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Influence of dopant transport rate upon photoluminescence and electrical properties of phosphorus-doped ZnMgTe layers grown by MOVPE

著者：

K. Saito, T. Saeki, T. Tanaka, Q.X. Guo, and M. Nishio

題名：

発表情報：

Physica Status Solidi (C) Current Topics in Solid State Physics 巻: 9 号: 8-9 ページ: 1736-1739

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概要：

抄録：

Author：

K. Saito, T. Saeki, T. Tanaka, Q.X. Guo, and M. Nishio

Title：

Influence of dopant transport rate upon photoluminescence and electrical properties of phosphorus-doped ZnMgTe layers grown by MOVPE

Announcement information:

Physica Status Solidi (C) Current Topics in Solid State Physics Vol: 9 Issue: 8-9 Page: 1736-1739