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Identification of dislocation responsible for leakage current in halide vapor phase epitaxial (001) β-Ga2O3 Schottky barrier diodes investigated via ultrahigh-sensitive emission microscopy and synchrotron X-ray topography

発表形態：
原著論文
主要業績：
主要業績
単著・共著：
共著
発表年月：
2022年12月
DOI：
会議属性：
指定なし
査読：
有り
リンク情報：

日本語フィールド

著者：
Sayleap Sdoeung, Kohei Sasaki, Akito Kuramata, and Makoto Kasu 読み: Sayleap Sdoeung, Kohei Sasaki, Akito Kuramata, and Makoto Kasu
題名：
Identification of dislocation responsible for leakage current in halide vapor phase epitaxial (001) β-Ga2O3 Schottky barrier diodes investigated via ultrahigh-sensitive emission microscopy and synchrotron X-ray topography
発表情報：
Appl. Phys. Express 巻: 15 ページ: 111001
キーワード：
概要：
Identification of dislocation responsible for leakage current in halide vapor phase epitaxial (001) β-Ga2O3 Schottky barrier diodes investigated via ultrahigh-sensitive emission microscopy and synchrotron X-ray topography
抄録：
Identification of dislocation responsible for leakage current in halide vapor phase epitaxial (001) β-Ga2O3 Schottky barrier diodes investigated via ultrahigh-sensitive emission microscopy and synchrotron X-ray topography

英語フィールド

Author：
Sayleap Sdoeung, Kohei Sasaki, Akito Kuramata, and Makoto Kasu
Title：
Identification of dislocation responsible for leakage current in halide vapor phase epitaxial (001) β-Ga2O3 Schottky barrier diodes investigated via ultrahigh-sensitive emission microscopy and synchrotron X-ray topography
Announcement information:
Appl. Phys. Express Vol: 15 Page: 111001
An abstract：
Identification of dislocation responsible for leakage current in halide vapor phase epitaxial (001) β-Ga2O3 Schottky barrier diodes investigated via ultrahigh-sensitive emission microscopy and synchrotron X-ray topography
An abstract：
Identification of dislocation responsible for leakage current in halide vapor phase epitaxial (001) β-Ga2O3 Schottky barrier diodes investigated via ultrahigh-sensitive emission microscopy and synchrotron X-ray topography

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