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Defects responsible for leakage current in β-Ga2O3 Schottky barrier diodes observed by ultrahigh sensitive emission microscopy and synchrotron X-ray topography

発表形態：
招待講演・特別講演（学会シンポジウム等での講演を含む）
主要業績：
主要業績
単著・共著：
共著
発表年月：
2022年11月
DOI：
会議属性：
国際会議（国内開催を含む）
査読：
有り
リンク情報：

日本語フィールド

著者：
Makoto Kasu, Sayleap Sdoeung, Kohei Sasaki, and Akito Kuramata 読み: Makoto Kasu, Sayleap Sdoeung, Kohei Sasaki, and Akito Kuramata
題名：
Defects responsible for leakage current in β-Ga2O3 Schottky barrier diodes observed by ultrahigh sensitive emission microscopy and synchrotron X-ray topography
発表情報：
The 10th Asia-Pacific Workshop on Widegap Semiconductors 2022 (APWS2022), Taoyuan, Taiwan, November 13-18, 2022
キーワード：
概要：
Defects responsible for leakage current in β-Ga2O3 Schottky barrier diodes observed by ultrahigh sensitive emission microscopy and synchrotron X-ray topography
抄録：
Defects responsible for leakage current in β-Ga2O3 Schottky barrier diodes observed by ultrahigh sensitive emission microscopy and synchrotron X-ray topography

英語フィールド

Author：
Makoto Kasu, Sayleap Sdoeung, Kohei Sasaki, and Akito Kuramata
Title：
Defects responsible for leakage current in β-Ga2O3 Schottky barrier diodes observed by ultrahigh sensitive emission microscopy and synchrotron X-ray topography
Announcement information:
The 10th Asia-Pacific Workshop on Widegap Semiconductors 2022 (APWS2022), Taoyuan, Taiwan, November 13-18, 2022
An abstract：
Defects responsible for leakage current in β-Ga2O3 Schottky barrier diodes observed by ultrahigh sensitive emission microscopy and synchrotron X-ray topography
An abstract：
Defects responsible for leakage current in β-Ga2O3 Schottky barrier diodes observed by ultrahigh sensitive emission microscopy and synchrotron X-ray topography

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