日本語フィールド
著者：Fabi Zhang; Katsuhiko Saito; Tooru Tanaka; Mitsuhiro Nishio Nishio; Qixin Guo*題名：Electrical properties of Si doped Ga2O3 films grown by pulsed laser deposition発表情報：Journal of Materials Science: Materials in Electronics, 26, 9624-9629, 2015.キーワード：概要：抄録：英語フィールド
Author：Fabi Zhang; Katsuhiko Saito; Tooru Tanaka; Mitsuhiro Nishio Nishio; Qixin Guo*Title：Electrical properties of Si doped Ga2O3 films grown by pulsed laser depositionAnnouncement information:Journal of Materials Science: Materials in Electronics, 26, 9624-9629, 2015.