日本語フィールド
著者:Qixin GUO題名:Characteristics of gallium oxide based wide bandgap semiconductors (Invited talk)発表情報:The 8th IEEE International Symposium on Next-Generation Electronics (ISNE 2019) , Zhengzhou, 9-10, Oct., 2019, Session 11, 13:30-14:00, 10, Oct..キーワード:概要:抄録:英語フィールド
Author:Qixin GUOTitle:Characteristics of gallium oxide based wide bandgap semiconductors (Invited talk)Announcement information:The 8th IEEE International Symposium on Next-Generation Electronics (ISNE 2019) , Zhengzhou, 9-10, Oct., 2019, Session 11, 13:30-14:00, 10, Oct..