AUTHOR;　Ryusuke Tsutsumi, Katsuhiko Saito, Qixin Guo, Shigeru Ikeda, Tooru Tanaka
  
• Effect of NaF addition to precursor for fabricating Cu2ZnSnSe4 thin films on alkali-free substrates by selenization;　2022/11
  ANNOUNCEMENT INFO.;　33rd International Photovoltaic and Engineering Conference November 13-17, 2022, Nagoya, Japan,TuP-32-37.
  AUTHOR;　Yuta Tamura, Katsuhiko Saito, Qixin Guo, Tooru Tanaka
  
• Effect of Cl-doping in ZnCdTeO on photovoltaic properties of ZnCdTeO intermediate band solar cells;　2022/11
  ANNOUNCEMENT INFO.;　33rd International Photovoltaic and Engineering Conference November 13-17, 2022, Nagoya, Japan,TuP-42-01
  AUTHOR;　Daiki Tani, Katsuhiko Saito, Qixin Guo, Tooru Tanaka
  
• The Effect of MBE alternating growth of phosphorus-doped ZnTe thin films;　2022/11
  ANNOUNCEMENT INFO.;　33rd International Photovoltaic and Engineering Conference November 13-17, 2022, Nagoya, Japan, TuP-42-03
  AUTHOR;　Muhamad Mustofa, Katsuhiko Saito, Qixin Guo, Tooru Tanaka
  
• Effect of nitrogen partial pressure on properties of Cu3N thin films by RF magnetron sputtering;　2022/11
  ANNOUNCEMENT INFO.;　33rd International Photovoltaic and Engineering Conference November 13-17, 2022, Nagoya, Japan, TuP-42-12
  AUTHOR;　Miho Ohishi, Katsuhiko Saito, Qixin Guo, Tooru Tanaka
  
• RFスパッタリング法によるInGaN の薄膜成長と評価;　2022/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• ClドープZnCdTeO中間バンド型太陽電池の光電変換特性の評価;　2022/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• 分子線エピタキシー法によるZnTeO薄膜の成長と光電気化学特性の評価;　2022/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• Growth and Characterization of GaInN Films by Reactive Sputtering;　2022/09
  ANNOUNCEMENT INFO.;　The 22nd International Vacuum Congress, September 11-16 , 2022, Sapporo Convention Center, Sapporo, Japan, Wed-PO1B-9.
  AUTHOR;　Qixin Guo, Ryuuichi Udou, Kotaro Nonaka, Katsuhiko Saito, and Tooru Tanaka
  
• Growth of Magnesium Gallate Films by Pulsed Laser Deposition;　2022/09
  ANNOUNCEMENT INFO.;　9th International Symposium on Control of Semiconductor Interfaces, Nagoya, Japan, MP2-7, September 5, 2022.
  AUTHOR;　Qixin Guo, Junya Tetsuka, Zewei Chen, Katsuhiko Saito, Tooru Tanaka
  
• Heteroepitaxial Growth of (AlGa)2O3 Thin Films on Sapphire Substrates by Plasma-Assisted Pulsed Laser Deposition;　2022/05
  ANNOUNCEMENT INFO.;　5th International Workshop on UV Materials and Devices(IWUMD 2022), Maison Glad Jeju, Jeju, Korea, May 23-26, 2022, WeA1-3, Online.
  AUTHOR;　Zewei Chen, Makoto Arita, Katsuhiko Saito, Tooru Tanaka, Qixin Guo
  
• Rutile GeO2 Film with (100) Orientation Grown on c-Plane Sapphire Substrate by Pulsed Laser Deposition;　2022/05
  ANNOUNCEMENT INFO.;　5th International Workshop on UV Materials and Devices(IWUMD 2022), Maison Glad Jeju, Jeju, Korea, May 23-26, 2022, P-28, On-demand, Online.
  AUTHOR;　Gaofeng Deng, Katsuhiko Saito, Tooru Tanaka, Qixin Guo
  
• Growth and characterization of phosphorus-doped ZnTe thin films by MBE;　2022/03
  ANNOUNCEMENT INFO.;　
  AUTHOR;　Muhamad Mustofa, Katsuhiko Saito, Qixin Guo, Tooru Tanaka
  
• 分子線エピタキシー成長による ZnTe 光電極を用いた 水の還元反応の評価;　2022/03
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• RFマグネトロンスパッタ法によるCu3N薄膜の窒素分圧依存性;　2022/03
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• MOVPE成長AlドープZnTe薄膜特性に及ぼすポストアニーリング処理温度の影響;　2021/12
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• Epitaxial growth of rutile GeO2 film on sapphire substrate by pulsed laser deposition;　2021/12
  ANNOUNCEMENT INFO.;　The 6th Asian Applied Physics Conference (Asian-APC), 5 December, 2021, Online, 5Ea-P2
  AUTHOR;　Gaofeng Deng, Katsuhiko Saito, Tooru Tanaka, Qixin Guo
  
• The effect of thermal annealing on the optical properties of europium doped Ga2O3 films;　2021/12
  ANNOUNCEMENT INFO.;　The 6th Asian Applied Physics Conference (Asian-APC), 5 December, 2021, Online, 5Ea-P12
  AUTHOR;　Yafei Huang, Katsuhiko Saito, Tooru Tanaka, Qixin Guo
  
• Near-infrared light-emitting devices based on Tm-doped gallium oxides;　2021/12
  ANNOUNCEMENT INFO.;　
  AUTHOR;　Zewei Chen, Katsuhiko Saito, Tooru Tanaka, Qixin Guo
  
• n型窓層にAlドープ ZnCdOを用いたZnTe太陽電池の作製と評価;　2021/12
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• 高周波マグネトロンスパッタリング法によるCu3N薄膜の膜特性に及ぼす基板温度及び基板位置の効果;　2021/12
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• セレン化法による無アルカリ基板上へのCu2ZnSnSe4薄膜作製におけるプリカーサへのNaF添加効果;　2021/12
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• 分子線エピタキシー法による光触媒応用を目指したZnTe薄膜の成長と光電気化学特性の評価;　2021/12
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• 酸素ラジカル源を用いたPLD法によるSi基板上へのTmドープGa2O3薄膜の作製と評価;　2021/12
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• RFスパッタリング法によるInGaNの薄膜成長と評価;　2021/12
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• Growth of phosphorus-doped ZnTe thin films using InP dopant sources by MBE;　2021/12
  ANNOUNCEMENT INFO.;　The 6th Asian Applied Physics Conference (Asian-APC), 4 December, 2021, Online, 4Dp-2.
  AUTHOR;　Muhamad Mustofa, Katsuhiko Saito, Qixin Guo, Tooru Tanaka
  
• Growth and characterization of Al-doped and undoped Zn1-xCdxO by molecular beam epitaxy under high oxygen flow rate;　2021/12
  ANNOUNCEMENT INFO.;　The 6th Asian Applied Physics Conference (Asian-APC), 4 December, 2021, Online, 4Ep-6
  AUTHOR;　HyoChang Jang, Katsuhiko Saito, Qixin Guo, Tooru Tanaka
  
• GGG基板上ZnTe薄膜のMOVPE成長と評価;　2021/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• Improved properties of low-resistive Al-doped ZnCdO thin films by MBE;　2020/03
  ANNOUNCEMENT INFO.;　2020年第67回応用物理学会春季学術講演会, 上智大学, 2020年3月13日, 13a-D215-2
  AUTHOR;　HyoChang Jang, Katsuhiko Saito, Qixin Guo, Tooru Tanaka
  
• 分子線エピタキシー法による光触媒応用を目指したZnO1-xTex薄膜の成長;　2020/03
  ANNOUNCEMENT INFO.;　2020年第67回応用物理学会春季学術講演会, 上智大学, 2020年3月13日, 13a-D215-3
  AUTHOR;　
  
• Growth and characterization RS-ZnCdO thin films on MgO(100) substrates by molecular beam epitaxy;　2019/12
  ANNOUNCEMENT INFO.;　Materials Research Meeting 2019, December 10-14, 2019, Yokohama
  AUTHOR;　HyoChang Jang, Katsuhiko Saito, Qixin Guo, Tooru Tanaka, Kin Man Yu, Wladek Walukiewicz
  
• Material Dependence of THz Emission of Spintronic THz Emitters;　2019/12
  ANNOUNCEMENT INFO.;　The Annual Meeting of Hokuriku Branch of JPS in 2019, Toyama Prefectural University, Dec. 7th, 2019
  AUTHOR;　C. Tachioka, M. Tani, V. Mag-usara, M. Talara, G. Torosyan, R. Beigang, K. Saito, Q. Guo, J. Afalla, T. Furuya, M. Escaño, H. Kitahara, M. Nakajima, D. Bulgarevich, M. Watanabe
  
• Influence of nitrogen doping on properties of Cu4O3 thin films fabricated by radio frequency magnetron sputtering for low-cost solar cells;　2019/11
  ANNOUNCEMENT INFO.;　The 4th Asian Applied Physics Conference (Asian-APC), Kumamoto University, 23Ep-1, Nov. 23 - 24, 2019
  AUTHOR;　Md Abdul Majed Patwary, Katsuhiko Saito, Qixin Guo, Tooru Tanaka, Kin Man Yu, Wladek Walukiewicz
  
• Influence of oxygen flow rate on properties of Al-doped ZnCdO thin films grown by radical-source molecular beam epitaxy;　2019/11
  ANNOUNCEMENT INFO.;　The 4th Asian Applied Physics Conference (Asian-APC), Kumamoto University, 23Ep-5, Nov. 23 - 24, 2019
  AUTHOR;　HyoChang Jang, Katsuhiko Saito, Qixin Guo, Tooru Tanaka
  
• Epitaxial growth of α-Ga2O3 thin films on sapphire substrates by pulsed laser deposition;　2019/11
  ANNOUNCEMENT INFO.;　The 4th Asian Applied Physics Conference (Asian-APC), Kumamoto University, 23Fa-2, Nov. 23 - 24, 2019
  AUTHOR;　Chen Zewei, Katsuhiko Saito, Tooru Tanaka, Qixin Guo
  
• Photoluminescence of Eu doped (InGa)2O3 films deposited at various substrate temperatures;　2019/11
  ANNOUNCEMENT INFO.;　The 4th Asian Applied Physics Conference (Asian-APC), Kumamoto University, 23Fa-3, Nov. 23 - 24, 2019
  AUTHOR;　Chengyu Pan, Fabi Zhang, Qixin Guo, Katsuhiko Saito, Tooru Tanaka
  
• Effect of assistant RF plasma on structure and properties of Ga2O3 related thin films prepared by pulsed laser deposition;　2019/11
  ANNOUNCEMENT INFO.;　The 4th Asian Applied Physics Conference (Asian-APC), Kumamoto University, 23Fa-4, Nov. 23 - 24, 2019
  AUTHOR;　Fabi Zhang, Congyu Hu, Katsuhiko Saito, Tooru Tanaka, Qixin Guo
  
• Effect of bandgap on the luminescence properties of Er-doped (AlxGa1-x)2O3 films;　2019/11
  ANNOUNCEMENT INFO.;　The 4th Asian Applied Physics Conference (Asian-APC), Kumamoto University, 23Fa-5, Nov. 23 - 24, 2019
  AUTHOR;　Gaofeng Deng, Fabi Zhang, Katsuhiko Saito, Tooru Tanaka, Makoto Arita, Qixin Guo
  
• P and Al co-doped ZnTe Epilayers Grown by MOVPE;　2019/10
  ANNOUNCEMENT INFO.;　The 19th International Conference on II-VI Compounds and Related Materials, P-10, October 27-31, 2019, Zhengzhou, China
  AUTHOR;　K. Saito, T. Hamada, Y. Hara, T. Tanaka, Q. Guo
  
• MBE growth and characterization of Cl-doped ZnCdTeO layers for intermediate band solar cells;　2019/10
  ANNOUNCEMENT INFO.;　The 19th International Conference on II-VI Compounds and Related Materials, P-35, October 27-31, 2019, Zhengzhou, China
  AUTHOR;　Y. Watanabe, T. Izumi, K. Saito, Q. Guo, T. Tanaka, K. M. Yu, and W.Walukiewicz
  
• Low temperature growth of Tm doped gallium oxide films by plasma-assisted pulsed laser deposition;　2019/09
  ANNOUNCEMENT INFO.;　he 4th International Workshop on Ultraviolet Materials and Devices (IWUMD-IV), September 8-13, 2019, Saint Petersburg, Russia, We-3p
  AUTHOR;　Q. Guo, S. Motomura, K. Saito, T. Tanaka
  
• Growth of Al-doped ZnCdO thin films on MgO substrates by molecular beam epitaxy;　2019/03
  ANNOUNCEMENT INFO.;　2019年第66回応用物理学会春季学術講演会, 東京工業大学, 平成31年3月10日, 10a-W922-5
  AUTHOR;　HyoChang Jang, Kento Matsuo, Katsuhiko Saito, Qixin Guo, Tooru Tanaka
  
• MBE によるCl ドープZnCdTeO 層の膜特性の組成依存性;　2019/03
  ANNOUNCEMENT INFO.;　2019年第66回応用物理学会春季学術講演会, 東京工業大学, 平成31年3月10日, 10a-W922-6
  AUTHOR;　
  
• InPをドーパント源に用いたPドープZnTe薄膜のMBE成長;　2019/03
  ANNOUNCEMENT INFO.;　2019年第66回応用物理学会春季学術講演会, 東京工業大学, 平成31年3月10日, 10a-W922-7
  AUTHOR;　
  
• 分子線エピタキシー法を用いたGaAs(100)基板上へのZnSe 薄膜成長;　2018/12
  ANNOUNCEMENT INFO.;　平成30年度応用物理学会九州支部学術講演会, 福岡大学, 平成30年12月8日, 8Ca-1
  AUTHOR;　
  
• 分子線エピタキシー法によるP ドープZnTe 薄膜の成長と評価;　2018/12
  ANNOUNCEMENT INFO.;　平成30年度応用物理学会九州支部学術講演会, 福岡大学, 平成30年12月8日, 8Ca-2
  AUTHOR;　
  
• 減圧MOVPE 法による(100)GaAs 基板上へのZnMgSeTe 薄膜成長;　2018/12
  ANNOUNCEMENT INFO.;　平成30年度応用物理学会九州支部学術講演会, 福岡大学, 平成30年12月8日, 8Ca-3
  AUTHOR;　
  
• Cl ドープZnTeO 中間バンド型太陽電池における光電変換特性の酸素濃度及び温度依存性;　2018/12
  ANNOUNCEMENT INFO.;　平成30年度応用物理学会九州支部学術講演会, 福岡大学, 平成30年12月8日, 8Ca-4
  AUTHOR;　
  
• RF スパッタリング法によるGaN を用いたInGaN 薄膜成長に関する研究;　2018/12
  ANNOUNCEMENT INFO.;　平成30年度応用物理学会九州支部学術講演会, 福岡大学, 平成30年12月8日, 8Ca-5
  AUTHOR;　
  
• 酸素ラジカル源を用いたPLD 法によるサファイア基板上へのSi ドープGa2O3 薄膜の作製と評価;　2018/12
  ANNOUNCEMENT INFO.;　平成30年度応用物理学会九州支部学術講演会, 福岡大学, 平成30年12月8日, 8Ap-1
  AUTHOR;　
  
• 酸素ラジカル源を用いたPLD 法によるα-Al2O3 基板上へのTm ドープGa2O3 薄膜の成長と評 価;　2018/12
  ANNOUNCEMENT INFO.;　平成30年度応用物理学会九州支部学術講演会, 福岡大学, 平成30年12月8日, 8Ap-2
  AUTHOR;　
  
• Characterization of Al-doped ZnCdO thin films on MgO substrates by molecular beam epitaxy;　2018/12
  ANNOUNCEMENT INFO.;　The 3rd Asian Applied Physics Conference (Asian-APC), 8 December, 2018, Fukuoka, 8Po-5
  AUTHOR;　HyoChang Jang, Kento Matsuo, Tooru Tanaka, Katsuhiko Saito and Qixin Guo
  
• Effect of oxygen flow rate and temperature on Cu4O3 Thin Films by Radio Frequency Sputtering;　2018/12
  ANNOUNCEMENT INFO.;　The 3rd Asian Applied Physics Conference (Asian-APC), 8 December, 2018, Fukuoka, 8Po-6
  AUTHOR;　Md Abdul Majed Patwary, Tooru Tanaka, Katsuhiko Saito, Qixin Guo, Kin Man Yu, and Wladek Walukiewicz
  
• HPT加工を施したバルクナノ結晶粒シリコンの電子状態変化;　2018/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• Growth and characterization of CdZnO thin films on sapphire substrates by MBE;　2018/09
  ANNOUNCEMENT INFO.;　20th International Conference on Molecular Beam Epitaxy, September 4, 2018, Shanghai, China, Tu-C2-1
  AUTHOR;　HyoChang Jang, Tooru Tanaka, Katsuhiko Saito, Qixin Guo, Kin Man Yu, Yeonbae Lee, and Wladek Walukiewicz
  
• Growth of P-doped ZnTe epilayers on ZnTe substrates by molecular beam epitaxy;　2018/09
  ANNOUNCEMENT INFO.;　20th International Conference on Molecular Beam Epitaxy, September 4, 2018, Shanghai, China, Tu-P-20
  AUTHOR;　K. Matsuo, Y. Watanabe, T. Tanaka, K. Saito, Y. Nose, Q. Guo, K. M. Yu, and W. Walukiewicz
  
• ClドープZnTeO中間バンド型太陽電池における光電変換特性の酸素濃度依存性;　2018/09
  ANNOUNCEMENT INFO.;　2018年第79回応用物理学会秋季学術講演会, 19p-PB5-13, 名古屋国際会議場, 2018年9月19日
  AUTHOR;　
  
• SnSeを用いたセレン化法によるCu2ZnSnSe4薄膜の作製と評価;　2018/09
  ANNOUNCEMENT INFO.;　2018年第79回応用物理学会秋季学術講演会, 21p-431B-1, 名古屋国際会議場, 2018年9月21日
  AUTHOR;　
  
• MOVPE growth of ZnMgSeTe alloys on (100) GaAa substrates;　2018/06
  ANNOUNCEMENT INFO.;　19th International Conference on Metalorganic Vapor Phase Epitaxy
  AUTHOR;　Katsuhiko Saito,Yusei Matsuo, Akihiro Tomota, Tatsuki Hamada, Yuken Oishi, Tooru Tanaka,and Qixin Guo
  
• Production of bulk nanograined Si by high-pressure torsion at various pressures;　2018/03
  ANNOUNCEMENT INFO.;　TMS2018 147th Annual Meeting & Exhibition
  AUTHOR;　Yoshifumi Ikoma, Terumasa Yamasaki, Katsuhiko Saito, Qixin Guo, Zenji Horita
  
• MBE成長によるZnTe薄膜へのPドーピング;　2018/03
  ANNOUNCEMENT INFO.;　2018年第65回応用物理学会春季学術講演会, 早稲田大学, 平成30年3月20日, 20a-F210-2
  AUTHOR;　
  
• Synthesis of Cl-doped ZnTeO for Intermediate Band Solar Cells;　2016/12
  ANNOUNCEMENT INFO.;　
  AUTHOR;　S. Tsutsumi, Y. Okano, T. Tanaka, K. Saito, Q. Guo, M. Nishio, K. M. Yu, and W. Walukiewicz
  
• Crystal growth of gallium oxide based wide bandgap semiconductors;　2016/10
  ANNOUNCEMENT INFO.;　International conference on applied crystallography, October 17-19, 2016, Houston, USA, Oct. 18 16:45-17:10
  AUTHOR;　Qixin Guo, Katsuhiko Saito, Tooru Tanaka, Mitsuhiro Nishio
  
• Growth of Zn1-xCdxTe1-yOy (x=0.2~0.5) highly mismatched alloys for intermediate band solar cells;　2016/10
  ANNOUNCEMENT INFO.;　26th edition of the International Photovoltaic Science and Engineering Conference (PVSEC-26), 26 October 2016, Singapore.
  AUTHOR;　T. Tanaka, T. Terasawa, Y. Okano, S. Tsutsumi, K. Saito, Q. Guo, M. Nishio, K. M. Yu, and W. Walukiewicz
  
• Epitaxial growth of Ga2O3:Er films on silicon substrate;　2016/08
  ANNOUNCEMENT INFO.;　The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18), August 7-12, 2016, Nagoya, MoP-G04.
  AUTHOR;　Z. Chen, K. Saito, T. Tanaka, M. Nishio, M. Arita, Q. Guo
  
• Low temperature growth of ZnO/MgZnO single quantum well;　2016/08
  ANNOUNCEMENT INFO.;　The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18), August 7-12, 2016, Nagoya, ThP-T04.
  AUTHOR;　X. Wang, K. Saito, T. Tanaka, M. Nishio, Q.-X. Guo
  
• Growth of ZnMgSeTe nearly Lattice-matched to ZnTe and p-type Doping by Low-pressure MOVPE;　2016/08
  ANNOUNCEMENT INFO.;　The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18), August 7-12, 2016, Nagoya, ThP-T04-10.
  AUTHOR;　K. Saito, M. Nishio, Y. Nakatsuru, T. Shono, Y.Matsuo, A. Tomota, T. Tanaka, and Q. X. Guo
  
• Photoluminescence and Electrical Properties of P-doped ZnTe Layers Grown by Low Pressure MOVPE;　2016/08
  ANNOUNCEMENT INFO.;　The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18), August 7-12, 2016, Nagoya, ThP-T04-11.
  AUTHOR;　M. Nishio, K. Saito, Y. Nakatsuru, T. Shono, Y.Matsuo, A. Tomota, T. Tanaka, and Q. X. Guo
  
• Green Electroluminescence from Er Doped Gallium Oxide/Silicon Heterostructured Light Emitting Device;　2016/06
  ANNOUNCEMENT INFO.;　58th Electronic Materials Conference, June 22-24, 2016, University of Delaware, Newark, DE, June 22, PS7.
  AUTHOR;　Qixin Guo, Zhenwei Chen, Shinji Noda, Katsuhiko Saito, Tooru Tanaka, and Mitsuhiro Nishio
  
• Cl-doping in Highly Mismatched ZnTe1-xOx Alloys for Intermediate Band Solar Cells;　2016/02
  ANNOUNCEMENT INFO.;　43rd IEEE Photovoltaic Specialists Conference (PVSC-43), June 9, 2016, Portland. 772.
  AUTHOR;　T. Tanaka, S. Tsutsumi, Y. Okano, K. Saito, Q. Guo, M. Nishio, K. M. Yu, and W. Walukiewicz
  
• Si-Doped Ga2O3 Films Grown by Pulsed Laser Deposition;　2015/11
  ANNOUNCEMENT INFO.;　International Workshop on Gallium Oxide and Related Materials 2015, E29, November 3-6, 2015, Kyoto
  AUTHOR;　F. Zhang, K. Saito, T. Tanaka, M. Nishio, and Q. Guo
  
• The Effect of Growth Temperature on Structural and Optical Properties of Europium Doped Ga2O3 Films;　2015/11
  ANNOUNCEMENT INFO.;　International Workshop on Gallium Oxide and Related Materials 2015, E30, November 3-6, 2015, Kyoto
  AUTHOR;　Z. Chen, K. Saito, T. Tanaka, M. Nishio, and Q. Guo
  
• Effect of Substrate Temperature on Structures and Optical Properties of (AlGa)2O3 Films;　2015/11
  ANNOUNCEMENT INFO.;　International Workshop on Gallium Oxide and Related Materials 2015, E33, November 3-6, 2015, Kyoto
  AUTHOR;　X. Wang, K. Saito, T. Tanaka, M. Nishio, and Q. Guo
  
• Influence of Source Transport Rate upon Compositions of Mg and Se in Zn1-xMgxSeyTe1-y Layers grown by Metalorganic Vapor Phase Epitaxy;　2015/09
  ANNOUNCEMENT INFO.;　The 17th International Conference on II-VI Compounds and Related Materials 13-18 Sept. 2015 Paris MOP-21
  AUTHOR;　K. Saito, M. Abiru, E. Mori, Y. Araki, D. Tanaka, T. Tanaka, Q.X. Guo, and M. Nishio
  
• Low Pressure MOVPE Growth and Characterization of ZnTe Homoepitaxial Layers;　2015/09
  ANNOUNCEMENT INFO.;　The 17th International Conference on II-VI Compounds and Related Materials 13-18 Sept. 2015 Paris MOP-23
  AUTHOR;　M. Nishio, K. Saito, M. Abiru, E. Mori, Y. Araki, D. Tanaka, T. Tanaka, Q.X. Guo
  
• Growth and Characterization of Zn-MgSeTe Epilayers on ZnTe Substrates by Molecular Beam Epitaxy;　2013/09
  ANNOUNCEMENT INFO.;　The 16th International Conference on II-VI Compounds and Related Materials, Nagahama Royal Hotel, Nagahama, Japan, September 9 - 13, 2013. Tu-P13.
  AUTHOR;　Kosuke Mizoguchi, Yasuhiro Nagao, Tooru Tanaka, Katsuhiko Saito, Qixin Guo, and Mitsuhiro Nishio
  
• Correlation Between Photoluminescence and Carrier Concentration in Phosphorus-doped ZnTe;　2013/09
  ANNOUNCEMENT INFO.;　The 16th International Conference on II-VI Compounds and Related Materials, Nagahama Royal Hotel, Nagahama, Japan, September 9 - 13, 2013. We-P27.
  AUTHOR;　Katsuhiko Saito, Ryosuke Ito, Kento Tanaka, Kensuke Urata, Yasuaki Nakamura, Tooru Tanaka, Qixin Guo, and Mitsuhiro Nishio
  
• Molecular Beam Epitaxy of n-ZnS Epilayers for ZnTe Solar Cell Application;　2013/09
  ANNOUNCEMENT INFO.;　The 16th International Conference on II-VI Compounds and Related Materials, Nagahama Royal Hotel, Nagahama, Japan, September 9 - 13, 2013. We-P15.
  AUTHOR;　Shin Haraguchi, Masaki Miyabara, Tooru Tanaka, Katsuhiko Saito, Qixin Guo, Mitsuhiro Nishio, Kin Man Yu, and Wladek Walukiewicz
  
• Growth and Characterization of Zn1-xMgxSeyTe1-y on ZnTe Substrate by Metalorganic Vapor Phase Epitaxy;　2013/09
  ANNOUNCEMENT INFO.;　The 16th International Conference on II-VI Compounds and Related Materials, Nagahama Royal Hotel, Nagahama, Japan, September 9 - 13, 2013. We-P13.
  AUTHOR;　Mitsuhiro Nishio, Katsuhiko Saito, Ryosuke Ito, Kento Tanaka, Kensuke Urata, Yasuaki Nakamura, Tooru Tanaka, and Qixin Guo
  
• Fabrication of ZnO/ZnTe Heterojunction by Using a Room Temperature Direct Bonding Technology;　2013/09
  ANNOUNCEMENT INFO.;　The 16th International Conference on II-VI Compounds and Related Materials, Nagahama Royal Hotel, Nagahama, Japan, September 9 - 13, 2013. We-P10.
  AUTHOR;　Hajime Akiyama, Katsuhiko Saito, Tooru Tanaka, Mitsuhiro Nishio, and Qixin Guo
  
• Growth of GaInN films on silicon substrates by reactive sputtering;　2013/07
  ANNOUNCEMENT INFO.;　The 12th International Symposium on Sputtering and Plasma Processes, Kyoto Research Park, July 10-12, 2013, TF P1-1.
  AUTHOR;　Q. Guo, T. Nakao, T. Ushijima, K. Saito, T. Tanaka, M. Nishio
  
• シンクロトロン放射光電子分光法によるZnTe/GaAsへテロ界面のバンドアライメント評価;　2013/07
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• Characterization of ZnTe layers on (0001) ZnO substrates by metalorganic vapor phase epitaxy;　2013/05
  ANNOUNCEMENT INFO.;　The 40th International Symposium on Compound Semiconductors, May 19-23, 2013, Kober Convention Center, Kobe, Japan, MoPC-01-09.
  AUTHOR;　Hajime Akiyama, Tooru Idekoba, Katsuhiko Saito, Tooru Tanaka, Mitsuhiro Nishio, and Qixin Guo
  
• Growth of Gallium Oxide Films by Pulsed Laser Deposition;　2013/05
  ANNOUNCEMENT INFO.;　The 40th International Symposium on Compound Semiconductors, May 19-23, 2013, Kober Convention Center, Kobe, Japan, MoPC-07-08.
  AUTHOR;　Qixin Guo, Fabi Zhang, Kouji Wakamatsu, Katsuhiko Saito, Tooru Tanaka, and Mitsuhiro Nishio
  
• Al電極の透明化により作製されたZnTe緑色LEDの特性;　2012/12
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• ZnTe緑色LEDの為のAl電極のエッチング;　2012/12
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• 分子線エピタキシー法によりZnTe基板上に成長させたn型ZnS薄膜の作製と評価;　2012/12
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• MOVPE法による(111)GaAs基板上へのZnTe薄膜成長及び特性評価;　2012/12
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• ZnCdTeOを用いた中間バンド型太陽電池の作製と評価;　2012/12
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• MOVPE法により成長されたPドープZn1-xMgxTeエピ膜の電気的性質及びフォトルミネッセンス特性に及ぼすアニール処理効果;　2012/12
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• 有機金属気相エピタキシャル法で成長されたZnTe膜の燐ドーピングに及ぼす原料供給量の影響;　2012/12
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• MOVPE法で作製されたZnTe薄膜の表面形態とフォトルミネッセンス特性;　2012/12
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• 多源蒸着法によるCu2ZnSnSe4薄膜太陽電池におけるKCNエッチング効果;　2012/12
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• PLD法によりα-Aｌ2O3基板上に作成したGa2O3薄膜の評価;　2012/12
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• RFスパッタリング法によるSi基板上のInGaN薄膜成長に関する研究;　2012/12
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• ZnTeO中間バンド型太陽電池における二段階光吸収による電流生成;　2012/10
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• 酸素イオン注入によるマルチバンドギャップ半導体ZnTe1-xOxの作製と光学特性の評価;　2012/10
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• α-Al2O3基板上へのPLD法によるGa2O3薄膜作製と評価;　2012/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• MOVPE法によるZnO基板上ZnTe薄膜の作製と評価;　2012/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• Molecular beam epitaxial growth of ZnCdTeO epilayers for intermediate band solar cells;　2012/09
  ANNOUNCEMENT INFO.;　The 17th International Conference on Molecular Beam Epitaxy, September 23-28, 2012, Nara, TuP-22.
  AUTHOR;　Y. Nagao, T. Mochinaga, T. Tanaka, K. Saito, Q. Guo, M. Nishio, K.M. Yu, and W. Walukiewicz
  
• ZnTeO中間バンド型太陽電池の作製と特性評価;　2012/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• Development of ZnTe-based solar cells;　2012/08
  ANNOUNCEMENT INFO.;　8th International Forum on Advanced Material Science and Technology (IFAMST-8), Fukuoka, August 1-4, 2012, 2P-PS28.
  AUTHOR;　M. Miyabara, T. Tanaka, K. Saito, Q. Guo, M. Nishio, K. M. Yu, W. Walukiewicz
  
• Growth of ZnTe Layers on (0001) ZnO Substrates by metalorganic vapor phase epitaxy;　2012/08
  ANNOUNCEMENT INFO.;　8th International Forum on Advanced Material Science and Technology (IFAMST-8), Fukuoka, August 1-4, 2012, 3A-OS01-06.
  AUTHOR;　H. Akiyama, H. Hirano, T. Konomi, K. Saito, T. Tanaka, M. Nishio, Q. Guo
  
• Synchrotron-Radiation-Excited UV-VIS Luminescence Experimental Station at Saga University beamline BL13: Design and Installation Progress;　2012/08
  ANNOUNCEMENT INFO.;　8th International Forum on Advanced Material Science and Technology (IFAMST-8), Fukuoka, August 1-4, 2012, 2P-PS20.
  AUTHOR;　K. Saito, T. Tanaka, M. Nishio, Q. Guo
  
• Synthesis and Optical Properties of ZnTe1-xOx Highly Mismatched Alloys for Intermediate Band Solar Cells;　2012/06
  ANNOUNCEMENT INFO.;　37th IEEE Photovoltaic Specialists Conference, June 3-8, 2012, Austin, Texas.
  AUTHOR;　T. Tanaka, T. Mochinaga, K. Saito, Q. Guo, M. Nishio, K. M. Yu, W. Walukiewic
  
• Influence of (MeCp)2Mg Transport Rate upon Growth of Phosphorus-doped ZnMgTe Layers by MOVPE;　2012/05
  ANNOUNCEMENT INFO.;　16th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-XVI), May 20-25, 2012, Busan, Korea, TuP-62.
  AUTHOR;　K. Saito, K. Sekioka, T. Tanaka, Q. Guo, and M. Nishio
  
• Surface Morphologies and Photoluminescence Properties of Undoped and P-doped ZnTe Layers Grown by Metaloroganic Vapor Phase Epitaxy;　2012/05
  ANNOUNCEMENT INFO.;　16th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-XVI), May 20-25, 2012, Busan, Korea, TuP-63.
  AUTHOR;　M. Nishio, Y. Hayashida, K. Saito, T. Tanaka, and Q. Guo
  
• Effects of Annealing Treatment upon Electrical and Photoluminescence Properties of Phosphorus-Doped ZnMgTe Epilayers Grown by Metaloroganic Vapor Phase Epitaxy;　2012/05
  ANNOUNCEMENT INFO.;　16th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-XVI), May 20-25, 2012, Busan, Korea, ThB1-4.
  AUTHOR;　M. Nishio, K. Kai, R. Fujiki, K. Saito, T. Tanaka, and Q. Guo
  
• Characterization of ZnTe Epilayers on GaAs (111) Substrates by Metalorganic Vapor Phase Epitaxy;　2012/05
  ANNOUNCEMENT INFO.;　16th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-XVI), May 20-25, 2012, Busan, Korea, TuP-59.
  AUTHOR;　Q. Guo, H. Akiyama, H. Hirano, K. Saito, T. Tanaka, and M. Nishio
  
• ZnCdTeOのMBE成長と物性評価;　2012/03
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• MOLECULAR BEAM EPITAXIAL GROWTH OF ZnTe1-XOX LAYERS FOR INTERMEDIATE BAND SOLAR CELL APPLICATIONS;　2011/12
  ANNOUNCEMENT INFO.;　21st International Photovoltaic Science and Engineering Conference (PVSEC-21), 3D-5P-35, November 28-December 2, 2011, Fukuoka.
  AUTHOR;　T. Tanaka, S. Kusaba, T. Mochinaga, K. Saito, Q. Guo, M. Nishio, K. M. Yu, and W. Walukiewicz
  
• COMPOSITION DEPENDENCE OF ELECTRICAL PROPERTIES OF CU2ZNSNSE4 THIN FILMS FABRICATED BY CO-EVAPORATION;　2011/12
  ANNOUNCEMENT INFO.;　21st International Photovoltaic Science and Engineering Conference (PVSEC-21), 4D-3P-14, November 28-December 2, 2011, Fukuoka.
  AUTHOR;　T. Sueishi, T. Tanaka, K. Saito, Q. Guo, M. Nishio, K. M. Yu, W. Walukiewicz
  
• GaAs(111)基板上へPLD法によるZnO薄膜作製;　2011/11
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• 酸素イオン注入により作製したZnTeO薄膜の評価;　2011/11
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• MBE法によるZnCdTe成長と物性評価;　2011/11
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• MOVPE法による(111)GaAs基板上のZnTe薄膜の作製と評価;　2011/11
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• 分子線エピタキシー法により形成したZnTeO薄膜の光学特性;　2011/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• ZnTeO薄膜の分子線エピタキシャル成長と評価;　2011/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• 有機金属気相成長法によるZnTeヘテロエピタキシャル薄膜のGaAs(111)基板上への作製及び特性評価;　2011/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• PLD法によるAl2O3（001）基板上へのFe3O4薄膜作製;　2011/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• ZnTe緑色LEDのAl電極透明化の為のAlエッチング特性;　2011/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• Cu2ZnSnSe4薄膜におけるCu2Se相の選択エッチングに関する研究;　2011/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• PドープZnMgTeエピ膜のフォトルミネッセンスに及ぼすアニール時の温度、時間、雰囲気ガスの効果;　2011/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• RFスパッタリング法により作製されたInGaN薄膜の特性評価;　2011/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• PドープZn1-xMgxTeバルク結晶の電気的特性の測定温度依存性、ラマンスペクトルのＭｇ組成依存性;　2011/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• MOVPE法によって成長されたPドープZnMgTeエピ膜の電気的性質に及ぼすアニール時の温度、時間、雰囲気ガスの効果;　2011/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• 透明導電膜を用いたZnTe太陽電池の作製と評価;　2011/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• ＰドープZnMgTeエピ膜の成長特性に及ぼすDETe供給量依存性;　2011/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• ＰドープZnMgTeエピ膜の電気的性質に及ぼすTDMAP供給量効果;　2011/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• Influence of dopant transport rate upon photoluminescence and electrical properties of phosphorus-doped ZnMgTe layers grown by MOVPE;　2011/08
  ANNOUNCEMENT INFO.;　15th International Conference on II-VI Compounds, August 21-26, 2011, Mayan Riviera, Mexico, Tu-P04.
  AUTHOR;　K. Saito, T. Saeki, T. Tanaka, Q.X. Guo, and M. Nishio
  
• Influence of source transport rate upon phosphorus doping in ZnTe layer grown by MOVPE;　2011/08
  ANNOUNCEMENT INFO.;　15th International Conference on II-VI Compounds, August 21-26, 2011, Mayan Riviera, Mexico, Thu-P03.
  AUTHOR;　M. Nishio, X. Han, K. Saito, T. Tanaka, Q.X. Guo
  
• Fundamental properties of sputtered InGaN films;　2011/07
  ANNOUNCEMENT INFO.;　The Eleventh International Symposium on Sputtering & Plasma Processes, July 6-8, 2011, Kyoto, Japan, TF P1-20.
  AUTHOR;　Q. X. Guo, H. Senda, K. Saito, T. Tanaka, M. Nishio, J. Ding, T. Fan, and D. Zhang
  
• 酸素イオン注入により形成したZnTeOの光学特性と中間バンド太陽電池応用;　2011/06
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• 酸素イオン注入により形成したZnTeOの光学特性;　2011/03
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• Growth of ZnTe nanowires by molecular beam exitaxy;　2011/03
  ANNOUNCEMENT INFO.;　International colloquium on “Recent progress in nanofabrications of MEMS and NEMS: Science and innovation technologies”, Hakata, Fukuoka, March 24, 2010.
  AUTHOR;　T. Mochinaga, H. Ohshita, T. Tanaka, K. Saito, Q. Guo, and M. Nishio
  
• Al熱拡散を用いたZnTeホモ接合太陽電池の作製と評価;　2011/03
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  

Application of Intellectual Property Rights

• 半導体装置及びその製造方法;　2007/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• 半導体の製造方法;　2006/08
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  

Invited Lecture, Special Lecture

• Terahertz Spintronic Emitters: the Properties and Optimizations;　2019/10
  ANNOUNCEMENT INFO.;　The 5th International Symposium on Microwave/Terahertz Science and Applications (MTSA2019), Busan, Korea, 29 September to 3 October, 2019.
  AUTHOR;　Masahiko Tani, Valynn Katrine Mag-usara, Miezel Talara, Chiyaka Tachioka, Garik Torosyan, Ren H Beigang, Katsuhiko Saito, Qixin Guo, Jessica Pauline Afalla, Takashi Furuya, Mary Clare Esca Po, Hideaki Kitahara, Makoto Nakajima, Dmitry Bulgarevich, Makoto Watanabe
  
• Microstructural and Optical Properties of Nanograined Si Processed by High-Pressure Torsion;　2018/08
  ANNOUNCEMENT INFO.;　The 5th International Conference on Nanomechanics and Nanocomposites (ICNN5)
  AUTHOR;　Yoshifumi Ikoma, Bumsoo Chon, Terumasa Yamasaki, Katsuhiko Saito, Qixin Guo, Martha R. McCartney, David J. Smith, Zenji Horita
  
• Heteroepitaxial growth of ZnTe layers by MOVPE (Invited Talk);　2012/12
  ANNOUNCEMENT INFO.;　The Collaborative Conference on Crystal Growth 2012, A23, December 12, 2012, 14:00-14:25, Doubletree by Hilton Orlando at SeaWorld, Orlando, FL, USA.
  AUTHOR;　Qixin Guo, Katsuhiko Saito, Tooru Tanaka, and Mitsuhiro Nishio
  
• Low-temperature Epitaxial Growth of GaInN Films (invited);　2012/08
  ANNOUNCEMENT INFO.;　8th International Forum on Advanced Material Science and Technology (IFAMST-8), Fukuoka, August 1-4, 2012, 3A-OS01-08.
  AUTHOR;　Q. Guo, T. Nakao, M. Arita, K. Saito, T. Tanaka, M. Nishio
  
• ZnTeO系高不整合材料の作製と中間バンド太陽電池への応用;　2012/05
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• STRUCTURAL PROPERTIES OF MAGNETITE FILMS GROWN BY PULSED LASER DEPOSITION (Invited Talk);　2011/07
  ANNOUNCEMENT INFO.;　The Nineteenth Annual International Conference on COMPOSITES/NANO ENGINEERING, July 24-30, 2011, Session 2d OXIDE 1, Invited Talk, July 25, Shanghai, China.
  AUTHOR;　Q. Guo, K. Nakamura, K. Saito, T. Tanaka, M. Nishio, M. Arita, Y. Ikoma, J. Ding, and D. Zhang