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Polycrystalline Defects Origin of Reverse Leakage Current in HVPE (001) β-Ga2O3 SBDs Identified by High Sensitive Emission Microscope

発表形態：
一般講演（学術講演を含む）
主要業績：
主要業績
単著・共著：
共著
発表年月：
2021年03月
DOI：
会議属性：
国内会議
査読：
無し
リンク情報：

日本語フィールド

著者：
Sayleap Sdoeung, Kohei Sasaki, Katsumi Kawasaki, Jun Hirabayashi, Akito Kuramata, Makoto Kasu 読み: Sayleap Sdoeung, Kohei Sasaki, Katsumi Kawasaki, Jun Hirabayashi, Akito Kuramata, Makoto Kasu
題名：
Polycrystalline Defects Origin of Reverse Leakage Current in HVPE (001) β-Ga2O3 SBDs Identified by High Sensitive Emission Microscope
発表情報：
2021年春季応用物理学会19a-Z33-7、オンライン、2021年3月16-19日
キーワード：
Polycrystalline Defects Origin of Reverse Leakage Current in HVPE (001) β-Ga2O3 SBDs Identified by High Sensitive Emission Microscope
概要：
Polycrystalline Defects Origin of Reverse Leakage Current in HVPE (001) β-Ga2O3 SBDs Identified by High Sensitive Emission Microscope
抄録：
Polycrystalline Defects Origin of Reverse Leakage Current in HVPE (001) β-Ga2O3 SBDs Identified by High Sensitive Emission Microscope

英語フィールド

Author：
Sayleap Sdoeung, Kohei Sasaki, Katsumi Kawasaki, Jun Hirabayashi, Akito Kuramata, Makoto Kasu
Title：
Polycrystalline Defects Origin of Reverse Leakage Current in HVPE (001) β-Ga2O3 SBDs Identified by High Sensitive Emission Microscope
Announcement information:
2021年春季応用物理学会19a-Z33-7、オンライン、2021年3月16-19日
Keyword：
Polycrystalline Defects Origin of Reverse Leakage Current in HVPE (001) β-Ga2O3 SBDs Identified by High Sensitive Emission Microscope
An abstract：
Polycrystalline Defects Origin of Reverse Leakage Current in HVPE (001) β-Ga2O3 SBDs Identified by High Sensitive Emission Microscope
An abstract：
Polycrystalline Defects Origin of Reverse Leakage Current in HVPE (001) β-Ga2O3 SBDs Identified by High Sensitive Emission Microscope

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