Detailed Information

Research Field/Keywords for Research Field

• Synchrotron light, Compound semiconductor, Nanostructure, Optical property

Education

• 1990/03, Graduated
• 1992/03, Master Course, Completed
• 1992/07, Doctor Course, Unfinished course

Employment Experience

• 1992/07 - 1997/05 Research Associate, Faculty of Science and Engineering, Saga University
• 1997/06 - 2007/03 Associate Professor, Faculty of Science and Engineering, Saga University
• 2001/05 - 2001/10 Visiting Researcher
• 2002/01 - 2008/03 Saga University
• 2007/04 - 2007/09 Associate Professor, Faculty of Science and Engineering, Saga University
• 2007/10 - 2008/03 Professor, Faculty of Science and Engineering, Saga University
• 2008/04 -  *  Professor, Synchrotron Light Application Center, Saga University
• 2008/04 - 2012/03 Synchrotron Light Application Center, Saga University
• 2009/10 - 2013/09 Part-time Lecturer
• 2010/06 - 2017/03 Shanghai Jiaotong University
• 2011/04 - 2013/03 Fukuoka University
• 2012/04 - 2022/03 Director, Synchrotron Light Application Center, Saga University
• 2015/04 - 2015/09 Part-time Lecturer
• 2015/05 - 2019/03
• 2015/10 - 2019/03
• 2015/10 - 2017/09 Saga University
• 2016/08 - 2019/08
• 2018/10 - 2022/03

Field of Specialization

• Electronic materials/Electric materials, Crystal engineering, Quantum beam science, Applied materials, Thin film/Surface and interfacial physical properties

Awards

• Functional Materials Scientist Award （2009/06）

Research Topics and Results

• Photoluminescence Characteristics of Rare Earth Doped Ultrawide Bandgap Semiconductors by Synchrotron Radiation Excitation (Keynote Speech) 2024/11
• Growth and Characteristics of Rare Earth-Doped Oxide Films for Full-Color LED Applications (Invited Talk) 2024/10
• Development of UV-VIS luminescence measurement system for ultrawide bandgap semiconductors 2024/08
• Characteristics of MgGa2O4 films grown by oxygen radicals assisted pulsed laser deposition 2024/08
• Low Temperature Growth and Characteristics of GaInN Films by Reactive Sputtering 2024/07
• Synchrotron radiation excited luminescence of Eu, Er, and Tm codoped β-Ga2O3 thin film 2024/06
• Temperature dependence of crystalline quality in MgGa2O4 films by oxygen radicals-assisted pulsed laser deposition 2024/05
• Application of synchrotron light for wide bandgap optoelectronic materials 2024/03
• Low-temperature photoluminescence properties of Tm-doped Ga2O3 films 2024/03
• Characteristics of Light-Emitting Diodes Based on Terbium-Doped Ga2O3 Films 2024/02
• Temperature-dependent photoluminescence of r-GeO2 film deposited on r-plane sapphire by synchrotron radiation excitation 2024/01
• Full Color Light Emitting Diodes Based on Rare Earth Doped Oxide Films (Keynote Speech) 2023/10
• Low temperature growth of MgGa2O4 films for deep ultraviolet photodetectors 2023/09
• Low temperature growth of magnesium gallate crystalline films 2023/08
• Growth and characteristics of terbium doped Ga2O3 luminescent films 2023/08
• Color-Tunable Light Emitting Diodes Based on Rare Earth Doped Gallium Oxide Films (Review Paper) 2023/08
• Enhancement of photoluminescence from Tm-doped (AlxGa1−x)2O3 thin films by pulsed laser deposition 2023/07
• Temperature dependence of luminescence characteristics from Eu doped Ga2O3 thin films excited by synchrotron radiation source 2023/06
• Optoelectronic properties and ultrafast carrier dynamics of copper iodide thin films 2022/12
• Heteroepitaxy of (100)-oriented rutile GeO2 film on c-plane sapphire by pulsed laser deposition 2022/11
• Near infrared-II light-emitting devices based on Er-doped Ga2O3 films 2022/10
• Color-Tunable Light Emitting Diodes Based on Rare Earth Doped Gallium Oxide Films (Keynote Speech) 2022/09
• RFスパッタリング法によるInGaN の薄膜成長と評価 2022/09
• Growth and Characterization of GaInN Films by Reactive Sputtering 2022/09
• Growth of Magnesium Gallate Films by Pulsed Laser Deposition 2022/09
• Low-temperature growth of In2O3 films on a-plane sapphire substrates by pulsed laser deposition 2022/08
• Current-controlled electroluminescence from light-emitting diodes based on Tm, Er, and Eu codoped Ga2O3 thin films 2022/08
• Strong enhancement of red photoluminescence from Eu doped Ga2O3 films by thermal annealing 2022/06
• Heteroepitaxial Growth of (AlGa)2 O3 Thin Films on Sapphire Substrates by Plasma-Assisted Pulsed Laser Deposition 2022/05
• Near-infrared light-emitting diodes based on Tm-doped Ga2O3 2022/05
• Pulsed laser deposition growth of ultra-wide bandgap GeO2 film and its optical properties 2021/11
• Efficient Color-tunable Emission from Rare Earth Doped Gallium Oxide Films (Keynote Speech) 2021/08
• Strategy toward white LEDs based on vertically integrated rare earth doped Ga2O3 films 2021/08
• Low threshold voltage blue light emitting diodes based on thulium doped gallium oxides 2021/07
• Low temperature growth of In2O3 films via pulsed laser deposition with oxygen plasma 2021/05
• Low driven voltage green electroluminescent device based on Er:Ga2O3/GaAs heterojunction 2021/05
• Yellow emission from vertically integrated Ga2O3 doped with Er and Eu electroluminescent film 2021/04
• Epitaxial growth of (AlxGa1-x)2O3 thin films on sapphire substrates by plasma assisted pulsed laser deposition 2021/03
• Realization of red electroluminescence from Ga2O3:Eu/Si based light-emitting diodes 2021/01
• Improvement of sensing sensitivity based on green emissions from Er-doped (AlGa)2O3 films 2021/01
• Low Temperature Growth and Characterization of Ultrawide Bandgap Gallium Oxide Based Semiconductors (Invited talk) 2020/11
• Low Temperature Growth of Gallium Oxide Based Ultrawide Bandgap Semiconductors (Keynote Speech) 2020/11
• Epitaxial Growth and Characteristics of Gallium Oxide Based Ultrawide Bandgap Semiconductors (Keynote Speech) 2020/10
• シンクロトロン光を用いたワイドギャップ化合物半導体の評価 2020/10
• Efficient temperature sensor based on green emissions from Er-doped β-Ga2O3 thin film 2020/10
• Epitaxial growth of gallium oxide based ultrawide bandgap semiconductors (Invited talk) 2020/09
• Characteristics of gallium oxide based wide bandgap semiconductors (Invited talk) 2020/07
• Impacts of oxygen radical ambient on structural and optical properties of (AlGa)2O3 films deposited by pulsed laser deposition 2020/06
• Enhanced green emission from Er-doped (AlGa)2O3 films grown by pulsed laser deposition 2020/05
• Realization of rocksalt Zn1-: XCdxO thin films with an optical band gap above 3.0 eV by molecular beam epitaxy 2020/04
• Conductive transparent (InGa)2O3 film as host for rare earth Eu 2020/04
• An unexpected surfactant role of immiscible nitrogen in the structural development of silver nanoparticles: An experimental and numerical investigation 2020/04
• Growth and Characterization of Tm Doped Gallium Oxide Films 2019/12
• Review of Ga2O3 based optoelectronic devices (Review Article) 2019/12
• Low temperature growth of (AlGa)2O3 films by oxygen radical assisted pulsed laser deposition 2019/12
• Growth and Characterization of Ultra-Wide Bandgap Oxide Semiconductors (Invited talk) 2019/11
• High pressure influences on properties of Ga2O3 based films (Invited talk) 2019/10
• Characteristics of gallium oxide based wide bandgap semiconductors (Invited talk) 2019/10
• Composition and Properties Control Growth of High-Quality GaOx Ny Film by One-Step Plasma-Enhanced Atomic Layer Deposition 2019/09
• Low-temperature epitaxial growth of high-quality GaON films on ZnO nanowires for superior photoelectrochemical water splitting 2019/09
• Low temperature growth of Tm doped gallium oxide films by plasma-assisted pulsed laser deposition 2019/09
• Low temperature growth of Ga2O3 films on sapphire substrates by plasma assisted pulsed laser deposition 2019/08
• Low driven voltage red LEDs using Eu-doped Ga2O3 films on GaAs 2019/06
• Growth properties of gallium oxide on sapphire substrate by plasma-assisted pulsed laser deposition 2019/03
• 酸素ラジカル源を用いたPLD 法によるα-Al2O3 基板上へのTm ドープGa2O3 薄膜の成長と評 価 2018/12
• 酸素ラジカル源を用いたPLD 法によるサファイア基板上へのSi ドープGa2O3 薄膜の作製と評価 2018/12
• RF スパッタリング法によるGaN を用いたInGaN 薄膜成長に関する研究 2018/12
• Recent progress on growth of gallium oxide based wide bandgap semiconductors 2018/11
• Characteristics of gallium oxide based semiconductors (Invited talk) 2018/11
• Characteristics of gallium oxide based wide bandgap semiconductors (Invited) 2018/10
• Structural and Electrical Properties of Ga2O3 Films Deposited under Different Atmospheres by Pulsed Laser Deposition 2018/09
• Epitaxial Growth of Gallium Oxide Based Wide Bandgap (Keynote) 2018/08
• Growth of InGaN Films by Reactive Sputtering 2018/08
• Pure green emission from Er doped gallium oxide (Invited talk) 2018/06
• Growth and characterization of gallium oxide based wide bandgap semiconductors (Invited talk) 2018/05
• Ultraviolet emission from MgZnO films and ZnO/MgZnO single quantum wells grown by pulsed laser deposition 2018/05
• Synchrotron Light Applications for Characterizing Functional Materials (Invited) 2018/04
• Evolution of optical properties and band structure from amorphous to crystalline Ga2O3 films 2018/04
• The impact of dopant contents on structures, morphologies and optical properties of Eu doped Ga2O3 films on GaAs substrate 2018/04
• Photoluminescence of ZnTe/ZnMgTe multiple quantum well structures grown on ZnTe substrates by molecular beam epitaxy 2018/01
• Investigation on structural properties of rare earth doped gallium oxide films 2017/11
• Characteristics of gallium oxide films grown by oxygen plasma assisted pulsed laser deposition 2017/11
• Characteristics of gallium oxide based wide bandgap semiconductors 2017/11
• Ultraviolet detectors based on (GaIn)2O3 films 2017/11
• Characteristics of thulium doped gallium oxide films grown by pulsed laser deposition 2017/11
• Characteristics of gallium oxide based wide bandgap semiconductors (Invited Talk) 2017/10
• Efficient pure green emission from Er doped β-Ga2O3 films (Invited Review Article) 2017/08
• Structural properties of Eu doped gallium oxide films 2017/07
• Epitaxial growth of gallium oxide based wide bandgap semiconductors (Invited) 2017/06
• Temperature-dependent raman scattering in cubic (InGa)2O3 thin films 2017/01
• Growth and characterization of gallium oxide based wide bandgap semiconductors (Invited) 2016/11
• Optical and electrical properties of Si-doped Ga2O3 films 2016/10
• Crystal growth of gallium oxide based wide bandgap semiconductors 2016/10
• Epitaxial growth and characterization of gallium oxide based wide bandgap semiconductors (Invited Talk) 2016/10
• Band alignment of Ga2O3/Si heterojunction interface measured by X-ray photoelectron spectroscopy 2016/09
• Toward controlling the carrier density of Si doped Ga2O3 films by pulsed laser deposition 2016/09
• 直接接合技術を用いたp-ZnTe/n-ZnOヘテロ接合界面の作製と電気特性評価 2016/09
• Epitaxial growth of ZnTe films y MOCVD (Invited talk) 2016/08
• Low temperature growth of ZnO/MgZnO single quantum well 2016/08
• Epitaxial growth of Ga2O3:Er films on silicon substrate 2016/08
• Observation of low voltage driven green emission from erbium doped Ga2O3 light-emitting devices 2016/08
• Thickness influence on properties of Ga2O3 films grown by pulsed laser deposition 2016/07
• Growth and characterization of (AlGa)2O3 films (Invited Talk) 2016/07
• Highly transparent conductive Ga doped ZnO films in the near-infrared wavelength range 2016/07
• Green Electroluminescence from Er Doped Gallium Oxide/Silicon Heterostructured Light Emitting Device 2016/06
• Influence of substrate temperature on the properties of (AlGa)2O3 thin films prepared by pulsed laser deposition 2016/06
• Large-scale ordering of nanoparticles using scoelastic shear processing 2016/05
• Temperature dependence of luminescence spectra in europium doped Ga2O3 film 2016/04
• 光电材料的应用和研究动态 2016/03
• Low pressure MOVPE growth and characterization of ZnTe homoepitaxial layers 2016/03
• The impact of growth temperature on structural and optical properties of catalyst-free β-Ga2O3 nanostructures 2016/03
• Temperature dependence of Raman scattering in β-(AlGa)2O3 thin films 2016/02
• Characterization of compound semiconductors by using synchrotron light (Invited Talk) 2016/01
• Characteristics of synchrotron light (Invited Talk) 2016/01
• Introduction to Synchrotron Light (Invited talk) 2016/01
• Compositional dependence of optical transition energies in highly mismatched Zn1-xCdxTe1-yOy alloys 2016/01
• Effects of dopant contents on structural, morphological and optical properties of Er doped Ga2O3 films 2016/01
• Epitaxial Growth and Characterization of Nitride Semiconductors for Multi-Junction Tandem Solar Cells (Invited Talk) 2015/12
• Low temperature growth of europium doped Ga2O3 luminescent films 2015/12
• Effect of Substrate Temperature on Structures and Optical Properties of (AlGa)2O3 Films 2015/11
• The Effect of Growth Temperature on Structural and Optical Properties of Europium Doped Ga2O3 Films 2015/11
• Si-Doped Ga2O3 Films Grown by Pulsed Laser Deposition 2015/11
• Photoluminescence characteristics of ZnTe bulk crystal and ZnTe epilayer grown on GaAs substrate by MOVPE 2015/11
• Electrical properties of Si doped Ga2O3 films grown by pulsed laser deposition 2015/11
• Synchrotron Light Applications for Characterizing Semiconductor Materials (Invited Talk) 2015/10
• Epitaxial growth and characterization of (GaIn)2O3 and (AlGa)2O3 films (Invited Talk) 2015/10
• Epitaxial Growth and Characterization of (GaIn)2O3 and (AlGa)2O3 Films (Invited Talk) 2015/10
• Synchrotron Light Applications for Characterizing Semiconductor Materials (Invited Talk) 2015/10
• Epitaxial growth and characterization of compound semiconductors (Invited Talk) 2015/08
• Tunable bandgap of Ga2O3 based semiconductors (Invited Talk) 2015/08
• Energy band bowing parameter in MgZnO alloys 2015/07
• Electronic structure of β-Ga2O3 single crystals investigated by hard X-ray photoelectron spectroscopy 2015/07
• Growth of (GaIn)2O3 Films and Nanostructures (Invited Talk) 2015/06
• MBEによる高不整合材料ZnCdTeO薄膜の成長 2015/03
• ZnTe基板上へのClドープCdTe薄膜のMBE成長 2015/03
• Compositions of Mg and Se, surface morphology, roughness and Raman property of Zn1−xMgxSeyTe1−y layers grown at various substrate temperatures or dopant transport rates by MOVPE 2015/02
• Toward the understanding of annealing effects on (GaIn)2O3 films 2015/02
• Lower temperature growth of single phase MgZnO films in all Mg content range 2015/01
• Epitaxial growth and characterization of nitride semiconductors (Invited talk) 2015/01
• スパッタリング法によるMgO(100)基板上へのInN薄膜成長 2014/12
• 多源蒸着法によるCu2SnSe3の作製と評価 2014/12
• PLD法によるSnドープGa2O3薄膜の成長と評価 2014/12
• Terahertz surface emission from Cu2ZnSnSe4 thin film photovoltaic material excited by femtosecond laser pulses 2014/12
• ZnTeO-based intermediate band solar cells using MBE-grown n-type ZnS layers 2014/11
• Wide bandgap engineering of (AlGa)2O3 films 2014/11
• Epitaxial Growth and Characterization of InGaN for Multi Junction Tandem Solar Cells (Invited Talk) 2014/11
• Heteroepitaxy growth and chatacterization of compound semiconductors (Invited Talk) 2014/11
• Biomass-derived hierarchical porous CdS/M/TiO2 (M = Au, Ag, pt, pd) ternary heterojunctions for photocatalytic hydrogen evolution 2014/10
• Epitaxial Growth and Characterization of ZnTe Films (Invited Talk) 2014/10
• Growth and Characterization of (GaIn)2O3 Films (Invited Talk) 2014/10
• Intermediate band solar cells based on ZnTeO epilayer with n-ZnS blocking layer 2014/09
• Structural and optical properties of (GaIn)2O3 films 2014/08
• Electrical properties and emission mechanisms of Zn-doped β-Ga2O3 films 2014/07
• Thermal annealing impact on crystal quality of (GaIn)2O3 alloys 2014/07
• Heteroepitaxial growth of II-VI compound semiconductors (Invited Talk) 2014/07
• Leaf-inspired hierarchical porous CdS/Au/N-TiO2 heterostructures for visible light photocatalytic hydrogen evolution 2014/04
• The effects of substrate temperature upon the compositions of Mg and Se in Zn1-xMgxSeyTe1-y layer grown by MOVPE 2014/03
• Wide bandgap engineering of (GaIn)2O3 films 2014/03
• Fabrication of ZnO/ZnTe heterojunction by using a Room Temperature Direct Bonding technology 2014/02
• Growth of InGaN layers on (111) silicon substrates by reactive sputtering 2014/01
• Photogenerated Current By Two-Step Photon Excitation in ZnTeO Intermediate Band Solar Cells with n-ZnO Window Layer 2014/01
• Structural and optical properties of Ga2O3 films on sapphire substrates by pulsed laser deposition 2014/01
• 第2編 第7章 第6節 ZnTe基板とLEDへの応用 2013/12
• Recombination dynamics and carrier lifetimes in highly mismatched ZnTeO alloys 2013/12
• Epitaxial growth of compound semiconductors for high efficiency solar cells 2013/10
• Growth and characterization of ZnTe thin films (Invited Talk) 2013/09
• Growth and Characterization of Zn-MgSeTe Epilayers on ZnTe Substrates by Molecular Beam Epitaxy 2013/09
• Fabrication of ZnO/ZnTe Heterojunction by Using a Room Temperature Direct Bonding Technology 2013/09
• Growth and Characterization of Zn1-xMgxSeyTe1-y on ZnTe Substrate by Metalorganic Vapor Phase Epitaxy 2013/09
• Molecular Beam Epitaxy of n-ZnS Epilayers for ZnTe Solar Cell Application 2013/09
• Correlation Between Photoluminescence and Carrier Concentration in Phosphorus- doped ZnTe 2013/09
• Effect of reactor pressure upon photoluminescence properties of ZnTe homoepitaxial layer 2013/09
• Research activity on optoelectronic materials and devices at Saga University 2013/09
• Growth of GaInN films on silicon substrates by reactive sputtering 2013/07
• Surface morphologies and photoluminescence properties of undoped and P-doped ZnTe layers grown by metalorganic vapor phase epitaxy 2013/05
• Effects of annealing treatment upon electrical and photoluminescence properties of phosphorus-doped ZnMgTe epilayers grown by metalorganic vapor phase epitaxy 2013/05
• Effect of substrate temperature on optical properties and strain distribution of ZnTe epilayer on (100) GaAs substrates 2013/05
• Characterization of ZnTe layers on (0001) ZnO substrates by metalorganic vapor phase epitaxy 2013/05
• Growth of Gallium Oxide Films by Pulsed Laser Deposition 2013/05
• Epitaxial Growth of ZnTe Layers on ZnO Bulk Substrates by Metalorganic Vapor Phase Epitaxy 2013/04
• Effects of oxygen gas pressure on properties of iron oxide films grown by pulsed laser deposition 2013/03
• Structural integration design for enhanced photoluminescence in butterfly scales 2013/03
• Molecular beam epitaxial growth of ZnCdTeO epilayers for intermediate band solar cells 2013/03
• Development of ZnTe-based solar cells 2013/03
• Photocurrent induced by two-photon excitation in ZnTeO intermediate band solar cells 2013/03
• Band alignment of ZnTe/GaAs heterointerface investigated by synchrotron radiation photoemission spectroscopy 2013/03
• Current Status of Researches on THz Applications 2013/03
• Raman-scattering probe of anharmonic effects due to temperature and composition in InGaN 2013/02
• Heteroepitaxial growth of ZnTe layers by MOVPE (Invited Talk) 2012/12
• Impact of Radio Frequency Powers on GaInN Film Growth by Magnetron Reactive Sputtering 2012/11
• シンクロトロン光による化合物半導体の評価 2012/11
• Phase transformation and nanograin refinement of silicon by processing through high-pressure torsion 2012/10
• Effects of substrate temperature upon optical properties of ZnTe epilayers grown on (100) GaAs substrates by MOVPE 2012/08
• Low-temperature Epitaxial Growth of GaInN Films (Invited Talk) 2012/08
• Photo-electrochemical properties of titanium dioxide thin films prepared by reactive RF sputtering method 2012/08
• Growth of ZnTe layers on (0001) ZnO substrates by metalorganic vapor phase epitaxy 2012/08
• Nanocrystallization of Si by High-pressure Torsion 2012/08
• Synchrotron-Radiation-Excited UV-VIS Luminescence Experimental Station at Saga University beamline BL13: Design and Installation Progress 2012/08
• Development of ZnTe-based Solar Cells 2012/08
• Growth of advanced materials for THz device applications (Invited Talk) 2012/08
• Synchrotron Light Applications for Characterizing Advanced Thin Films (Invited Talk) 2012/07
• Characterization of epitaxial ZnTe layers grown on GaAs substrates by transmission electron microscopy and photoluminescence 2012/05
• Effects of Annealing Treatment upon Electrical and Photoluminescence Properties of Phosphorus-Doped ZnMgTe Epilayers Grown by Metaloroganic Vapor Phase Epitaxy 2012/05
• Characterization of ZnTe Epilayers on GaAs (111) Substrates by Metalorganic Vapor Phase Epitaxy 2012/05
• Influence of (MeCp)2Mg Transport Rate upon Growth of Phosphorus-Doped ZnMgTe Layers by MOVPE. 2012/05
• Surface Morphologies and Photoluminescence Properties of Undoped and P-doped ZnTe Layers Grown by Metaloroganic Vapor Phase Epitaxy. 2012/05
• Existence and removal of Cu2Se second phase in coevaporated Cu2ZnSnSe4 thin films 2012/04
• Epitaxial growth of ZnTe layers on (111) GaAs substrates 2012/04
• Epitaxial growth of ZnTe layers on (111) GaAs substrates 2012/04
• 光電材料的応用与発展 2012/03
• Synchrotron Light Application in Optoelectronics 2012/03
• Bacteria-directed construction of hollow TiO2 micro/nanostructures with enhanced photocatalytic hydrogen evolution activity 2012/03
• Growth of ZnTe layers on (111) GaAs substrates by metalorganic vapor phase epitaxy 2012/02
• Epitaxial growth of ZnO layers on (111) GaAs substrates by laser molecular beam epitaxy 2012/01
• Molecular beam epitaxial growth and optical properties of highly mismatched ZnTe1-xOx alloys 2012/01
• Art of blackness in butterfly wings as natural solar collector 2011/12
• Growth and characterization of Fe3O4 films 2011/12
• Synchrotron light applications for characterizing novel photonic materials (Invited Talk) 2011/12
• Synchrotron light application for characterizing novel energy materials (Invited talk) 2011/11
• A new method to prepare high-surface-area N–TiO2/activated carbon 2011/11
• Preparation and characterization of high-surface-area TiO2/activated carbon by low-temperature impregnation 2011/11
• Synchrotron Light Applications for Characterizing Novel Functional Materials (Invited Talk) 2011/10
• Synchrotron Light Applications for Characterizing Novel Functional Materials (Invited Talk) 2011/10
• 仮想化技術を用いたＩＴ技術者育成のためのサーバ実習環境の評価と教育実践 2011/09
• Temperature Dependence of Raman Scattering in AlInN 2011/07
• Fundamental properties of sputtered InGaN films 2011/07
• STRUCTURAL PROPERTIES OF MAGNETITE FILMS GROWN BY PULSED LASER DEPOSITION (Invited Talk) 2011/07
• Electronic Structure of II (Zn, Mg, Be)-VI (O, S) Wide-Gap Compound Semiconductor Alloys 2011/07
• Optical properties of AlInN thin films (in Chinese) 2011/06
• Electronic structure of GaInN semiconductors investigated by x-ray absorption spectroscopy 2011/05
• Effect of gas flow rate on surface morphology and crystal quality of ZnTe epilayers grown on GaAs substrates 2011/03
• Synchrotron Light Applications for Characterizing Semiconductors 2010/12
• Low-temperature epitaxial growth of nitride semiconductor thin films (Invited Talk) 2010/09
• Properties of InGaN Films Grown by Reactive Sputtering 2010/08
• Effects of Total Flow Rate on ZnTe Growth on GaAs Substrate by Metalorganic Vapor Phase Epitaxy 2010/08
• Low-temperature buffer layer effects on the quality of ZnTe epilayers grown on sapphire substrates 2010/07
• Low-temperature growth of InGaN films by reactive sputtering 2010/06
• Growth of nitride thin films for multi-junction tandem solar cells (Invited Talk) 2010/06
• Improvement of Crystal Quality of ZnTe Epilayers on Sapphire Substrates 2010/04
• Improvement of Crystal Quality of ZnTe Epilayers on Sapphire Substrates 2010/04
• 光源加速器 2010/04
• 放射光照射を用いるプロセスの研究 2010/04
• Artificial inorganic leaf for efficient photochemica hydrogen production inspired by natural photosynthesis 2010/01
• Growth and characterization of nitride compounds for clean energy applications 2010/01
• Low-temperature Growth and Characterization of Thin Films for Clean Energy Applications 2009/12
• Epitaxial Growth and Characterization of ZnTe Thin Films for Terahertz Devices (Invited talk) 2009/09
• Improvement in the Quality of ZnTe Epilayers Grown on GaAs Substrates by Introducing a Low-temperature Buffer Layer 2009/08
• Temperature Dependence of the Optical Properties of AlInN 2009/07
• Growth of InGaN films by reactive sputtering 2009/07
• Effects of growth parameters on surface roughness of RF magnetron sputtered Al films 2009/07
• Growth and characterization of ZnTe for pure-green light emitting diodes and terahertz devices (Invited Lecture) 2009/06
• Heteroepitaxial growth of InN layers on (111) silicon substrates 2009/05
• Giant Seebeck coefficient decrease in polycrystalline materials with highly anisotropic band structures: Implications in seeking high-quality thermoelectric materials 2008/09
• Growth Properties of Polytetrafluoroethylene Films by Synchrotron Radiation Ablation 2007/10
• Reactive sputter deposition of AlInN thin films 2007/03
• Structural and optical properties of ZnMgO films grown by metal organic decomposition 2007/02
• Fabrication and Characteristics of Nanostructured Materials Using Anodic Porous Alumina 2006
• Fabrication of ZnO microtubes with adjustable nanopores on the walls by the templating of butterfly wing scales 2006
• Cathodoluminescence study of anodic nanochannel alumina 2006
• Growth properties of AlN films on sapphire substrates by reactive sputtering 2006
• Reactive Ion Etching of Zinc Oxide Using Methane and Hydrogen Gases 2006
• Electron Dephasing in Wurtzite Indium Nitride Thin Films 2006
• Microscopic investigations of aluminum nitride thin films grown by low-temperature reactive sputtering 2005
• Fabrication of highly ordered nanocrystalline Si:H nanodots for the application of nanodevice arrays 2005
• Effects of dry etching processes on optical properties of ZnTe surface layers in ultraviolet region 2005
• Strong Room-Temperature UV Luminescence from ZnO Grown by Metal Organic Decomposition (Brief Communication) 2005
• Optical properties of InN with stoichoimetry violation and indium clustering 2005
• Generation and Detection of Terahertz Radiation on Reactive Ion Etched ZnTe Surfaces 2005
• X-ray absorption near-edge fine structure study of AlInN semiconductors. 2005
• Temperature Dependence of Raman Scattering in Hexagonal Indium Nitride Films 2005
• Observation of visible luminescence from indium nitride at room temperature 2005
• Recovery from Dry Etching Damage in ZnTe by Thermal Annealing 2005
• Generation of Terahertz Radiation via Optical Rectification and Electro-optic Detection in ZnTe Crystal 2004
• Micro-Raman study of hexagonal InN thin films grown by reactive sputtering on GaAs 2004
• Advanced Materials in Electronics, Preface 2004
• Growth and Structural Properties of InN and AlInN 2004
• Some Properties of Indium Nitride 2004
• Lattice vibrational properties of InN thin films 2004
• Growth condition dependence of structure and surface morphology of GaN films on (111) GaAs substrates prepared by reactive sputtering 2004
• Effects of structure and processing technique on the properties of thermal spray WC-Co and NiCrAl/WC-Co coatings 2004
• Generation of Terahertz Radiation via Optical Rectification and Electro-optic Detection in ZnTe Crystal 2004
• Micro-Raman study of hexagonal InN thin films grown by reactive sputtering on GaAs 2004
• Temperature Dependence of Refractive Index in InN Thin Films Grown by Magnetron Sputtering 2004
• Critical point transitions of wurtzite AIN in the vacuum-ultraviolet spectral range 2004
• Electrical properties of semiconductor InN (Review paper) 2004
• Temperature effects on optical properties of InN thin films 2004
• Selective Dry Etching of Zinc Telluride Using Aluminum Mask 2004
• Synchrotron Radiation - Excited Etching of ZnTe 2004
• Electroluminescence and photoluminescence characteristics in ZnTe LED fabricated by Al thermal diffusion 2004
• Growth of phosphorus-doped ZnTe layers by metalorganic vapour phase epitaxy using tris-dimethylaminophosphorus 2004
• 佐賀県立九州シンクロトロン光研究センター事業の現状と利用計画 2004
• Specific Contact Resistance of Pd Electroless to p-type ZnTe 2004
• Experimental studies of lattice dynamical properties in indium nitride (Review paper) 2004
• Optical and electrical properties of InN thin films grown by reactive magnetron sputtering 2004
• The apparent viscosity of fine particle reinforced composite melt 2003
• Characteristics of reactive ion etching fo zinc telluride 2003
• Lattice Vibrational Properties of Semiconductor InN (Review paper) 2003
• Keys to success of engineering education in global society, 2003
• Characterization of damage in reactive ion etched ZnTe 2003
• Low-temperature growth of aluminum nitride on sapphire substrates 2003
• Optical Bandgap Energy of Wurtzite In-Rich AlInN Alloys 2003
• Fabrication of Indium Nitride Nanodots Using Anodic Alumina Templates 2003
• Temperature dependence of aluminum nitride reflectance spectra in vacuum ultraviolet region 2003
• Growth and characterization of reactive sputtered AlInN films 2003
• Grain refinement of Al-Si alloy (A356) by melt thermal treatment 2003
• The apparent viscosity of fine particle reinforced composite melt 2003
• Highly-ordered GaAs/AlGaAs quantum-dot arrays on GaAs (001) substrates grown by molecular-beam epitaxy using nanochannel alumina masks 2003
• Raman investigation of disorder in InN thin films grown by reactive sputtering on GaAs 2003
• Temperature dependence of the optical properties in hexagonal AlN 2003
• Capacitance characteristics in InN thin films grown by reactive sputtering on GaAs 2003
• Study of far-infrared reflection and Raman scattering spectra of reactive ion etched ZnTe 2003
• Effects of dry etching processes on effective refractive index of ZnTe surface layers in terahertz region 2003
• Effects of Dry Etching Processes on Exciton and Polariton Characteristics in ZnTe 2003
• Growth and optical properties of high-quality ZnTe homoepitaxial layers by metalorganic vapor phase epitaxy 2003
• Photoluminescence properties of ZnTe homoepitaxial layers grown by synchrotron -radiation-excited growth using nitrogen carrier gas, 2003
• Fabrication of ZnTe Light-Emitting Diodes Using Bridgman-Grown Substrates 2003
• Photoluminescence of iodine-doped ZnTe homoepitaxial layer grown by metalorganic vapor phase epitaxy 2003
• Photoluminescence of Cl-doped ZnTe epitaxial layer grown by atmospheric pressure metalorganic vapor phase epitaxy 2003
• Low temperature epitaxia lgrowth of nitride senliconductors on GaAs substrates 2002
• Bandtail characteristics in InN thin films 2002
• Fabrication of ZnTe Nanohole Arrays by Reactive Ion Etching Using Anodic Alumina Templates 2002
• Heteroepitaxial growth of gallium nitride on (111)GaAs substrates by radio frequency magnetron sputtering 2002
• Effect of GaN buffer layer on crystallinity of InN grown on (111)GaAs 2002
• Growth-dependent phonon characteristics in InN thin films 2002
• Effects of Dry Processing on Optical Properties of Zinc Telluride 2002
• Cathodoluminescence Study of Highly Ordered Arrays of InGaAs Quantum Dots 2002
• Optical constants of InN thin films on (111)GaAs grown by reactive magnetron sputtering 2002
• Molecular-beam Epitaxy growth of GaAs and InGaAs/GaAs nanodot arrays using anodic Al2O3 nanohole array template masks 2002
• Infrared reflection characteristics in InN thin films for the application of plasma filters 2002
• II-VI族化合物半導体のドライエッチング方法 2002
• II-VI族化合物半導体結晶を基板とする光電変換機能素子の製造方法 2002
• Growth of InN films on (1 1 1)GaAs substrates by reactive magnetron sputtering 2001
• Effect of the substrate pretreatment on the epitaxial growth of indium nitride 2001
• Characteristics of Reactive Ion Etching for Zinc Telluride Using CH4 and H2 Gases 2001
• Temperature effect on electronic structure of AlN 2001
• Optical properties of indium nitride and aluminum nitride 2001
• Growth of AlInN on (111)GaAs Substrates 2000
• Reactive ion etching of indium nitride using CH4 and H2 gases 2000
• Effects of nitrogen/argon ratio on composition and structure of InN films prepared by r.f. magnetron sputtering 1999
• Growth characteristics of homoepitaxial ZnTe films deposited by synchrotron radiation using metalorganic sources 1999
• Low-Temperature Growth of InN Films on (111)GaAs Substrates 1999
• Energy loss spectrum of AlN in the 6-120 eV region 1998
• Deposition of InN thin films by radio frequency magnetron sputtering 1998
• Electronic structure of indium nitride studied by photoelectron spectroscopy 1998
• Optical properties of aluminum nitride 1997
• Epitaxial growth and characterization of InN and AlInN 1997
• Optical spectra of InN single crystal in VUV region 1996
• Optical properties of zinc telluride in vacuum ultraviolet region 1996
• Growth of AlInN single crystal films by microwave excited metalorganic vapor phase epitaxy 1995
• Growth of InN films on GaAs(111) and GaP(111) substrates by microwave excited metalorganic vapor phase epitaxy 1995
• Crystal structure and orientation of AlInN epitaxial layers grown on (0001) α-Al2O3 substrates 1995
• Microhardness of indium nitride single crystal films 1994
• Structural properties of InN film grown on sapphire substrate by microwave excited metalorganic vapor phase epitaxy 1994
• Temperature dependence of bandgap change in InN and AlN 1994
• Growth and some properties of AlxIn1-xN crystalline thin films 1994
• Thermal stability of indium nitride single crystalline films 1993
• Degragation mechanism of Au/AOx/Al tunnel junction 1993
• Chemical etching of indium nitride 1992
• Optical constants of indium nitride 1992

Books

• 第2編 第7章 第6節 ZnTe基板とLEDへの応用;　2013/12
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• Light-Emitting Diodes and Optoelectronics: New Research, Chapter : Enhanced Efficiency of ZnTe-Based Green Light-Emitting Diodes;　2012/01
  ANNOUNCEMENT INFO.;　Nova Science Publishers, Inc. New York (2012, in press). ISBN: 978-1-62100-448-6. Nova Science Publishers, Inc. New York (2012, in press). ISBN: 978-1-62100-448-6.
  AUTHOR;　Tooru Tanaka, Katsuhiko Saito, Qixin Guo, Mitsuhiro Nishio
  
• ZnTe基板・応用デバイス;　2009/12
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• Fabrication and Characteristics of Nanostructured Materials Using Anodic Porous Alumina;　2006
  ANNOUNCEMENT INFO.;　Handbook of Semiconductor Nanostructures and Nanodevices, Vol. 2, Chapter 13, pp.407-435, American Scientific Publishers ISBN: 1-58883-075-6 (2006)., 2, 407-435
  AUTHOR;　Qixin Guo, Hiroshi Ogawa, and Harry Ruda
  
• Advanced Materials in Electronics, Preface;　2004
  ANNOUNCEMENT INFO.;　 Research Signpost Advanced Materials in Electronics, Research Signpost , 1-304
  AUTHOR;　Qixin Guo (Editor) Qixin Guo
  
• Growth and Structural Properties of InN and AlInN;　2004
  ANNOUNCEMENT INFO.;　Advanced Materials in Electronics, Chapter 2, Research Signpost , 25-44
  AUTHOR;　Qixin Guo, Mitsuhiro Nishio, and Hiroshi Ogawa
  
• Some Properties of Indium Nitride;　2004
  ANNOUNCEMENT INFO.;　Advanced Materials in Electronics, Chapter 4, Research Signpost ISBN 81-7736-223-2, 141-160
  AUTHOR;　Qixin Guo, Mitsuhiro Nishio, and Hiroshi Ogawa
  
• Lattice vibrational properties of InN thin films;　2004
  ANNOUNCEMENT INFO.;　Advanced Materials in Electronics, Chapter 8, 191-214
  AUTHOR;　Z.G. Qian, W.Z. Shen, H. Ogawa and Q.X. Guo
  
• Optical and electrical properties of InN thin films grown by reactive magnetron sputtering;　2004
  ANNOUNCEMENT INFO.;　Advanced Materials in Electronics, Chapter 7, pp.161-190, Research Signpost ISBN 81-7736-223-2 (2004).
  AUTHOR;　 W.Z. Shen, H. Ogawa, and Q.X. Guo
  
• Characteristics of reactive ion etching fo zinc telluride;　2003
  ANNOUNCEMENT INFO.;　Recent Research Developments in Physics.4, Transworld Research Net-work, Chapter7, 123-132
  AUTHOR;　Q.x.Guo, T.Tanaka, M.Nishio, and H.Ogawa
  
• Low temperature epitaxia lgrowth of nitride senliconductors on GaAs substrates;　2002
  ANNOUNCEMENT INFO.;　Vacuum Science and Technology:Nitrides as seen b y the technology; Research Signpost Chapter19, 457-468
  AUTHOR;　Q. x. Guo, M. Nishio, and　H.Ogawa
  
• Optical properties of indium nitride and aluminum nitride;　2001
  ANNOUNCEMENT INFO.;　Recent Advances in Applied Physics (Global Research Network) Vol. 2 pp.1-13 (2001). ISBN 81-87736-28-3
  AUTHOR;　Q.X.Guo, M. Nishio, and H.Ogawa
  
• Growth rate characteristics and photoluminescence properties of ZnTe grown by MOVPE and photo-assisted MOVPE;　2001
  ANNOUNCEMENT INFO.;　Recent Advances in Applied Physics (Global Research Network) Vol. 2 pp. 69-91 (2001). ISBN 81-87736-28-3
  AUTHOR;　M. Nishio, T. Tanaka, Q.X. Guo, and H. Ogawa
  
• Low temperature epitaxial growth of II-VI compound semiconductors using synchrotron radiation as a light source;　1999
  ANNOUNCEMENT INFO.;　Current topics in crystal growth research, (Research Trends) Vol. 5 pp.1-26 (1999). ISBN 81-258-0044-1
  AUTHOR;　M.Nishio, Q.X.Guo, and H.Ogawa
  
• Epitaxial growth and characterization of InN and AlInN;　1997
  ANNOUNCEMENT INFO.;　Current Topics in Crystal Growth Research, (Research Trends) Vol.3 pp19-32 (1997). ISBN 81-258-0005-0
  AUTHOR;　Q.X.Guo, H.Ogawa, and A.Yoshida
  

Original Articles

• Effect of substrate temperature and position on properties of Cu3N thin films deposited by reactive radio frequency magnetron sputtering;　2024/07
  ANNOUNCEMENT INFO.;　Materials Science in Semiconductor Processing, 182 (2024) 108702.
  AUTHOR;　Shanta Majumder, Miho Ohishi, Katsuhiko Saito, Qixin Guo, Md Abdul Majed Patwary, Tooru Tanaka
  
• Synchrotron radiation excited luminescence of Eu, Er, and Tm codoped β-Ga2O3 thin film;　2024/06
  ANNOUNCEMENT INFO.;　Journal of Luminescence, 274, 120713, 2024.
  AUTHOR;　Yafei Huang, Gaofeng Deng, Zewei Chen, Katsuhiko Saito, Tooru Tanaka, and Qixin Guo*
  
• Temperature dependence of crystalline quality in MgGa2O4 films by oxygen radicals-assisted pulsed laser deposition;　2024/05
  ANNOUNCEMENT INFO.;　Materials Science in Semiconductor Processing,178, 108465 (2024).
  AUTHOR;　Qixin Guo*, Junya Tetsuka, Zewei Chen, Makoto Arita, Katsuhiko Saito, Tooru Tanaka
  
• Oxygen vacancy-rich high-pressure rocksalt phase of zinc oxide for enhanced photocatalytic hydrogen evolution;　2024/04
  ANNOUNCEMENT INFO.;　Journal of Colloid and Interface Science,666, 22-34 (2024).
  AUTHOR;　Yu Shundo; Thanh Tam Nguyen; Saeid Akrami; Parisa Edalati; Yuta Itagoe; Tatsumi Ishihara; Makoto Arita; Qixin Guo; Masayoshi Fuji
  
• Low-temperature photoluminescence properties of Tm-doped Ga2O3 films;　2024/03
  ANNOUNCEMENT INFO.;　Optical Materials,150, 115142 (2024).
  AUTHOR;　Zewei Chen, Gaofeng Deng, Katsuhiko Saito, Tooru Tanaka, and Qixin Guo*
  
• Characteristics of Light-Emitting Diodes Based on Terbium-Doped Ga2O3 Films;　2024/02
  ANNOUNCEMENT INFO.;　Phys. Status Solidi RRL 18, 2300481, 2024.
  AUTHOR;　Qixin Guo*, Yushi Koga, Zewei Chen, Katsuhiko Saito, and Tooru Tanaka
  
• Temperature-dependent photoluminescence of r-GeO2 film deposited on r-plane sapphire by synchrotron radiation excitation;　2024/01
  ANNOUNCEMENT INFO.;　Journal of Luminescence 267 (2024) 120353.
  AUTHOR;　Gaofeng Deng, Yafei Huang, Zewei Chen, Katsuhiko Saito, Tooru Tanaka, Makoto Arita, Qixin Guo*
  
• Improved phosphorus doping in ZnTe by molecular beam epitaxy under alternating source supply;　2023/12
  ANNOUNCEMENT INFO.;　Journal of Applied Physics,134, 193101, 2023.
  AUTHOR;　Muhamad Mustofa, Katsuhiko Saito, Qixin Guo, and Tooru Tanaka
  
• Low temperature growth of MgGa2O4 films for deep ultraviolet photodetectors;　2023/09
  ANNOUNCEMENT INFO.;　Optical Materials, 143, 114267, 2023.
  AUTHOR;　Qixin Guo*, Junya Tetsuka, Zewei Chen, Makoto Arita, Katsuhiko Saito, Tooru Tanaka
  
• Growth and characteristics of terbium doped Ga2O3 luminescent films;　2023/08
  ANNOUNCEMENT INFO.;　Journal of Crystal Growth, 620, 127361, 2023.
  AUTHOR;　Qixin Guo*, Yushi Koga, Zewei Chen, Katsuhiko Saito, Tooru Tanaka
  
• Color-Tunable Light Emitting Diodes Based on Rare Earth Doped Gallium Oxide Films (Review Paper);　2023/08
  ANNOUNCEMENT INFO.;　ACS Applied Electronic Materials, 5, 4002-4013, 2023.
  AUTHOR;　Guo, Qixin*; Saito, Katsuhiko; Tanaka, Tooru
  
• Enhancement of photoluminescence from Tm-doped (AlxGa1−x)2O3 thin films by pulsed laser deposition;　2023/07
  ANNOUNCEMENT INFO.;　Ceramics International, 49, 28702-28710, 2023.
  AUTHOR;　Zewei Chen, Makoto Arita, Gaofeng Deng, Katsuhiko Saito, Tooru Tanaka, Qixin Guo*
  
• Investigation of thermal control in phase-changing ABO3 perovskites via first-principles predictions: General mechanism of solar absorptivity;　2023/06
  ANNOUNCEMENT INFO.;　Physical Chemistry Chemical Physics, 25, 18816-18825, 2023.
  AUTHOR;　Tong, Liping, Li, Hongchao, Gong, Hao, Xu, Nianao, Wang, Zhongyang, Guo, Qixin, Fan, Tongxiang
  
• Temperature dependence of luminescence characteristics from Eu doped Ga2O3 thin films excited by synchrotron radiation source;　2023/06
  ANNOUNCEMENT INFO.;　Japanese Journal of Applied Physics, 62, 061004, 2023.
  AUTHOR;　Huang, Yafei; Deng, Gaofeng; Chen, Zewei; Saito, Katsuhiko; Tanaka, Tooru; Guo, Qixin*
  
• Growth of Phosphorus-doped ZnTe Thin Films by Molecular Beam Epitaxy Using InP as Dopant Source;　2023/04
  ANNOUNCEMENT INFO.;　Japanese Journal of Applied Physics,62, SK1031 (2023).
  AUTHOR;　Mustofa, Muhamad; Mishima, Seiya; Saito, Katsuhiko; Guo, Qixin; Tanaka, Tooru
  
• Investigation of thermal control in phase-changing ABO3 perovskites via first-principles predictions: General mechanism of emittance;　2023/03
  ANNOUNCEMENT INFO.;　Physical Chemistry Chemical Physics, 25, 7302-7311 (2023).
  AUTHOR;　Liping Tong, Nianao Xu, Hongchao Li, Lan Yang, Zhongyang Wang, Qixin Guo and Tongxiang Fan
  
• Spatially resolved Raman piezospectroscopy for nondestructive evaluation of residual stress in β-Ga2O3 films;　2023/03
  ANNOUNCEMENT INFO.;　Journal of Physics D: Applied Physics,56,125102 (2023).
  AUTHOR;　Yasuaki Hara, Wenliang Zhu,* Gaofeng Deng, Elia Marin, Qixin Guo,* and Giuseppe Pezzotti
  
• Room-Temperature Synthesized Amorphous P-Type Transparent Ga2O3-Cu2S Alloy Thin Films with Tunable Optoelectronic Properties;　2023/01
  ANNOUNCEMENT INFO.;　Applied Surface Science, 615, 156341 (2023).
  AUTHOR;　Xiao Hu Lv, Zhan Hua Li, Yuan Shen Qi, Tooru Tanaka, Qi Xin Guo, Kin Man Yu, and Chao Ping Liu
  
• Optoelectronic properties and ultrafast carrier dynamics of copper iodide thin films;　2022/12
  ANNOUNCEMENT INFO.;　Nature Communications,13, 6346, 2022.
  AUTHOR;　Zhan Hua Li, Jia Xing He, Xiao Hu Lv, Ling Fei Chi, Kingsley O. Egbo, Ming-De Li, Tooru Tanaka, Qi Xin Guo, Kin Man Yu, and Chao Ping Liu
  
• Heteroepitaxy of (100)-oriented rutile GeO2 film on c-plane sapphire by pulsed laser deposition;　2022/11
  ANNOUNCEMENT INFO.;　Materials Letters, 326, 132945, (2022).
  AUTHOR;　Gaofeng Deng, Yafei Huang, Zewei Chen, Katsuhiko Saito, Tooru Tanaka, Makoto Arita, and Qixin Guo*
  
• Effect of heterojunction structures on photoelectrochemical properties of ZnTe-based photocathodes for water reduction;　2022/10
  ANNOUNCEMENT INFO.;　RSC Advances, 13, 575-580, 2022
  AUTHOR;　Tooru Tanaka, Ryusuke Tsutsumi, Tomohiro Yoshinaga, Takaki Sonoyama, Katsuhiko Saito, Qixin Guo and Shigeru Ikeda
  
• Near infrared-II light-emitting devices based on Er-doped Ga2O3 films;　2022/10
  ANNOUNCEMENT INFO.;　Optical Materials, 132, 112786, (2022).
  AUTHOR;　Zewei Chen, Gaofeng Deng, Katsuhiko Saito, Tooru Tanaka, Qixin Guo*
  
• Low-temperature growth of In2O3 films on a-plane sapphire substrates by pulsed laser deposition;　2022/08
  ANNOUNCEMENT INFO.;　Thin Solid Films, 756, 139383, 2022.
  AUTHOR;　Zewei Chen, Katsuhiko Saito, Tooru Tanaka, Qixin Guo*
  
• Current-controlled electroluminescence from light-emitting diodes based on Tm, Er, and Eu codoped Ga2O3 thin films;　2022/08
  ANNOUNCEMENT INFO.;　Applied Physics Express,15, 081005, (2022).
  AUTHOR;　Yafei Huang, Gaofeng Deng, Katsuhiko Saito, Tooru Tanaka, and Qixin Guo*
  
• Enhanced CO2 conversion on highly-strained and oxygen-deficient BiVO4 photocatalyst;　2022/06
  ANNOUNCEMENT INFO.;　Chemical Engineering Journal, 442, 136209 (2022).
  AUTHOR;　Saeid Akrami, Yasushi Murakami, Monotori Watanabe, Tatsumi Ishihara, Makoto Arita, Qixin Guo, Masayoshi Fuji, and Kaveh Edalati
  
• Strong enhancement of red photoluminescence from Eu doped Ga2O3 films by thermal annealing;　2022/06
  ANNOUNCEMENT INFO.;　Journal of Luminescence 246, 118858, 2022.
  AUTHOR;　Yafei Huang, Katsuhiko Saito, Tooru Tanaka, Qixin Guo*
  
• Near-infrared light-emitting diodes based on Tm-doped Ga2O3;　2022/05
  ANNOUNCEMENT INFO.;　Journal of Luminescence 245, 118773, 2022.
  AUTHOR;　Zewei Chen, Katsuhiko Saito, Tooru Tanaka, Qixin Guo*
  
• Effects of Al doping on the structural, electrical, and optical properties of rock-salt ZnCdO thin films grown by molecular beam epitaxy;　2022/04
  ANNOUNCEMENT INFO.;　Journal of Physics and Chemistry of Solids, 163, 110571, 2022.
  AUTHOR;　HyoChang Jang, KatsuhikoSaito, QixinGuo, Kin ManYu, TooruTanak
  
• Facile synthesis of Cu2O nanorods in the presence of NaCl by SILAR method and its characterizations;　2022/04
  ANNOUNCEMENT INFO.;　Royal Society Open Science 9, 211899 (2022).
  AUTHOR;　Hossain Md. Alauddin, Farhad Syed Farid Uddin, Tanvir Nazmul , Chang Jang Hyo, Rahman Mohammad Atiqur, Tanaka Tooru, Guo Qixin, Uddin Jamal, Patwary Md Abdul
  
• Improved two-step photon absorption current by Cl-doping in ZnTeO-based intermediate band solar cells with n-ZnS layer;　2022/01
  ANNOUNCEMENT INFO.;　Solar Energy Materials & Solar Cells 235 (2022) 111456.
  AUTHOR;　Tooru Tanaka, Shuji Tsutsumi, Katsuhiko Saito, Qixin Guo, Kin Man Yu
  
• Pulsed laser deposition growth of ultra-wide bandgap GeO2 film and its optical properties;　2021/11
  ANNOUNCEMENT INFO.;　Applied Physics Letters 119, 182101 (2021)
  AUTHOR;　Gaofeng Deng, Katsuhiko Saito, Tooru Tanaka, Makoto Arita, and Qixin Guo*
  
• Creating Terahertz Pulses from Titanium-doped Lithium Niobate-based Strip Waveguides with 1.55 μm Light;　2021/08
  ANNOUNCEMENT INFO.;　Journal of Materials Science: Materials in Electronics, 32, 23164–23173 (2021).
  AUTHOR;　Jessica Pauline Castillo Afalla; Takashi Furuya; Hideaki Kitahara; Elmer Surat Estacio; Katsuhiko Saito; Qixin Guo; Masahiko Tani
  
• Strategy toward white LEDs based on vertically integrated rare earth doped Ga2O3 films;　2021/08
  ANNOUNCEMENT INFO.;　Applied Physics Letters, 119 , 062107, 2021.
  AUTHOR;　Yafei Huang, Katsuhiko Saito, Tooru Tanaka, and Qixin Guo*
  
• Low threshold voltage blue light emitting diodes based on thulium doped gallium oxides;　2021/07
  ANNOUNCEMENT INFO.;　Applied Physics Express,14, 081002, 2021.
  AUTHOR;　Chen, Zewei; Saito, Katsuhiko; Tanaka, Tooru; GUO, Qixin*
  
• Effect of Nitrogen Doping on Structural, Electrical, and Optical properties of CuO Thin Films Synthesized by Radio Frequency Magnetron Sputtering for Photovoltaic Application;　2021/06
  ANNOUNCEMENT INFO.;　ECS Journal of Solid State Science and Technology,10 065019, 2021.
  AUTHOR;　Patwary, Md Abdul; Ohishi, Miho ; Saito, Katsuhiko ; Guo, Qixin ; Yu, Kin Man; Tanaka, Tooru
  
• Raman spectroscopic study of frustrated ferroelectric phase in hydroxyl salts Co2(OH)3Br/Co2(OD)3Br;　2021/05
  ANNOUNCEMENT INFO.;　, Journal of Physics : Condensed Matter, 33, 275401, 2021
  AUTHOR;　XL Xu, DD Meng, XG Zheng, QX Guo
  
• Reduction of MOS interfacial states between β-Ga2O3 and Al2O3 insulator by self-reaction etching with Ga flux;　2021/05
  ANNOUNCEMENT INFO.;　Applied Physics Letters, 118, 181602. 2021.
  AUTHOR;　Boyuan Feng, Tao He, Gaohang He, Xiaodong Zhang, Ying Wu, Xiao Chen, Zhengcheng Li, Xinping Zhang, Zhitai Jia, Gang Niu, Qixin Guo, Zhongming Zeng, Sunan Ding
  
• Low temperature growth of In2O3 films via pulsed laser deposition with oxygen plasma;　2021/05
  ANNOUNCEMENT INFO.;　Japanese Journal of Applied Physics, 60, 055505, 2021.
  AUTHOR;　Pan, Chengyu; Saito, Katsuhiko; Tanaka, Tooru; Guo, Qixin*
  
• Low driven voltage green electroluminescent device based on Er:Ga2O3/GaAs heterojunction;　2021/05
  ANNOUNCEMENT INFO.;　Optical Materials, 116, 111078, 2021.
  AUTHOR;　Gaofeng Deng, Katsuhiko Saito, Tooru Tanaka, and Qixin Guo*
  
• Bandgap Tailoring of Monoclinic Single-Phase β-(AlxGa1−x)2O3 (0 ≤ x ≤ 0.65) Thin Film by Annealing β-Ga2O3/Al2O3 Heterojunction at High Temperatures;　2021/05
  ANNOUNCEMENT INFO.;　Physica Status Solidi (A) Applications and Materials Science, 218, 2000785, 2021.
  AUTHOR;　Li, Z., Wu, Y., Feng, B., Li, Y., Liu, T., Feng, J., Chen, X., Huang, R., Xu, L., Li, Z., Hu, N., Li, F., Jia, Z., Niu, G., Guo, Q., He, G., Ding, S.
  
• Efficient terahertz wave generation of diabolo-shaped Fe/Pt spintronic antennas driven by a 780nm pump beam;　2021/04
  ANNOUNCEMENT INFO.;　Applied Physics Express 14, 042008, 2021.
  AUTHOR;　Miezel Talara, Dmitry S. Bulgarevich, Chiyaka Tachioka, Valynn Katrine Mag-usara, Joselito Muldera, Takashi Furuya, Hideaki Kitahara, Mary Clare Escaño, Qixin Guo, Makoto Nakajima, Garik Torosyan, René Beigang, Makoto Watanabe, and Masahiko Tani
  
• Structural, optical, and electrical properties of WZ-and RS-ZnCdO thin films on MgO (100) substrate by molecular beam epitaxy;　2021/04
  ANNOUNCEMENT INFO.;　Journal of Alloys and Compounds 867, 159033, 2021.
  AUTHOR;　HC Jang, K Saito, Q Guo, KM Yu, W Walukiewicz, T Tanaka
  
• Yellow emission from vertically integrated Ga2O3 doped with Er and Eu electroluminescent film;　2021/04
  ANNOUNCEMENT INFO.;　Journal of Luminescence 235, 118051, 2021.
  AUTHOR;　Gaofeng Deng, Yafei, Huang Zewei Chen, Chengyu Pan, Katsuhiko Saito, Tooru Tanaka, Qixin Guo*
  
• Epitaxial growth of (AlxGa1-x)2O3 thin films on sapphire substrates by plasma assisted pulsed laser deposition;　2021/03
  ANNOUNCEMENT INFO.;　AIP Advances 11, 035319, 2021
  AUTHOR;　Zewei Chen, Makoto Arita, Katsuhiko Saito, Tooru Tanaka, Qixin Guo*
  
• Influence of substrate, process conditions, and post-annealing temperature on the properties of ZnO thin films grown by SILAR method;　2021/02
  ANNOUNCEMENT INFO.;　ACS omega 6, 2665-2674, 2021
  AUTHOR;　Ghos , Bijoy Chandra ; Farhad, Syed Farid Uddin; Patwary, Md Abdul Majed; Majumder, Shanta ; Hossain , Md. Alauddin ; Tanvir, Nazmul Islam; Rahman , Mohammad Atiqur ; Tanaka, Tooru; Guo, Qixin
  
• Realization of red electroluminescence from Ga2O3:Eu/Si based light-emitting diodes;　2021/01
  ANNOUNCEMENT INFO.;　Superlattices and Microstructures,150, 106814, 2021.
  AUTHOR;　Yafei Huang, Katsuhiko Saito, Tooru Tanaka, and Qixin Guo*
  
• Improvement of sensing sensitivity based on green emissions from Er-doped (AlGa)2O3 films;　2021/01
  ANNOUNCEMENT INFO.;　Journal of Luminescence, 232, 117879 (2021).
  AUTHOR;　Gaofeng Deng, Katsuhiko Saito, Tooru Tanaka, and Qixin Guo*
  
• Efficient temperature sensor based on green emissions from Er-doped β-Ga2O3 thin film;　2020/10
  ANNOUNCEMENT INFO.;　AIP Advances 10, 105227 (2020).
  AUTHOR;　Gaofeng Deng, Katsuhiko Saito, Tooru Tanaka, and Qixin Guo*
  
• Formation of metastable bc8 phase from crystalline Si0.5Ge0.5 by high-pressure torsion;　2020/09
  ANNOUNCEMENT INFO.;　Materials Characterization, 169, 110590 (2020).
  AUTHOR;　Yoshifumi Ikoma, Terumasa Yamasaki, Takahiro Shimizu, Marina Takaira, Masamichi Kohno, Qixin Guo, Martha R. McCartney, David J. Smith, Yasutomo Arai, Zenji Horita
  
• Impacts of oxygen radical ambient on structural and optical properties of (AlGa)2O3 films deposited by pulsed laser deposition;　2020/06
  ANNOUNCEMENT INFO.;　AIP Advances 10, 065125 (2020)
  AUTHOR;　Fabi Zhang, Congyu Hu, Makoto Arita, Katsuhiko Saito, Tooru Tanaka , and Qixin Guo*
  
• Enhanced green emission from Er-doped (AlGa)2O3 films grown by pulsed laser deposition;　2020/05
  ANNOUNCEMENT INFO.;　Japanese Journal of Applied Physics 59, 051007, 2020
  AUTHOR;　Gaofeng Deng, Fabi Zhang, Katsuhiko Saito, Tooru Tanaka, Makoto Arita, and Qixin Guo*
  
• Realization of rocksalt Zn1-: XCdxO thin films with an optical band gap above 3.0 eV by molecular beam epitaxy;　2020/04
  ANNOUNCEMENT INFO.;　CrystEngComm, 22, 2781, 2020.
  AUTHOR;　Jang, H.C., Saito, K., Guo, Q., Yu, K.M., Walukiewicz, W., Tanaka, T.
  
• Effect of oxygen flow rate on properties of Cu4O3 thin films fabricated by radio frequency magnetron sputtering;　2020/04
  ANNOUNCEMENT INFO.;　Journal of Applied Physics,127, 085302, 2020.
  AUTHOR;　Patwary, M.A.M., Ho, C.Y., Saito, K., Guo, Q., Yu, K.M., Walukiewicz, W., Tanaka, T.
  
• Conductive transparent (InGa)2O3 film as host for rare earth Eu;　2020/04
  ANNOUNCEMENT INFO.;　AIP Advances,10,025024, 2020.
  AUTHOR;　Zhang, F., Saito, K., Tanaka, T., Wang, X., Guo, Q. *
  
• An unexpected surfactant role of immiscible nitrogen in the structural development of silver nanoparticles: An experimental and numerical investigation;　2020/04
  ANNOUNCEMENT INFO.;　Nanoscale,12, 1749, 2020.
  AUTHOR;　Yun, J., Chung, H.-S., Lee, S.-G., Bae, J.-S., Hong, T.E., Takahashi, K., Yu, S.M., Park, J.f, Guo, Q., Lee, G.-H., Han, S.Z., Ikoma, Y., Choi, E.-A.
  
• Nitrogen Doping Effect in Cu4O3 Thin Films Fabricated by Radio Frequency Magnetron Sputtering;　2020/01
  ANNOUNCEMENT INFO.;　physica status solidi b, 257, 1900363, 2020.
  AUTHOR;　Md Abdul Majed Patwary, Katsuhiko Saito, Qixin Guo, Tooru Tanaka, Kin Man Yu, Wladek Walukiewicz
  
• Low temperature growth of (AlGa)2O3 films by oxygen radical assisted pulsed laser deposition;　2019/12
  ANNOUNCEMENT INFO.;　CrystEngComm, 22, 142, 2019.
  AUTHOR;　Fabi Zhang, Congyu Hu, Makoto Arita, Katsuhiko Saito, Tooru Tanaka, and Qixin Guo*
  
• Composition and Properties Control Growth of High-Quality GaOx Ny Film by One-Step Plasma-Enhanced Atomic Layer Deposition;　2019/09
  ANNOUNCEMENT INFO.;　Chemistry of Materials, 31, 7405, 2019.
  AUTHOR;　Ma, H.-P., Li, X.-X., Yang, J.-H., Cheng, P., Huang, W., Zhu, J., Jen, T.-C., Guo, Q., Lu, H.-L., Zhang, D.W.
  
• Low-temperature epitaxial growth of high-quality GaON films on ZnO nanowires for superior photoelectrochemical water splitting;　2019/09
  ANNOUNCEMENT INFO.;　Nano Energy 66 (2019) 104089.
  AUTHOR;　Ma, H.-P., Yang, J.-H., Tao, J.-J., Yuan, K.-P., Cheng, P.-H., Huang, W., Wang, J.-C., Guo, Q.-X., Lu, H.-L., Zhang, D.W.
  
• Low temperature growth of Ga2O3 films on sapphire substrates by plasma assisted pulsed laser deposition;　2019/08
  ANNOUNCEMENT INFO.;　AIP Advances 9, 085022 (2019)
  AUTHOR;　Congyu Hu, Fabi Zhang, Katsuhiko Saito, Tooru Tanaka, and Qixin Guo*
  
• Cl-doping effect in ZnTe1-xOx highly mismatched alloys for intermediate band solar cells;　2019/06
  ANNOUNCEMENT INFO.;　Journal of Applied Physics 125, 243109 (2019).
  AUTHOR;　Tooru Tanaka, Kento Matsuo, Katsuhiko Saito, Qixin Guo, Takeshi Tayagaki, Kin Man Yu, and Wladek Walukiewicz
  
• Low driven voltage red LEDs using Eu-doped Ga2O3 films on GaAs;　2019/06
  ANNOUNCEMENT INFO.;　Appl. Phys. Express 12, 061009, 2019
  AUTHOR;　Zhengwei Chen, Daoyou Guo, Peigang Li, Zewei Chen, Weihua Tang, and Qixin Guo
  
• Three-dimensional band structure and surface electron accumulation of rs-Cd x Zn 1− x O studied by angle-resolved photoemission spectroscopy;　2019/05
  ANNOUNCEMENT INFO.;　Scientific reports 9, 8026, 2019.
  AUTHOR;　Kazutoshi Takahashi, Masaki Imamura, Jang Hyo Chang, Tooru Tanaka, Katsuhiko Saito, Qixin Guo, Kin Man Yu, Wladek Walukiewicz
  
• Growth properties of gallium oxide on sapphire substrate by plasma-assisted pulsed laser deposition;　2019/03
  ANNOUNCEMENT INFO.;　Journal of Semiconductors, 40, 122801, 2019.
  AUTHOR;　Congyu Hu, Katsuhiko Saito, Tooru Tanaka, and Qixin Guo*
  
• Influence of oxygen flow rate and substrate positions on properties of Cu-oxide thin films fabricated by radio frequency magnetron sputtering using pure Cu target;　2019/03
  ANNOUNCEMENT INFO.;　Thin Solid Films 675, 59-65, 2019
  AUTHOR;　Md Abdul Majed Patwary; Katsuhiko Saito; Qixin Guo; Tooru Tanaka
  
• Chemical, optical, and electrical characterization of Ga2O3 thin films grown by plasma-enhanced atomic layer deposition;　2019/02
  ANNOUNCEMENT INFO.;　Current Applied Physics 19, 72-81, 2019
  AUTHOR;　Xing Li, Hong-Liang Lu, Hong-Ping Ma, Jian-Guo Yang, Jin-Xin Chen, Wei Huang, Qixin Guo, Ji-Jun Feng, David Wei Zhang
  
• Precise control of the microstructural, optical, and electrical properties of ultrathin Ga2O3 film through nanomixing with few atom-thick SiO2 interlayer via plasma enhanced atomic layer deposition;　2018/12
  ANNOUNCEMENT INFO.;　Journal of Materials Chemistry C 6, 12518-12528, 2018
  AUTHOR;　Hong-Ping Ma, Hong-Liang Lu, Tao Wang, Jian-Guo Yang, Xing Li, Jin-Xin Chen, Jiajia Tao, Jingtao Zhu, Qixin Guo, David Wei Zhang
  
• Superexchange interaction contribution to the Zeeman splitting of the intra-4f-shell luminescence band in Gd3Ga4FeO12: Yb3+, Er3+;　2018/11
  ANNOUNCEMENT INFO.;　Optical Materials Express 8, 3338-3350, 2018.
  AUTHOR;　Tong, L., Han, Y., Zhang, K., Gao, H., Guo, Q., Fan, T., Zhang, D.
  
• Crystal and electronic structural changes during annealing in severely deformed Si containing metastable phases formed by high-pressure torsion;　2018/09
  ANNOUNCEMENT INFO.;　Applied Physics Letters,113, 101904, 2018
  AUTHOR;　Yoshifumi Ikoma, Bumsoo Chon, Terumasa Yamasaki ,Kazutoshi Takahashi, Katsuhiko Saito, Qixin Guo, Zenji Horita
  
• Structural and Electrical Properties of Ga2O3 Films Deposited under Different Atmospheres by Pulsed Laser Deposition;　2018/09
  ANNOUNCEMENT INFO.;　Journal of ELECTRONIC MATERIALS,47, 6635-6640, 2018.
  AUTHOR;　FABI ZHANG, HAIOU LI, and QIXIN GUO*
  
• Cl-doping in highly mismatched ZnTe1-xOx alloys for intermediate band solar cells;　2018/05
  ANNOUNCEMENT INFO.;　2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017, 25 May 2018, Pages 1-3.
  AUTHOR;　Tanaka, T., Tsutsumi, S., Okano, Y., Saito, K., Guo, Q., Nishio, M., Yu, K.M., Walukiewicz, W.
  
• Ultraviolet emission from MgZnO films and ZnO/MgZnO single quantum wells grown by pulsed laser deposition;　2018/05
  ANNOUNCEMENT INFO.;　Journal of Crystal Growth,483, 39-43, 2018.
  AUTHOR;　Xu Wang, Zhengwei Chen, Congyu Hu, Katsuhiko Saito, Tooru Tanaka, Mitsuhiro Nishio, Qixin Guo⁠*
  
• Improved photovoltaic properties of ZnTeO-based intermediate band solar cells;　2018/04
  ANNOUNCEMENT INFO.;　Proceedings of SPIE - The International Society for Optical Engineering 10527, 105270P, 2018.
  AUTHOR;　Tanaka, T., Saito, K., Guo, Q., Yu, K.M., Walukiewicz, W.
  
• Evolution of optical properties and band structure from amorphous to crystalline Ga2O3 films;　2018/04
  ANNOUNCEMENT INFO.;　AIP Advances 8, 045112, 2018
  AUTHOR;　Zhang, F., Li, H., Cui, Y.-T., Li, G.-L., Guo, Q.*
  
• The impact of dopant contents on structures, morphologies and optical properties of Eu doped Ga2O3 films on GaAs substrate;　2018/04
  ANNOUNCEMENT INFO.;　Journal of Luminescence, 194, 374-378, 2018.
  AUTHOR;　Zhengwei Chen, Kazuo Nishihagi, Xu Wang, Congyu Hu, Makoto Arita, Katsuhiko Saito, Tooru Tanaka, Qixin Guo*
  
• Local Bi-O bonds correlated with infrared emission properties in triply doped Gd2.95Yb0.02Bi0.02Er0.01Ga5O12 via temperature-dependent Raman spectra and x-ray absorption fine structure analysis;　2018/02
  ANNOUNCEMENT INFO.;　Journal of Physics Condensed Matter, 30, 125901, 2018.
  AUTHOR;　Tong, L., Saito, K., Guo, Q., Zhou, H., Guo, X., Fan, T., Zhang, D.
  
• Regulation mechanism of bottleneck size on Li+ migration activation energy in garnet-type Li7La3Zr2O12;　2018/01
  ANNOUNCEMENT INFO.;　Electrochimica Acta 261, 137-142, 2018.
  AUTHOR;　Yanhua Zhang; Fei Chen; Junyang Li; Lianmeng Zhang; Jiajun Gu; Di Zhang; Katsuhiko Saito; Qixin Guo; Ping Luo; Shijie Dong
  
• Photoluminescence of ZnTe/ZnMgTe multiple quantum well structures grown on ZnTe substrates by molecular beam epitaxy;　2018/01
  ANNOUNCEMENT INFO.;　Superlattices and Microstructures,114, 192-199, 2018
  AUTHOR;　Tooru Tanaka, Hiroshi Ohshita, Katsuhiko Saito, Qixin Guo
  
• Defect induced visible-light-activated near-infrared emissions in Gd3−x−y−zYbxBiyErzGa5O12;　2017/11
  ANNOUNCEMENT INFO.;　Journal of Applied Physics, 122, 173103, 2017.
  AUTHOR;　Liping Tong, Katsuhiko Saito, Qixin Guo, Han Zhou, Tongxiang Fan, Di Zhang
  
• Ultraviolet detectors based on (GaIn)2O3 films;　2017/11
  ANNOUNCEMENT INFO.;　Optical Materials Express,7, pp.3769-3779, 2017.
  AUTHOR;　Fabi Zhang, Haiou Li, Makoto Arita, Qixin Guo*
  
• Characteristics of thulium doped gallium oxide films grown by pulsed laser deposition;　2017/11
  ANNOUNCEMENT INFO.;　Thin Solid Films, 639, 123-126, 2017
  AUTHOR;　Qixin Guo, Kazuo Nishihagi, Zhengwei Chen, Katsuhiko Saito, Tooru Tanaka
  
• Efficient pure green emission from Er doped β-Ga2O3 films (Invited Review Article);　2017/08
  ANNOUNCEMENT INFO.;　CrystEngComm, 19, 4448-4458, 2017.
  AUTHOR;　Chen, Z., Saito, K., Tanaka, T., Guo, Q.*
  
• Structural properties of Eu doped gallium oxide films;　2017/07
  ANNOUNCEMENT INFO.;　Materials Research Bulletin, 94, pp. 170-173, 2017.
  AUTHOR;　Nishihagi, K., Chen, Z., Saito, K., Tanaka, T., Guo, Q.*
  
• Growth and characterization of Zn1-xCdxTe1-yOy highly mismatched alloys for intermediate band solar cells;　2017/05
  ANNOUNCEMENT INFO.;　Solar Energy Materials and Solar Cells, 169, pp. 1-7, 2017.
  AUTHOR;　Tanaka, T., Terasawa, T., Okano, Y., Tsutsumi, S., Saito, K., Guo, Q., Nishio, M., Yu, K.M., Walukiewicz, W.
  
• Improved Open-Circuit Voltage and Photovoltaic Properties of ZnTeO-Based Intermediate Band Solar Cells With n-Type ZnS Layers;　2017/05
  ANNOUNCEMENT INFO.;　IEEE Journal of Photovoltaics, 7, pp.1024-1030, 2017.
  AUTHOR;　Tanaka, T., Yu, K.M., Okano, Y., Tsutsumi, S., Haraguchi, S., Saito, K., Guo, Q., Nishio, M., Walukiewicz, W.
  
• Growth of ZnMgSeTe nearly lattice-matched to ZnTe and p-type doping by low-pressure MOVPE;　2017/04
  ANNOUNCEMENT INFO.;　Journal of Crystal Growth, 468, pp. 671-675, 2017.
  AUTHOR;　Saito, K., Nishio, M., Nakatsuru, Y., Shono, T., Matsuo, Y., Tomota, A., Tanaka, T., Guo, Q.X.
  
• Photoluminescence and electrical properties of P-doped ZnTe layers grown by low pressure MOVPE;　2017/04
  ANNOUNCEMENT INFO.;　Journal of Crystal Growth, 468, pp. 666-670, 2017
  AUTHOR;　Nishio, M., Saito, K. Nakatsuru, Y., Shono, T., Matsuo, Y., Tmota, A., Tanaka, T., Guo, Q.X.
  
• Critical slowing of quantum atomic H/D ratio with features of multiferroicity in the geometrically frustrated system Co2(OD)3Cl/Co2(OH)3Cl;　2017/04
  ANNOUNCEMENT INFO.;　Phys. Rev. B,95 (2), 024111, 2017.
  AUTHOR;　Xing-Liang Xu, Dong-Dong Meng, Xu-Guang Zheng, Ichihiro Yamauchi, Isao Watanabe, and Qi-Xin Guo
  
• Phase transformation of germanium by processing through high-pressure torsion: strain and temperature effects;　2017/01
  ANNOUNCEMENT INFO.;　Philosohical Magazine Letters 97(1), pp. 27-34, 2017.
  AUTHOR;　Ikoma, Y., Kumano, K., Edalati, K., Saito, K., Guo, Q., Horita, Z.
  
• Temperature-dependent raman scattering in cubic (InGa)2O3 thin films;　2017/01
  ANNOUNCEMENT INFO.;　Journal of Alloys and Compounds, 690, pp. 287-292, 2017.
  AUTHOR;　Xu Wang, Zhengwei Chen, Katsuhiko Saito, Tooru Tanaka, Mitsuhiro Nishio, Qixin Guo*
  
• Band alignment of Ga2O3/Si heterojunction interface measured by X-ray photoelectron spectroscopy;　2016/09
  ANNOUNCEMENT INFO.;　Applied Physics Letters, 109, 102106, 2016.
  AUTHOR;　Zhengwei Chen, Kazuo Nishihagi , Xu Wang , Katsuhiko Saito , Tooru Tanaka , Mitsuhiro Nishio , Makoto Arita , Qixin Guo*
  
• Toward controlling the carrier density of Si doped Ga2O3 films by pulsed laser deposition;　2016/09
  ANNOUNCEMENT INFO.;　Applied Physics Letters, 109, 102105, 2016
  AUTHOR;　Fabi Zhang , Makoto Arita , Xu Wang , Zhengwei Chen , Katsuhiko Saito , Tooru Tanaka , Mitsuhiro Nishio , Teruaki Motooka , Qixin Guo*
  
• 直接接合技術を用いたp-ZnTe/n-ZnOヘテロ接合界面の作製と電気特性評価;　2016/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• Observation of low voltage driven green emission from erbium doped Ga2O3 light-emitting devices;　2016/08
  ANNOUNCEMENT INFO.;　Applied Physics Letters, 109, 022107, 2016
  AUTHOR;　Zhengwei Chen, Xu Wang , Fabi Zhang , Shinji Noda , Katsuhiko Saito , Tooru Tanaka , Mitsuhiro Nishio , Makoto Arita , Qixin Guo*
  
• Highly transparent conductive Ga doped ZnO films in the near-infrared wavelength range;　2016/07
  ANNOUNCEMENT INFO.;　Journal of Materials Science: Materials in Electronic, 27, pp. 9291-9296, 2016
  AUTHOR;　Zhengwei Chen; Katsuhiko Saito; Tooru Tanaka; Mitsuhiro Nishio; Qixin Guo*
  
• Influence of substrate temperature on the properties of (AlGa)2O3 thin films prepared by pulsed laser deposition;　2016/06
  ANNOUNCEMENT INFO.;　Ceramics International, 42, pp. 12783-12788, 2016.
  AUTHOR;　Xu Wang, Zhengwei Chen, Fabi Zhang, Katsuhiko Saito, Tooru Tanaka, Mitsuhiro Nishio, Qixin Guo*
  
• Large-scale ordering of nanoparticles using scoelastic shear processing;　2016/05
  ANNOUNCEMENT INFO.;　Nature Communications, 7, 11661, 2016.
  AUTHOR;　Qibin Zhao, Chris Finlayson, David Snoswell, Andrew Haines, Christian Schäfer, Peter Spahn, Goetz Hellmann, Andrei Petukhov, Lars Herrmann, Pierre Burdet, Paul Midgley, Simon Butler, Malcolm Mackley, Qixin Guo, and Jeremy Baumberg
  
• Temperature dependence of luminescence spectra in europium doped Ga2O3 film;　2016/04
  ANNOUNCEMENT INFO.;　Journal of Luminescence, 177, pp. 48-53, 2016.
  AUTHOR;　Zhengwei Chen, Xu Wang, Fabi Zhang, Shinji Noda, Katsuhiko Saito, Tooru Tanaka, Mitsuhiro Nishio, Qixin Guo*
  
• Influence of source transport rate upon fractions of Mg and Se in Zn1-xMgxSeyTe1–y layers grown by metalorganic vapor phase epitaxy;　2016/03
  ANNOUNCEMENT INFO.;　physica status solidi (c), 13, 443-447 , 2016.
  AUTHOR;　Katsuhiko Saito, Masakatsu Abiru, Eiichiro Mori, Yasuhiro Araki, Daichi Tanaka, Tooru Tanaka, Qixin Guo and Mitsuhiro Nishio
  
• Low pressure MOVPE growth and characterization of ZnTe homoepitaxial layers;　2016/03
  ANNOUNCEMENT INFO.;　Physica Status Solidi (c), 13, 439-442 (2016).
  AUTHOR;　Mitsuhiro Nishio, Katsuhiko Saito, Masakatsu Abiru, Eiichiro Mori, Yasuhiro Araki, Daichi Tanaka, Tooru Tanaka, and Qixin Guo
  
• The impact of growth temperature on structural and optical properties of catalyst-free β-Ga2O3 nanostructures;　2016/03
  ANNOUNCEMENT INFO.;　Materials Research Express, 3, 025003, 2016
  AUTHOR;　Chen, Zhengwei; Wang, Xianghu; Saito, Katsuhiko; Tanaka, Tooru; Nishio, Mitsuhiro; Guo, Qixin*
  
• Temperature dependence of Raman scattering in β-(AlGa)2O3 thin films;　2016/02
  ANNOUNCEMENT INFO.;　AIP Advances, 6, 015111, 2016
  AUTHOR;　Xu Wang, Zhengwei Chen , Fabi Zhang , Katsuhiko Saito , Tooru Tanaka , Mitsuhiro Nishio , Qixin Guo*
  
• Compositional dependence of optical transition energies in highly mismatched Zn1-xCdxTe1-yOy alloys;　2016/01
  ANNOUNCEMENT INFO.;　Applied Physics Express, 9, 021202, 2016.
  AUTHOR;　Tooru Tanaka, Kosuke Mizoguchi, Toshiki Terasawa, Yuuki Okano, Katsuhiko Saito, Qixin Guo, Mitsuhiro Nishio, Kin Man Yu, Wladek Walukiewicz
  
• Effects of dopant contents on structural, morphological and optical properties of Er doped Ga2O3 films;　2016/01
  ANNOUNCEMENT INFO.;　Superlattices and Microstructures, 90, 207-214, 2016.
  AUTHOR;　Zhengwei Chen; Xu Wang; Shinji Noda; Katsuhiko Saito; Tooru Tanaka; Mitsuhiro Nishio; Makoto Arita; Qixin Guo*
  
• Low temperature growth of europium doped Ga2O3 luminescent films;　2015/12
  ANNOUNCEMENT INFO.;　Journal of Crystal Growth, 430, 28-33, 2015.
  AUTHOR;　Zhengwei Chen, Katsuhiko Saito, Tooru Tanaka, Mitsuhiro Nishio, Makoto Arita, Qixin Guo*
  
• Photoluminescence characteristics of ZnTe bulk crystal and ZnTe epilayer grown on GaAs substrate by MOVPE;　2015/11
  ANNOUNCEMENT INFO.;　Chin. Phys. B, 24, 124207-1-6. 2015.
  AUTHOR;　Haiyan Lv, Lei Zhang, Qi Mu, Ziwu Ji, Yuanjie Lv, Zhihong Feng, Xiangang Xu, Qixin Guo*
  
• Electrical properties of Si doped Ga2O3 films grown by pulsed laser deposition;　2015/11
  ANNOUNCEMENT INFO.;　Journal of Materials Science: Materials in Electronics, 26, 9624-9629, 2015.
  AUTHOR;　Fabi Zhang; Katsuhiko Saito; Tooru Tanaka; Mitsuhiro Nishio Nishio; Qixin Guo*
  
• Allotropic phase transformation and photoluminescence of germanium nanograins processed by high-pressure torsion;　2015/11
  ANNOUNCEMENT INFO.;　Journal of Materials Science, 58, 138-143, 2015.
  AUTHOR;　Yoshifumi Ikoma, Takamitsu Toyota; Yoshimasa Ejiri; Katsuhiko Saito; Qixin Guo; Zenji Horita
  
• Energy band bowing parameter in MgZnO alloys;　2015/07
  ANNOUNCEMENT INFO.;　Applied Physics Letters, 107, 022111-1-5, 2015
  AUTHOR;　Xu Wang , Katsuhiko Saito , Tooru Tanaka , Mitsuhiro Nishio , Takashi Nagaoka , Makoto Arita , Qixin Guo*
  
• Electronic structure of β-Ga2O3 single crystals investigated by hard X-ray photoelectron spectroscopy;　2015/07
  ANNOUNCEMENT INFO.;　Applied Physics Letters,107, 022109-1-5, 2015.
  AUTHOR;　Guoling Li , Fabi Zhang , Yi-Tao Cui , Hiroshi Oji , J.-Y. Son , Qixin Guo*
  
• Deuterium ordering found in new ferroelectric compound Co2(OD)3Cl;　2015/07
  ANNOUNCEMENT INFO.;　Materials Research Express 2, 076101-1-7, 2015.
  AUTHOR;　Meng, Dong-Dong; Zheng, Xu-Guang; Liu, Xiaodong; Xu, Xingliang; Guo, Qixin
  
• Enhanced electrochemical performance of Ti substituted P2-Na2/3Ni1/4Mn3/4O2 cathode material for sodium ion batteries;　2015/05
  ANNOUNCEMENT INFO.;　, Electrochimica Acta 170, pp. 171-181, 2015
  AUTHOR;　Wenwen Zhao, Akinobu Tanaka, Kyoko Momosaki, Shinji Yamamoto, Fabi Zhang, Qixin Guo, Hideyuki Noguchi
  
• The impacts of growth temperature on morphologies, compositions and optical properties of Mg-doped ZnO nanomaterials by chemical vapor deposition;　2015/02
  ANNOUNCEMENT INFO.;　Journal of Alloys and Compounds, 622, pp. 440-445, 2015.
  AUTHOR;　X.H. Wang, L.Q. Huang, L.J. Niu, R.B. Li, D.H. Fan, F.B. Zhang, Z.W. Chen, X. Wang and Q.X. Guo
  
• Compositions of Mg and Se, surface morphology, roughness and Raman property of Zn1−xMgxSeyTe1−y layers grown at various substrate temperatures or dopant transport rates by MOVPE;　2015/02
  ANNOUNCEMENT INFO.;　Journal of Crystal Growth, 414, pp. 114-118, 2015.
  AUTHOR;　Mitsuhiro Nishio, Katsuhiko Saito, Kensuke Urata, Yasuhiro Okamoto, Daichi Tanaka, Yasuhiro Araki, Masakatsu Abiru, Eiichiro Mori, Tooru Tanaka, Qixin Guo
  
• Toward the understanding of annealing effects on (GaIn)2O3 films;　2015/02
  ANNOUNCEMENT INFO.;　Thin Solid Films, 578, pp. 1-6, 2015.
  AUTHOR;　Fabi Zhang, Hideki Jan, Katsuhiko Saito, Tooru Tanaka, Mitsuhiro Nishio, Takashi Nagaoka, Makoto Arita, Qixin Guo*
  
• Lower temperature growth of single phase MgZnO films in all Mg content range;　2015/01
  ANNOUNCEMENT INFO.;　Journal of Alloys and Compounds, 627, pp. 383-387, 2015.
  AUTHOR;　Xu Wang, Katsuhiko Saito, Tooru Tanaka, Mitsuhiro Nishio, Qixin Guo*
  
• Terahertz surface emission from Cu2ZnSnSe4 thin film photovoltaic material excited by femtosecond laser pulses;　2014/12
  ANNOUNCEMENT INFO.;　Applied Physics Letters, 105, 231104-1-3, 2014.
  AUTHOR;　Zhenyu Zhao, Gudrun G Niehues, Stefan Funkner, Elmer Surat Estacio, Qifeng Han, Kohji Yamamoto, Jingtao Zhang, Wangzhou Shi, Qixin Guo, Masahiko Tani
  
• Wide bandgap engineering of (AlGa)2O3 films;　2014/11
  ANNOUNCEMENT INFO.;　Applied Physics Letters, 105, 162107-1-5, 2014.
  AUTHOR;　Fabi Zhang, Katsuhiko Saito, Tooru Tanaka, Mitsuhiro Nishio, Makoto Arita, and Qixin Guo*
  
• Biomass-derived hierarchical porous CdS/M/TiO2 (M = Au, Ag, pt, pd) ternary heterojunctions for photocatalytic hydrogen evolution;　2014/10
  ANNOUNCEMENT INFO.;　International Journal of Hydrogen Energy, 39, 16293-16301, 2014.
  AUTHOR;　Zhou, H., Pan, J., Ding, L., Tang, Y., Ding, J., Guo, Q., Fan, T., Zhang, D.
  
• Electrical properties and emission mechanisms of Zn-doped β-Ga2O3 films;　2014/07
  ANNOUNCEMENT INFO.;　Journal of Physics and Chemistry of Solids, 75, 1201-1204, 2014.
  AUTHOR;　X.H. Wang, F.B. Zhang, K. Saito, T. Tanaka, M. Nishio and Q.X. Guo*
  
• Thermal annealing impact on crystal quality of (GaIn)2O3 alloys;　2014/07
  ANNOUNCEMENT INFO.;　Journal of Alloys and Compounds, 614, 173-176, 2014
  AUTHOR;　Fabi Zhang, Katsuhiko Saito, Tooru Tanaka, Mitsuhiro Nishio, and Qixin Guo*
  
• Fabrication of nanograined silicon by high-pressure torsion;　2014/06
  ANNOUNCEMENT INFO.;　Journal of Material Science,49 (19), pp. 6565-6569, 2014. DOI 10.1007/s10853-014-8250-z
  AUTHOR;　 Yoshifumi Ikoma, Kazunori Hayano, Kaveh Edalati, Katsuhiko Saito, Qixin Guo, Zenji Horita, Toshihiro Aoki, David J. Smith
  
• Investigation of the Multiferroic Transition in CuO　Single Crystal using Dielectric and Raman　Spectroscopy Measurements;　2014/06
  ANNOUNCEMENT INFO.;　JPS Conf. Proc. 3, 014039 (2014), http://dx.doi.org/10.7566/JPSCP.3.014039
  AUTHOR;　Dongdong MENG, Xu-Guang ZHENG, Xingliang XU, Jun NAKAUCHI, Masayoshi FUJIHALA, Xiaodong LIU, Qixin GUO, Makoto MAKI
  
• Leaf-inspired hierarchical porous CdS/Au/N-TiO2 heterostructures for visible light photocatalytic hydrogen evolution;　2014/04
  ANNOUNCEMENT INFO.;　Applied Catalysis B: Environmental, 147, 221-228, 2014.
  AUTHOR;　Zhou, H., Ding, L., Fan, T., Ding, J., Zhang, D., Guo, Q.
  
• Nanograin formation of GaAs by high-pressure torsion;　2014/03
  ANNOUNCEMENT INFO.;　Philosophical Magazine Letters, 94, 1 , 2014.
  AUTHOR;　Yoshifumi Ikoma, Yoshimasa Ejiri, Kazunori Hayano, Katsuhiko Saito, Qixin Guo and Zenji Horita
  
• The effects of substrate temperature upon the compositions of Mg and Se in Zn1-xMgxSeyTe1-y layer grown by MOVPE;　2014/03
  ANNOUNCEMENT INFO.;　physica status solidi (c), 11, 1202-1205, 2014.
  AUTHOR;　M. Nishio, K. Saito, R. Ito, K. Tanaka, K. Urata, Y. Nakamura, T. Tanaka, Q.X. Guo
  
• Wide bandgap engineering of (GaIn)2O3 films;　2014/03
  ANNOUNCEMENT INFO.;　Solid State Communications, 186, pp. 28-31, 2014.
  AUTHOR;　Fabi Zhang, Katsuhiko Saito, Tooru Tanaka, Mitsuhiro Nishio, and Qixin Guo*
  
• Fabrication of ZnO/ZnTe heterojunction by using a Room Temperature Direct Bonding technology;　2014/02
  ANNOUNCEMENT INFO.;　physica status solidi (c), 11, 1218-1220, 2014.
  AUTHOR;　Hajime AKIYAMA, Katsuhiko SAITO, Tooru TANAKA, Mitsuhiro NISHIO, and Qixin GUO*
  
• Growth of InGaN layers on (111) silicon substrates by reactive sputtering;　2014/01
  ANNOUNCEMENT INFO.;　Journal of Alloys and Compounds, 587, pp. 217-221, 2014.
  AUTHOR;　Qixin Guo, Tomoya Nakao, Takaya Ushijima, Wangzhou Shi, Feng Liu, Katsuhiko Saito, Tooru Tanaka, and Mitsuhiro Nishio
  
• Photogenerated Current By Two-Step Photon Excitation in ZnTeO Intermediate Band Solar Cells with n-ZnO Window Layer;　2014/01
  ANNOUNCEMENT INFO.;　IEEE Journal of Photovoltaics, 4 (1), 6642092, pp. 196-201, 2014.
  AUTHOR;　Tanaka, T., Miyabara, M., Nagao, Y., Saito, K., Guo, Q., Nishio, M., Yu, K.M., Walukiewicz, W.
  
• Structural and optical properties of Ga2O3 films on sapphire substrates by pulsed laser deposition;　2014/01
  ANNOUNCEMENT INFO.;　Journal of Crystal Growth, 387, pp. 96-100, 2014.
  AUTHOR;　F.B. Zhang, K. Saito, T. Tanaka, M. Nishio, and Q.X. Guo*
  
• Recombination dynamics and carrier lifetimes in highly mismatched ZnTeO alloys;　2013/12
  ANNOUNCEMENT INFO.;　 Applied Physics Letters 103, 261905 (2013); doi: 10.1063/1.4858968
  AUTHOR;　Yan-Cheng Lin, Ming-Jui Tasi, Wu-Ching Chou, Wen-Hao Chang, Wei-Kuo Chen, Tooru Tanaka, Qixin Guo, and Mitsuhiro Nishio
  
• Effect of reactor pressure upon photoluminescence properties of ZnTe homoepitaxial layer;　2013/09
  ANNOUNCEMENT INFO.;　OPTOELECTRONICS AND ADVANCED MATERIALS – RAPID COMMUNICATIONS Vol. 7, No. 9-10, September - October 2013, p. 730 - 733
  AUTHOR;　SHULAI HUANG, ZIWU JI, LEI ZHANG, MINGSHENG XU, SHUANG QU, XIANGANG XU, QIXIN GUO
  
• Raman spectroscopic study of the frustrated spin 1/2 antiferromagnet clinoatacamite;　2013/06
  ANNOUNCEMENT INFO.;　Journal of Physics: Condensed Matter, Volume 25, 256003, (2013). doi:10.1088/0953-8984/25/25/256003
  AUTHOR;　Xiao-Dong Liu, Xu-Guang Zheng, Dong-Dong Meng, Xing-Liang Xu and Qi-Xin Guo
  
• Surface morphologies and photoluminescence properties of undoped and P-doped ZnTe layers grown by metalorganic vapor phase epitaxy;　2013/05
  ANNOUNCEMENT INFO.;　Journal of Crystal Growth,370, 348-352, 2013.
  AUTHOR;　Nishio, M., Hayashida, Y., Saito, K., Tanaka, T., Guo, Q.
  
• Effects of annealing treatment upon electrical and photoluminescence properties of phosphorus-doped ZnMgTe epilayers grown by metalorganic vapor phase epitaxy;　2013/05
  ANNOUNCEMENT INFO.;　Journal of Crystal Growth, 370, 342-347, 2013.
  AUTHOR;　Mitsuhiro Nishio, Keita Kai, Ryota Fujiki, Katsuhiko Saito, Tooru Tanaka, Qixin Guo
  
• Effect of substrate temperature on optical properties and strain distribution of ZnTe epilayer on (100) GaAs substrates;　2013/05
  ANNOUNCEMENT INFO.;　Thin Solid Films, 536, pp. 240-243, 2013
  AUTHOR;　Lei Zhang, Ziwu Ji*, Shulai Huang, Huining Wang, Hongdi Xiao, Yujun Zheng, Xiangang Xu, Yun Lu, Qixin Guo**
  
• Low Temperature Raman Spectroscopic Study on γ-Cu2(OH)3Cl;　2013/05
  ANNOUNCEMENT INFO.;　Applied Mechanics and Materials,441-342, pp.320-323.
  AUTHOR;　Xiao Dong Liu, Dong Dong Meng, Xu Guang Zheng, Xing Liang Xu, Qi Xin Guo
  
• Epitaxial Growth of ZnTe Layers on ZnO Bulk Substrates by Metalorganic Vapor Phase Epitaxy;　2013/04
  ANNOUNCEMENT INFO.;　Japanese Journal of Applied Physics, 52, 040206, 2013.
  AUTHOR;　Hajime AKIYAMA, Hiroyuki HIRANO, Katsuhiko SAITO, Tooru TANAKA, Mitsuhiro NISHIO, and Qixin GUO*
  
• Effects of oxygen gas pressure on properties of iron oxide films grown by pulsed laser deposition;　2013/03
  ANNOUNCEMENT INFO.;　Journal of Alloys and Compounds, 552 (2013) 1–5.
  AUTHOR;　Qixin Guo, Wangzhou Shi, Feng Liu, Makoto Arita, Yoshifumi Ikoma, Katsuhiko Saito, Tooru Tanaka, and Mitsuhiro Nishio
  
• Structural integration design for enhanced photoluminescence in butterfly scales;　2013/03
  ANNOUNCEMENT INFO.;　Soft Matter, 9, 2614-2620, 2013. DOI: 10.1039/C2SM27220B
  AUTHOR;　Kuilong Yu , Shuai Lou , Jian Ding , Di Zhang , Qixin Guo and Tongxiang Fan
  
• Molecular beam epitaxial growth of ZnCdTeO epilayers for intermediate band solar cells;　2013/03
  ANNOUNCEMENT INFO.;　Journal of Crystal Growth 378, pp. 259-262 (2013).
  AUTHOR;　Tooru Tanaka, Yasuhiro Nagao, Tomohiro Mochinaga, Katsuhiko Saito, Qixin Guo, Mitsuhiro Nishio, Kin M. Yu, and Wladek Walukiewicz,
  
• Development of ZnTe-based solar cells;　2013/03
  ANNOUNCEMENT INFO.;　Materials Science Forum, 750, 80-83, 2013.
  AUTHOR;　Tooru Tanaka, Masaki Miyabara, Katsuhiko Saito, Qixin Guo, Mitsuhiro Nishio, Kin M. Yu, and Wladek Walukiewicz
  
• Photocurrent induced by two-photon excitation in ZnTeO intermediate band solar cells;　2013/03
  ANNOUNCEMENT INFO.;　Applied Physics Letters, 102, 052111, 2013.
  AUTHOR;　Tooru Tanaka, Masaki Miyabara , Yasuhiro Nagao , K Saito , Qixin Guo , Mitsuhiro Nishio , Kin Man Yu , Wladek Walukiewicz
  
• Band alignment of ZnTe/GaAs heterointerface investigated by synchrotron radiation photoemission spectroscopy;　2013/03
  ANNOUNCEMENT INFO.;　Applied Physics Letters, 102, 092107, 2013.
  AUTHOR;　Qixin Guo*, Kazutoshi Takahashi, Katsuhiko Saito, Hajime Akiyama, Tooru Tanaka, and Mitsuhiro Nishio
  
• Photo-electrochemical Properties of Titanium Dioxide Thin Films Prepared by Reactive RF Sputtering Method;　2013/02
  ANNOUNCEMENT INFO.;　Materials Science Forum Vol. 750 (2013) pp 248-251.
  AUTHOR;　Makoto Arita, Yu Tabata, Hiroki Sakamoto, and Qixin Guo
  
• Raman-scattering probe of anharmonic effects due to temperature and composition in InGaN;　2013/02
  ANNOUNCEMENT INFO.;　Phys. Status Solidi B 250, No. 2, 329–333 (2013) / DOI 10.1002/pssb.201248374
  AUTHOR;　 J. F. Kong, W. Z. Shen, and Q. X. Guo
  
• Impact of Radio Frequency Powers on GaInN Film Growth by Magnetron Reactive Sputtering;　2012/11
  ANNOUNCEMENT INFO.;　Japanese Journal of Applied Physics, 51 (2012) 118004.
  AUTHOR;　Qixin GUO, Wangzhou SHI, Feng LIU,Tomoya NAKAO, Katsuhiko SAITO, Tooru TANAKA, and Mitsuhiro NISHIO
  
• Phase transformation and nanograin refinement of silicon by processing through high-pressure torsion;　2012/10
  ANNOUNCEMENT INFO.;　Applied Physics Letters, 101 (2012) 121908.
  AUTHOR;　Yoshifumi Ikoma, Kazunori Hayano , Kaveh Edalati , K Saito , Qixin Guo , Zenji Horita
  
• Effects of substrate temperature upon optical properties of ZnTe epilayers grown on (100) GaAs substrates by MOVPE;　2012/08
  ANNOUNCEMENT INFO.;　physica status solidi (a), 209 (2012) pp. 2041-2044.
  AUTHOR;　Shulai Huang, Ziwu Ji, Mingwen Zhao, Lei Zhang, Hongyu Guo, Baoli Liu, Xiangang Xu, and Qixin Guo
  
• Characterization of epitaxial ZnTe layers grown on GaAs substrates by transmission electron microscopy and photoluminescence;　2012/05
  ANNOUNCEMENT INFO.;　Journal of Vacuum Science and Technology A, 30, 021508 (2012).
  AUTHOR;　Fabi Zhang, Yoshifumi Ikoma, Jinping Zhang, Ke Xu, Katsuhiko Saito, and Qixin Guo*
  
• Existence and removal of Cu2Se second phase in coevaporated Cu2ZnSnSe4 thin films;　2012/04
  ANNOUNCEMENT INFO.;　Journal of Applied Physics, 111, 053522 (2012).
  AUTHOR;　Tooru Tanaka, Tatsuya Sueishi, Katsuhiko Saito, Qixin Guo, Mitsuhiro Nishio, Kin M. Yu, Wladek Walukiewicz
  
• Bacteria-directed construction of hollow TiO2 micro/nanostructures with enhanced photocatalytic hydrogen evolution activity;　2012/03
  ANNOUNCEMENT INFO.;　Optics Express, 20, A340-A350, 2012.
  AUTHOR;　Han Zhou, Tongxiang Fan, Jian Ding, Di Zhang, and Qixin Guo
  
• Growth of ZnTe layers on (111) GaAs substrates by metalorganic vapor phase epitaxy;　2012/02
  ANNOUNCEMENT INFO.;　Journal of Crystal Growth, 341 (2012) 7–11.
  AUTHOR;　Qixin Guo, Hajime Akiyama, Yuta Mikuriya, Katsuhiko Saito, Tooru Tanaka, and Mitsuhiro Nishio
  
• Effects of substrate temperature upon the properties of ZnMgTe layer grown by MOVPE;　2012/01
  ANNOUNCEMENT INFO.;　Applied Surface Science, 258 (2012) 2137-2140.
  AUTHOR;　K. Saito, Y. Inoue, Y. Hayashida, T. Tanaka, Q.X. Guo and M. Nishio
  
• Epitaxial growth of ZnO layers on (111) GaAs substrates by laser molecular beam epitaxy;　2012/01
  ANNOUNCEMENT INFO.;　Thin Solid Films 520 (2012) 2663–2666.
  AUTHOR;　Jian Ding; Di Zhang; Takaharu Konomi; Katsuhiko Saito; Qixin Guo*
  
• Molecular beam epitaxial growth and optical properties of highly mismatched ZnTe1-xOx alloys;　2012/01
  ANNOUNCEMENT INFO.;　Applied Physics Letters 100 (2012)011905 (3pages).
  AUTHOR;　 T. Tanaka, S. Kusaba, T. Mochinaga, K. Saito, Q. Guo, M. Nishio, K. M. Yu, and W. Walukiewicz
  
• Raman Band Redshifting of α-Cu2(OH)3Cl with Decreasing the Temperature;　2012/01
  ANNOUNCEMENT INFO.;　Advanced Materials Research Vols. 430-432 (2012) pp 391-394
  AUTHOR;　Xiaodong Liu, Xingliang Xu, Dongdong Meng, Masayoshi Fujihala, Xuguang Zheng, Zhengwei Chen, and Qixin Guo
  
• Local Laser Heating Effect on Raman Spectroscopy of β-Co2(OH)3Br;　2012/01
  ANNOUNCEMENT INFO.;　Advanced Materials Research Vols. 430-432 (2012) pp 566-569.
  AUTHOR;　Xiaodong Liu, Jing Lu, Masayoshi Fujihala, Dongdong Meng, Xingliang Xu, Xuguang Zheng, Zhengwei Chen, and Qixin Guo
  
• Raman Spectral Properties of β-Co2(OH)3Cl down to the Liquid Nitrogen Temperature;　2012/01
  ANNOUNCEMENT INFO.;　Advanced Materials Research Vols. 430-432 (2012) pp 1257-1260.
  AUTHOR;　Jing Lu, Xiaodong Liu, Xingliang Xu, Masayoshi Fujihala, Dongdong Meng, Xuguang Zheng, Zhengwei Chen, and Qixin Guo
  
• Spectral properties of Botallackite-structure Alpha-Cu2(OH/D)3Br at room temperature.;　2012/01
  ANNOUNCEMENT INFO.;　Adv. Mater. Res., 391-392, 1493-1497 (2012).
  AUTHOR;　X. D. Liu, D. D. Meng, X. G. Zheng, and Q. X. Guo.
  
• Art of blackness in butterfly wings as natural solar collector;　2011/12
  ANNOUNCEMENT INFO.;　Soft Matter, 2011, 7, 11433-11439.
  AUTHOR;　Qibin Zhao, Xingmei Guo, Tongxiang Fan, Jian Ding, Di Zhang and Qixin Guo
  
• Growth and characterization of Fe3O4 films;　2011/12
  ANNOUNCEMENT INFO.;　Materials Research Bulletin 46 (2011) 2212–2216.
  AUTHOR;　Jian Ding, Di Zhang, Makoto Arita, Yoshifumi Ikoma, Kazuki Nakamura, Katsuhiko Saito, Qixin Guo*
  
• A new method to prepare high-surface-area N–TiO2/activated carbon;　2011/11
  ANNOUNCEMENT INFO.;　Materials Letters 65 (2011) 326–328.
  AUTHOR;　D. Huang, Y. Miyamoto, J. Ding, J. Gu, S. Zhu, Q. Liu, T. Fan, Q. Guo, D. Zhang
  
• Preparation and characterization of high-surface-area TiO2/activated carbon by low-temperature impregnation;　2011/11
  ANNOUNCEMENT INFO.;　Separation and Purification Technology 78 (2011) 9–15.
  AUTHOR;　D. Huang, Y. Miyamoto, T. Matsumoto, T. Tojo, T. Fan, J. Ding, Q. Guo, D. Zhang
  
• Mid-infrared and Raman spectral analysis of geometrically frustrated natural atacamite;　2011/09
  ANNOUNCEMENT INFO.;　Guang Pu Xue Yu Guang Pu Fen Xi/Spectroscopy and Spectral Analysis, 31 (2011) 2431-2436.
  AUTHOR;　Tao, W.-J., Liu, X.-D., Zheng, X.-G., Meng, D.-D., Guo, Q.-X.
  
• Preparation of high-surface-area activated carbon from Zizania latifolia leaves by one-step activation with K2CO3/rarefied air;　2011/08
  ANNOUNCEMENT INFO.;　Journal of Materials Sicence 46,5064–5070,(2011). DOI 10.1007/s10853-011-5429-4
  AUTHOR;　D. C. Huang, Q. L. Liu, W. Zhang, J. Ding, J. J. Gu, S. M. Zhu, Q. X. Guo, D. Zhang
  
• Raman and Mid-IR Spectral Analysis of the Atacamite-Structure Hydroxyl/Deuteroxyl Nickel Chlorides Ni2(OH/D)3Cl;　2011/08
  ANNOUNCEMENT INFO.;　CHIN. PHYS. LETT. Vol. 28, 087805-1-4, (2011)
  AUTHOR;　LIU Xiao-Dong, Hagihala Masato, ZHENG Xu-Guang, MENG Dong-Dong, GUO Qi-Xin
  
• Temperature Dependence of Raman Scattering in AlInN;　2011/07
  ANNOUNCEMENT INFO.;　Journal of Applied Physics, 109, 113514 (2011).
  AUTHOR;　L. F. Jiang, J. F. Kong, W. Z. Shen, and Q. X. Guo
  
• Raman and mid-IR spectroscopic study of geometrically frustrated hydroxyl cobalt halides at room temperature.;　2011/07
  ANNOUNCEMENT INFO.;　Chin. Phys. B 20(7), 077801 (2011).
  AUTHOR;　X. D. Liu, D. D. Meng, M Hagihala, X. G. Zheng, and Q. X. Guo.
  
• Optical properties of AlInN thin films (in Chinese);　2011/06
  ANNOUNCEMENT INFO.;　J. Infrared Millim. Waves, 30, 207-211, 2011
  AUTHOR;　L. F. Jiang, W. Z. Shen, and Q. X. Guo
  
• Electronic structure of GaInN semiconductors investigated by x-ray absorption spectroscopy;　2011/05
  ANNOUNCEMENT INFO.;　APPLIED PHYSICS LETTERS 98, 181901-1-3, (2011)
  AUTHOR;　Q. X. Guo,H. Senda, K. Saito, T. Tanaka, M. Nishio, J. Ding, T. X. Fan, D. Zhang, X. Q. Wang, S. T. Liu, B. Shen, and R. Ohtani
  
• Preparation of Al2O3-ZrO2 Composite Ceramic Coating by a New Sol-gel Method and It’s Structure;　2011/04
  ANNOUNCEMENT INFO.;　Surface Technology, 40, 1-3 (2011) (in Chinese).
  AUTHOR;　ZHANG Fa-bi, LI Ming-wei, QIN Zu-jun, GUO Qi-xin
  
• Effect of gas flow rate on surface morphology and crystal quality of ZnTe epilayers grown on GaAs substrates;　2011/03
  ANNOUNCEMENT INFO.;　Materials Research Bulletin, 46, 551–554, 2011.
  AUTHOR;　Qixin Guo, Masaki Nada, Yaliu Ding, Katsuhiko Saito, Tooru Tanaka, and Mitsuhiro Nishio
  
• Mid-infrared spectroscopic properties of geometrically frustrated basic cobalt chlorides;　2011/03
  ANNOUNCEMENT INFO.;　Acta Phys. Sin. 60, 037803, 2011 (in Chinese)
  AUTHOR;　Liu Xiao-Dong, Tao Wan-Jun, Zheng Xu-Guang, Hagihala Masato, Meng Dong-Dong, Zhang Sen-Lin, and Guo Qi-Xin
  
• Trimeric Hydrogen Bond in Geometrically Frustrated Hydroxyl Cobalt Halogenides;　2011/01
  ANNOUNCEMENT INFO.;　Chinese Physics Letters 28 (1): 017803, 2011
  AUTHOR;　LIU Xiao-Dong, Hagihala Masato, ZHENG Xu-Guang, TAO Wan-Jun, MENG Dong-Dong, ZHANG Sen-Lin, GUO Qi-Xin
  
• Mid-IR and Raman Spectral Properties of Geometrically Frustrated Atacamite Hydroxyl Copper Chloride;　2011
  ANNOUNCEMENT INFO.;　Advanced Materials Research Vols. 146-147, 972-975, 2011
  AUTHOR;　Wanjun Tao, Xiaodong Liu, Xuguang Zheng, Dongdong Meng, and Qixin Guo
  
• Mid-IR and Raman Spectral Properties of Hydroxyl/Deuteroxyl Cobalt Chlorides;　2011
  ANNOUNCEMENT INFO.;　Advanced Materials Research Vols. 146-147, 1194-1197, 2011
  AUTHOR;　Xiaodong Liu, Dongdong Meng, Xuguang Zheng, Masato Hagihala and Qixin Guo
  
• Mid-IR and Raman Spectral Properties of Clinoatacamite-structure Basic Copper Chlorides;　2011
  ANNOUNCEMENT INFO.;　Advanced Materials Research Vols. 146-147, 1202-1205, 2011.
  AUTHOR;　Xiaodong Liu, Dongdong Meng, Xuguang Zheng, Masato Hagihala and Qixin Guo
  
• Super Black and Ultrathin Amorphous Carbon Film Inspired by Anti-reflection Architecture in Butterfly Wing;　2011
  ANNOUNCEMENT INFO.;　Carbon,49, 877-883, 2011.
  AUTHOR;　Qibin Zhao, Tongxiang Fan, Jian Ding, Di Zhang, Qixin Guo, Masao Kamada
  
• Effect of VI/II ratio upon photoluminescence and electrical properties of phosphorus-doped ZnTe films grown by metalorganic vapor phase epitaxy;　2011
  ANNOUNCEMENT INFO.;　Thin Solid Films 520 (2011)743-746.
  AUTHOR;　M. Nishio, K. Kaia, K. Saito, T. Tanaka, Q.Guo
  
• Vibrational spectroscopic properties of botallackite-structure basic copper halides;　2011
  ANNOUNCEMENT INFO.;　Vibrational Spectroscopy 56 (2011) 177-183.
  AUTHOR;　Xiao-Dong Liu, Masato Hagihala, Xu-Guang Zheng, and Qi-Xin Guo
  
• Structural and optical properties of porous iron oxide;　2011
  ANNOUNCEMENT INFO.;　Solid State Communications 151 (2011) 802-805.
  AUTHOR;　Jian Ding, Tongxiang Fan, Di Zhang, Katsuhiko Saito, and Qixin Guo*
  
• Temperature dependence of electrical properties for P-doped ZnMgTe bulk crystals of high quality grown by Bridgman method Original Research Article;　2010/12
  ANNOUNCEMENT INFO.;　Journal of Crystal Growth 318 (2011) 524-527.
  AUTHOR;　Mitsuhiro Nishio, Kyosuke Hiwatashi, Katsuhiko Saito, Tooru Tanaka, Qixin Guo
  
• Bio-Inspired Functional Materials Templated From Nature Materials (Review Paper);　2010/12
  ANNOUNCEMENT INFO.;　KONA Powder and Particle Journal No.28, 116-130, (2010)
  AUTHOR;　Di Zhang, Wang Zhang, Jiajun Gu, Shenming Zhu, Huilan Su, Qinglei, Liu, Tongxiang Fan, Jian Ding and Qixin Guo
  
• Synchrotron radiation XAFS investigation on wood structure hierarchical porous ZnO;　2010/09
  ANNOUNCEMENT INFO.;　Journal of Functional Materials (in press), 2010.
  AUTHOR;　ZHU Peng-bo, DING Jian, GUO Cui-Ping, FAN Xue-lu, LIU Zhao-ting, FAN Tong-Xiang, ZHANG Di, GUO Qi-Xin, and KAMADA Masao
  
• Properties of InGaN Films Grown by Reactive Sputtering;　2010/08
  ANNOUNCEMENT INFO.;　Japanese Journal of Applied Physics, 49, 081203-1-4, 2010.
  AUTHOR;　Qixin GUO, Yuta KUSUNOKI, Yaliu DING, Tooru TANAKA, and Mitsuhiro NISHIO
  
• Low-temperature buffer layer effects on the quality of ZnTe epilayers grown on sapphire substrates;　2010/07
  ANNOUNCEMENT INFO.;　Journal of Applied Physics, 107, 123525-1-5, 2010
  AUTHOR;　Qixin Guo, Masaki Nada, Yaliu Ding, Tooru Tanaka, and Mitsuhiro Nishio,
  
• Temperature dependence of photoluminescence from P-doped ZnMgTe bulk crystals of high quality grown by Bridgman method;　2010/06
  ANNOUNCEMENT INFO.;　Physica Status Solidi (c), 7, 1495-1497 (2010).
  AUTHOR;　K. Saito, S. Shimao, T. Tanaka, Q.X. Guo, and M. Nishio
  
• Photoelectron spectroscopic study on electronic structure of butterfly-templated ZnO;　2010/06
  ANNOUNCEMENT INFO.;　Physica Status Solidi (c), 7, 1574-1576 (2010).
  AUTHOR;　Masao Kamada, Harue Sugiyama, Kazutoshi Takahashi, Qixin Guo, Jiajun Gu, Wang Zhang, Tongxiang Fan, and Di Zhang
  
• Artificial inorganic leaf for efficient photochemica hydrogen production inspired by natural photosynthesis;　2010/01
  ANNOUNCEMENT INFO.;　Advanced Materials, 22, 951-956, 2010.
  AUTHOR;　Han Zhou, Xufan Li, Tongxiang Fan, Frank E. Osterloh, Jian Ding, Erwin M. Sabio, Di Zhang, Qixin Guo
  
• Influence of composition ratio on properties of Cu2ZnSnS4 thin films fabricated by co-evaporation;　2010
  ANNOUNCEMENT INFO.;　Thin Solid Films, 518, S29-S33, 2010
  AUTHOR;　Tooru Tanaka, Akihiro Yoshida, Daisuke Saiki, Katsuhiko Saito, Qixin Guo, Mitsuhiro Nishio and Toshiyuki Yamaguchi
  
• Enhanced Light Output from ZnTe Light Emitting Diodes by Utilizing Thin Film Structure;　2009/12
  ANNOUNCEMENT INFO.;　Appl. Phys. Express 2 (2009) 122101 (3 pages)
  AUTHOR;　Tooru Tanaka, Katsuhiko Saito, Mitsuhiro Nishio, Qixin Guo, and Hiroshi Ogawa
  
• Improvement in the Quality of ZnTe Epilayers Grown on GaAs Substrates by Introducing a Low-temperature Buffer Layer;　2009/08
  ANNOUNCEMENT INFO.;　Japanese Journal of Applied Physics, 48, 080208 (3pp), 2009.
  AUTHOR;　Qixin Guo, Yusuke Sueyasu, Tooru Tanaka, Mitsuhiro Nishio, and J.C. Cao
  
• Temperature Dependence of the Optical Properties of AlInN;　2009/07
  ANNOUNCEMENT INFO.;　Journal of Applied Physics, 106, 013515 (8pp), 2009
  AUTHOR;　L. F. Jiang, W. Z. Shen, and Qixin Guo
  
• Heteroepitaxial growth of InN layers on (111) silicon substrates;　2009/05
  ANNOUNCEMENT INFO.;　Journal of Crystal Growth 311, 2783–2786, 2009.
  AUTHOR;　Qixin Guo, Masahiko Ogata, Yaliu Ding, Tooru Tanaka, and Mitsuhiro Nishio
  
• Bacteria-based controlled assembly of metal chalcogenide hollow nanostructures with enhanced light-harvesting and photocatalytic properties;　2009/04
  ANNOUNCEMENT INFO.;　Nanotechnology 20 085603 (10pp), 2009 doi:10.1088/0957-4484/20/8/085603
  AUTHOR;　Han Zhou, Tongxiang Fan, Ting Han, Xufan Li, Jian Ding, Di Zhang, Qixin Guo, and Hiroshi Ogawa
  
• Iridescent large-area ZrO2 photonic crystals using butterfly as templates;　2009/02
  ANNOUNCEMENT INFO.;　Applied Physics Letters, 94, 053901 (3pp), (2009)
  AUTHOR;　Yu Chen, Jiajun Gu, Shenming Zhu, Tongxiang Fan, Di Zhang, Qixin Guo
  
• Novel Photoanode Structure Templated from Butterfly Wing Scales;　2009/02
  ANNOUNCEMENT INFO.;　Chem. Mater., 2009, 21 (1), 33-40
  AUTHOR;　Wang Zhang, Di Zhang, Tongxiang Fan, Jiajun Gu, Jian Ding, Hao Wang, Qixin Guo, and Hiroshi Ogawa
  
• Enhanced Ligh-Harvesting and Photocatalytic Properties in Morph-TiO2 from Green-Leaf Biotemplates;　2009/01
  ANNOUNCEMENT INFO.;　Advanced Functional Materials, 19, 45-56 (2009).
  AUTHOR;　Xufan Li, Tongxiang Fan, Han Zhou, Suk-Kwun Chow, Wang Zhang, Di Zhang, Qixin Guo and Hiroshi Ogawa
  
• Effect of Temperature on Raman Scattering in Hexagonal ZnMgO for Optoelectronic Applications;　2009/01
  ANNOUNCEMENT INFO.;　Solid State Commnuications 149, 10-13 (2009).
  AUTHOR;　J. F. Kong, W. Z. Shen, Y. W. Zhang , X. M. Li, and Q. X. Guo
  
• Scattering times in the two-dimensional electron gas of AlxGa1−xN/AlN/GaN
  heterostructures;　2009/01
  ANNOUNCEMENT INFO.;　Journal of Physics D: Applied Physcis 42 (2009) 045112 (5pp).
  AUTHOR;　Xiuxun Han, Yoshio Honda, Tetsuo Narita, Masahito Yamaguchi, Nobuhiko Sawaki, Tooru Tanaka, Qixin Guo and Mitsushiro Nishio
  
• Biosynthesis of cathodoluminescent zinc oxide replicas using butterfly (Papilio paris) wing scales as templates;　2009
  ANNOUNCEMENT INFO.;　Materials Science and Engineering C, 29, 92-96, (2009).
  AUTHOR;　Zhang, W., Zhang, D., Fan, T., Ding, J., Gu, J., Guo, Q., Ogawa, H.
  
• Surface morphology and optical properties of ZnTe epilayers on GaAs substrates by metalorganic vapor phase epitaxy;　2009
  ANNOUNCEMENT INFO.;　Journal of Crystal Growth, 311 (2009), pp. 970-973
  AUTHOR;　Qixin Guo, Yusuke Sueyasu, Yaliu Ding, Tooru Tanaka, and Mitsuhiro Nishio
  
• ZnTe based light emitting diodes fabricated by solid-state diffusion of Al through an Al oxide layer;　2009
  ANNOUNCEMENT INFO.;　Japanese Journal of Applied Physics, 48, 022203-1-5, 2009.
  AUTHOR;　Tooru Tanaka, Mitsuhiro Nishio, Qixin Guo, and Hiroshi Ogawa
  
• Biomimetic photocatalyst system derived from the natural prototype in leaves for efficient visible-light-driven catalysis;　2009
  ANNOUNCEMENT INFO.;　Journal of Materials Chemistry, 19, 2695-2703, 2009
  AUTHOR;　HAN ZHOU, TONGXIANG FAN, XUFAN LI, DI ZHANG, QIXIN GUO, AND HIROSHI OGAWA
  
• Fabrication of ZnTe Light Emitting Diode by Al Thermal Diffusion through Surface Oxidation Layer;　2008/11
  ANNOUNCEMENT INFO.;　Japanese Journal of Applied Physics 47, 8408-8410, (2008).
  AUTHOR;　Tooru Tanaka, Mitsuhiro Nishio, Qixin Guo, and Hiroshi Ogawa
  
• Giant Seebeck coefficient decrease in polycrystalline materials with highly anisotropic band structures: Implications in seeking high-quality thermoelectric materials;　2008/09
  ANNOUNCEMENT INFO.;　Solid State Communications, 148, 10-13, 2008.
  AUTHOR;　J.-J. Gu, D. Zhang, and Q.X. Guo
  
• Structural and Optical Properties of AlInN Films Grown on Sapphire Substrates;　2008/01
  ANNOUNCEMENT INFO.;　Japanese Journal of Applied Physics, 47, 612-615 (2008).
  AUTHOR;　Qixin GUO, Tooru TANAKA, Mitsuhiro NISHIO, and Hiroshi OGAWA
  
• In situ synthesis and photoluminescence of QD-CdS on silk fibroin fibers at room temperature;　2008
  ANNOUNCEMENT INFO.;　Nanotechnology, 19, 025601 (6pp), (2008).
  AUTHOR;　Huilan Su, Jie Han, Qun Dong, Di Zhang, Qixin Guo
  
• Biogenic synthesis and photocatalysis of Pd-PdO nanoclusters reinforced hierarchical TiO2 films with interwoven and tubular conformations;　2008
  ANNOUNCEMENT INFO.;　Biomacromolecules, 9, 499-504 (2008).
  AUTHOR;　Huilan Su, Qun Dong, Jie Han, Di Zhang, Qixin Guo
  
• Microfabrication of ZnO on PTFE Template Patterned by Synchrotron Radiation;　2008
  ANNOUNCEMENT INFO.;　Journal of Korean Physical Society 53, 2796-2799 (2008).
  AUTHOR;　Q.X. GUO, Y. MITSUISHI, T. TANAKA, M. NISHIO, H. OGAWA, and Y.Z. HUANG
  
• Electron-LO-phonon interaction in wurtzite GaN quantum wells
  under a magnetic field;　2008
  ANNOUNCEMENT INFO.;　Physica B 403, 2567–2571 (2008).
  AUTHOR;　J. C. Cao, J. T. Lu, and Qixin Guo
  
• Biogenic synthesis of hierarchical hybrid nanocomposites and patterning of silver nanoparticles;　2008
  ANNOUNCEMENT INFO.;　Materials Chemistry and Physics 110 (2008) 160–165
  AUTHOR;　Qun Dong, Huilan Su, Wei Cao, Jie Hana, Di Zhang, Qixin Guo
  
• Improvement of MOVPE grown ZnTe:P layers by annealing treatment;　2008
  ANNOUNCEMENT INFO.;　Journal of Physics: Conference Series 100, 042019 (2008).
  AUTHOR;　K. Saito, K. Fujimoto, K. Yamaguchi, T. Tanaka, M. Nishio, Q. X. Guo, and H. Ogawa
  
• Epitaxial growth of ZnMgTe with a wide composition range on ZnTe substrate by molecular beam epitaxy;　2008
  ANNOUNCEMENT INFO.;　Journal of Physics: Conference Series 100, 042018 (2008).
  AUTHOR;　Tooru Tanaka, Katsuhiko Saito, Mitsuhiro Nishio, Qixin Guo, Hiroshi Ogawa,
  
• Growth of undoped ZnMgTe layers by metalorganic vapour phase epitaxy;　2008
  ANNOUNCEMENT INFO.;　Journal of Physics: Conference Series 100, 042028 (2008).
  AUTHOR;　K. Saito, D. Kouno, T. Tanaka, M. Nishio, Q. X. Guo, and H. Ogawa
  
• Fabrication of a ZnTe light emitting diode by Al thermal diffusion into a p-ZnTe epitaxial layer on a p-ZnMgTe substrate;　2008
  ANNOUNCEMENT INFO.;　Journal of Materials Science: Materials in Electronics, 20, 505-509, 2008.
  AUTHOR;　Tooru Tanaka , Katsuhiko Saito, Mitsuhiro Nishio, Qixin Guo and Hiroshi Ogawa
  
• Post-annealing effect upon electrical and optical properties of MOVPE grown P-doped ZnTe homoepitaxial layers;　2008
  ANNOUNCEMENT INFO.;　Journal of Materials Science: Materials in Electronics, 20, 264-267, 2008.
  AUTHOR;　Katsuhiko Saito, Kouji Yamaguchi, Tooru Tanaka, Mitsuhiro Nishio, Qixin Guo and Hiroshi Ogawa,
  
• Fabrication of hierarchical ZnO films with interwoven porous conformations by a bioinspired templating technique;　2008
  ANNOUNCEMENT INFO.;　Chemical Engineering Journal, 137, 428-435 (2008).
  AUTHOR;　Qun Dong, Huilan Su, Chunfu Zhang, Di Zhang, Qixin Guo
  
• Synthesis of biomorphic Al2O3 based on natural plant templates and assembly of Ag nanoparticles controlled within the nanopores;　2008
  ANNOUNCEMENT INFO.;　Microporous and Mesoporous Materials, 108, 204-212 (2008)
  AUTHOR;　Tongxiang Fan, Xufan Li, Jian Ding, Di Zhang and Qixin Guo
  
• Synthesis and cathodoluminescence properties of porous wood (fir)-templated zinc oxide;　2008
  ANNOUNCEMENT INFO.;　Ceramics International, 34, 69-74 (2008).
  AUTHOR;　Zhaoting Liu, Tongxiang Fan, Jian Ding, Di Zhang, Qixin Guo and Hiroshi Ogawa
  
• Structural properties of ZnTe epilayers grown on (0001) α-Al2O3 substrates by metalorganic vapor phase epitaxy;　2007/11
  ANNOUNCEMENT INFO.;　Japanese Journal of Applied Physics. 46, 7221-7224 (2007).
  AUTHOR;　Qixin GUO, Yusuke KUME, Jiajun GU, Di ZHANG, Tooru TANAKA, Mitsuhiro NISHIO, and Hiroshi OGAWA
  
• Determination of the Third- and Fifth-Order Nonlinear Refractive Index in InN Thin Films;　2007/11
  ANNOUNCEMENT INFO.;　Applied Physics Letters, 91, 221902 -1-3 (2007).
  AUTHOR;　Z. Q. Zhang, W. Q. He, C. M. Gu, W. Z. Shen, H. Ogawa and Q. X. Guo
  
• Growth Properties of Polytetrafluoroethylene Films by Synchrotron Radiation Ablation;　2007/10
  ANNOUNCEMENT INFO.;　JapaJapanese Journal of Applied Physics, 46, 6782-6785 (2007).
  AUTHOR;　Qixin GUO, Takashi KUGINO, Yusuke KUME, Yoshiaki MITSUISHI, Tooru TANAKA, Mitsuhiro NISHIO, and Hiroshi OGAWA
  
• Reactive sputter deposition of AlInN thin films;　2007/03
  ANNOUNCEMENT INFO.;　Journal of Crystal Growth, 300, 151-154 (2007).
  AUTHOR;　Q.X. Guo, Y. Okazaki, Y. Kume, T. Tanaka, M. Nishio, and H. Ogawa
  
• Structural and optical properties of ZnMgO films grown by metal organic decomposition;　2007/02
  ANNOUNCEMENT INFO.;　Japanese Journal of Applied Physics, 46, 560-562 (2007).
  AUTHOR;　Qixin GUO, Tooru TANAKA, Mitsuhiro NISHIO, Hiroshi OGAWA
  
• Observation of ultra-broadband terahertz emission from ZnTe films grown by metaloganic vapor epitaxy;　2007/01
  ANNOUNCEMENT INFO.;　Solid State Communications, 141, 188-191 (2007).
  AUTHOR;　Qixin Guo, Yusuke Kume, Yuji Fukuhara, Tooru Tanaka, Mitsuhiro Nishio, Hiroshi Ogawa, Masahiro Hiratsuka, Masahiko Tani, and Masanori Hangyo
  
• Design of Beamline BL9 at Saga Light Source,;　2007
  ANNOUNCEMENT INFO.;　AIP series of conference proceedings, Vol.879 (2007) p.559.
  AUTHOR;　Tooru Tanaka, Hiroshi Ogawa, Masao Kamada, Mitsuhiro Nishio, Masataka Masuda, Qixin Guo, Kazuki Hayashida, Yuzi Kondo, Teruaki Motooka, Daisuke Yoshimura, Hiroyuki Setoyama, and Toshihiro Okajima,
  
• Synthesis and characterizations of hierarchical biomorphic titania oxide by a bio-inspired bottom-up assembly solution technique;　2007
  ANNOUNCEMENT INFO.;　Journal of Solid State Chemistry, 180, 949-955 (2007).
  AUTHOR;　Qun Dong, Huilan Su, Wei Cao, Di Zhang, Qixin Guo, Yijian Lai
  
• Assembly of metallic nanoparticles with controllable size in nanopores of biomorphic oxide fibers templated by cotton tissue;　2007
  ANNOUNCEMENT INFO.;　Journal of Materials Research 22, 755-762 (2007).
  AUTHOR;　Xufan Li, Tongxiang Fan, Di Zhang, Qixin Guo, and Hiroshi Ogawa
  
• Assembly and formation of biomorphic tin dioxide via a biomimetic sol-gel approach involving glycoprotein;　2007
  ANNOUNCEMENT INFO.;　European Journal of Inorganic Chemistry, 2007, 2265-2273 (2007).
  AUTHOR;　Qun Dong, Huilan Su, Wei Cao, Di Zhang, Qixin Guo, and Fangying Zhang
  
• Study of Al thermal diffusion in ZnTe by secondary ion mass spectroscopy,;　2007
  ANNOUNCEMENT INFO.;　physica status solidi (b), 244, 1685-1690 (2007).
  AUTHOR;　Tooru Tanaka, Norihiro Murata, Katsuhiko Saito, Qixin Guo, Mitsuhiro Nishio, and Hiroshi Ogawa,
  
• Synthesis of ZnFe2O4/ SiO2 Composites Derived from Diatomite Template;　2007
  ANNOUNCEMENT INFO.;　Bioinspiration & Biomimetics, 2, 30-35(2007).
  AUTHOR;　Zhaoting Liu, Tongxiang Fan, Han Zhou, Di Zhang, Xiaolu Gong, Qixin Guo and Hiroshi Ogawa
  
• Preparation of Porous Fe from Biomorphic Fe2O3 Precursors with Wood Templates;　2007
  ANNOUNCEMENT INFO.;　Materials Transactions, 48, 878-881 (2007).
  AUTHOR;　Zhaoting Liu, Tongxiang Fan, Jiajun Gu, Di Zhang, Qixin Guo, Jiaqiang Xu
  
• Growth characteristics of ZnMgTe layer on ZnTe substrate by metalorganic vapor phase epitaxy;　2007
  ANNOUNCEMENT INFO.;　Journal of Crystal Growth, 298, 449-452 (2007).
  AUTHOR;　Katsuhiko Saito, Tetsuo Yamashita, Daisuke Kouno, Tooru Tanaka, Mitsuhiro Nishio, Qixin Guo, and Hiroshi Ogawa
  
• Effects of dopant transport rate upon photoluminescence and electrical properties of ZnTe in atmospheric pressure MOVPE using tris-dimethlaminophosphorus;　2007
  ANNOUNCEMENT INFO.;　Journal of Crystal Growth, 298, 437-440 (2007)
  AUTHOR;　Tooru Tanaka, Mitsuhiro Nishio, Kazuki Hayashida, Kenji Fujimoto, Qixin Guo, and Hiroshi Ogawa
  
• Low-pressure metalorganic vapor phase epitaxy growth of ZnTe;　2007
  ANNOUNCEMENT INFO.;　Journal of Crystal Growth, 298, 441-444 (2007).
  AUTHOR;　Yusuke Kume, Qixin Guo, Tooru Tanaka, Mitsuhiro Nishio, Hiroshi Ogawa, and Wenzhong Shen
  
• Growth and Characterization of ZnTe epilayers on (100)GaAs substrates by metalorganic vapor phase epitaxy;　2007
  ANNOUNCEMENT INFO.;　Journal of Crystal Growth, 298, 445-448 (2007)
  AUTHOR;　Yusuke Kume, Qixin Guo, Yuji Fukuhara, Tooru Tanaka, Mitsuhiro Nishio, and Hiroshi Ogawa
  
• Electronic band structures and transport properties of wurtzite indium nitride grown by metal-organic vapor phase epitaxy;　2007
  ANNOUNCEMENT INFO.;　Journal of Crystal Growth, 298, 394-398 (2007).
  AUTHOR;　W.Z. Shen, Z.W. Jia, J. Chen, H.B. Ye, H. Ogawa and Q.X. Guo
  
• Fabrication of Cu2ZnSnS4 thin films by co-evaporation;　2006
  ANNOUNCEMENT INFO.;　PHYSICA STATUS SOLIDI C CONFERENCES, 3, 8, 2844-2847
  AUTHOR;　Tanaka, T / Kawasaki, D / Nishio, M / Guo, Q. X / Ogawa, H
  
• Optical and electrical properties of phosphorus-doped ZnMgTe bulk crystals grown by Bridgman method;　2006
  ANNOUNCEMENT INFO.;　PHYSICA STATUS SOLIDI C CONFERENCES, 3, 8, 2673-2676
  AUTHOR;　Saito, K / So, G / Tanaka, T / Nishio, M / Guo, Q. X / Ogawa, H
  
• Critical point transitions of wurtzite indium nitride;　2006
  ANNOUNCEMENT INFO.;　SOLID STATE COMMUNICATIONS, 137, 1/2, 49-52
  AUTHOR;　Shen, W. Z / Pu, X. D / Chen, J / Ogawa, H / Guo, Q. X
  
• Synthesis and hierarchical pore structure of biomorphic manganese oxide derived from woods;　2006
  ANNOUNCEMENT INFO.;　JOURNAL- EUROPEAN CERAMIC SOCIETY, 26, 16, 3657-3664
  AUTHOR;　Li, X / Fan, T / Liu, Z / Ding, J / Guo, Q. X / Zhang, D
  
• Fabrication of ZnO microtubes with adjustable nanopores on the walls by the templating of butterfly wing scales;　2006
  ANNOUNCEMENT INFO.;　NANOTECHNOLOGY, 17, 3, 840-844
  AUTHOR;　Zhang, W / Zhang, D / Fan, T / Ding, J / Guo, Q. X / Ogawa, H
  
• Growth of boron-doped ZnTe homoepitaxial layer by metalorganic vapor phase epitaxy;　2006
  ANNOUNCEMENT INFO.;　PHYSICA STATUS SOLIDI C CONFERENCES, 3, 4, 833-836
  AUTHOR;　Saito, K / Yamashita, T / Tanaka, T / Nishio, M / Guo, Q. X / Ogawa, H
  
• Phosphorus-doped ZnMgTe bulk crystals grown by Vertical Bridgman Method;　2006
  ANNOUNCEMENT INFO.;　PHYSICA STATUS SOLIDI C CONFERENCES, 3, 4, 812-816
  AUTHOR;　Saito, K / Kinoshita, K / Tanaka, T / Nishio, M / Guo, Q. X / Ogawa, H
  
• Morphosynthesis of hierarchical ZnO replica using butterfly wing scales as templates;　2006
  ANNOUNCEMENT INFO.;　MICROPOROUS AND MESOPOROUS MATERIALS, 92, 1/3, 227-233
  AUTHOR;　Zhang, W / Zhang, D / Fan, T / Ding, J / Guo, Q. X / Ogawa, H
  
• Cathodoluminescence study of anodic nanochannel alumina;　2006
  ANNOUNCEMENT INFO.;　JOURNAL OF LUMINESCENCE, 119/120, 253-257
  AUTHOR;　Guo, Q. X / Hachiya, Y / Tanaka, T / Nishio, M / Ogawa, H
  
• Growth properties of AlN films on sapphire substrates by reactive sputtering;　2006
  ANNOUNCEMENT INFO.;　VACUUM, 80, 7, 716-718
  AUTHOR;　Guo, Q. X / Tanaka, T / Nishio, M / Ogawa, H
  
• Reactive Ion Etching of Zinc Oxide Using Methane and Hydrogen Gases;　2006
  ANNOUNCEMENT INFO.;　JAPANESE JOURNAL OF APPLIED PHYSICS PART 1 REGULAR PAPERS SHORT NOTES AND REVIEW PAPERS, 45, 11, 8597-8599
  AUTHOR;　Guo, Q. X / Uesugi, N / Tanaka, T / Nishio, M / Ogawa, H
  
• Microstructure and Infrared Absorption of Biomorphic Chromium Oxides Templated by Wood Tissues;　2006
  ANNOUNCEMENT INFO.;　Journal of the American Ceramic Society, 89, 3511-3515 (2006).
  AUTHOR;　Tongxiang Fan, Xufan Li, Zhaoting Liu, Jiajun Gu, Qixin Guo, Di Zhang
  
• Growth and Depth Dependence of Visible Luminescence in Wurtzite Indium Nitride Epilayers;　2006
  ANNOUNCEMENT INFO.;　Applied Physics Letters, 88,151904 (1-3) (2006)
  AUTHOR;　X. D. Pu, W. Z. Shen, Z. Q. Zhang H. Ogawa, and Q. X. Guo
  
• Effects of substrate temperature upon photoluminescence and electrical properties of ZnTe in atmospheric pressure MOVPE using tris-dimethlaminophosphorus;　2006
  ANNOUNCEMENT INFO.;　phys. stat. sol. (c) 3, 1172-1175 (2006).
  AUTHOR;　Kazuki Hayashida, Tooru1, Tanaka, Mitsuhiro Nishio, Qixin Guo, T.Tanigawa and Hiroshi Ogawa
  
• Effect of Surface Treatment on Properties of ZnTe LED Fabricated by Al Thermal Diffusion;　2006
  ANNOUNCEMENT INFO.;　phys. stat. sol. (b) 243, 959-962 (2006).
  AUTHOR;　T. Tanaka, Y. Hosi, T. Kuroiwa, K. Hayashida, K. Saito, M. Nishio, Q. Guo and H. Ogawa
  
• Electron Dephasing in Wurtzite Indium Nitride Thin Films;　2006
  ANNOUNCEMENT INFO.;　Applied Physics Letters, 89, 232107-1-3 (2006).
  AUTHOR;　Z. W. Jia, W. Z. Shen, H. Ogawa and Q. X. Guo
  
• Biomimetic zinc oxide replica with structural color using butterfly (Ideopsis similis) wings as templates;　2006
  ANNOUNCEMENT INFO.;　Bioinspiration & Biomimetics, 1, 89–95 (2006)
  AUTHOR;　Wang Zhang, Di Zhang, Tongxiang Fan, Jian Ding, Jiajun Gu, Qixin Guo, and Hiroshi Ogawa
  
• Microscopic investigations of aluminum nitride thin films grown by low-temperature reactive sputtering;　2005
  ANNOUNCEMENT INFO.;　THIN SOLID FILMS, 483, 1/2, 16-20
  AUTHOR;　Guo, Q. X / Yoshitugu, M / Tanaka, T / Nishio, M / Ogawa, H
  
• Fabrication of highly ordered nanocrystalline Si:H nanodots for the application of nanodevice arrays;　2005
  ANNOUNCEMENT INFO.;　JOURNAL OF CRYSTAL GROWTH, 283, 3/4, 339-345
  AUTHOR;　Ding, G. Q / Shen, W. Z / Zheng, M. J / Xu, W. L / He, Y. L / Guo, Q. X
  
• Synchrotron radiation-excited etching of ZnTe using Ar gas;　2005
  ANNOUNCEMENT INFO.;　NUCLEAR INSTRUMENTS AND METHODS IN PHYSICS RESEARCH SECTION B, 238, 1/4, 115-118
  AUTHOR;　Tanaka, T / Kume, Y / Hayashida, K / Saito, K / Nishio, M / Guo, Q. X / Ogawa, H
  
• Effects of dry etching processes on optical properties of ZnTe surface layers in ultraviolet region;　2005
  ANNOUNCEMENT INFO.;　APPLIED SURFACE SCIENCE, 249, 1/4, 216-221
  AUTHOR;　Wu, S / Ren, Z. Q / Shen, W. Z / Ogawa, H / Guo, Q. X
  
• Preparation of Cu2ZnSnS4 thin films by hybrid sputtering;　2005
  ANNOUNCEMENT INFO.;　JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 66, 11, 1978-1981
  AUTHOR;　Tanaka, T / Nagatomo, T / Kawasaki, D / Nishio, M / Guo, Q. X / Wakahara, A / Yoshida, A / Ogawa, H
  
• Strong Room-Temperature UV Luminescence from ZnO Grown by Metal Organic Decomposition (Brief Communication);　2005
  ANNOUNCEMENT INFO.;　JAPANESE JOURNAL OF APPLIED PHYSICS PART 1 REGULAR PAPERS SHORT NOTES AND REVIEW PAPERS, 44, 12, 8451-8452
  AUTHOR;　Guo, Q. X / Kume, Y / Tanaka, T / Nishio, M / Ogawa, H / Yoshida, A
  
• Optical properties of InN with stoichoimetry violation and indium clustering;　2005
  ANNOUNCEMENT INFO.;　Phys. Stat. Sol. (a), 202, 377-382 (2005).
  AUTHOR;　T. V. Shubina, S. V. Ivanov, V. N. Jmerik, M. M. Glazov, A. P. Kalvarskii, M. G. Tkachman, A. Vasson, J. Leymarie, A. Kavokin, H. Amano, I. Akasaki, K. S. A. Butcher, Q. Guo, B. Monemar, and P.S. Kop'ev
  
• Extended X-ray absorption fine structure of porous morph-genetic silicon carbide;　2005
  ANNOUNCEMENT INFO.;　Nuclear Instruments and Methods in Physics Research Section B 238, 138-140 (2005)
  AUTHOR;　J. Ding, B. Sun, T. Fan, D. Zhang, M. Kamada, H. Ogawa, and Q. X. Guo,
  
• Generation and Detection of Terahertz Radiation on Reactive Ion Etched ZnTe Surfaces;　2005
  ANNOUNCEMENT INFO.;　Acta Physica Sinica, 54, 4938-4943 (2005).
  AUTHOR;　L. He, C. Gu, W. Shen, J. Cao, H. Ogawa, and Q.X. Guo,
  
• X-ray absorption near-edge fine structure study of AlInN semiconductors.;　2005
  ANNOUNCEMENT INFO.;　Applied Physics letters. 86, 111911-(1-3) (2005)
  AUTHOR;　Q.X. Guo, J. Ding, T. Tanaka, M. Nishio, and H. Ogawa
  
• Temperature Dependence of Raman Scattering in Hexagonal Indium Nitride Films;　2005
  ANNOUNCEMENT INFO.;　Journal of Applied Physics, 98, 033527-1-6 (2005)
  AUTHOR;　X. D. Pu, W. Z. Shen, H. Ogawa, and Q. X. Guo
  
• Observation of visible luminescence from indium nitride at room temperature;　2005
  ANNOUNCEMENT INFO.;　Applied Physics Letters, 86, 231913-(1-3) (2005).
  AUTHOR;　Q. X. Guo , T. Tanaka, M. Nishio, H. Ogawa, X. D. Pu and W. Z. Shen
  
• Recovery from Dry Etching Damage in ZnTe by Thermal Annealing;　2005
  ANNOUNCEMENT INFO.;　Japanese Journal of Applied Physics, 44, L863-L865 (2005).
  AUTHOR;　Qixin GUO, Yusukei KUME, Tooru TANAKA, Mitsuhiro NISHIO and Hiroshi OGAWA
  
• Generation of Terahertz Radiation via Optical Rectification and Electro-optic Detection in ZnTe Crystal;　2004
  ANNOUNCEMENT INFO.;　Acta Physica Sinica, 53, 250-255 (2004)
  AUTHOR;　R. Liu, C. Gu, L. He, S. Wu, W. Shen, H. Ogawa, and Q. Guo
  
• Micro-Raman study of hexagonal InN thin films grown by reactive sputtering on GaAs;　2004
  ANNOUNCEMENT INFO.;　JOURNAL OF CRYSTAL GROWTH, 262, 1/4, 435-441
  AUTHOR;　Chen, J / Shen, W. Z / Wang, J. B / Ogawa, H / Guo, Q. X
  
• Growth condition dependence of structure and surface morphology of GaN films on (111) GaAs substrates prepared by reactive sputtering;　2004
  ANNOUNCEMENT INFO.;　Journal of Vacuum Science and Technology (A), 22, 1290-1292
  AUTHOR;　Q.X. Guo, W.J. Lu, D. Zhang, T. Tanaka, M. Nishio, H. Ogawa
  
• Effects of structure and processing technique on the properties of thermal spray WC-Co and NiCrAl/WC-Co coatings;　2004
  ANNOUNCEMENT INFO.;　MATERIALS SCIENCE AND ENGINEERING A, 371, 1/2, 187-192
  AUTHOR;　Wang, J / Li, K / Shu, D / He, X / Sun, B / Guo, Q. X / Nishio, M / Ogawa, H
  
• Generation of Terahertz Radiation via Optical Rectification and Electro-optic Detection in ZnTe Crystal;　2004
  ANNOUNCEMENT INFO.;　Acta Physica Sinica, 53, 250-255
  AUTHOR;　R. Liu, C. Gu, L. He, S. Wu, W. Shen, H. Ogawa, and Q. Guo
  
• Micro-Raman study of hexagonal InN thin films grown by reactive sputtering on GaAs;　2004
  ANNOUNCEMENT INFO.;　JOURNAL OF CRYSTAL GROWTH, 262, 1/4, 435-441
  AUTHOR;　Chen, J / Shen, W. Z / Wang, J. B / Ogawa, H / Guo, Q. X
  
• Temperature Dependence of Refractive Index in InN Thin Films Grown by Magnetron Sputtering;　2004
  ANNOUNCEMENT INFO.;　Journal of Applied Physics , 96, 3199-3205
  AUTHOR;　H. P. Zhou, W. Z. Shen, H. Ogawa, and Q.X. Guo
  
• Critical point transitions of wurtzite AIN in the vacuum-ultraviolet spectral range;　2004
  ANNOUNCEMENT INFO.;　APPLIED PHYSICS LETTERS, 84, 24, 4866-4868
  AUTHOR;　Chen, J / Shen, W. Z / Ogawa, H / Guo, Q. X
  
• Electrical properties of semiconductor InN (Review paper);　2004
  ANNOUNCEMENT INFO.;　Progress in Physics, (in Chinese), 24, 195-215
  AUTHOR;　W. Pan, W.Z. Shen, H. Ogawa, and Q.X. Guo
  
• Temperature effects on optical properties of InN thin films;　2004
  ANNOUNCEMENT INFO.;　Applied Physics A: Materials Science and Processing, 78, 89-93
  AUTHOR;　L.F. Jiang, W.Z. Shen, H.F. Yang, H. Ogawa, and Q.X. Guo
  
• Selective Dry Etching of Zinc Telluride Using Aluminum Mask;　2004
  ANNOUNCEMENT INFO.;　Japanese Journal of Applied Physics, 43, 4157-4158
  AUTHOR;　Q.X. Guo, Y. Matsumoto, T. Tanaka, M. Nishio, and H. Ogawa
  
• Synchrotron Radiation - Excited Etching of ZnTe;　2004
  ANNOUNCEMENT INFO.;　AlP series of conference proceedings, 705, 1154-1157
  AUTHOR;　Tooru Tanaka, Yusuke Kume, Sinji Tokunaga, Kazuki Hayashida, Mitsuhiro Nishio, Qixin Guo, and Hiroshi Ogawa
  
• Electroluminescence and photoluminescence characteristics in ZnTe LED fabricated by Al thermal diffusion;　2004
  ANNOUNCEMENT INFO.;　PHYSICA STATUS SOLIDI C CONFERENCES, 1, 4, 1026-1029
  AUTHOR;　Tanaka, T / Matsuno, Y / Kume, Y / Nishio, M / Guo, Q. X / Ogawa, H
  
• Growth of phosphorus-doped ZnTe layers by metalorganic vapour phase epitaxy using tris-dimethylaminophosphorus;　2004
  ANNOUNCEMENT INFO.;　physica status solidi (c), , 1, 718-721
  AUTHOR;　Kazuki Hayashida, Tooru Tanaka, Mitsuhiro Nishio, Qixin Guo, and Hiroshi Ogawa
  
• 佐賀県立九州シンクロトロン光研究センター事業の現状と利用計画;　2004
  ANNOUNCEMENT INFO.;　, 124-C, 7, 1345
  AUTHOR;　
  
• Specific Contact Resistance of Pd Electroless to p-type ZnTe;　2004
  ANNOUNCEMENT INFO.;　International Conference on Electrical Engineering 2004 Conference Proceedings , 1, 666-669
  AUTHOR;　Mitsuhiro Nishio, Tooru Tanaka, Qixin Guo, Hiroshi Ogawa
  
• Experimental studies of lattice dynamical properties in indium nitride (Review paper);　2004
  ANNOUNCEMENT INFO.;　Journal of Physics: Condensed Matter, 16, R 381-R 414
  AUTHOR;　Z.G. Qian, W.Z. Shen, H. Ogawa, and Q.X. Guo
  
• The apparent viscosity of fine particle reinforced composite melt;　2003
  ANNOUNCEMENT INFO.;　JOURNAL OF MATERIALS PROCESSING TECHNOLOGY, 136, 1/3, 60-63
  AUTHOR;　Wang, J / Guo, Q. X / Nishio, M / Ogawa, H / Shu, D / Li, K / He, S / Sun, B
  
• Lattice Vibrational Properties of Semiconductor InN (Review paper);　2003
  ANNOUNCEMENT INFO.;　Progressin Physics, 23, 257-283
  AUTHOR;　Z. G. Qian, W. Z. Shen, H.Ogawa, and Q.x.Guo
  
• Characterization of damage in reactive ion etched ZnTe;　2003
  ANNOUNCEMENT INFO.;　Journal of Vacuum Science and Technology A21, 59-61
  AUTHOR;　Qixin Guo, Yuichi Matsumoto, Tooru Tanaka, Mituhiro Nishio, and Hiroshi Ogawa
  
• Low-temperature growth of aluminum nitride on sapphire substrates;　2003
  ANNOUNCEMENT INFO.;　JOURNAL OF CRYSTAL GROWTH, 257, 1/2, 123-128
  AUTHOR;　Guo, Q. X / Yahata, K / Tanaka, T / Nishio, M / Ogawa, H
  
• Optical Bandgap Energy of Wurtzite In-Rich AlInN Alloys;　2003
  ANNOUNCEMENT INFO.;　JAPANESE JOURNAL OF APPLIED PHYSICS PART 2 LETTERS, 42, 2B, L141-L143
  AUTHOR;　Guo, Q. X / Tanaka, T / Nishio, M / Ogawa, H
  
• Fabrication of Indium Nitride Nanodots Using Anodic Alumina Templates;　2003
  ANNOUNCEMENT INFO.;　JAPANESE JOURNAL OF APPLIED PHYSICS PART 2 LETTERS, 42, 5B, L508-L510
  AUTHOR;　Guo, Q. X / Mei, X / Ruda, H / Tanaka, T / Nishio, M / Ogawa, H
  
• Temperature dependence of aluminum nitride reflectance spectra in vacuum ultraviolet region;　2003
  ANNOUNCEMENT INFO.;　Solid State Communications, 1260, 601-604
  AUTHOR;　Qixin Guo, Mitsuhiro Nishio,Hirishi Ogawa, Akira Yoshida
  
• Growth and characterization of reactive sputtered AlInN films;　2003
  ANNOUNCEMENT INFO.;　Phys. Stat. Sol.0, 2533-2536
  AUTHOR;　Q.X. Guo, K. Yahata, T. Tanaka, M. Nishio, and H. Ogawa
  
• Grain refinement of Al-Si alloy (A356) by melt thermal treatment;　2003
  ANNOUNCEMENT INFO.;　JOURNAL OF MATERIALS PROCESSING TECHNOLOGY, 141, 1, 29-34
  AUTHOR;　Wang, J / He, S / Sun, B / Guo, Q. X / Nishio, M
  
• The apparent viscosity of fine particle reinforced composite melt;　2003
  ANNOUNCEMENT INFO.;　JOURNAL OF MATERIALS PROCESSING TECHNOLOGY, 136, 1/3, 60-63
  AUTHOR;　Wang, J / Guo, Q. X / Nishio, M / Ogawa, H / Shu, D / Li, K / He, S / Sun, B
  
• Highly-ordered GaAs/AlGaAs quantum-dot arrays on GaAs (001) substrates grown by molecular-beam epitaxy using nanochannel alumina masks;　2003
  ANNOUNCEMENT INFO.;　APPLIED PHYSICS LETTERS, 82, 6, 967-969
  AUTHOR;　Mei, X / Blumin, M / Sun, M / Kim, D / Wu, Z. H / Ruda, H. E / Guo, Q. X
  
• Raman investigation of disorder in InN thin films grown by reactive sputtering on GaAs;　2003
  ANNOUNCEMENT INFO.;　Journal of Applied Physics, 93, 2643-2647
  AUTHOR;　Z.G. Qian, W.Z. Shen, H. Ogawa and Q.X. Guo
  
• Temperature dependence of the optical properties in hexagonal AlN;　2003
  ANNOUNCEMENT INFO.;　JOURNAL OF APPLIED PHYSICS, 94, 9, 5704-5709
  AUTHOR;　Jiang, L. F / Shen, W. Z / Ogawa, H / Guo, Q. X
  
• Capacitance characteristics in InN thin films grown by reactive sputtering on GaAs;　2003
  ANNOUNCEMENT INFO.;　Japanese Journal ofApplied Physics , 42, 5551-5556
  AUTHOR;　W. Pan, Z.G. Qian, W.z. Shen, H. Ogawa, and Q.X. Guo
  
• Study of far-infrared reflection and Raman scattering spectra of reactive ion etched ZnTe;　2003
  ANNOUNCEMENT INFO.;　Chinese Physics (Journal of the Chinese Physical Society (B)), 12, 1026-1032
  AUTHOR;　S. Wu, W.Z. Shen, H. Ogawa, and Q.X. Guo
  
• Effects of dry etching processes on effective refractive index of ZnTe surface layers in terahertz region;　2003
  ANNOUNCEMENT INFO.;　JOURNAL OF APPLIED PHYSICS, 94, 6, 3800-3804
  AUTHOR;　Wu, S / Ren, Z. Q / Shen, W. Z / Ogawa, H / Guo, Q. X
  
• Effects of Dry Etching Processes on Exciton and Polariton Characteristics in ZnTe;　2003
  ANNOUNCEMENT INFO.;　Journal of Applied Physics. , 94, 7144-7148
  AUTHOR;　J. H. Sun, W.B. Xie, W. Z. Shen, H. Ogawa, and Q.X. Guo,
  
• Growth and optical properties of high-quality ZnTe homoepitaxial layers by metalorganic vapor phase epitaxy;　2003
  ANNOUNCEMENT INFO.;　JOURNAL OF CRYSTAL GROWTH, 248, 43-49
  AUTHOR;　Tanaka, T / Hayashida, K / Wang, S / Guo, Q. X / Nishio, M / Ogawa, H
  
• Photoluminescence properties of ZnTe homoepitaxial layers grown by synchrotron -radiation-excited growth using nitrogen carrier gas,;　2003
  ANNOUNCEMENT INFO.;　Nuclear Instruments and Methods in Physics Research Section A, , 199, 356-360
  AUTHOR;　Tooru Tanaka, Kazuki Hayashida, Shanli Wang, Qixin Guo, Mitsuhiro Nishio, and Hiroshi Ogawa,
  
• Fabrication of ZnTe Light-Emitting Diodes Using Bridgman-Grown Substrates;　2003
  ANNOUNCEMENT INFO.;　JAPANESE JOURNAL OF APPLIED PHYSICS PART 2 LETTERS, 42, 4A, L362-L364
  AUTHOR;　Tanaka, T / Kume, Y / Nishio, M / Guo, Q. X / Ogawa, H / Yoshida, A
  
• Photoluminescence of iodine-doped ZnTe homoepitaxial layer grown by metalorganic vapor phase epitaxy;　2003
  ANNOUNCEMENT INFO.;　JOURNAL OF APPLIED PHYSICS, 93, 9, 5302-5306
  AUTHOR;　Tanaka, T / Hayashida, K / Nishio, M / Guo, Q. X / Ogawa, H
  
• Photoluminescence of Cl-doped ZnTe epitaxial layer grown by atmospheric pressure metalorganic vapor phase epitaxy;　2003
  ANNOUNCEMENT INFO.;　JOURNAL OF APPLIED PHYSICS, 94, 3, 1527-1530
  AUTHOR;　Tanaka, T / Hayashida, K / Nishio, M / Guo, Q. X / Ogawa, H
  
• Bandtail characteristics in InN thin films;　2002
  ANNOUNCEMENT INFO.;　APPLIED PHYSICS LETTERS, 80, 12, 2063-2065
  AUTHOR;　Shen, W. Z / Jiang, L. F / Yang, H. F / Meng, F. Y / Ogawa, H / Guo, Q. X
  
• Fabrication of ZnTe Nanohole Arrays by Reactive Ion Etching Using Anodic Alumina Templates;　2002
  ANNOUNCEMENT INFO.;　JAPANESE JOURNAL OF APPLIED PHYSICS PART 2 LETTERS, 41, 2A, L118-120
  AUTHOR;　Guo, Q. X / Tanaka, T / Nishio, M / Ogawa, H / Mei, X / Ruda, H
  
• Heteroepitaxial growth of gallium nitride on (111)GaAs substrates by radio frequency magnetron sputtering;　2002
  ANNOUNCEMENT INFO.;　JOURNAL OF CRYSTAL GROWTH, 237/239, 2, 1079-1083
  AUTHOR;　Guo, Q. X / Okada, A / Kidera, H / Tanaka, T / Nishio, M / Ogawa, H
  
• Effect of GaN buffer layer on crystallinity of InN grown on (111)GaAs;　2002
  ANNOUNCEMENT INFO.;　JOURNAL OF CRYSTAL GROWTH, 237/239, 2, 1032-1036
  AUTHOR;　Guo, Q. X / Okada, A / Kidera, H / Tanaka, T / Nishio, M / Ogawa, H
  
• Growth-dependent phonon characteristics in InN thin films;　2002
  ANNOUNCEMENT INFO.;　PHYSICA B, 318, 2/3, 180-187
  AUTHOR;　Qian, Z. G / Yu, G / Shen, W. Z / Ogawa, H / Guo, Q. X
  
• Effects of Dry Processing on Optical Properties of Zinc Telluride;　2002
  ANNOUNCEMENT INFO.;　JAPANESE JOURNAL OF APPLIED PHYSICS PART 1 REGULAR PAPERS SHORT NOTES AND REVIEW PAPERS, 41, 8, 5069-5072
  AUTHOR;　Guo, Q. X / Matsumoto, Y / Wang, S / Tanaka, T / Nishio, M / Ogawa, H
  
• Cathodoluminescence Study of Highly Ordered Arrays of InGaAs Quantum Dots;　2002
  ANNOUNCEMENT INFO.;　JAPANESE JOURNAL OF APPLIED PHYSICS PART 1 REGULAR PAPERS SHORT NOTES AND REVIEW PAPERS, 41, 12, 7297-7300
  AUTHOR;　Guo, Q. X / Mei, X. / Ogawa, H / Ruda, H / Qian, Z. G
  
• Photoluminescence spectra of arsenic-doped ZnTe layers grown by MOVPE using triethylarsine,;　2002
  ANNOUNCEMENT INFO.;　Journal of Crystal Growth 237/239, 1580-1584 (2002).
  AUTHOR;　Kazuki Hayashida, Tooru Tanaka, Mitsuhiro Nishio, Yong Chang, Jun Wang, Shanli Wang, Qixin Guo, and Hiroshi Ogawa
  
• Wear Resistance of Cr3C2-NiCr Detonation Spray Coating.;　2002
  ANNOUNCEMENT INFO.;　Journal of Thermal Spray Technology 11, 261-265 (2002)
  AUTHOR;　J. Wang, B. Sun, Q.X. Guo, M.Nishio, and H.Ogawa
  
• Optical constants of InN thin films on (111)GaAs grown by reactive magnetron sputtering;　2002
  ANNOUNCEMENT INFO.;　Journal of Applied Physics 91, 9803-9808 (2002).
  AUTHOR;　H.F. Yang, Z.G. Qian, W.Z. Shen, Q.J. Pang, H. Ogawa, and Q.X. Guo
  
• Molecular-beam Epitaxy growth of GaAs and InGaAs/GaAs nanodot arrays using anodic Al2O3 nanohole array template masks;　2002
  ANNOUNCEMENT INFO.;　Applied Physics Letters 81, 361-363 (2002)
  AUTHOR;　X.Y. Mei, D. Kim, H.E. Ruda, and Q.X. Guo
  
• Infrared reflection characteristics in InN thin films for the application of plasma filters;　2002
  ANNOUNCEMENT INFO.;　Journal of Applied Physics, 92, 3683-3687 (2002)
  AUTHOR;　Z.G. Qian, W.Z. Shen, H. Ogawa, and Q.X. Guo
  
• Growth rate characteristics and photoluminescence properties of ZnTe in MOVPE system;　2001
  ANNOUNCEMENT INFO.;　APPLIED SURFACE SCIENCE, 169/170, 227-230
  AUTHOR;　Nishio, M / Hayashida, K / Guo, Q. X / Ogawa, H
  
• Effect of VI/II ratio upon photoluminescence properties of aluminum-doped ZnTe layers grown by MOVPE;　2001
  ANNOUNCEMENT INFO.;　APPLIED SURFACE SCIENCE, 169/170, 223-226
  AUTHOR;　Nishio, M / Hayashida, K / Guo, Q. X / Ogawa, H
  
• Growth of InN films on (1 1 1)GaAs substrates by reactive magnetron sputtering;　2001
  ANNOUNCEMENT INFO.;　APPLIED SURFACE SCIENCE, 169/170, 340-344
  AUTHOR;　Guo, Q. X / Murata, K / Nishio, M / Ogawa, H
  
• Effect of the substrate pretreatment on the epitaxial growth of indium nitride;　2001
  ANNOUNCEMENT INFO.;　APPLIED SURFACE SCIENCE, 169/170, 345-348
  AUTHOR;　Guo, Q. X / Okada, A / Nishio, M / Ogawa, H
  
• Photoluminescence properties of ZnTe homoepitaxial films deposited by synchrotron-radiation-excited growth;　2001
  ANNOUNCEMENT INFO.;　NUCLEAR INSTRUMENTS AND METHODS IN PHYSICS RESEARCH SECTION A, 467/468, 2, 1225-1228
  AUTHOR;　Nishio, M / Hayashida, K / Harada, H / Mitsuishi, Y / Guo, Q. X / Ogawa, H
  
• A356 alloy refined by melt thermal treatment;　2001
  ANNOUNCEMENT INFO.;　INTERNATIONAL JOURNAL OF CAST METALS RESEARCH, 14, 3, 165-168
  AUTHOR;　Wang, J / He, S / Sun, B / Zhou, Y / Guo, Q. X / Nishio, M
  
• Characteristics of Reactive Ion Etching for Zinc Telluride Using CH4 and H2 Gases;　2001
  ANNOUNCEMENT INFO.;　Journal of Vacuum Science and Technology A 19, 2232-2234 (2001)
  AUTHOR;　Qixin Guo, Motoatsu Matsuse, Tooro Tanaka, Mitsuhiro Nishio, Hiroshi Ogawa, Y. Chang, J. Wang, S.L. Wang
  
• Temperature effect on electronic structure of AlN;　2001
  ANNOUNCEMENT INFO.;　Physical Review B 64, 113105-1--3 (2001)
  AUTHOR;　Qixin Guo, Mitsuhiro Nishio, Hiroshi Ogawa, Akira Yoshida
  
• A study on novel non-thermal epitaxial technique of compound semiconductor using synchrotron radiation;　2001
  ANNOUNCEMENT INFO.;　Journal of the Indian Institute of Science 81, 549-555 (2001).
  AUTHOR;　Mitsuhiro Nishio, Kazuki Hayashida, Tooru Tanaka, Qixin Guo, and Hiroshi Ogawa
  
• Effects of wavelength upon photoluminescence properties of ZnTe layers grown by photo-assisted MOVPE;　2000
  ANNOUNCEMENT INFO.;　JOURNAL OF CRYSTAL GROWTH, 214/215, 216-219
  AUTHOR;　Hayashida, K / Nishio, M / Harada, H / Furukawa, S / Guo, Q. X / Ogawa, H
  
• Effects of substrate temperature upon photoluminescence properties of ZnTe layers grown by photo-assisted MOVPE;　2000
  ANNOUNCEMENT INFO.;　JOURNAL OF CRYSTAL GROWTH, 221, 1/4, 404-409
  AUTHOR;　Hayashida, K / Nishio, M / Harada, H / Furukawa, S / Guo, Q. X / Ogawa, H
  
• Growth of AlInN on (111)GaAs Substrates;　2000
  ANNOUNCEMENT INFO.;　JAPANESE JOURNAL OF APPLIED PHYSICS PART 2 LETTERS, 39, 11B, L1143-L1145
  AUTHOR;　Guo, Q. X / Okada, A / Kidera, H / Nishio, M / Ogawa, H
  
• Reactive ion etching of indium nitride using CH4 and H2 gases;　2000
  ANNOUNCEMENT INFO.;　Japanese Journal of Applied Physics, 39, 5048-5051 (2000)
  AUTHOR;　Q.X.Guo, M. Matsuse, M.Nishio, and H.Ogawa
  
• Ohmic contacts to p-type ZnTe using electroless Pd;　1999
  ANNOUNCEMENT INFO.;　THIN SOLID FILMS, 343/344, 2, 508-511
  AUTHOR;　Nishio, M / Guo, Q. X / Ogawa, H
  
• Effect of dopant flow rate upon photoluminescence properties in aluminum-doped ZnTe layers grown by MOVPE;　1999
  ANNOUNCEMENT INFO.;　THIN SOLID FILMS, 343/344, 2, 512-515
  AUTHOR;　Nishio, M / Guo, Q. X / Ogawa, H
  
• Effects of nitrogen/argon ratio on composition and structure of InN films prepared by r.f. magnetron sputtering;　1999
  ANNOUNCEMENT INFO.;　THIN SOLID FILMS, 343/344, 2, 524-527
  AUTHOR;　Guo, Q. X / Shingai, N / Mitsuishi, Y / Nishio, M / Ogawa, H
  
• Homoepitaxial growth of ZnTe by synchrotron radiation using metalorganic sources;　1999
  ANNOUNCEMENT INFO.;　Thin Solid Films, 343/344, 504-507 (1999).
  AUTHOR;　M.Nishio, Y.Mitsuishi, Q.X.Guo, and H.Ogawa
  
• Growth characteristics of homoepitaxial ZnTe films deposited by synchrotron radiation using metalorganic sources;　1999
  ANNOUNCEMENT INFO.;　Japanese Journal of Applied Physics, Suppl.38-1, 568-571 (1999).
  AUTHOR;　M.Nishio, T.Enoki, Q.X.Guo, and H.Ogawa
  
• Low-Temperature Growth of InN Films on (111)GaAs Substrates;　1999
  ANNOUNCEMENT INFO.;　Japanese Journal of Applied Physics, 38, L490-L491 (1999).
  AUTHOR;　Q.X.Guo, M.Nishio, H.Ogawa, and A.Yoshida
  
• Extended X-ray absorption fine structure (EXAFS) of InN and InGaN;　1999
  ANNOUNCEMENT INFO.;　Physica status solidi (b), 216, 151-156 (1999).
  AUTHOR;　K.P.O'Donnell, R.W.Martin, M.E.White, J.F.W.Mosselmans, and Q.X.Guo
  
• Energy loss spectrum of AlN in the 6-120 eV region;　1998
  ANNOUNCEMENT INFO.;　JOURNAL OF CRYSTAL GROWTH, 189/190, 1/4, 457-460
  AUTHOR;　Guo, Q. X / Nishio, M / Ogawa, H / Yoshida, A
  
• Deposition of InN thin films by radio frequency magnetron sputtering;　1998
  ANNOUNCEMENT INFO.;　JOURNAL OF CRYSTAL GROWTH, 189/190, 1/4, 466-470
  AUTHOR;　Guo, Q. X / Shingai, N / Nishio, M / Ogawa, H
  
• Electronic structure of indium nitride studied by photoelectron spectroscopy;　1998
  ANNOUNCEMENT INFO.;　PHYSICAL REVIEW -SERIES B-, 58, 23, 15304-15306
  AUTHOR;　Guo, Q. X / Nishio, M / Ogawa, H / Wakahara, A / Yoshida, A
  
• Optical properties of aluminum nitride;　1997
  ANNOUNCEMENT INFO.;　PHYSICAL REVIEW -SERIES B-, 55, 24, R15987-R15988
  AUTHOR;　Guo, Q. X / Nishio, M / Ogawa, H / Yoshida, A
  
• Optical spectra of InN single crystal in VUV region;　1996
  ANNOUNCEMENT INFO.;　Journal of Electron Spectroscopy and Related Phenomena, 79, 9-12 (1996).
  AUTHOR;　Q.Guo, H.Ogawa, and A.Yoshida
  
• Optical properties of zinc telluride in vacuum ultraviolet region;　1996
  ANNOUNCEMENT INFO.;　Solid State Communications, 100, 813-815 (1996).
  AUTHOR;　Q.X.Guo, M.Ikejiri, M.Nishio, and H.Ogawa
  
• Growth of AlInN single crystal films by microwave excited metalorganic vapor phase epitaxy;　1995
  ANNOUNCEMENT INFO.;　Journal of Crystal Growth, 146, 462-466 (1995).
  AUTHOR;　Q.X.Guo, H.Ogawa, and A.Yoshida
  
• Growth of InN films on GaAs(111) and GaP(111) substrates by microwave excited metalorganic vapor phase epitaxy;　1995
  ANNOUNCEMENT INFO.;　Applied Physics Letters, 66, 715-717 (1995).
  AUTHOR;　Q.X.Guo, H.Ogawa, H.Yamano, and A.Yoshida
  
• Crystal structure and orientation of AlInN epitaxial layers grown on (0001) α-Al2O3 substrates;　1995
  ANNOUNCEMENT INFO.;　Japanese Journal of Applied Physics, 34, 4653-4657 (1995).
  AUTHOR;　Q.X.Guo, N.Itoh, H.Ogawa, and A.Yoshida
  
• Low temperature liquid phase epitaxy of silicon from gallium solution;　1995
  ANNOUNCEMENT INFO.;　Journal of Crystal Growth, 155, 193-197 (1995).
  AUTHOR;　H.Ogawa, Q.Guo, and A.Yoshida
  
• Microhardness of indium nitride single crystal films;　1994
  ANNOUNCEMENT INFO.;　Japanese Journal of Applied Physics, 33, 90-91 (1994).
  AUTHOR;　Q.X.Guo and A.Yoshida
  
• Structural properties of InN film grown on sapphire substrate by microwave excited metalorganic vapor phase epitaxy;　1994
  ANNOUNCEMENT INFO.;　Journal of Applied Physics, 75, 4927-4932 (1994).
  AUTHOR;　Q.X.Guo, T.Yamamura, A.Yoshida, and N.Itoh
  
• Temperature dependence of bandgap change in InN and AlN;　1994
  ANNOUNCEMENT INFO.;　Japanese Journal of Applied Physics, 33, 2453-2456 (1994).
  AUTHOR;　Q.X.Guo and A.Yoshida
  
• Thermal stability of indium nitride single crystalline films;　1993
  ANNOUNCEMENT INFO.;　Journal of Applied Physics, 73, 7969-7971 (1993).
  AUTHOR;　Q.X.Guo, O.Kato, and A.Yoshida
  
• Degragation mechanism of Au/AOx/Al tunnel junction;　1993
  ANNOUNCEMENT INFO.;　Journal of the Physical Society of Japan, 62, 1286-1291 (1993).
  AUTHOR;　Y.Hirao, M.Haraguchi, M.Fukui, Q.Guo, and A.Yoshida
  
• Chemical etching of indium nitride;　1992
  ANNOUNCEMENT INFO.;　Journal of the Electrochemical Society, 139, 2008-2009 (1992).
  AUTHOR;　Q.X.Guo, O.Kato and A.Yoshida
  
• Optical constants of indium nitride;　1992
  ANNOUNCEMENT INFO.;　Solid State Communications, 83, 721-723 (1992).
  AUTHOR;　Q.X.Guo, O.Kato, M.Fujisawa and A.Yoshida
  

Material, Commentary, Editorials, Research Report, A Comprehensive Journal Articles

• Review of Ga2O3 based optoelectronic devices (Review Article);　2019/12
  ANNOUNCEMENT INFO.;　Materials Today Physics, 11, 100157, 2019.
  AUTHOR;　Daoyou Guo, Qixin Guo*, Zhengwei Chen, Zhenping Wu, Peigang Li, Weihua Tang
  
• Epitaxial growth of ZnTe layers on (111) GaAs substrates;　2012/04
  ANNOUNCEMENT INFO.;　Annual Report of ILE Joint Research, Institute of Laser Engineering, Osaka University, pp.157-158 (2012).
  AUTHOR;　Qixin Guo, K. Saito, Tooru Tanaka, Mitsuhiro Nishio, Masahiko Tani, and Masanori Hangyo
  
• Crystal Growth and Doping of ZnTe-based Materials for Optoelectronic Applications;　2011/06
  ANNOUNCEMENT INFO.;　JOURNAL OF CRYSTALLIZATION PHYSICS AND CHEMISTRY 2(1), (January-June 2011) pp. 17-37.
  AUTHOR;　Tooru Tanaka, Katsuhiko Saito, Qixin Guo and Mitsuhiro Nishio
  
• Low-temperature buffer layer effects on the quality of ZnTe epilayers;　2011/05
  ANNOUNCEMENT INFO.;　Annual Report of ILE Joint Research, Institute of Laser Engineering, Osaka University, pp.221-222 (2011).
  AUTHOR;　Qixin Guo, K. Saito, Tooru Tanaka, Mitsuhiro Nishio, Masahiko Tani, and Masanori Hangyo
  
• Improvement of Crystal Quality of ZnTe Epilayers on Sapphire Substrates;　2010/04
  ANNOUNCEMENT INFO.;　Annual Report of ILE Joint Research, Osaka University, pp155-156, 2010.
  AUTHOR;　Q.X. Guo, Y. Kadoguchi, Y. Ding, T. Tanaka, M. Nishio, M. Tani, and M. Hangyo
  
• Growth and Characterization of ZnTe Epilayers on Sapphire Substrate;　2009/04
  ANNOUNCEMENT INFO.;　ILE Annual Report of Collaborative Research, Osaka University, pp. 161-162, (2009).
  AUTHOR;　Q.X. Guo, Y. Nakao, Y. Ding, T. Tanaka, M. Nishio, M. Tani, and M. Hangyo
  
• 新材料による高効率純緑色発光ダイオード;　2009/01
  ANNOUNCEMENT INFO.;　, 29, 2, 43-51
  AUTHOR;　
  
• Growth of High-Quality ZnTe Epilayers for Terahertz Devices Applications;　2008/04
  ANNOUNCEMENT INFO.;　Annual Report of ILE Joint Research, Institute of Laser Engineering, Osaka University, pp.217-218 (2008).
  AUTHOR;　Qixin Guo, Yusuke Kume, Tooru Tanaka, Mitsuhiro Nishio, Hiroshi Ogawa,　Masahiko Tani, and Masanori Hangyo
  
• Current Statues of researches on Electronic Science and Technology;　2007/12
  ANNOUNCEMENT INFO.;　Journal of Shanghai Dianji University, Vol. 10, 245-248 (2007) (in Chinese)
  AUTHOR;　郭其新
  
• SAGA Light Sourceの現状及びシンクロトロン光を用いたプロセス技術;　2007/04
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• シンクロトロン光励起プロセスの半導体応用と展望,;　2007
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• Keys to success of engineering education in global society,;　2003
  ANNOUNCEMENT INFO.;　Proceeding of Intemational Fommon Higher Vbcational-technical Education and Globalization, 13, 1-11
  AUTHOR;　Qi xin Guo
  

General Lectures

• Growth of ZnTe thin films on graphene/SiO2/Si substrates by MOCVD method;　2024/10
  ANNOUNCEMENT INFO.;　International Conference on Innovations in Engineering and Social Science (ICIESS) 2024, Fukuoka, October 12-14, 2024, 17:00-18:00 Session 9, October 12, 2024.
  AUTHOR;　Katsuhiko Saito, Hayate Miyako, Tooru Tanaka and Qixin Guo
  
• Development of UV-VIS luminescence measurement system for ultrawide bandgap semiconductors;　2024/08
  ANNOUNCEMENT INFO.;　15th International Conference on Synchrotron Radiation Instrumentation, 26-30 August 2024, Hamburg, Germany, P1.178, 27 August, 2024.
  AUTHOR;　Katsuhiko Saito, Tooru Tanaka, Kazutoshi Takahashi, and Qixin Guo*
  
• Characteristics of MgGa2O4 films grown by oxygen radicals assisted pulsed laser deposition;　2024/08
  ANNOUNCEMENT INFO.;　14th International Conference on Ceramic Materials and Components for Energy and Environmental Systems, 18–22 August 2024, Budapest Congress Center, Budapest, Hungary, 17：25-17：40, 21 August 2024
  AUTHOR;　Qixin Guo, Junya Tetsuka, Zewei Chen, Makoto Arita, Katsuhiko Saito, Tooru Tanaka
  
• Low Temperature Growth and Characteristics of GaInN Films by Reactive Sputtering;　2024/07
  ANNOUNCEMENT INFO.;　The 17th International Symposium on Sputtering & Plasma Processes, 02-05 July 2024, KRP Kyoto, P3-06, 17:40-19:10, July 3.
  AUTHOR;　Qixin Guo, Kotaro Nonaka, Katsuhiko Saito, and Tooru Tanaka
  
• Application of synchrotron light for wide bandgap optoelectronic materials;　2024/03
  ANNOUNCEMENT INFO.;　International workshop on wide bandgap semiconductors, 9:00-10:00, March 2, 2024 Ningbo University, China.
  AUTHOR;　Qixin GUO
  
• Low temperature growth of magnesium gallate crystalline films;　2023/08
  ANNOUNCEMENT INFO.;　The International Conference on Crystal Growth and Epitaxy-ICCGE-20, 30 July- 4 August, 2023, Naples, Italy, 12:00 - 12:15, 4 August.
  AUTHOR;　Qixin Guo, Junya Tetsuka, Zewei Chen, Makoto Arita, Katsuhiko Saito, Tooru Tanaka
  
• Alternating molecular beam epitaxial growth of phosphorus-doped ZnTe thin films;　2022/11
  ANNOUNCEMENT INFO.;　The 7th Asian Applied Physics Conference (Asian-APC), November 26-27, 2022, Oita University, 26Ea-2.
  AUTHOR;　Muhamad Mustofa, Katsuhiko Saito, Qixin Guo, Tooru Tanaka
  
• RF スパッタリング法による InGaN薄膜の低温成長と評価;　2022/11
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• MOVPE成長Al ドープ ZnTe薄膜特性に及ぼすポストアニーリング処理温度の影響 (２);　2022/11
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• ZnTeO光電極における光電気化学特性の酸素濃度依存性;　2022/11
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• n-ZnS/ZnTeヘテロ接合光電極を用いた水の可視光分解用光触媒の開発;　2022/11
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• 分子線エピタキシー法による ZnNiO薄膜の成長と評価;　2022/11
  ANNOUNCEMENT INFO.;　2022年応用物理学会九州支部学術講演会、2022年１１月２６日、大分大学、26Ca-1
  AUTHOR;　
  
• 多重セレン化法による Cu2ZnSnSe4薄膜の作製と評価;　2022/11
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• 高周波マグネトロンスパッタリング法によりサファイア基板上に作製した Cu3N 薄膜の基板温度依存性;　2022/11
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• Cl ドープ ZnCdTeO中間バンド型太陽電池の光電変換特性の温度依存性;　2022/11
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• PLD法を用いた MgGa2O4薄膜の作製と評価;　2022/11
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• MBE growth and photochemical properties evaluation of n-ZnS/ZnTe thin films;　2022/11
  ANNOUNCEMENT INFO.;　33rd International Photovoltaic and Engineering Conference November 13-17, 2022, Nagoya, Japan, WeP-21-05
  AUTHOR;　Ryusuke Tsutsumi, Katsuhiko Saito, Qixin Guo, Shigeru Ikeda, Tooru Tanaka
  
• Photoelectrochemical properties of a highly-mismatched ZnTeO alloys grown by molecular beam epitaxy;　2022/11
  ANNOUNCEMENT INFO.;　33rd International Photovoltaic and Engineering Conference November 13-17, 2022, Nagoya, Japan, WeP-21-03
  AUTHOR;　Takaki Sonoyama, Katsuhiko Saito, Qixin Guo, Shigeru Ikeda, Tooru Tanaka
  
• Effect of nitrogen partial pressure on properties of Cu3N thin films by RF magnetron sputtering;　2022/11
  ANNOUNCEMENT INFO.;　33rd International Photovoltaic and Engineering Conference November 13-17, 2022, Nagoya, Japan, TuP-42-12
  AUTHOR;　Miho Ohishi, Katsuhiko Saito, Qixin Guo, Tooru Tanaka
  
• The Effect of MBE alternating growth of phosphorus-doped ZnTe thin films;　2022/11
  ANNOUNCEMENT INFO.;　33rd International Photovoltaic and Engineering Conference November 13-17, 2022, Nagoya, Japan, TuP-42-03
  AUTHOR;　Muhamad Mustofa, Katsuhiko Saito, Qixin Guo, Tooru Tanaka
  
• Effect of Cl-doping in ZnCdTeO on photovoltaic properties of ZnCdTeO intermediate band solar cells;　2022/11
  ANNOUNCEMENT INFO.;　33rd International Photovoltaic and Engineering Conference November 13-17, 2022, Nagoya, Japan,TuP-42-01
  AUTHOR;　Daiki Tani, Katsuhiko Saito, Qixin Guo, Tooru Tanaka
  
• Effect of NaF addition to precursor for fabricating Cu2ZnSnSe4 thin films on alkali-free substrates by selenization;　2022/11
  ANNOUNCEMENT INFO.;　33rd International Photovoltaic and Engineering Conference November 13-17, 2022, Nagoya, Japan,TuP-32-37.
  AUTHOR;　Yuta Tamura, Katsuhiko Saito, Qixin Guo, Tooru Tanaka
  
• RFスパッタリング法によるInGaN の薄膜成長と評価;　2022/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• Clドープ ZnCdTeO 中間バンド型太陽電池の光電変換特性の評価;　2022/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• 分子線エピタキシー法によるZnTeO薄膜の成長と光電気化学特性の評価;　2022/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• Growth and Characterization of GaInN Films by Reactive Sputtering;　2022/09
  ANNOUNCEMENT INFO.;　The 22nd International Vacuum Congress, September 11-16 , 2022, Sapporo Convention Center, Sapporo, Japan, Wed-PO1B-9.
  AUTHOR;　Qixin Guo, Ryuuichi Udou, Kotaro Nonaka, Katsuhiko Saito, and Tooru Tanaka
  
• Growth of Magnesium Gallate Films by Pulsed Laser Deposition;　2022/09
  ANNOUNCEMENT INFO.;　9th International Symposium on Control of Semiconductor Interfaces, Nagoya, Japan, MP2-7, September 5, 2022.
  AUTHOR;　Qixin Guo, Junya Tetsuka, Zewei Chen, Katsuhiko Saito, Tooru Tanaka
  
• Heteroepitaxial Growth of (AlGa)2 O3 Thin Films on Sapphire Substrates by Plasma-Assisted Pulsed Laser Deposition;　2022/05
  ANNOUNCEMENT INFO.;　5th International Workshop on UV Materials and Devices(IWUMD 2022), Maison Glad Jeju, Jeju, Korea, May 23-26, 2022, WeA1-3, Online.
  AUTHOR;　Zewei Chen, Makoto Arita, Katsuhiko Saito, Tooru Tanaka, Qixin Guo*
  
• Rutile GeO2 Film with (100) Orientation Grown on c-Plane Sapphire Substrate by Pulsed Laser Deposition;　2022/05
  ANNOUNCEMENT INFO.;　5th International Workshop on UV Materials and Devices(IWUMD 2022), Maison Glad Jeju, Jeju, Korea, May 23-26, 2022, P-28, On-demand, Online.
  AUTHOR;　Gaofeng Deng, Katsuhiko Saito, Tooru Tanaka, Qixin Guo*
  
• 透明酸化物半導体の３次元角度分解光電子分光;　2020/12
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• ブロック層にCl ドープZnTe を用いたZnTeO中間バンド型太陽電池の作製と評価;　2020/11
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• MBE法を用いて成長したP ドープZnTe 薄膜のアニール効果;　2020/11
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• MOVPE成長Al ドープZnTe薄膜特性に及ぼす基板温度とポストアニールの効果;　2020/11
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• PLD法によるSi(100)基板上へのTm ドープGa2O3薄膜の作製と評価;　2020/11
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• HIGH TRNASMITTANCE TRANSPARENT CONDUCTIVE OXIDES OF ROCKSALT-AL-DOPED ZNCDO FOR FULL SPECTRUM SOLAR CELLS;　2020/11
  ANNOUNCEMENT INFO.;　30th International Photovoltaic Science and Engineering Conference (PVSEC-30) & Global Photovoltaic Conference 2020 (GPVC 2020), November 8-13, 2020, Jeju, Korea (Hybrid), P2-T6-28.
  AUTHOR;　HyoChang Jang, Katsuhiko Saito, Qixin Guo, Kin Man Yu, Wladek Walukiewicz, and Tooru Tanaka
  
• IMPACT OF O2 FLOW ON PROPERTIES OF CU4O3 THIN FILMS FABRICATED BY RF SPUTTERING;　2020/11
  ANNOUNCEMENT INFO.;　30th International Photovoltaic Science and Engineering Conference (PVSEC-30) & Global Photovoltaic Conference 2020 (GPVC 2020), November 8-13, 2020, Jeju, Korea (Hybrid), T6-03-OP-5.
  AUTHOR;　Md Abdul Majed Patwary, Chun Yuen Ho, Katsuhiko Saito, Qixin Guo, Kin Man Yu, Wladek Walukiewicz, Tooru Tanaka
  
• 透明酸化物半導体の３次元角度分解光電子分光;　2020/10
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• シンクロトロン光を用いたワイドギャップ化合物半導体の評価;　2020/10
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• 分子線エピタキシー法によるPドープZnTe薄膜のアニール効果;　2020/10
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• RFスパッタリング法によるGaNを用いたInGaN薄膜の作製と評価;　2020/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• Erドープ（AlGa）2O3薄膜による緑色発光增強;　2020/09
  ANNOUNCEMENT INFO.;　2020年度（第73回）電気・情報関係学会九州支部連合大会 2020年9月27日　06-2A-06 オンライン
  AUTHOR;　
  
• PLD 法を用いて作製されたEuドープ（AlGa）2O3薄膜の発光特性;　2020/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• PLD法による（AlGaIn）2O3のエピタキシャル成長;　2020/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• PLD法によるSi基板上へのTmドープGa2O3薄膜の作製と評価;　2020/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• プラズマアシストPLD法によるサファイア基板上のコランダム構造Ga2O3薄膜のエピタキシャル成長;　2020/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• 分子線エピタキシー法を用いた光触媒応用に向けたZnTe1-xOx 薄膜の作製と評価;　2020/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• ZnSeを含む積層プリカーサを用いたセレン化法によるCu2ZnSnSe4薄膜の作製;　2020/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• Growth of low resistive Al-doped ZnCdO thin films with rocksalt structure for Transparent Conductive Oxide;　2020/06
  ANNOUNCEMENT INFO.;　47th IEEE Photovoltaic Specialists Conference June 15 - August 21, 2020 PVSC 47 Virtual Meeting, ORALS - AREA 1: FUNDAMENTALS AND NEW CONCEPTS FOR FUTURE TECHNOLOGIES 1
  AUTHOR;　HyoChang Jang, Katsuhiko Saito, Qixin Guo, Tooru Tanaka, Kin Man Yu, Wladek Walukiewicz
  
• Growth and Characterization of Tm Doped Gallium Oxide Films;　2019/12
  ANNOUNCEMENT INFO.;　MATERIALS RESEARCH MEETING 2019, Dec.10-14, 2019, Yokohama, H3-12-P16.
  AUTHOR;　Qixin GUO, Shunsuke MOTOMURA, Katsuhiko SAITO, Tooru TANAKA
  
• Growth and characterization RS-ZnCdO thin films on MgO(100) substrates by molecular beam epitaxy;　2019/12
  ANNOUNCEMENT INFO.;　MATERIALS RESEARCH MEETING 2019, Dec.10-14, 2019, Yokohama, H3-11-005.
  AUTHOR;　Jang HYOCHANG, Katsuhiko SAITO, Qixin GUO,Tooru TANAKA, Man Yu KIM, Wladek WALUKIEWICZ
  
• Low temperature growth of Tm doped gallium oxide films by plasma-assisted pulsed laser deposition;　2019/09
  ANNOUNCEMENT INFO.;　The 4th International Workshop on Ultraviolet Materials and Devices (IWUMD-IV), September 8-13, 2019, Saint Petersburg, Russia, We-3p.
  AUTHOR;　Qixin Guo, Shunsuke Motomura, Katsuhiko Saito, Tooru Tanaka
  
• InPをドーパント源に用いたPドープZnTe薄膜のMBE成長;　2019/03
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• 2.MBE によるCl ドープZnCdTeO 層の膜特性の組成依存性;　2019/03
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• 1.Growth of Al-doped ZnCdO thin films on MgO substrates by molecular beam epitaxy;　2019/03
  ANNOUNCEMENT INFO.;　
  AUTHOR;　HyoChang Jang, Kento Matsuo, Katsuhiko Saito, Qixin Guo, Tooru Tanaka
  
• Effect of oxygen flow rate and temperature on Cu4O3 Thin Films by Radio Frequency Sputtering;　2018/12
  ANNOUNCEMENT INFO.;　The 3rd Asian Applied Physics Conference (Asian-APC), 8 December, 2018, Fukuoka, 8Po-6.
  AUTHOR;　Md Abdul Majed Patwary, Tooru Tanaka, Katsuhiko Saito, Qixin Guo, Kin Man Yu, and Wladek Walukiewicz
  
• Characterization of Al-doped ZnCdO thin films on MgO substrates by molecular beam epitaxy;　2018/12
  ANNOUNCEMENT INFO.;　The 3rd Asian Applied Physics Conference (Asian-APC), 8 December, 2018, Fukuoka, 8Po-5.
  AUTHOR;　HyoChang Jang, Kento Matsuo, Tooru Tanaka, Katsuhiko Saito and Qixin Guo
  
• 酸素ラジカル源を用いたPLD 法によるα-Al2O3 基板上へのTm ドープGa2O3 薄膜の成長と評 価;　2018/12
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• 酸素ラジカル源を用いたPLD 法によるサファイア基板上へのSi ドープGa2O3 薄膜の作製と評価;　2018/12
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• RF スパッタリング法によるGaN を用いたInGaN 薄膜成長に関する研究;　2018/12
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• Cl ドープZnTeO 中間バンド型太陽電池における光電変換特性の酸素濃度及び温度依存性;　2018/12
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• 減圧MOVPE 法による(100)GaAs 基板上へのZnMgSeTe 薄膜成長;　2018/12
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• 分子線エピタキシー法によるP ドープZnTe 薄膜の成長と評価;　2018/12
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• 分子線エピタキシー法を用いたGaAs(100)基板上へのZnSe 薄膜成長;　2018/12
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• MBE 法により成長したCl ドープZnCdTeO 薄膜の特性評価;　2018/09
  ANNOUNCEMENT INFO.;　2018年第79回応用物理学会秋季学術講演会, 21p-431B-2, 名古屋国際会議場, 2018年9月21日.
  AUTHOR;　
  
• SnSeを用いたセレン化法によるCu2ZnSnSe4薄膜の作製と評価;　2018/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• ClドープZnTeO中間バンド型太陽電池における光電変換特性の酸素濃度依存性;　2018/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• Growth of P-doped ZnTe epilayers on ZnTe substrates by molecular beam epitaxy;　2018/09
  ANNOUNCEMENT INFO.;　20th International Conference on Molecular Beam Epitaxy, September 4, 2018, Shanghai, China, Tu-P-20.
  AUTHOR;　K. Matsuo, Y. Watanabe, T. Tanaka, K. Saito, Y. Nose, Q. Guo, K. M. Yu, and W. Walukiewicz
  
• Growth and characterization of CdZnO thin films on sapphire substrates by MBE;　2018/09
  ANNOUNCEMENT INFO.;　20th International Conference on Molecular Beam Epitaxy, September 4, 2018, Shanghai, China, Tu-P-20.
  AUTHOR;　HyoChang Jang, Tooru Tanaka, Katsuhiko Saito, Qixin Guo, Kin Man Yu, Yeonbae Lee, and Wladek Walukiewicz
  
• Growth of InGaN Films by Reactive Sputtering;　2018/08
  ANNOUNCEMENT INFO.;　International Symposium on Growth of III-Nitrides ISGN-7, 5-10 August 2018, Warsaw, Poland, Po10, 7 Aug. 2018
  AUTHOR;　Qixin Guo*, Katsuhiko Saito, Tooru Tanaka
  
• Investigation on structural properties of rare earth doped gallium oxide films;　2017/11
  ANNOUNCEMENT INFO.;　International Workshop on UV Materials and Devices (IWUMD 2017) November 14-18, 2017, Fukuoka, Th-P3
  AUTHOR;　K. Nishihagi, K. Saito, T. Tanaka, and Q. X. Guo*
  
• Characteristics of gallium oxide films grown by oxygen plasma assisted pulsed laser deposition;　2017/11
  ANNOUNCEMENT INFO.;　International Workshop on UV Materials and Devices (IWUMD 2017) November 14-18, 2017, Fukuoka, Th-P1
  AUTHOR;　C. Hu, K. Saito, T. Tanaka, and Q. Guo*
  
• Optical and electrical properties of Si-doped Ga2O3 films;　2016/10
  ANNOUNCEMENT INFO.;　International Conference on Optoelectronics and Microelectronics Technology and Application OMTA 2016, Shanghai, 10-12 Oct. Conf, 5,6, Session 4, 10:40-10:50, 12 Oct. 2016
  AUTHOR;　Fabi Zhang, Qixin Guo
  
• Crystal growth of gallium oxide based wide bandgap semiconductors;　2016/10
  ANNOUNCEMENT INFO.;　International conference on applied crystallography, October 17-19, 2016, Houston, USA, Oct. 18 16:45-17:10.
  AUTHOR;　Qixin Guo, Katsuhiko Saito, Tooru Tanaka, Mitsuhiro Nishio
  
• Photoluminescence and Electrical Properties of P-doped ZnTe Layers Grown by Low Pressure MOVPE;　2016/08
  ANNOUNCEMENT INFO.;　The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18), August 7-12, 2016, Nagoya, ThP-T04-11.
  AUTHOR;　M. Nishio, K. Saito, Y. Nakatsuru, T. Shono, Y.Matsuo, A. Tomota, T. Tanaka, and Q. X. Guo
  
• Growth of ZnMgSeTe nearly Lattice-matched to ZnTe and p-type Doping by Low-pressure MOVPE;　2016/08
  ANNOUNCEMENT INFO.;　The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18), August 7-12, 2016, Nagoya,ThP-T04-10.
  AUTHOR;　K. Saito, M. Nishio, Y. Nakatsuru, T. Shono, Y.Matsuo, A. Tomota, T. Tanaka, and Q. X. Guo
  
• Low temperature growth of ZnO/MgZnO single quantum well;　2016/08
  ANNOUNCEMENT INFO.;　The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18), August 7-12, 2016, Nagoya,ThP-T04.
  AUTHOR;　X. Wang, K. Saito, T. Tanaka, M. Nishio, Q.-X. Guo*
  
• Epitaxial growth of Ga2O3:Er films on silicon substrate;　2016/08
  ANNOUNCEMENT INFO.;　The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18), August 7-12, 2016, Nagoya, MoP-G04.
  AUTHOR;　Z. Chen, K. Saito, T. Tanaka, M. Nishio, M. Arita, Q. Guo*
  
• Thickness influence on properties of Ga2O3 films grown by pulsed laser deposition;　2016/07
  ANNOUNCEMENT INFO.;　The International Workshop on UV Materials and Devices (IWUMD-2016), Peking University, July 27-71, 2016, P-8, 16:00-18:00, July 28.
  AUTHOR;　Fabi Zhang, Qixin Guo
  
• Green Electroluminescence from Er Doped Gallium Oxide/Silicon Heterostructured Light Emitting Device;　2016/06
  ANNOUNCEMENT INFO.;　58th Electronic Materials Conference, June 22-24, 2016, University of Delaware, Newark, DE, June 22, PS7.
  AUTHOR;　Qixin Guo, Zhenwei Chen, Shinji Noda, Katsuhiko Saito, Tooru Tanaka, and Mitsuhiro Nishio
  
• Effect of Substrate Temperature on Structures and Optical Properties of (AlGa)2O3 Films;　2015/11
  ANNOUNCEMENT INFO.;　International Workshop on Gallium Oxide and Related Materials 2015, E33, November 3-6, 2015, Kyoto.
  AUTHOR;　X. Wang, K. Saito, T. Tanaka, M. Nishio, and Q. Guo*
  
• The Effect of Growth Temperature on Structural and Optical Properties of Europium Doped Ga2O3 Films;　2015/11
  ANNOUNCEMENT INFO.;　International Workshop on Gallium Oxide and Related Materials 2015, E30, November 3-6, 2015, Kyoto.
  AUTHOR;　Z. Chen, K. Saito, T. Tanaka, M. Nishio, and Q. Guo*
  
• Si-Doped Ga2O3 Films Grown by Pulsed Laser Deposition;　2015/11
  ANNOUNCEMENT INFO.;　International Workshop on Gallium Oxide and Related Materials 2015, E29, November 3-6, 2015, Kyoto.
  AUTHOR;　F. Zhang, K. Saito, T. Tanaka, M. Nishio, and Q. Guo*
  
• MBEによる高不整合材料ZnCdTeO薄膜の成長;　2015/03
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• ZnTe基板上へのClドープCdTe薄膜のMBE成長;　2015/03
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• 有機金属気相成長法によるZnTe基板上へのZn1-xMgxSeyTe1-xの成長とPドーピング;　2014/12
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• スパッタリング法によるMgO(100)基板上へのInN薄膜成長;　2014/12
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• 有機金属気相成長法によるAl2O3基板上へのZn1-xMgxSeyTe1-y膜の成長とバンドギャップの評価;　2014/12
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• 有機金属気相成長法で作製されたZnTeエピ膜の光学的結品学的特性に及ぼす圧力の影響;　2014/12
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• 分子線エピタキシ一法によるZnTe基阪上へのClドープCdTe層の成長;　2014/12
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• 減圧有機金属気相成長法により作製されたZnTeエピ膜の成長特性;　2014/12
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• ZnTe(111)薄膜上へのアンドープZnO薄膜成長及び特性評価;　2014/12
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• Cu2ZnSn(S,Se)4薄膜太陽電池応用を目指したZnO:Alおよびi-ZnO薄膜の作製と評価;　2014/12
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• 多源蒸着法によるCu2SnSe3の作製と評価;　2014/12
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• PLD法によるSnドープGa2O3薄膜の成長と評価;　2014/12
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• Optical properties of ZnTe/ZnMgTe multiple quantum wells for optoelectronic device applications;　2014/11
  ANNOUNCEMENT INFO.;　27th International Microprocesses and Nanotechnology Conference, November 6, 2014, Fukuoka, Japan. 6B-5-4.
  AUTHOR;　T. Tanaka, H. Ohshita, K. Saito, Q. Guo, and M. Nishio
  
• ZnTeO-based intermediate band solar cells using MBE-grown n-type ZnS layers;　2014/11
  ANNOUNCEMENT INFO.;　6th World Conferenceon Photovoltaic Energy Conversion (WCPEC-6), November 25, 2014, 1TuO.7.3.
  AUTHOR;　Tooru Tanaka, Shin Haraguchi, Kosuke Mizoguchi, Toshiki Terasawa, Katsuhiko Saito, Qixin Guo, Mitsuhiro Nishio, Kin M. Yu and Wladek Walukiewicz
  
• n型ZnS窓層を用いたZnTe太陽電池の作製とアニール効果;　2014/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• ITO透明電極を用いたZnTe緑色LEDの作製と評価;　2014/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• 有機金属気相成長法によるZn1-xMgxSeyTe1-y薄膜の成長とMg組成の制御;　2014/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• スパッタリング法によるYSZ基板上のInGaN薄膜成長;　2014/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• MOVPE法によるm-planeサファイア基板上へのZnTeヘテロエピタキシャル成長の基板温度依存性;　2014/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• ZnTe基板上へのZnCdTeO薄膜のMBE成長と評価;　2014/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• n-ZnS窓層を用いたZnTeO中間バンド型太陽電池の特性評価;　2014/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• Intermediate band solar cells based on ZnTeO epilayer with n-ZnS blocking layer;　2014/09
  ANNOUNCEMENT INFO.;　18th International Conference on Molecular Beam Epitaxy, September 11, 2014, Flagstaff, AZ. P110.
  AUTHOR;　Tooru Tanaka, Shin Haraguchi, Kosuke Mizoguchi, Katsuhiko Saito, Qixin Guo, Mitsuhiro Nishio, Kin M. Yu, and Wladek Walukiewicz
  
• Structural and optical properties of (GaIn)2O3 films;　2014/08
  ANNOUNCEMENT INFO.;　IUMRS－ICA2014(International Union of Materials Research Societies- The 15th IUMRS International Conference in Asia), Fukuoka University, Fukuoka City, Japan,C8-028-002,9:20-9:35,August 28,2014 Qixin Guo*
  AUTHOR;　Fabi zhang, Katsuhiko Saito; Tooru, Tanaka; Mitsuhiro Nishio and Qixin Guo*
  
• Effects of DETe transport rate upon some properties of phosphorus-doped Zn1-xMgxTe layers grown by metalorganic vapor phase epitaxy;　2014/07
  ANNOUNCEMENT INFO.;　17th International Conference on Metalorganic Vapor Phase Epitaxy, 14 July, 2014, Lausanne, Switzerland. Thu-Poster-0-84.
  AUTHOR;　Katsuhiko Saito, Mitsuhiro Nishio, Kensuke Urata, Yasuhiro Okamoto, Yasuaki Nakamura, Tooru Tanaka and Qixin Guo
  
• Effects of substrate temperature and doping upon some properties of undoped and phosphorus-doped Zn1-xMgxSeyTe1-y layer grown by metalorganic vapor phase epitaxy;　2014/07
  ANNOUNCEMENT INFO.;　17th International Conference on Metalorganic Vapor Phase Epitaxy, 14 July, 2014, Lausanne, Switzerland. Mon-Poster-0-85.
  AUTHOR;　Mitsuhiro Nishio, Katsuhiko Saito, Kensuke Urata, Yasuhiro Okamoto, Yasuaki Nakamura, Tooru Tanaka and Qixin Guo
  
• INTERMEDIATE BAND SOLAR CELLS BASED ON HIGHLY MISMATCHED ZNTEO ALLOYS;　2014/07
  ANNOUNCEMENT INFO.;　Grand Renewable Energy 2014 (GRE2014) International Conference, July 31, 2014, Tokyo. O-Pv-12-2.
  AUTHOR;　Tooru Tanaka, Shin Haraguchi, Kosuke Mizoguchi, Katsuhiko Saito, Qixin Guo, Mitsuhiro Nishio, Kin Man Yu, and Wladek Walukiewicz
  
• ZnTe基板上へのAlドープZnSe薄膜のMBE成長と太陽電池への応用;　2014/03
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• Molecular Beam Epitaxial Growth of N-Type ZnS Layers for ZnTeO-Based Intermediate Band Solar Cells;　2013/12
  ANNOUNCEMENT INFO.;　2013 Materials Research Society Fall Meeting, December 1-6, 2013, Boston, MA, W5.14
  AUTHOR;　Tooru Tanaka, Shin Haraguchi, Masaki Miyabara, Katsuhiko Saito, Qixin Guo, Mitsuhiro Nishio, Kin M. Yu, Wladek Walukiewicz
  
• n型ZnS窓層を用いたZnTe太陽電池の作製と評価;　2013/11
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• スパッタリング法によるSi基板上へのGaN薄膜成長;　2013/11
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• ZnTe基板上へのAlドープZnSe薄膜のMBE成長と評価;　2013/11
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• 異なるTDMAP供給量でドープされたZnTeエピ膜のフォトルミネッセンス特性;　2013/11
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• MOVPE法によるAl2O3基板上へのZnTeヘテロエピタキシャル成長の基板面方位依存性;　2013/11
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• 有機金属気相成長法により成長されたZnMgSeTe膜の成長特性;　2013/11
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• 有機金属気相成長法により成長されたZnMgSeTe膜の光学特性について;　2013/11
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• 分子線エピタキシー法によるZnTe基板上へのZnMgSeTe四元混晶の成長;　2013/11
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• Growth of n-type ZnS blocking epilayers for ZnTeO-based intermediate band solar cells;　2013/10
  ANNOUNCEMENT INFO.;　23rd Photovoltaic Science and Engineering Conference, October 28-November 1, 2013, Taipei, Taiwan, 4-P-4.
  AUTHOR;　Tooru Tanaka, Shin Haraguchi, Masaki Miyabara, Katsuhiko Saito, Qixin Guo, Mitsuhiro Nishio, Kin M. Yu, and Wladek Walukiewicz
  
• Effect of KCN-Etching on Photovoltaic Properties of Cu2ZnSnSe4 Thin Film Solar Cell;　2013/10
  ANNOUNCEMENT INFO.;　23rd Photovoltaic Science and Engineering Conference, October 28-November 1, 2013, Taipei, Taiwan, 3-P-57.
  AUTHOR;　Satoshi TOKUNAGA, Tooru TANAKA, Katsuhiko SAITO, Qixin GUO, Mitsuhiro NISHIO, Xiuxun HAN
  
• Growth of (GaIn)2O3 film on sapphire substrate by PLD;　2013/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　Fabi Zhang, Qixin Guo, Katsuhiko Saito, Tooru Tanaka, Mitsuhiro Nishio
  
• RFマグネトロンスパッタリング法によるSi基板上のInGaN薄膜成長に関する研究;　2013/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• MOVPE法による(111)GaAs基板上へのZnTe薄膜成長に関する研究;　2013/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• 有機金属気相成長法により作製されたZn1-xMgxSeyTe1-y層の組成と基板温度の関係;　2013/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• Al電極透明化によるZnTe LEDの自己吸収効果の抑制;　2013/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• 有機金属気相成長法によるZnMgSeTe薄膜の成長とSe組成の制御;　2013/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• PLD法によるα-Al2O3(001)基板上へのGa2O3薄膜作製及び評価;　2013/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• n-ZnS/p-ZnTe太陽電池におけるi-ZnS層挿入効果;　2013/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• Growth and Characterization of Zn-MgSeTe Epilayers on ZnTe Substrates by Molecular Beam Epitaxy;　2013/09
  ANNOUNCEMENT INFO.;　The 16th International Conference on II-VI Compounds and Related Materials, Nagahama Royal Hotel, Nagahama, Japan, September 9 - 13, 2013. Tu-P13.
  AUTHOR;　Kosuke Mizoguchi, Yasuhiro Nagao, Tooru Tanaka, Katsuhiko Saito, Qixin Guo, and Mitsuhiro Nishio
  
• Fabrication of ZnO/ZnTe Heterojunction by Using a Room Temperature Direct Bonding Technology;　2013/09
  ANNOUNCEMENT INFO.;　The 16th International Conference on II-VI Compounds and Related Materials, Nagahama Royal Hotel, Nagahama, Japan, September 9 - 13, 2013. We-P10.
  AUTHOR;　Hajime Akiyama, Katsuhiko Saito, Tooru Tanaka, Mitsuhiro Nishio, and Qixin Guo
  
• Growth and Characterization of Zn1-xMgxSeyTe1-y on ZnTe Substrate by Metalorganic Vapor Phase Epitaxy;　2013/09
  ANNOUNCEMENT INFO.;　The 16th International Conference on II-VI Compounds and Related Materials, Nagahama Royal Hotel, Nagahama, Japan, September 9 - 13, 2013. We-P13.
  AUTHOR;　Mitsuhiro Nishio, Katsuhiko Saito, Ryosuke Ito, Kento Tanaka, Kensuke Urata, Yasuaki Nakamura, Tooru Tanaka, and Qixin Guo
  
• Molecular Beam Epitaxy of n-ZnS Epilayers for ZnTe Solar Cell Application;　2013/09
  ANNOUNCEMENT INFO.;　The 16th International Conference on II-VI Compounds and Related Materials, Nagahama Royal Hotel, Nagahama, Japan, September 9 - 13, 2013. We-P15.
  AUTHOR;　Shin Haraguchi, Masaki Miyabara, Tooru Tanaka, Katsuhiko Saito, Qixin Guo, Mitsuhiro Nishio, Kin Man Yu, and Wladek Walukiewicz
  
• Correlation Between Photoluminescence and Carrier Concentration in Phosphorus- doped ZnTe;　2013/09
  ANNOUNCEMENT INFO.;　The 16th International Conference on II-VI Compounds and Related Materials, Nagahama Royal Hotel, Nagahama, Japan, September 9 - 13, 2013. We-P27.
  AUTHOR;　Katsuhiko Saito, Ryosuke Ito, Kento Tanaka, Kensuke Urata, Yasuaki Nakamura, Tooru Tanaka, Qixin Guo, and Mitsuhiro Nishio
  
• Growth of GaInN films on silicon substrates by reactive sputtering;　2013/07
  ANNOUNCEMENT INFO.;　The 12th International Symposium on Sputtering and Plasma Processes, Kyoto Research Park, July 10-12, 2013, TF P1-1.
  AUTHOR;　Q. Guo*, T. Nakao, T. Ushijima, K. Saito, T. Tanaka, M. Nishio
  
• Photogenerated current by two-step photon excitation in ZnTeO Intermediate Band Solar Cells;　2013/06
  ANNOUNCEMENT INFO.;　38th IEEE Photovoltaic Specialists Conference, June 16-21, 2013, Tampa, Florida, 447.
  AUTHOR;　T. Tanaka, M. Miyabara, Y. Nagao, K. Saito, Q. Guo, M. Nishio, K. M. Yu, W. Walukiewicz
  
• ZnTeO系高不整合材料による中間バンド型太陽電池の作製;　2013/05
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• Characterization of ZnTe layers on (0001) ZnO substrates by metalorganic vapor phase epitaxy;　2013/05
  ANNOUNCEMENT INFO.;　The 40th International Symposium on Compound Semiconductors, May 19-23, 2013, Kober Convention Center, Kobe, Japan, MoPC-01-09.
  AUTHOR;　Hajime Akiyama, Tooru Idekoba, Katsuhiko Saito, Tooru Tanaka, Mitsuhiro Nishio, and Qixin Guo*
  
• Growth of Gallium Oxide Films by Pulsed Laser Deposition;　2013/05
  ANNOUNCEMENT INFO.;　The 40th International Symposium on Compound Semiconductors, May 19-23, 2013, Kober Convention Center, Kobe, Japan, MoPC-07-08.
  AUTHOR;　Qixin Guo, Fabi Zhang, Kouji Wakamatsu, Katsuhiko Saito, Tooru Tanaka, and Mitsuhiro Nishio
  
• ZnTe基板上へのZnMgSeTe四元混晶のMBE成長;　2013/03
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• n型ZnSを用いたZnTe太陽電池の作製;　2013/03
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• シンクロトロン光による化合物半導体の評価;　2012/11
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• Photo-electrochemical properties of titanium dioxide thin films prepared by reactive RF sputtering method;　2012/08
  ANNOUNCEMENT INFO.;　The 8th International Forum on Advanced Materials Science and Technology, Fukuoka, Japan, Augest 1-4, 2012, 3A-OS01-10.
  AUTHOR;　M. Arita, Y. Tabata, H. Sakamoto, and Q.X. Guo
  
• Growth of ZnTe layers on (0001) ZnO substrates by metalorganic vapor phase epitaxy;　2012/08
  ANNOUNCEMENT INFO.;　The 8th International Forum on Advanced Materials Science and Technology, Fukuoka, Japan, Augest 1-4, 2012, 3A-OS01-06.
  AUTHOR;　H. Akiyama, H. Hirano, T. Konomi, K. Saito, T. Tanaka, M. Nishio, and Q.X. Guo
  
• Nanocrystallization of Si by High-pressure Torsion;　2012/08
  ANNOUNCEMENT INFO.;　The 8th International Forum on Advanced Materials Science and Technology, Fukuoka, Japan, Augest 1-4, 2012, 2P-PS14.
  AUTHOR;　K. Hayano, Y. Ikoma, K. Edalati, K. Saito, Q. Guo, Z. Horita
  
• Synchrotron-Radiation-Excited UV-VIS Luminescence Experimental Station at Saga University beamline BL13: Design and Installation Progress;　2012/08
  ANNOUNCEMENT INFO.;　The 8th International Forum on Advanced Materials Science and Technology, Fukuoka, Japan, Augest 1-4, 2012, 2P-PS20.
  AUTHOR;　K. Saito, T. Tanaka, M. Nishio, Q. Guo
  
• Development of ZnTe-based Solar Cells;　2012/08
  ANNOUNCEMENT INFO.;　The 8th International Forum on Advanced Materials Science and Technology, Fukuoka, Japan, Augest 1-4, 2012, 2P-PS28.
  AUTHOR;　M. Miyabara, T. Tanaka, K. Saito, Q. Guo, M. Nishio, K. M. Yu, W. Walukiewicz
  
• Effects of Annealing Treatment upon Electrical and Photoluminescence Properties of Phosphorus-Doped ZnMgTe Epilayers Grown by Metaloroganic Vapor Phase Epitaxy;　2012/05
  ANNOUNCEMENT INFO.;　The Sixteenth International Conference on Metal Organic Vapor Phase Epitaxy, May 20~25, 2012, Paradise Hotel Busan, Busan, Korea, ThB1-4.
  AUTHOR;　Mitsuhiro Nishio, Keita Kai, Ryota Fujiki, Katsuhiko Saito, Tooru Tanaka, and Qixin Guo
  
• Characterization of ZnTe Epilayers on GaAs (111) Substrates by Metalorganic Vapor Phase Epitaxy;　2012/05
  ANNOUNCEMENT INFO.;　The Sixteenth International Conference on Metal Organic Vapor Phase Epitaxy, May 20~25, 2012, Paradise Hotel Busan, Busan, Korea, TuP-59.
  AUTHOR;　Qixin Guo, Hajime Akiyama, Hiroyuki Hirano, Katsuhiko Saito, Tooru Tanaka, and Mitsuhiro Nishio
  
• Influence of (MeCp)2Mg Transport Rate upon Growth of Phosphorus-Doped ZnMgTe Layers by MOVPE.;　2012/05
  ANNOUNCEMENT INFO.;　The Sixteenth International Conference on Metal Organic Vapor Phase Epitaxy, May 20~25, 2012, Paradise Hotel Busan, Busan, Korea, TuP-62.
  AUTHOR;　Katsuhiko Saito, Keita Sekioka, Tooru Tanaka, Qixin Guo, and Mitsuhiro Nishio
  
• Surface Morphologies and Photoluminescence Properties of Undoped and P-doped ZnTe Layers Grown by Metaloroganic Vapor Phase Epitaxy.;　2012/05
  ANNOUNCEMENT INFO.;　The Sixteenth International Conference on Metal Organic Vapor Phase Epitaxy, May 20~25, 2012, Paradise Hotel Busan, Busan, Korea, TuP-63.
  AUTHOR;　Mitsuhiro Nishio, Yuji Hayashida, Katsuhiko Saito, Tooru Tanaka,and Qixin Guo
  
• Epitaxial growth of ZnTe layers on (111) GaAs substrates;　2012/04
  ANNOUNCEMENT INFO.;　大阪大学レーザー研シンポジウム2012－平成23年度共同研究成果報告会－ 2012年4月18日、No. 39, 大阪大学銀杏会館
  AUTHOR;　
  
• 仮想化技術を用いたＩＴ技術者育成のためのサーバ実習環境の評価と教育実践;　2011/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• Fundamental properties of sputtered InGaN films;　2011/07
  ANNOUNCEMENT INFO.;　The Eleventh International Symposium on Sputtering & Plasma Processes, Kyoto Research Park, July 6-8, 20011, Kyoto, Japan. TF P1-20.
  AUTHOR;　Q. X. Guo, H. Senda, K. Saito, T. Tanaka, M. Nishio, J. Ding, T. Fan, and D. Zhang
  
• Electronic Structure of II (Zn, Mg, Be)-VI (O, S) Wide-Gap Compound Semiconductor Alloys;　2011/07
  ANNOUNCEMENT INFO.;　International Conference on Electrical Engineering 2011, 10 to 14 July 2011, Hong Kong, A162,11 July.
  AUTHOR;　A. Yoshida, A. Wakahara, and Qixin Guo
  
• Low-temperature buffer layer effects on the quality of ZnTe layers;　2011/05
  ANNOUNCEMENT INFO.;　大阪大学レーザー研シンポジウム2011－平成22年度共同研究成果報告会－ 2011年5月11日、No. 25, 大阪大学コンベンションセンター
  AUTHOR;　Q.X. Guo, K. Saito, T. Tanaka, M. Nishio, M. Tani, and M. Hangyo
  
• Estimation of donor and acceptor levels in Al-doped ZnTe from photominescence measurement;　2010/09
  ANNOUNCEMENT INFO.;　7th International conference on Thin Film Physics and Applications, Sep. 24-27, Shanghia, China, P-6.
  AUTHOR;　K. Saito, T. Saeki, X. Han, T. Tanaka, Q. Guo, and M. Nishio
  
• Estimation of in-plane profiles in thickness and composition for ZnMgTe layers by optical methods;　2010/09
  ANNOUNCEMENT INFO.;　7th International conference on Thin Film Physics and Applications, Sep. 24-27, Shanghia, China, P-7.
  AUTHOR;　K. Saito, K. Sekioka, T. Tanaka, Q. Guo, and M. Nishio
  
• Effects of Total Flow Rate on ZnTe Growth on GaAs Substrate by Metalorganic Vapor Phase Epitaxy;　2010/08
  ANNOUNCEMENT INFO.;　The 16th International Conference on Crystal Growth, 8-13 August, 2010, Beijing, PA158.
  AUTHOR;　Qixin Guo, Masaki Nada, Yaliu Ding, Katsuhiko Saito, Tooru Tanaka, Mitsuhiro Nishio
  
• Temperature Dependence of Electrical Properties from P-Doped ZnMgTe Bulk Crystals Grown by Bridgman Method;　2010/08
  ANNOUNCEMENT INFO.;　The 16th International Conference on Crystal Growth, 8-13 August, 2010, Beijing, PB57.
  AUTHOR;　Mitsuhiro Nishio, Kyosuke Hiwatashi, Keita Kai, Katsuhiko Saito, Tooru Tanaka, Qixin Guo
  
• Effects of substrate temperature upon the properties of ZnMgTe layer grown by MOVPE;　2010/08
  ANNOUNCEMENT INFO.;　The 18th International Vacuum Congress, August 23-27, 2010, Beijing, China, P3-Tf2-11
  AUTHOR;　K. Saito, Y. inoue, Y. Hayashida, T. Tanaka, Q.X. Guo, M. Nishio
  
• Effect of VI/II ratio upon photoluminescence and electrical properties of phosphorus-doped ZnTe films grown by MOVPE;　2010/08
  ANNOUNCEMENT INFO.;　The 18th International Vacuum Congress, August 23-27, 2010, Beijing, China, P3-TF2-12
  AUTHOR;　M. Nishio, K. Saito, T. Tanaka, Q. Guo
  
• Low-temperature growth of InGaN films by reactive sputtering;　2010/06
  ANNOUNCEMENT INFO.;　The 37th International Symposium on Compound Semiconductors, May 31-June 4, 2010, Takamatsu, Japan. FrP70.
  AUTHOR;　Q.X. Guo, Y. Kusunoki, Y. Ding, K. Saito, T. Tanaka, and M. Nishio
  
• Improvement of Crystal Quality of ZnTe Epilayers on Sapphire Substrates;　2010/04
  ANNOUNCEMENT INFO.;　
  AUTHOR;　 Q.X. Guo, Y. Kadoguchi, Y. Ding, T. Tanaka, M. Nishio, M. Tani, and M. Hangyo
  
• Buffer Layer Effects on Properties of ZnTe for Terahertz Device Application;　2009/09
  ANNOUNCEMENT INFO.;　The 8th Pacific Rim Conference on Lasers and Electro-Optics, August 30 - September 3rd, 2009, Shanghai, China, TuP7-01
  AUTHOR;　Qixin Guo, Yuki Nakao, Yoshiki Kadoguchi, Yaliu Ding, Tooru Tanaka, Mitsuhiro Nishio, Masahiko Tani, Masanori Hangyo
  
• Photoelectron spectroscopic study on electronic structure of butterfly-templated ZnO;　2009/08
  ANNOUNCEMENT INFO.;　The 14th International Conference on II-VI compounds, August 23-28, 2009, St.Petersburg, Russia, Tu6p-27.
  AUTHOR;　Masao Kamada, Harue Sugiyama, Kazutoshi Takahashi, Qixin Guo, Jiajun Gu, Wang Zhang, Tongxiang Fan, and Di Zhang
  
• Influence of low-temperature buffer layer on properties of ZnTe grown on GaAs substrates;　2009/08
  ANNOUNCEMENT INFO.;　The 14th International Conference on II-VI compounds, August 23-28, 2009, St.Petersburg, Russia, Th5p-21.
  AUTHOR;　Q.X. Guo, K. Saito, Y. Sueyasu, Y. Ding, T. Tanaka, and M. Nishio
  
• Temperature dependence of photoluminescence from P-doped ZnMgTe bulk crystals of high quality grown by Bridgman method;　2009/08
  ANNOUNCEMENT INFO.;　The 14th International Conference on II-VI compounds, August 23-28, 2009, St.Petersburg, Russia, Th5p-22
  AUTHOR;　K. Saito, S. Shimao, T. Tanaka, Q.X. Guo, and M. Nishio
  
• Growth of low-resistivity p-type ZnMgTe layers by MOVPE;　2009/08
  ANNOUNCEMENT INFO.;　The 14th International Conference on II-VI compounds, August 23-28, 2009, St.Petersburg, Russia,Th5p-23
  AUTHOR;　K. Saito, N. Nonaka, Y. Inoue, T. Tanaka, Q.X. Guo, and M. Nishio
  
• Growth of InGaN films by reactive sputtering;　2009/07
  ANNOUNCEMENT INFO.;　The 10th International Symposium on Sputtering and Plasma Processes, Kanazawa, July 8-10, 2009, TF P1-27.
  AUTHOR;　Q. Guo, M. Ogata, Y. Ding, T. Tanaka, M. Nishio
  
• Characterization of Cu2ZnSnS4 thin film fabricated by co-evaporation;　2009/07
  ANNOUNCEMENT INFO.;　The 10th International Symposium on Sputtering and Plasma Processes, Kanazawa, July 8-10, 2009, TF P2-4.
  AUTHOR;　A. Yoshida, T. Tanaka, M. Nishio, K. Saito, Q. Guo, T. Yamaguchi,
  
• Effects of growth parameters on surface roughness of RF magnetron sputtered Al films;　2009/07
  ANNOUNCEMENT INFO.;　The 10th International Symposium on Sputtering and Plasma Processes, Kanazawa, July 8-10, 2009, TF P3-11.
  AUTHOR;　Q. Guo, Y. Matsushima, Y. Ding, T. Tanaka, M. Nishio,
  
• Growth and Characterization of ZnTe Epilayers on Sapphire Substrate;　2009/04
  ANNOUNCEMENT INFO.;　大阪大学レーザー研シンポジウム２００９－平成20年度共同研究成果報告会ー 平成21年4月23日ー24日、大阪大学
  AUTHOR;　Q.X. Guo, Y. Nakao, Y. Ding, T. Tanaka, M. Nishio, M. Tani, and M. Hangyo
  
• 多源蒸着法によるCu2ZnSnSe4薄膜の作製と評価;　2009/04
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• Al熱拡散法によるZnTe緑色LEDの作製と評価;　2009/03
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• ブリッジマン法で作製した高品質PドープZnMgTe結晶のフォトルミネッセンス特性;　2008/11
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• MOVPE法によるサファイア基板上のZnTeエピタキシャル成長膜の構造特性;　2008/11
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• RFスパッタリング法によるInN薄膜成長に関する研究 ;;　2008/11
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• Pドープ Zn1-xMgxTeエピタキシャル膜の電気的光学的性質に及ぼすアニーリング効果;　2008/11
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• MOVPE法によるGaAs基板上ZnTeエピタキシャル膜の作製と評価;　2008/11
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• サファイア基板上ZnTeエピタキシャル成長膜のアニール効果;　2008/11
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• 陽極酸化ポーラスアルミナを用いたナノ構造作製に関する研究;　2008/11
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• シンクロトロン光によるPTFE微細加工;　2008/11
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• Current Statues of High-Level Engineering Education in Japanese National Universities (Invited);　2008/10
  ANNOUNCEMENT INFO.;　International Forum on New Technology, New Ideology – Innovation of High-Level Applied Talents Cultivation Model, Shanghai, October 5-6, 2008, Mo-L-7.
  AUTHOR;　Qixin GUO
  
• Optical Properties of ZnTe Grown on Sapphire Substrates;　2008/10
  ANNOUNCEMENT INFO.;　The 4th Vacuum and Surface Sciences Conference of Asia and Australia, Matsue, October 28-31, 2008, 30C09.
  AUTHOR;　Qixin GUO, Yuki NAKAO, Yaliu DING, Tooru TANAKA, Mitsuhiro NISHIO
  
• Influence of precursor transport rate upon the optical and electrical properties of P-ZnTe homoepilayer grown by MOVPE system;　2008/10
  ANNOUNCEMENT INFO.;　The 4th Vacuum and Surface Sciences Conference of Asia and Australia, Matsue, October 28-31, 2008, 28P001.
  AUTHOR;　Xiuxun Han,Yuuki Kuramitsu,Tooru Tanaka, Qixin Guo, Mitsushiro Nishio
  
• Epitaxial Growth and Characterization of AlInN Layers for Multi-Junction Tandem Solar Cells (Invited);　2008/09
  ANNOUNCEMENT INFO.;　The 10th China Solar Photovoltaic Conference & Exhibition, Changzhou, September 19-22, 2008, F4-31.
  AUTHOR;　Qixin Guo, Yaliu Ding, Tooru Tanaka, and Mitsuhiro Nishio
  
• Al酸化膜を用いたAl熱拡散法によるZnTe-LEDの作製;　2008/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• 多源蒸着法によるCu2ZnSnS4薄膜の作製と太陽電池の試作;　2008/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• 有機金属気相成長法によるZn1-xMgxTeへのドーピング;　2008/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• Heteroepitaxial growth of InN thin films on (111) silicon substrates;　2008/07
  ANNOUNCEMENT INFO.;　Second International Symposium on Growth of III-Nitrides, Izu, July 6-9, 2008. Mo-6.
  AUTHOR;　Qixin GUO, Masahiko OGATA, Keisukei TAIRA, Tooru TANAKA, Mitsuhiro NISHIO, and Hiroshi OGAWA
  
• Optical Properties of ZnTe epilayers on GaAs substrate by metalorganic vapor phase epitaxy;　2008/05
  ANNOUNCEMENT INFO.;　The 4th Asian Conference on Crystal Growth and Crystal Technology, Sendai, May 21-24, 2008. 23FriPM2II-8-40.
  AUTHOR;　Qixin Guo, Yusuke Kume, Tooru Tanaka, Mitsuhiro Nishio, and Hiroshi Ogawa
  
• EFFECT OF COMPOSITIONAL RATIO ON PROPERTIES OF CU2ZNSNS4 THIN FILM FABRICATED BY CO-EVAPORATION;　2007/12
  ANNOUNCEMENT INFO.;　The 17th International Photovoltaic Science and Engineering Conference, Fukuoka, December 3-7, 2007. 5P-P3-29.
  AUTHOR;　T. Tnaka, K. Ikari, M. Nishio, Q. Guo and H. Ogawa
  
• FUNDAMENTAL PROPERTIES OF EPITAXIAL ALINN SEMICONDUCTORS;　2007/12
  ANNOUNCEMENT INFO.;　The 17th International Photovoltaic Science and Engineering Conference, Fukuoka, December 3-7, 2007. 5P-P4-13.
  AUTHOR;　Q.X. Guo, T. Tanaka, M. Nishio, and H. Ogawa
  
• Prospective applications of the large area, high density and periodic structure (Invited);　2007/12
  ANNOUNCEMENT INFO.;　Workshop on Synchrotron Radiation and Nano-materials, December 18, 2007, Shanghai China. K-1.
  AUTHOR;　Qixin Guo
  
• Microfabrication of ZnO on PTFE template patterned by synchrotron radiation;　2007/09
  ANNOUNCEMENT INFO.;　The 13th International Conference on II-VI compounds, Jeju, Korea, September 10-14, 2007, Tu-P-128
  AUTHOR;　Q.X. Guo, Y. Mitsuishi, T. Tanaka, M. Nishio, H. Ogawa, and Y.Z. Huang
  
• Surface morphology of ZnTe:P(100) homoepitaxially grown by horizontal MOVPE technique;　2007/09
  ANNOUNCEMENT INFO.;　The 6th International Conference on Thin Film Physics and Application, Shanghai, September 25-28, 2007. P2-2.
  AUTHOR;　K. Yamaguchi, Y. Kuramitsu, K. Saito, T. Tanaka, M. Nishio, Q. Guo, and H. Ogawa
  
• Temperature dependence of optical properties on Al0.25In0.75N thin film;　2007/09
  ANNOUNCEMENT INFO.;　The 6th International Conference on Thin Film Physics and Application, Shanghai, September 25-28, 2007. P1-12.
  AUTHOR;　L.F. Jiang, W.Z. Shen, H. Ogawa, and Q.X. Guo
  
• Heteroepitaxial growth of ZnTe thin films on sapphire substrates for terahertz devices applications;　2007/09
  ANNOUNCEMENT INFO.;　The 6th International Conference on Thin Film Physics and Application, Shanghai, September 25-28, 2007. P3-5.
  AUTHOR;　Q.X. Guo, Y. Kume, T. Tanaka, M. Nishio, and H. Ogawa
  
• Epitaxial growth of InN on (111) silicon substrates;　2007/07
  ANNOUNCEMENT INFO.;　The International Conference on Electrical Engineering 2007, HongKong, July 8-12, 2007, ICEE-080.
  AUTHOR;　Qixin GUO, Keisukei TAIRA, Tooru TANAKA, Mitsuhiro NISHIO, and Hiroshi OGAWA
  
• Epitaxial growth of ZnMgTe with a wide composition range on ZnTe substrate by molecular beam epitaxy;　2007/07
  ANNOUNCEMENT INFO.;　17th International Vacuum Congress, 13th International Conference on Surface Science, and International Conference on Nano Science and Technology, Stockholm, July 2-6, 2007, EMPP2-97.
  AUTHOR;　Tanaka, Tooru; Saito, Katsuhiko; Nishio, Mitsuhiro; Guo, Qixin; Ogawa, Hiroshi
  
• Improvement of MOVPE grown ZnTe:P layers by annealing treatment;　2007/07
  ANNOUNCEMENT INFO.;　17th International Vacuum Congress, 13th International Conference on Surface Science, and International Conference on Nano Science and Technology, Stockholm, July 2-6, 2007, EMPP2-99.
  AUTHOR;　Saito, Katsuhiko; Fujimoto, Kenji; Yamaguchi, Kouji; Tanaka, Tooru; Nishio, Mitsuhiro; Guo, Qixin; Ogawa, Hiroshi
  
• Growth of undoped ZnMgTe layers by metalorganic vapour phase epitaxy;　2007/07
  ANNOUNCEMENT INFO.;　17th International Vacuum Congress, 13th International Conference on Surface Science, and International Conference on Nano Science and Technology, Stockholm, July 2-6, 2007, EMPP2-123.
  AUTHOR;　Saito, Katsuhiko; Kouno, Daisuke; Tanaka, Tooru; Nishio, Mitsuhiro; Guo, Qixin; Ogawa, Hiroshi
  
• Epitaxial Growth of Ternary AlInN on Sapphire Substrates;　2007/06
  ANNOUNCEMENT INFO.;　2007 International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies,Nagano,June 19-22, 2007, P1-20.
  AUTHOR;　Q.X. Guo, T. Tanaka, M. Nishio, and H. Ogawa
  
• Nanofabrication of PTFE films by synchrotron radiation;　2007/06
  ANNOUNCEMENT INFO.;　2007 International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies,Nagano,June 19-22, 2007, P1-41.
  AUTHOR;　
  Q.X. Guo, T. Kugino, Y. Mitsuishi, T. Tanaka, M. Nishio, and H. Ogawa
  
• SAGA Light Sourceの現状及びシンクロトロン光を用いたプロセス技術;　2007/04
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• FABRICATION OF MICRO-ARRAY OF ZINC OXIDE SEMICONDUCTORS;　2007/01
  ANNOUNCEMENT INFO.;　International Conference on Integration and Commercialization of Micro and Nano-systems, January 10-13, 2007, Sanya, Hainan, China, MNC2007-21010
  AUTHOR;　Q.X. Guo, N. Uesugi, Y. Kume, Y. Mitsuishi, T. Tanaka, M. Nishio, H. Ogawa, A.Yoshida, and Y.Z. Huang
  
• Electronic Band Structures and Transport Properties of Wurtzite Indium Nitride Grown by Metal-Organic Vapor Phase Epitaxy;　2006
  ANNOUNCEMENT INFO.;　13th International Conference on Metal Organic Vapor Phase Epitaxy, Miyazaki, May 22-26, 2006, Tu-P.12.
  AUTHOR;　W.Z. Shen, Z.W. Jia, J. Chen, H.B. Ye, H. Ogawa, and Q.X. Guo
  
• Low-pressure metalorganic vapor phase epitaxy growth of ZnTe;　2006
  ANNOUNCEMENT INFO.;　13th International Conference on Metal Organic Vapor Phase Epitaxy, Miyazaki, May 22-26, 2006, Tu-P.39.
  AUTHOR;　Q. Guo, Y. Kume, T. Tanaka, M. Nishio, H. Ogawa, and W. Shen
  
• Growth and Characterization of ZnTe epilayers on GaAs substrate by metalorganic vapor phase epitaxy;　2006
  ANNOUNCEMENT INFO.;　13th International Conference on Metal Organic Vapor Phase Epitaxy, Miyazaki, May 22-26, 2006, Tu-P.40.
  AUTHOR;　Y. Kume, Q. Guo, T. Tanaka, M. Nishio, and H. Ogawa
  
• Growth Characteristics of ZnMgTe Layer on ZnTe Substrate by Metalorganic Vapor Phase Epitaxy;　2006
  ANNOUNCEMENT INFO.;　13th International Conference on Metal Organic Vapor Phase Epitaxy, Miyazaki, May 22-26, 2006, Tu-P.41.
  AUTHOR;　K. Saito, T. Yamashita, D. Kouno, T. Tanaka, M. Nishio, Q. Guo, and H. Ogawa
  
• Effects of dopant transport rate upon photoluminescence and electrical properties of ZnTe in atmospheric pressure MOVPE using trisdimethlaminophosphorus;　2006
  ANNOUNCEMENT INFO.;　13th International Conference on Metal Organic Vapor Phase Epitaxy, Miyazaki, May 22-26, 2006, We-B2.1
  AUTHOR;　T. Tanaka, M. Nishio, K. Hayashida, K. Fujimoto, Q. Guo, and H. Ogawa
  
• Growth and Characterization of AlInN Films;　2006
  ANNOUNCEMENT INFO.;　First International Symposium on Growth of III-Nitride, June 4 - 7, 2006, Linköping, Sweden, WeP-09.
  AUTHOR;　Q.X. Guo, Y. Okazaki, Y. Kume, T. Tanaka, M. Nishio, and H. Ogawa
  
• Fabrication of ZnTe Epilayers for Terahertz Devices Applications;　2006
  ANNOUNCEMENT INFO.;　2006 Joint 31st International Conference on Infrared and Millimeter Waves and 14th International Conference on Terahertz Electronics, September 18-22, 2006, Shanghai, WedP-42
  AUTHOR;　Q.X. Guo, Y. Kume, Y. Fukuhara, T. Tanaka, M. Nishio, H. Ogawa, M. Hiratsuka, M. Tani, and M. Hangyo,
  
• Fabrication of Zinc Oxide Microstructures Using Synchrotron Light;　2006
  ANNOUNCEMENT INFO.;　The 7th Japan-Korea Joint Workshop on Advanced Semiconductor Processes and Equipments, November 15-17, 2006, Nara, P14
  AUTHOR;　Q.X. Guo, N. Uesugi, Y. Kume, Y. Mitsuishi, T. Tanaka, M. Nishio, H. Ogawa, A. Yoshida, Y. Huang,
  
• Synchrotron Light Applications for Characterization of New Materials (Invited Plenary Talk);　2006
  ANNOUNCEMENT INFO.;　OPCM (Optical Properties on Condensed Materials 2006), August 4-9, 2006, Xiamen
  AUTHOR;　Qixin GUO
  
• Fabrication of stannite Cu2ZnSnS4 thin films by physical vapor deposition,;　2006
  ANNOUNCEMENT INFO.;　15th International Conference on Ternary and Multinary Compounds, Kyoto, March 6-10, 2006, Tue-P-28B.
  AUTHOR;　Tooru Tanaka, Daisuke Kawasaki, Mitsuhiro Nishio, Qixin Guo and Hiroshi Ogawa
  
• Optical and Electrical Properties of Phosphorus-Doped ZnMgTe Bulk Crystals Grown by Bridgman Method,;　2006
  ANNOUNCEMENT INFO.;　15th International Conference on Ternary and Multinary Compounds, Kyoto, March 6-10, 2006, Wed-P-15B.
  AUTHOR;　Katsuhiko Saito, G.enkon So, Tooru Tanaka, Mitsuhiro Nishio, Qixin Guo and Hiroshi Ogawa
  
• Design of Beamline BL9 at Saga Light Source,;　2006
  ANNOUNCEMENT INFO.;　9th International Conference on Synchrotron Radiation Instrumentation, Daegu, Korea, May 28 – June 2, 2006, DP-37.
  AUTHOR;　Tooru Tanaka, Hiroshi Ogawa, Masao Kamada, Mitsuhiro Nishio, Masataka Masuda, Qixin Guo, Kazuki Hayashida, Yuzi Kondo, Teruaki Motooka, Daisuke Yoshimura, Hiroyuki Setoyama, and Toshihiro Okajima,
  
• Characterization of Al-doped ZnTe layer fabricated by Al thermal diffusion,;　2006
  ANNOUNCEMENT INFO.;　International Conference on Nanoscience and Technology 2006, Basel, July 30, 2006 – August 04, 2006.
  AUTHOR;　Tooru Tanaka, Qixin Guo, Mitsuhiro Nishio, and Hiroshi Ogawa,
  
• SIMS study of Al thermal diffusion in ZnTe,;　2006
  ANNOUNCEMENT INFO.;　2006 E-MRS Fall Meeting, Warsaw, September 4-8, 2006.
  AUTHOR;　Tooru Tanaka, Norihiro Murata, Katsuhiko Saito, Qixin Guo, Mitsuhiro Nishio, and Hiroshi Ogawa,
  
• Post-annealing effect upon phosphorus-doped ZnTe homoepitaxial layers grown by MOVPE,;　2006
  ANNOUNCEMENT INFO.;　2006 E-MRS Fall Meeting, Warsaw, September 4-8, 2006.
  AUTHOR;　Katsuhiko Saito, Kenji Fujimoto, Kouji Yamaguchi, Tooru Tanaka, Mitsuhiro Nishio, Qixin Guo, Hiroshi Ogawa,
  
• Influence of surface treatment on properties of ZnTe LED fabricated by Al thermal diffusion;　2006
  ANNOUNCEMENT INFO.;　The 7th Japan-Korea Joint Workshop on Advanced Semiconductor Processes and Equipments, November 15-17, 2006, Nara, P24
  AUTHOR;　TOORU TANAKA, KATSUHIKO SAITO, MITSUHIRO NISHIO, QIXIN GUO, AND HIROSHI OGAWA
  
• Optical Properties of Anodic Nanochannel Alumina;　2005
  ANNOUNCEMENT INFO.;　15th International Conference on Dynamical Processes in Exited States of Solids Shanghai, August 3, 2005
  AUTHOR;　Q.X. Guo, Y. Hachiya, T. Tanaka, M. Nishio, and H. Ogawa
  
• Growth of AlInN films for multi-junction tandem solar cells;　2005
  ANNOUNCEMENT INFO.;　The 15th International Photovoltaic Science and Engineering Conference and Solar Energy Exhibition Shanghai, October 13, 2005
  AUTHOR;　Q.X. Guo, Y. Okazaki, Y. Kume, T. Tanaka, M. Nishio, and H. Ogawa
  
• Effect of surface treatment on properties of ZnTe LED fabricated by Al thermal diffusion,;　2005
  ANNOUNCEMENT INFO.;　11th International Conference on II-VI Compounds, Warsaw, September 12-16, 2005.
  AUTHOR;　Tooru Tanaka, Kazuki Hayashida, Katsuhiko Saito, Mitsuhiro Nishio, Qixin Guo, and Hiroshi Ogawa,
  
• Effects of substrate temperature upon photoluminescence and electrical properties of ZnTe in atmospheric pressure MOVPE using tris-dimethlaminophosphorus,;　2005
  ANNOUNCEMENT INFO.;　11th International Conference on II-VI Compounds, Warsaw, September 12-16, 2005.
  AUTHOR;　Kazuki Hayashida, Tooru Tanaka, Mitsuhiro Nishio, Qixin Guo, T. Tanigawa, and Hiroshi Ogawa,
  
• Phosphorus-Doped ZnMgTe Bulk Crystals Grown by Vertical Bridgman Method,;　2005
  ANNOUNCEMENT INFO.;　11th International Conference on II-VI Compounds, Warsaw, September 12-16, 2005.
  AUTHOR;　Katsuhiko Saito, Keisuke Kinoshita, Tooru Tanaka, Mitsuhiro Nishio, Qixin Guo, and Hiroshi Ogawa,
  
• Growth of Boron-Doped ZnTe Homoepitaxial Layer by Metalorganic Vapor Phase Epitaxy,;　2005
  ANNOUNCEMENT INFO.;　11th International Conference on II-VI Compounds, Warsaw, September 12-16, 2005.
  AUTHOR;　Katsuhiko Saito, Tetsuo Yamashita, Tooru Tanaka, Mitsuhiro Nishio, Qixin Guo, and Hiroshi Ogawa,
  
• Epitaxial growth properties of AlN films on sapphire substrates by reactive sputtering;　2005
  ANNOUNCEMENT INFO.;　THE EIGHTH INTERNATIONAL SYMPOSIUM ON　SPUTTERING & PLASMA PROCESSES Kanazawa, June 8, 2005
  AUTHOR;　Q.X. Guo, T. Tanaka, M. Nishio, and H. Ogawa
  
• Specific Contact Resistance of Pd Electroless to p-type ZnTe;　2004
  ANNOUNCEMENT INFO.;　International Conference on Electrical Engineering　2004, Sapporo
  AUTHOR;　Mitsuhiro Nishio, Tooru Tanaka, Qixin Guo, Hiroshi Ogawa
  
• Extended X-ray absorption fine structure study of Al-doped ZnTe;　2004
  ANNOUNCEMENT INFO.;　4th Conference on Synchrotron Radiation in Materials Science Grenoble, August 23, 2004.
  AUTHOR;　Q.X. Guo , J. Ding, K. Hayashida, T. Tanaka, M. Nishio and H. Ogawa
  
• Synchrotron radiation-excited etching of ZnTe using Ar gas,;　2004
  ANNOUNCEMENT INFO.;　4th Conference on Synchrotron Radiation in Materials Science, Grenoble, August 23-25, 2004, PEM13.
  AUTHOR;　Tooru Tanaka, Yusuke Kume, Kazuki Hayashida, Mitsuhiro Nishio, Qixin Guo, Hiroshi Ogawa,
  
• Preparation of Cu2ZnSnS4 thin films by hybrid sputtering,;　2004
  ANNOUNCEMENT INFO.;　14th International Conference on Ternary and Multinary Compounds, September 27-October 1, 2004, Denver.
  AUTHOR;　Tooru Tanaka, Takeshi Nagatomo, Daisuke Kawasaki, Mitsuhiro Nishio, Qixin Guo, Akihiro Wakahara, Akira Yoshida and Hiroshi Ogawa,
  
• Growth properties of reactive sputtered AlInN films;　2003
  ANNOUNCEMENT INFO.;　5th International Conference on Nitride Semiconductors, Nara, May 25-30, 2003, Mo-P1.029.
  AUTHOR;　Q.X. Guo, K. Yahata, T. Tanaka, M. Nishio and H. Ogawa
  
• Low-temperature epitaxial growth of InN and AlInN;　2003
  ANNOUNCEMENT INFO.;　International Indium Nitride Workshop, Fremantle, Australia, November 19, p74, 2003.
  AUTHOR;　Qixin Guo, Tooru Tanaka, Mitsuhiro Nishio, and Hiroshi Ogawa
  
• Synchrotron Radiation-Excited Etching of ZnTe,;　2003
  ANNOUNCEMENT INFO.;　8th International Conference on Synchrotron Radiation Instrumentation (SRI 2003), San Francisco, August 25-29, 2003, 10.114.
  AUTHOR;　Tooru Tanaka, Yusuke Kume, Sinji Tokunaga, Kazuki Hayashida, Mitsuhiro Nishio, Qixin Guo, and Hiroshi Ogawa,
  
• Depth dependence of photoluminescence spectra of Al thermal diffusion layer in ZnTe LED;　2003
  ANNOUNCEMENT INFO.;　11th International Conference on II-VI Compounds, Niagara Falls, New York, September 22-26, 2003, Th4.11.
  AUTHOR;　Tooru Tanaka, Yusuke Kume, Mitsuhiro Nishio, Qixin Guo, and Hiroshi Ogawa,
  
• Influence of Al thermal diffusion time on electroluminescence properties of ZnTe LED,;　2003
  ANNOUNCEMENT INFO.;　11th International Conference on II-VI Compounds, Niagara Falls, New York, September 22-26, 2003, Th4.10.
  AUTHOR;　Tooru Tanaka, Yusuke Kume, Mitsuhiro Nishio, Qixin Guo, and Hiroshi Ogawa,
  
• Photoluminescence properties of ZnTe homoepitaxial films deposited by photo-excited growth using synchrotron-radiation light,;　2002
  ANNOUNCEMENT INFO.;　Third International Conference on Synchrotron Radiation in Materials Science, Singapore, January 21-24 2002, 2355, p.102.
  AUTHOR;　Tooru Tanaka, Kazuki Hayashida, Shanli Wang, Qixin Guo, Mitsuhiro Nishio, and Hiroshi Ogawa,
  
• Photoluminescence properties of chlorine-doped ZnTe grown by metalorganic vapor phase epitaxy,;　2002
  ANNOUNCEMENT INFO.;　11th International Conference on Metal Organic Vapour Phase Epitaxy, Berlin, June 3-7, 2002, Mon-P22, p.83.
  AUTHOR;　Tooru Tanaka, Kazuki Hayashida, Shanli Wang, Mitsuhiro Nishio, Qixin Guo, and Hiroshi Ogawa,
  
• MOVPE Growth and characterization of high quality ZnTe homoepitaxial layers;　2002
  ANNOUNCEMENT INFO.;　11th International Conference on Metal Organic Vapour Phase Epitaxy, Berlin, June 3-7, 2002, Tue-P16, p.136.
  AUTHOR;　Tooru Tanaka, Kazuki Hayashida, Shanli Wang, Mitsuhiro Nishio, Qixin Guo, and Hiroshi Ogawa,
  
• Cathodoluminescence study of highly ordered InGaAs quantum dots,;　2002
  ANNOUNCEMENT INFO.;　2nd International Conference on Semiconductor Quantum Dots, Tokyo, September 30 - October 3, 2002.
  AUTHOR;　Q. Guo , X. Mei, H. Ogawa, H. Ruda,
  
• Heteroepitaxial Growth of GaN on (111)GaAs Substrates;　2001
  ANNOUNCEMENT INFO.;　13th International Conference on Crystal Growth (ICCG13), Kyoto, July 30-August 4, 2001, 02a-SB2-05
  AUTHOR;　Q.X. Guo, A. Okada, H. Kidera, T. Tanaka, M. Nishio, H. Ogawa
  
• Effect of Gas Flow Rate on Properties of ZnTe Epitaxial Layers Grown by Horizontal Metalorganic Vapor Phase Epitaxy;　2001
  ANNOUNCEMENT INFO.;　13th International Conference on Crystal Growth (ICCG13), Kyoto, July 30-August 4, 2001, 02a-SB3-11
  AUTHOR;　Tooru Tanaka, Kazuki Hayashida, Mitsuhiro Nishio, Yong Chang, Jun Wang, Shanli Wang, Qixin Guo, Hiroshi Ogawa
  
• Growth of Arsenic-Doped ZnTe by MOVPE using Triethylarsine;　2001
  ANNOUNCEMENT INFO.;　13th International Conference on Crystal Growth (ICCG13), Kyoto, July 30-August 4, 2001, 02a-SB3-12
  AUTHOR;　Kazuki Hayashida, Tooru Tanaka, Mitsuhiro Nishio, Yong Chang, Jun Wang, Shanli Wang, Qixin Guo, Hiroshi Ogawa
  
• Investigation into the influence of GaN buffer layer on crystallinity of InN;　2001
  ANNOUNCEMENT INFO.;　13th International Conference on Crystal Growth (ICCG13), Kyoto, July 30-August 4, 2001, 03a-SB2-12
  AUTHOR;　Q.X. Guo, A. Okada, H. Kidera, T. Tanaka, M. Nishio, H. Ogawa
  
• Arsenic and Phosphor P-type Doping of Bulk ZnTe for LED Applications;　2001
  ANNOUNCEMENT INFO.;　28th International Symposium on Compound Semiconductors 2001 (ISCS2001), Tokyo, October 1-4, 2001, MoP-4.
  AUTHOR;　Y. Chang, S.L. Wang, T. Tanaka, K. Hayashida, S. Kanamaru, Q.X. Guo, M.Nishio, H. Ogawa
  
• Photoluminescence properties of iodine-doped ZnTe grown by metalorganic vapor phase epitaxy;　2001
  ANNOUNCEMENT INFO.;　28th International Symposium on Compound Semiconductors 2001 (ISCS2001), Tokyo, October 1-4, 2001, WeP-11
  AUTHOR;　Tooru Tanaka, Kazuki Hayashida, Hiroki Harada, Mitsuhiro Nishio, Shanli Wang, Yong Chang, Qixin Guo, and Hiroshi Ogawa
  
• Epitaxial Growth of GaN on (111)GaAs Substrates,;　2000
  ANNOUNCEMENT INFO.;　The 4th International Conference on THIN FILM PHYSCICS AND APPLICATIONS, Shanghai, May 8-11, 2000, SC-011.
  AUTHOR;　Q.Guo, A.Okada, M.Nishio and H.Ogawa,
  
• Photoluminescence of ZnTe Homoepitaxial Films Deposited by Synchrotron Radiation-Excited Growth (Invited),;　2000
  ANNOUNCEMENT INFO.;　The 4th International Conference on THIN FILM PHYSCICS AND APPLICATIONS, Shanghai, May 8-11, 2000, SC-043
  AUTHOR;　M.Nishio, K.Hayashida, H.Harada, Y.Mitsuishi, Q.Guo and H.Ogawa,
  
• Tungsten Thin Films Deposition on Tool Steel Substrates,;　2000
  ANNOUNCEMENT INFO.;　The 4th International Conference on THIN FILM PHYSCICS AND APPLICATIONS, Shanghai, May 8-11, 2000, ME-15.
  AUTHOR;　Q.Guo, M.Nishio and H.Ogawa,
  
• Reactive Ion Etching of Indium Nitride Thin Films,;　2000
  ANNOUNCEMENT INFO.;　The 4th International Conference on THIN FILM PHYSCICS AND APPLICATIONS, Shanghai, May 8-11, 2000, SC-066.
  AUTHOR;　Q.Guo, N.Matsuse, M.Nishio and H.Ogawa,
  
• Ohmic Contacts to N-type ZnTe Grown by MOVPE,;　2000
  ANNOUNCEMENT INFO.;　The 4th International Conference on THIN FILM PHYSCICS AND APPLICATIONS, Shanghai, May 8-11, 2000, SC-082.
  AUTHOR;　K.Hayashida, M.Nishio, H.Harada, Y.Mitsuishi, Q.Guo and H.Ogawa,
  
• Effects of photo-illumination upon photoluminescence properties of ZnTe in atmospheric pressure MOVPE,;　2000
  ANNOUNCEMENT INFO.;　The Tenth International Conference on Metalorganic Vapor Phase Epitaxy, Sapporo, June 5-9, 2000.
  AUTHOR;　K.Hayashida, M.Nishio, H.Harada, S.Furukawa, Q.Guo and H.Ogawa,
  
• SR-excited growth characteristics of ZnTe homoepitaxial films and their photoluminescence properties,;　2000
  ANNOUNCEMENT INFO.;　7th International Conference on Synchrotron Radiation Instrumentation, Berlin, August 21-25, 2000.
  AUTHOR;　M.Nishio, K.Hayashida, H.Harada, Y.Mitsuishi, Q.Guo and H.Ogawa,
  
• Growth of GaN films on (111)GaAs substrates,;　2000
  ANNOUNCEMENT INFO.;　International workshop on nitride semiconductors, Nagoya, September 25-28, 2000, PTD05.
  AUTHOR;　Q.X.Guo, A.Okada, M.Nishio, and H.Ogawa,
  
• Temperature dependence of AlN reflectance spectra,;　2000
  ANNOUNCEMENT INFO.;　International workshop on nitride semiconductors", Nagoya, September 25-28,2000, PTE38.
  AUTHOR;　Q.X.Guo, A.Okada, M.Nishio, H.Ogawa, K.Fukui, and A. Yoshida,
  
• Reflection spectra of Al1-xGaxN,;　2000
  ANNOUNCEMENT INFO.;　International workshop on nitride semiconductors, Nagoya, September 25-28, 2000, PTE37.
  AUTHOR;　K.Fukui, H.Miura, A.Okada, Q.Guo, S.Tanaka, H.Hirayama, and Y.Aoyagi,
  
• Recent studies on MOVPE growth of ZnTe (Invited),;　2000
  ANNOUNCEMENT INFO.;　Optics and Optoelectronic Inspection and Control: Tchniques, Application, & Inspection, Beijing, November 8-10, 2000.
  AUTHOR;　M. Nishio, K. Hayashida, H. Harada, Y. Mitsuishi, Q. Guo, H. Ogawa,
  
• Recent progress on low-temperature epitaxial growth of nitride semiconductors (Invited),;　2000
  ANNOUNCEMENT INFO.;　Optics and Optoelectronic Inspection and Control: Tchniques, Application, & Inspection, Beijing, November 8-10, 2000.
  AUTHOR;　Q. Guo, M. Nishio, H. Ogawa,
  
• Study on novel non-thermal epitaxial technique of compound semiconductor (Invited),;　2000
  ANNOUNCEMENT INFO.;　INDO-JAPANESE WORKSHOP ON MICRO SYSTEM TECHNOLOGY, Delhi, November 23-25, 2000, I-7.
  AUTHOR;　M.Nishio, K.Hayashida, Q.Guo, H.Ogawa,
  
• Epitaxial Growth of AlInN by RF Magnetron Sputtering,;　2000
  ANNOUNCEMENT INFO.;　The 42nd Annual Meeting of the Division of Plasma Physics and the 10th International congress on Plasma Physics, Quebec, Canada, October 23-27, 2000.
  AUTHOR;　Q.X.Guo, A.Okada, M.Nishio, and H.Ogawa,
  
• Non-thermal epitaxial growth of ZnTe using synchrotron radiation,;　1999
  ANNOUNCEMENT INFO.;　The 1st UK-JAPAN International Seminar of Application of Synchrotron Radiation to Studies of Nano-Structured Materials pp.85-88. March 26-27, 1999, Okazaki
  AUTHOR;　Hiroshi Ogawa, Mitsuhiro Nishio and Qixin Guo,
  
• PHOTOLUMINESCENCE PROPERTIES OF ALUMINUM-DOPED ZnTe LAYERS GROWN BY MOVPE,;　1999
  ANNOUNCEMENT INFO.;　First Vacuum and Surface Sciences Conference of Asia and Australia, ThP-79 September 8-10, 1999, Tokyo
  AUTHOR;　M.Nishio, K.Hayashida, Q.Guo, H.Ogawa,
  
• GROWTH CHARACTERISTICS OF ZnTe IN A VERTICAL MOVPE SYSTEM,;　1999
  ANNOUNCEMENT INFO.;　First Vacuum and Surface Sciences Conference of Asia and Australia, FrP-78, September 8-10, 1999, Tokyo.
  AUTHOR;　M.Nishio, K.Hayashida, Q.Guo, H.Ogawa,
  
• EFFECT OF THE SUBSTRATE PRETREATMENT ON THE EPITAXIAL GROWTH OF INDIUM NITRIDE,;　1999
  ANNOUNCEMENT INFO.;　First Vacuum and Surface Sciences Conference of Asia and Australia, September 8-10, 1999, Tokyo.
  AUTHOR;　Q.X.Guo, A.Okada, M.Nishio, and H.Ogawa,
  
• GROWTH OF InN FILMS ON (111) GaAs SUBSTRATES BY REACTIVE MAGNETRON SUPUTTERING,;　1999
  ANNOUNCEMENT INFO.;　First Vacuum and Surface Sciences Conference of Asia and Australia, September 8-10, 1999, Tokyo.
  AUTHOR;　Q.X.Guo, K.Murata, M.Nishio, and H.Ogawa,
  
• In-EDGE X-RAY ABSORPTION FINE STRUCTURE OF InN AND InGaN FILMS,;　1999
  ANNOUNCEMENT INFO.;　The Third International Cenference on Nitride Semiconductors, Montpellier, France, July 5, 1999.
  AUTHOR;　K.P.O'Donnell, R.W.Martin, M.E.White, J.F.W.Mosselmans, and Q.X.Guo,
  
• Effects of photo-assisted MOVPE upon the doping of aluminum into ZnTe,;　1999
  ANNOUNCEMENT INFO.;　The 9th International Conference on II-VI Compounds, ｐ.41, November 1-5, 1999, Kyoto
  AUTHOR;　K. Hayashida, M. Nishio, H. Harada, S. Furukawa, Q. Guo, and H. Ogawa,
  
• Effect of dopant flow rate upon photoluminescence properties in Aluminum-doped ZnTe layers grown by MOVPE,;　1998
  ANNOUNCEMENT INFO.;　14th International Vacuum Congress, Birmingham, August 31-September 4, 1998, EM.PTh.27.
  AUTHOR;　M.Nishio, Q.X.Guo, and H.Ogawa,
  
• Homoepitaxial growth of ZnTe by synchrotron radiation using metalorganic sources,;　1998
  ANNOUNCEMENT INFO.;　14th International Vacuum Congress, Birmingham, August 31-September 4, 1998, EM.PTh.41.
  AUTHOR;　M.Nishio, T.Enoki, Q.X.Guo, H.Ogawa,
  
• Structural and electrical properties of indium nitride films by RF magnetron sputtering,;　1998
  ANNOUNCEMENT INFO.;　14th International Vacuum Congress, Birmingham, August 31-September 4, 1998, EM.PTh.34.
  AUTHOR;　Q.X.Guo, N.Shingai, M.Nishio, and H.Ogawa,
  
• Ohmic contacts to p-type ZnTe using electroless Pd,;　1998
  ANNOUNCEMENT INFO.;　14th International Vacuum Congress, Birmingham, August 31-September 4, 1998,
  AUTHOR;　M.Nishio, Y.Fujiwara, Q.X.Guo, and H.Ogawa,
  
• Electronic structure of indium nitride,;　1998
  ANNOUNCEMENT INFO.;　The Second International Conference on Synchrotron Radiation in Materials Science, Kobe, November 1-2, 1998.
  AUTHOR;　Q.X.Guo, M.Nishio, H.Ogawa, A.Wakahara, and A.Yoshida,
  
• Low temperature growth of ZnTe homoepitaxial layers by synchrotron radiation using metalorganic sources,;　1998
  ANNOUNCEMENT INFO.;　The Second International Conference on Synchrotron Radiation in Materials Science, Kobe, November 1-2, 1998.
  AUTHOR;　M.Nishio, T.Enoki, Y.Mitsuishi, Q.X.Guo, and H.Ogawa,
  
• Growth of InN films by rf Magnetron Sputtering,;　1997
  ANNOUNCEMENT INFO.;　The Second International Conference on Nitride Semiconductors, October 27-31, 1997,Tokushima,
  AUTHOR;　Q.X.Guo, N.Shingai, M.Nishio, and H.Ogawa,
  
• Optical Spectra of AlN in Vacuum Ultraviolet Region,;　1997
  ANNOUNCEMENT INFO.;　The Second International Conference on Nitride Semiconductors, Tokushima, October 27-31, 1997,
  AUTHOR;　Q.X.Guo, M.Nishio, H.Ogawa, and A.Yoshida,
  
• Optical properties of zinc telluride;　1996
  ANNOUNCEMENT INFO.;　Eight International Conference on Solid Films and Surfaces (Osaka) (1996)
  AUTHOR;　Q.X. Guo, M. Ikijiri, M. Nishio, and H. Ogawa
  
• Optical spectra of InN single crystal in VUV region;　1995
  ANNOUNCEMENT INFO.;　The International Conference on Vacuum Ultraviolet Radiation Physics, (Tokyo) Th65 (1995).
  AUTHOR;　Q.X.Guo, H.Ogawa and A.Yoshida
  
• Epitaxial relationship between AlxIn1-xN layers and (0001)α-Al2O3 substrates;　1995
  ANNOUNCEMENT INFO.;　Topical Workshop on III-V Nitrides (Nagoya) P-30 (1995).
  AUTHOR;　Q.X.Guo, H.Ogawa, N.Itoh and A.Yoshida
  
• Growth and some properties of AlxIn1-xN crystalline thin films;　1994
  ANNOUNCEMENT INFO.;　Second International Conference on Thin Film Physics and Applications. (Shanghai) (1994).
  AUTHOR;　Q.X.Guo, H.Ogawa and A.Yoshida
  
• Growth and some properties of AlxIn1-xN by microwave excited metalorganic vapor phase epitaxy;　1994
  ANNOUNCEMENT INFO.;　The Eighth International Conference on Vapour Growth and Epitaxy, (Germany) (1994).
  AUTHOR;　Q.X.Guo, H.Ogawa and A.Yoshida
  

Other Lectures

• Synchrotron Light Applications for Characterizing Semiconductors;　2010/12
  ANNOUNCEMENT INFO.;　Joint Seminar between State Key Lab of Metal Matrix Composites, Shanghai Jiaotong University and Saga University Synchrotron Light Application Center on Material Science and Synchrotron Light -2010,Shanghai Jiaotong University, China, December 10, 2010
  AUTHOR;　Qixin Guo
  
• 半導体ナノ構造に関する研究;　2010/02
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• Growth of Advanced Materials for Clean Energy Applications;　2009/12
  ANNOUNCEMENT INFO.;　The 5th Joint Seminar between School of Electrical Engineering, Shanghai Dianji University (SDJU) and Optoelectronics Laboratory, Saga University, December 28, 2009, Shanghai, China.
  AUTHOR;　Qixin GUO
  
• Advanced Technologies in Electronics;　2009/09
  ANNOUNCEMENT INFO.;　Guilin University of electronic Technology, Guilin, China, September 7, 2009.
  AUTHOR;　Qixin GUO
  
• Synchrotron Light Applications in Advanced Materials;　2009/09
  ANNOUNCEMENT INFO.;　Guilin University of Technology, Guilin, China, September 8, 2009.
  AUTHOR;　Qixin GUO
  
• Current Status of Researches on Advanced Materials;　2009/09
  ANNOUNCEMENT INFO.;　Kunming University of Science and Technology, September 12, 2009.
  AUTHOR;　Qixin GUO
  
• Synchrotron Light Application for Advanced Functional Materials;　2009/03
  ANNOUNCEMENT INFO.;　The 4th Joint Seminar between School of Electrical Engineering,Shanghai Dianji University (SDJU) andVenture Business Laboratory, Saga University, March 6, 2009, Shanghai, China
  AUTHOR;　Qixin Guo
  
• Applications of Nanostructured Materials for Optoelectronics;　2009/01
  ANNOUNCEMENT INFO.;　Shanghai Normal University, Jan. 3, 2009
  AUTHOR;　Qixin GUO
  
• Synchrotron Light Application for Functional Materials;　2008/12
  ANNOUNCEMENT INFO.;　Shanghai Normal University, December 30, 2008
  AUTHOR;　Qixin GUO
  
• Research Activities on Multi-Junction Tandem Solar Cells in Saga University;　2008/10
  ANNOUNCEMENT INFO.;　The 3rd Joint Seminar between School of Electrical Engineering,Shanghai Dianji University and Venture Business Laboratory, Saga University, October 8, 2008, Shanghai
  AUTHOR;　Qixin GUO
  
• Low-temperature growth of advanced materials in nanoelectronics and bioelectronics;　2008/10
  ANNOUNCEMENT INFO.;　Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Science, October 9, 2008, Suzhou, China.
  AUTHOR;　Qixin GUO
  
• Growth and Characterization of Compound Semiconductors;　2008/09
  ANNOUNCEMENT INFO.;　Shanghai Normal University, September 18, 2008. Shanghai.
  AUTHOR;　Qixin GUO
  
• Fabrication and Characterization of Advanced Nanostructured Materials;　2008/06
  ANNOUNCEMENT INFO.;　 Chemical Engineering School of Chemical Engineering, Dalian University of Technology, June 27, 2008.
  AUTHOR;　Qixin GUO
  
• Fabrication and Characterization of Advanced Nanostructured Materials;　2008/06
  ANNOUNCEMENT INFO.;　State Key Laboratory of Materials Modification, Dalian University of Technology, June 26, 2008.
  AUTHOR;　Qixin GUO
  
• ZnTeエピ膜を利用した広帯域THｚ放射素子の研究開発;　2008/04
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• Prospective Applications of Synchrotron Light in Integrated Microelectronics;　2008/03
  ANNOUNCEMENT INFO.;　The 2nd Joint Seminar between School of Electrical Engineering, Shanghai Dianji University and Venture Business Laboratory, Saga University, March 6, 2008, Shanghai, CHINA
  AUTHOR;　Qixin Guo
  
• Growth of ZnTe thin films for THz devices application;　2008/03
  ANNOUNCEMENT INFO.;　Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, March 6, 2008
  AUTHOR;　Qixin GUO
  
• Application of nanostructured materials in electronics;　2007/12
  ANNOUNCEMENT INFO.;　Joint Symposium between Institute of Composite Materials, Shanghai Jiao Tong University and Saga University Synchrotron Application Center on Material Science and Synchrotron Light, Shanghai Jiao Tong University, December 19, 2007
  AUTHOR;　Qixin Guo
  
• ２１世紀の電気電子工学;　2007/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• シンクロトロン光によるマイクロマシンの作製について（中国語）;　2007/08
  ANNOUNCEMENT INFO.;　Shanghai Dianji University, August 9, 2007, Shanghai
  AUTHOR;　郭其新
  
• 緑色LED研究開発の現状（中国語）;　2007/08
  ANNOUNCEMENT INFO.;　中国江蘇省「能源与環保」討論会、2007年8月19日、無錫
  AUTHOR;　郭其新
  
• 高効率純緑色LEDに関する研究（中国語）;　2007/08
  ANNOUNCEMENT INFO.;　中国江蘇省「新型材料」討論会、2007年8月18日、揚州
  AUTHOR;　郭其新
  
• シンクロトロンについて(半導体への利用）;　2007/07
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• シンクロトロンについて(XAFS計測への利用）;　2007/07
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• Epitaxial Growth of ZnTe Films for Terahertz Device Applications;　2007/03
  ANNOUNCEMENT INFO.;　Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, March 8, 2007
  AUTHOR;　Qixin GUO
  
• Characterization of Advanced Functional Materials;　2007/03
  ANNOUNCEMENT INFO.;　Shanghai Jiaotong University, March 9, 2007
  AUTHOR;　Qixin GUO
  
• 未来的電子科学和技術（中国語）;　2007/03
  ANNOUNCEMENT INFO.;　Shanghai Dianji University, March 9, 2007
  AUTHOR;　Qixin GUO
  
• シンクロトロン光を用いた低誘電率膜の成長と加工に関する研究;　2007/03
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• 電気電子工学からみた未来技術;　2007/02
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• Non-thermal Process Technology by Using Synchrotron Light;　2007
  ANNOUNCEMENT INFO.;　Joint Seminar between Saga University Synchrotron Light Application Center and State Key Lab of Metal Matrix Composites, Shanghai Jiaotong University on Material Science and Synchrotron Light -2007,Saga University, Japan March 1, 2007
  AUTHOR;　Qixin GUO
  
• Low-temperature Epitaxial Growth and Microfabrication of Semiconductors using Synchrotron Light;　2006/12
  ANNOUNCEMENT INFO.;　Joint Seminar between Shanghai Institute of Applied Physics and Saga University on Synchrotron Light Applications, Shanghai Institute of Applied Physics,December 4, 2006
  AUTHOR;　Qixin GUO
  
• シンクロトロン光による化合物半導体の低温成長と微細加工（招待講演）;　2006/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• マグネトロンスパッタリング法による窒化物薄膜成膜とその光学特性;　2006/09
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• Experimental program and beamlines of Saga synchrotron light;　2006/09
  ANNOUNCEMENT INFO.;　Joint Seminar between Saga University Synchrotron Light Application Center and State Key Lab of Metal Matrix Composites, Shanghai Jiaotong University on Material Science and Synchrotron Light － Shanghai Jiaotong University, September 22, 2006.
  AUTHOR;　Qixin GUO
  
• 日韓両国の高等技術教育の現状;　2006/03
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• Low temperature epitaxial growth of semiconductors using synchrotron light;　2006/03
  ANNOUNCEMENT INFO.;　Shanghai Jiaotong University, March 1, 2006
  AUTHOR;　Qixin GUO
  
• Synchrotron Light Applications in Electronic Materials,;　2005
  ANNOUNCEMENT INFO.;　Seoul National University December 29, 2005.
  AUTHOR;　Qixin GUO
  
• Current status of researches on microelectro mechanical systems,;　2005
  ANNOUNCEMENT INFO.;　Shanghai Dianji University, March 3, 2005
  AUTHOR;　Qixin GUO
  
• On the philosophy of education and research in university,;　2005
  ANNOUNCEMENT INFO.;　Shanghai Dianji University, October 14, 2005.
  AUTHOR;　Qixin GUO
  
• Synchrotron Light Applications in Electronic Materials,;　2005
  ANNOUNCEMENT INFO.;　Busan National University, December 26, 2005.
  AUTHOR;　Qixin GUO
  
• Growth and Characterization of Semiconductors Using Synchrotron Light,;　2005
  ANNOUNCEMENT INFO.;　Yeungnam University, December 27, 2005.
  AUTHOR;　Qixin GUO
  
• ecent progresses on nano-structured materials,;　2004
  ANNOUNCEMENT INFO.;　Shanghai Dianji University, March 5, 2004
  AUTHOR;　Qixin GUO
  
• Characterization of semiconductors using synchrotron light,;　2004
  ANNOUNCEMENT INFO.;　Institute of Applied Physics, Chinese Academy of Sciences, December 15, 2004
  AUTHOR;　Qixin GUO
  
• Synchrotron Light Application in Semiconductor Materials,;　2004
  ANNOUNCEMENT INFO.;　 Shanghai Jiaotong University, December 14, 2004
  AUTHOR;　Qixin GUO
  
• Fabrication and Characterization of Nanostructured Semiconductors,;　2003
  ANNOUNCEMENT INFO.;　Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, March 6, 2003
  AUTHOR;　Qixin GUO
  
• Current status of nano-structured semiconductors,;　2003
  ANNOUNCEMENT INFO.;　Shanghai Jiaotong University, March 5, 2004
  AUTHOR;　Qixin GUO
  
• Low temperature growth of semiconductors by synchrotron radiation,;　2001
  ANNOUNCEMENT INFO.;　The Energenius Centre for Advance Nanotechnology, University of Toronto, Canada, September 18, 2001.
  AUTHOR;　Qixin GUO
  

Application of Intellectual Property Rights

• 化合物半導体の加工方法、及び化合物半導体の加工装置;　2003
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• II-VI族化合物半導体のドライエッチング方法;　2002
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• II-VI族化合物半導体結晶を基板とする光電変換機能素子の製造方法;　2002
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• 有機金属気相成長によるｐ型のテルル化亜鉛の製造方法;　2002
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  

Invited Lecture, Special Lecture

• Photoluminescence Characteristics of Rare Earth Doped Ultrawide Bandgap Semiconductors by Synchrotron Radiation Excitation (Keynote Speech);　2024/11
  ANNOUNCEMENT INFO.;　The 13th Global Conference on Materials Science and Engineering (CMSE 2024) November 17-20, 2024 Kampar, Perak, Malaysia, 8:50-9:30, November 18, 2024.
  AUTHOR;　Qixin GUO
  
• Growth and Characteristics of Rare Earth-Doped Oxide Films for Full-Color LED Applications (Invited Talk);　2024/10
  ANNOUNCEMENT INFO.;　International Conference on Innovations in Engineering and Social Science (ICIESS) 2024, Fukuoka, October 12-14, 2024, 10:00-10:25, October 14, 2024.
  AUTHOR;　Qixin Guo
  
• Full Color Light Emitting Diodes Based on Rare Earth Doped Oxide Films (Keynote Speech);　2023/10
  ANNOUNCEMENT INFO.;　The 12th Global Conference on Materials Science and Engineering, October 27-30, 2023, Shenzhen, China, 8:40-9:20, October 28, 2023.
  AUTHOR;　Qixin GUO
  
• Color-Tunable Light Emitting Diodes Based on Rare Earth Doped Gallium Oxide Films (Keynote Speech);　2022/09
  ANNOUNCEMENT INFO.;　The 11th Global Conference on Materials Science and Engineering, September 16-19, 2022 Online, 08:40-09:20, September 17, 2022.
  AUTHOR;　
  
• 同步辐射在第三代半导体光电材料领域中的应用和研究动态(Invited Talk);　2021/08
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• Efficient Color-tunable Emission from Rare Earth Doped Gallium Oxide Films (Keynote Speech);　2021/08
  ANNOUNCEMENT INFO.;　The 10th Global Conference on Material Science and Engineering (CMSE2021), August 1-4, 2021 Online Conference, Microsoft Teams/ Eastern European Time (EET)- UTC +2, 9:15-9:55, August 2,2021.
  AUTHOR;　Qixin GUO
  
• シンクロトロン光を用いたワイドバンドギャップ半導体の評価;　2020/12
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• Low Temperature Growth and Characterization of Ultrawide Bandgap Gallium Oxide Based Semiconductors (Invited talk);　2020/11
  ANNOUNCEMENT INFO.;　2020 International Forum on Wide Bandgap Semiconductors (IFWS 2020) November 23-25, 2020, Shenzhen, P209, Nov. 24th, 9:00-9:25 (Online)
  AUTHOR;　Qixin GUO
  
• Low Temperature Growth of Gallium Oxide Based Ultrawide Bandgap Semiconductors (Keynote Speech);　2020/11
  ANNOUNCEMENT INFO.;　The 9th Global Conference on Materials Science and Engineering, November 20-23, 2020, Eastern European Time (EET)- UTC +2, ONLINE - Microsoft Teams Meeting November 21, 2020, 10:30-11:05.
  AUTHOR;　Qixin GUO
  
• Epitaxial Growth and Characteristics of Gallium Oxide Based Ultrawide Bandgap Semiconductors (Keynote Speech);　2020/10
  ANNOUNCEMENT INFO.;　The 10th International Conference on Electronics, Communications and Networks (CECNet 2020), October 25-28, 2020, Online, Oct. 26, 10:10-10:50.
  AUTHOR;　
  
• Epitaxial growth of gallium oxide based ultrawide bandgap semiconductors (Invited talk);　2020/09
  ANNOUNCEMENT INFO.;　2020中日韓工程技術大会、Yantai, China, September 16, 2020. Online http://www.cjkcetyantai.com/frontend/web/article/sub-forum/346
  AUTHOR;　Qixin GUO
  
• Characteristics of gallium oxide based wide bandgap semiconductors (Invited talk);　2020/07
  ANNOUNCEMENT INFO.;　King Abdullah University of Science and Technology, July 9, 2020, 9:00-10:30, Online, https://kaust.zoom.us/j/2377519260.
  AUTHOR;　Qixin GUO
  
• Growth and Characterization of Ultra-Wide Bandgap Oxide Semiconductors (Invited talk);　2019/11
  ANNOUNCEMENT INFO.;　2019 International Forum on Wide Bandgap Semiconductors November 25-27, 2019, Shenzhen, 9:00-9:25, November 26.
  AUTHOR;　Qixin GUO
  
• High pressure influences on properties of Ga2O3 based films (Invited talk);　2019/10
  ANNOUNCEMENT INFO.;　The 9th International Conference on Electronics, Communications and Networks (CECNet 2019), October 18-21, 2019, Kitakyushu, Japan. Session 1 14:20-14:40, Oct. 19, 2019.
  AUTHOR;　Fabi Zhang, Qixin Guo
  
• 同步辐射在光电材料领域中的应用和研究动态;　2019/10
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• Characteristics of gallium oxide based wide bandgap semiconductors (Invited talk);　2019/10
  ANNOUNCEMENT INFO.;　The 8th IEEE International Symposium on Next-Generation Electronics (ISNE 2019) , Zhengzhou, 9-10, Oct., 2019, Session 11, 13:30-14:00, 10, Oct..
  AUTHOR;　Qixin GUO
  
• 同步辐射在光电材料领域中的应用和研究动态;　2019/03
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• 同步辐射在光电材料领域中的应用和研究动态;　2019/03
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• 同步辐射在光电材料领域中的应用和研究动态;　2019/02
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• Recent progress on growth of gallium oxide based wide bandgap semiconductors;　2018/11
  ANNOUNCEMENT INFO.;　Xi'an Jiaotong University, 15:00-16:00, Nov. 5, 2018.
  AUTHOR;　Qixin GUO
  
• Characteristics of gallium oxide based semiconductors (Invited talk);　2018/11
  ANNOUNCEMENT INFO.;　The 7th Global Conference on Materials Science and Engineering (CMSE2018), November 1st-4th, 2018, Xi'an, Shaanxi, China, CMSE3619, 15:20-15:40, Nov. 2.
  AUTHOR;　Qixin GUO
  
• Characteristics of gallium oxide based wide bandgap semiconductors (Invited);　2018/10
  ANNOUNCEMENT INFO.;　7th International Symposium on Transparent Conductive Materials, 4th EMRS & MRS-J Bilateral Symposium on Advanced Oxides and Wide Bandgap Semiconductors, 14-19 October Crete, Greece, BS2-I10, 16:30-17:00, 17 October.
  AUTHOR;　Qixin GUO
  
• Ultraviolet Photodetectors Based on Monoclinic and Cubic (GaIn)2O3 Films (Invited);　2018/08
  ANNOUNCEMENT INFO.;　The 5th International Conference on Nanomechanics and Nanocomposites, 22-25 August 2018, Fukuoka, Japan, 24-A-09, 24 August 2018.
  AUTHOR;　Fabi Zhang, , Haiou Li, Qi Li, Yonghe Chen, Tao Fu, Gongli Xiao, Tangyou Shun, Yanrong Deng Qixin Guo
  
• Epitaxial Growth of Gallium Oxide Based Wide Bandgap (Keynote);　2018/08
  ANNOUNCEMENT INFO.;　The 5th International Conference on Nanomechanics and Nanocomposites, 22-25 August 2018, Fukuoka, Japan, 24-A-08, 24 August 2018.
  AUTHOR;　Q.X. Guo*, K. Saito, T. Tanaka
  
• Microstructural and Optical Properties of Nanograined Si Processed by High-Pressure Torsion (Invited);　2018/08
  ANNOUNCEMENT INFO.;　The 5th International Conference on Nanomechanics and Nanocomposites, 22-25 August 2018, Fukuoka, Japan, 24-A-06, 24 August 2018.
  AUTHOR;　Yoshifumi Ikoma, Bumsoo Chon, Terumasa Yamasaki, Katsuhiko Saito, Qixin Guo, Martha R. McCartney, David J. Smith, Zenji Horita
  
• Nano Zinc Oxide Doping and Its Application in Laminated Solar Cells (Invited);　2018/08
  ANNOUNCEMENT INFO.;　The 5th International Conference on Nanomechanics and Nanocomposites, 22-25 August 2018, Fukuoka, Japan, 24-A-02, 24 August 2018.
  AUTHOR;　X.H. Wang, R.B. Li, J. Zhang, H. L. Shang, Q.X. Guo
  
• Pure green emission from Er doped gallium oxide (Invited talk);　2018/06
  ANNOUNCEMENT INFO.;　Collaborative Conference on Materials Research (CCMR) 2018, 25-29 June, Incheon/Seoul, South Korea, 12:00-12:30, June 26, 2018.
  AUTHOR;　Qixin GUO
  
• Growth and characterization of gallium oxide based wide bandgap semiconductors (Invited talk);　2018/05
  ANNOUNCEMENT INFO.;　International Conference on Physics of Light-Matter Coupling in Nanostructures, Chengdu - China, May 15-19, 14:00-14:30, May 16, 2018.
  AUTHOR;　Qixin GUO
  
• 同步辐射在光电材料领域中 的应用和研究动态;　2018/05
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• Synchrotron Light Applications for Characterizing Functional Materials (Invited);　2018/04
  ANNOUNCEMENT INFO.;　Shanghai Institute of Ceramics, Chinese Academy of Sciences, April 6, 2018.
  AUTHOR;　Qixin GUO
  
• Characteristics of gallium oxide based wide bandgap semiconductors;　2017/11
  ANNOUNCEMENT INFO.;　Cross-Strait Forum on Gallium Oxide and Related Materials and Devices 2017, Nov. 18-21, 2017, Nov. 19, 17:00-17:30.
  AUTHOR;　Qixin GUO
  
• Characteristics of gallium oxide based wide bandgap semiconductors (Invited Talk);　2017/10
  ANNOUNCEMENT INFO.;　TACT2017 International Thin Film Conference, Oct. 15-18, National Dong Hwa Univesity, C-I-0039, Oct. 17, 12:30-12:50, 2017.
  AUTHOR;　Qixin GUO
  
• Epitaxial growth of gallium oxide based wide bandgap semiconductors (Invited);　2017/06
  ANNOUNCEMENT INFO.;　Collaborative Conference on Materials Research (CCMR) 2017, 26-30 June 2017, International Convention Center (ICC) Jeju, South Korea, Room 301A 12:00-12:30, June 26, 2017.
  AUTHOR;　Qixin GUO
  
• Current status of researches on third generation semiconductors (Invited Talk);　2016/11
  ANNOUNCEMENT INFO.;　School of Electronic and Electric Engineering, Shanghai university of Engineering Science, Nov. 4th, 9:30-10:40, 2016
  AUTHOR;　Qixin Guo
  
• Synchrotron Light Applications for researches on third generation semiconductors (Invited Talk);　2016/11
  ANNOUNCEMENT INFO.;　Department of Physics, Shanghai Normal University, Nov. 4th, 15:00-16:30, 2016
  AUTHOR;　Qixin Guo
  
• Growth and characterization of gallium oxide based wide bandgap semiconductors (Invited);　2016/11
  ANNOUNCEMENT INFO.;　Suzhou Institute of Nano-Tech and Nano-Bionics, Chineses Academy of Sciences, Nov. 1st, 16:00-17:30, 2016
  AUTHOR;　Qixin Guo
  
• Epitaxial growth and characterization of gallium oxide based wide bandgap semiconductors (Invited Talk);　2016/10
  ANNOUNCEMENT INFO.;　International Conference on Optoelectronics and Microelectronics Technology and Application OMTA 2016, Shanghai, 10-12 Oct. Conf, 5,6, Session 4, 11:00-11:25, 12 Oct. 2016
  AUTHOR;　Qixin GUO
  
• Epitaxial growth of ZnTe films y MOCVD (Invited talk);　2016/08
  ANNOUNCEMENT INFO.;　The 14th national conference on MOCVD, August 16-19, 2016, Yanji, ID-5, 8:00-8:25, August 28.
  AUTHOR;　Qixin Guo
  
• Growth and characterization of (AlGa)2O3 films (Invited Talk);　2016/07
  ANNOUNCEMENT INFO.;　The International Workshop on UV Materials and Devices (IWUMD-2016), Peking University, July 27-71, 2016, I-21, 13:30-13:55, July 29.
  AUTHOR;　Qixin Guo
  
• 光电材料的应用和研究动态;　2016/03
  ANNOUNCEMENT INFO.;　上海交通大学、2016年3月11日10：00－11：40
  AUTHOR;　Qixin GUO
  
• Characterization of compound semiconductors by using synchrotron light (Invited Talk);　2016/01
  ANNOUNCEMENT INFO.;　Korea University of Technology and Education, January 21, 2016.
  AUTHOR;　Qixin GUO
  
• Characteristics of synchrotron light (Invited Talk);　2016/01
  ANNOUNCEMENT INFO.;　Korea University of Technology and Education, January 20, 2016.
  AUTHOR;　Qixin GUO
  
• Introduction to Synchrotron Light (Invited talk);　2016/01
  ANNOUNCEMENT INFO.;　Korea University of Technology and Education, January 19, 2016.
  AUTHOR;　Qixin GUO
  
• Epitaxial Growth and Characterization of Nitride Semiconductors for Multi-Junction Tandem Solar Cells (Invited Talk);　2015/12
  ANNOUNCEMENT INFO.;　2015 INTERNATIONAL CONFERENCE FOR LEADING AND YOUNG MATERIALS SCIENTISTS (IC-LYMS 2015), Dec 24, – Dec 27, 2015 , Sanya, Dec. 25, 2015, 13:30-14:00.
  AUTHOR;　Qixin GUO
  
• Formation of metastable phases and nanograined Silicon by severe plastic deformation under high pressure (Invited Talk);　2015/11
  ANNOUNCEMENT INFO.;　11th China SoG Silicon and PV Power Conference, Nov. 26-28, 2015, Hangzhou, China. Nov. 28, 16:30-16:50.
  AUTHOR;　Yoshifumi Ikoma, Katsuhiko Saito, Qixin Guo, and Zenji Horita
  
• Synchrotron Light Applications for Characterizing Semiconductor Materials (Invited Talk);　2015/10
  ANNOUNCEMENT INFO.;　Tsinghua University, October 13, 2015, 10:00-11:30
  AUTHOR;　Qixin GUO
  
• Epitaxial growth and characterization of (GaIn)2O3 and (AlGa)2O3 films (Invited Talk);　2015/10
  ANNOUNCEMENT INFO.;　The 2015 International Symposium of the Electronic Ceramics Materials and its Application (ISECMA-2015), Oct. 28-30, Shanghai, I-16, 16:20-16:45, Oct. 28, 2015.
  AUTHOR;　Qixin GUO
  
• Epitaxial Growth and Characterization of (GaIn)2O3 and (AlGa)2O3 Films (Invited Talk);　2015/10
  ANNOUNCEMENT INFO.;　Institure of Physics, Chinese Academy of Sciences, October 9 , 2015, 10:00-11:30
  AUTHOR;　Qixin GUO
  
• Synchrotron Light Applications for Characterizing Semiconductor Materials (Invited Talk);　2015/10
  ANNOUNCEMENT INFO.;　Peking University, October 8, 2015, 15:00-16:30
  AUTHOR;　Qixin GUO
  
• Epitaxial growth and characterization of compound semiconductors (Invited Talk);　2015/08
  ANNOUNCEMENT INFO.;　Shangha Institute of Microsystem and Information Technology, Chinese Academy of Sciences, August 14, 2015.
  AUTHOR;　Qixin GUO
  
• Tunable bandgap of Ga2O3 based semiconductors (Invited Talk);　2015/08
  ANNOUNCEMENT INFO.;　7th National Conference on ZnO in China, Kunming, August 16-18, 2015.
  AUTHOR;　Qixin Guo, Fabi Zhang, Katsuhiko Saito, Tooru Tanaka, Mitsuhiro Nishio
  
• Growth of (GaIn)2O3 Films and Nanostructures (Invited Talk);　2015/06
  ANNOUNCEMENT INFO.;　8th International Conference on Materials for Advanced Technologies, 28 June - 03 July, 2015, Suntec Singapore, O1-2, 17:00-17:30 29 June, 2015
  AUTHOR;　Qixin GUO
  
• 光电材料的应用和研究动态;　2015/05
  ANNOUNCEMENT INFO.;　
  AUTHOR;　
  
• Epitaxial growth and characterization of nitride semiconductors (Invited talk);　2015/01
  ANNOUNCEMENT INFO.;　Shanghai University of Engineering Science, Jan. 21, 2015.
  AUTHOR;　Qixin Guo
  
• Epitaxial Growth and Characterization of InGaN for Multi Junction Tandem Solar Cells (Invited Talk);　2014/11
  ANNOUNCEMENT INFO.;　10th China SoG Silicon and PV Power Conference, Nov. 6-8, 2014, Nantong, China. Nov. 8, 14:10-14:30.
  AUTHOR;　Qixin GUO
  
• Heteroepitaxy growth and chatacterization of compound semiconductors (Invited Talk);　2014/11
  ANNOUNCEMENT INFO.;　Asia Communications and Photonics Conference, November 11-14, 2014, Shanghai International Convention Center, China, AW3J.1 13:30-14:00, November 12.
  AUTHOR;　Qixin GUO
  
• Epitaxial Growth and Characterization of ZnTe Films (Invited Talk);　2014/10
  ANNOUNCEMENT INFO.;　The 7th Vacuum and Surface Sciences Conference of Asia and Australia (VASSCAA-7),October 5-9,2014, National Tsing Hua University, Hsinchu, Taiwan. TF/SS-2, Oct. 9 am10:30-11:10.
  AUTHOR;　Qixin GUO
  
• Growth and Characterization of (GaIn)2O3 Films (Invited Talk);　2014/10
  ANNOUNCEMENT INFO.;　The Joint International Conference of the 9th Asian Meeting on Ferroelectricity (AMF-9) and the 9th Asian Meeting on Electroceramics (AMEC-9), Oct. 26-30, 2014, Shanghai, I037-5H-A008, AM 10:15-10:45, 28 Oct. 2014.
  AUTHOR;　Qixin Guo, Fabi Zhang, Katsuhiko Saito, Tooru Tanaka, and Mitsuhiro Nishio
  
• Heteroepitaxial growth of II-VI compound semiconductors (Invited Talk);　2014/07
  ANNOUNCEMENT INFO.;　 Optics Frontier—The 6th National Conference on Information Optics and Photonics and the International Workshop on Information Optics Technology, July 22-27, Changchun, China
  AUTHOR;　Qixin GUO
  
• Epitaxial growth of compound semiconductors for high efficiency solar cells;　2013/10
  ANNOUNCEMENT INFO.;　Shanghai Normal University, October 9, 2013.
  AUTHOR;　Qixin Guo
  
• Growth and characterization of ZnTe thin films (Invited Talk);　2013/09
  ANNOUNCEMENT INFO.;　The 8th International Conference on THIN FILM PHYSICS AND APPLICATIONS, Session 1, 15:20-15:50, September 21, Shanghai, China, September 20-23, 2013.
  AUTHOR;　Qixin Guo, Hajime Akiyama, Katsuhiko Saito, Tooru Tanaka, and Mitsuhiro Nishio
  
• Research activity on optoelectronic materials and devices at Saga University;　2013/09
  ANNOUNCEMENT INFO.;　Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, September 25, 2013.
  AUTHOR;　Qixin Guo
  
• Current Status of Researches on THz Applications;　2013/03
  ANNOUNCEMENT INFO.;　Shanghai Normal University, March 8, 2013
  AUTHOR;　Qixin Guo
  
• Heteroepitaxial growth of ZnTe layers by MOVPE (Invited Talk);　2012/12
  ANNOUNCEMENT INFO.;　The Collaborative Conference on Crystal Growth 2012, A23, December 12, 2012, 14:00-14:25, Doubletree by Hilton Orlando at SeaWorld, Orlando, FL, USA.
  AUTHOR;　Qixin Guo, Katsuhiko Saito, Tooru Tanaka, and Mitsuhiro Nishio
  
• Low-temperature Epitaxial Growth of GaInN Films (Invited Talk);　2012/08
  ANNOUNCEMENT INFO.;　The 8th International Forum on Advanced Materials Science and Technology, Fukuoka, Japan, Augest 1-4, 2012, 3A-OS01-08.
  AUTHOR;　Q.X. Guo, T. Nakao, M. Arita, K. Saito, T. Tanaka and M. Nishio
  
• Growth of advanced materials for THz device applications (Invited Talk);　2012/08
  ANNOUNCEMENT INFO.;　Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, August 10, 2012.
  AUTHOR;　Qixin Guo
  
• Synchrotron Light Applications for Characterizing Advanced Thin Films (Invited Talk);　2012/07
  ANNOUNCEMENT INFO.;　The 6th International Conference on Technological Advances of Thin Films & Surface Coatings, FPT 2060, 14-17 July, 2012, Singapore Management University, Singapore
  AUTHOR;　Qixin Guo
  
• 光電材料的応用与発展;　2012/03
  ANNOUNCEMENT INFO.;　上海交通大学、2012年3月8日
  AUTHOR;　郭　其新
  
• Synchrotron Light Application in Optoelectronics;　2012/03
  ANNOUNCEMENT INFO.;　Shanghai Normal University, March 9, 2012.
  AUTHOR;　Qixin Guo
  
• Synchrotron light applications for characterizing novel photonic materials (Invited Talk);　2011/12
  ANNOUNCEMENT INFO.;　International Photonics Conference 2011, December 8-10, 2011, Tainan, E-SA-V6.
  AUTHOR;　Qixin Guo
  
• Current Status of Researches on Optoelectronics;　2011/12
  ANNOUNCEMENT INFO.;　Shanghai Normal University, December 20, 2011.
  AUTHOR;　Qixin Guo
  
• Advanced Technologies in Optoelectronics;　2011/12
  ANNOUNCEMENT INFO.;　Guilin University of Electronic Technology, December 26, 2011, Guilin, China
  AUTHOR;　Qixin Guo
  
• Current Status of Researches on Advanced Functional Materials;　2011/12
  ANNOUNCEMENT INFO.;　Department of Physics, Guangxi University, Nanning,China, December 28, 2011.
  AUTHOR;　Qixin Guo
  
• Synchrotron light application for characterizing novel energy materials (Invited talk);　2011/11
  ANNOUNCEMENT INFO.;　10th International conferrence on Ecomaterials, November 21-24, 2011, Shanghai, China.
  AUTHOR;　Qixin Guo
  
• Synchrotron Light Applications for Characterizing Novel Functional Materials (Invited Talk);　2011/10
  ANNOUNCEMENT INFO.;　2011 Workshop on Advances in Functional Materials, Oct. 24, 2011, Dalian University of Technology, China.
  AUTHOR;　Qixin GUO
  
• Synchrotron Light Applications for Characterizing Novel Functional Materials (Invited Talk);　2011/10
  ANNOUNCEMENT INFO.;　The 1st Annual World Congress of Nano-S& T, Tract 3-16, Oct. 25, World EXPO Center, Dalian, China,
  AUTHOR;　Qixin GUO
  
• STRUCTURAL PROPERTIES OF MAGNETITE FILMS GROWN BY PULSED LASER DEPOSITION (Invited Talk);　2011/07
  ANNOUNCEMENT INFO.;　The Nineteenth Annual International Conference on COMPOSITES/NANO ENGINEERING, Shanghai, China, July 24-30, 2011, Session 2d OXIDE 1, Invited Talk, July 25, 5:00-5:20PM
  AUTHOR;　Qixin Guo, Kazuki Nakamura, Katsuhiko Saito, Tooru Tanaka, Mitsuhiro Nishio, Makoto Arita, Yoshifumi Ikoma, Jian Ding, and Di Zhang
  
• Low-temperature epitaxial growth of nitride semiconductor thin films (Invited Talk);　2010/09
  ANNOUNCEMENT INFO.;　7th International conference on Thin Film Physics and Applications, Sep. 24-27, Shanghia, China, III-1.
  AUTHOR;　Qixin GUO, Katsuhiko Saito, Yaliu Ding, Tooru Tanaka, and Mitsuhiro Nishio
  
• Growth of nitride thin films for multi-junction tandem solar cells (Invited Talk);　2010/06
  ANNOUNCEMENT INFO.;　The 7th International Forum on Advanced Material Science and Technology,26-28 June 2010, The Dalian University of Technology, Dalian, A-115.
  AUTHOR;　Qixin Guo,Yuta Kusunoki, Yaliu Ding, Katsuhiko Saito, Tooru Tanaka, and Mitsuhiro Nishio
  
• Growth and characterization of nitride compounds for clean energy applications;　2010/01
  ANNOUNCEMENT INFO.;　International workshop on the novel quantum detection structure for opto-electronic conversion, Janurary 5, 2010, Sanya, China.
  AUTHOR;　Qixin GUO
  
• Low-temperature Growth and Characterization of Thin Films for Clean Energy Applications;　2009/12
  ANNOUNCEMENT INFO.;　TACT 2009 International Thin Films Conference, December 14 - 16, 2009, NTUT, Taipei, Taiwan, A022-I (Invited Talk)
  AUTHOR;　Qixin Guo
  
• Synchrotron Light Applications in Advanced Materials;　2009/12
  ANNOUNCEMENT INFO.;　National Chung Hsing University, December 17, 2009.
  AUTHOR;　Qixin Guo
  
• Growth and Characterization of Advanced Materials for Clean Energy Applications;　2009/12
  ANNOUNCEMENT INFO.;　Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Science, December 31, 2009, Suzhou, China.
  AUTHOR;　Qixin GUO
  
• Epitaxial Growth and Characterization of ZnTe Thin Films for Terahertz Devices (Invited talk);　2009/09
  ANNOUNCEMENT INFO.;　The 8th Pacific Rim Conference on Lasers and Electro-Optics, August 30 - September 3rd, 2009, Shanghai, China, TuG2-1
  AUTHOR;　Qixin GUO
  
• Growth and characterization of ZnTe for pure-green light emitting diodes and terahertz devices (Invited Lecture);　2009/06
  ANNOUNCEMENT INFO.;　International Conference on Advances in Functional Materials, I-9-19, June 9-12, 2009, Jiuzhaigou, China
  AUTHOR;　Qixin Guo, T. Tanaka, and M. Nishio
  

Translation and Introduction of Academic Books, Work Overseas

• 光源加速器;　2010/04
  ANNOUNCEMENT INFO.;　
  AUTHOR;　郭其新
  
• 放射光照射を用いるプロセスの研究;　2010/04
  ANNOUNCEMENT INFO.;　放射光科学入門、上海交通大学出版社、pp.151-159
  AUTHOR;　郭其新