教員活動データベース

Schottky barrier diodes fabricated on high-purity type-IIa CVD diamond substrates using an all-ion-implantation process

発表形態：: 原著論文
主要業績：: 主要業績
単著・共著：: 共著
発表年月：: 2021年04月

DOI：: https://doi.org/10.35848/1347-4065/abf6e7
会議属性：: 指定なし
査読：: 有り
リンク情報：

日本語フィールド

著者：

Seiya Shigematsu, Toshiyuki Oishi, Yuhei Seki, Yasushi Hoshino, Jyoji Nakata, and Makoto Kasu 読み: Seiya Shigematsu, Toshiyuki Oishi, Yuhei Seki, Yasushi Hoshino, Jyoji Nakata, and Makoto Kasu

題名：

Schottky barrier diodes fabricated on high-purity type-IIa CVD diamond substrates using an all-ion-implantation process

発表情報：

Japanese Journal of Applied Physics 60, 050903 (2021) 巻: 60 ページ: 050903

キーワード：

概要：

Schottky barrier diodes fabricated on high-purity type-IIa CVD diamond substrates using an all-ion-implantation process

抄録：

Schottky barrier diodes fabricated on high-purity type-IIa CVD diamond substrates using an all-ion-implantation process

英語フィールド

Author：

Seiya Shigematsu, Toshiyuki Oishi, Yuhei Seki, Yasushi Hoshino, Jyoji Nakata, and Makoto Kasu

Title：

Schottky barrier diodes fabricated on high-purity type-IIa CVD diamond substrates using an all-ion-implantation process

Announcement information:

Japanese Journal of Applied Physics 60, 050903 (2021) Vol: 60 Page: 050903

An abstract：

Schottky barrier diodes fabricated on high-purity type-IIa CVD diamond substrates using an all-ion-implantation process

An abstract：

Schottky barrier diodes fabricated on high-purity type-IIa CVD diamond substrates using an all-ion-implantation process