日本語フィールド
著者:M. Kasu, S. Sayleap, H. Takaji, K. Sasaki, J. Arima, K. Kawasaki, J. Hirabayashi, A. Kuramata, 読み: M. Kasu, S. Sayleap, H. Takaji, K. Sasaki, J. Arima, K. Kawasaki, J. Hirabayashi, A. Kuramata,題名:Ultrahigh-Sensitivity Emission Microscopy Study of β-Ga2O3 Schottky Barrier Diodes in Operation発表情報:Ultrahigh-Sensitivity Emission Microscopy Study of β-Ga2O3 Schottky Barrier Diodes in Operationキーワード:Ultrahigh-Sensitivity Emission Microscopy Study of β-Ga2O3 Schottky Barrier Diodes in Operation概要:Ultrahigh-Sensitivity Emission Microscopy Study of β-Ga2O3 Schottky Barrier Diodes in Operation抄録:Ultrahigh-Sensitivity Emission Microscopy Study of β-Ga2O3 Schottky Barrier Diodes in Operation英語フィールド
Author:M. Kasu, S. Sayleap, H. Takaji, K. Sasaki, J. Arima, K. Kawasaki, J. Hirabayashi, A. Kuramata,Title:Ultrahigh-Sensitivity Emission Microscopy Study of β-Ga2O3 Schottky Barrier Diodes in OperationAnnouncement information:Ultrahigh-Sensitivity Emission Microscopy Study of β-Ga2O3 Schottky Barrier Diodes in OperationKeyword:Ultrahigh-Sensitivity Emission Microscopy Study of β-Ga2O3 Schottky Barrier Diodes in OperationAn abstract:Ultrahigh-Sensitivity Emission Microscopy Study of β-Ga2O3 Schottky Barrier Diodes in OperationAn abstract:Ultrahigh-Sensitivity Emission Microscopy Study of β-Ga2O3 Schottky Barrier Diodes in Operation