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High Crystal Quality of Vertical Bridgman and Edge-defined Film-fed Growth-Grown β-Ga2O3 Bulk Crystal Investigated Using High-Resolution X-ray Diffraction and Synchrotron X-ray Topography

発表形態：
原著論文
主要業績：
主要業績
単著・共著：
共著
発表年月：
2022年12月
DOI：
会議属性：
指定なし
査読：
有り
リンク情報：

日本語フィールド

著者：
Muhidul Islam Chaman, Keigo Hoshikawa, Sayleap Sdoeung, and Makoto Kasu 読み: Muhidul Islam Chaman, Keigo Hoshikawa, Sayleap Sdoeung, and Makoto Kasu
題名：
High Crystal Quality of Vertical Bridgman and Edge-defined Film-fed Growth-Grown β-Ga2O3 Bulk Crystal Investigated Using High-Resolution X-ray Diffraction and Synchrotron X-ray Topography
発表情報：
Japanese Journal of Applied Physics 巻: 61 ページ: 055501
キーワード：
概要：
High Crystal Quality of Vertical Bridgman and Edge-defined Film-fed Growth-Grown β-Ga2O3 Bulk Crystal Investigated Using High-Resolution X-ray Diffraction and Synchrotron X-ray Topography
抄録：
High Crystal Quality of Vertical Bridgman and Edge-defined Film-fed Growth-Grown β-Ga2O3 Bulk Crystal Investigated Using High-Resolution X-ray Diffraction and Synchrotron X-ray Topography

英語フィールド

Author：
Muhidul Islam Chaman, Keigo Hoshikawa, Sayleap Sdoeung, and Makoto Kasu
Title：
High Crystal Quality of Vertical Bridgman and Edge-defined Film-fed Growth-Grown β-Ga2O3 Bulk Crystal Investigated Using High-Resolution X-ray Diffraction and Synchrotron X-ray Topography
Announcement information:
Japanese Journal of Applied Physics Vol: 61 Page: 055501
An abstract：
High Crystal Quality of Vertical Bridgman and Edge-defined Film-fed Growth-Grown β-Ga2O3 Bulk Crystal Investigated Using High-Resolution X-ray Diffraction and Synchrotron X-ray Topography
An abstract：
High Crystal Quality of Vertical Bridgman and Edge-defined Film-fed Growth-Grown β-Ga2O3 Bulk Crystal Investigated Using High-Resolution X-ray Diffraction and Synchrotron X-ray Topography

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