日本語フィールド
著者:Q.X.Guo, T.Yamamura, A.Yoshida, and N.Itoh題名:Structural properties of InN film grown on sapphire substrate by microwave excited metalorganic vapor phase epitaxy発表情報:Journal of Applied Physics, 75, 4927-4932 (1994).
キーワード:概要:抄録:英語フィールド
Author:Q.X.Guo, T.Yamamura, A.Yoshida, and N.ItohTitle:Structural properties of InN film grown on sapphire substrate by microwave excited metalorganic vapor phase epitaxyAnnouncement information:Journal of Applied Physics, 75, 4927-4932 (1994).