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Study on conduction mechanism in highly doped -Ga2O3 (2̅ 0 1) single crystals grown by edge-defined film-fed growth method and their Schottky barrier diodes

発表形態:
原著論文
主要業績:
主要業績
単著・共著:
共著
発表年月:
2016年01月
DOI:
会議属性:
指定なし
査読:
有り
リンク情報:

日本語フィールド

著者:
Toshiyuki Oishi, Kazuya Harada, Yuta Koga, and Makoto Kasu
題名:
Study on conduction mechanism in highly doped -Ga2O3 (2̅ 0 1) single crystals grown by edge-defined film-fed growth method and their Schottky barrier diodes
発表情報:
Japanese Journal of Applied Physics 巻: 55 号: 3 ページ: 030305
キーワード:
概要:
抄録:

英語フィールド

Author:
Toshiyuki Oishi, Kazuya Harada, Yuta Koga, and Makoto Kasu
Title:
Study on conduction mechanism in highly doped -Ga2O3 (2̅ 0 1) single crystals grown by edge-defined film-fed growth method and their Schottky barrier diodes
Announcement information:
Japanese Journal of Applied Physics Vol: 55 Issue: 3 Page: 030305


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