日本語フィールド
著者:Q. Guo, M. Ogata, Y. Ding, T. Tanaka, M. Nishio題名:Growth of InGaN films by reactive sputtering発表情報:The 10th International Symposium on Sputtering and Plasma Processes, Kanazawa, July 8-10, 2009, TF P1-27.キーワード:概要:抄録:英語フィールド
Author:Q. Guo, M. Ogata, Y. Ding, T. Tanaka, M. NishioTitle:Growth of InGaN films by reactive sputteringAnnouncement information:The 10th International Symposium on Sputtering and Plasma Processes, Kanazawa, July 8-10, 2009, TF P1-27.