日本語フィールド
著者:W. Pan, W.Z. Shen, H. Ogawa, and Q.X. Guo題名:Electrical properties of semiconductor InN (Review paper)発表情報:Progress in Physics, (in Chinese) 号: 24 ページ: 195-215キーワード:概要:抄録:英語フィールド
Author:W. Pan, W.Z. Shen, H. Ogawa, and Q.X. GuoTitle:Electrical properties of semiconductor InN (Review paper)Announcement information:Progress in Physics, (in Chinese) Issue: 24 Page: 195-215