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Raman investigation of disorder in InN thin films grown by reactive sputtering on GaAs

著者：

Z.G. Qian, W.Z. Shen, H. Ogawa and Q.X. Guo

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発表情報：

Journal of Applied Physics 巻: 93 ページ: 2643-2647

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概要：

抄録：

Author：

Z.G. Qian, W.Z. Shen, H. Ogawa and Q.X. Guo

Title：

Raman investigation of disorder in InN thin films grown by reactive sputtering on GaAs

Announcement information:

Journal of Applied Physics Vol: 93 Page: 2643-2647