日本語フィールド
著者：M. Kasu, T. Oshima, K. Hanada, T. Moribayashi, A. Hashiguchi, T. Oishi, K. Koshi, K. Sasaki, A. Kuramata, and O. Ueda,題名：Crystal defects observed by the etch-pit method and their effects on Schottky-barrier-diode characteristics on β-Ga2O3発表情報：apanese Journal of Applied Physics 巻: 56 ページ: 091101キーワード：概要：抄録：酸化ガリウムの欠陥がデバイス特性に与える影響を調べた英語フィールド
Author：M. Kasu, T. Oshima, K. Hanada, T. Moribayashi, A. Hashiguchi, T. Oishi, K. Koshi, K. Sasaki, A. Kuramata, and O. Ueda,Title：Crystal defects observed by the etch-pit method and their effects on Schottky-barrier-diode characteristics on β-Ga2O3Announcement information:apanese Journal of Applied Physics Vol: 56 Page: 091101