MF研究者総覧

教員活動データベース

詳細

The improvement of Schottky barrier diodes fabricated only by B ion implantation doping accomplished by refinement of the electrode structure

発表形態：
原著論文
主要業績：
主要業績
単著・共著：
共著
発表年月：
2023年03月
DOI：
会議属性：
指定なし
査読：
有り
リンク情報：

日本語フィールド

著者：
Yuhei Seki, Niloy Chandra Saha, Seiya Shigematsu, Yasushi HOSHINO, Jyoji Nakata, Toshiyuki Oishi and Makoto Kasu 読み: Yuhei Seki, Niloy Chandra Saha, Seiya Shigematsu, Yasushi HOSHINO, Jyoji Nakata, Toshiyuki Oishi and Makoto Kasu
題名：
The improvement of Schottky barrier diodes fabricated only by B ion implantation doping accomplished by refinement of the electrode structure
発表情報：
Jpn. J. Appl. Phys. 巻: 62 ページ: 040902
キーワード：
概要：
The improvement of Schottky barrier diodes fabricated only by B ion implantation doping accomplished by refinement of the electrode structure
抄録：
The improvement of Schottky barrier diodes fabricated only by B ion implantation doping accomplished by refinement of the electrode structure

英語フィールド

Author：
Yuhei Seki, Niloy Chandra Saha, Seiya Shigematsu, Yasushi HOSHINO, Jyoji Nakata, Toshiyuki Oishi and Makoto Kasu
Title：
The improvement of Schottky barrier diodes fabricated only by B ion implantation doping accomplished by refinement of the electrode structure
Announcement information:
Jpn. J. Appl. Phys. Vol: 62 Page: 040902
An abstract：
The improvement of Schottky barrier diodes fabricated only by B ion implantation doping accomplished by refinement of the electrode structure
An abstract：
The improvement of Schottky barrier diodes fabricated only by B ion implantation doping accomplished by refinement of the electrode structure

Copyright © MEDIA FUSION Co.,Ltd. All rights reserved.