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Fabrication of GaN/Diamond Heterointerface and Interfacial Chemical Bonding State for Highly Efficient Device Design

発表形態：
原著論文
主要業績：
主要業績
単著・共著：
共著
発表年月：
2021年12月
DOI：
会議属性：
指定なし
査読：
有り
リンク情報：

日本語フィールド

著者：
Jianbo Liang, Ayaka Kobayashi, Yasuo Shimizu, Yutaka Ohno, Seong-Woo Kim, Koji Koyama, Makoto Kasu, Yasuyoshi Nagai, and Naoteru Shigekawa
題名：
Fabrication of GaN/Diamond Heterointerface and Interfacial Chemical Bonding State for Highly Efficient Device Design
発表情報：
Adavanced Materials ページ: 2104564
キーワード：
概要：
Fabrication of GaN/Diamond Heterointerface and Interfacial Chemical Bonding State for Highly Efficient Device Design
抄録：
Fabrication of GaN/Diamond Heterointerface and Interfacial Chemical Bonding State for Highly Efficient Device Design

英語フィールド

Author：
Jianbo Liang, Ayaka Kobayashi, Yasuo Shimizu, Yutaka Ohno, Seong-Woo Kim, Koji Koyama, Makoto Kasu, Yasuyoshi Nagai, and Naoteru Shigekawa
Title：
Fabrication of GaN/Diamond Heterointerface and Interfacial Chemical Bonding State for Highly Efficient Device Design
Announcement information:
Adavanced Materials Page: 2104564
An abstract：
Fabrication of GaN/Diamond Heterointerface and Interfacial Chemical Bonding State for Highly Efficient Device Design
An abstract：
Fabrication of GaN/Diamond Heterointerface and Interfacial Chemical Bonding State for Highly Efficient Device Design

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