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郭 其新クオ チーシン

所属:
シンクロトロン光応用研究センター

著書

  • 第2編 第7章 第6節 ZnTe基板とLEDへの応用; 2013年12月
    発表情報; 2013化合物半導体技術大全, 株式会社電子ジャーナル (2013).
    著者; 田中徹,斉藤勝彦, 西尾光弘,郭其新
  • Light-Emitting Diodes and Optoelectronics: New Research, Chapter : Enhanced Efficiency of ZnTe-Based Green Light-Emitting Diodes; 2012年01月
    発表情報; Nova Science Publishers, Inc. New York (2012, in press). ISBN: 978-1-62100-448-6. Nova Science Publishers, Inc. New York (2012, in press). ISBN: 978-1-62100-448-6.
    著者; Tooru Tanaka, Katsuhiko Saito, Qixin Guo, Mitsuhiro Nishio
  • ZnTe基板・応用デバイス; 2009年12月
    発表情報; 2009化合物半導体技術大全, 株式会社電子ジャーナル, 92-95.
    著者; 田中徹,西尾光弘,郭其新,小川博司
  • Fabrication and Characteristics of Nanostructured Materials Using Anodic Porous Alumina; 2006年
    発表情報; Handbook of Semiconductor Nanostructures and Nanodevices, Vol. 2, Chapter 13, pp.407-435, American Scientific Publishers ISBN: 1-58883-075-6 (2006)., 2, 407-435
    著者; Qixin Guo, Hiroshi Ogawa, and Harry Ruda
  • Advanced Materials in Electronics, Preface; 2004年
    発表情報;  Research Signpost Advanced Materials in Electronics, Research Signpost , 1-304
    著者; Qixin Guo (Editor) Qixin Guo
  • Growth and Structural Properties of InN and AlInN; 2004年
    発表情報; Advanced Materials in Electronics, Chapter 2, Research Signpost , 25-44
    著者; Qixin Guo, Mitsuhiro Nishio, and Hiroshi Ogawa
  • Some Properties of Indium Nitride; 2004年
    発表情報; Advanced Materials in Electronics, Chapter 4, Research Signpost ISBN 81-7736-223-2, 141-160
    著者; Qixin Guo, Mitsuhiro Nishio, and Hiroshi Ogawa
  • Lattice vibrational properties of InN thin films; 2004年
    発表情報; Advanced Materials in Electronics, Chapter 8, 191-214
    著者; Z.G. Qian, W.Z. Shen, H. Ogawa and Q.X. Guo
  • Optical and electrical properties of InN thin films grown by reactive magnetron sputtering; 2004年
    発表情報; Advanced Materials in Electronics, Chapter 7, pp.161-190, Research Signpost ISBN 81-7736-223-2 (2004).
    著者;  W.Z. Shen, H. Ogawa, and Q.X. Guo
  • Characteristics of reactive ion etching fo zinc telluride; 2003年
    発表情報; Recent Research Developments in Physics.4, Transworld Research Net-work, Chapter7, 123-132
    著者; Q.x.Guo, T.Tanaka, M.Nishio, and H.Ogawa
  • Low temperature epitaxia lgrowth of nitride senliconductors on GaAs substrates; 2002年
    発表情報; Vacuum Science and Technology:Nitrides as seen b y the technology; Research Signpost Chapter19, 457-468
    著者; Q. x. Guo, M. Nishio, and H.Ogawa
  • Optical properties of indium nitride and aluminum nitride; 2001年
    発表情報; Recent Advances in Applied Physics (Global Research Network) Vol. 2 pp.1-13 (2001). ISBN 81-87736-28-3
    著者; Q.X.Guo, M. Nishio, and H.Ogawa
  • Growth rate characteristics and photoluminescence properties of ZnTe grown by MOVPE and photo-assisted MOVPE; 2001年
    発表情報; Recent Advances in Applied Physics (Global Research Network) Vol. 2 pp. 69-91 (2001). ISBN 81-87736-28-3
    著者; M. Nishio, T. Tanaka, Q.X. Guo, and H. Ogawa
  • Low temperature epitaxial growth of II-VI compound semiconductors using synchrotron radiation as a light source; 1999年
    発表情報; Current topics in crystal growth research, (Research Trends) Vol. 5 pp.1-26 (1999). ISBN 81-258-0044-1
    著者; M.Nishio, Q.X.Guo, and H.Ogawa
  • Epitaxial growth and characterization of InN and AlInN; 1997年
    発表情報; Current Topics in Crystal Growth Research, (Research Trends) Vol.3 pp19-32 (1997). ISBN 81-258-0005-0
    著者; Q.X.Guo, H.Ogawa, and A.Yoshida

原著論文

  • Ultraviolet emission from MgZnO films and ZnO/MgZnO single quantum wells grown by pulsed laser deposition; 2017年12月
    発表情報; Journal of Crystal Growth, in press, 2017
    著者; Xu Wang, Zhengwei Chen, Congyu Hu, Katsuhiko Saito, Tooru Tanaka, Mitsuhiro Nishio, Qixin Guo⁠*
  • Characteristics of thulium doped gallium oxide films grown by pulsed laser deposition; 2017年11月
    発表情報; Thin Solid Films, 639, 123-126, 2017
    著者; Qixin Guo, Kazuo Nishihagi, Zhengwei Chen, Katsuhiko Saito, Tooru Tanaka
  • Ultraviolet detectors based on (GaIn)2O3 films; 2017年11月
    発表情報; Optical Materials Express,7, pp.3769-3779, 2017.
    著者; Fabi Zhang, Haiou Li, Makoto Arita, Qixin Guo*
  • The impact of dopant contents on structures, morphologies and optical properties of Eu doped Ga2O3 films on GaAs substrate; 2017年11月
    発表情報; Journal of Luminescence, in press, 2017.
    著者; Zhengwei Chen, Kazuo Nishihagi, Xu Wang, Congyu Hu, Makoto Arita, Katsuhiko Saito, Tooru Tanaka, Qixin Guo*
  • Defect induced visible-light-activated near-infrared emissions in Gd3−x−y−zYbxBiyErzGa5O12; 2017年11月
    発表情報; Journal of Applied Physics, in press, 2017
    著者; Liping Tong, Katsuhiko Saito, Qixin Guo, Han Zhou, Tongxiang Fan, Di Zhang
  • Efficient pure green emission from Er doped β-Ga2O3 films (Invited Review Article); 2017年08月
    発表情報; CrystEngComm, 19, 4448-4458, 2017.
    著者; Chen, Z., Saito, K., Tanaka, T., Guo, Q.*
  • Structural properties of Eu doped gallium oxide films; 2017年07月
    発表情報; Materials Research Bulletin, 94, pp. 170-173, 2017.
    著者; Nishihagi, K., Chen, Z., Saito, K., Tanaka, T., Guo, Q.*
  • Improved Open-Circuit Voltage and Photovoltaic Properties of ZnTeO-Based Intermediate Band Solar Cells With n-Type ZnS Layers; 2017年05月
    発表情報; IEEE Journal of Photovoltaics, 7, pp.1024-1030, 2017.
    著者; Tanaka, T., Yu, K.M., Okano, Y., Tsutsumi, S., Haraguchi, S., Saito, K., Guo, Q., Nishio, M., Walukiewicz, W.
  • Growth and characterization of Zn1-xCdxTe1-yOy highly mismatched alloys for intermediate band solar cells; 2017年05月
    発表情報; Solar Energy Materials and Solar Cells, 169, pp. 1-7, 2017.
    著者; Tanaka, T., Terasawa, T., Okano, Y., Tsutsumi, S., Saito, K., Guo, Q., Nishio, M., Yu, K.M., Walukiewicz, W.
  • Critical slowing of quantum atomic H/D ratio with features of multiferroicity in the geometrically frustrated system Co2(OD)3Cl/Co2(OH)3Cl; 2017年04月
    発表情報; Phys. Rev. B,95 (2), 024111, 2017.
    著者; Xing-Liang Xu, Dong-Dong Meng, Xu-Guang Zheng, Ichihiro Yamauchi, Isao Watanabe, and Qi-Xin Guo
  • Photoluminescence and electrical properties of P-doped ZnTe layers grown by low pressure MOVPE; 2017年04月
    発表情報; Journal of Crystal Growth, 468, pp. 666-670, 2017
    著者; Nishio, M., Saito, K. Nakatsuru, Y., Shono, T., Matsuo, Y., Tmota, A., Tanaka, T., Guo, Q.X.
  • Growth of ZnMgSeTe nearly lattice-matched to ZnTe and p-type doping by low-pressure MOVPE; 2017年04月
    発表情報; Journal of Crystal Growth, 468, pp. 671-675, 2017.
    著者; Saito, K., Nishio, M., Nakatsuru, Y., Shono, T., Matsuo, Y., Tomota, A., Tanaka, T., Guo, Q.X.
  • Temperature-dependent raman scattering in cubic (InGa)2O3 thin films; 2017年01月
    発表情報; Journal of Alloys and Compounds, 690, pp. 287-292, 2017.
    著者; Xu Wang, Zhengwei Chen, Katsuhiko Saito, Tooru Tanaka, Mitsuhiro Nishio, Qixin Guo*
  • Phase transformation of germanium by processing through high-pressure torsion: strain and temperature effects; 2017年01月
    発表情報; Philosohical Magazine Letters 97(1), pp. 27-34, 2017.
    著者; Ikoma, Y., Kumano, K., Edalati, K., Saito, K., Guo, Q., Horita, Z.
  • 直接接合技術を用いたp-ZnTe/n-ZnOヘテロ接合界面の作製と電気特性評価; 2016年09月
    発表情報; 電気学会論文誌C 136 (12), 1762-1767 (2016).
    著者; 秋山 肇, 内海 淳, 田中 徹, 齋藤勝彦, 西尾光弘, 郭 其新*
  • Toward controlling the carrier density of Si doped Ga2O3 films by pulsed laser deposition; 2016年09月
    発表情報; Applied Physics Letters, 109, 102105, 2016
    著者; Fabi Zhang , Makoto Arita , Xu Wang , Zhengwei Chen , Katsuhiko Saito , Tooru Tanaka , Mitsuhiro Nishio , Teruaki Motooka , Qixin Guo*
  • Band alignment of Ga2O3/Si heterojunction interface measured by X-ray photoelectron spectroscopy; 2016年09月
    発表情報; Applied Physics Letters, 109, 102106, 2016.
    著者; Zhengwei Chen, Kazuo Nishihagi , Xu Wang , Katsuhiko Saito , Tooru Tanaka , Mitsuhiro Nishio , Makoto Arita , Qixin Guo*
  • Observation of low voltage driven green emission from erbium doped Ga2O3 light-emitting devices; 2016年08月
    発表情報; Applied Physics Letters, 109, 022107, 2016
    著者; Zhengwei Chen, Xu Wang , Fabi Zhang , Shinji Noda , Katsuhiko Saito , Tooru Tanaka , Mitsuhiro Nishio , Makoto Arita , Qixin Guo*
  • Highly transparent conductive Ga doped ZnO films in the near-infrared wavelength range; 2016年07月
    発表情報; Journal of Materials Science: Materials in Electronic, 27, pp. 9291-9296, 2016
    著者; Zhengwei Chen; Katsuhiko Saito; Tooru Tanaka; Mitsuhiro Nishio; Qixin Guo*
  • Influence of substrate temperature on the properties of (AlGa)2O3 thin films prepared by pulsed laser deposition; 2016年06月
    発表情報; Ceramics International, 42, pp. 12783-12788, 2016.
    著者; Xu Wang, Zhengwei Chen, Fabi Zhang, Katsuhiko Saito, Tooru Tanaka, Mitsuhiro Nishio, Qixin Guo*
  • Large-scale ordering of nanoparticles using scoelastic shear processing; 2016年05月
    発表情報; Nature Communications, 7, 11661, 2016.
    著者; Qibin Zhao, Chris Finlayson, David Snoswell, Andrew Haines, Christian Schäfer, Peter Spahn, Goetz Hellmann, Andrei Petukhov, Lars Herrmann, Pierre Burdet, Paul Midgley, Simon Butler, Malcolm Mackley, Qixin Guo, and Jeremy Baumberg
  • Temperature dependence of luminescence spectra in europium doped Ga2O3 film; 2016年04月
    発表情報; Journal of Luminescence, 177, pp. 48-53, 2016.
    著者; Zhengwei Chen, Xu Wang, Fabi Zhang, Shinji Noda, Katsuhiko Saito, Tooru Tanaka, Mitsuhiro Nishio, Qixin Guo*
  • The impact of growth temperature on structural and optical properties of catalyst-free β-Ga2O3 nanostructures; 2016年03月
    発表情報; Materials Research Express, 3, 025003, 2016
    著者; Chen, Zhengwei; Wang, Xianghu; Saito, Katsuhiko; Tanaka, Tooru; Nishio, Mitsuhiro; Guo, Qixin*
  • Low pressure MOVPE growth and characterization of ZnTe homoepitaxial layers; 2016年03月
    発表情報; Physica Status Solidi (c), 13, 439-442 (2016).
    著者; Mitsuhiro Nishio, Katsuhiko Saito, Masakatsu Abiru, Eiichiro Mori, Yasuhiro Araki, Daichi Tanaka, Tooru Tanaka, and Qixin Guo
  • Influence of source transport rate upon fractions of Mg and Se in Zn1-xMgxSeyTe1–y layers grown by metalorganic vapor phase epitaxy; 2016年03月
    発表情報; physica status solidi (c), 13, 443-447 , 2016.
    著者; Katsuhiko Saito, Masakatsu Abiru, Eiichiro Mori, Yasuhiro Araki, Daichi Tanaka, Tooru Tanaka, Qixin Guo and Mitsuhiro Nishio
  • Temperature dependence of Raman scattering in β-(AlGa)2O3 thin films; 2016年02月
    発表情報; AIP Advances, 6, 015111, 2016
    著者; Xu Wang, Zhengwei Chen , Fabi Zhang , Katsuhiko Saito , Tooru Tanaka , Mitsuhiro Nishio , Qixin Guo*
  • Effects of dopant contents on structural, morphological and optical properties of Er doped Ga2O3 films; 2016年01月
    発表情報; Superlattices and Microstructures, 90, 207-214, 2016.
    著者; Zhengwei Chen; Xu Wang; Shinji Noda; Katsuhiko Saito; Tooru Tanaka; Mitsuhiro Nishio; Makoto Arita; Qixin Guo*
  • Compositional dependence of optical transition energies in highly mismatched Zn1-xCdxTe1-yOy alloys; 2016年01月
    発表情報; Applied Physics Express, 9, 021202, 2016.
    著者; Tooru Tanaka, Kosuke Mizoguchi, Toshiki Terasawa, Yuuki Okano, Katsuhiko Saito, Qixin Guo, Mitsuhiro Nishio, Kin Man Yu, Wladek Walukiewicz
  • Low temperature growth of europium doped Ga2O3 luminescent films; 2015年12月
    発表情報; Journal of Crystal Growth, 430, 28-33, 2015.
    著者; Zhengwei Chen, Katsuhiko Saito, Tooru Tanaka, Mitsuhiro Nishio, Makoto Arita, Qixin Guo*
  • Allotropic phase transformation and photoluminescence of germanium nanograins processed by high-pressure torsion; 2015年11月
    発表情報; Journal of Materials Science, 58, 138-143, 2015.
    著者; Yoshifumi Ikoma, Takamitsu Toyota; Yoshimasa Ejiri; Katsuhiko Saito; Qixin Guo; Zenji Horita
  • Electrical properties of Si doped Ga2O3 films grown by pulsed laser deposition; 2015年11月
    発表情報; Journal of Materials Science: Materials in Electronics, 26, 9624-9629, 2015.
    著者; Fabi Zhang; Katsuhiko Saito; Tooru Tanaka; Mitsuhiro Nishio Nishio; Qixin Guo*
  • Photoluminescence characteristics of ZnTe bulk crystal and ZnTe epilayer grown on GaAs substrate by MOVPE; 2015年11月
    発表情報; Chin. Phys. B, 24, 124207-1-6. 2015.
    著者; Haiyan Lv, Lei Zhang, Qi Mu, Ziwu Ji, Yuanjie Lv, Zhihong Feng, Xiangang Xu, Qixin Guo*
  • Deuterium ordering found in new ferroelectric compound Co2(OD)3Cl; 2015年07月
    発表情報; Materials Research Express 2, 076101-1-7, 2015.
    著者; Meng, Dong-Dong; Zheng, Xu-Guang; Liu, Xiaodong; Xu, Xingliang; Guo, Qixin
  • Electronic structure of β-Ga2O3 single crystals investigated by hard X-ray photoelectron spectroscopy; 2015年07月
    発表情報; Applied Physics Letters,107, 022109-1-5, 2015.
    著者; Guoling Li , Fabi Zhang , Yi-Tao Cui , Hiroshi Oji , J.-Y. Son , Qixin Guo*
  • Energy band bowing parameter in MgZnO alloys; 2015年07月
    発表情報; Applied Physics Letters, 107, 022111-1-5, 2015
    著者; Xu Wang , Katsuhiko Saito , Tooru Tanaka , Mitsuhiro Nishio , Takashi Nagaoka , Makoto Arita , Qixin Guo*
  • Enhanced electrochemical performance of Ti substituted P2-Na2/3Ni1/4Mn3/4O2 cathode material for sodium ion batteries; 2015年05月
    発表情報; , Electrochimica Acta 170, pp. 171-181, 2015
    著者; Wenwen Zhao, Akinobu Tanaka, Kyoko Momosaki, Shinji Yamamoto, Fabi Zhang, Qixin Guo, Hideyuki Noguchi
  • The impacts of growth temperature on morphologies, compositions and optical properties of Mg-doped ZnO nanomaterials by chemical vapor deposition; 2015年02月
    発表情報; Journal of Alloys and Compounds, 622, pp. 440-445, 2015.
    著者; X.H. Wang, L.Q. Huang, L.J. Niu, R.B. Li, D.H. Fan, F.B. Zhang, Z.W. Chen, X. Wang and Q.X. Guo
  • Compositions of Mg and Se, surface morphology, roughness and Raman property of Zn1−xMgxSeyTe1−y layers grown at various substrate temperatures or dopant transport rates by MOVPE; 2015年02月
    発表情報; Journal of Crystal Growth, 414, pp. 114-118, 2015.
    著者; Mitsuhiro Nishio, Katsuhiko Saito, Kensuke Urata, Yasuhiro Okamoto, Daichi Tanaka, Yasuhiro Araki, Masakatsu Abiru, Eiichiro Mori, Tooru Tanaka, Qixin Guo
  • Toward the understanding of annealing effects on (GaIn)2O3 films; 2015年02月
    発表情報; Thin Solid Films, 578, pp. 1-6, 2015.
    著者; Fabi Zhang, Hideki Jan, Katsuhiko Saito, Tooru Tanaka, Mitsuhiro Nishio, Takashi Nagaoka, Makoto Arita, Qixin Guo*
  • Lower temperature growth of single phase MgZnO films in all Mg content range; 2015年01月
    発表情報; Journal of Alloys and Compounds, 627, pp. 383-387, 2015.
    著者; Xu Wang, Katsuhiko Saito, Tooru Tanaka, Mitsuhiro Nishio, Qixin Guo*
  • Terahertz surface emission from Cu2ZnSnSe4 thin film photovoltaic material excited by femtosecond laser pulses; 2014年12月
    発表情報; Applied Physics Letters, 105, 231104-1-3, 2014.
    著者; Zhenyu Zhao, Gudrun G Niehues, Stefan Funkner, Elmer Surat Estacio, Qifeng Han, Kohji Yamamoto, Jingtao Zhang, Wangzhou Shi, Qixin Guo, Masahiko Tani
  • Wide bandgap engineering of (AlGa)2O3 films; 2014年11月
    発表情報; Applied Physics Letters, 105, 162107-1-5, 2014.
    著者; Fabi Zhang, Katsuhiko Saito, Tooru Tanaka, Mitsuhiro Nishio, Makoto Arita, and Qixin Guo*
  • Biomass-derived hierarchical porous CdS/M/TiO2 (M = Au, Ag, pt, pd) ternary heterojunctions for photocatalytic hydrogen evolution; 2014年10月
    発表情報; International Journal of Hydrogen Energy, 39, 16293-16301, 2014.
    著者; Zhou, H., Pan, J., Ding, L., Tang, Y., Ding, J., Guo, Q., Fan, T., Zhang, D.
  • Electrical properties and emission mechanisms of Zn-doped β-Ga2O3 films; 2014年07月
    発表情報; Journal of Physics and Chemistry of Solids, 75, 1201-1204, 2014.
    著者; X.H. Wang, F.B. Zhang, K. Saito, T. Tanaka, M. Nishio and Q.X. Guo*
  • Thermal annealing impact on crystal quality of (GaIn)2O3 alloys; 2014年07月
    発表情報; Journal of Alloys and Compounds, 614, 173-176, 2014
    著者; Fabi Zhang, Katsuhiko Saito, Tooru Tanaka, Mitsuhiro Nishio, and Qixin Guo*
  • Fabrication of nanograined silicon by high-pressure torsion; 2014年06月
    発表情報; Journal of Material Science,49 (19), pp. 6565-6569, 2014. DOI 10.1007/s10853-014-8250-z
    著者;  Yoshifumi Ikoma, Kazunori Hayano, Kaveh Edalati, Katsuhiko Saito, Qixin Guo, Zenji Horita, Toshihiro Aoki, David J. Smith
  • Investigation of the Multiferroic Transition in CuO Single Crystal using Dielectric and Raman Spectroscopy Measurements; 2014年06月
    発表情報; JPS Conf. Proc. 3, 014039 (2014), http://dx.doi.org/10.7566/JPSCP.3.014039
    著者; Dongdong MENG, Xu-Guang ZHENG, Xingliang XU, Jun NAKAUCHI, Masayoshi FUJIHALA, Xiaodong LIU, Qixin GUO, Makoto MAKI
  • Leaf-inspired hierarchical porous CdS/Au/N-TiO2 heterostructures for visible light photocatalytic hydrogen evolution; 2014年04月
    発表情報; Applied Catalysis B: Environmental, 147, 221-228, 2014.
    著者; Zhou, H., Ding, L., Fan, T., Ding, J., Zhang, D., Guo, Q.
  • Nanograin formation of GaAs by high-pressure torsion; 2014年03月
    発表情報; Philosophical Magazine Letters, 94, 1 , 2014.
    著者; Yoshifumi Ikoma, Yoshimasa Ejiri, Kazunori Hayano, Katsuhiko Saito, Qixin Guo and Zenji Horita
  • The effects of substrate temperature upon the compositions of Mg and Se in Zn1-xMgxSeyTe1-y layer grown by MOVPE; 2014年03月
    発表情報; physica status solidi (c), 11, 1202-1205, 2014.
    著者; M. Nishio, K. Saito, R. Ito, K. Tanaka, K. Urata, Y. Nakamura, T. Tanaka, Q.X. Guo
  • Wide bandgap engineering of (GaIn)2O3 films; 2014年03月
    発表情報; Solid State Communications, 186, pp. 28-31, 2014.
    著者; Fabi Zhang, Katsuhiko Saito, Tooru Tanaka, Mitsuhiro Nishio, and Qixin Guo*
  • Fabrication of ZnO/ZnTe heterojunction by using a Room Temperature Direct Bonding technology; 2014年02月
    発表情報; physica status solidi (c), 11, 1218-1220, 2014.
    著者; Hajime AKIYAMA, Katsuhiko SAITO, Tooru TANAKA, Mitsuhiro NISHIO, and Qixin GUO*
  • Growth of InGaN layers on (111) silicon substrates by reactive sputtering; 2014年01月
    発表情報; Journal of Alloys and Compounds, 587, pp. 217-221, 2014.
    著者; Qixin Guo, Tomoya Nakao, Takaya Ushijima, Wangzhou Shi, Feng Liu, Katsuhiko Saito, Tooru Tanaka, and Mitsuhiro Nishio
  • Photogenerated Current By Two-Step Photon Excitation in ZnTeO Intermediate Band Solar Cells with n-ZnO Window Layer; 2014年01月
    発表情報; IEEE Journal of Photovoltaics, 4 (1), 6642092, pp. 196-201, 2014.
    著者; Tanaka, T., Miyabara, M., Nagao, Y., Saito, K., Guo, Q., Nishio, M., Yu, K.M., Walukiewicz, W.
  • Structural and optical properties of Ga2O3 films on sapphire substrates by pulsed laser deposition; 2014年01月
    発表情報; Journal of Crystal Growth, 387, pp. 96-100, 2014.
    著者; F.B. Zhang, K. Saito, T. Tanaka, M. Nishio, and Q.X. Guo*
  • Recombination dynamics and carrier lifetimes in highly mismatched ZnTeO alloys; 2013年12月
    発表情報;  Applied Physics Letters 103, 261905 (2013); doi: 10.1063/1.4858968
    著者; Yan-Cheng Lin, Ming-Jui Tasi, Wu-Ching Chou, Wen-Hao Chang, Wei-Kuo Chen, Tooru Tanaka, Qixin Guo, and Mitsuhiro Nishio
  • Effect of reactor pressure upon photoluminescence properties of ZnTe homoepitaxial layer; 2013年09月
    発表情報; OPTOELECTRONICS AND ADVANCED MATERIALS – RAPID COMMUNICATIONS Vol. 7, No. 9-10, September - October 2013, p. 730 - 733
    著者; SHULAI HUANG, ZIWU JI, LEI ZHANG, MINGSHENG XU, SHUANG QU, XIANGANG XU, QIXIN GUO
  • Raman spectroscopic study of the frustrated spin 1/2 antiferromagnet clinoatacamite; 2013年06月
    発表情報; Journal of Physics: Condensed Matter, Volume 25, 256003, (2013). doi:10.1088/0953-8984/25/25/256003
    著者; Xiao-Dong Liu, Xu-Guang Zheng, Dong-Dong Meng, Xing-Liang Xu and Qi-Xin Guo
  • Surface morphologies and photoluminescence properties of undoped and P-doped ZnTe layers grown by metalorganic vapor phase epitaxy; 2013年05月
    発表情報; Journal of Crystal Growth,370, 348-352, 2013.
    著者; Nishio, M., Hayashida, Y., Saito, K., Tanaka, T., Guo, Q.
  • Effects of annealing treatment upon electrical and photoluminescence properties of phosphorus-doped ZnMgTe epilayers grown by metalorganic vapor phase epitaxy; 2013年05月
    発表情報; Journal of Crystal Growth, 370, 342-347, 2013.
    著者; Mitsuhiro Nishio, Keita Kai, Ryota Fujiki, Katsuhiko Saito, Tooru Tanaka, Qixin Guo
  • Effect of substrate temperature on optical properties and strain distribution of ZnTe epilayer on (100) GaAs substrates; 2013年05月
    発表情報; Thin Solid Films, 536, pp. 240-243, 2013
    著者; Lei Zhang, Ziwu Ji*, Shulai Huang, Huining Wang, Hongdi Xiao, Yujun Zheng, Xiangang Xu, Yun Lu, Qixin Guo**
  • Low Temperature Raman Spectroscopic Study on γ-Cu2(OH)3Cl; 2013年05月
    発表情報; Applied Mechanics and Materials,441-342, pp.320-323.
    著者; Xiao Dong Liu, Dong Dong Meng, Xu Guang Zheng, Xing Liang Xu, Qi Xin Guo
  • Epitaxial Growth of ZnTe Layers on ZnO Bulk Substrates by Metalorganic Vapor Phase Epitaxy; 2013年04月
    発表情報; Japanese Journal of Applied Physics, 52, 040206, 2013.
    著者; Hajime AKIYAMA, Hiroyuki HIRANO, Katsuhiko SAITO, Tooru TANAKA, Mitsuhiro NISHIO, and Qixin GUO*
  • Effects of oxygen gas pressure on properties of iron oxide films grown by pulsed laser deposition; 2013年03月
    発表情報; Journal of Alloys and Compounds, 552 (2013) 1–5.
    著者; Qixin Guo, Wangzhou Shi, Feng Liu, Makoto Arita, Yoshifumi Ikoma, Katsuhiko Saito, Tooru Tanaka, and Mitsuhiro Nishio
  • Structural integration design for enhanced photoluminescence in butterfly scales; 2013年03月
    発表情報; Soft Matter, 9, 2614-2620, 2013. DOI: 10.1039/C2SM27220B
    著者; Kuilong Yu , Shuai Lou , Jian Ding , Di Zhang , Qixin Guo and Tongxiang Fan
  • Molecular beam epitaxial growth of ZnCdTeO epilayers for intermediate band solar cells; 2013年03月
    発表情報; Journal of Crystal Growth 378, pp. 259-262 (2013).
    著者; Tooru Tanaka, Yasuhiro Nagao, Tomohiro Mochinaga, Katsuhiko Saito, Qixin Guo, Mitsuhiro Nishio, Kin M. Yu, and Wladek Walukiewicz,
  • Development of ZnTe-based solar cells; 2013年03月
    発表情報; Materials Science Forum, 750, 80-83, 2013.
    著者; Tooru Tanaka, Masaki Miyabara, Katsuhiko Saito, Qixin Guo, Mitsuhiro Nishio, Kin M. Yu, and Wladek Walukiewicz
  • Photocurrent induced by two-photon excitation in ZnTeO intermediate band solar cells; 2013年03月
    発表情報; Applied Physics Letters, 102, 052111, 2013.
    著者; Tooru Tanaka, Masaki Miyabara , Yasuhiro Nagao , K Saito , Qixin Guo , Mitsuhiro Nishio , Kin Man Yu , Wladek Walukiewicz
  • Band alignment of ZnTe/GaAs heterointerface investigated by synchrotron radiation photoemission spectroscopy; 2013年03月
    発表情報; Applied Physics Letters, 102, 092107, 2013.
    著者; Qixin Guo*, Kazutoshi Takahashi, Katsuhiko Saito, Hajime Akiyama, Tooru Tanaka, and Mitsuhiro Nishio
  • Photo-electrochemical Properties of Titanium Dioxide Thin Films Prepared by Reactive RF Sputtering Method; 2013年02月
    発表情報; Materials Science Forum Vol. 750 (2013) pp 248-251.
    著者; Makoto Arita, Yu Tabata, Hiroki Sakamoto, and Qixin Guo
  • Raman-scattering probe of anharmonic effects due to temperature and composition in InGaN; 2013年02月
    発表情報; Phys. Status Solidi B 250, No. 2, 329–333 (2013) / DOI 10.1002/pssb.201248374
    著者;  J. F. Kong, W. Z. Shen, and Q. X. Guo
  • Impact of Radio Frequency Powers on GaInN Film Growth by Magnetron Reactive Sputtering; 2012年11月
    発表情報; Japanese Journal of Applied Physics, 51 (2012) 118004.
    著者; Qixin GUO, Wangzhou SHI, Feng LIU,Tomoya NAKAO, Katsuhiko SAITO, Tooru TANAKA, and Mitsuhiro NISHIO
  • Phase transformation and nanograin refinement of silicon by processing through high-pressure torsion; 2012年10月
    発表情報; Applied Physics Letters, 101 (2012) 121908.
    著者; Yoshifumi Ikoma, Kazunori Hayano , Kaveh Edalati , K Saito , Qixin Guo , Zenji Horita
  • Effects of substrate temperature upon optical properties of ZnTe epilayers grown on (100) GaAs substrates by MOVPE; 2012年08月
    発表情報; physica status solidi (a), 209 (2012) pp. 2041-2044.
    著者; Shulai Huang, Ziwu Ji, Mingwen Zhao, Lei Zhang, Hongyu Guo, Baoli Liu, Xiangang Xu, and Qixin Guo
  • Characterization of epitaxial ZnTe layers grown on GaAs substrates by transmission electron microscopy and photoluminescence; 2012年05月
    発表情報; Journal of Vacuum Science and Technology A, 30, 021508 (2012).
    著者; Fabi Zhang, Yoshifumi Ikoma, Jinping Zhang, Ke Xu, Katsuhiko Saito, and Qixin Guo*
  • Existence and removal of Cu2Se second phase in coevaporated Cu2ZnSnSe4 thin films; 2012年04月
    発表情報; Journal of Applied Physics, 111, 053522 (2012).
    著者; Tooru Tanaka, Tatsuya Sueishi, Katsuhiko Saito, Qixin Guo, Mitsuhiro Nishio, Kin M. Yu, Wladek Walukiewicz
  • Bacteria-directed construction of hollow TiO2 micro/nanostructures with enhanced photocatalytic hydrogen evolution activity; 2012年03月
    発表情報; Optics Express, 20, A340-A350, 2012.
    著者; Han Zhou, Tongxiang Fan, Jian Ding, Di Zhang, and Qixin Guo
  • Growth of ZnTe layers on (111) GaAs substrates by metalorganic vapor phase epitaxy; 2012年02月
    発表情報; Journal of Crystal Growth, 341 (2012) 7–11.
    著者; Qixin Guo, Hajime Akiyama, Yuta Mikuriya, Katsuhiko Saito, Tooru Tanaka, and Mitsuhiro Nishio
  • Effects of substrate temperature upon the properties of ZnMgTe layer grown by MOVPE; 2012年01月
    発表情報; Applied Surface Science, 258 (2012) 2137-2140.
    著者; K. Saito, Y. Inoue, Y. Hayashida, T. Tanaka, Q.X. Guo and M. Nishio
  • Epitaxial growth of ZnO layers on (111) GaAs substrates by laser molecular beam epitaxy; 2012年01月
    発表情報; Thin Solid Films 520 (2012) 2663–2666.
    著者; Jian Ding; Di Zhang; Takaharu Konomi; Katsuhiko Saito; Qixin Guo*
  • Molecular beam epitaxial growth and optical properties of highly mismatched ZnTe1-xOx alloys; 2012年01月
    発表情報; Applied Physics Letters 100 (2012)011905 (3pages).
    著者;  T. Tanaka, S. Kusaba, T. Mochinaga, K. Saito, Q. Guo, M. Nishio, K. M. Yu, and W. Walukiewicz
  • Raman Band Redshifting of α-Cu2(OH)3Cl with Decreasing the Temperature; 2012年01月
    発表情報; Advanced Materials Research Vols. 430-432 (2012) pp 391-394
    著者; Xiaodong Liu, Xingliang Xu, Dongdong Meng, Masayoshi Fujihala, Xuguang Zheng, Zhengwei Chen, and Qixin Guo
  • Local Laser Heating Effect on Raman Spectroscopy of β-Co2(OH)3Br; 2012年01月
    発表情報; Advanced Materials Research Vols. 430-432 (2012) pp 566-569.
    著者; Xiaodong Liu, Jing Lu, Masayoshi Fujihala, Dongdong Meng, Xingliang Xu, Xuguang Zheng, Zhengwei Chen, and Qixin Guo
  • Raman Spectral Properties of β-Co2(OH)3Cl down to the Liquid Nitrogen Temperature; 2012年01月
    発表情報; Advanced Materials Research Vols. 430-432 (2012) pp 1257-1260.
    著者; Jing Lu, Xiaodong Liu, Xingliang Xu, Masayoshi Fujihala, Dongdong Meng, Xuguang Zheng, Zhengwei Chen, and Qixin Guo
  • Spectral properties of Botallackite-structure Alpha-Cu2(OH/D)3Br at room temperature.; 2012年01月
    発表情報; Adv. Mater. Res., 391-392, 1493-1497 (2012).
    著者; X. D. Liu, D. D. Meng, X. G. Zheng, and Q. X. Guo.
  • Art of blackness in butterfly wings as natural solar collector; 2011年12月
    発表情報; Soft Matter, 2011, 7, 11433-11439.
    著者; Qibin Zhao, Xingmei Guo, Tongxiang Fan, Jian Ding, Di Zhang and Qixin Guo
  • Growth and characterization of Fe3O4 films; 2011年12月
    発表情報; Materials Research Bulletin 46 (2011) 2212–2216.
    著者; Jian Ding, Di Zhang, Makoto Arita, Yoshifumi Ikoma, Kazuki Nakamura, Katsuhiko Saito, Qixin Guo*
  • A new method to prepare high-surface-area N–TiO2/activated carbon; 2011年11月
    発表情報; Materials Letters 65 (2011) 326–328.
    著者; D. Huang, Y. Miyamoto, J. Ding, J. Gu, S. Zhu, Q. Liu, T. Fan, Q. Guo, D. Zhang
  • Preparation and characterization of high-surface-area TiO2/activated carbon by low-temperature impregnation; 2011年11月
    発表情報; Separation and Purification Technology 78 (2011) 9–15.
    著者; D. Huang, Y. Miyamoto, T. Matsumoto, T. Tojo, T. Fan, J. Ding, Q. Guo, D. Zhang
  • Mid-infrared and Raman spectral analysis of geometrically frustrated natural atacamite; 2011年09月
    発表情報; Guang Pu Xue Yu Guang Pu Fen Xi/Spectroscopy and Spectral Analysis, 31 (2011) 2431-2436.
    著者; Tao, W.-J., Liu, X.-D., Zheng, X.-G., Meng, D.-D., Guo, Q.-X.
  • Preparation of high-surface-area activated carbon from Zizania latifolia leaves by one-step activation with K2CO3/rarefied air; 2011年08月
    発表情報; Journal of Materials Sicence 46,5064–5070,(2011). DOI 10.1007/s10853-011-5429-4
    著者; D. C. Huang, Q. L. Liu, W. Zhang, J. Ding, J. J. Gu, S. M. Zhu, Q. X. Guo, D. Zhang
  • Raman and Mid-IR Spectral Analysis of the Atacamite-Structure Hydroxyl/Deuteroxyl Nickel Chlorides Ni2(OH/D)3Cl; 2011年08月
    発表情報; CHIN. PHYS. LETT. Vol. 28, 087805-1-4, (2011)
    著者; LIU Xiao-Dong, Hagihala Masato, ZHENG Xu-Guang, MENG Dong-Dong, GUO Qi-Xin
  • Temperature Dependence of Raman Scattering in AlInN; 2011年07月
    発表情報; Journal of Applied Physics, 109, 113514 (2011).
    著者; L. F. Jiang, J. F. Kong, W. Z. Shen, and Q. X. Guo
  • Raman and mid-IR spectroscopic study of geometrically frustrated hydroxyl cobalt halides at room temperature.; 2011年07月
    発表情報; Chin. Phys. B 20(7), 077801 (2011).
    著者; X. D. Liu, D. D. Meng, M Hagihala, X. G. Zheng, and Q. X. Guo.
  • Optical properties of AlInN thin films (in Chinese); 2011年06月
    発表情報; J. Infrared Millim. Waves, 30, 207-211, 2011
    著者; L. F. Jiang, W. Z. Shen, and Q. X. Guo
  • Electronic structure of GaInN semiconductors investigated by x-ray absorption spectroscopy; 2011年05月
    発表情報; APPLIED PHYSICS LETTERS 98, 181901-1-3, (2011)
    著者; Q. X. Guo,H. Senda, K. Saito, T. Tanaka, M. Nishio, J. Ding, T. X. Fan, D. Zhang, X. Q. Wang, S. T. Liu, B. Shen, and R. Ohtani
  • Preparation of Al2O3-ZrO2 Composite Ceramic Coating by a New Sol-gel Method and It’s Structure; 2011年04月
    発表情報; Surface Technology, 40, 1-3 (2011) (in Chinese).
    著者; ZHANG Fa-bi, LI Ming-wei, QIN Zu-jun, GUO Qi-xin
  • Effect of gas flow rate on surface morphology and crystal quality of ZnTe epilayers grown on GaAs substrates; 2011年03月
    発表情報; Materials Research Bulletin, 46, 551–554, 2011.
    著者; Qixin Guo, Masaki Nada, Yaliu Ding, Katsuhiko Saito, Tooru Tanaka, and Mitsuhiro Nishio
  • Mid-infrared spectroscopic properties of geometrically frustrated basic cobalt chlorides; 2011年03月
    発表情報; Acta Phys. Sin. 60, 037803, 2011 (in Chinese)
    著者; Liu Xiao-Dong, Tao Wan-Jun, Zheng Xu-Guang, Hagihala Masato, Meng Dong-Dong, Zhang Sen-Lin, and Guo Qi-Xin
  • Trimeric Hydrogen Bond in Geometrically Frustrated Hydroxyl Cobalt Halogenides; 2011年01月
    発表情報; Chinese Physics Letters 28 (1): 017803, 2011
    著者; LIU Xiao-Dong, Hagihala Masato, ZHENG Xu-Guang, TAO Wan-Jun, MENG Dong-Dong, ZHANG Sen-Lin, GUO Qi-Xin
  • Mid-IR and Raman Spectral Properties of Geometrically Frustrated Atacamite Hydroxyl Copper Chloride; 2011年
    発表情報; Advanced Materials Research Vols. 146-147, 972-975, 2011
    著者; Wanjun Tao, Xiaodong Liu, Xuguang Zheng, Dongdong Meng, and Qixin Guo
  • Mid-IR and Raman Spectral Properties of Hydroxyl/Deuteroxyl Cobalt Chlorides; 2011年
    発表情報; Advanced Materials Research Vols. 146-147, 1194-1197, 2011
    著者; Xiaodong Liu, Dongdong Meng, Xuguang Zheng, Masato Hagihala and Qixin Guo
  • Mid-IR and Raman Spectral Properties of Clinoatacamite-structure Basic Copper Chlorides; 2011年
    発表情報; Advanced Materials Research Vols. 146-147, 1202-1205, 2011.
    著者; Xiaodong Liu, Dongdong Meng, Xuguang Zheng, Masato Hagihala and Qixin Guo
  • Super Black and Ultrathin Amorphous Carbon Film Inspired by Anti-reflection Architecture in Butterfly Wing; 2011年
    発表情報; Carbon,49, 877-883, 2011.
    著者; Qibin Zhao, Tongxiang Fan, Jian Ding, Di Zhang, Qixin Guo, Masao Kamada
  • Effect of VI/II ratio upon photoluminescence and electrical properties of phosphorus-doped ZnTe films grown by metalorganic vapor phase epitaxy; 2011年
    発表情報; Thin Solid Films 520 (2011)743-746.
    著者; M. Nishio, K. Kaia, K. Saito, T. Tanaka, Q.Guo
  • Vibrational spectroscopic properties of botallackite-structure basic copper halides; 2011年
    発表情報; Vibrational Spectroscopy 56 (2011) 177-183.
    著者; Xiao-Dong Liu, Masato Hagihala, Xu-Guang Zheng, and Qi-Xin Guo
  • Structural and optical properties of porous iron oxide; 2011年
    発表情報; Solid State Communications 151 (2011) 802-805.
    著者; Jian Ding, Tongxiang Fan, Di Zhang, Katsuhiko Saito, and Qixin Guo*
  • Temperature dependence of electrical properties for P-doped ZnMgTe bulk crystals of high quality grown by Bridgman method Original Research Article; 2010年12月
    発表情報; Journal of Crystal Growth 318 (2011) 524-527.
    著者; Mitsuhiro Nishio, Kyosuke Hiwatashi, Katsuhiko Saito, Tooru Tanaka, Qixin Guo
  • Bio-Inspired Functional Materials Templated From Nature Materials (Review Paper); 2010年12月
    発表情報; KONA Powder and Particle Journal No.28, 116-130, (2010)
    著者; Di Zhang, Wang Zhang, Jiajun Gu, Shenming Zhu, Huilan Su, Qinglei, Liu, Tongxiang Fan, Jian Ding and Qixin Guo
  • Synchrotron radiation XAFS investigation on wood structure hierarchical porous ZnO; 2010年09月
    発表情報; Journal of Functional Materials (in press), 2010.
    著者; ZHU Peng-bo, DING Jian, GUO Cui-Ping, FAN Xue-lu, LIU Zhao-ting, FAN Tong-Xiang, ZHANG Di, GUO Qi-Xin, and KAMADA Masao
  • Properties of InGaN Films Grown by Reactive Sputtering; 2010年08月
    発表情報; Japanese Journal of Applied Physics, 49, 081203-1-4, 2010.
    著者; Qixin GUO, Yuta KUSUNOKI, Yaliu DING, Tooru TANAKA, and Mitsuhiro NISHIO
  • Low-temperature buffer layer effects on the quality of ZnTe epilayers grown on sapphire substrates; 2010年07月
    発表情報; Journal of Applied Physics, 107, 123525-1-5, 2010
    著者; Qixin Guo, Masaki Nada, Yaliu Ding, Tooru Tanaka, and Mitsuhiro Nishio,
  • Photoelectron spectroscopic study on electronic structure of butterfly-templated ZnO; 2010年06月
    発表情報; Physica Status Solidi (c), 7, 1574-1576 (2010).
    著者; Masao Kamada, Harue Sugiyama, Kazutoshi Takahashi, Qixin Guo, Jiajun Gu, Wang Zhang, Tongxiang Fan, and Di Zhang
  • Temperature dependence of photoluminescence from P-doped ZnMgTe bulk crystals of high quality grown by Bridgman method; 2010年06月
    発表情報; Physica Status Solidi (c), 7, 1495-1497 (2010).
    著者; K. Saito, S. Shimao, T. Tanaka, Q.X. Guo, and M. Nishio
  • Artificial inorganic leaf for efficient photochemica hydrogen production inspired by natural photosynthesis; 2010年01月
    発表情報; Advanced Materials, 22, 951-956, 2010.
    著者; Han Zhou, Xufan Li, Tongxiang Fan, Frank E. Osterloh, Jian Ding, Erwin M. Sabio, Di Zhang, Qixin Guo
  • Influence of composition ratio on properties of Cu2ZnSnS4 thin films fabricated by co-evaporation; 2010年
    発表情報; Thin Solid Films, 518, S29-S33, 2010
    著者; Tooru Tanaka, Akihiro Yoshida, Daisuke Saiki, Katsuhiko Saito, Qixin Guo, Mitsuhiro Nishio and Toshiyuki Yamaguchi
  • Enhanced Light Output from ZnTe Light Emitting Diodes by Utilizing Thin Film Structure; 2009年12月
    発表情報; Appl. Phys. Express 2 (2009) 122101 (3 pages)
    著者; Tooru Tanaka, Katsuhiko Saito, Mitsuhiro Nishio, Qixin Guo, and Hiroshi Ogawa
  • Improvement in the Quality of ZnTe Epilayers Grown on GaAs Substrates by Introducing a Low-temperature Buffer Layer; 2009年08月
    発表情報; Japanese Journal of Applied Physics, 48, 080208 (3pp), 2009.
    著者; Qixin Guo, Yusuke Sueyasu, Tooru Tanaka, Mitsuhiro Nishio, and J.C. Cao
  • Temperature Dependence of the Optical Properties of AlInN; 2009年07月
    発表情報; Journal of Applied Physics, 106, 013515 (8pp), 2009
    著者; L. F. Jiang, W. Z. Shen, and Qixin Guo
  • Heteroepitaxial growth of InN layers on (111) silicon substrates; 2009年05月
    発表情報; Journal of Crystal Growth 311, 2783–2786, 2009.
    著者; Qixin Guo, Masahiko Ogata, Yaliu Ding, Tooru Tanaka, and Mitsuhiro Nishio
  • Bacteria-based controlled assembly of metal chalcogenide hollow nanostructures with enhanced light-harvesting and photocatalytic properties; 2009年04月
    発表情報; Nanotechnology 20 085603 (10pp), 2009 doi:10.1088/0957-4484/20/8/085603
    著者; Han Zhou, Tongxiang Fan, Ting Han, Xufan Li, Jian Ding, Di Zhang, Qixin Guo, and Hiroshi Ogawa
  • Iridescent large-area ZrO2 photonic crystals using butterfly as templates; 2009年02月
    発表情報; Applied Physics Letters, 94, 053901 (3pp), (2009)
    著者; Yu Chen, Jiajun Gu, Shenming Zhu, Tongxiang Fan, Di Zhang, Qixin Guo
  • Novel Photoanode Structure Templated from Butterfly Wing Scales; 2009年02月
    発表情報; Chem. Mater., 2009, 21 (1), 33-40
    著者; Wang Zhang, Di Zhang, Tongxiang Fan, Jiajun Gu, Jian Ding, Hao Wang, Qixin Guo, and Hiroshi Ogawa
  • Enhanced Ligh-Harvesting and Photocatalytic Properties in Morph-TiO2 from Green-Leaf Biotemplates; 2009年01月
    発表情報; Advanced Functional Materials, 19, 45-56 (2009).
    著者; Xufan Li, Tongxiang Fan, Han Zhou, Suk-Kwun Chow, Wang Zhang, Di Zhang, Qixin Guo and Hiroshi Ogawa
  • Effect of Temperature on Raman Scattering in Hexagonal ZnMgO for Optoelectronic Applications; 2009年01月
    発表情報; Solid State Commnuications 149, 10-13 (2009).
    著者; J. F. Kong, W. Z. Shen, Y. W. Zhang , X. M. Li, and Q. X. Guo
  • Scattering times in the two-dimensional electron gas of AlxGa1−xN/AlN/GaN
    heterostructures; 2009年01月
    発表情報; Journal of Physics D: Applied Physcis 42 (2009) 045112 (5pp).
    著者; Xiuxun Han, Yoshio Honda, Tetsuo Narita, Masahito Yamaguchi, Nobuhiko Sawaki, Tooru Tanaka, Qixin Guo and Mitsushiro Nishio
  • Biosynthesis of cathodoluminescent zinc oxide replicas using butterfly (Papilio paris) wing scales as templates; 2009年
    発表情報; Materials Science and Engineering C, 29, 92-96, (2009).
    著者; Zhang, W., Zhang, D., Fan, T., Ding, J., Gu, J., Guo, Q., Ogawa, H.
  • Surface morphology and optical properties of ZnTe epilayers on GaAs substrates by metalorganic vapor phase epitaxy; 2009年
    発表情報; Journal of Crystal Growth, 311 (2009), pp. 970-973
    著者; Qixin Guo, Yusuke Sueyasu, Yaliu Ding, Tooru Tanaka, and Mitsuhiro Nishio
  • ZnTe based light emitting diodes fabricated by solid-state diffusion of Al through an Al oxide layer; 2009年
    発表情報; Japanese Journal of Applied Physics, 48, 022203-1-5, 2009.
    著者; Tooru Tanaka, Mitsuhiro Nishio, Qixin Guo, and Hiroshi Ogawa
  • Biomimetic photocatalyst system derived from the natural prototype in leaves for efficient visible-light-driven catalysis; 2009年
    発表情報; Journal of Materials Chemistry, 19, 2695-2703, 2009
    著者; HAN ZHOU, TONGXIANG FAN, XUFAN LI, DI ZHANG, QIXIN GUO, AND HIROSHI OGAWA
  • Fabrication of ZnTe Light Emitting Diode by Al Thermal Diffusion through Surface Oxidation Layer; 2008年11月
    発表情報; Japanese Journal of Applied Physics 47, 8408-8410, (2008).
    著者; Tooru Tanaka, Mitsuhiro Nishio, Qixin Guo, and Hiroshi Ogawa
  • Giant Seebeck coefficient decrease in polycrystalline materials with highly anisotropic band structures: Implications in seeking high-quality thermoelectric materials; 2008年09月
    発表情報; Solid State Communications, 148, 10-13, 2008.
    著者; J.-J. Gu, D. Zhang, and Q.X. Guo
  • Structural and Optical Properties of AlInN Films Grown on Sapphire Substrates; 2008年01月
    発表情報; Japanese Journal of Applied Physics, 47, 612-615 (2008).
    著者; Qixin GUO, Tooru TANAKA, Mitsuhiro NISHIO, and Hiroshi OGAWA
  • Synthesis and cathodoluminescence properties of porous wood (fir)-templated zinc oxide; 2008年
    発表情報; Ceramics International, 34, 69-74 (2008).
    著者; Zhaoting Liu, Tongxiang Fan, Jian Ding, Di Zhang, Qixin Guo and Hiroshi Ogawa
  • Fabrication of hierarchical ZnO films with interwoven porous conformations by a bioinspired templating technique; 2008年
    発表情報; Chemical Engineering Journal, 137, 428-435 (2008).
    著者; Qun Dong, Huilan Su, Chunfu Zhang, Di Zhang, Qixin Guo
  • Synthesis of biomorphic Al2O3 based on natural plant templates and assembly of Ag nanoparticles controlled within the nanopores; 2008年
    発表情報; Microporous and Mesoporous Materials, 108, 204-212 (2008)
    著者; Tongxiang Fan, Xufan Li, Jian Ding, Di Zhang and Qixin Guo
  • In situ synthesis and photoluminescence of QD-CdS on silk fibroin fibers at room temperature; 2008年
    発表情報; Nanotechnology, 19, 025601 (6pp), (2008).
    著者; Huilan Su, Jie Han, Qun Dong, Di Zhang, Qixin Guo
  • Biogenic synthesis and photocatalysis of Pd-PdO nanoclusters reinforced hierarchical TiO2 films with interwoven and tubular conformations; 2008年
    発表情報; Biomacromolecules, 9, 499-504 (2008).
    著者; Huilan Su, Qun Dong, Jie Han, Di Zhang, Qixin Guo
  • Microfabrication of ZnO on PTFE Template Patterned by Synchrotron Radiation; 2008年
    発表情報; Journal of Korean Physical Society 53, 2796-2799 (2008).
    著者; Q.X. GUO, Y. MITSUISHI, T. TANAKA, M. NISHIO, H. OGAWA, and Y.Z. HUANG
  • Electron-LO-phonon interaction in wurtzite GaN quantum wells
    under a magnetic field; 2008年
    発表情報; Physica B 403, 2567–2571 (2008).
    著者; J. C. Cao, J. T. Lu, and Qixin Guo
  • Biogenic synthesis of hierarchical hybrid nanocomposites and patterning of silver nanoparticles; 2008年
    発表情報; Materials Chemistry and Physics 110 (2008) 160–165
    著者; Qun Dong, Huilan Su, Wei Cao, Jie Hana, Di Zhang, Qixin Guo
  • Improvement of MOVPE grown ZnTe:P layers by annealing treatment; 2008年
    発表情報; Journal of Physics: Conference Series 100, 042019 (2008).
    著者; K. Saito, K. Fujimoto, K. Yamaguchi, T. Tanaka, M. Nishio, Q. X. Guo, and H. Ogawa
  • Epitaxial growth of ZnMgTe with a wide composition range on ZnTe substrate by molecular beam epitaxy; 2008年
    発表情報; Journal of Physics: Conference Series 100, 042018 (2008).
    著者; Tooru Tanaka, Katsuhiko Saito, Mitsuhiro Nishio, Qixin Guo, Hiroshi Ogawa,
  • Growth of undoped ZnMgTe layers by metalorganic vapour phase epitaxy; 2008年
    発表情報; Journal of Physics: Conference Series 100, 042028 (2008).
    著者; K. Saito, D. Kouno, T. Tanaka, M. Nishio, Q. X. Guo, and H. Ogawa
  • Fabrication of a ZnTe light emitting diode by Al thermal diffusion into a p-ZnTe epitaxial layer on a p-ZnMgTe substrate; 2008年
    発表情報; Journal of Materials Science: Materials in Electronics, 20, 505-509, 2008.
    著者; Tooru Tanaka , Katsuhiko Saito, Mitsuhiro Nishio, Qixin Guo and Hiroshi Ogawa
  • Post-annealing effect upon electrical and optical properties of MOVPE grown P-doped ZnTe homoepitaxial layers; 2008年
    発表情報; Journal of Materials Science: Materials in Electronics, 20, 264-267, 2008.
    著者; Katsuhiko Saito, Kouji Yamaguchi, Tooru Tanaka, Mitsuhiro Nishio, Qixin Guo and Hiroshi Ogawa,
  • Structural properties of ZnTe epilayers grown on (0001) α-Al2O3 substrates by metalorganic vapor phase epitaxy; 2007年11月
    発表情報; Japanese Journal of Applied Physics. 46, 7221-7224 (2007).
    著者; Qixin GUO, Yusuke KUME, Jiajun GU, Di ZHANG, Tooru TANAKA, Mitsuhiro NISHIO, and Hiroshi OGAWA
  • Determination of the Third- and Fifth-Order Nonlinear Refractive Index in InN Thin Films; 2007年11月
    発表情報; Applied Physics Letters, 91, 221902 -1-3 (2007).
    著者; Z. Q. Zhang, W. Q. He, C. M. Gu, W. Z. Shen, H. Ogawa and Q. X. Guo
  • Growth Properties of Polytetrafluoroethylene Films by Synchrotron Radiation Ablation; 2007年10月
    発表情報; JapaJapanese Journal of Applied Physics, 46, 6782-6785 (2007).
    著者; Qixin GUO, Takashi KUGINO, Yusuke KUME, Yoshiaki MITSUISHI, Tooru TANAKA, Mitsuhiro NISHIO, and Hiroshi OGAWA
  • Reactive sputter deposition of AlInN thin films; 2007年03月
    発表情報; Journal of Crystal Growth, 300, 151-154 (2007).
    著者; Q.X. Guo, Y. Okazaki, Y. Kume, T. Tanaka, M. Nishio, and H. Ogawa
  • Structural and optical properties of ZnMgO films grown by metal organic decomposition; 2007年02月
    発表情報; Japanese Journal of Applied Physics, 46, 560-562 (2007).
    著者; Qixin GUO, Tooru TANAKA, Mitsuhiro NISHIO, Hiroshi OGAWA
  • Observation of ultra-broadband terahertz emission from ZnTe films grown by metaloganic vapor epitaxy; 2007年01月
    発表情報; Solid State Communications, 141, 188-191 (2007).
    著者; Qixin Guo, Yusuke Kume, Yuji Fukuhara, Tooru Tanaka, Mitsuhiro Nishio, Hiroshi Ogawa, Masahiro Hiratsuka, Masahiko Tani, and Masanori Hangyo
  • Growth characteristics of ZnMgTe layer on ZnTe substrate by metalorganic vapor phase epitaxy; 2007年
    発表情報; Journal of Crystal Growth, 298, 449-452 (2007).
    著者; Katsuhiko Saito, Tetsuo Yamashita, Daisuke Kouno, Tooru Tanaka, Mitsuhiro Nishio, Qixin Guo, and Hiroshi Ogawa
  • Effects of dopant transport rate upon photoluminescence and electrical properties of ZnTe in atmospheric pressure MOVPE using tris-dimethlaminophosphorus; 2007年
    発表情報; Journal of Crystal Growth, 298, 437-440 (2007)
    著者; Tooru Tanaka, Mitsuhiro Nishio, Kazuki Hayashida, Kenji Fujimoto, Qixin Guo, and Hiroshi Ogawa
  • Low-pressure metalorganic vapor phase epitaxy growth of ZnTe; 2007年
    発表情報; Journal of Crystal Growth, 298, 441-444 (2007).
    著者; Yusuke Kume, Qixin Guo, Tooru Tanaka, Mitsuhiro Nishio, Hiroshi Ogawa, and Wenzhong Shen
  • Growth and Characterization of ZnTe epilayers on (100)GaAs substrates by metalorganic vapor phase epitaxy; 2007年
    発表情報; Journal of Crystal Growth, 298, 445-448 (2007)
    著者; Yusuke Kume, Qixin Guo, Yuji Fukuhara, Tooru Tanaka, Mitsuhiro Nishio, and Hiroshi Ogawa
  • Electronic band structures and transport properties of wurtzite indium nitride grown by metal-organic vapor phase epitaxy; 2007年
    発表情報; Journal of Crystal Growth, 298, 394-398 (2007).
    著者; W.Z. Shen, Z.W. Jia, J. Chen, H.B. Ye, H. Ogawa and Q.X. Guo
  • Synthesis and characterizations of hierarchical biomorphic titania oxide by a bio-inspired bottom-up assembly solution technique; 2007年
    発表情報; Journal of Solid State Chemistry, 180, 949-955 (2007).
    著者; Qun Dong, Huilan Su, Wei Cao, Di Zhang, Qixin Guo, Yijian Lai
  • Assembly of metallic nanoparticles with controllable size in nanopores of biomorphic oxide fibers templated by cotton tissue; 2007年
    発表情報; Journal of Materials Research 22, 755-762 (2007).
    著者; Xufan Li, Tongxiang Fan, Di Zhang, Qixin Guo, and Hiroshi Ogawa
  • Assembly and formation of biomorphic tin dioxide via a biomimetic sol-gel approach involving glycoprotein; 2007年
    発表情報; European Journal of Inorganic Chemistry, 2007, 2265-2273 (2007).
    著者; Qun Dong, Huilan Su, Wei Cao, Di Zhang, Qixin Guo, and Fangying Zhang
  • Study of Al thermal diffusion in ZnTe by secondary ion mass spectroscopy,; 2007年
    発表情報; physica status solidi (b), 244, 1685-1690 (2007).
    著者; Tooru Tanaka, Norihiro Murata, Katsuhiko Saito, Qixin Guo, Mitsuhiro Nishio, and Hiroshi Ogawa,
  • Design of Beamline BL9 at Saga Light Source,; 2007年
    発表情報; AIP series of conference proceedings, Vol.879 (2007) p.559.
    著者; Tooru Tanaka, Hiroshi Ogawa, Masao Kamada, Mitsuhiro Nishio, Masataka Masuda, Qixin Guo, Kazuki Hayashida, Yuzi Kondo, Teruaki Motooka, Daisuke Yoshimura, Hiroyuki Setoyama, and Toshihiro Okajima,
  • Synthesis of ZnFe2O4/ SiO2 Composites Derived from Diatomite Template; 2007年
    発表情報; Bioinspiration & Biomimetics, 2, 30-35(2007).
    著者; Zhaoting Liu, Tongxiang Fan, Han Zhou, Di Zhang, Xiaolu Gong, Qixin Guo and Hiroshi Ogawa
  • Preparation of Porous Fe from Biomorphic Fe2O3 Precursors with Wood Templates; 2007年
    発表情報; Materials Transactions, 48, 878-881 (2007).
    著者; Zhaoting Liu, Tongxiang Fan, Jiajun Gu, Di Zhang, Qixin Guo, Jiaqiang Xu
  • Microstructure and Infrared Absorption of Biomorphic Chromium Oxides Templated by Wood Tissues; 2006年
    発表情報; Journal of the American Ceramic Society, 89, 3511-3515 (2006).
    著者; Tongxiang Fan, Xufan Li, Zhaoting Liu, Jiajun Gu, Qixin Guo, Di Zhang
  • Critical point transitions of wurtzite indium nitride; 2006年
    発表情報; SOLID STATE COMMUNICATIONS, 137, 1/2, 49-52
    著者; Shen, W. Z / Pu, X. D / Chen, J / Ogawa, H / Guo, Q. X
  • Synthesis and hierarchical pore structure of biomorphic manganese oxide derived from woods; 2006年
    発表情報; JOURNAL- EUROPEAN CERAMIC SOCIETY, 26, 16, 3657-3664
    著者; Li, X / Fan, T / Liu, Z / Ding, J / Guo, Q. X / Zhang, D
  • Fabrication of ZnO microtubes with adjustable nanopores on the walls by the templating of butterfly wing scales; 2006年
    発表情報; NANOTECHNOLOGY, 17, 3, 840-844
    著者; Zhang, W / Zhang, D / Fan, T / Ding, J / Guo, Q. X / Ogawa, H
  • Growth and Depth Dependence of Visible Luminescence in Wurtzite Indium Nitride Epilayers; 2006年
    発表情報; Applied Physics Letters, 88,151904 (1-3) (2006)
    著者; X. D. Pu, W. Z. Shen, Z. Q. Zhang H. Ogawa, and Q. X. Guo
  • Growth of boron-doped ZnTe homoepitaxial layer by metalorganic vapor phase epitaxy; 2006年
    発表情報; PHYSICA STATUS SOLIDI C CONFERENCES, 3, 4, 833-836
    著者; Saito, K / Yamashita, T / Tanaka, T / Nishio, M / Guo, Q. X / Ogawa, H
  • Phosphorus-doped ZnMgTe bulk crystals grown by Vertical Bridgman Method; 2006年
    発表情報; PHYSICA STATUS SOLIDI C CONFERENCES, 3, 4, 812-816
    著者; Saito, K / Kinoshita, K / Tanaka, T / Nishio, M / Guo, Q. X / Ogawa, H
  • Effects of substrate temperature upon photoluminescence and electrical properties of ZnTe in atmospheric pressure MOVPE using tris-dimethlaminophosphorus; 2006年
    発表情報; phys. stat. sol. (c) 3, 1172-1175 (2006).
    著者; Kazuki Hayashida, Tooru1, Tanaka, Mitsuhiro Nishio, Qixin Guo, T.Tanigawa and Hiroshi Ogawa
  • Effect of Surface Treatment on Properties of ZnTe LED Fabricated by Al Thermal Diffusion; 2006年
    発表情報; phys. stat. sol. (b) 243, 959-962 (2006).
    著者; T. Tanaka, Y. Hosi, T. Kuroiwa, K. Hayashida, K. Saito, M. Nishio, Q. Guo and H. Ogawa
  • Morphosynthesis of hierarchical ZnO replica using butterfly wing scales as templates; 2006年
    発表情報; MICROPOROUS AND MESOPOROUS MATERIALS, 92, 1/3, 227-233
    著者; Zhang, W / Zhang, D / Fan, T / Ding, J / Guo, Q. X / Ogawa, H
  • Cathodoluminescence study of anodic nanochannel alumina; 2006年
    発表情報; JOURNAL OF LUMINESCENCE, 119/120, 253-257
    著者; Guo, Q. X / Hachiya, Y / Tanaka, T / Nishio, M / Ogawa, H
  • Growth properties of AlN films on sapphire substrates by reactive sputtering; 2006年
    発表情報; VACUUM, 80, 7, 716-718
    著者; Guo, Q. X / Tanaka, T / Nishio, M / Ogawa, H
  • Reactive Ion Etching of Zinc Oxide Using Methane and Hydrogen Gases; 2006年
    発表情報; JAPANESE JOURNAL OF APPLIED PHYSICS PART 1 REGULAR PAPERS SHORT NOTES AND REVIEW PAPERS, 45, 11, 8597-8599
    著者; Guo, Q. X / Uesugi, N / Tanaka, T / Nishio, M / Ogawa, H
  • Electron Dephasing in Wurtzite Indium Nitride Thin Films; 2006年
    発表情報; Applied Physics Letters, 89, 232107-1-3 (2006).
    著者; Z. W. Jia, W. Z. Shen, H. Ogawa and Q. X. Guo
  • Biomimetic zinc oxide replica with structural color using butterfly (Ideopsis similis) wings as templates; 2006年
    発表情報; Bioinspiration & Biomimetics, 1, 89–95 (2006)
    著者; Wang Zhang, Di Zhang, Tongxiang Fan, Jian Ding, Jiajun Gu, Qixin Guo, and Hiroshi Ogawa
  • Fabrication of Cu2ZnSnS4 thin films by co-evaporation; 2006年
    発表情報; PHYSICA STATUS SOLIDI C CONFERENCES, 3, 8, 2844-2847
    著者; Tanaka, T / Kawasaki, D / Nishio, M / Guo, Q. X / Ogawa, H
  • Optical and electrical properties of phosphorus-doped ZnMgTe bulk crystals grown by Bridgman method; 2006年
    発表情報; PHYSICA STATUS SOLIDI C CONFERENCES, 3, 8, 2673-2676
    著者; Saito, K / So, G / Tanaka, T / Nishio, M / Guo, Q. X / Ogawa, H
  • Optical properties of InN with stoichoimetry violation and indium clustering; 2005年
    発表情報; Phys. Stat. Sol. (a), 202, 377-382 (2005).
    著者; T. V. Shubina, S. V. Ivanov, V. N. Jmerik, M. M. Glazov, A. P. Kalvarskii, M. G. Tkachman, A. Vasson, J. Leymarie, A. Kavokin, H. Amano, I. Akasaki, K. S. A. Butcher, Q. Guo, B. Monemar, and P.S. Kop'ev
  • Extended X-ray absorption fine structure of porous morph-genetic silicon carbide; 2005年
    発表情報; Nuclear Instruments and Methods in Physics Research Section B 238, 138-140 (2005)
    著者; J. Ding, B. Sun, T. Fan, D. Zhang, M. Kamada, H. Ogawa, and Q. X. Guo,
  • Microscopic investigations of aluminum nitride thin films grown by low-temperature reactive sputtering; 2005年
    発表情報; THIN SOLID FILMS, 483, 1/2, 16-20
    著者; Guo, Q. X / Yoshitugu, M / Tanaka, T / Nishio, M / Ogawa, H
  • Fabrication of highly ordered nanocrystalline Si:H nanodots for the application of nanodevice arrays; 2005年
    発表情報; JOURNAL OF CRYSTAL GROWTH, 283, 3/4, 339-345
    著者; Ding, G. Q / Shen, W. Z / Zheng, M. J / Xu, W. L / He, Y. L / Guo, Q. X
  • Synchrotron radiation-excited etching of ZnTe using Ar gas; 2005年
    発表情報; NUCLEAR INSTRUMENTS AND METHODS IN PHYSICS RESEARCH SECTION B, 238, 1/4, 115-118
    著者; Tanaka, T / Kume, Y / Hayashida, K / Saito, K / Nishio, M / Guo, Q. X / Ogawa, H
  • Effects of dry etching processes on optical properties of ZnTe surface layers in ultraviolet region; 2005年
    発表情報; APPLIED SURFACE SCIENCE, 249, 1/4, 216-221
    著者; Wu, S / Ren, Z. Q / Shen, W. Z / Ogawa, H / Guo, Q. X
  • Generation and Detection of Terahertz Radiation on Reactive Ion Etched ZnTe Surfaces; 2005年
    発表情報; Acta Physica Sinica, 54, 4938-4943 (2005).
    著者; L. He, C. Gu, W. Shen, J. Cao, H. Ogawa, and Q.X. Guo,
  • X-ray absorption near-edge fine structure study of AlInN semiconductors.; 2005年
    発表情報; Applied Physics letters. 86, 111911-(1-3) (2005)
    著者; Q.X. Guo, J. Ding, T. Tanaka, M. Nishio, and H. Ogawa
  • Preparation of Cu2ZnSnS4 thin films by hybrid sputtering; 2005年
    発表情報; JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 66, 11, 1978-1981
    著者; Tanaka, T / Nagatomo, T / Kawasaki, D / Nishio, M / Guo, Q. X / Wakahara, A / Yoshida, A / Ogawa, H
  • Temperature Dependence of Raman Scattering in Hexagonal Indium Nitride Films; 2005年
    発表情報; Journal of Applied Physics, 98, 033527-1-6 (2005)
    著者; X. D. Pu, W. Z. Shen, H. Ogawa, and Q. X. Guo
  • Observation of visible luminescence from indium nitride at room temperature; 2005年
    発表情報; Applied Physics Letters, 86, 231913-(1-3) (2005).
    著者; Q. X. Guo , T. Tanaka, M. Nishio, H. Ogawa, X. D. Pu and W. Z. Shen
  • Recovery from Dry Etching Damage in ZnTe by Thermal Annealing; 2005年
    発表情報; Japanese Journal of Applied Physics, 44, L863-L865 (2005).
    著者; Qixin GUO, Yusukei KUME, Tooru TANAKA, Mitsuhiro NISHIO and Hiroshi OGAWA
  • Strong Room-Temperature UV Luminescence from ZnO Grown by Metal Organic Decomposition (Brief Communication); 2005年
    発表情報; JAPANESE JOURNAL OF APPLIED PHYSICS PART 1 REGULAR PAPERS SHORT NOTES AND REVIEW PAPERS, 44, 12, 8451-8452
    著者; Guo, Q. X / Kume, Y / Tanaka, T / Nishio, M / Ogawa, H / Yoshida, A
  • Growth condition dependence of structure and surface morphology of GaN films on (111) GaAs substrates prepared by reactive sputtering; 2004年
    発表情報; Journal of Vacuum Science and Technology (A), 22, 1290-1292
    著者; Q.X. Guo, W.J. Lu, D. Zhang, T. Tanaka, M. Nishio, H. Ogawa
  • Effects of structure and processing technique on the properties of thermal spray WC-Co and NiCrAl/WC-Co coatings; 2004年
    発表情報; MATERIALS SCIENCE AND ENGINEERING A, 371, 1/2, 187-192
    著者; Wang, J / Li, K / Shu, D / He, X / Sun, B / Guo, Q. X / Nishio, M / Ogawa, H
  • Generation of Terahertz Radiation via Optical Rectification and Electro-optic Detection in ZnTe Crystal; 2004年
    発表情報; Acta Physica Sinica, 53, 250-255
    著者; R. Liu, C. Gu, L. He, S. Wu, W. Shen, H. Ogawa, and Q. Guo
  • Micro-Raman study of hexagonal InN thin films grown by reactive sputtering on GaAs; 2004年
    発表情報; JOURNAL OF CRYSTAL GROWTH, 262, 1/4, 435-441
    著者; Chen, J / Shen, W. Z / Wang, J. B / Ogawa, H / Guo, Q. X
  • Temperature Dependence of Refractive Index in InN Thin Films Grown by Magnetron Sputtering; 2004年
    発表情報; Journal of Applied Physics , 96, 3199-3205
    著者; H. P. Zhou, W. Z. Shen, H. Ogawa, and Q.X. Guo
  • Critical point transitions of wurtzite AIN in the vacuum-ultraviolet spectral range; 2004年
    発表情報; APPLIED PHYSICS LETTERS, 84, 24, 4866-4868
    著者; Chen, J / Shen, W. Z / Ogawa, H / Guo, Q. X
  • Experimental studies of lattice dynamical properties in indium nitride (Review paper); 2004年
    発表情報; Journal of Physics: Condensed Matter, 16, R 381-R 414
    著者; Z.G. Qian, W.Z. Shen, H. Ogawa, and Q.X. Guo
  • Electrical properties of semiconductor InN (Review paper); 2004年
    発表情報; Progress in Physics, (in Chinese), 24, 195-215
    著者; W. Pan, W.Z. Shen, H. Ogawa, and Q.X. Guo
  • Temperature effects on optical properties of InN thin films; 2004年
    発表情報; Applied Physics A: Materials Science and Processing, 78, 89-93
    著者; L.F. Jiang, W.Z. Shen, H.F. Yang, H. Ogawa, and Q.X. Guo
  • Selective Dry Etching of Zinc Telluride Using Aluminum Mask; 2004年
    発表情報; Japanese Journal of Applied Physics, 43, 4157-4158
    著者; Q.X. Guo, Y. Matsumoto, T. Tanaka, M. Nishio, and H. Ogawa
  • Synchrotron Radiation - Excited Etching of ZnTe; 2004年
    発表情報; AlP series of conference proceedings, 705, 1154-1157
    著者; Tooru Tanaka, Yusuke Kume, Sinji Tokunaga, Kazuki Hayashida, Mitsuhiro Nishio, Qixin Guo, and Hiroshi Ogawa
  • Electroluminescence and photoluminescence characteristics in ZnTe LED fabricated by Al thermal diffusion; 2004年
    発表情報; PHYSICA STATUS SOLIDI C CONFERENCES, 1, 4, 1026-1029
    著者; Tanaka, T / Matsuno, Y / Kume, Y / Nishio, M / Guo, Q. X / Ogawa, H
  • Growth of phosphorus-doped ZnTe layers by metalorganic vapour phase epitaxy using tris-dimethylaminophosphorus; 2004年
    発表情報; physica status solidi (c), , 1, 718-721
    著者; Kazuki Hayashida, Tooru Tanaka, Mitsuhiro Nishio, Qixin Guo, and Hiroshi Ogawa
  • 佐賀県立九州シンクロトロン光研究センター事業の現状と利用計画; 2004年
    発表情報; 電気学会論文集C(IEEJ Transactions on Electronics, Information and Systems), 124-C, 7, 1345
    著者; 小川博司,鎌田雅夫,西尾光弘,増田正孝,郭 其新,田中 徹,近藤祐治,林田和樹,本岡輝昭
  • Specific Contact Resistance of Pd Electroless to p-type ZnTe; 2004年
    発表情報; International Conference on Electrical Engineering 2004 Conference Proceedings , 1, 666-669
    著者; Mitsuhiro Nishio, Tooru Tanaka, Qixin Guo, Hiroshi Ogawa
  • Generation of Terahertz Radiation via Optical Rectification and Electro-optic Detection in ZnTe Crystal; 2004年
    発表情報; Acta Physica Sinica, 53, 250-255 (2004)
    著者; R. Liu, C. Gu, L. He, S. Wu, W. Shen, H. Ogawa, and Q. Guo
  • Micro-Raman study of hexagonal InN thin films grown by reactive sputtering on GaAs; 2004年
    発表情報; JOURNAL OF CRYSTAL GROWTH, 262, 1/4, 435-441
    著者; Chen, J / Shen, W. Z / Wang, J. B / Ogawa, H / Guo, Q. X
  • Lattice Vibrational Properties of Semiconductor InN (Review paper); 2003年
    発表情報; Progressin Physics, 23, 257-283
    著者; Z. G. Qian, W. Z. Shen, H.Ogawa, and Q.x.Guo
  • Characterization of damage in reactive ion etched ZnTe; 2003年
    発表情報; Journal of Vacuum Science and Technology A21, 59-61
    著者; Qixin Guo, Yuichi Matsumoto, Tooru Tanaka, Mituhiro Nishio, and Hiroshi Ogawa
  • Low-temperature growth of aluminum nitride on sapphire substrates; 2003年
    発表情報; JOURNAL OF CRYSTAL GROWTH, 257, 1/2, 123-128
    著者; Guo, Q. X / Yahata, K / Tanaka, T / Nishio, M / Ogawa, H
  • Optical Bandgap Energy of Wurtzite In-Rich AlInN Alloys; 2003年
    発表情報; JAPANESE JOURNAL OF APPLIED PHYSICS PART 2 LETTERS, 42, 2B, L141-L143
    著者; Guo, Q. X / Tanaka, T / Nishio, M / Ogawa, H
  • Fabrication of Indium Nitride Nanodots Using Anodic Alumina Templates; 2003年
    発表情報; JAPANESE JOURNAL OF APPLIED PHYSICS PART 2 LETTERS, 42, 5B, L508-L510
    著者; Guo, Q. X / Mei, X / Ruda, H / Tanaka, T / Nishio, M / Ogawa, H
  • Temperature dependence of aluminum nitride reflectance spectra in vacuum ultraviolet region; 2003年
    発表情報; Solid State Communications, 1260, 601-604
    著者; Qixin Guo, Mitsuhiro Nishio,Hirishi Ogawa, Akira Yoshida
  • Growth and characterization of reactive sputtered AlInN films; 2003年
    発表情報; Phys. Stat. Sol.0, 2533-2536
    著者; Q.X. Guo, K. Yahata, T. Tanaka, M. Nishio, and H. Ogawa
  • Grain refinement of Al-Si alloy (A356) by melt thermal treatment; 2003年
    発表情報; JOURNAL OF MATERIALS PROCESSING TECHNOLOGY, 141, 1, 29-34
    著者; Wang, J / He, S / Sun, B / Guo, Q. X / Nishio, M
  • The apparent viscosity of fine particle reinforced composite melt; 2003年
    発表情報; JOURNAL OF MATERIALS PROCESSING TECHNOLOGY, 136, 1/3, 60-63
    著者; Wang, J / Guo, Q. X / Nishio, M / Ogawa, H / Shu, D / Li, K / He, S / Sun, B
  • Highly-ordered GaAs/AlGaAs quantum-dot arrays on GaAs (001) substrates grown by molecular-beam epitaxy using nanochannel alumina masks; 2003年
    発表情報; APPLIED PHYSICS LETTERS, 82, 6, 967-969
    著者; Mei, X / Blumin, M / Sun, M / Kim, D / Wu, Z. H / Ruda, H. E / Guo, Q. X
  • Raman investigation of disorder in InN thin films grown by reactive sputtering on GaAs; 2003年
    発表情報; Journal of Applied Physics, 93, 2643-2647
    著者; Z.G. Qian, W.Z. Shen, H. Ogawa and Q.X. Guo
  • Temperature dependence of the optical properties in hexagonal AlN; 2003年
    発表情報; JOURNAL OF APPLIED PHYSICS, 94, 9, 5704-5709
    著者; Jiang, L. F / Shen, W. Z / Ogawa, H / Guo, Q. X
  • Capacitance characteristics in InN thin films grown by reactive sputtering on GaAs; 2003年
    発表情報; Japanese Journal ofApplied Physics , 42, 5551-5556
    著者; W. Pan, Z.G. Qian, W.z. Shen, H. Ogawa, and Q.X. Guo
  • Study of far-infrared reflection and Raman scattering spectra of reactive ion etched ZnTe; 2003年
    発表情報; Chinese Physics (Journal of the Chinese Physical Society (B)), 12, 1026-1032
    著者; S. Wu, W.Z. Shen, H. Ogawa, and Q.X. Guo
  • Effects of dry etching processes on effective refractive index of ZnTe surface layers in terahertz region; 2003年
    発表情報; JOURNAL OF APPLIED PHYSICS, 94, 6, 3800-3804
    著者; Wu, S / Ren, Z. Q / Shen, W. Z / Ogawa, H / Guo, Q. X
  • Effects of Dry Etching Processes on Exciton and Polariton Characteristics in ZnTe; 2003年
    発表情報; Journal of Applied Physics. , 94, 7144-7148
    著者; J. H. Sun, W.B. Xie, W. Z. Shen, H. Ogawa, and Q.X. Guo,
  • The apparent viscosity of fine particle reinforced composite melt; 2003年
    発表情報; JOURNAL OF MATERIALS PROCESSING TECHNOLOGY, 136, 1/3, 60-63
    著者; Wang, J / Guo, Q. X / Nishio, M / Ogawa, H / Shu, D / Li, K / He, S / Sun, B
  • Growth and optical properties of high-quality ZnTe homoepitaxial layers by metalorganic vapor phase epitaxy; 2003年
    発表情報; JOURNAL OF CRYSTAL GROWTH, 248, 43-49
    著者; Tanaka, T / Hayashida, K / Wang, S / Guo, Q. X / Nishio, M / Ogawa, H
  • Photoluminescence properties of ZnTe homoepitaxial layers grown by synchrotron -radiation-excited growth using nitrogen carrier gas,; 2003年
    発表情報; Nuclear Instruments and Methods in Physics Research Section A, , 199, 356-360
    著者; Tooru Tanaka, Kazuki Hayashida, Shanli Wang, Qixin Guo, Mitsuhiro Nishio, and Hiroshi Ogawa,
  • Fabrication of ZnTe Light-Emitting Diodes Using Bridgman-Grown Substrates; 2003年
    発表情報; JAPANESE JOURNAL OF APPLIED PHYSICS PART 2 LETTERS, 42, 4A, L362-L364
    著者; Tanaka, T / Kume, Y / Nishio, M / Guo, Q. X / Ogawa, H / Yoshida, A
  • Photoluminescence of iodine-doped ZnTe homoepitaxial layer grown by metalorganic vapor phase epitaxy; 2003年
    発表情報; JOURNAL OF APPLIED PHYSICS, 93, 9, 5302-5306
    著者; Tanaka, T / Hayashida, K / Nishio, M / Guo, Q. X / Ogawa, H
  • Photoluminescence of Cl-doped ZnTe epitaxial layer grown by atmospheric pressure metalorganic vapor phase epitaxy; 2003年
    発表情報; JOURNAL OF APPLIED PHYSICS, 94, 3, 1527-1530
    著者; Tanaka, T / Hayashida, K / Nishio, M / Guo, Q. X / Ogawa, H
  • Bandtail characteristics in InN thin films; 2002年
    発表情報; APPLIED PHYSICS LETTERS, 80, 12, 2063-2065
    著者; Shen, W. Z / Jiang, L. F / Yang, H. F / Meng, F. Y / Ogawa, H / Guo, Q. X
  • Fabrication of ZnTe Nanohole Arrays by Reactive Ion Etching Using Anodic Alumina Templates; 2002年
    発表情報; JAPANESE JOURNAL OF APPLIED PHYSICS PART 2 LETTERS, 41, 2A, L118-120
    著者; Guo, Q. X / Tanaka, T / Nishio, M / Ogawa, H / Mei, X / Ruda, H
  • Heteroepitaxial growth of gallium nitride on (111)GaAs substrates by radio frequency magnetron sputtering; 2002年
    発表情報; JOURNAL OF CRYSTAL GROWTH, 237/239, 2, 1079-1083
    著者; Guo, Q. X / Okada, A / Kidera, H / Tanaka, T / Nishio, M / Ogawa, H
  • Effect of GaN buffer layer on crystallinity of InN grown on (111)GaAs; 2002年
    発表情報; JOURNAL OF CRYSTAL GROWTH, 237/239, 2, 1032-1036
    著者; Guo, Q. X / Okada, A / Kidera, H / Tanaka, T / Nishio, M / Ogawa, H
  • Photoluminescence spectra of arsenic-doped ZnTe layers grown by MOVPE using triethylarsine,; 2002年
    発表情報; Journal of Crystal Growth 237/239, 1580-1584 (2002).
    著者; Kazuki Hayashida, Tooru Tanaka, Mitsuhiro Nishio, Yong Chang, Jun Wang, Shanli Wang, Qixin Guo, and Hiroshi Ogawa
  • Wear Resistance of Cr3C2-NiCr Detonation Spray Coating.; 2002年
    発表情報; Journal of Thermal Spray Technology 11, 261-265 (2002)
    著者; J. Wang, B. Sun, Q.X. Guo, M.Nishio, and H.Ogawa
  • Growth-dependent phonon characteristics in InN thin films; 2002年
    発表情報; PHYSICA B, 318, 2/3, 180-187
    著者; Qian, Z. G / Yu, G / Shen, W. Z / Ogawa, H / Guo, Q. X
  • Optical constants of InN thin films on (111)GaAs grown by reactive magnetron sputtering; 2002年
    発表情報; Journal of Applied Physics 91, 9803-9808 (2002).
    著者; H.F. Yang, Z.G. Qian, W.Z. Shen, Q.J. Pang, H. Ogawa, and Q.X. Guo
  • Molecular-beam Epitaxy growth of GaAs and InGaAs/GaAs nanodot arrays using anodic Al2O3 nanohole array template masks; 2002年
    発表情報; Applied Physics Letters 81, 361-363 (2002)
    著者; X.Y. Mei, D. Kim, H.E. Ruda, and Q.X. Guo
  • Effects of Dry Processing on Optical Properties of Zinc Telluride; 2002年
    発表情報; JAPANESE JOURNAL OF APPLIED PHYSICS PART 1 REGULAR PAPERS SHORT NOTES AND REVIEW PAPERS, 41, 8, 5069-5072
    著者; Guo, Q. X / Matsumoto, Y / Wang, S / Tanaka, T / Nishio, M / Ogawa, H
  • Infrared reflection characteristics in InN thin films for the application of plasma filters; 2002年
    発表情報; Journal of Applied Physics, 92, 3683-3687 (2002)
    著者; Z.G. Qian, W.Z. Shen, H. Ogawa, and Q.X. Guo
  • Cathodoluminescence Study of Highly Ordered Arrays of InGaAs Quantum Dots; 2002年
    発表情報; JAPANESE JOURNAL OF APPLIED PHYSICS PART 1 REGULAR PAPERS SHORT NOTES AND REVIEW PAPERS, 41, 12, 7297-7300
    著者; Guo, Q. X / Mei, X. / Ogawa, H / Ruda, H / Qian, Z. G
  • Growth rate characteristics and photoluminescence properties of ZnTe in MOVPE system; 2001年
    発表情報; APPLIED SURFACE SCIENCE, 169/170, 227-230
    著者; Nishio, M / Hayashida, K / Guo, Q. X / Ogawa, H
  • Effect of VI/II ratio upon photoluminescence properties of aluminum-doped ZnTe layers grown by MOVPE; 2001年
    発表情報; APPLIED SURFACE SCIENCE, 169/170, 223-226
    著者; Nishio, M / Hayashida, K / Guo, Q. X / Ogawa, H
  • Growth of InN films on (1 1 1)GaAs substrates by reactive magnetron sputtering; 2001年
    発表情報; APPLIED SURFACE SCIENCE, 169/170, 340-344
    著者; Guo, Q. X / Murata, K / Nishio, M / Ogawa, H
  • Effect of the substrate pretreatment on the epitaxial growth of indium nitride; 2001年
    発表情報; APPLIED SURFACE SCIENCE, 169/170, 345-348
    著者; Guo, Q. X / Okada, A / Nishio, M / Ogawa, H
  • Photoluminescence properties of ZnTe homoepitaxial films deposited by synchrotron-radiation-excited growth; 2001年
    発表情報; NUCLEAR INSTRUMENTS AND METHODS IN PHYSICS RESEARCH SECTION A, 467/468, 2, 1225-1228
    著者; Nishio, M / Hayashida, K / Harada, H / Mitsuishi, Y / Guo, Q. X / Ogawa, H
  • A356 alloy refined by melt thermal treatment; 2001年
    発表情報; INTERNATIONAL JOURNAL OF CAST METALS RESEARCH, 14, 3, 165-168
    著者; Wang, J / He, S / Sun, B / Zhou, Y / Guo, Q. X / Nishio, M
  • Characteristics of Reactive Ion Etching for Zinc Telluride Using CH4 and H2 Gases; 2001年
    発表情報; Journal of Vacuum Science and Technology A 19, 2232-2234 (2001)
    著者; Qixin Guo, Motoatsu Matsuse, Tooro Tanaka, Mitsuhiro Nishio, Hiroshi Ogawa, Y. Chang, J. Wang, S.L. Wang
  • Temperature effect on electronic structure of AlN; 2001年
    発表情報; Physical Review B 64, 113105-1--3 (2001)
    著者; Qixin Guo, Mitsuhiro Nishio, Hiroshi Ogawa, Akira Yoshida
  • A study on novel non-thermal epitaxial technique of compound semiconductor using synchrotron radiation; 2001年
    発表情報; Journal of the Indian Institute of Science 81, 549-555 (2001).
    著者; Mitsuhiro Nishio, Kazuki Hayashida, Tooru Tanaka, Qixin Guo, and Hiroshi Ogawa
  • Effects of wavelength upon photoluminescence properties of ZnTe layers grown by photo-assisted MOVPE; 2000年
    発表情報; JOURNAL OF CRYSTAL GROWTH, 214/215, 216-219
    著者; Hayashida, K / Nishio, M / Harada, H / Furukawa, S / Guo, Q. X / Ogawa, H
  • Reactive ion etching of indium nitride using CH4 and H2 gases; 2000年
    発表情報; Japanese Journal of Applied Physics, 39, 5048-5051 (2000)
    著者; Q.X.Guo, M. Matsuse, M.Nishio, and H.Ogawa
  • Effects of substrate temperature upon photoluminescence properties of ZnTe layers grown by photo-assisted MOVPE; 2000年
    発表情報; JOURNAL OF CRYSTAL GROWTH, 221, 1/4, 404-409
    著者; Hayashida, K / Nishio, M / Harada, H / Furukawa, S / Guo, Q. X / Ogawa, H
  • Growth of AlInN on (111)GaAs Substrates; 2000年
    発表情報; JAPANESE JOURNAL OF APPLIED PHYSICS PART 2 LETTERS, 39, 11B, L1143-L1145
    著者; Guo, Q. X / Okada, A / Kidera, H / Nishio, M / Ogawa, H
  • Ohmic contacts to p-type ZnTe using electroless Pd; 1999年
    発表情報; THIN SOLID FILMS, 343/344, 2, 508-511
    著者; Nishio, M / Guo, Q. X / Ogawa, H
  • Homoepitaxial growth of ZnTe by synchrotron radiation using metalorganic sources; 1999年
    発表情報; Thin Solid Films, 343/344, 504-507 (1999).
    著者; M.Nishio, Y.Mitsuishi, Q.X.Guo, and H.Ogawa
  • Effect of dopant flow rate upon photoluminescence properties in aluminum-doped ZnTe layers grown by MOVPE; 1999年
    発表情報; THIN SOLID FILMS, 343/344, 2, 512-515
    著者; Nishio, M / Guo, Q. X / Ogawa, H
  • Growth characteristics of homoepitaxial ZnTe films deposited by synchrotron radiation using metalorganic sources; 1999年
    発表情報; Japanese Journal of Applied Physics, Suppl.38-1, 568-571 (1999).
    著者; M.Nishio, T.Enoki, Q.X.Guo, and H.Ogawa
  • Effects of nitrogen/argon ratio on composition and structure of InN films prepared by r.f. magnetron sputtering; 1999年
    発表情報; THIN SOLID FILMS, 343/344, 2, 524-527
    著者; Guo, Q. X / Shingai, N / Mitsuishi, Y / Nishio, M / Ogawa, H
  • Low-Temperature Growth of InN Films on (111)GaAs Substrates; 1999年
    発表情報; Japanese Journal of Applied Physics, 38, L490-L491 (1999).
    著者; Q.X.Guo, M.Nishio, H.Ogawa, and A.Yoshida
  • Extended X-ray absorption fine structure (EXAFS) of InN and InGaN; 1999年
    発表情報; Physica status solidi (b), 216, 151-156 (1999).
    著者; K.P.O'Donnell, R.W.Martin, M.E.White, J.F.W.Mosselmans, and Q.X.Guo
  • Energy loss spectrum of AlN in the 6-120 eV region; 1998年
    発表情報; JOURNAL OF CRYSTAL GROWTH, 189/190, 1/4, 457-460
    著者; Guo, Q. X / Nishio, M / Ogawa, H / Yoshida, A
  • Deposition of InN thin films by radio frequency magnetron sputtering; 1998年
    発表情報; JOURNAL OF CRYSTAL GROWTH, 189/190, 1/4, 466-470
    著者; Guo, Q. X / Shingai, N / Nishio, M / Ogawa, H
  • Electronic structure of indium nitride studied by photoelectron spectroscopy; 1998年
    発表情報; PHYSICAL REVIEW -SERIES B-, 58, 23, 15304-15306
    著者; Guo, Q. X / Nishio, M / Ogawa, H / Wakahara, A / Yoshida, A
  • Optical properties of aluminum nitride; 1997年
    発表情報; PHYSICAL REVIEW -SERIES B-, 55, 24, R15987-R15988
    著者; Guo, Q. X / Nishio, M / Ogawa, H / Yoshida, A
  • Optical spectra of InN single crystal in VUV region; 1996年
    発表情報; Journal of Electron Spectroscopy and Related Phenomena, 79, 9-12 (1996).
    著者; Q.Guo, H.Ogawa, and A.Yoshida
  • Optical properties of zinc telluride in vacuum ultraviolet region; 1996年
    発表情報; Solid State Communications, 100, 813-815 (1996).
    著者; Q.X.Guo, M.Ikejiri, M.Nishio, and H.Ogawa
  • Growth of AlInN single crystal films by microwave excited metalorganic vapor phase epitaxy; 1995年
    発表情報; Journal of Crystal Growth, 146, 462-466 (1995).
    著者; Q.X.Guo, H.Ogawa, and A.Yoshida
  • Growth of InN films on GaAs(111) and GaP(111) substrates by microwave excited metalorganic vapor phase epitaxy; 1995年
    発表情報; Applied Physics Letters, 66, 715-717 (1995).
    著者; Q.X.Guo, H.Ogawa, H.Yamano, and A.Yoshida
  • Crystal structure and orientation of AlInN epitaxial layers grown on (0001) α-Al2O3 substrates; 1995年
    発表情報; Japanese Journal of Applied Physics, 34, 4653-4657 (1995).
    著者; Q.X.Guo, N.Itoh, H.Ogawa, and A.Yoshida
  • Low temperature liquid phase epitaxy of silicon from gallium solution; 1995年
    発表情報; Journal of Crystal Growth, 155, 193-197 (1995).
    著者; H.Ogawa, Q.Guo, and A.Yoshida
  • Microhardness of indium nitride single crystal films; 1994年
    発表情報; Japanese Journal of Applied Physics, 33, 90-91 (1994).
    著者; Q.X.Guo and A.Yoshida
  • Structural properties of InN film grown on sapphire substrate by microwave excited metalorganic vapor phase epitaxy; 1994年
    発表情報; Journal of Applied Physics, 75, 4927-4932 (1994).
    著者; Q.X.Guo, T.Yamamura, A.Yoshida, and N.Itoh
  • Temperature dependence of bandgap change in InN and AlN; 1994年
    発表情報; Japanese Journal of Applied Physics, 33, 2453-2456 (1994).
    著者; Q.X.Guo and A.Yoshida
  • Thermal stability of indium nitride single crystalline films; 1993年
    発表情報; Journal of Applied Physics, 73, 7969-7971 (1993).
    著者; Q.X.Guo, O.Kato, and A.Yoshida
  • Degragation mechanism of Au/AOx/Al tunnel junction; 1993年
    発表情報; Journal of the Physical Society of Japan, 62, 1286-1291 (1993).
    著者; Y.Hirao, M.Haraguchi, M.Fukui, Q.Guo, and A.Yoshida
  • Chemical etching of indium nitride; 1992年
    発表情報; Journal of the Electrochemical Society, 139, 2008-2009 (1992).
    著者; Q.X.Guo, O.Kato and A.Yoshida
  • Optical constants of indium nitride; 1992年
    発表情報; Solid State Communications, 83, 721-723 (1992).
    著者; Q.X.Guo, O.Kato, M.Fujisawa and A.Yoshida

資料・解説・論説・研究報告・総合雑誌の論文

  • Epitaxial growth of ZnTe layers on (111) GaAs substrates; 2012年04月
    発表情報; Annual Report of ILE Joint Research, Institute of Laser Engineering, Osaka University, pp.157-158 (2012).
    著者; Qixin Guo, K. Saito, Tooru Tanaka, Mitsuhiro Nishio, Masahiko Tani, and Masanori Hangyo
  • Crystal Growth and Doping of ZnTe-based Materials for Optoelectronic Applications; 2011年06月
    発表情報; JOURNAL OF CRYSTALLIZATION PHYSICS AND CHEMISTRY 2(1), (January-June 2011) pp. 17-37.
    著者; Tooru Tanaka, Katsuhiko Saito, Qixin Guo and Mitsuhiro Nishio
  • Low-temperature buffer layer effects on the quality of ZnTe epilayers; 2011年05月
    発表情報; Annual Report of ILE Joint Research, Institute of Laser Engineering, Osaka University, pp.221-222 (2011).
    著者; Qixin Guo, K. Saito, Tooru Tanaka, Mitsuhiro Nishio, Masahiko Tani, and Masanori Hangyo
  • Improvement of Crystal Quality of ZnTe Epilayers on Sapphire Substrates; 2010年04月
    発表情報; Annual Report of ILE Joint Research, Osaka University, pp155-156, 2010.
    著者; Q.X. Guo, Y. Kadoguchi, Y. Ding, T. Tanaka, M. Nishio, M. Tani, and M. Hangyo
  • Growth and Characterization of ZnTe Epilayers on Sapphire Substrate; 2009年04月
    発表情報; ILE Annual Report of Collaborative Research, Osaka University, pp. 161-162, (2009).
    著者; Q.X. Guo, Y. Nakao, Y. Ding, T. Tanaka, M. Nishio, M. Tani, and M. Hangyo
  • 新材料による高効率純緑色発光ダイオード; 2009年01月
    発表情報; 機能材料, 29, 2, 43-51
    著者; 田中徹、西尾光弘、郭其新、小川博司
  • Growth of High-Quality ZnTe Epilayers for Terahertz Devices Applications; 2008年04月
    発表情報; Annual Report of ILE Joint Research, Institute of Laser Engineering, Osaka University, pp.217-218 (2008).
    著者; Qixin Guo, Yusuke Kume, Tooru Tanaka, Mitsuhiro Nishio, Hiroshi Ogawa, Masahiko Tani, and Masanori Hangyo
  • Current Statues of researches on Electronic Science and Technology; 2007年12月
    発表情報; Journal of Shanghai Dianji University, Vol. 10, 245-248 (2007) (in Chinese)
    著者; 郭其新
  • SAGA Light Sourceの現状及びシンクロトロン光を用いたプロセス技術; 2007年04月
    発表情報; 電気学会研究会資料 光・量子デバイス研究会ODQ-07-30~35 pp.7-10
    著者; 郭其新、田中徹、西尾光弘、小川博司
  • シンクロトロン光励起プロセスの半導体応用と展望,; 2007年
    発表情報; 電気学会論文誌C, Vol. 127-C, (2007) p.126.
    著者; 田中 徹,郭 其新,西尾光弘,小川博司,本岡輝昭,
  • Keys to success of engineering education in global society,; 2003年
    発表情報; Proceeding of Intemational Fommon Higher Vbcational-technical Education and Globalization, 13, 1-11
    著者; Qi xin Guo

一般講演(学術講演を含む)

  • Crystal growth of gallium oxide based wide bandgap semiconductors; 2016年10月
    発表情報; International conference on applied crystallography, October 17-19, 2016, Houston, USA, Oct. 18 16:45-17:10.
    著者; Qixin Guo, Katsuhiko Saito, Tooru Tanaka, Mitsuhiro Nishio
  • Optical and electrical properties of Si-doped Ga2O3 films; 2016年10月
    発表情報; International Conference on Optoelectronics and Microelectronics Technology and Application OMTA 2016, Shanghai, 10-12 Oct. Conf, 5,6, Session 4, 10:40-10:50, 12 Oct. 2016
    著者; Fabi Zhang, Qixin Guo
  • Epitaxial growth of Ga2O3:Er films on silicon substrate; 2016年08月
    発表情報; The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18), August 7-12, 2016, Nagoya, MoP-G04.
    著者; Z. Chen, K. Saito, T. Tanaka, M. Nishio, M. Arita, Q. Guo*
  • Low temperature growth of ZnO/MgZnO single quantum well; 2016年08月
    発表情報; The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18), August 7-12, 2016, Nagoya,ThP-T04.
    著者; X. Wang, K. Saito, T. Tanaka, M. Nishio, Q.-X. Guo*
  • Growth of ZnMgSeTe nearly Lattice-matched to ZnTe and p-type Doping by Low-pressure MOVPE; 2016年08月
    発表情報; The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18), August 7-12, 2016, Nagoya,ThP-T04-10.
    著者; K. Saito, M. Nishio, Y. Nakatsuru, T. Shono, Y.Matsuo, A. Tomota, T. Tanaka, and Q. X. Guo
  • Photoluminescence and Electrical Properties of P-doped ZnTe Layers Grown by Low Pressure MOVPE; 2016年08月
    発表情報; The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18), August 7-12, 2016, Nagoya, ThP-T04-11.
    著者; M. Nishio, K. Saito, Y. Nakatsuru, T. Shono, Y.Matsuo, A. Tomota, T. Tanaka, and Q. X. Guo
  • Thickness influence on properties of Ga2O3 films grown by pulsed laser deposition; 2016年07月
    発表情報; The International Workshop on UV Materials and Devices (IWUMD-2016), Peking University, July 27-71, 2016, P-8, 16:00-18:00, July 28.
    著者; Fabi Zhang, Qixin Guo
  • Green Electroluminescence from Er Doped Gallium Oxide/Silicon Heterostructured Light Emitting Device; 2016年06月
    発表情報; 58th Electronic Materials Conference, June 22-24, 2016, University of Delaware, Newark, DE, June 22, PS7.
    著者; Qixin Guo, Zhenwei Chen, Shinji Noda, Katsuhiko Saito, Tooru Tanaka, and Mitsuhiro Nishio
  • Si-Doped Ga2O3 Films Grown by Pulsed Laser Deposition; 2015年11月
    発表情報; International Workshop on Gallium Oxide and Related Materials 2015, E29, November 3-6, 2015, Kyoto.
    著者; F. Zhang, K. Saito, T. Tanaka, M. Nishio, and Q. Guo*
  • The Effect of Growth Temperature on Structural and Optical Properties of Europium Doped Ga2O3 Films; 2015年11月
    発表情報; International Workshop on Gallium Oxide and Related Materials 2015, E30, November 3-6, 2015, Kyoto.
    著者; Z. Chen, K. Saito, T. Tanaka, M. Nishio, and Q. Guo*
  • Effect of Substrate Temperature on Structures and Optical Properties of (AlGa)2O3 Films; 2015年11月
    発表情報; International Workshop on Gallium Oxide and Related Materials 2015, E33, November 3-6, 2015, Kyoto.
    著者; X. Wang, K. Saito, T. Tanaka, M. Nishio, and Q. Guo*
  • ZnTe基板上へのClドープCdTe薄膜のMBE成長; 2015年03月
    発表情報; 2015年第62回応用物理学会春季学術講演会, 東海大学, 平成27年3月12日, 12p-A26-1
    著者; 寺沢俊貴, 田中徹, 斉藤勝彦, 郭其新, 西尾光弘
  • MBEによる高不整合材料ZnCdTeO薄膜の成長; 2015年03月
    発表情報; 2015年第62回応用物理学会春季学術講演会, 東海大学, 平成27年3月12日, 12p-A26-2.
    著者; 岡野 友紀, 溝口 耕輔, 寺沢 俊貴, 田中 徹, 斉藤 勝彦, 郭 其新, 西尾 光弘 岡野 友紀, 溝口 耕輔, 寺沢 俊貴, 田中 徹, 斉藤 勝彦, 郭 其新, 西尾 光弘
  • PLD法によるSnドープGa2O3薄膜の成長と評価; 2014年12月
    発表情報; 平成26年度応用物理学会九州支部学術講演会, 大分大学, 平成26年12月6日, 6Ap-3
    著者; 姜英希, 張法碧, 斉藤勝彦, 田中徹, 西尾光弘, 郭其新
  • 多源蒸着法によるCu2SnSe3の作製と評価; 2014年12月
    発表情報; 平成26年度応用物理学会九州支部学術講演会, 大分大学, 平成26年12月6日, 6Ba-7
    著者; 徳永智史, 田中徹, 斉藤勝彦, 郭其新, 西尾光弘
  • Cu2ZnSn(S,Se)4薄膜太陽電池応用を目指したZnO:Alおよびi-ZnO薄膜の作製と評価; 2014年12月
    発表情報; 平成26年度応用物理学会九州支部学術講演会, 大分大学, 平成26年12月6日, 6Ea-1
    著者; 坂本駿,徳永智史, 田中徹, 斎藤勝彦, 郭其新, 西尾光弘
  • ZnTe(111)薄膜上へのアンドープZnO薄膜成長及び特性評価; 2014年12月
    発表情報; 平成26年度応用物理学会九州支部学術講演会, 大分大学, 平成26年12月6日, 6Ea-2
    著者; 中島洋平, 中嶋和紀, 斉藤勝彦, 田中徹, 西尾光弘, 郭其新
  • 減圧有機金属気相成長法により作製されたZnTeエピ膜の成長特性; 2014年12月
    発表情報; 平成26年度応用物理学会九州支部学術講演会, 大分大学, 平成26年12月6日, 6Ea-3
    著者; 阿比留昌克, 森英一郎, 斉藤勝彦, 田中徹, 郭其新, 西尾光弘
  • 分子線エピタキシ一法によるZnTe基阪上へのClドープCdTe層の成長; 2014年12月
    発表情報; 平成26年度応用物理学会九州支部学術講演会, 大分大学, 平成26年12月6日, 6Ea-4
    著者; 寺沢俊貴, 田中徹, 斉藤勝彦, 郭其新, 西尾光弘
  • 有機金属気相成長法で作製されたZnTeエピ膜の光学的結品学的特性に及ぼす圧力の影響; 2014年12月
    発表情報; 平成26年度応用物理学会九州支部学術講演会, 大分大学, 平成26年12月6日, 6Ea-5
    著者; 森英一郎, 阿比留昌克, 浦田健佑, 荒木康博, 田中大地, 斉藤勝彦, 田中徹, 郭其新, 西尾光弘
  • 有機金属気相成長法によるAl2O3基板上へのZn1-xMgxSeyTe1-y膜の成長とバンドギャップの評価; 2014年12月
    発表情報; 平成26年度応用物理学会九州支部学術講演会, 大分大学, 平成26年12月6日, 6Ea-6
    著者; 田中大地, 浦田健佑, 阿比留昌克, 荒木康博, 森英一朗, 斎藤勝彦, 西尾光弘, 田中徹, 郭其新
  • スパッタリング法によるMgO(100)基板上へのInN薄膜成長; 2014年12月
    発表情報; 平成26年度応用物理学会九州支部学術講演会, 大分大学, 平成26年12月6日, 6Ea-10
    著者; 藤坂遼, 牛島孝哉, 斉藤勝彦, 田中徹, 西尾光弘, 郭其新
  • 有機金属気相成長法によるZnTe基板上へのZn1-xMgxSeyTe1-xの成長とPドーピング; 2014年12月
    発表情報; 平成26年度応用物理学会九州支部学術講演会, 大分大学, 平成26年12月6日, 6Ep-1
    著者; 荒木康博, 浦田健佑, 阿比留昌克, 田中大地, 森英一郎, 斉藤勝彦, 田中徹, 郭其新, 西尾光弘
  • ZnTeO-based intermediate band solar cells using MBE-grown n-type ZnS layers; 2014年11月
    発表情報; 6th World Conferenceon Photovoltaic Energy Conversion (WCPEC-6), November 25, 2014, 1TuO.7.3.
    著者; Tooru Tanaka, Shin Haraguchi, Kosuke Mizoguchi, Toshiki Terasawa, Katsuhiko Saito, Qixin Guo, Mitsuhiro Nishio, Kin M. Yu and Wladek Walukiewicz
  • Optical properties of ZnTe/ZnMgTe multiple quantum wells for optoelectronic device applications; 2014年11月
    発表情報; 27th International Microprocesses and Nanotechnology Conference, November 6, 2014, Fukuoka, Japan. 6B-5-4.
    著者; T. Tanaka, H. Ohshita, K. Saito, Q. Guo, and M. Nishio
  • Intermediate band solar cells based on ZnTeO epilayer with n-ZnS blocking layer; 2014年09月
    発表情報; 18th International Conference on Molecular Beam Epitaxy, September 11, 2014, Flagstaff, AZ. P110.
    著者; Tooru Tanaka, Shin Haraguchi, Kosuke Mizoguchi, Katsuhiko Saito, Qixin Guo, Mitsuhiro Nishio, Kin M. Yu, and Wladek Walukiewicz
  • n-ZnS窓層を用いたZnTeO中間バンド型太陽電池の特性評価; 2014年09月
    発表情報; 2014年第75回応用物理学会秋季学術講演会, 北海道大学, 平成26年9月17日, 17p-A12-8.
    著者; 田中徹,原口真, 溝口耕輔, 寺沢俊貴, 斉藤勝彦, 郭其新, 西尾光弘
  • ZnTe基板上へのZnCdTeO薄膜のMBE成長と評価; 2014年09月
    発表情報; 平成26年度(第67回)電気・情報関係学会九州支部連合大会, 鹿児島大学, 平成26年9月18日, 07-1A-02.
    著者; 溝口耕輔, 寺沢俊貴, 田中徹, 斉藤勝彦, 郭其新, 西尾光弘
  • MOVPE法によるm-planeサファイア基板上へのZnTeヘテロエピタキシャル成長の基板温度依存性; 2014年09月
    発表情報; 平成26年度(第67回)電気・情報関係学会九州支部連合大会, 鹿児島大学, 平成26年9月18日, 07-1A-03.
    著者; 中嶋和紀, 中島洋平, 齋藤勝彦, 田中徹, 西尾光弘, 郭其新
  • スパッタリング法によるYSZ基板上のInGaN薄膜成長; 2014年09月
    発表情報; 平成26年度(第67回)電気・情報関係学会九州支部連合大会, 鹿児島大学, 平成26年9月18日, 07-1A-04.
    著者; 牛島孝哉, 藤坂遼, 斉藤勝彦, 田中徹, 西尾光弘, 郭其新
  • 有機金属気相成長法によるZn1-xMgxSeyTe1-y薄膜の成長とMg組成の制御; 2014年09月
    発表情報; 平成26年度(第67回)電気・情報関係学会九州支部連合大会, 鹿児島大学, 平成26年9月18日, 07-1A-05.
    著者; 浦田健佑, 田中大地, 荒木康博, 阿比留昌克, 森 英一郎, 齋藤勝彦, 田中徹, 郭其新, 西尾光弘
  • ITO透明電極を用いたZnTe緑色LEDの作製と評価; 2014年09月
    発表情報; 平成26年度(第67回)電気・情報関係学会九州支部連合大会, 鹿児島大学, 平成26年9月18日, 07-1A-06.
    著者; 岡本康弘, 西尾光弘, 田中徹, 齊藤勝彦, 浦田健祐, 阿比留昌克, 田中大地, 荒木康博, 森 英一郎
  • n型ZnS窓層を用いたZnTe太陽電池の作製とアニール効果; 2014年09月
    発表情報; 平成26年度(第67回)電気・情報関係学会九州支部連合大会, 鹿児島大学, 平成26年9月18日, 07-1A-09.
    著者; 原口真, 寺沢俊貴, 田中徹, 斉藤勝彦, 郭其新, 西尾光弘
  • Structural and optical properties of (GaIn)2O3 films; 2014年08月
    発表情報; IUMRS-ICA2014(International Union of Materials Research Societies- The 15th IUMRS International Conference in Asia), Fukuoka University, Fukuoka City, Japan,C8-028-002,9:20-9:35,August 28,2014 Qixin Guo*
    著者; Fabi zhang, Katsuhiko Saito; Tooru, Tanaka; Mitsuhiro Nishio and Qixin Guo*
  • INTERMEDIATE BAND SOLAR CELLS BASED ON HIGHLY MISMATCHED ZNTEO ALLOYS; 2014年07月
    発表情報; Grand Renewable Energy 2014 (GRE2014) International Conference, July 31, 2014, Tokyo. O-Pv-12-2.
    著者; Tooru Tanaka, Shin Haraguchi, Kosuke Mizoguchi, Katsuhiko Saito, Qixin Guo, Mitsuhiro Nishio, Kin Man Yu, and Wladek Walukiewicz
  • Effects of substrate temperature and doping upon some properties of undoped and phosphorus-doped Zn1-xMgxSeyTe1-y layer grown by metalorganic vapor phase epitaxy; 2014年07月
    発表情報; 17th International Conference on Metalorganic Vapor Phase Epitaxy, 14 July, 2014, Lausanne, Switzerland. Mon-Poster-0-85.
    著者; Mitsuhiro Nishio, Katsuhiko Saito, Kensuke Urata, Yasuhiro Okamoto, Yasuaki Nakamura, Tooru Tanaka and Qixin Guo
  • Effects of DETe transport rate upon some properties of phosphorus-doped Zn1-xMgxTe layers grown by metalorganic vapor phase epitaxy; 2014年07月
    発表情報; 17th International Conference on Metalorganic Vapor Phase Epitaxy, 14 July, 2014, Lausanne, Switzerland. Thu-Poster-0-84.
    著者; Katsuhiko Saito, Mitsuhiro Nishio, Kensuke Urata, Yasuhiro Okamoto, Yasuaki Nakamura, Tooru Tanaka and Qixin Guo
  • ZnTe基板上へのAlドープZnSe薄膜のMBE成長と太陽電池への応用; 2014年03月
    発表情報; 第60回応用物理学会春季学術講演会, 青山学院大学, 2014年3月18日, 18a-D2-4.
    著者; 溝口耕輔, 長尾康弘, 田中徹, 斉藤勝彦, 郭其新, 西尾光弘
  • Molecular Beam Epitaxial Growth of N-Type ZnS Layers for ZnTeO-Based Intermediate Band Solar Cells; 2013年12月
    発表情報; 2013 Materials Research Society Fall Meeting, December 1-6, 2013, Boston, MA, W5.14
    著者; Tooru Tanaka, Shin Haraguchi, Masaki Miyabara, Katsuhiko Saito, Qixin Guo, Mitsuhiro Nishio, Kin M. Yu, Wladek Walukiewicz
  • 分子線エピタキシー法によるZnTe基板上へのZnMgSeTe四元混晶の成長; 2013年11月
    発表情報; 平成25年度応用物理学会九州支部学術講演会, 長崎大学, 2013年11月30日, 30Ba-10.
    著者; 長尾康弘, 溝口耕輔, 田中徹, 斉藤勝彦, 郭其新, 西尾光弘
  • 有機金属気相成長法により成長されたZnMgSeTe膜の光学特性について; 2013年11月
    発表情報; 平成25年度応用物理学会九州支部学術講演会, 長崎大学, 2013年11月30日, 30Ba-11.
    著者; 岡本 康弘, 伊藤 綾祐, 田中 健人, 斉藤 勝彦, 田中 徹, 西尾 光弘, 郭 其新
  • 有機金属気相成長法により成長されたZnMgSeTe膜の成長特性; 2013年11月
    発表情報; 平成25年度応用物理学会九州支部学術講演会, 長崎大学, 2013年11月30日, 30Ba-12.
    著者; 浦田 健佑, 伊藤綾祐, 田中健人, 斉藤勝彦, 田中徹, 郭其新, 西尾光弘
  • MOVPE法によるAl2O3基板上へのZnTeヘテロエピタキシャル成長の基板面方位依存性; 2013年11月
    発表情報; 平成25年度応用物理学会九州支部学術講演会, 長崎大学, 2013年11月30日, 30Bp-1.
    著者; 中嶋 和紀, 出木場 透, 齋藤 勝彦, 田中 徹, 西尾 光弘, 郭 其新
  • 異なるTDMAP供給量でドープされたZnTeエピ膜のフォトルミネッセンス特性; 2013年11月
    発表情報; 平成25年度応用物理学会九州支部学術講演会, 長崎大学, 2013年11月30日, 30Bp-2.
    著者; 中村保晃, 浦田健佑, 伊藤綾祐, 田中健人, 斉藤勝彦, 田中徹, 郭其新, 西尾光弘
  • ZnTe基板上へのAlドープZnSe薄膜のMBE成長と評価; 2013年11月
    発表情報; 平成25年度応用物理学会九州支部学術講演会, 長崎大学, 2013年11月30日, 30Bp-3.
    著者; 溝口 耕輔, 長尾 康弘, 田中 徹, 斉藤 勝彦, 郭其新, 西尾 光弘
  • スパッタリング法によるSi基板上へのGaN薄膜成長; 2013年11月
    発表情報; 平成25年度応用物理学会九州支部学術講演会, 長崎大学, 2013年11月30日, 30Bp-5.
    著者; 牛島 孝哉, 中尾 友也, 斉藤 勝彦, 田中 徹, 西尾 光弘, 郭 其新
  • n型ZnS窓層を用いたZnTe太陽電池の作製と評価; 2013年11月
    発表情報; 平成25年度応用物理学会九州支部学術講演会, 長崎大学, 2013年11月30日, 30Ep-1.
    著者; 原口 真, 宮原 雅宜, 田中 徹, 斉藤 勝彦, 郭 其新, 西尾 光弘
  • Effect of KCN-Etching on Photovoltaic Properties of Cu2ZnSnSe4 Thin Film Solar Cell; 2013年10月
    発表情報; 23rd Photovoltaic Science and Engineering Conference, October 28-November 1, 2013, Taipei, Taiwan, 3-P-57.
    著者; Satoshi TOKUNAGA, Tooru TANAKA, Katsuhiko SAITO, Qixin GUO, Mitsuhiro NISHIO, Xiuxun HAN
  • Growth of n-type ZnS blocking epilayers for ZnTeO-based intermediate band solar cells; 2013年10月
    発表情報; 23rd Photovoltaic Science and Engineering Conference, October 28-November 1, 2013, Taipei, Taiwan, 4-P-4.
    著者; Tooru Tanaka, Shin Haraguchi, Masaki Miyabara, Katsuhiko Saito, Qixin Guo, Mitsuhiro Nishio, Kin M. Yu, and Wladek Walukiewicz
  • Growth and Characterization of Zn-MgSeTe Epilayers on ZnTe Substrates by Molecular Beam Epitaxy; 2013年09月
    発表情報; The 16th International Conference on II-VI Compounds and Related Materials, Nagahama Royal Hotel, Nagahama, Japan, September 9 - 13, 2013. Tu-P13.
    著者; Kosuke Mizoguchi, Yasuhiro Nagao, Tooru Tanaka, Katsuhiko Saito, Qixin Guo, and Mitsuhiro Nishio
  • Fabrication of ZnO/ZnTe Heterojunction by Using a Room Temperature Direct Bonding Technology; 2013年09月
    発表情報; The 16th International Conference on II-VI Compounds and Related Materials, Nagahama Royal Hotel, Nagahama, Japan, September 9 - 13, 2013. We-P10.
    著者; Hajime Akiyama, Katsuhiko Saito, Tooru Tanaka, Mitsuhiro Nishio, and Qixin Guo
  • Growth and Characterization of Zn1-xMgxSeyTe1-y on ZnTe Substrate by Metalorganic Vapor Phase Epitaxy; 2013年09月
    発表情報; The 16th International Conference on II-VI Compounds and Related Materials, Nagahama Royal Hotel, Nagahama, Japan, September 9 - 13, 2013. We-P13.
    著者; Mitsuhiro Nishio, Katsuhiko Saito, Ryosuke Ito, Kento Tanaka, Kensuke Urata, Yasuaki Nakamura, Tooru Tanaka, and Qixin Guo
  • Molecular Beam Epitaxy of n-ZnS Epilayers for ZnTe Solar Cell Application; 2013年09月
    発表情報; The 16th International Conference on II-VI Compounds and Related Materials, Nagahama Royal Hotel, Nagahama, Japan, September 9 - 13, 2013. We-P15.
    著者; Shin Haraguchi, Masaki Miyabara, Tooru Tanaka, Katsuhiko Saito, Qixin Guo, Mitsuhiro Nishio, Kin Man Yu, and Wladek Walukiewicz
  • Correlation Between Photoluminescence and Carrier Concentration in Phosphorus- doped ZnTe; 2013年09月
    発表情報; The 16th International Conference on II-VI Compounds and Related Materials, Nagahama Royal Hotel, Nagahama, Japan, September 9 - 13, 2013. We-P27.
    著者; Katsuhiko Saito, Ryosuke Ito, Kento Tanaka, Kensuke Urata, Yasuaki Nakamura, Tooru Tanaka, Qixin Guo, and Mitsuhiro Nishio
  • n-ZnS/p-ZnTe太陽電池におけるi-ZnS層挿入効果; 2013年09月
    発表情報; 第74回応用物理学会秋季学術講演会, 同志社大学, 2013年9月18日, 18p-P12-11.
    著者; 原口真, 宮原雅宜, 田中徹, 斉藤勝彦, 郭其新, 西尾光弘
  • PLD法によるα-Al2O3(001)基板上へのGa2O3薄膜作製及び評価; 2013年09月
    発表情報; 平成25年度(第66回)電気関係学会九州支部連合大会, 熊本大学, 2013年9月24日, 08-1P-07.
    著者; 若松剛次, 西尾光弘, 郭其新, 田中徹, 斉藤勝彦
  • 有機金属気相成長法によるZnMgSeTe薄膜の成長とSe組成の制御; 2013年09月
    発表情報; 平成25年度(第66回)電気関係学会九州支部連合大会, 熊本大学, 2013年9月24日, 11-1P-01.
    著者; 伊藤綾祐, 田中健人, 浦田健佑, 中村保晃, 齋藤勝彦, 田中徹, 郭其新, 西尾光弘
  • Al電極透明化によるZnTe LEDの自己吸収効果の抑制; 2013年09月
    発表情報; 平成25年度(第66回)電気関係学会九州支部連合大会, 熊本大学, 2013年9月24日, 11-1P-02.
    著者; 丸山祐一, 岡本康弘, 斉藤勝彦, 田中徹, 郭其新, 西尾光弘
  • 有機金属気相成長法により作製されたZn1-xMgxSeyTe1-y層の組成と基板温度の関係; 2013年09月
    発表情報; 平成25年度(第66回)電気関係学会九州支部連合大会, 熊本大学, 2013年9月24日, 11-1P-03.
    著者; 田中健人, 伊藤綾祐, 浦田健佑, 中村保晃, 齋藤勝彦, 田中徹, 郭其新, 西尾光弘
  • MOVPE法による(111)GaAs基板上へのZnTe薄膜成長に関する研究; 2013年09月
    発表情報; 平成25年度(第66回)電気関係学会九州支部連合大会, 熊本大学, 2013年9月24日, 11-1P-04.
    著者; 出木場透, 中嶋和紀, 斉藤勝彦, 田中徹, 西尾光弘, 郭其新
  • RFマグネトロンスパッタリング法によるSi基板上のInGaN薄膜成長に関する研究; 2013年09月
    発表情報; 平成25年度(第66回)電気関係学会九州支部連合大会, 熊本大学, 2013年9月24日, 11-1P-05.
    著者; 中尾友也, 牛島孝哉, 斉藤勝彦, 田中徹, 西尾光弘, 郭其新
  • Growth of (GaIn)2O3 film on sapphire substrate by PLD; 2013年09月
    発表情報; 平成25年度(第66回)電気関係学会九州支部連合大会, 熊本大学, 2013年9月24日, 11-1P-07.
    著者; Fabi Zhang, Qixin Guo, Katsuhiko Saito, Tooru Tanaka, Mitsuhiro Nishio
  • Growth of GaInN films on silicon substrates by reactive sputtering; 2013年07月
    発表情報; The 12th International Symposium on Sputtering and Plasma Processes, Kyoto Research Park, July 10-12, 2013, TF P1-1.
    著者; Q. Guo*, T. Nakao, T. Ushijima, K. Saito, T. Tanaka, M. Nishio
  • Photogenerated current by two-step photon excitation in ZnTeO Intermediate Band Solar Cells; 2013年06月
    発表情報; 38th IEEE Photovoltaic Specialists Conference, June 16-21, 2013, Tampa, Florida, 447.
    著者; T. Tanaka, M. Miyabara, Y. Nagao, K. Saito, Q. Guo, M. Nishio, K. M. Yu, W. Walukiewicz
  • Characterization of ZnTe layers on (0001) ZnO substrates by metalorganic vapor phase epitaxy; 2013年05月
    発表情報; The 40th International Symposium on Compound Semiconductors, May 19-23, 2013, Kober Convention Center, Kobe, Japan, MoPC-01-09.
    著者; Hajime Akiyama, Tooru Idekoba, Katsuhiko Saito, Tooru Tanaka, Mitsuhiro Nishio, and Qixin Guo*
  • Growth of Gallium Oxide Films by Pulsed Laser Deposition; 2013年05月
    発表情報; The 40th International Symposium on Compound Semiconductors, May 19-23, 2013, Kober Convention Center, Kobe, Japan, MoPC-07-08.
    著者; Qixin Guo, Fabi Zhang, Kouji Wakamatsu, Katsuhiko Saito, Tooru Tanaka, and Mitsuhiro Nishio
  • ZnTeO系高不整合材料による中間バンド型太陽電池の作製; 2013年05月
    発表情報; 第10回次世代の太陽光発電システムシンポジウム, 平成25年5月23日-24日, 金沢.
    著者; 田中徹, 長尾康弘, 宮原雅宜, 斉藤勝彦, 郭其新, 西尾光弘, K. M. Yu, W. Walukiewicz
  • n型ZnSを用いたZnTe太陽電池の作製; 2013年03月
    発表情報; 第60回応用物理学会春季学術講演会, 神奈川工科大学, 2013年3月28日, 28a-G4-4.
    著者; 宮原雅宜,原口真,田中徹,斉藤勝彦,郭其新,西尾光弘
  • ZnTe基板上へのZnMgSeTe四元混晶のMBE成長; 2013年03月
    発表情報; 第60回応用物理学会春季学術講演会, 神奈川工科大学, 2013年3月27日, 27p-G19-4.
    著者; 長尾康弘,溝口耕輔,田中徹,斉藤勝彦,郭其新,西尾光弘
  • シンクロトロン光による化合物半導体の評価; 2012年11月
    発表情報; 佐賀大学グリーンエレクトロニクス講演会、2012年11月7日、理工学部8号館809室、18:00-19:00
    著者; 郭其新
  • Photo-electrochemical properties of titanium dioxide thin films prepared by reactive RF sputtering method; 2012年08月
    発表情報; The 8th International Forum on Advanced Materials Science and Technology, Fukuoka, Japan, Augest 1-4, 2012, 3A-OS01-10.
    著者; M. Arita, Y. Tabata, H. Sakamoto, and Q.X. Guo
  • Growth of ZnTe layers on (0001) ZnO substrates by metalorganic vapor phase epitaxy; 2012年08月
    発表情報; The 8th International Forum on Advanced Materials Science and Technology, Fukuoka, Japan, Augest 1-4, 2012, 3A-OS01-06.
    著者; H. Akiyama, H. Hirano, T. Konomi, K. Saito, T. Tanaka, M. Nishio, and Q.X. Guo
  • Nanocrystallization of Si by High-pressure Torsion; 2012年08月
    発表情報; The 8th International Forum on Advanced Materials Science and Technology, Fukuoka, Japan, Augest 1-4, 2012, 2P-PS14.
    著者; K. Hayano, Y. Ikoma, K. Edalati, K. Saito, Q. Guo, Z. Horita
  • Synchrotron-Radiation-Excited UV-VIS Luminescence Experimental Station at Saga University beamline BL13: Design and Installation Progress; 2012年08月
    発表情報; The 8th International Forum on Advanced Materials Science and Technology, Fukuoka, Japan, Augest 1-4, 2012, 2P-PS20.
    著者; K. Saito, T. Tanaka, M. Nishio, Q. Guo
  • Development of ZnTe-based Solar Cells; 2012年08月
    発表情報; The 8th International Forum on Advanced Materials Science and Technology, Fukuoka, Japan, Augest 1-4, 2012, 2P-PS28.
    著者; M. Miyabara, T. Tanaka, K. Saito, Q. Guo, M. Nishio, K. M. Yu, W. Walukiewicz
  • Effects of Annealing Treatment upon Electrical and Photoluminescence Properties of Phosphorus-Doped ZnMgTe Epilayers Grown by Metaloroganic Vapor Phase Epitaxy; 2012年05月
    発表情報; The Sixteenth International Conference on Metal Organic Vapor Phase Epitaxy, May 20~25, 2012, Paradise Hotel Busan, Busan, Korea, ThB1-4.
    著者; Mitsuhiro Nishio, Keita Kai, Ryota Fujiki, Katsuhiko Saito, Tooru Tanaka, and Qixin Guo
  • Characterization of ZnTe Epilayers on GaAs (111) Substrates by Metalorganic Vapor Phase Epitaxy; 2012年05月
    発表情報; The Sixteenth International Conference on Metal Organic Vapor Phase Epitaxy, May 20~25, 2012, Paradise Hotel Busan, Busan, Korea, TuP-59.
    著者; Qixin Guo, Hajime Akiyama, Hiroyuki Hirano, Katsuhiko Saito, Tooru Tanaka, and Mitsuhiro Nishio
  • Influence of (MeCp)2Mg Transport Rate upon Growth of Phosphorus-Doped ZnMgTe Layers by MOVPE.; 2012年05月
    発表情報; The Sixteenth International Conference on Metal Organic Vapor Phase Epitaxy, May 20~25, 2012, Paradise Hotel Busan, Busan, Korea, TuP-62.
    著者; Katsuhiko Saito, Keita Sekioka, Tooru Tanaka, Qixin Guo, and Mitsuhiro Nishio
  • Surface Morphologies and Photoluminescence Properties of Undoped and P-doped ZnTe Layers Grown by Metaloroganic Vapor Phase Epitaxy.; 2012年05月
    発表情報; The Sixteenth International Conference on Metal Organic Vapor Phase Epitaxy, May 20~25, 2012, Paradise Hotel Busan, Busan, Korea, TuP-63.
    著者; Mitsuhiro Nishio, Yuji Hayashida, Katsuhiko Saito, Tooru Tanaka,and Qixin Guo
  • Epitaxial growth of ZnTe layers on (111) GaAs substrates; 2012年04月
    発表情報; 大阪大学レーザー研シンポジウム2012-平成23年度共同研究成果報告会- 2012年4月18日、No. 39, 大阪大学銀杏会館
    著者; Q.X. Guo, K. Saito, T. Tanaka, M. Nishio, M. Tani, and M. Hangyo
  • 仮想化技術を用いたIT技術者育成のためのサーバ実習環境の評価と教育実践; 2011年09月
    発表情報; 平成23年度工学教育研究講演会(第59回日本工学教育協会年次大会)、北海道大学、2011年9月9日、6-221
    著者; 曽超、石原好宏、郭其新
  • Fundamental properties of sputtered InGaN films; 2011年07月
    発表情報; The Eleventh International Symposium on Sputtering & Plasma Processes, Kyoto Research Park, July 6-8, 20011, Kyoto, Japan. TF P1-20.
    著者; Q. X. Guo, H. Senda, K. Saito, T. Tanaka, M. Nishio, J. Ding, T. Fan, and D. Zhang
  • Electronic Structure of II (Zn, Mg, Be)-VI (O, S) Wide-Gap Compound Semiconductor Alloys; 2011年07月
    発表情報; International Conference on Electrical Engineering 2011, 10 to 14 July 2011, Hong Kong, A162,11 July.
    著者; A. Yoshida, A. Wakahara, and Qixin Guo
  • Low-temperature buffer layer effects on the quality of ZnTe layers; 2011年05月
    発表情報; 大阪大学レーザー研シンポジウム2011-平成22年度共同研究成果報告会- 2011年5月11日、No. 25, 大阪大学コンベンションセンター
    著者; Q.X. Guo, K. Saito, T. Tanaka, M. Nishio, M. Tani, and M. Hangyo
  • Estimation of donor and acceptor levels in Al-doped ZnTe from photominescence measurement; 2010年09月
    発表情報; 7th International conference on Thin Film Physics and Applications, Sep. 24-27, Shanghia, China, P-6.
    著者; K. Saito, T. Saeki, X. Han, T. Tanaka, Q. Guo, and M. Nishio
  • Estimation of in-plane profiles in thickness and composition for ZnMgTe layers by optical methods; 2010年09月
    発表情報; 7th International conference on Thin Film Physics and Applications, Sep. 24-27, Shanghia, China, P-7.
    著者; K. Saito, K. Sekioka, T. Tanaka, Q. Guo, and M. Nishio
  • Effects of Total Flow Rate on ZnTe Growth on GaAs Substrate by Metalorganic Vapor Phase Epitaxy; 2010年08月
    発表情報; The 16th International Conference on Crystal Growth, 8-13 August, 2010, Beijing, PA158.
    著者; Qixin Guo, Masaki Nada, Yaliu Ding, Katsuhiko Saito, Tooru Tanaka, Mitsuhiro Nishio
  • Temperature Dependence of Electrical Properties from P-Doped ZnMgTe Bulk Crystals Grown by Bridgman Method; 2010年08月
    発表情報; The 16th International Conference on Crystal Growth, 8-13 August, 2010, Beijing, PB57.
    著者; Mitsuhiro Nishio, Kyosuke Hiwatashi, Keita Kai, Katsuhiko Saito, Tooru Tanaka, Qixin Guo
  • Effects of substrate temperature upon the properties of ZnMgTe layer grown by MOVPE; 2010年08月
    発表情報; The 18th International Vacuum Congress, August 23-27, 2010, Beijing, China, P3-Tf2-11
    著者; K. Saito, Y. inoue, Y. Hayashida, T. Tanaka, Q.X. Guo, M. Nishio
  • Effect of VI/II ratio upon photoluminescence and electrical properties of phosphorus-doped ZnTe films grown by MOVPE; 2010年08月
    発表情報; The 18th International Vacuum Congress, August 23-27, 2010, Beijing, China, P3-TF2-12
    著者; M. Nishio, K. Saito, T. Tanaka, Q. Guo
  • Low-temperature growth of InGaN films by reactive sputtering; 2010年06月
    発表情報; The 37th International Symposium on Compound Semiconductors, May 31-June 4, 2010, Takamatsu, Japan. FrP70.
    著者; Q.X. Guo, Y. Kusunoki, Y. Ding, K. Saito, T. Tanaka, and M. Nishio
  • Improvement of Crystal Quality of ZnTe Epilayers on Sapphire Substrates; 2010年04月
    発表情報; 大阪大学レーザー研シンポジウム2010-平成21年度共同研究成果報告会- 2010年4月27日ー28日、大阪大学コンベンションセンター
    著者;  Q.X. Guo, Y. Kadoguchi, Y. Ding, T. Tanaka, M. Nishio, M. Tani, and M. Hangyo
  • Buffer Layer Effects on Properties of ZnTe for Terahertz Device Application; 2009年09月
    発表情報; The 8th Pacific Rim Conference on Lasers and Electro-Optics, August 30 - September 3rd, 2009, Shanghai, China, TuP7-01
    著者; Qixin Guo, Yuki Nakao, Yoshiki Kadoguchi, Yaliu Ding, Tooru Tanaka, Mitsuhiro Nishio, Masahiko Tani, Masanori Hangyo
  • Photoelectron spectroscopic study on electronic structure of butterfly-templated ZnO; 2009年08月
    発表情報; The 14th International Conference on II-VI compounds, August 23-28, 2009, St.Petersburg, Russia, Tu6p-27.
    著者; Masao Kamada, Harue Sugiyama, Kazutoshi Takahashi, Qixin Guo, Jiajun Gu, Wang Zhang, Tongxiang Fan, and Di Zhang
  • Influence of low-temperature buffer layer on properties of ZnTe grown on GaAs substrates; 2009年08月
    発表情報; The 14th International Conference on II-VI compounds, August 23-28, 2009, St.Petersburg, Russia, Th5p-21.
    著者; Q.X. Guo, K. Saito, Y. Sueyasu, Y. Ding, T. Tanaka, and M. Nishio
  • Temperature dependence of photoluminescence from P-doped ZnMgTe bulk crystals of high quality grown by Bridgman method; 2009年08月
    発表情報; The 14th International Conference on II-VI compounds, August 23-28, 2009, St.Petersburg, Russia, Th5p-22
    著者; K. Saito, S. Shimao, T. Tanaka, Q.X. Guo, and M. Nishio
  • Growth of low-resistivity p-type ZnMgTe layers by MOVPE; 2009年08月
    発表情報; The 14th International Conference on II-VI compounds, August 23-28, 2009, St.Petersburg, Russia,Th5p-23
    著者; K. Saito, N. Nonaka, Y. Inoue, T. Tanaka, Q.X. Guo, and M. Nishio
  • Growth of InGaN films by reactive sputtering; 2009年07月
    発表情報; The 10th International Symposium on Sputtering and Plasma Processes, Kanazawa, July 8-10, 2009, TF P1-27.
    著者; Q. Guo, M. Ogata, Y. Ding, T. Tanaka, M. Nishio
  • Characterization of Cu2ZnSnS4 thin film fabricated by co-evaporation; 2009年07月
    発表情報; The 10th International Symposium on Sputtering and Plasma Processes, Kanazawa, July 8-10, 2009, TF P2-4.
    著者; A. Yoshida, T. Tanaka, M. Nishio, K. Saito, Q. Guo, T. Yamaguchi,
  • Effects of growth parameters on surface roughness of RF magnetron sputtered Al films; 2009年07月
    発表情報; The 10th International Symposium on Sputtering and Plasma Processes, Kanazawa, July 8-10, 2009, TF P3-11.
    著者; Q. Guo, Y. Matsushima, Y. Ding, T. Tanaka, M. Nishio,
  • Growth and Characterization of ZnTe Epilayers on Sapphire Substrate; 2009年04月
    発表情報; 大阪大学レーザー研シンポジウム2009-平成20年度共同研究成果報告会ー 平成21年4月23日ー24日、大阪大学
    著者; Q.X. Guo, Y. Nakao, Y. Ding, T. Tanaka, M. Nishio, M. Tani, and M. Hangyo
  • 多源蒸着法によるCu2ZnSnSe4薄膜の作製と評価; 2009年04月
    発表情報; 2009年春季第56回応用物理学関係連合講演会, 筑波大学, 平成21年4月2日, 2a-P18-24
    著者; 吉田晃周,斎木大輔,田中徹,郭其新,西尾光弘
  • Al熱拡散法によるZnTe緑色LEDの作製と評価; 2009年03月
    発表情報; 2009年春季第56回応用物理学関係連合講演会, 筑波大学, 平成21年3月30日, 30p-J-15
    著者; 田中徹,伊藤博昭,吉本拓史,郭其新,西尾光弘,小川博司
  • ブリッジマン法で作製した高品質PドープZnMgTe結晶のフォトルミネッセンス特性; 2008年11月
    発表情報; 平成20年度応用物理学会九州支部学術講演会, 宮崎大学, 平成20年11月30日, 30Ca-1
    著者; 島尾聡, 田中昌彦, 斉藤勝彦, 田中徹, 郭其新, 中畑秀利, 西尾光弘
  • MOVPE法によるサファイア基板上のZnTeエピタキシャル成長膜の構造特性; 2008年11月
    発表情報; 平成20年度応用物理学会九州支部学術講演会, 宮崎大学, 平成20年11月30日, 30Ca-3
    著者; 中尾勇貴, 末安祐介, 角口芳樹, 灘真輝, 田中徹, 西尾光弘, 郭其新
  • RFスパッタリング法によるInN薄膜成長に関する研究 ;; 2008年11月
    発表情報; 平成20年度応用物理学会九州支部学術講演会, 宮崎大学, 平成20年11月30日, 30Ca-6
    著者; 緒方正彦, 田中徹, 西尾光弘, 郭其新
  • Pドープ Zn1-xMgxTeエピタキシャル膜の電気的光学的性質に及ぼすアニーリング効果; 2008年11月
    発表情報; 平成20年度応用物理学会九州支部学術講演会, 宮崎大学, 平成20年11月30日, 30Ca-5
    著者; 井上祐輔, 野中直樹, 斉藤勝彦, 田中徹, 郭其新, 西尾光弘
  • MOVPE法によるGaAs基板上ZnTeエピタキシャル膜の作製と評価; 2008年11月
    発表情報; 平成20年度応用物理学会九州支部学術講演会, 宮崎大学, 平成20年11月30日, 30Ca-2
    著者; 末安祐介, 中尾勇貴, 角口芳樹, 田中徹, 西尾光弘, 郭其新
  • サファイア基板上ZnTeエピタキシャル成長膜のアニール効果; 2008年11月
    発表情報; 平成20年度応用物理学会九州支部学術講演会, 宮崎大学, 平成20年11月30日, 30Ca-4
    著者; 角口芳樹, 末安祐介, 中尾勇貴, 田中徹, 西尾光弘, 郭其新
  • 陽極酸化ポーラスアルミナを用いたナノ構造作製に関する研究; 2008年11月
    発表情報; 平成20年度応用物理学会九州支部学術講演会, 宮崎大学, 平成20年11月29日, 29Ba-11
    著者; 松嶋祐大, 田中徹, 西尾光弘, 郭其新
  • シンクロトロン光によるPTFE微細加工; 2008年11月
    発表情報; 平成20年度応用物理学会九州支部学術講演会, 宮崎大学, 平成20年11月29日, 29Da-8
    著者; 釘野貴史, 田中徹, 西尾光弘, 郭其新
  • Current Statues of High-Level Engineering Education in Japanese National Universities (Invited); 2008年10月
    発表情報; International Forum on New Technology, New Ideology – Innovation of High-Level Applied Talents Cultivation Model, Shanghai, October 5-6, 2008, Mo-L-7.
    著者; Qixin GUO
  • Optical Properties of ZnTe Grown on Sapphire Substrates; 2008年10月
    発表情報; The 4th Vacuum and Surface Sciences Conference of Asia and Australia, Matsue, October 28-31, 2008, 30C09.
    著者; Qixin GUO, Yuki NAKAO, Yaliu DING, Tooru TANAKA, Mitsuhiro NISHIO
  • Influence of precursor transport rate upon the optical and electrical properties of P-ZnTe homoepilayer grown by MOVPE system; 2008年10月
    発表情報; The 4th Vacuum and Surface Sciences Conference of Asia and Australia, Matsue, October 28-31, 2008, 28P001.
    著者; Xiuxun Han,Yuuki Kuramitsu,Tooru Tanaka, Qixin Guo, Mitsushiro Nishio
  • Epitaxial Growth and Characterization of AlInN Layers for Multi-Junction Tandem Solar Cells (Invited); 2008年09月
    発表情報; The 10th China Solar Photovoltaic Conference & Exhibition, Changzhou, September 19-22, 2008, F4-31.
    著者; Qixin Guo, Yaliu Ding, Tooru Tanaka, and Mitsuhiro Nishio
  • Al酸化膜を用いたAl熱拡散法によるZnTe-LEDの作製; 2008年09月
    発表情報; 平成20年第61回電気関係学会九州支部連合大会, 大分大学, 平成20年9月24日, 08-1A-05
    著者; 伊藤博昭・田中 徹・郭 其新・西尾光弘
  • 多源蒸着法によるCu2ZnSnS4薄膜の作製と太陽電池の試作; 2008年09月
    発表情報; 平成20年第61回電気関係学会九州支部連合大会, 大分大学, 平成20年9月24日, 08-1A-04.
    著者; 吉田晃周・田中 徹・郭 其新・西尾光弘
  • 有機金属気相成長法によるZn1-xMgxTeへのドーピング; 2008年09月
    発表情報; 平成20年第61回電気関係学会九州支部連合大会, 大分大学, 平成20年9月24日, 08-1A-06
    著者; 野中直樹・井上祐輔・斉藤勝彦・田中 徹・郭 其新・西尾光弘
  • Heteroepitaxial growth of InN thin films on (111) silicon substrates; 2008年07月
    発表情報; Second International Symposium on Growth of III-Nitrides, Izu, July 6-9, 2008. Mo-6.
    著者; Qixin GUO, Masahiko OGATA, Keisukei TAIRA, Tooru TANAKA, Mitsuhiro NISHIO, and Hiroshi OGAWA
  • Optical Properties of ZnTe epilayers on GaAs substrate by metalorganic vapor phase epitaxy; 2008年05月
    発表情報; The 4th Asian Conference on Crystal Growth and Crystal Technology, Sendai, May 21-24, 2008. 23FriPM2II-8-40.
    著者; Qixin Guo, Yusuke Kume, Tooru Tanaka, Mitsuhiro Nishio, and Hiroshi Ogawa
  • EFFECT OF COMPOSITIONAL RATIO ON PROPERTIES OF CU2ZNSNS4 THIN FILM FABRICATED BY CO-EVAPORATION; 2007年12月
    発表情報; The 17th International Photovoltaic Science and Engineering Conference, Fukuoka, December 3-7, 2007. 5P-P3-29.
    著者; T. Tnaka, K. Ikari, M. Nishio, Q. Guo and H. Ogawa
  • FUNDAMENTAL PROPERTIES OF EPITAXIAL ALINN SEMICONDUCTORS; 2007年12月
    発表情報; The 17th International Photovoltaic Science and Engineering Conference, Fukuoka, December 3-7, 2007. 5P-P4-13.
    著者; Q.X. Guo, T. Tanaka, M. Nishio, and H. Ogawa
  • Prospective applications of the large area, high density and periodic structure (Invited); 2007年12月
    発表情報; Workshop on Synchrotron Radiation and Nano-materials, December 18, 2007, Shanghai China. K-1.
    著者; Qixin Guo
  • Microfabrication of ZnO on PTFE template patterned by synchrotron radiation; 2007年09月
    発表情報; The 13th International Conference on II-VI compounds, Jeju, Korea, September 10-14, 2007, Tu-P-128
    著者; Q.X. Guo, Y. Mitsuishi, T. Tanaka, M. Nishio, H. Ogawa, and Y.Z. Huang
  • Surface morphology of ZnTe:P(100) homoepitaxially grown by horizontal MOVPE technique; 2007年09月
    発表情報; The 6th International Conference on Thin Film Physics and Application, Shanghai, September 25-28, 2007. P2-2.
    著者; K. Yamaguchi, Y. Kuramitsu, K. Saito, T. Tanaka, M. Nishio, Q. Guo, and H. Ogawa
  • Temperature dependence of optical properties on Al0.25In0.75N thin film; 2007年09月
    発表情報; The 6th International Conference on Thin Film Physics and Application, Shanghai, September 25-28, 2007. P1-12.
    著者; L.F. Jiang, W.Z. Shen, H. Ogawa, and Q.X. Guo
  • Heteroepitaxial growth of ZnTe thin films on sapphire substrates for terahertz devices applications; 2007年09月
    発表情報; The 6th International Conference on Thin Film Physics and Application, Shanghai, September 25-28, 2007. P3-5.
    著者; Q.X. Guo, Y. Kume, T. Tanaka, M. Nishio, and H. Ogawa
  • Epitaxial growth of InN on (111) silicon substrates; 2007年07月
    発表情報; The International Conference on Electrical Engineering 2007, HongKong, July 8-12, 2007, ICEE-080.
    著者; Qixin GUO, Keisukei TAIRA, Tooru TANAKA, Mitsuhiro NISHIO, and Hiroshi OGAWA
  • Epitaxial growth of ZnMgTe with a wide composition range on ZnTe substrate by molecular beam epitaxy; 2007年07月
    発表情報; 17th International Vacuum Congress, 13th International Conference on Surface Science, and International Conference on Nano Science and Technology, Stockholm, July 2-6, 2007, EMPP2-97.
    著者; Tanaka, Tooru; Saito, Katsuhiko; Nishio, Mitsuhiro; Guo, Qixin; Ogawa, Hiroshi
  • Improvement of MOVPE grown ZnTe:P layers by annealing treatment; 2007年07月
    発表情報; 17th International Vacuum Congress, 13th International Conference on Surface Science, and International Conference on Nano Science and Technology, Stockholm, July 2-6, 2007, EMPP2-99.
    著者; Saito, Katsuhiko; Fujimoto, Kenji; Yamaguchi, Kouji; Tanaka, Tooru; Nishio, Mitsuhiro; Guo, Qixin; Ogawa, Hiroshi
  • Growth of undoped ZnMgTe layers by metalorganic vapour phase epitaxy; 2007年07月
    発表情報; 17th International Vacuum Congress, 13th International Conference on Surface Science, and International Conference on Nano Science and Technology, Stockholm, July 2-6, 2007, EMPP2-123.
    著者; Saito, Katsuhiko; Kouno, Daisuke; Tanaka, Tooru; Nishio, Mitsuhiro; Guo, Qixin; Ogawa, Hiroshi
  • Epitaxial Growth of Ternary AlInN on Sapphire Substrates; 2007年06月
    発表情報; 2007 International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies,Nagano,June 19-22, 2007, P1-20.
    著者; Q.X. Guo, T. Tanaka, M. Nishio, and H. Ogawa
  • Nanofabrication of PTFE films by synchrotron radiation; 2007年06月
    発表情報; 2007 International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies,Nagano,June 19-22, 2007, P1-41.
    著者; 
    Q.X. Guo, T. Kugino, Y. Mitsuishi, T. Tanaka, M. Nishio, and H. Ogawa
  • SAGA Light Sourceの現状及びシンクロトロン光を用いたプロセス技術; 2007年04月
    発表情報; 電気学会、光・量子デバイス研究会 平成19年4月27日、大型放射光施設 Spring-8
    著者; 郭其新、田中徹、西尾光弘、小川博司
  • FABRICATION OF MICRO-ARRAY OF ZINC OXIDE SEMICONDUCTORS; 2007年01月
    発表情報; International Conference on Integration and Commercialization of Micro and Nano-systems, January 10-13, 2007, Sanya, Hainan, China, MNC2007-21010
    著者; Q.X. Guo, N. Uesugi, Y. Kume, Y. Mitsuishi, T. Tanaka, M. Nishio, H. Ogawa, A.Yoshida, and Y.Z. Huang
  • Electronic Band Structures and Transport Properties of Wurtzite Indium Nitride Grown by Metal-Organic Vapor Phase Epitaxy; 2006年
    発表情報; 13th International Conference on Metal Organic Vapor Phase Epitaxy, Miyazaki, May 22-26, 2006, Tu-P.12.
    著者; W.Z. Shen, Z.W. Jia, J. Chen, H.B. Ye, H. Ogawa, and Q.X. Guo
  • Low-pressure metalorganic vapor phase epitaxy growth of ZnTe; 2006年
    発表情報; 13th International Conference on Metal Organic Vapor Phase Epitaxy, Miyazaki, May 22-26, 2006, Tu-P.39.
    著者; Q. Guo, Y. Kume, T. Tanaka, M. Nishio, H. Ogawa, and W. Shen
  • Growth and Characterization of ZnTe epilayers on GaAs substrate by metalorganic vapor phase epitaxy; 2006年
    発表情報; 13th International Conference on Metal Organic Vapor Phase Epitaxy, Miyazaki, May 22-26, 2006, Tu-P.40.
    著者; Y. Kume, Q. Guo, T. Tanaka, M. Nishio, and H. Ogawa
  • Growth Characteristics of ZnMgTe Layer on ZnTe Substrate by Metalorganic Vapor Phase Epitaxy; 2006年
    発表情報; 13th International Conference on Metal Organic Vapor Phase Epitaxy, Miyazaki, May 22-26, 2006, Tu-P.41.
    著者; K. Saito, T. Yamashita, D. Kouno, T. Tanaka, M. Nishio, Q. Guo, and H. Ogawa
  • Effects of dopant transport rate upon photoluminescence and electrical properties of ZnTe in atmospheric pressure MOVPE using trisdimethlaminophosphorus; 2006年
    発表情報; 13th International Conference on Metal Organic Vapor Phase Epitaxy, Miyazaki, May 22-26, 2006, We-B2.1
    著者; T. Tanaka, M. Nishio, K. Hayashida, K. Fujimoto, Q. Guo, and H. Ogawa
  • Growth and Characterization of AlInN Films; 2006年
    発表情報; First International Symposium on Growth of III-Nitride, June 4 - 7, 2006, Linköping, Sweden, WeP-09.
    著者; Q.X. Guo, Y. Okazaki, Y. Kume, T. Tanaka, M. Nishio, and H. Ogawa
  • Fabrication of ZnTe Epilayers for Terahertz Devices Applications; 2006年
    発表情報; 2006 Joint 31st International Conference on Infrared and Millimeter Waves and 14th International Conference on Terahertz Electronics, September 18-22, 2006, Shanghai, WedP-42
    著者; Q.X. Guo, Y. Kume, Y. Fukuhara, T. Tanaka, M. Nishio, H. Ogawa, M. Hiratsuka, M. Tani, and M. Hangyo,
  • Fabrication of Zinc Oxide Microstructures Using Synchrotron Light; 2006年
    発表情報; The 7th Japan-Korea Joint Workshop on Advanced Semiconductor Processes and Equipments, November 15-17, 2006, Nara, P14
    著者; Q.X. Guo, N. Uesugi, Y. Kume, Y. Mitsuishi, T. Tanaka, M. Nishio, H. Ogawa, A. Yoshida, Y. Huang,
  • Synchrotron Light Applications for Characterization of New Materials (Invited Plenary Talk); 2006年
    発表情報; OPCM (Optical Properties on Condensed Materials 2006), August 4-9, 2006, Xiamen
    著者; Qixin GUO
  • Fabrication of stannite Cu2ZnSnS4 thin films by physical vapor deposition,; 2006年
    発表情報; 15th International Conference on Ternary and Multinary Compounds, Kyoto, March 6-10, 2006, Tue-P-28B.
    著者; Tooru Tanaka, Daisuke Kawasaki, Mitsuhiro Nishio, Qixin Guo and Hiroshi Ogawa
  • Optical and Electrical Properties of Phosphorus-Doped ZnMgTe Bulk Crystals Grown by Bridgman Method,; 2006年
    発表情報; 15th International Conference on Ternary and Multinary Compounds, Kyoto, March 6-10, 2006, Wed-P-15B.
    著者; Katsuhiko Saito, G.enkon So, Tooru Tanaka, Mitsuhiro Nishio, Qixin Guo and Hiroshi Ogawa
  • Design of Beamline BL9 at Saga Light Source,; 2006年
    発表情報; 9th International Conference on Synchrotron Radiation Instrumentation, Daegu, Korea, May 28 – June 2, 2006, DP-37.
    著者; Tooru Tanaka, Hiroshi Ogawa, Masao Kamada, Mitsuhiro Nishio, Masataka Masuda, Qixin Guo, Kazuki Hayashida, Yuzi Kondo, Teruaki Motooka, Daisuke Yoshimura, Hiroyuki Setoyama, and Toshihiro Okajima,
  • Characterization of Al-doped ZnTe layer fabricated by Al thermal diffusion,; 2006年
    発表情報; International Conference on Nanoscience and Technology 2006, Basel, July 30, 2006 – August 04, 2006.
    著者; Tooru Tanaka, Qixin Guo, Mitsuhiro Nishio, and Hiroshi Ogawa,
  • SIMS study of Al thermal diffusion in ZnTe,; 2006年
    発表情報; 2006 E-MRS Fall Meeting, Warsaw, September 4-8, 2006.
    著者; Tooru Tanaka, Norihiro Murata, Katsuhiko Saito, Qixin Guo, Mitsuhiro Nishio, and Hiroshi Ogawa,
  • Post-annealing effect upon phosphorus-doped ZnTe homoepitaxial layers grown by MOVPE,; 2006年
    発表情報; 2006 E-MRS Fall Meeting, Warsaw, September 4-8, 2006.
    著者; Katsuhiko Saito, Kenji Fujimoto, Kouji Yamaguchi, Tooru Tanaka, Mitsuhiro Nishio, Qixin Guo, Hiroshi Ogawa,
  • Influence of surface treatment on properties of ZnTe LED fabricated by Al thermal diffusion; 2006年
    発表情報; The 7th Japan-Korea Joint Workshop on Advanced Semiconductor Processes and Equipments, November 15-17, 2006, Nara, P24
    著者; TOORU TANAKA, KATSUHIKO SAITO, MITSUHIRO NISHIO, QIXIN GUO, AND HIROSHI OGAWA
  • Epitaxial growth properties of AlN films on sapphire substrates by reactive sputtering; 2005年
    発表情報; THE EIGHTH INTERNATIONAL SYMPOSIUM ON SPUTTERING & PLASMA PROCESSES Kanazawa, June 8, 2005
    著者; Q.X. Guo, T. Tanaka, M. Nishio, and H. Ogawa
  • Optical Properties of Anodic Nanochannel Alumina; 2005年
    発表情報; 15th International Conference on Dynamical Processes in Exited States of Solids Shanghai, August 3, 2005
    著者; Q.X. Guo, Y. Hachiya, T. Tanaka, M. Nishio, and H. Ogawa
  • Growth of AlInN films for multi-junction tandem solar cells; 2005年
    発表情報; The 15th International Photovoltaic Science and Engineering Conference and Solar Energy Exhibition Shanghai, October 13, 2005
    著者; Q.X. Guo, Y. Okazaki, Y. Kume, T. Tanaka, M. Nishio, and H. Ogawa
  • Effect of surface treatment on properties of ZnTe LED fabricated by Al thermal diffusion,; 2005年
    発表情報; 11th International Conference on II-VI Compounds, Warsaw, September 12-16, 2005.
    著者; Tooru Tanaka, Kazuki Hayashida, Katsuhiko Saito, Mitsuhiro Nishio, Qixin Guo, and Hiroshi Ogawa,
  • Effects of substrate temperature upon photoluminescence and electrical properties of ZnTe in atmospheric pressure MOVPE using tris-dimethlaminophosphorus,; 2005年
    発表情報; 11th International Conference on II-VI Compounds, Warsaw, September 12-16, 2005.
    著者; Kazuki Hayashida, Tooru Tanaka, Mitsuhiro Nishio, Qixin Guo, T. Tanigawa, and Hiroshi Ogawa,
  • Phosphorus-Doped ZnMgTe Bulk Crystals Grown by Vertical Bridgman Method,; 2005年
    発表情報; 11th International Conference on II-VI Compounds, Warsaw, September 12-16, 2005.
    著者; Katsuhiko Saito, Keisuke Kinoshita, Tooru Tanaka, Mitsuhiro Nishio, Qixin Guo, and Hiroshi Ogawa,
  • Growth of Boron-Doped ZnTe Homoepitaxial Layer by Metalorganic Vapor Phase Epitaxy,; 2005年
    発表情報; 11th International Conference on II-VI Compounds, Warsaw, September 12-16, 2005.
    著者; Katsuhiko Saito, Tetsuo Yamashita, Tooru Tanaka, Mitsuhiro Nishio, Qixin Guo, and Hiroshi Ogawa,
  • Extended X-ray absorption fine structure study of Al-doped ZnTe; 2004年
    発表情報; 4th Conference on Synchrotron Radiation in Materials Science Grenoble, August 23, 2004.
    著者; Q.X. Guo , J. Ding, K. Hayashida, T. Tanaka, M. Nishio and H. Ogawa
  • Synchrotron radiation-excited etching of ZnTe using Ar gas,; 2004年
    発表情報; 4th Conference on Synchrotron Radiation in Materials Science, Grenoble, August 23-25, 2004, PEM13.
    著者; Tooru Tanaka, Yusuke Kume, Kazuki Hayashida, Mitsuhiro Nishio, Qixin Guo, Hiroshi Ogawa,
  • Preparation of Cu2ZnSnS4 thin films by hybrid sputtering,; 2004年
    発表情報; 14th International Conference on Ternary and Multinary Compounds, September 27-October 1, 2004, Denver.
    著者; Tooru Tanaka, Takeshi Nagatomo, Daisuke Kawasaki, Mitsuhiro Nishio, Qixin Guo, Akihiro Wakahara, Akira Yoshida and Hiroshi Ogawa,
  • Specific Contact Resistance of Pd Electroless to p-type ZnTe; 2004年
    発表情報; International Conference on Electrical Engineering 2004, Sapporo
    著者; Mitsuhiro Nishio, Tooru Tanaka, Qixin Guo, Hiroshi Ogawa
  • Growth properties of reactive sputtered AlInN films; 2003年
    発表情報; 5th International Conference on Nitride Semiconductors, Nara, May 25-30, 2003, Mo-P1.029.
    著者; Q.X. Guo, K. Yahata, T. Tanaka, M. Nishio and H. Ogawa
  • Low-temperature epitaxial growth of InN and AlInN; 2003年
    発表情報; International Indium Nitride Workshop, Fremantle, Australia, November 19, p74, 2003.
    著者; Qixin Guo, Tooru Tanaka, Mitsuhiro Nishio, and Hiroshi Ogawa
  • Synchrotron Radiation-Excited Etching of ZnTe,; 2003年
    発表情報; 8th International Conference on Synchrotron Radiation Instrumentation (SRI 2003), San Francisco, August 25-29, 2003, 10.114.
    著者; Tooru Tanaka, Yusuke Kume, Sinji Tokunaga, Kazuki Hayashida, Mitsuhiro Nishio, Qixin Guo, and Hiroshi Ogawa,
  • Depth dependence of photoluminescence spectra of Al thermal diffusion layer in ZnTe LED; 2003年
    発表情報; 11th International Conference on II-VI Compounds, Niagara Falls, New York, September 22-26, 2003, Th4.11.
    著者; Tooru Tanaka, Yusuke Kume, Mitsuhiro Nishio, Qixin Guo, and Hiroshi Ogawa,
  • Influence of Al thermal diffusion time on electroluminescence properties of ZnTe LED,; 2003年
    発表情報; 11th International Conference on II-VI Compounds, Niagara Falls, New York, September 22-26, 2003, Th4.10.
    著者; Tooru Tanaka, Yusuke Kume, Mitsuhiro Nishio, Qixin Guo, and Hiroshi Ogawa,
  • Photoluminescence properties of ZnTe homoepitaxial films deposited by photo-excited growth using synchrotron-radiation light,; 2002年
    発表情報; Third International Conference on Synchrotron Radiation in Materials Science, Singapore, January 21-24 2002, 2355, p.102.
    著者; Tooru Tanaka, Kazuki Hayashida, Shanli Wang, Qixin Guo, Mitsuhiro Nishio, and Hiroshi Ogawa,
  • Photoluminescence properties of chlorine-doped ZnTe grown by metalorganic vapor phase epitaxy,; 2002年
    発表情報; 11th International Conference on Metal Organic Vapour Phase Epitaxy, Berlin, June 3-7, 2002, Mon-P22, p.83.
    著者; Tooru Tanaka, Kazuki Hayashida, Shanli Wang, Mitsuhiro Nishio, Qixin Guo, and Hiroshi Ogawa,
  • MOVPE Growth and characterization of high quality ZnTe homoepitaxial layers; 2002年
    発表情報; 11th International Conference on Metal Organic Vapour Phase Epitaxy, Berlin, June 3-7, 2002, Tue-P16, p.136.
    著者; Tooru Tanaka, Kazuki Hayashida, Shanli Wang, Mitsuhiro Nishio, Qixin Guo, and Hiroshi Ogawa,
  • Cathodoluminescence study of highly ordered InGaAs quantum dots,; 2002年
    発表情報; 2nd International Conference on Semiconductor Quantum Dots, Tokyo, September 30 - October 3, 2002.
    著者; Q. Guo , X. Mei, H. Ogawa, H. Ruda,
  • Heteroepitaxial Growth of GaN on (111)GaAs Substrates; 2001年
    発表情報; 13th International Conference on Crystal Growth (ICCG13), Kyoto, July 30-August 4, 2001, 02a-SB2-05
    著者; Q.X. Guo, A. Okada, H. Kidera, T. Tanaka, M. Nishio, H. Ogawa
  • Effect of Gas Flow Rate on Properties of ZnTe Epitaxial Layers Grown by Horizontal Metalorganic Vapor Phase Epitaxy; 2001年
    発表情報; 13th International Conference on Crystal Growth (ICCG13), Kyoto, July 30-August 4, 2001, 02a-SB3-11
    著者; Tooru Tanaka, Kazuki Hayashida, Mitsuhiro Nishio, Yong Chang, Jun Wang, Shanli Wang, Qixin Guo, Hiroshi Ogawa
  • Growth of Arsenic-Doped ZnTe by MOVPE using Triethylarsine; 2001年
    発表情報; 13th International Conference on Crystal Growth (ICCG13), Kyoto, July 30-August 4, 2001, 02a-SB3-12
    著者; Kazuki Hayashida, Tooru Tanaka, Mitsuhiro Nishio, Yong Chang, Jun Wang, Shanli Wang, Qixin Guo, Hiroshi Ogawa
  • Investigation into the influence of GaN buffer layer on crystallinity of InN; 2001年
    発表情報; 13th International Conference on Crystal Growth (ICCG13), Kyoto, July 30-August 4, 2001, 03a-SB2-12
    著者; Q.X. Guo, A. Okada, H. Kidera, T. Tanaka, M. Nishio, H. Ogawa
  • Arsenic and Phosphor P-type Doping of Bulk ZnTe for LED Applications; 2001年
    発表情報; 28th International Symposium on Compound Semiconductors 2001 (ISCS2001), Tokyo, October 1-4, 2001, MoP-4.
    著者; Y. Chang, S.L. Wang, T. Tanaka, K. Hayashida, S. Kanamaru, Q.X. Guo, M.Nishio, H. Ogawa
  • Photoluminescence properties of iodine-doped ZnTe grown by metalorganic vapor phase epitaxy; 2001年
    発表情報; 28th International Symposium on Compound Semiconductors 2001 (ISCS2001), Tokyo, October 1-4, 2001, WeP-11
    著者; Tooru Tanaka, Kazuki Hayashida, Hiroki Harada, Mitsuhiro Nishio, Shanli Wang, Yong Chang, Qixin Guo, and Hiroshi Ogawa
  • Epitaxial Growth of GaN on (111)GaAs Substrates,; 2000年
    発表情報; The 4th International Conference on THIN FILM PHYSCICS AND APPLICATIONS, Shanghai, May 8-11, 2000, SC-011.
    著者; Q.Guo, A.Okada, M.Nishio and H.Ogawa,
  • Photoluminescence of ZnTe Homoepitaxial Films Deposited by Synchrotron Radiation-Excited Growth (Invited),; 2000年
    発表情報; The 4th International Conference on THIN FILM PHYSCICS AND APPLICATIONS, Shanghai, May 8-11, 2000, SC-043
    著者; M.Nishio, K.Hayashida, H.Harada, Y.Mitsuishi, Q.Guo and H.Ogawa,
  • Tungsten Thin Films Deposition on Tool Steel Substrates,; 2000年
    発表情報; The 4th International Conference on THIN FILM PHYSCICS AND APPLICATIONS, Shanghai, May 8-11, 2000, ME-15.
    著者; Q.Guo, M.Nishio and H.Ogawa,
  • Reactive Ion Etching of Indium Nitride Thin Films,; 2000年
    発表情報; The 4th International Conference on THIN FILM PHYSCICS AND APPLICATIONS, Shanghai, May 8-11, 2000, SC-066.
    著者; Q.Guo, N.Matsuse, M.Nishio and H.Ogawa,
  • Ohmic Contacts to N-type ZnTe Grown by MOVPE,; 2000年
    発表情報; The 4th International Conference on THIN FILM PHYSCICS AND APPLICATIONS, Shanghai, May 8-11, 2000, SC-082.
    著者; K.Hayashida, M.Nishio, H.Harada, Y.Mitsuishi, Q.Guo and H.Ogawa,
  • Effects of photo-illumination upon photoluminescence properties of ZnTe in atmospheric pressure MOVPE,; 2000年
    発表情報; The Tenth International Conference on Metalorganic Vapor Phase Epitaxy, Sapporo, June 5-9, 2000.
    著者; K.Hayashida, M.Nishio, H.Harada, S.Furukawa, Q.Guo and H.Ogawa,
  • SR-excited growth characteristics of ZnTe homoepitaxial films and their photoluminescence properties,; 2000年
    発表情報; 7th International Conference on Synchrotron Radiation Instrumentation, Berlin, August 21-25, 2000.
    著者; M.Nishio, K.Hayashida, H.Harada, Y.Mitsuishi, Q.Guo and H.Ogawa,
  • Growth of GaN films on (111)GaAs substrates,; 2000年
    発表情報; International workshop on nitride semiconductors, Nagoya, September 25-28, 2000, PTD05.
    著者; Q.X.Guo, A.Okada, M.Nishio, and H.Ogawa,
  • Temperature dependence of AlN reflectance spectra,; 2000年
    発表情報; International workshop on nitride semiconductors", Nagoya, September 25-28,2000, PTE38.
    著者; Q.X.Guo, A.Okada, M.Nishio, H.Ogawa, K.Fukui, and A. Yoshida,
  • Reflection spectra of Al1-xGaxN,; 2000年
    発表情報; International workshop on nitride semiconductors, Nagoya, September 25-28, 2000, PTE37.
    著者; K.Fukui, H.Miura, A.Okada, Q.Guo, S.Tanaka, H.Hirayama, and Y.Aoyagi,
  • Recent studies on MOVPE growth of ZnTe (Invited),; 2000年
    発表情報; Optics and Optoelectronic Inspection and Control: Tchniques, Application, & Inspection, Beijing, November 8-10, 2000.
    著者; M. Nishio, K. Hayashida, H. Harada, Y. Mitsuishi, Q. Guo, H. Ogawa,
  • Recent progress on low-temperature epitaxial growth of nitride semiconductors (Invited),; 2000年
    発表情報; Optics and Optoelectronic Inspection and Control: Tchniques, Application, & Inspection, Beijing, November 8-10, 2000.
    著者; Q. Guo, M. Nishio, H. Ogawa,
  • Study on novel non-thermal epitaxial technique of compound semiconductor (Invited),; 2000年
    発表情報; INDO-JAPANESE WORKSHOP ON MICRO SYSTEM TECHNOLOGY, Delhi, November 23-25, 2000, I-7.
    著者; M.Nishio, K.Hayashida, Q.Guo, H.Ogawa,
  • Epitaxial Growth of AlInN by RF Magnetron Sputtering,; 2000年
    発表情報; The 42nd Annual Meeting of the Division of Plasma Physics and the 10th International congress on Plasma Physics, Quebec, Canada, October 23-27, 2000.
    著者; Q.X.Guo, A.Okada, M.Nishio, and H.Ogawa,
  • Non-thermal epitaxial growth of ZnTe using synchrotron radiation,; 1999年
    発表情報; The 1st UK-JAPAN International Seminar of Application of Synchrotron Radiation to Studies of Nano-Structured Materials pp.85-88. March 26-27, 1999, Okazaki
    著者; Hiroshi Ogawa, Mitsuhiro Nishio and Qixin Guo,
  • PHOTOLUMINESCENCE PROPERTIES OF ALUMINUM-DOPED ZnTe LAYERS GROWN BY MOVPE,; 1999年
    発表情報; First Vacuum and Surface Sciences Conference of Asia and Australia, ThP-79 September 8-10, 1999, Tokyo
    著者; M.Nishio, K.Hayashida, Q.Guo, H.Ogawa,
  • GROWTH CHARACTERISTICS OF ZnTe IN A VERTICAL MOVPE SYSTEM,; 1999年
    発表情報; First Vacuum and Surface Sciences Conference of Asia and Australia, FrP-78, September 8-10, 1999, Tokyo.
    著者; M.Nishio, K.Hayashida, Q.Guo, H.Ogawa,
  • EFFECT OF THE SUBSTRATE PRETREATMENT ON THE EPITAXIAL GROWTH OF INDIUM NITRIDE,; 1999年
    発表情報; First Vacuum and Surface Sciences Conference of Asia and Australia, September 8-10, 1999, Tokyo.
    著者; Q.X.Guo, A.Okada, M.Nishio, and H.Ogawa,
  • GROWTH OF InN FILMS ON (111) GaAs SUBSTRATES BY REACTIVE MAGNETRON SUPUTTERING,; 1999年
    発表情報; First Vacuum and Surface Sciences Conference of Asia and Australia, September 8-10, 1999, Tokyo.
    著者; Q.X.Guo, K.Murata, M.Nishio, and H.Ogawa,
  • In-EDGE X-RAY ABSORPTION FINE STRUCTURE OF InN AND InGaN FILMS,; 1999年
    発表情報; The Third International Cenference on Nitride Semiconductors, Montpellier, France, July 5, 1999.
    著者; K.P.O'Donnell, R.W.Martin, M.E.White, J.F.W.Mosselmans, and Q.X.Guo,
  • Effects of photo-assisted MOVPE upon the doping of aluminum into ZnTe,; 1999年
    発表情報; The 9th International Conference on II-VI Compounds, p.41, November 1-5, 1999, Kyoto
    著者; K. Hayashida, M. Nishio, H. Harada, S. Furukawa, Q. Guo, and H. Ogawa,
  • Effect of dopant flow rate upon photoluminescence properties in Aluminum-doped ZnTe layers grown by MOVPE,; 1998年
    発表情報; 14th International Vacuum Congress, Birmingham, August 31-September 4, 1998, EM.PTh.27.
    著者; M.Nishio, Q.X.Guo, and H.Ogawa,
  • Homoepitaxial growth of ZnTe by synchrotron radiation using metalorganic sources,; 1998年
    発表情報; 14th International Vacuum Congress, Birmingham, August 31-September 4, 1998, EM.PTh.41.
    著者; M.Nishio, T.Enoki, Q.X.Guo, H.Ogawa,
  • Structural and electrical properties of indium nitride films by RF magnetron sputtering,; 1998年
    発表情報; 14th International Vacuum Congress, Birmingham, August 31-September 4, 1998, EM.PTh.34.
    著者; Q.X.Guo, N.Shingai, M.Nishio, and H.Ogawa,
  • Ohmic contacts to p-type ZnTe using electroless Pd,; 1998年
    発表情報; 14th International Vacuum Congress, Birmingham, August 31-September 4, 1998,
    著者; M.Nishio, Y.Fujiwara, Q.X.Guo, and H.Ogawa,
  • Electronic structure of indium nitride,; 1998年
    発表情報; The Second International Conference on Synchrotron Radiation in Materials Science, Kobe, November 1-2, 1998.
    著者; Q.X.Guo, M.Nishio, H.Ogawa, A.Wakahara, and A.Yoshida,
  • Low temperature growth of ZnTe homoepitaxial layers by synchrotron radiation using metalorganic sources,; 1998年
    発表情報; The Second International Conference on Synchrotron Radiation in Materials Science, Kobe, November 1-2, 1998.
    著者; M.Nishio, T.Enoki, Y.Mitsuishi, Q.X.Guo, and H.Ogawa,
  • Growth of InN films by rf Magnetron Sputtering,; 1997年
    発表情報; The Second International Conference on Nitride Semiconductors, October 27-31, 1997,Tokushima,
    著者; Q.X.Guo, N.Shingai, M.Nishio, and H.Ogawa,
  • Optical Spectra of AlN in Vacuum Ultraviolet Region,; 1997年
    発表情報; The Second International Conference on Nitride Semiconductors, Tokushima, October 27-31, 1997,
    著者; Q.X.Guo, M.Nishio, H.Ogawa, and A.Yoshida,
  • Optical properties of zinc telluride; 1996年
    発表情報; Eight International Conference on Solid Films and Surfaces (Osaka) (1996)
    著者; Q.X. Guo, M. Ikijiri, M. Nishio, and H. Ogawa
  • Optical spectra of InN single crystal in VUV region; 1995年
    発表情報; The International Conference on Vacuum Ultraviolet Radiation Physics, (Tokyo) Th65 (1995).
    著者; Q.X.Guo, H.Ogawa and A.Yoshida
  • Epitaxial relationship between AlxIn1-xN layers and (0001)α-Al2O3 substrates; 1995年
    発表情報; Topical Workshop on III-V Nitrides (Nagoya) P-30 (1995).
    著者; Q.X.Guo, H.Ogawa, N.Itoh and A.Yoshida
  • Growth and some properties of AlxIn1-xN crystalline thin films; 1994年
    発表情報; Second International Conference on Thin Film Physics and Applications. (Shanghai) (1994).
    著者; Q.X.Guo, H.Ogawa and A.Yoshida
  • Growth and some properties of AlxIn1-xN by microwave excited metalorganic vapor phase epitaxy; 1994年
    発表情報; The Eighth International Conference on Vapour Growth and Epitaxy, (Germany) (1994).
    著者; Q.X.Guo, H.Ogawa and A.Yoshida

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  • Characterization of Advanced Functional Materials; 2007年03月
    発表情報; Shanghai Jiaotong University, March 9, 2007
    著者; Qixin GUO
  • 未来的電子科学和技術(中国語); 2007年03月
    発表情報; Shanghai Dianji University, March 9, 2007
    著者; Qixin GUO
  • シンクロトロン光を用いた低誘電率膜の成長と加工に関する研究; 2007年03月
    発表情報; 九州シンクロトロン光研究センター、平成18年度研究成果報告会 2007年3月20日
    著者; 郭其新、釘野貴史、上杉望夢、光石芳明、田中徹、西尾光弘、小川博司
  • 電気電子工学からみた未来技術; 2007年02月
    発表情報; 佐賀県立致遠館高校SSH事業 2007年2月3日
    著者; 郭其新
  • Non-thermal Process Technology by Using Synchrotron Light; 2007年
    発表情報; Joint Seminar between Saga University Synchrotron Light Application Center and State Key Lab of Metal Matrix Composites, Shanghai Jiaotong University on Material Science and Synchrotron Light -2007,Saga University, Japan March 1, 2007
    著者; Qixin GUO
  • Low-temperature Epitaxial Growth and Microfabrication of Semiconductors using Synchrotron Light; 2006年12月
    発表情報; Joint Seminar between Shanghai Institute of Applied Physics and Saga University on Synchrotron Light Applications, Shanghai Institute of Applied Physics,December 4, 2006
    著者; Qixin GUO
  • シンクロトロン光による化合物半導体の低温成長と微細加工(招待講演); 2006年09月
    発表情報; 九州大学21世紀COEプログラム “佐賀県シンクロトロン光施設SLSにおける産学連携講演討論会” ~ 大学院生への放射光科学教育を主体として~ 2006年9月13日 鳥栖
    著者; 郭其新
  • マグネトロンスパッタリング法による窒化物薄膜成膜とその光学特性; 2006年09月
    発表情報;  (株)技術情報協会セミナー 2006年9月29日、東京
    著者; 郭其新
  • Experimental program and beamlines of Saga synchrotron light; 2006年09月
    発表情報; Joint Seminar between Saga University Synchrotron Light Application Center and State Key Lab of Metal Matrix Composites, Shanghai Jiaotong University on Material Science and Synchrotron Light - Shanghai Jiaotong University, September 22, 2006.
    著者; Qixin GUO
  • 日韓両国の高等技術教育の現状; 2006年03月
    発表情報; Shanghai Dianji University, 2006年3月3日
    著者; 郭其新
  • Low temperature epitaxial growth of semiconductors using synchrotron light; 2006年03月
    発表情報; Shanghai Jiaotong University, March 1, 2006
    著者; Qixin GUO
  • Current status of researches on microelectro mechanical systems,; 2005年
    発表情報; Shanghai Dianji University, March 3, 2005
    著者; Qixin GUO
  • On the philosophy of education and research in university,; 2005年
    発表情報; Shanghai Dianji University, October 14, 2005.
    著者; Qixin GUO
  • Synchrotron Light Applications in Electronic Materials,; 2005年
    発表情報; Busan National University, December 26, 2005.
    著者; Qixin GUO
  • Growth and Characterization of Semiconductors Using Synchrotron Light,; 2005年
    発表情報; Yeungnam University, December 27, 2005.
    著者; Qixin GUO
  • Synchrotron Light Applications in Electronic Materials,; 2005年
    発表情報; Seoul National University December 29, 2005.
    著者; Qixin GUO
  • ecent progresses on nano-structured materials,; 2004年
    発表情報; Shanghai Dianji University, March 5, 2004
    著者; Qixin GUO
  • Characterization of semiconductors using synchrotron light,; 2004年
    発表情報; Institute of Applied Physics, Chinese Academy of Sciences, December 15, 2004
    著者; Qixin GUO
  • Synchrotron Light Application in Semiconductor Materials,; 2004年
    発表情報;  Shanghai Jiaotong University, December 14, 2004
    著者; Qixin GUO
  • Fabrication and Characterization of Nanostructured Semiconductors,; 2003年
    発表情報; Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, March 6, 2003
    著者; Qixin GUO
  • Current status of nano-structured semiconductors,; 2003年
    発表情報; Shanghai Jiaotong University, March 5, 2004
    著者; Qixin GUO
  • Low temperature growth of semiconductors by synchrotron radiation,; 2001年
    発表情報; The Energenius Centre for Advance Nanotechnology, University of Toronto, Canada, September 18, 2001.
    著者; Qixin GUO

知的財産権の出願等(著作権は除く)

  • 化合物半導体の加工方法、及び化合物半導体の加工装置; 2003年
    発表情報; 特願2003-198375/特許登録3783056号
    著者; 小川博司,西尾光弘,郭其新,田中徹
  • II-VI族化合物半導体のドライエッチング方法; 2002年
    発表情報; 特願2002-89303
    著者; 小川博司,西尾光弘,郭其新,田中徹
  • II-VI族化合物半導体結晶を基板とする光電変換機能素子の製造方法; 2002年
    発表情報; 特願2002-89312
    著者; 小川博司,西尾光弘,郭其新,田中徹
  • 有機金属気相成長によるp型のテルル化亜鉛の製造方法; 2002年
    発表情報; 特願2002-89318
    著者; 小川博司,西尾光弘,郭其新,田中徹

招待講演・特別講演(学会シンポジウム等での講演を含む)

  • Characteristics of gallium oxide based wide bandgap semiconductors (Invited Talk); 2017年10月
    発表情報; TACT2017 International Thin Film Conference, Oct. 15-18, National Dong Hwa Univesity, C-I-0039, Oct. 17, 12:30-12:50, 2017.
    著者; Qixin GUO
  • Epitaxial growth of gallium oxide based wide bandgap semiconductors (Invited); 2017年06月
    発表情報; Collaborative Conference on Materials Research (CCMR) 2017, 26-30 June 2017, International Convention Center (ICC) Jeju, South Korea, Room 301A 12:00-12:30, June 26, 2017.
    著者; Qixin GUO
  • Growth and characterization of gallium oxide based wide bandgap semiconductors (Invited); 2016年11月
    発表情報; Suzhou Institute of Nano-Tech and Nano-Bionics, Chineses Academy of Sciences, Nov. 1st, 16:00-17:30, 2016
    著者; Qixin Guo
  • Synchrotron Light Applications for researches on third generation semiconductors (Invited Talk); 2016年11月
    発表情報; Department of Physics, Shanghai Normal University, Nov. 4th, 15:00-16:30, 2016
    著者; Qixin Guo
  • Current status of researches on third generation semiconductors (Invited Talk); 2016年11月
    発表情報; School of Electronic and Electric Engineering, Shanghai university of Engineering Science, Nov. 4th, 9:30-10:40, 2016
    著者; Qixin Guo
  • Epitaxial growth and characterization of gallium oxide based wide bandgap semiconductors (Invited Talk); 2016年10月
    発表情報; International Conference on Optoelectronics and Microelectronics Technology and Application OMTA 2016, Shanghai, 10-12 Oct. Conf, 5,6, Session 4, 11:00-11:25, 12 Oct. 2016
    著者; Qixin GUO
  • Epitaxial growth of ZnTe films y MOCVD (Invited talk); 2016年08月
    発表情報; The 14th national conference on MOCVD, August 16-19, 2016, Yanji, ID-5, 8:00-8:25, August 28.
    著者; Qixin Guo
  • Growth and characterization of (AlGa)2O3 films (Invited Talk); 2016年07月
    発表情報; The International Workshop on UV Materials and Devices (IWUMD-2016), Peking University, July 27-71, 2016, I-21, 13:30-13:55, July 29.
    著者; Qixin Guo
  • 光电材料的应用和研究动态; 2016年03月
    発表情報; 上海交通大学、2016年3月11日10:00-11:40
    著者; 郭其新
  • Introduction to Synchrotron Light (Invited talk); 2016年01月
    発表情報; Korea University of Technology and Education, January 19, 2016.
    著者; Qixin GUO
  • Characteristics of synchrotron light (Invited Talk); 2016年01月
    発表情報; Korea University of Technology and Education, January 20, 2016.
    著者; Qixin GUO
  • Characterization of compound semiconductors by using synchrotron light (Invited Talk); 2016年01月
    発表情報; Korea University of Technology and Education, January 21, 2016.
    著者; Qixin GUO
  • Epitaxial Growth and Characterization of Nitride Semiconductors for Multi-Junction Tandem Solar Cells (Invited Talk); 2015年12月
    発表情報; 2015 INTERNATIONAL CONFERENCE FOR LEADING AND YOUNG MATERIALS SCIENTISTS (IC-LYMS 2015), Dec 24, – Dec 27, 2015 , Sanya, Dec. 25, 2015, 13:30-14:00.
    著者; Qixin GUO
  • Formation of metastable phases and nanograined Silicon by severe plastic deformation under high pressure (Invited Talk); 2015年11月
    発表情報; 11th China SoG Silicon and PV Power Conference, Nov. 26-28, 2015, Hangzhou, China. Nov. 28, 16:30-16:50.
    著者; Yoshifumi Ikoma, Katsuhiko Saito, Qixin Guo, and Zenji Horita
  • Synchrotron Light Applications for Characterizing Semiconductor Materials (Invited Talk); 2015年10月
    発表情報; Peking University, October 8, 2015, 15:00-16:30
    著者; Qixin GUO
  • Epitaxial Growth and Characterization of (GaIn)2O3 and (AlGa)2O3 Films (Invited Talk); 2015年10月
    発表情報; Institure of Physics, Chinese Academy of Sciences, October 9 , 2015, 10:00-11:30
    著者; Qixin GUO
  • Synchrotron Light Applications for Characterizing Semiconductor Materials (Invited Talk); 2015年10月
    発表情報; Tsinghua University, October 13, 2015, 10:00-11:30
    著者; Qixin GUO
  • Epitaxial growth and characterization of (GaIn)2O3 and (AlGa)2O3 films (Invited Talk); 2015年10月
    発表情報; The 2015 International Symposium of the Electronic Ceramics Materials and its Application (ISECMA-2015), Oct. 28-30, Shanghai, I-16, 16:20-16:45, Oct. 28, 2015.
    著者; Qixin GUO
  • Tunable bandgap of Ga2O3 based semiconductors (Invited Talk); 2015年08月
    発表情報; 7th National Conference on ZnO in China, Kunming, August 16-18, 2015.
    著者; Qixin Guo, Fabi Zhang, Katsuhiko Saito, Tooru Tanaka, Mitsuhiro Nishio
  • Epitaxial growth and characterization of compound semiconductors (Invited Talk); 2015年08月
    発表情報; Shangha Institute of Microsystem and Information Technology, Chinese Academy of Sciences, August 14, 2015.
    著者; Qixin GUO
  • Growth of (GaIn)2O3 Films and Nanostructures (Invited Talk); 2015年06月
    発表情報; 8th International Conference on Materials for Advanced Technologies, 28 June - 03 July, 2015, Suntec Singapore, O1-2, 17:00-17:30 29 June, 2015
    著者; Qixin GUO
  • 光电材料的应用和研究动态; 2015年05月
    発表情報; 上海交通大学、2015年5月29日10:00-11:40
    著者; 郭其新
  • Epitaxial growth and characterization of nitride semiconductors (Invited talk); 2015年01月
    発表情報; Shanghai University of Engineering Science, Jan. 21, 2015.
    著者; Qixin Guo
  • Epitaxial Growth and Characterization of InGaN for Multi Junction Tandem Solar Cells (Invited Talk); 2014年11月
    発表情報; 10th China SoG Silicon and PV Power Conference, Nov. 6-8, 2014, Nantong, China. Nov. 8, 14:10-14:30.
    著者; Qixin GUO
  • Heteroepitaxy growth and chatacterization of compound semiconductors (Invited Talk); 2014年11月
    発表情報; Asia Communications and Photonics Conference, November 11-14, 2014, Shanghai International Convention Center, China, AW3J.1 13:30-14:00, November 12.
    著者; Qixin GUO
  • Epitaxial Growth and Characterization of ZnTe Films (Invited Talk); 2014年10月
    発表情報; The 7th Vacuum and Surface Sciences Conference of Asia and Australia (VASSCAA-7),October 5-9,2014, National Tsing Hua University, Hsinchu, Taiwan. TF/SS-2, Oct. 9 am10:30-11:10.
    著者; Qixin GUO
  • Growth and Characterization of (GaIn)2O3 Films (Invited Talk); 2014年10月
    発表情報; The Joint International Conference of the 9th Asian Meeting on Ferroelectricity (AMF-9) and the 9th Asian Meeting on Electroceramics (AMEC-9), Oct. 26-30, 2014, Shanghai, I037-5H-A008, AM 10:15-10:45, 28 Oct. 2014.
    著者; Qixin Guo, Fabi Zhang, Katsuhiko Saito, Tooru Tanaka, and Mitsuhiro Nishio
  • Heteroepitaxial growth of II-VI compound semiconductors (Invited Talk); 2014年07月
    発表情報;  Optics Frontier—The 6th National Conference on Information Optics and Photonics and the International Workshop on Information Optics Technology, July 22-27, Changchun, China
    著者; Qixin GUO
  • Epitaxial growth of compound semiconductors for high efficiency solar cells; 2013年10月
    発表情報; Shanghai Normal University, October 9, 2013.
    著者; Qixin Guo
  • Growth and characterization of ZnTe thin films (Invited Talk); 2013年09月
    発表情報; The 8th International Conference on THIN FILM PHYSICS AND APPLICATIONS, Session 1, 15:20-15:50, September 21, Shanghai, China, September 20-23, 2013.
    著者; Qixin Guo, Hajime Akiyama, Katsuhiko Saito, Tooru Tanaka, and Mitsuhiro Nishio
  • Research activity on optoelectronic materials and devices at Saga University; 2013年09月
    発表情報; Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, September 25, 2013.
    著者; Qixin Guo
  • Current Status of Researches on THz Applications; 2013年03月
    発表情報; Shanghai Normal University, March 8, 2013
    著者; Qixin Guo
  • Heteroepitaxial growth of ZnTe layers by MOVPE (Invited Talk); 2012年12月
    発表情報; The Collaborative Conference on Crystal Growth 2012, A23, December 12, 2012, 14:00-14:25, Doubletree by Hilton Orlando at SeaWorld, Orlando, FL, USA.
    著者; Qixin Guo, Katsuhiko Saito, Tooru Tanaka, and Mitsuhiro Nishio
  • Low-temperature Epitaxial Growth of GaInN Films (Invited Talk); 2012年08月
    発表情報; The 8th International Forum on Advanced Materials Science and Technology, Fukuoka, Japan, Augest 1-4, 2012, 3A-OS01-08.
    著者; Q.X. Guo, T. Nakao, M. Arita, K. Saito, T. Tanaka and M. Nishio
  • Growth of advanced materials for THz device applications (Invited Talk); 2012年08月
    発表情報; Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, August 10, 2012.
    著者; Qixin Guo
  • Synchrotron Light Applications for Characterizing Advanced Thin Films (Invited Talk); 2012年07月
    発表情報; The 6th International Conference on Technological Advances of Thin Films & Surface Coatings, FPT 2060, 14-17 July, 2012, Singapore Management University, Singapore
    著者; Qixin Guo
  • 光電材料的応用与発展; 2012年03月
    発表情報; 上海交通大学、2012年3月8日
    著者; 郭 其新
  • Synchrotron Light Application in Optoelectronics; 2012年03月
    発表情報; Shanghai Normal University, March 9, 2012.
    著者; Qixin Guo
  • Synchrotron light applications for characterizing novel photonic materials (Invited Talk); 2011年12月
    発表情報; International Photonics Conference 2011, December 8-10, 2011, Tainan, E-SA-V6.
    著者; Qixin Guo
  • Current Status of Researches on Optoelectronics; 2011年12月
    発表情報; Shanghai Normal University, December 20, 2011.
    著者; Qixin Guo
  • Advanced Technologies in Optoelectronics; 2011年12月
    発表情報; Guilin University of Electronic Technology, December 26, 2011, Guilin, China
    著者; Qixin Guo
  • Current Status of Researches on Advanced Functional Materials; 2011年12月
    発表情報; Department of Physics, Guangxi University, Nanning,China, December 28, 2011.
    著者; Qixin Guo
  • Synchrotron light application for characterizing novel energy materials (Invited talk); 2011年11月
    発表情報; 10th International conferrence on Ecomaterials, November 21-24, 2011, Shanghai, China.
    著者; Qixin Guo
  • Synchrotron Light Applications for Characterizing Novel Functional Materials (Invited Talk); 2011年10月
    発表情報; The 1st Annual World Congress of Nano-S& T, Tract 3-16, Oct. 25, World EXPO Center, Dalian, China,
    著者; Qixin GUO
  • Synchrotron Light Applications for Characterizing Novel Functional Materials (Invited Talk); 2011年10月
    発表情報; 2011 Workshop on Advances in Functional Materials, Oct. 24, 2011, Dalian University of Technology, China.
    著者; Qixin GUO
  • STRUCTURAL PROPERTIES OF MAGNETITE FILMS GROWN BY PULSED LASER DEPOSITION (Invited Talk); 2011年07月
    発表情報; The Nineteenth Annual International Conference on COMPOSITES/NANO ENGINEERING, Shanghai, China, July 24-30, 2011, Session 2d OXIDE 1, Invited Talk, July 25, 5:00-5:20PM
    著者; Qixin Guo, Kazuki Nakamura, Katsuhiko Saito, Tooru Tanaka, Mitsuhiro Nishio, Makoto Arita, Yoshifumi Ikoma, Jian Ding, and Di Zhang
  • Low-temperature epitaxial growth of nitride semiconductor thin films (Invited Talk); 2010年09月
    発表情報; 7th International conference on Thin Film Physics and Applications, Sep. 24-27, Shanghia, China, III-1.
    著者; Qixin GUO, Katsuhiko Saito, Yaliu Ding, Tooru Tanaka, and Mitsuhiro Nishio
  • Growth of nitride thin films for multi-junction tandem solar cells (Invited Talk); 2010年06月
    発表情報; The 7th International Forum on Advanced Material Science and Technology,26-28 June 2010, The Dalian University of Technology, Dalian, A-115.
    著者; Qixin Guo,Yuta Kusunoki, Yaliu Ding, Katsuhiko Saito, Tooru Tanaka, and Mitsuhiro Nishio
  • Growth and characterization of nitride compounds for clean energy applications; 2010年01月
    発表情報; International workshop on the novel quantum detection structure for opto-electronic conversion, Janurary 5, 2010, Sanya, China.
    著者; Qixin GUO
  • Low-temperature Growth and Characterization of Thin Films for Clean Energy Applications; 2009年12月
    発表情報; TACT 2009 International Thin Films Conference, December 14 - 16, 2009, NTUT, Taipei, Taiwan, A022-I (Invited Talk)
    著者; Qixin Guo
  • Synchrotron Light Applications in Advanced Materials; 2009年12月
    発表情報; National Chung Hsing University, December 17, 2009.
    著者; Qixin Guo
  • Growth and Characterization of Advanced Materials for Clean Energy Applications; 2009年12月
    発表情報; Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Science, December 31, 2009, Suzhou, China.
    著者; Qixin GUO
  • Epitaxial Growth and Characterization of ZnTe Thin Films for Terahertz Devices (Invited talk); 2009年09月
    発表情報; The 8th Pacific Rim Conference on Lasers and Electro-Optics, August 30 - September 3rd, 2009, Shanghai, China, TuG2-1
    著者; Qixin GUO
  • Growth and characterization of ZnTe for pure-green light emitting diodes and terahertz devices (Invited Lecture); 2009年06月
    発表情報; International Conference on Advances in Functional Materials, I-9-19, June 9-12, 2009, Jiuzhaigou, China
    著者; Qixin Guo, T. Tanaka, and M. Nishio

海外の学術書、作品の翻訳・紹介

  • 光源加速器; 2010年04月
    発表情報; 放射光科学入門、上海交通大学出版社、pp.36-56, ISBN 978-7-313-06358-8
    著者; 郭其新
  • 放射光照射を用いるプロセスの研究; 2010年04月
    発表情報; 放射光科学入門、上海交通大学出版社、pp.151-159
    著者; 郭其新


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