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Polycrystalline defects—origin of leakage current—in halide vapor phase epitaxial (001) β-Ga2O3 Schottky barrier diodes identified via ultrahigh sensitive emission microscopy and synchrotron X-ray topography

発表形態：
原著論文
主要業績：
主要業績
単著・共著：
共著
発表年月：
2021年01月
DOI：
10.35848/1882-0786/abde74
会議属性：
指定なし
査読：
有り
リンク情報：

日本語フィールド

著者：
Sayleap Sdoeung, Kohei Sasaki, Katsumi Kawasaki, Jun Hirabayashi, Akito Kuramata, and Makoto Kasu 読み: Sayleap Sdoeung, Kohei Sasaki, Katsumi Kawasaki, Jun Hirabayashi, Akito Kuramata, and Makoto Kasu
題名：
Polycrystalline defects—origin of leakage current—in halide vapor phase epitaxial (001) β-Ga2O3 Schottky barrier diodes identified via ultrahigh sensitive emission microscopy and synchrotron X-ray topography
発表情報：
Polycrystalline defects—origin of leakage current—in halide vapor phase epitaxial (001) β-Ga2O3 Schottky barrier diodes identified via ultrahigh sensitive emission microscopy and synchrotron X-ray topography 巻: 14 ページ: 036502
キーワード：
概要：
Polycrystalline defects—origin of leakage current—in halide vapor phase epitaxial (001) β-Ga2O3 Schottky barrier diodes identified via ultrahigh sensitive emission microscopy and synchrotron X-ray topography
抄録：
Polycrystalline defects—origin of leakage current—in halide vapor phase epitaxial (001) β-Ga2O3 Schottky barrier diodes identified via ultrahigh sensitive emission microscopy and synchrotron X-ray topography

英語フィールド

Author：
Sayleap Sdoeung, Kohei Sasaki, Katsumi Kawasaki, Jun Hirabayashi, Akito Kuramata, and Makoto Kasu
Title：
Polycrystalline defects—origin of leakage current—in halide vapor phase epitaxial (001) β-Ga2O3 Schottky barrier diodes identified via ultrahigh sensitive emission microscopy and synchrotron X-ray topography
Announcement information:
Polycrystalline defects—origin of leakage current—in halide vapor phase epitaxial (001) β-Ga2O3 Schottky barrier diodes identified via ultrahigh sensitive emission microscopy and synchrotron X-ray topography Vol: 14 Page: 036502
An abstract：
Polycrystalline defects—origin of leakage current—in halide vapor phase epitaxial (001) β-Ga2O3 Schottky barrier diodes identified via ultrahigh sensitive emission microscopy and synchrotron X-ray topography
An abstract：
Polycrystalline defects—origin of leakage current—in halide vapor phase epitaxial (001) β-Ga2O3 Schottky barrier diodes identified via ultrahigh sensitive emission microscopy and synchrotron X-ray topography

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