日本語フィールド
著者：Sayleap Sdoeung, Kohei Sasaki, Katsumi Kawasaki, Jun Hirabayashi, Akito Kuramata and Makoto Kasu 読み: Sayleap Sdoeung, Kohei Sasaki, Katsumi Kawasaki, Jun Hirabayashi, Akito Kuramata and Makoto Kasu題名：Characterization of dislocation of halide vapor phase epitaxial (001) β-Ga2O3 by ultrahigh sensitive emission microscopy and synchrotron X-ray topography and its influence on Schottky barrier diodes発表情報：Jpn. J. Appl. Phys 巻: 62 ページ: SF1001キーワード：概要：Characterization of dislocation of halide vapor phase epitaxial (001) β-Ga2O3 by ultrahigh sensitive emission microscopy and synchrotron X-ray topography and its influence on Schottky barrier diodes抄録：Characterization of dislocation of halide vapor phase epitaxial (001) β-Ga2O3 by ultrahigh sensitive emission microscopy and synchrotron X-ray topography and its influence on Schottky barrier diodes英語フィールド
Author：Sayleap Sdoeung, Kohei Sasaki, Katsumi Kawasaki, Jun Hirabayashi, Akito Kuramata and Makoto KasuTitle：Characterization of dislocation of halide vapor phase epitaxial (001) β-Ga2O3 by ultrahigh sensitive emission microscopy and synchrotron X-ray topography and its influence on Schottky barrier diodesAnnouncement information:Jpn. J. Appl. Phys Vol: 62 Page: SF1001An abstract：Characterization of dislocation of halide vapor phase epitaxial (001) β-Ga2O3 by ultrahigh sensitive emission microscopy and synchrotron X-ray topography and its influence on Schottky barrier diodesAn abstract：Characterization of dislocation of halide vapor phase epitaxial (001) β-Ga2O3 by ultrahigh sensitive emission microscopy and synchrotron X-ray topography and its influence on Schottky barrier diodes