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著者:K. Hirama, M. Kasu, and Yoshitaka Taniyasu題名:RF High-Power Operation of AlGaN/GaN HEMTs Epitaxially Grown on Diamond発表情報:IEEE Electron Device Lett. 巻: 33 ページ: 513-515キーワード:概要:抄録:英語フィールド
Author:K. Hirama, M. Kasu, and Yoshitaka TaniyasuTitle:RF High-Power Operation of AlGaN/GaN HEMTs Epitaxially Grown on DiamondAnnouncement information:IEEE Electron Device Lett. Vol: 33 Page: 513-515