日本語フィールド
著者:Muhidul Islam Chaman, Keigo Hoshikawa, Sayleap Sdoeung, and Makoto Kasu 読み: Muhidul Islam Chaman, Keigo Hoshikawa, Sayleap Sdoeung, and Makoto Kasu題名:High Quality Vertical Bridgman and Edge-Defined Film-Fed Growth β-Ga2O3 Bulk Crystal Investigated Using High-Resolution X-Ray Diffraction and Synchrotron X-Ray Topography発表情報:The 4th International Workshop on Gallium Oxide and Related Materials (IWGO 2022) Nanano, October 23 – 27, 2022キーワード:概要:High Quality Vertical Bridgman and Edge-Defined Film-Fed Growth β-Ga2O3 Bulk Crystal Investigated Using High-Resolution X-Ray Diffraction and Synchrotron X-Ray Topography抄録:High Quality Vertical Bridgman and Edge-Defined Film-Fed Growth β-Ga2O3 Bulk Crystal Investigated Using High-Resolution X-Ray Diffraction and Synchrotron X-Ray Topography英語フィールド
Author:Muhidul Islam Chaman, Keigo Hoshikawa, Sayleap Sdoeung, and Makoto KasuTitle:High Quality Vertical Bridgman and Edge-Defined Film-Fed Growth β-Ga2O3 Bulk Crystal Investigated Using High-Resolution X-Ray Diffraction and Synchrotron X-Ray TopographyAnnouncement information:The 4th International Workshop on Gallium Oxide and Related Materials (IWGO 2022) Nanano, October 23 – 27, 2022An abstract:High Quality Vertical Bridgman and Edge-Defined Film-Fed Growth β-Ga2O3 Bulk Crystal Investigated Using High-Resolution X-Ray Diffraction and Synchrotron X-Ray TopographyAn abstract:High Quality Vertical Bridgman and Edge-Defined Film-Fed Growth β-Ga2O3 Bulk Crystal Investigated Using High-Resolution X-Ray Diffraction and Synchrotron X-Ray Topography