Researcher Database

NameKatsuhiko Saito
DepartmentSynchrotron Light Application Center
Job TitleAssistant Professor Degree Obtained
E-mail
Homepagehttp://www.slc.saga-u.ac.jp/

Detailed Information

Research Field/Keywords for Research Field

  • Synchrotron light, Compound semiconductor, Epitaxial growth

Education

  • 1996/03, Graduated
  • 1998/03, Master Course, Completed
  • 2003/09, Doctor Course, Completed

Employment Experience

  • 2003/04 - 2005/03 Saga University
  • 2005/04 - 2006/07 Saga University
  • 2006/08 - 2007/03
  • 2007/04 - 2008/06 Synchrotron Light Application Center, Saga University
  • 2008/07 - 2008/08 Saga University
  • 2009/04 -  *  Assistant Professor, Synchrotron Light Application Center, Saga University

Field of Specialization

  • Applied materials, Crystal engineering, Thin film/Surface and interfacial physical properties, Electronic materials/Electric materials

Membership in Academic Societies

  • The Japanese Society for Synchrotron Radiation Research, The Japan Society of Applied Physics

Research Topics and Results

Books

  • 第2編 第7章 第6節 ZnTe基板とLEDへの応用; 2013
    ANNOUNCEMENT INFO.; 
    AUTHOR; 
  • Enhanced Efficiency of ZnTe-Based Green Light-Emitting Diodes; 2012/09
    ANNOUNCEMENT INFO.; Light-Emitting Diodes and Optoelectronics: New Research, Nova Science Publishers, Inc. New York (2012). ISBN: 978-1-62100-448-6.
    AUTHOR; T. Tanaka, K. Saito, Q. Guo, and M. Nishio

Original Articles

  • Influence of oxygen flow rate and substrate positions on properties of Cu-oxide thin films fabricated by radio frequency magnetron sputtering using pure Cu target; 2019/04
    ANNOUNCEMENT INFO.; Thin Solid Films, 675, 59-65
    AUTHOR; Patwary, M.A.M., Saito, K., Guo, Q., Tanaka, T.
  • Crystal and electronic structural changes during annealing in severely deformed Si containing metastable phases formed by high-pressure torsion; 2018/09
    ANNOUNCEMENT INFO.; Applied Physics Letters, 113, 10, 101904
    AUTHOR; Ikoma, Y., Chon, B., Yamasaki, T., Takahashi, K., Saito, K., Guo, Q., Horita, Z.
  • Improved photovoltaic properties of ZnTeO-based intermediate band solar cells; 2018/04
    ANNOUNCEMENT INFO.; Proceedings of SPIE - The International Society for Optical Engineering, 10527, 105270P
    AUTHOR; Tanaka, T., Saito, K., Guo, Q., Yu, K.M., Walukiewicz, W.
  • Local Bi-O bonds correlated with infrared emission properties in triply doped Gd2.95Yb0.02Bi0.02Er0.01Ga5O12via temperature-dependent Raman spectra and x-ray absorption fine structure analysis; 2018/02
    ANNOUNCEMENT INFO.; Journal of Physics Condensed Matter, 30, 12, 125901
    AUTHOR; Tong, L., Saito, K., Guo, Q., Zhou, H., Guo, X., Fan, T., Zhang, D.
  • Photoluminescence of ZnTe/ZnMgTe multiple quantum well structures grown on ZnTe substrates by molecular beam epitaxy; 2018/02
    ANNOUNCEMENT INFO.; Superlattices and Microstructures, 114, 192-199
    AUTHOR; Tanaka, T., Ohshita, H., Saito, K., Guo, Q.
  • Ultraviolet emission from MgZnO films and ZnO/MgZnO single quantum wells grown by pulsed laser deposition; 2018/02
    ANNOUNCEMENT INFO.; Journal of Crystal Growth, 483, 39-43
    AUTHOR; Wang, X., Chen, Z., Hu, C., Saito, K., Tanaka, T., Nishio, M., Guo, Q.
  • The impact of dopant contents on structures, morphologies and optical properties of Eu doped Ga2O3films on GaAs substrate; 2018/02
    ANNOUNCEMENT INFO.; Journal of Luminescence, 194, 374-378
    AUTHOR; Chen, Z., Nishihagi, K., Wang, X., Hu, C., Arita, M., Saito, K., Tanaka, T., Guo, Q.
  • Regulation mechanism of bottleneck size on Li+ migration activation energy in garnet-type Li7La3Zr2O12; 2018/01
    ANNOUNCEMENT INFO.; 
    AUTHOR; Yanhua Zhang, Fei Chen, Junyang Li, Lianmeng Zhang, Jiajun Gu, Di Zhang, Katsuhiko Saito, Qixin Guo, Ping Luo, Shijie Dong
  • Defect induced visible-light-activated near-infrared emissions in Gd3-x-Y-zYbxBiyErzGa5O12; 2017/11
    ANNOUNCEMENT INFO.; Journal of Applied Physics, 122, 17, 173103
    AUTHOR; Tong, L., Saito, K., Guo, Q., Zhou, H., Fan, T., Zhang, D.
  • Characteristics of thulium doped gallium oxide films grown by pulsed laser deposition; 2017/10
    ANNOUNCEMENT INFO.; Thin Solid Films, 639, 123-126
    AUTHOR; Guo, Q., Nishihagi, K., Chen, Z., Saito, K., Tanaka, T.
  • Temperature-dependent raman scattering in cubic (InGa)2O3 thin films; 2017/01
    ANNOUNCEMENT INFO.; Journal of Alloys and Compounds, 690, 287-292
    AUTHOR; Xu Wang, Zhengwei Chen, Katsuhiko Saito, Tooru Tanaka, Mitsuhiro Nishio, Qixin Guo
  • Phase transformation of germanium by processing through high-pressure torsion: strain and temperature effects; 2017/01
    ANNOUNCEMENT INFO.; Philosophical Magazine Letters, 97, 1, 27-34
    AUTHOR; Yoshifumi Ikoma, Kazuki Kumano, Kaveh Edalati, Katsuhiko Saito, Qixin Guo, Zenji Horita
  • Structural properties of Eu doped gallium oxide films; 2017
    ANNOUNCEMENT INFO.; Materials Research Bulletin, 94, 170-173
    AUTHOR; K. Nishihagi, Z. Chen, K. Saito, T. Tanaka, Q. Guo
  • Growth and characterization of Zn1-xCdxTe1-yOy highly mismatched alloys for intermediate band solar cells; 2017
    ANNOUNCEMENT INFO.; Solar Energy Materials and Solar Cells, 169, 1-7
    AUTHOR; T. Tanaka, T. Terasawa, Y. Okano, S. Tsutsumi, K. Saito, Q. Guo, M. Nishio, K.M. Yu, W. Walukiewicz
  • Growth of ZnMgSeTe nearly lattice-matched to ZnTe and p-type doping by low-pressure MOVPE; 2017
    ANNOUNCEMENT INFO.; Journal of Crystal Growth, 468, 671-675
    AUTHOR; Saito, K., Nishio, M., Nakatsuru, Y., Shono, T., Matsuo, Y., Tomota, A., Tanaka, T., Guo, Q.X.
  • Photoluminescence and electrical properties of P-doped ZnTe layers grown by low pressure MOVPE; 2017
    ANNOUNCEMENT INFO.; Journal of Crystal Growth, 468, 666-670
    AUTHOR; Nishio, M., Saito, K., Nakatsuru, Y., Shono, T., Matsuo, Y., Tomota, A., Tanaka, T., Guo, Q.X.
  • Improved Open-Circuit Voltage and Photovoltaic Properties of ZnTeO-Based Intermediate Band Solar Cells With n-Type ZnS Layers; 2017
    ANNOUNCEMENT INFO.; IEEE Journal of Photovoltaics, 7, 4, 7935367, 1024-1030
    AUTHOR; Tanaka, T., Yu, K.M., Okano, Y., Tsutsumi, S., Haraguchi, S., Saito, K., Guo, Q., Nishio, M., Walukiewicz, W.
  • Efficient pure green emission from Er-doped Ga2O3 films; 2017
    ANNOUNCEMENT INFO.; CrystEngComm, 19, 31, 4448-4458
    AUTHOR; Chen, Z., Saito, K., Tanaka, T., Guo, Q.
  • Characterization of p-ZnTe/n-ZnO heterojunction interface prepared by direct bonding technology; 2016/09
    ANNOUNCEMENT INFO.; IEEJ Transactions on Electronics, Information and Systems, 136, 12, 1761-1766
    AUTHOR; H. Akiyama, J. Utsumi, T. Tanaka, K. Saito, M. Nishio, Q. Guo
  • Toward controlling the carrier density of Si doped Ga2O3 films by pulsed laser deposition; 2016/09
    ANNOUNCEMENT INFO.; Applied Physics Letters, 109, 10, 102105
    AUTHOR; Fabi Zhang , Makoto Arita , Xu Wang , Zhengwei Chen , Katsuhiko Saito , Tooru Tanaka , Mitsuhiro Nishio , Teruaki Motooka , Qixin Guo
  • Band alignment of Ga2O3/Si heterojunction interface measured by X-ray photoelectron spectroscopy; 2016/09
    ANNOUNCEMENT INFO.; Applied Physics Letters, 109, 10, 102106
    AUTHOR; Zhengwei Chen, Kazuo Nishihagi , Xu Wang , Katsuhiko Saito , Tooru Tanaka , Mitsuhiro Nishio , Makoto Arita , Qixin Guo
  • Observation of low voltage driven green emission from erbium doped Ga2O3 light-emitting devices; 2016/08
    ANNOUNCEMENT INFO.; Applied Physics Letters, 109, 2, 022107
    AUTHOR; Zhengwei Chen, Xu Wang , Fabi Zhang , Shinji Noda , Katsuhiko Saito , Tooru Tanaka , Mitsuhiro Nishio , Makoto Arita , Qixin Guo
  • Highly transparent conductive Ga doped ZnO films in the near-infrared wavelength range; 2016/07
    ANNOUNCEMENT INFO.; Journal of Materials Science: Materials in Electronic, 27, 9, 9291-9296
    AUTHOR; Zhengwei Chen, Katsuhiko Saito, Tooru Tanaka, Mitsuhiro Nishio, Qixin Guo
  • Influence of substrate temperature on the properties of (AlGa)2O3 thin films prepared by pulsed laser deposition; 2016/06
    ANNOUNCEMENT INFO.; Ceramics International, 42, 11, 12783-12788
    AUTHOR; Xu Wang, Zhengwei Chen, Fabi Zhang, Katsuhiko Saito, Tooru Tanaka, Mitsuhiro Nishio, Qixin Guo
  • Temperature dependence of luminescence spectra in europium doped Ga2O3 film; 2016/04
    ANNOUNCEMENT INFO.; Journal of Luminescence, 177, 48-53
    AUTHOR; Zhengwei Chen, Xu Wang, Fabi Zhang, Shinji Noda, Katsuhiko Saito, Tooru Tanaka, Mitsuhiro Nishio, Qixin Guo
  • Influence of source transport rate upon fractions of Mg and Se in Zn1-xMgxSeyTe1-y Layers grown by metalorganic vapor phase epitaxy; 2016
    ANNOUNCEMENT INFO.; Physica Status Solidi (C) Current Topics in Solid State Physics, 13, 443-447
    AUTHOR; K. Saito, M. Abiru, E. Mori, Y. Araki, D. Tanaka, T. Tanaka, Q. Guo, and M. Nishio
  • Low Pressure MOVPE Growth and Characterization of ZnTe Homoepitaxial Layers; 2016
    ANNOUNCEMENT INFO.; Physica Status Solidi (C) Current Topics in Solid State Physics, 13, 439-442
    AUTHOR; M. Nishio, K. Saito, M. Abiru, E. Mori, Y. Araki, D. Tanaka, T. Tanaka, and Q. Guo
  • The impact of growth temperature on the structural and optical properties of catalyst-Free β-Ga2O3 nanostructures; 2016
    ANNOUNCEMENT INFO.; Materials Research Express, 3, 2, 25003
    AUTHOR; Chen, Z., Wang, X., Saito, K., Tanaka, T., Nishio, M., Guo, Q.
  • Effects of dopant contents on structural, morphological and optical properties of Er doped Ga2O3 films; 2016
    ANNOUNCEMENT INFO.; Superlattices and Microstructures, 90, 207-214
    AUTHOR; Chen, Z., Wang, X., Noda, S., Saito, K., Tanaka, T., Nishio, M., Arita, M., Guo, Q.
  • Compositional dependence of optical transition energies in highly mismatched Zn1-xCdxTe1-yOy alloys; 2016
    ANNOUNCEMENT INFO.; Applied Physics Express, 9, 2, 21202
    AUTHOR; Tanaka, T., Mizoguchi, K., Terasawa, T., Okano, Y., Saito, K., Guo, Q., Nishio, M., Yu, K.M., Walukiewicz, W.
  • Temperature dependence of Raman scattering in β -(AlGa)2O3 thin films; 2016
    ANNOUNCEMENT INFO.; AIP Advances, 6, 1, 15111
    AUTHOR; Wang, X., Chen, Z., Zhang, F., Saito, K., Tanaka, T., Nishio, M., Guo, Q.
  • Cl-doping in highly mismatched ZnTe1-xOx alloys for intermediate band solar cells; 2016
    ANNOUNCEMENT INFO.; Conference Record of the IEEE Photovoltaic Specialists Conference, 2016-November, 2830-2832
    AUTHOR; Tanaka, T., Tsutsumi, S., Okano, Y., Saito, K., Guo, Q., Nishio, M., Yu, K.M., Walukiewicz, W.
  • Compositions of Mg and Se, surface morphology, roughness and Raman property of Zn1-xMgxSeyTe1-y layers grown at various substrate temperatures or dopant transport rates by MOVPE; 2015
    ANNOUNCEMENT INFO.; Journal of Crystal Growth, 414, 114-118
    AUTHOR; M. Nishio, K. Saito, K. Urata, Y. Okamoto, D. Tanaka, Y. Araki, M. Abiru, E. Mori, T. Tanaka, Q. Guo
  • Lower temperature growth of single phase MgZnO films in all Mg content range; 2015
    ANNOUNCEMENT INFO.; Journal of Alloys and Compounds, 627, 383-387
    AUTHOR; X. Wang, K. Saito, T. Tanaka, M. Nishio, Q. Guo
  • Electrical properties of Si doped Ga2O3 films grown by pulsed laser deposition; 2015
    ANNOUNCEMENT INFO.; Journal of Materials Science: Materials in Electronics, 26, 12, 9624-9629
    AUTHOR; Zhang, F., Saito, K., Tanaka, T., Nishio, M., Guo, Q.
  • Low temperature growth of europium doped Ga2O3 luminescent films; 2015
    ANNOUNCEMENT INFO.; Journal of Crystal Growth, 430, 28-33
    AUTHOR; Chen, Z., Saito, K., Tanaka, T., Nishio, M., Arita, M., Guo, Q.
  • Allotropic phase transformation and photoluminescence of germanium nanograins processed by high-pressure torsion; 2015
    ANNOUNCEMENT INFO.; Journal of Materials Science, 51, 1, 138-143
    AUTHOR; Ikoma, Y., Toyota, T., Ejiri, Y., Saito, K., Guo, Q., Horita, Z.
  • Energy band bowing parameter in MgZnO alloys; 2015
    ANNOUNCEMENT INFO.; Applied Physics Letters, 107, 2, 22111
    AUTHOR; Wang, X., Saito, K., Tanaka, T., Nishio, M., Nagaoka, T., Arita, M., Guo, Q.
  • Toward the understanding of annealing effects on (GaIn)2O3 films; 2015
    ANNOUNCEMENT INFO.; Thin Solid Films, 578, 1-6
    AUTHOR; Zhang, F., Jan, H., Saito, K., Tanaka, T., Nishio, M., Nagaoka, T., Arita, M., Guo, Q.
  • Structural and optical properties of Ga2O3 films on sapphire substrates by pulsed laser deposition; 2014
    ANNOUNCEMENT INFO.; Journal of Crystal Growth, 387, 96-100
    AUTHOR; F.B. Zhang, K. Saito, T. Tanaka, M. Nishio, Q.X. Guo
  • Growth of InGaN layers on (1 1 1) silicon substrates by reactive sputtering; 2014
    ANNOUNCEMENT INFO.; Journal of Alloys and Compounds, 587, 217-221
    AUTHOR; Q. Guo, T. Nakao, T. Ushijima, W. Shi, F. Liu, K. Saito, T. Tanaka, M. Nishio
  • Photogenerated Current By Two-Step Photon Excitation in ZnTeO Intermediate Band Solar Cells with n-ZnO Window Layer; 2014
    ANNOUNCEMENT INFO.; IEEE Journal of Photovoltaics, 4, 1, 196-201
    AUTHOR; T. Tanaka, M. Miyabara, Y. Nagao, K. Saito, Q. Guo, M. Nishio, K.M. Yu, W. Walukiewicz
  • Fabrication of ZnO/ZnTe heterojunction by using a Room Temperature Direct Bonding technology; 2014
    ANNOUNCEMENT INFO.; Physica Status Solidi (C) Current Topics in Solid State Physics, 11, 1218-1220
    AUTHOR; H. Akiyama, K. Saito, T. Tanaka, M. Nishio, Q. Guo
  • The effect of substrate temperature upon the compositions of Mg and Se in Zn1-xMgxSeyTe1-y layer grown by MOVPE; 2014
    ANNOUNCEMENT INFO.; Physica Status Solidi (C) Current Topics in Solid State Physics, 11, 1202-1205
    AUTHOR; M. Nishio, K. Saito, R. Ito, K. Tanaka, K. Urata, Y. Nakamura, T. Tanaka, Q.X. Guo
  • Wide bandgap engineering of (GaIn)2O3 films; 2014
    ANNOUNCEMENT INFO.; Solid State Communications, 186, 28-31
    AUTHOR; Fabi Zhang, Katsuhiko Saito, Tooru Tanaka, Mitsuhiro Nishio, and Qixin Guo
  • Fabrication of Nanograined Silicon by High-Pressure Torsion; 2014
    ANNOUNCEMENT INFO.; Journal of Materials Science, 49, 19, 6565-6569
    AUTHOR; Y. Ikoma, K. Hayano, K. Edalati, K. Saito, Q. Guo, Z. Horita, T. Aoki, D.J. Smith
  • Electrical properties and emission mechanisms of Zn-doped β-Ga 2O3 films; 2014
    ANNOUNCEMENT INFO.; Journal of Physics and Chemistry of Solids, 75, 11, 1201-1204
    AUTHOR; X.H. Wang, F.B. Zhang, K. Saito, T. Tanaka, M. Nishio, Q.X. Guo
  • Wide bandgap engineering of (AlGa)2O3 films; 2014
    ANNOUNCEMENT INFO.; Applied Physics Letters, 105, 16, 162107
    AUTHOR; F. Zhang, K. Saito, T. Tanaka, M. Nishio, M. Arita, Q. Guo
  • Thermal Annealing Impact on Crystal Quality of (GaIn)2O3 Alloys; 2014
    ANNOUNCEMENT INFO.; Journal of Alloys and Compounds, 614, 173-176
    AUTHOR; F. Zhang, K. Saito, T. Tanaka, M. Nishio, Q. Guo
  • Surface morphologies and photoluminescence properties of undoped and P-doped ZnTe layers grown by metalorganic vapor phase epitaxy; 2013
    ANNOUNCEMENT INFO.; Journal of Crystal Growth, 370, 1, 348-352
    AUTHOR; M. Nishio, Y. Hayashida, K. Saito, T. Tanaka, Q. Guo
  • Effects of annealing treatment upon electrical and photoluminescence properties of phosphorus-doped ZnMgTe epilayers grown by metalorganic vapor phase epitaxy; 2013
    ANNOUNCEMENT INFO.; Journal of Crystal Growth, 370, 1, 342-347
    AUTHOR; M. Nishio, K. Kai, R. Fujiki, K. Saito, T. Tanaka, and Q. Guo
  • Photocurrent induced by two-photon excitation in ZnTeO intermediate band solar cells; 2013
    ANNOUNCEMENT INFO.; Applied Physics Letters, 102, 5, 052111
    AUTHOR; T. Tanaka, M. Miyabara, Y. Nagao, K. Saito, Q. Guo, M. Nishio, K.M. Yu, W. Walukiewicz
  • Effects of oxygen gas pressure on properties of iron oxide films grown by pulsed laser deposition; 2013
    ANNOUNCEMENT INFO.; Journal of Alloys and Compounds, 552, 1-5
    AUTHOR; Q. Guo, W. Shi, F. Liu, M. Arita, Y. Ikoma, K. Saito, T. Tanaka,and M. Nishio
  • Band alignment of ZnTe/GaAs heterointerface investigated by synchrotron radiation photoemission spectroscopy; 2013
    ANNOUNCEMENT INFO.; Applied Physics Letters, 102, 9, 092107
    AUTHOR; Q. Guo, K. Takahashi, K. Saito, H. Akiyama, T. Tanaka, and M. Nishio
  • Epitaxial Growth of ZnTe Layers on ZnO Bulk Substrates by Metalorganic Vapor Phase Epitaxy; 2013
    ANNOUNCEMENT INFO.; Japanese Journal of Applied Physics, 52, 040206
    AUTHOR; H. Akiyama, H. Hirano, K. Saito, T. Tanaka, M. Nishio, and Q. Guo
  • Development of ZnTe-Based Solar Cells; 2013
    ANNOUNCEMENT INFO.; Materials Science Forum, 750, 80-83
    AUTHOR; T. Tanaka, M. Miyabara, K. Saito, Q. Guo, M. Nishio, K.M. Yu, and W. Walukiewicz
  • Molecular beam epitaxial growth of ZnCdTeO epilayers for intermediate band solar cells; 2013
    ANNOUNCEMENT INFO.; Journal of Crystal Growth, 378, 259-262
    AUTHOR; T. Tanaka, Y. Nagao, T. Mochinaga, K. Saito, Q. Guo, M. Nishio, K.M. Yu, W. Walukiewicz
  • Nanograin formation of GaAs by high-pressure torsion; 2013
    ANNOUNCEMENT INFO.; Philosophical Magazine Letters, in press
    AUTHOR; Y. Ikoma, Y. Ejiri, K. Hayano, K. Saito, Q. Guo, Z. Horita
  • Development of ZnTe-based solar cells; 2013
    ANNOUNCEMENT INFO.; Materials Science Forum, 750, 80-83
    AUTHOR; Tooru Tanaka, Masaki Miyabara, Katsuhiko Saito, Qixin Guo, Mitsuhiro Nishio, Kin M. Yu, and Wladek Walukiewicz
  • Growth of ZnTe layers on (111) GaAs substrates by metalorganic vapor phase epitaxy; 2012
    ANNOUNCEMENT INFO.; Journal of Crystal Growth, 341, 1, 7-11
    AUTHOR; Q. Guo, H. Akiyama, Y. Mikuriya, K. Saito, T. Tanaka, and M. Nishio
  • Epitaxial growth of ZnO layers on (111) GaAs substrates by laser molecular beam epitaxy; 2012
    ANNOUNCEMENT INFO.; Thin Solid Films, 520, 7, 2663-2666
    AUTHOR; J. Ding, D. Zhang, T. Konomi, K. Saito, and Q. Guo
  • Effects of substrate temperature upon the properties of ZnMgTe layer grown by MOVPE; 2012
    ANNOUNCEMENT INFO.; Applied Surface Science, 258, 6, 2137-2140
    AUTHOR; K. Saito, Y. Inoue, Y. Hayashida, T. Tanaka, Q. X. Guo, and M. Nishio
  • Molecular beam epitaxial growth and optical properties of highly mismatched ZnTe 1-xO x alloys; 2012
    ANNOUNCEMENT INFO.; Applied Physics Letters, 100, 1, 011905
    AUTHOR; T. Tanaka, S. Kusaba, T. Mochinaga, K. Saito, Q. Guo, M. Nishio, K. M. Yu, and W. Walukiewicz
  • Existence and removal of Cu2Se second phase in coevaporated Cu2ZnSnSe4 thin films; 2012
    ANNOUNCEMENT INFO.; Journal of Applied Physics, 111, 5, 053522
    AUTHOR; T. Tanaka, T. Sueishi, K. Saito, Q. Guo, M. Nishio, K. M. Yu, and W. Walukiewicz
  • Characterization of epitaxial ZnTe layers grown on GaAs substrates by transmission electron microscopy and photoluminescence; 2012
    ANNOUNCEMENT INFO.; Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 30, 2, 021508
    AUTHOR; F. Zhang, Y. Ikoma, J. Zhang, K. Xu, K. Saito, and Q. Guo
  • Influence of source transport rate upon phosphorus doping of ZnTe layers grown by MOVPE method; 2012
    ANNOUNCEMENT INFO.; Physica Status Solidi (C) Current Topics in Solid State Physics, 9, 8-9, 1732-1735
    AUTHOR; M. Nishio, X. Han, K. Saito, T. Tanaka, and Q. X.Guo
  • Influence of dopant transport rate upon photoluminescence and electrical properties of phosphorus-doped ZnMgTe layers grown by MOVPE; 2012
    ANNOUNCEMENT INFO.; Physica Status Solidi (C) Current Topics in Solid State Physics, 9, 8-9, 1736-1739
    AUTHOR; K. Saito, T. Saeki, T. Tanaka, Q.X. Guo, and M. Nishio
  • Phase transformation and nanograin refinement of silicon by processing through high-pressure torsion; 2012
    ANNOUNCEMENT INFO.; Applied Physics Letters, 101, 12, 121908
    AUTHOR; Y. Ikoma, K. Hayano, K. Edalati, K. Saito, Q. Guo, and Z. Horita
  • Impact of radio frequency powers on GaInN film growth by magnetron reactive sputtering; 2012
    ANNOUNCEMENT INFO.; Japanese Journal of Applied Physics, 51, 11, 118004
    AUTHOR; Q. Guo, W. Shi, F. Liu, T. Nakao, K. Saito, T. Tanaka, and M. Nishio
  • Growth and characterization of Fe3O4 films; 2011
    ANNOUNCEMENT INFO.; Materials Research Bulletin, 46, 12, 2212-2216
    AUTHOR; J. Ding, D. Zhang, M. Arita, Y. Ikoma, K. Nakamura, K. Saito, and Q. Guo
  • Effect of VI/II ratio upon photoluminescence and electrical properties of phosphorus-doped ZnTe films grown by metalorganic vapor phase epitaxy; 2011
    ANNOUNCEMENT INFO.; Thin Solid Films, 520, 2, 743-746
    AUTHOR; M. Nishio, K. Kai, K. Saito, T. Tanaka, and Q. Guo
  • Electronic structure of GaInN semiconductors investigated by x-ray absorption spectroscopy; 2011
    ANNOUNCEMENT INFO.; Applied Physics Letters, 98, 18, 181901
    AUTHOR; Q. X. Guo, H. Senda, K. Saito, T. Tanaka, M. Nishio, J. Ding, T. X. Fan, D. Zhang, X. Q. Wang, S. T. Liu, B. Shen, and R. Ohtani
  • Structural and optical properties of porous iron oxide; 2011
    ANNOUNCEMENT INFO.; Solid State Communications, 151, 10, 802-805
    AUTHOR; J. Ding, T. Fan, D. Zhang, K. Saito, and Q. Guo
  • Effect of gas flow rate on surface morphology and crystal quality of ZnTe epilayers grown on GaAs substrates; 2011
    ANNOUNCEMENT INFO.; Materials Research Bulletin, 46, 4, 551-554
    AUTHOR; Q. Guo, M. Nada, Y. Ding, K. Saito, T. Tanaka,and M. Nishio
  • Estimation of donor and acceptor levels in Al-doped ZnTe layers from photoluminescence measurement; 2011
    ANNOUNCEMENT INFO.; Proceedings of SPIE - The International Society for Optical Engineering, 7995, 79950I
    AUTHOR; K. Saito, T. Saeki, X. Han, T. Tanaka, Q. Guo, and M. Nishio
  • Temperature dependence of electrical properties for P-doped ZnMgTe bulk crystals of high quality grown by Bridgman method; 2011
    ANNOUNCEMENT INFO.; Journal of Crystal Growth, 318, 1, 524-527
    AUTHOR; M. Nishio, K. Hiwatashi, K. Saito, T. Tanaka, and Q. Guo
  • Temperature dependence of photoluminescence from P-doped ZnMgTe bulk crystals of high quality grown by Bridgman method; 2010
    ANNOUNCEMENT INFO.; Physica Status Solidi (C) Current Topics in Solid State Physics, 7, 6, 1495-1497
    AUTHOR; K. Saito, S. Shimao, T. Tanaka, Q. Guo, and M. Nishio
  • Influence of composition ratio on properties of Cu2ZnSnS 4 thin films fabricated by co-evaporation; 2010
    ANNOUNCEMENT INFO.; Thin Solid Films, 518, 21 SUPPL., S29-S33
    AUTHOR; T. Tanaka, A. Yoshida, D. Saiki, K. Saito, Q. Guo, M. Nishio, and T. Yamaguchi
  • Post-annealing effect upon electrical and optical properties of MOVPE grown P-doped ZnTe homoepitaxial layers; 2009/01
    ANNOUNCEMENT INFO.; Journal of Materials Science: Materials in Electronics, 20, Supplement 1, 264-267
    AUTHOR; K. Saito, K. Yamaguchi, T. Tanaka, M. Nishio, Q. Guo, and H. Ogawa
  • Fabrication of a ZnTe light emitting diode by Al thermal diffusion into a p -ZnTe epitaxial layer on a p -ZnMgTe substrate; 2009
    ANNOUNCEMENT INFO.; Journal of Materials Science: Materials in Electronics, 20, Supplement 1, 505-509
    AUTHOR; T. Tanaka, K. Saito, M. Nishio, Q. Guo, and H. Ogawa
  • Enhanced Light Output from ZnTe Light Emitting Diodes by Utilizing Thin Film Structure; 2009
    ANNOUNCEMENT INFO.; Applied Physics Express, 2, 122101
    AUTHOR; T. Tanaka, K. Saito, M. Nishio, Q. Guo, and H. Ogawa
  • Improvement of MOVPE grown ZnTe:P layers by annealing treatment; 2008
    ANNOUNCEMENT INFO.; Journal of Physics: Conference Series, 100, 042019
    AUTHOR; K. Saito, K. Fujimoto, K. Yamaguchi, T. Tanaka, M. Nishio, Q.X. Guo, and H. Ogawa
  • Epitaxial growth of ZnMgTe with a wide composition range on ZnTe substrate by molecular beam epitaxy; 2008
    ANNOUNCEMENT INFO.; Journal of Physics: Conference Series, 100, 042018
    AUTHOR; T. Tanaka, K. Saito, M. Nishio, Q. Guo, and H. Ogawa
  • Growth of undoped ZnMgTe layers by metalorganic vapour phase epitaxy; 2008
    ANNOUNCEMENT INFO.; Journal of Physics: Conference Series, 100, 042028
    AUTHOR; K. Saito, D. Kouno, T. Tanaka, M. Nishio, Q.X. Guo, and H Ogawa
  • Surface morphology of (100) ZnTe: P layer homoepitaxially grown by horizontal MOVPE technique; 2008
    ANNOUNCEMENT INFO.; Proceedings of SPIE, 6984, 69840M
    AUTHOR; K. Yamaguchi, Y. Kuramitsu, K. Saito, T. Tanaka, M. Nishio, Q. Guo, and H. Ogawa
  • Multilayer polarization elements and their applications to polarimetric studies in vacuum ultraviolet and soft X-ray regions; 2008
    ANNOUNCEMENT INFO.; Nuclear Science and Techniques, 19, 4, 193-203
    AUTHOR; M. Watanabe, T. Hatano, K. Saito, W. Hu, T. Ejima, T. Tsuru, M. Takahashi, H. Kimura, T. Hirono, Z. Wang, M. Cui, M. Yamamoto, and M. Yanagihara
  • Growth characteristics of ZnMgTe layer on ZnTe substrate by metalorganic vapor phase epitaxy; 2007
    ANNOUNCEMENT INFO.; Journal of Crystal Growth, 298, 449-452
    AUTHOR; K. Saito, T. Yamashita, D. Kouno, T. Tanaka, M. Nishio, Q. Guo, and H. Ogawa
  • Study of Al thermal diffusion in ZnTe using secondary ion mass spectroscopy; 2007
    ANNOUNCEMENT INFO.; physica status solidi (b), 244, 5, 1634-1638
    AUTHOR; T. Tanaka, N. Murata, K. Saito, M. Nishio, Q. Guo, and H. Ogawa
  • Post-annealing effect upon phosphorus-doped ZnTe homoepitaxial layers grown by MOVPE; 2007
    ANNOUNCEMENT INFO.; physica status solidi (b), 244, 5, 1634-1638
    AUTHOR; K. Saito, K. Fujimoto, K. Yamaguchi, T. Tanaka, M. Nishio, Q. Guo, and H. Ogawa
  • Effect of surface treatment on properties of ZnTe LED fabricated by Al thermal diffusion; 2006
    ANNOUNCEMENT INFO.; physica status solidi (b), 243, 4, 959-962
    AUTHOR; T. Tanaka, K. Hayashida, K. Saito, M. Nishio, Q. Guo, and H. Ogawa
  • Phosphorus-doped ZnMgTe bulk crystals grown by Vertical Bridgman Method; 2006
    ANNOUNCEMENT INFO.; physica status solidi (b), 3, 4, 812-816
    AUTHOR; K. Saito, K. Kinoshita, T. Tanaka, M. Nishio, Q. Guo, and H. Ogawa
  • Growth of boron-doped ZnTe homoepitaxial layer by metalorganic vapor phase epitaxy; 2006
    ANNOUNCEMENT INFO.; physica status solidi (c), 3, 4, 833-836
    AUTHOR; K. Saito, T. Yamashita, T. Tanaka, M. Nishio,Q. Guo, and H. Ogawa
  • Optical and Electrical Properties of Phosphorus-Doped ZnMgTe Bulk Crystals Grown by Bridgman Method; 2006
    ANNOUNCEMENT INFO.; physica status solidi (c), 3, 8, 2673-2676
    AUTHOR; K. Saito, G. So, T. Tanaka, M. Nishio, Q. Guo, and H. Ogawa
  • Synchrotron radiation-excited etching of ZnTe using Ar gas; 2005/08
    ANNOUNCEMENT INFO.; Nuclear Instruments and Methods in Physics Research Section B, 238, 1-4, 115-118
    AUTHOR; T. Tanaka, Y. Kume, K. Hayashida, K. Saito, M. Nishio, Q. Guo, and H. Ogawa
  • Magnetic rotation spectra of Co/Pt and Co/Cu multilayers in 50-90 eV region; 2005
    ANNOUNCEMENT INFO.; Journal of Electron Spectroscopy and Related Phenomena, 144-147, 757-760
    AUTHOR; K. Saito, M. Igeta, T. Ejima, T. Hatano, A. Arai, and M. Watanabe
  • Aging and thermal stability of Mg/SiC and Mg/Y2O3 reflection multilayers in the 25-35 nm region; 2005
    ANNOUNCEMENT INFO.; Applied Optics, 44, 26, 5446-5453
    AUTHOR; T. Ejima, A. Yamazaki, T. Banse, K. Saito, Y. Kondo, S. Ichimaru, and H. Takenaka
  • Polarization measurements of laboratory VUV light: a first comparison between multilayer polarizers and photoelectron angular distributions; 2003
    ANNOUNCEMENT INFO.; Journal of Electron Spectroscopy and Related Phenomena, 130, 1-3, 79-84
    AUTHOR; M. Takahashi, T. Hatano, T. Ejima, Y. Kondo, K. Saito, M. Watanabe, T. Kinugawa, and J. H. D. Eland
  • Faraday and Magnetic Kerr Rotation Measurements on Co and Ni Films Around M2,3 Edges; 2002
    ANNOUNCEMENT INFO.; Surface Review and Letters, 9, 2, 943-947
    AUTHOR; K. Saito, M. Igeta, T. Ejima, T. Hatano, and M. Watanabe
  • Multilayer Polarizers for the Use of He-I and He-II Resonance Lines; 2002
    ANNOUNCEMENT INFO.; Surface Review and Letters, 9, 1, 587-591
    AUTHOR; T. Hatano, Y. Kondo, K. Saito, T. Ejima, M. Watanabe, and M. Takahashi
  • High-Reflection Multilayer for Wavelength Range of 200-30 nm; 2001
    ANNOUNCEMENT INFO.; Nuclear Instruments and Methods in Physics Research Section A, 467-468, 333-337
    AUTHOR; Y. Kondo, T. Ejima, K. Saito, T. Hatano, and M. Watanabe
  • Faraday Rotation Measurement around Ni M2,3 Edges Using Al/YB6 Multilayer Polarizers; 1999
    ANNOUNCEMENT INFO.; Journal of Electron Spectroscopy and Related Phenomena, 101–103, 287-291
    AUTHOR; T. Hatano, W. Hu, K. Saito, and M. Watanabe

General Lectures

  • Growth of Al-doped ZnCdO thin films on MgO substrates by molecular beam epitaxy; 2019/03
    ANNOUNCEMENT INFO.; 2019年第66回応用物理学会春季学術講演会, 東京工業大学, 平成31年3月10日, 10a-W922-5
    AUTHOR; HyoChang Jang, Kento Matsuo, Katsuhiko Saito, Qixin Guo, Tooru Tanaka
  • MBE によるCl ドープZnCdTeO 層の膜特性の組成依存性; 2019/03
    ANNOUNCEMENT INFO.; 2019年第66回応用物理学会春季学術講演会, 東京工業大学, 平成31年3月10日, 10a-W922-6
    AUTHOR; 
  • InPをドーパント源に用いたPドープZnTe薄膜のMBE成長; 2019/03
    ANNOUNCEMENT INFO.; 2019年第66回応用物理学会春季学術講演会, 東京工業大学, 平成31年3月10日, 10a-W922-7
    AUTHOR; 
  • 分子線エピタキシー法を用いたGaAs(100)基板上へのZnSe 薄膜成長; 2018/12
    ANNOUNCEMENT INFO.; 平成30年度応用物理学会九州支部学術講演会, 福岡大学, 平成30年12月8日, 8Ca-1
    AUTHOR; 
  • 分子線エピタキシー法によるP ドープZnTe 薄膜の成長と評価; 2018/12
    ANNOUNCEMENT INFO.; 平成30年度応用物理学会九州支部学術講演会, 福岡大学, 平成30年12月8日, 8Ca-2
    AUTHOR; 
  • 減圧MOVPE 法による(100)GaAs 基板上へのZnMgSeTe 薄膜成長; 2018/12
    ANNOUNCEMENT INFO.; 平成30年度応用物理学会九州支部学術講演会, 福岡大学, 平成30年12月8日, 8Ca-3
    AUTHOR; 
  • Cl ドープZnTeO 中間バンド型太陽電池における光電変換特性の酸素濃度及び温度依存性; 2018/12
    ANNOUNCEMENT INFO.; 平成30年度応用物理学会九州支部学術講演会, 福岡大学, 平成30年12月8日, 8Ca-4
    AUTHOR; 
  • RF スパッタリング法によるGaN を用いたInGaN 薄膜成長に関する研究; 2018/12
    ANNOUNCEMENT INFO.; 平成30年度応用物理学会九州支部学術講演会, 福岡大学, 平成30年12月8日, 8Ca-5
    AUTHOR; 
  • 酸素ラジカル源を用いたPLD 法によるサファイア基板上へのSi ドープGa2O3 薄膜の作製と評価; 2018/12
    ANNOUNCEMENT INFO.; 平成30年度応用物理学会九州支部学術講演会, 福岡大学, 平成30年12月8日, 8Ap-1
    AUTHOR; 
  • 酸素ラジカル源を用いたPLD 法によるα-Al2O3 基板上へのTm ドープGa2O3 薄膜の成長と評 価; 2018/12
    ANNOUNCEMENT INFO.; 平成30年度応用物理学会九州支部学術講演会, 福岡大学, 平成30年12月8日, 8Ap-2
    AUTHOR; 
  • Characterization of Al-doped ZnCdO thin films on MgO substrates by molecular beam epitaxy; 2018/12
    ANNOUNCEMENT INFO.; The 3rd Asian Applied Physics Conference (Asian-APC), 8 December, 2018, Fukuoka, 8Po-5
    AUTHOR; HyoChang Jang, Kento Matsuo, Tooru Tanaka, Katsuhiko Saito and Qixin Guo
  • Effect of oxygen flow rate and temperature on Cu4O3 Thin Films by Radio Frequency Sputtering; 2018/12
    ANNOUNCEMENT INFO.; The 3rd Asian Applied Physics Conference (Asian-APC), 8 December, 2018, Fukuoka, 8Po-6
    AUTHOR; Md Abdul Majed Patwary, Tooru Tanaka, Katsuhiko Saito, Qixin Guo, Kin Man Yu, and Wladek Walukiewicz
  • HPT加工を施したバルクナノ結晶粒シリコンの電子状態変化; 2018/09
    ANNOUNCEMENT INFO.; 
    AUTHOR; 
  • Growth and characterization of CdZnO thin films on sapphire substrates by MBE; 2018/09
    ANNOUNCEMENT INFO.; 20th International Conference on Molecular Beam Epitaxy, September 4, 2018, Shanghai, China, Tu-C2-1
    AUTHOR; HyoChang Jang, Tooru Tanaka, Katsuhiko Saito, Qixin Guo, Kin Man Yu, Yeonbae Lee, and Wladek Walukiewicz
  • Growth of P-doped ZnTe epilayers on ZnTe substrates by molecular beam epitaxy; 2018/09
    ANNOUNCEMENT INFO.; 20th International Conference on Molecular Beam Epitaxy, September 4, 2018, Shanghai, China, Tu-P-20
    AUTHOR; K. Matsuo, Y. Watanabe, T. Tanaka, K. Saito, Y. Nose, Q. Guo, K. M. Yu, and W. Walukiewicz
  • ClドープZnTeO中間バンド型太陽電池における光電変換特性の酸素濃度依存性; 2018/09
    ANNOUNCEMENT INFO.; 2018年第79回応用物理学会秋季学術講演会, 19p-PB5-13, 名古屋国際会議場, 2018年9月19日
    AUTHOR; 
  • SnSeを用いたセレン化法によるCu2ZnSnSe4薄膜の作製と評価; 2018/09
    ANNOUNCEMENT INFO.; 2018年第79回応用物理学会秋季学術講演会, 21p-431B-1, 名古屋国際会議場, 2018年9月21日
    AUTHOR; 
  • MOVPE growth of ZnMgSeTe alloys on (100) GaAa substrates; 2018/06
    ANNOUNCEMENT INFO.; 19th International Conference on Metalorganic Vapor Phase Epitaxy
    AUTHOR; Katsuhiko Saito,Yusei Matsuo, Akihiro Tomota, Tatsuki Hamada, Yuken Oishi, Tooru Tanaka,and Qixin Guo
  • Production of bulk nanograined Si by high-pressure torsion at various pressures; 2018/03
    ANNOUNCEMENT INFO.; TMS2018 147th Annual Meeting & Exhibition
    AUTHOR; Yoshifumi Ikoma, Terumasa Yamasaki, Katsuhiko Saito, Qixin Guo, Zenji Horita
  • MBE成長によるZnTe薄膜へのPドーピング; 2018/03
    ANNOUNCEMENT INFO.; 2018年第65回応用物理学会春季学術講演会, 早稲田大学, 平成30年3月20日, 20a-F210-2
    AUTHOR; 
  • Synthesis of Cl-doped ZnTeO for Intermediate Band Solar Cells; 2016/12
    ANNOUNCEMENT INFO.; 
    AUTHOR; S. Tsutsumi, Y. Okano, T. Tanaka, K. Saito, Q. Guo, M. Nishio, K. M. Yu, and W. Walukiewicz
  • Crystal growth of gallium oxide based wide bandgap semiconductors; 2016/10
    ANNOUNCEMENT INFO.; International conference on applied crystallography, October 17-19, 2016, Houston, USA, Oct. 18 16:45-17:10
    AUTHOR; Qixin Guo, Katsuhiko Saito, Tooru Tanaka, Mitsuhiro Nishio
  • Growth of Zn1-xCdxTe1-yOy (x=0.2~0.5) highly mismatched alloys for intermediate band solar cells; 2016/10
    ANNOUNCEMENT INFO.; 26th edition of the International Photovoltaic Science and Engineering Conference (PVSEC-26), 26 October 2016, Singapore.
    AUTHOR; T. Tanaka, T. Terasawa, Y. Okano, S. Tsutsumi, K. Saito, Q. Guo, M. Nishio, K. M. Yu, and W. Walukiewicz
  • Epitaxial growth of Ga2O3:Er films on silicon substrate; 2016/08
    ANNOUNCEMENT INFO.; The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18), August 7-12, 2016, Nagoya, MoP-G04.
    AUTHOR; Z. Chen, K. Saito, T. Tanaka, M. Nishio, M. Arita, Q. Guo
  • Low temperature growth of ZnO/MgZnO single quantum well; 2016/08
    ANNOUNCEMENT INFO.; The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18), August 7-12, 2016, Nagoya, ThP-T04.
    AUTHOR; X. Wang, K. Saito, T. Tanaka, M. Nishio, Q.-X. Guo
  • Growth of ZnMgSeTe nearly Lattice-matched to ZnTe and p-type Doping by Low-pressure MOVPE; 2016/08
    ANNOUNCEMENT INFO.; The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18), August 7-12, 2016, Nagoya, ThP-T04-10.
    AUTHOR; K. Saito, M. Nishio, Y. Nakatsuru, T. Shono, Y.Matsuo, A. Tomota, T. Tanaka, and Q. X. Guo
  • Photoluminescence and Electrical Properties of P-doped ZnTe Layers Grown by Low Pressure MOVPE; 2016/08
    ANNOUNCEMENT INFO.; The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18), August 7-12, 2016, Nagoya, ThP-T04-11.
    AUTHOR; M. Nishio, K. Saito, Y. Nakatsuru, T. Shono, Y.Matsuo, A. Tomota, T. Tanaka, and Q. X. Guo
  • Green Electroluminescence from Er Doped Gallium Oxide/Silicon Heterostructured Light Emitting Device; 2016/06
    ANNOUNCEMENT INFO.; 58th Electronic Materials Conference, June 22-24, 2016, University of Delaware, Newark, DE, June 22, PS7.
    AUTHOR; Qixin Guo, Zhenwei Chen, Shinji Noda, Katsuhiko Saito, Tooru Tanaka, and Mitsuhiro Nishio
  • Cl-doping in Highly Mismatched ZnTe1-xOx Alloys for Intermediate Band Solar Cells; 2016/02
    ANNOUNCEMENT INFO.; 43rd IEEE Photovoltaic Specialists Conference (PVSC-43), June 9, 2016, Portland. 772.
    AUTHOR; T. Tanaka, S. Tsutsumi, Y. Okano, K. Saito, Q. Guo, M. Nishio, K. M. Yu, and W. Walukiewicz
  • Si-Doped Ga2O3 Films Grown by Pulsed Laser Deposition; 2015/11
    ANNOUNCEMENT INFO.; International Workshop on Gallium Oxide and Related Materials 2015, E29, November 3-6, 2015, Kyoto
    AUTHOR; F. Zhang, K. Saito, T. Tanaka, M. Nishio, and Q. Guo
  • The Effect of Growth Temperature on Structural and Optical Properties of Europium Doped Ga2O3 Films; 2015/11
    ANNOUNCEMENT INFO.; International Workshop on Gallium Oxide and Related Materials 2015, E30, November 3-6, 2015, Kyoto
    AUTHOR; Z. Chen, K. Saito, T. Tanaka, M. Nishio, and Q. Guo
  • Effect of Substrate Temperature on Structures and Optical Properties of (AlGa)2O3 Films; 2015/11
    ANNOUNCEMENT INFO.; International Workshop on Gallium Oxide and Related Materials 2015, E33, November 3-6, 2015, Kyoto
    AUTHOR; X. Wang, K. Saito, T. Tanaka, M. Nishio, and Q. Guo
  • Influence of Source Transport Rate upon Compositions of Mg and Se in Zn1-xMgxSeyTe1-y Layers grown by Metalorganic Vapor Phase Epitaxy; 2015/09
    ANNOUNCEMENT INFO.; The 17th International Conference on II-VI Compounds and Related Materials 13-18 Sept. 2015 Paris MOP-21
    AUTHOR; K. Saito, M. Abiru, E. Mori, Y. Araki, D. Tanaka, T. Tanaka, Q.X. Guo, and M. Nishio
  • Low Pressure MOVPE Growth and Characterization of ZnTe Homoepitaxial Layers; 2015/09
    ANNOUNCEMENT INFO.; The 17th International Conference on II-VI Compounds and Related Materials 13-18 Sept. 2015 Paris MOP-23
    AUTHOR; M. Nishio, K. Saito, M. Abiru, E. Mori, Y. Araki, D. Tanaka, T. Tanaka, Q.X. Guo
  • Growth and Characterization of Zn-MgSeTe Epilayers on ZnTe Substrates by Molecular Beam Epitaxy; 2013/09
    ANNOUNCEMENT INFO.; The 16th International Conference on II-VI Compounds and Related Materials, Nagahama Royal Hotel, Nagahama, Japan, September 9 - 13, 2013. Tu-P13.
    AUTHOR; Kosuke Mizoguchi, Yasuhiro Nagao, Tooru Tanaka, Katsuhiko Saito, Qixin Guo, and Mitsuhiro Nishio
  • Correlation Between Photoluminescence and Carrier Concentration in Phosphorus-doped ZnTe; 2013/09
    ANNOUNCEMENT INFO.; The 16th International Conference on II-VI Compounds and Related Materials, Nagahama Royal Hotel, Nagahama, Japan, September 9 - 13, 2013. We-P27.
    AUTHOR; Katsuhiko Saito, Ryosuke Ito, Kento Tanaka, Kensuke Urata, Yasuaki Nakamura, Tooru Tanaka, Qixin Guo, and Mitsuhiro Nishio
  • Molecular Beam Epitaxy of n-ZnS Epilayers for ZnTe Solar Cell Application; 2013/09
    ANNOUNCEMENT INFO.; The 16th International Conference on II-VI Compounds and Related Materials, Nagahama Royal Hotel, Nagahama, Japan, September 9 - 13, 2013. We-P15.
    AUTHOR; Shin Haraguchi, Masaki Miyabara, Tooru Tanaka, Katsuhiko Saito, Qixin Guo, Mitsuhiro Nishio, Kin Man Yu, and Wladek Walukiewicz
  • Growth and Characterization of Zn1-xMgxSeyTe1-y on ZnTe Substrate by Metalorganic Vapor Phase Epitaxy; 2013/09
    ANNOUNCEMENT INFO.; The 16th International Conference on II-VI Compounds and Related Materials, Nagahama Royal Hotel, Nagahama, Japan, September 9 - 13, 2013. We-P13.
    AUTHOR; Mitsuhiro Nishio, Katsuhiko Saito, Ryosuke Ito, Kento Tanaka, Kensuke Urata, Yasuaki Nakamura, Tooru Tanaka, and Qixin Guo
  • Fabrication of ZnO/ZnTe Heterojunction by Using a Room Temperature Direct Bonding Technology; 2013/09
    ANNOUNCEMENT INFO.; The 16th International Conference on II-VI Compounds and Related Materials, Nagahama Royal Hotel, Nagahama, Japan, September 9 - 13, 2013. We-P10.
    AUTHOR; Hajime Akiyama, Katsuhiko Saito, Tooru Tanaka, Mitsuhiro Nishio, and Qixin Guo
  • Growth of GaInN films on silicon substrates by reactive sputtering; 2013/07
    ANNOUNCEMENT INFO.; The 12th International Symposium on Sputtering and Plasma Processes, Kyoto Research Park, July 10-12, 2013, TF P1-1.
    AUTHOR; Q. Guo, T. Nakao, T. Ushijima, K. Saito, T. Tanaka, M. Nishio
  • シンクロトロン放射光電子分光法によるZnTe/GaAsへテロ界面のバンドアライメント評価; 2013/07
    ANNOUNCEMENT INFO.; 
    AUTHOR; 
  • Characterization of ZnTe layers on (0001) ZnO substrates by metalorganic vapor phase epitaxy; 2013/05
    ANNOUNCEMENT INFO.; The 40th International Symposium on Compound Semiconductors, May 19-23, 2013, Kober Convention Center, Kobe, Japan, MoPC-01-09.
    AUTHOR; Hajime Akiyama, Tooru Idekoba, Katsuhiko Saito, Tooru Tanaka, Mitsuhiro Nishio, and Qixin Guo
  • Growth of Gallium Oxide Films by Pulsed Laser Deposition; 2013/05
    ANNOUNCEMENT INFO.; The 40th International Symposium on Compound Semiconductors, May 19-23, 2013, Kober Convention Center, Kobe, Japan, MoPC-07-08.
    AUTHOR; Qixin Guo, Fabi Zhang, Kouji Wakamatsu, Katsuhiko Saito, Tooru Tanaka, and Mitsuhiro Nishio
  • Al電極の透明化により作製されたZnTe緑色LEDの特性; 2012/12
    ANNOUNCEMENT INFO.; 
    AUTHOR; 
  • ZnTe緑色LEDの為のAl電極のエッチング; 2012/12
    ANNOUNCEMENT INFO.; 
    AUTHOR; 
  • 分子線エピタキシー法によりZnTe基板上に成長させたn型ZnS薄膜の作製と評価; 2012/12
    ANNOUNCEMENT INFO.; 
    AUTHOR; 
  • MOVPE法による(111)GaAs基板上へのZnTe薄膜成長及び特性評価; 2012/12
    ANNOUNCEMENT INFO.; 
    AUTHOR; 
  • ZnCdTeOを用いた中間バンド型太陽電池の作製と評価; 2012/12
    ANNOUNCEMENT INFO.; 
    AUTHOR; 
  • MOVPE法により成長されたPドープZn1-xMgxTeエピ膜の電気的性質及びフォトルミネッセンス特性に及ぼすアニール処理効果; 2012/12
    ANNOUNCEMENT INFO.; 
    AUTHOR; 
  • 有機金属気相エピタキシャル法で成長されたZnTe膜の燐ドーピングに及ぼす原料供給量の影響; 2012/12
    ANNOUNCEMENT INFO.; 
    AUTHOR; 
  • MOVPE法で作製されたZnTe薄膜の表面形態とフォトルミネッセンス特性; 2012/12
    ANNOUNCEMENT INFO.; 
    AUTHOR; 
  • 多源蒸着法によるCu2ZnSnSe4薄膜太陽電池におけるKCNエッチング効果; 2012/12
    ANNOUNCEMENT INFO.; 
    AUTHOR; 
  • PLD法によりα-Al2O3基板上に作成したGa2O3薄膜の評価; 2012/12
    ANNOUNCEMENT INFO.; 
    AUTHOR; 
  • RFスパッタリング法によるSi基板上のInGaN薄膜成長に関する研究; 2012/12
    ANNOUNCEMENT INFO.; 
    AUTHOR; 
  • ZnTeO中間バンド型太陽電池における二段階光吸収による電流生成; 2012/10
    ANNOUNCEMENT INFO.; 
    AUTHOR; 
  • 酸素イオン注入によるマルチバンドギャップ半導体ZnTe1-xOxの作製と光学特性の評価; 2012/10
    ANNOUNCEMENT INFO.; 
    AUTHOR; 
  • α-Al2O3基板上へのPLD法によるGa2O3薄膜作製と評価; 2012/09
    ANNOUNCEMENT INFO.; 
    AUTHOR; 
  • MOVPE法によるZnO基板上ZnTe薄膜の作製と評価; 2012/09
    ANNOUNCEMENT INFO.; 
    AUTHOR; 
  • Molecular beam epitaxial growth of ZnCdTeO epilayers for intermediate band solar cells; 2012/09
    ANNOUNCEMENT INFO.; The 17th International Conference on Molecular Beam Epitaxy, September 23-28, 2012, Nara, TuP-22.
    AUTHOR; Y. Nagao, T. Mochinaga, T. Tanaka, K. Saito, Q. Guo, M. Nishio, K.M. Yu, and W. Walukiewicz
  • ZnTeO中間バンド型太陽電池の作製と特性評価; 2012/09
    ANNOUNCEMENT INFO.; 
    AUTHOR; 
  • Development of ZnTe-based solar cells; 2012/08
    ANNOUNCEMENT INFO.; 8th International Forum on Advanced Material Science and Technology (IFAMST-8), Fukuoka, August 1-4, 2012, 2P-PS28.
    AUTHOR; M. Miyabara, T. Tanaka, K. Saito, Q. Guo, M. Nishio, K. M. Yu, W. Walukiewicz
  • Growth of ZnTe Layers on (0001) ZnO Substrates by metalorganic vapor phase epitaxy; 2012/08
    ANNOUNCEMENT INFO.; 8th International Forum on Advanced Material Science and Technology (IFAMST-8), Fukuoka, August 1-4, 2012, 3A-OS01-06.
    AUTHOR; H. Akiyama, H. Hirano, T. Konomi, K. Saito, T. Tanaka, M. Nishio, Q. Guo
  • Synchrotron-Radiation-Excited UV-VIS Luminescence Experimental Station at Saga University beamline BL13: Design and Installation Progress; 2012/08
    ANNOUNCEMENT INFO.; 8th International Forum on Advanced Material Science and Technology (IFAMST-8), Fukuoka, August 1-4, 2012, 2P-PS20.
    AUTHOR; K. Saito, T. Tanaka, M. Nishio, Q. Guo
  • Synthesis and Optical Properties of ZnTe1-xOx Highly Mismatched Alloys for Intermediate Band Solar Cells; 2012/06
    ANNOUNCEMENT INFO.; 37th IEEE Photovoltaic Specialists Conference, June 3-8, 2012, Austin, Texas.
    AUTHOR; T. Tanaka, T. Mochinaga, K. Saito, Q. Guo, M. Nishio, K. M. Yu, W. Walukiewic
  • Influence of (MeCp)2Mg Transport Rate upon Growth of Phosphorus-doped ZnMgTe Layers by MOVPE; 2012/05
    ANNOUNCEMENT INFO.; 16th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-XVI), May 20-25, 2012, Busan, Korea, TuP-62.
    AUTHOR; K. Saito, K. Sekioka, T. Tanaka, Q. Guo, and M. Nishio
  • Surface Morphologies and Photoluminescence Properties of Undoped and P-doped ZnTe Layers Grown by Metaloroganic Vapor Phase Epitaxy; 2012/05
    ANNOUNCEMENT INFO.; 16th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-XVI), May 20-25, 2012, Busan, Korea, TuP-63.
    AUTHOR; M. Nishio, Y. Hayashida, K. Saito, T. Tanaka, and Q. Guo
  • Effects of Annealing Treatment upon Electrical and Photoluminescence Properties of Phosphorus-Doped ZnMgTe Epilayers Grown by Metaloroganic Vapor Phase Epitaxy; 2012/05
    ANNOUNCEMENT INFO.; 16th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-XVI), May 20-25, 2012, Busan, Korea, ThB1-4.
    AUTHOR; M. Nishio, K. Kai, R. Fujiki, K. Saito, T. Tanaka, and Q. Guo
  • Characterization of ZnTe Epilayers on GaAs (111) Substrates by Metalorganic Vapor Phase Epitaxy; 2012/05
    ANNOUNCEMENT INFO.; 16th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-XVI), May 20-25, 2012, Busan, Korea, TuP-59.
    AUTHOR; Q. Guo, H. Akiyama, H. Hirano, K. Saito, T. Tanaka, and M. Nishio
  • ZnCdTeOのMBE成長と物性評価; 2012/03
    ANNOUNCEMENT INFO.; 
    AUTHOR; 
  • MOLECULAR BEAM EPITAXIAL GROWTH OF ZnTe1-XOX LAYERS FOR INTERMEDIATE BAND SOLAR CELL APPLICATIONS; 2011/12
    ANNOUNCEMENT INFO.; 21st International Photovoltaic Science and Engineering Conference (PVSEC-21), 3D-5P-35, November 28-December 2, 2011, Fukuoka.
    AUTHOR; T. Tanaka, S. Kusaba, T. Mochinaga, K. Saito, Q. Guo, M. Nishio, K. M. Yu, and W. Walukiewicz
  • COMPOSITION DEPENDENCE OF ELECTRICAL PROPERTIES OF CU2ZNSNSE4 THIN FILMS FABRICATED BY CO-EVAPORATION; 2011/12
    ANNOUNCEMENT INFO.; 21st International Photovoltaic Science and Engineering Conference (PVSEC-21), 4D-3P-14, November 28-December 2, 2011, Fukuoka.
    AUTHOR; T. Sueishi, T. Tanaka, K. Saito, Q. Guo, M. Nishio, K. M. Yu, W. Walukiewicz
  • GaAs(111)基板上へPLD法によるZnO薄膜作製; 2011/11
    ANNOUNCEMENT INFO.; 
    AUTHOR; 
  • 酸素イオン注入により作製したZnTeO薄膜の評価; 2011/11
    ANNOUNCEMENT INFO.; 
    AUTHOR; 
  • MBE法によるZnCdTe成長と物性評価; 2011/11
    ANNOUNCEMENT INFO.; 
    AUTHOR; 
  • MOVPE法による(111)GaAs基板上のZnTe薄膜の作製と評価; 2011/11
    ANNOUNCEMENT INFO.; 
    AUTHOR; 
  • 分子線エピタキシー法により形成したZnTeO薄膜の光学特性; 2011/09
    ANNOUNCEMENT INFO.; 
    AUTHOR; 
  • ZnTeO薄膜の分子線エピタキシャル成長と評価; 2011/09
    ANNOUNCEMENT INFO.; 
    AUTHOR; 
  • 有機金属気相成長法によるZnTeヘテロエピタキシャル薄膜のGaAs(111)基板上への作製及び特性評価; 2011/09
    ANNOUNCEMENT INFO.; 
    AUTHOR; 
  • PLD法によるAl2O3(001)基板上へのFe3O4薄膜作製; 2011/09
    ANNOUNCEMENT INFO.; 
    AUTHOR; 
  • ZnTe緑色LEDのAl電極透明化の為のAlエッチング特性; 2011/09
    ANNOUNCEMENT INFO.; 
    AUTHOR; 
  • Cu2ZnSnSe4薄膜におけるCu2Se相の選択エッチングに関する研究; 2011/09
    ANNOUNCEMENT INFO.; 
    AUTHOR; 
  • PドープZnMgTeエピ膜のフォトルミネッセンスに及ぼすアニール時の温度、時間、雰囲気ガスの効果; 2011/09
    ANNOUNCEMENT INFO.; 
    AUTHOR; 
  • RFスパッタリング法により作製されたInGaN薄膜の特性評価; 2011/09
    ANNOUNCEMENT INFO.; 
    AUTHOR; 
  • PドープZn1-xMgxTeバルク結晶の電気的特性の測定温度依存性、ラマンスペクトルのMg組成依存性; 2011/09
    ANNOUNCEMENT INFO.; 
    AUTHOR; 
  • MOVPE法によって成長されたPドープZnMgTeエピ膜の電気的性質に及ぼすアニール時の温度、時間、雰囲気ガスの効果; 2011/09
    ANNOUNCEMENT INFO.; 
    AUTHOR; 
  • 透明導電膜を用いたZnTe太陽電池の作製と評価; 2011/09
    ANNOUNCEMENT INFO.; 
    AUTHOR; 
  • PドープZnMgTeエピ膜の成長特性に及ぼすDETe供給量依存性; 2011/09
    ANNOUNCEMENT INFO.; 
    AUTHOR; 
  • PドープZnMgTeエピ膜の電気的性質に及ぼすTDMAP供給量効果; 2011/09
    ANNOUNCEMENT INFO.; 
    AUTHOR; 
  • Influence of dopant transport rate upon photoluminescence and electrical properties of phosphorus-doped ZnMgTe layers grown by MOVPE; 2011/08
    ANNOUNCEMENT INFO.; 15th International Conference on II-VI Compounds, August 21-26, 2011, Mayan Riviera, Mexico, Tu-P04.
    AUTHOR; K. Saito, T. Saeki, T. Tanaka, Q.X. Guo, and M. Nishio
  • Influence of source transport rate upon phosphorus doping in ZnTe layer grown by MOVPE; 2011/08
    ANNOUNCEMENT INFO.; 15th International Conference on II-VI Compounds, August 21-26, 2011, Mayan Riviera, Mexico, Thu-P03.
    AUTHOR; M. Nishio, X. Han, K. Saito, T. Tanaka, Q.X. Guo
  • Fundamental properties of sputtered InGaN films; 2011/07
    ANNOUNCEMENT INFO.; The Eleventh International Symposium on Sputtering & Plasma Processes, July 6-8, 2011, Kyoto, Japan, TF P1-20.
    AUTHOR; Q. X. Guo, H. Senda, K. Saito, T. Tanaka, M. Nishio, J. Ding, T. Fan, and D. Zhang
  • 酸素イオン注入により形成したZnTeOの光学特性と中間バンド太陽電池応用; 2011/06
    ANNOUNCEMENT INFO.; 
    AUTHOR; 
  • 酸素イオン注入により形成したZnTeOの光学特性; 2011/03
    ANNOUNCEMENT INFO.; 
    AUTHOR; 
  • Growth of ZnTe nanowires by molecular beam exitaxy; 2011/03
    ANNOUNCEMENT INFO.; International colloquium on “Recent progress in nanofabrications of MEMS and NEMS: Science and innovation technologies”, Hakata, Fukuoka, March 24, 2010.
    AUTHOR; T. Mochinaga, H. Ohshita, T. Tanaka, K. Saito, Q. Guo, and M. Nishio
  • Al熱拡散を用いたZnTeホモ接合太陽電池の作製と評価; 2011/03
    ANNOUNCEMENT INFO.; 
    AUTHOR; 

Application of Intellectual Property Rights

  • 半導体装置及びその製造方法; 2007/09
    ANNOUNCEMENT INFO.; 
    AUTHOR; 
  • 半導体の製造方法; 2006/08
    ANNOUNCEMENT INFO.; 
    AUTHOR; 

Invited Lecture, Special Lecture

  • Microstructural and Optical Properties of Nanograined Si Processed by High-Pressure Torsion; 2018/08
    ANNOUNCEMENT INFO.; The 5th International Conference on Nanomechanics and Nanocomposites (ICNN5)
    AUTHOR; Yoshifumi Ikoma, Bumsoo Chon, Terumasa Yamasaki, Katsuhiko Saito, Qixin Guo, Martha R. McCartney, David J. Smith, Zenji Horita
  • Heteroepitaxial growth of ZnTe layers by MOVPE (Invited Talk); 2012/12
    ANNOUNCEMENT INFO.; The Collaborative Conference on Crystal Growth 2012, A23, December 12, 2012, 14:00-14:25, Doubletree by Hilton Orlando at SeaWorld, Orlando, FL, USA.
    AUTHOR; Qixin Guo, Katsuhiko Saito, Tooru Tanaka, and Mitsuhiro Nishio
  • Low-temperature Epitaxial Growth of GaInN Films (invited); 2012/08
    ANNOUNCEMENT INFO.; 8th International Forum on Advanced Material Science and Technology (IFAMST-8), Fukuoka, August 1-4, 2012, 3A-OS01-08.
    AUTHOR; Q. Guo, T. Nakao, M. Arita, K. Saito, T. Tanaka, M. Nishio
  • ZnTeO系高不整合材料の作製と中間バンド太陽電池への応用; 2012/05
    ANNOUNCEMENT INFO.; 
    AUTHOR; 
  • STRUCTURAL PROPERTIES OF MAGNETITE FILMS GROWN BY PULSED LASER DEPOSITION (Invited Talk); 2011/07
    ANNOUNCEMENT INFO.; The Nineteenth Annual International Conference on COMPOSITES/NANO ENGINEERING, July 24-30, 2011, Session 2d OXIDE 1, Invited Talk, July 25, Shanghai, China.
    AUTHOR; Q. Guo, K. Nakamura, K. Saito, T. Tanaka, M. Nishio, M. Arita, Y. Ikoma, J. Ding, and D. Zhang


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