Researcher Database

NameKASU Makoto
DepartmentDepartment of Electrical and Electronic Engineering
Job TitleProfessor Degree Obtained
E-mailkasucc.saga-u.ac.jp
Homepagehttp://www.ee.saga-u.ac.jp/pelab/index.html

Detailed Information

Research Field/Keywords for Research Field

  • Power Electronics, Electronic Devices, Semiconductor, Diamond, Widegap Semiconductor

Education

  • 1985/03, Graduated
  • 1990/03, Doctor Course, Accomplished credits for doctoral program

Employment Experience

  • 1990/04 - 2000/09
  • 2000/10 - 2011/09
  • 2001/01 - 2001/12 Part-time Lecturer
  • 2002/07 - 2003/07
  • 2003/01 - 2003/12 Part-time Lecturer
  • 2003/01 - 2003/12 Part-time Lecturer
  • 2005/04 - 2007/03
  • 2007/02 - 2007/03
  • 2007/07 - 2011/01
  • 2010/04 - 2012/03 Part-time Lecturer
  • 2011/03 - 2011/03 Part-time researcher for university or other academic organization
  • 2011/10 -  *  Professor, Electrical and Electronic Engineering, Graduate School of Science and Engineering, Saga University
  • 2013/04 - 2014/03 Saga University
  • 2013/04 - 2014/03 Saga University
  • 2015/04 - 2017/03
  • 2016/05 - 9999/99

Field of Specialization

  • Power engineering/Power conversion/Electric machinery, Electron device/Electronic equipment, Electronic materials/Electric materials, Crystal engineering, Thin film/Surface and interfacial physical properties

Awards

  • NTT物性研所長表彰業績賞 (2001/02)
  • 電子材料シンポジウム(EMS)アワード (2001/07)
  • NTT先端総研所長表彰業績賞 (2003/02)
  • NTT物性研所長表彰業績賞 (2004/02)
  • NTT先端総研所長表彰報道特別賞 (2004/02)
  • NTT先端総研所長報道特別賞 (2005/02)
  • NTT物性研所長表彰業績賞 (2005/02)
  • NTT技術誌Technical Review論文賞 (2007/02)
  • 日本結晶成長学会 論文賞 (2010/07)
  • ローデシュワルツ・オシロスコープコンテスト最優秀賞 (2013/01)
  • ローデスワルツオシロスコープコンテスト入賞 (2014/03)
  • 表面科学会フェロー (2016/05)
  • 応用物理学会フェロー (2016/09)

Research Topics and Results

Books

  • ダイヤモンドデバイスのスマートフォン・タッチパネル向けデバイスへの応用の可能性; 2013/04
    ANNOUNCEMENT INFO.; 
    AUTHOR; M. Kasu
  • ダイヤモンド半導体 2.デバイス; 2009
    ANNOUNCEMENT INFO.; 
    AUTHOR; 
  • H-terminated Diamond Field-Effect Transistors; 2009
    ANNOUNCEMENT INFO.; CVD Diamond for Electronic Devices and Sensors Eds. R. Sussmann, John Wiley & Sons, Ltd, 289-312
    AUTHOR; Makoto Kasu
  • ダイヤモンド高周波デバイス; 2008
    ANNOUNCEMENT INFO.; , 266-278
    AUTHOR; 
  • 第6節 AlN遠紫外発光ダイオードの現状と課題; 2007
    ANNOUNCEMENT INFO.; 
    AUTHOR; 
  • AlN light-emitting diodes; 2006
    ANNOUNCEMENT INFO.; Modern Wide Bandgap Semiconductors and Related Optoelectronic Devices Springer-Verlag, Berlin
    AUTHOR; Y. Taniyasu, M. Kasu, and T. Makimoto
  • 微傾斜面とエピタキシー; 2002
    ANNOUNCEMENT INFO.; , 135-153
    AUTHOR; Makoto Kasu

Original Articles

  • Investigation of the power generation of organic photovoltaic modules connected to the power grid for more than three years; 2019/04
    ANNOUNCEMENT INFO.; Jpn. J. Appl. Phys., 58, 05, 052001
    AUTHOR; R. Sato, Y. Chiba, M. Chikamatsu, Y. Yoshida, T. Taima, M. Kasu, and A. Masuda,
  • Characterization of crystalline defects in β -Ga2O3 single crystals grown by edge-defined film-fed growth and halide vapor-phase epitaxy using synchrotron X-ray topography; 2019/04
    ANNOUNCEMENT INFO.; Japanese Journal of Applied Physics, 58, 05, 055501
    AUTHOR; S. Masuya, K. Sasaki, A. Kuramata, S. Yamakoshi, O. Ueda, and M. Kasu,
  • Epitaxial lateral overgrowth alpha-GaO3 by Halide Vapor Epiaxy; 2019/02
    ANNOUNCEMENT INFO.; APL. Mater, 7, 022503
    AUTHOR; Y. Oshima, K. Kawara, T. Shinohe, T. Hitora, M. Kasu, and S. Fujita
  • Stability of diamond Si bonding interface during device fabrication process; 2019/01
    ANNOUNCEMENT INFO.; Applied Physics Express, 12, 01, 016501)
    AUTHOR; J. Liang, S. Masuya, S. –W. Kim, T. Oishi, M. Kasu, N. Shigekawa,
  • Heterointerface properties of diamond MOS structures studied using capacitance–voltage and conductance–frequency measurements; 2019/01
    ANNOUNCEMENT INFO.; Diamond and Related Materials, 91, 219–224
    AUTHOR; Niloy Chandra Saha, M. Kasu
  • Improvement of the Al2O3NO2H-diamond MOS FET by using Au gate; 2019/01
    ANNOUNCEMENT INFO.; Diamond and Related Materials, 92, 81–85
    AUTHOR; Niloy Chandra Saha, Makoto Kasu,
  • Temperature dependence measurements and performance analyses of high-efficiency interdigitated back-contact, passivated emitter and rear cell, and silicon heterojunction photovoltaic modules; 2018/08
    ANNOUNCEMENT INFO.; Japanese Journal of Applied Physics 57,08RG18 (2018)., 57, 08., 08RG18
    AUTHOR; M. Kasu, J. Abdu, S. Hara, Y. Chiba, A. Masuda,
  • Dislocations in chemical vapor deposition (111) single crystal diamond observed by synchrotron X-ray topography and their relation with etch pits; 2018/04
    ANNOUNCEMENT INFO.; Diamond and Related Materials, 90, 40-46
    AUTHOR; S. Masuya, M. Kasu,
  • Band Alignment of Al2O3 Layer Deposited NO and SO2; 2018/04
    ANNOUNCEMENT INFO.; Phys. Status Solidi, A 2018, 18, 1800237
    AUTHOR; Saha Niloy Chandra, M. Kasu
  • Reduction of dislocation densities in single crystal CVD diamond by confinement in the lateral sector; 2018/03
    ANNOUNCEMENT INFO.; Diamond and Related Materials, 83, 162-169
    AUTHOR; A. Boussadi, A. Tallaire, M. Kasu, J. Barjon, J. Achard,
  • Crystal defects observed by the etch-pit method and their effects on Schottky-barrier-diode characteristics on β-Ga2O3; 2017/09
    ANNOUNCEMENT INFO.; apanese Journal of Applied Physics, 56, 091101
    AUTHOR; M. Kasu, T. Oshima, K. Hanada, T. Moribayashi, A. Hashiguchi, T. Oishi, K. Koshi, K. Sasaki, A. Kuramata, and O. Ueda,
  • Carrier confinement observed at modulation-doped β-(AlxGa1-x)2O3/Ga2O3 heterojunction interface; 2017/05
    ANNOUNCEMENT INFO.; , 10, 03, 035701.
    AUTHOR; T. Oshima, Y. Kato, N. Kawano, T. Oishi, M. Kasu
  • Epitaxial growth of γ-(Alx Ga1-x )O3 alloy films for band-gap engineering; 2017/05
    ANNOUNCEMENT INFO.; Applied Physics Express 10, 051104 (2017)., 10, 05, 051104
    AUTHOR; T. Oshima, Y. Kato, M. Oda, T. Hitora, M. Kasu
  • Formation of stacking fault and dislocation behavior during the high temperature annealing of single-crystal HPHT diamond”; 2017/04
    ANNOUNCEMENT INFO.; Dia. Rel. Mater., 75, 155–160
    AUTHOR; S. Masuya, K. Hanada, T. Oshima, H. Sumiya, M. Kasu,
  • Electrical properties of Schottky barrier diodes fabricated on (001) β-Ga2O3 substrates with crystal defects; 2017/04
    ANNOUNCEMENT INFO.; Japanese Journal of Applied Physics, 56, 086501
    AUTHOR; T. Oshima, A. Hashiguchi, T. Moribayashi, K. Koshi, K. Sasaki, A. Kuramata, O. Ueda, T. Oishi, and M. Kasu
  • Diamond field-effect transistors for RF power electronics: Novel NO2 hole doping and low-temperature deposited Al2O3 passivation; 2017/01
    ANNOUNCEMENT INFO.; Japanese Journal of Applied Physics, 56, 1, 01AA01
    AUTHOR; Makoto Kasu
  • Diamond Schottky Barrier Diodes With NO2 Exposed Surface and RF-DC Conversion Toward High Power Rectenna; 2017/01
    ANNOUNCEMENT INFO.; IEEE ELECTRON DEVICE LETTERS, 38, 1, 87
    AUTHOR; Toshiyuki Oishi, Naoto Kawano, Satoshi Masuya, and Makoto Kasu
  • Relationship between crystal defects and leakage current in β-Ga2O3 Schottky barrier diodes; 2016/12
    ANNOUNCEMENT INFO.; Japanese Journal of Applied Physics, 55, 1202BB
    AUTHOR; M. Kasu, K. Hanada, T. Moribayashi, A. Hashiguchi, T. Oshima, T. Oishi, K. Koshi, K. Sasaki, A. Kuramata, and O. Ueda
  • Structural evaluation of defects in β-Ga2O3 single crystals grown by edge-defined film-fed growth process; 2016/12
    ANNOUNCEMENT INFO.; Japanese Journal of Applied Physics, 55, 1202BD
    AUTHOR; O. Ueda N. Ikenaga, K. Koshi, K. Iizuka, A. Kuramata, K. Hanada, T. Moribayashi, S. Yamakoshi, and M. Kasu
  • Origins of etch-pits in (010) β-Ga2O3 single crystals; 2016/12
    ANNOUNCEMENT INFO.; Japanese Journal of Applied Physics, 55, 1202BG
    AUTHOR; K Hanada, T. Moribayashi, K. Koshi, K. Sasaki, A. Kuramata, O. Ueda, and M. Kasu,
  • Diamond epitaxy: basics and applications; 2016/08
    ANNOUNCEMENT INFO.; Progress in Crystal Growth and Characterization of Materials, 62, 317–328
    AUTHOR; Makoto Kasu
  • “Estimation method of solar cell temperature using meteorological data in mega solar power plant; 2016/08
    ANNOUNCEMENT INFO.; IEEE Journal of Photovoltaics, 6, 1255
    AUTHOR; S. Hara, M. Kasu, and N. Matsui,
  • Formation of indium–tin oxide ohmic contacts for β-Ga2O3; 2016/08
    ANNOUNCEMENT INFO.; Japanese Journal of Applied Physics, 55, 1202B7
    AUTHOR; Takayoshi Oshima, Ryo Wakabayashi, Mai Hattori, Akihiro Hashiguchi, Naoto Kawano, Kohei Sasaki, Takekazu Masui, Akito Kuramata, Shigenobu Yamakoshi, Kohei Yoshimatsu, Akira Ohtomo, Toshiyuki Oishi and Makoto Kasu
  • Observation of nanometer-sized crystalline grooves in as-grown β-Ga2O3 single crystals; 2016/04
    ANNOUNCEMENT INFO.; Japanese Journal of Applied Physics, 55, 030303
    AUTHOR; K. Hanada, T. Moribayashi, T. Uematsu, S. Masuya, K. Koshi, K. Sasaki, A. Kuramata, O. Ueda, and M. Kasu
  • Study on conduction mechanism in highly doped -Ga2O3 (-201) single crystals grown by edge-defined film-fed growth method and their Schottky barrier diodes; 2016/04
    ANNOUNCEMENT INFO.; Japanese Journal of Applied Physics, 55, 3, 030305
    AUTHOR; T. Oishi, K. Harada, Y. Koga, and M. Kasu
  • “Study on capacitance–voltage characteristics of diamond field-effect transistors with NO2 hole doping and Al2O3 gate insulator layer; 2016/04
    ANNOUNCEMENT INFO.; Japanese Journal of Applied Physics, 55, 041301
    AUTHOR; M. Kasu, K. Hirama, K. Harada, and T. Oishi,
  • Study on capacitance–voltage characteristics of diamond field-effect transistors with NO2 hole doping and Al2O3 gate insulator layer; 2016/02
    ANNOUNCEMENT INFO.; Japanese Journal of Applied Physics, 55, 4, 041301
    AUTHOR; M. Kasu, K. Hirama, K. Harada, and T. Oishi
  • Determination of the type of stacking faults in single-crystal high-purity diamond with a low dislocation density of < 50 cm−2 by synchrotron X-ray topography; 2016/02
    ANNOUNCEMENT INFO.; Japanese Journal of Applied Physics, 55, 4, 040303
    AUTHOR; S. Masuya, K. Hanada, T. Uematsu, T. Moribayashi, H. Sumiya, and M. Kasu,
  • High-mobility β-Ga2O3(-201) single crystals grown by edge-defined film-fed growth method and their Schottky barrier diodes with Ni contact; 2015/01
    ANNOUNCEMENT INFO.; Applied Physics Express, 8, 3, 031101
    AUTHOR; T. Oishi, Y. Koga, K. Harada, M. Kasu
  • Synchrotron X-ray topography of dislocations in high-pressure high-temperature-grown single-crystal diamond with low dislocation density; 2014/11
    ANNOUNCEMENT INFO.; Applied Physics Express, 7, 12, 125501-125501
    AUTHOR; M. Kasu, R. Murakami, S. Masuya, K. Harada, and H. Sumiya
  • Electronic states of NO2-exposed H-terminated diamond/Al2O3 heterointerface studied by synchrotron radiation photoemission and X-ray absorption spectroscop; 2014/04
    ANNOUNCEMENT INFO.; APPLIED PHYSICS LETTERS, 104, 7, 072101-072101
    AUTHOR; K. Takahashi, M. Imamura, K. Hirama, and M. Kasu
  • Maximum hole concentration for Hydrogen-terminated diamond surfaces with various surface orientations obtained by exposure to highly concentrated NO 2; 2013/10
    ANNOUNCEMENT INFO.; Diamond and Related Materials, 31, 47-49
    AUTHOR; 佐藤、嘉数
  • Carrier Gas Dependent Evaporation Energy of GaN Estimated from Spiral Growth Rates in Selective-Area Metalorganic Vapor Phase Epitaxy; 2013/09
    ANNOUNCEMENT INFO.; Appl. Phys. Express, 6, 105501
    AUTHOR; T. Akasaka, Y. Kobayashi, M. Kasu, H. Yamamoto,
  • Mechanism of hole doping into hydrogen terminated diamond by the adsorption of inorganic molecule; 2013
    ANNOUNCEMENT INFO.; Surface Science, 609, 203-206
    AUTHOR; Y. Takagi, K. Shiraishi, Makoto Kasu, and H. Sato,
  • Epitaxial growth of AlGaN/GaN high-electron mobility transistor structure on diamond (111) surface; 2012/10
    ANNOUNCEMENT INFO.; , 51, 090114
    AUTHOR; 平間、谷保、嘉数
  • AlN/GaN超格子を使ったAlGaN遠紫外発光ダイオードの高輝度化の検討; 2012/10
    ANNOUNCEMENT INFO.; Japanese Journal of Applied Physics, 51, 02BJ11
    AUTHOR; K. Kamiya, Y. Ebihara, M. Kasu, K. Shiraishi
  • Thermal stabilization of hole channel on H-terminated diamond surface by using atomic-layer-deposited AL 2O 3 overlayer and its electric properties; 2012/10
    ANNOUNCEMENT INFO.; Applied Physics Express, 5, 2, 025701
    AUTHOR; 嘉数、佐藤、平間
  • Polarization property of deep-ultraviolet light emission from C-plane AlN/GaN short-period superlattices; 2012/10
    ANNOUNCEMENT INFO.; Applied Physics Letters,, 99, 25, 251112
    AUTHOR; Y. Taniyasu, M. Kasu
  • “Thermal Stabilization of Hole Channel on H-Terminated Diamond Surface by Using Atomic-Layer-Deposited Al2O3 Overlayer and its Electric Properties”; 2012
    ANNOUNCEMENT INFO.; Appl. Phys. Express, 5, 025701-025701.
    AUTHOR; M. Kasu, H. Sato, and K. Hirama
  • Growth and Device Properties of AlGaN/GaN High-Electron Mobility Transistors on a Diamond Substrate; 2012
    ANNOUNCEMENT INFO.; Japanese Journal of Applied Physics, 51, 01AG09- 01AG09
    AUTHOR; K. Hirama, M. Kasu, and Y. Taniyasu,
  • RF High-Power Operation of AlGaN/GaN HEMTs Epitaxially Grown on Diamond; 2012
    ANNOUNCEMENT INFO.; IEEE Electron Device Lett., 33, 513-515
    AUTHOR; K. Hirama, M. Kasu, and Yoshitaka Taniyasu
  • Electronic properties of H-terminated diamond during NO2 and O3 adsorption and desorption; 2012
    ANNOUNCEMENT INFO.; Diamond and Related Materials, 24, 99-103
    AUTHOR; H. Sato and M. Kasu
  • Thermally Stable Operation of H-Terminated Diamond FETs by NO2 Adsorption and Al2O3 Passivation; 2012
    ANNOUNCEMENT INFO.; IEEE Electron Device Lett., 33, 1111-1113
    AUTHOR; K. Hirama, H. Sato, Y. Harada, and H. Yamamoto, and M. Kasu
  • Diamond Field-Effect Transistors with 1.3A/mm Drain Current Density by Al2O3 Passivation Layer; 2012
    ANNOUNCEMENT INFO.; Jpn. J. Appl. Phys., 51, 090112-090112
    AUTHOR; K. Hirama, H. Sato, Y. Harada, H. Yamamoto, and M. Kasu,
  • Electroluminescence and capacitance-voltage characteristics of singlecrystal n-type AlN (0001) /p-type diamond (111) heterojunction diodes; 2011
    ANNOUNCEMENT INFO.; Appl. Phys. Lett., 98, 011908
    AUTHOR; K. Hirama, Y. Taniyasu, M. Kasu
  • “Structural design of AlN/GaN superlattices for deep-ultraviolet light-emitting diodes with high emission efficiency”,; 2011
    ANNOUNCEMENT INFO.; Appl. Phys. Lett., 2011, 151108-151108
    AUTHOR; K. Kamiya, Y. Ebihara, K. Shiraishi, and M. Kasu,
  • Coherent coupling of a superconducting flux qubit to an electron spin ensemble in diamond; 2011
    ANNOUNCEMENT INFO.; Nature, 478, 221-224
    AUTHOR; Xiaobo Zhu, Shiro Saito, Alexander Kemp, Kosuke Kakuyanagi, Shin-ichi Karimoto, Hayato Nakano, William J. Munro, Yasuhiro Tokura, Mark S. Everitt Kae Nemoto, Makoto Kasu, Norikazu Mizuochi and Kouichi Semba,
  • Hexagonal AlN(0001) heteroepitaxial growth on cubic diamond (001); 2010
    ANNOUNCEMENT INFO.; Jpn. J. Appl. Phys., 49, 04DH01
    AUTHOR; K. Hirama, Y. Taniyasu, M. Kasu
  • High temperature operation of boron-implanted diamond field-effect transistors; 2010
    ANNOUNCEMENT INFO.; Jpn. J. Appl. Phys., 49, 04DF16
    AUTHOR; K. Ueda and M. Kasu
  • Electronic and surface properties of H-terminated diamond surface affected by NO2 gas; 2010
    ANNOUNCEMENT INFO.; Diamond and Related Materials, 19, 889-893
    AUTHOR; M. Kubovic, M. Kasu, H. Kageshima, F. Maeda,
  • Supersaturation in nucleus and spiral growth in metal organic vapor phase epitaxy; 2010
    ANNOUNCEMENT INFO.; Appl. Phys. Lett, 94, 141902
    AUTHOR; T. Akasaka, Y. Kobayashi, and M. Kasu
  • Sorption properties of NO2 gas and its strong influence on hole concentration of H-terminated diamond surfaces; 2010
    ANNOUNCEMENT INFO.; Appl. Phys. Lett., 96, 052101
    AUTHOR; M. Kubovic, M. Kasu, H. Kageshima
  • Heterostructure growth of a single-crystal hexagonal AlN (0001) layer on cubic diamond (111) surface; 2010
    ANNOUNCEMENT INFO.; J. Appl. Phys., 108, 013528
    AUTHOR; K. Hirama, Y. Taniyasu, M. Kasu
  • Surface 210-nm light emission from AlN p-n junction light-emitting diode by A-plane growth orientation; 2010
    ANNOUNCEMENT INFO.; Appl. Phys. Lett., 96, 221110
    AUTHOR; Y. Taniyasu and M. Kasu
  • Nucleus and spriral growth mechanisms of GaN studied by using selective-area metalorganic vapor phase epitaxy; 2010
    ANNOUNCEMENT INFO.; Appl. Phys. Express, 3, 075602
    AUTHOR; T. Akasaka, Y. Kobayashi, M. Kasu
  • Enhancement and stabilization of hole concentration of hydrogen-terminated diamond surface using ozone adsorbates; 2010
    ANNOUNCEMENT INFO.; Jpn. J. Appl. Phys., 49, 110208
    AUTHOR; M. Kubovic and M. Kasu
  • Arsenic-doped n-type diamond grown by microwave-assisted plasma chemical vapor deposition; 2010
    ANNOUNCEMENT INFO.; Jpn. J. Appl. Phys., 49, 110209
    AUTHOR; M. Kasu and M. Kubovic
  • Beryllium-doped single-crystal diamond grown by microwave plasma CVD; 2009
    ANNOUNCEMENT INFO.; Diamond and Related Materials, 18, 121-123
    AUTHOR; K. Ueda and M. Kasu
  • MOVPE growth of hexagonal aluminium nitride on cubic diamond; 2009
    ANNOUNCEMENT INFO.; J. Crystal Growth, 311, 2825-2830
    AUTHOR; Y. Taniyasu and M. Kasu
  • Low-temperature characteristics of the current gain of GaN/InGaN double heterojunction bipolar transistors; 2009
    ANNOUNCEMENT INFO.; J. Crystal Growth, 311, 3000-3002
    AUTHOR; A. Nishikawa, K. Kumakura, M. Kasu, and T. Makimoto
  • Molecular beam epitaxial growth of hexagonal boron nitride on Ni (111) substrate; 2009
    ANNOUNCEMENT INFO.; J. Crystal Growth, 311, 3054-3057
    AUTHOR; C. L. Tsai, Y. Kobayashi, T. Akasaka, and M. Kasu
  • Structural and electrical properties of hydrogen-terminated diamond field-effect transistor; 2009
    ANNOUNCEMENT INFO.; Diamond and Related Materials, 18, 796-799
    AUTHOR; M. Kubovic, M. Kasu, Y. Yamauchi, K. Ueda, and H. Kageshima
  • Identification of etch-pit crystallographic faces induced on diamond surface by H2/O2 etching plasma treatment; 2009
    ANNOUNCEMENT INFO.; Phys. Status Solidi A, 206, 1949-1954
    AUTHOR; J. Achard, F. Silva, O. Brinza, X. Bonnin, V. Lille., R. Issaoui, M. Kasu, A. Gicquel,
  • Improvement of hydrogen-terminated diamond FETs in nitrogen dioxide atmosphere; 2009
    ANNOUNCEMENT INFO.; Appl. Phys. Express, 2, 086502
    AUTHOR; M. Kubovic and M. Kasu
  • Origin of Schottky barrier modification by hydrogen on diamond; 2009
    ANNOUNCEMENT INFO.; Jpn. J. Appl. Phys., 48, 111602
    AUTHOR; H. Kageshima and M. Kasu
  • Photoluminescence of highly excited AlN: biexcitons and exciton-exciton scattering; 2009
    ANNOUNCEMENT INFO.; Appl. Phys. Lett., 95, 031903
    AUTHOR; R. A. R. Leute, M. Feneberg, R. Sauer, K. Thonke, S. B. Thapa, F. Scholz, Y. Taniyasu, and M. Kasu
  • Step-free GaN hexagons grown by selective-area metalorganic vapor phase epitaxy; 2009
    ANNOUNCEMENT INFO.; Appl. Phys. Express, 2, 091002
    AUTHOR; T. Akasaka, Y. Kobayashi, M. Kasu
  • High-temperature (300 �C) operation of npn -type GaN/InGaN double heterojunction bipolar transistors; 2008/07
    ANNOUNCEMENT INFO.; Physica Status Solidi (c), 5, 9, 2957-2959
    AUTHOR; A. Nishikawa, K. Kumakura, M. Kasu and T. Makimoto
  • Diamond RF FETs and other approaches to electronics; 2008/07
    ANNOUNCEMENT INFO.; Physica Status Solidi (c), 5, 9, 3165-3168
    AUTHOR; M. Kasu, K. Ueda, H. Kageshima and Y. Taniyasu
  • Diamond FETs on boron-implanted and high-pressure and high-temperature annealed homoepitaxial diamond; 2008/07
    ANNOUNCEMENT INFO.; Physica Status Solidi (c), 5, 9, 3175-3177
    AUTHOR; Kenji Ueda, Yoshiharu Yamauchi and Makoto Kasu
  • Anisotropic in-plane strains in nonpolar AlN and AlGaN (11-20) films grown on SiC (11-20) substrates; 2008
    ANNOUNCEMENT INFO.; Applied Physics Letters, 93, 161908
    AUTHOR; T. Akasaka, Y. Kobayashi, and M. Kasu
  • RF equivalent-circuit analysis of p-type diamond field-effect transistors with hydrogen surface termination; 2008
    ANNOUNCEMENT INFO.; IEICE Transactions on Electronics, E91C, 1042-1049
    AUTHOR; M. Kasu, K. Ueda, H. Kageshima, and Y. Yamauchi
  • Origin of growth defects in CVD diamond epitaxial films; 2008
    ANNOUNCEMENT INFO.; Diamond and Related Materials, 17, 60-65
    AUTHOR; A. Tallaire, M. Kasu, K. Ueda, and T. Makimoto
  • High-pressure and high-temperature annealing effects of boron-implanted diamond; 2008
    ANNOUNCEMENT INFO.; Diamond and Related Materials, 17, 502-505
    AUTHOR; K. Ueda and M. Kasu
  • Thick diamond layers angled by polishing to reveal defect and impurity depth profiles; 2008
    ANNOUNCEMENT INFO.; Diamond and Related Materials, 17, 506-510
    AUTHOR; A. Tallaire, M. Kasu, and K. Ueda
  • Gate interfacial layer in hydrogen-terminated diamond field-effect transistors; 2008
    ANNOUNCEMENT INFO.; Diamond and Related Materials, 17, 741-744
    AUTHOR; M. Kasu, K. Ueda, and Y. Yamauchi
  • High-pressure and high-temperature annealing of diamond ion-implanted with various elements; 2008
    ANNOUNCEMENT INFO.; Diamond and Related Materials, 17, 1269-1272
    AUTHOR; K. Ueda and M. Kasu
  • Aluminum nitride deep-ultraviolet light-emitting p-n junction diodes; 2008
    ANNOUNCEMENT INFO.; Diamond and Related Materials, 17, 1273-1277
    AUTHOR; Y. Taniyasu and M. Kasu
  • High-temperature characteristics of AlxGa1-xN-based vertical conducting diodes; 2008
    ANNOUNCEMENT INFO.; Japanese Journal of Applied Physics, 47, 2838-2840
    AUTHOR; A. Nishikawa, K. Kumakura, M. Kasu, and T. Makimoto
  • Gate capacitance-voltage characteristics of submicron-long-gate diamond field-effect transistors with hydrogen surface termination; 2007
    ANNOUNCEMENT INFO.; Applied Physics Letters, 90, 043509
    AUTHOR; M. Kasu, K. Ueda, Y. Yamauchi, and T. Makimoto
  • High-pressure and high-temperature annealing as an activation method for ion-implanted dopants in diamond; 2007
    ANNOUNCEMENT INFO.; Applied Physics Letters, 90, 122102
    AUTHOR; K. Ueda, M. Kasu, and T. Makimoto
  • Radiation and polarization properties of free-exciton emission from AlN (0001) surface; 2007
    ANNOUNCEMENT INFO.; Applied Physics Letters, 90, 261911
    AUTHOR; Y. Taniyasu, M. Kasu, and T. Makimoto
  • Threading dislocations in heteroepitaxial AlN layer grown by MOVPE on SiC (0001) substrate; 2007
    ANNOUNCEMENT INFO.; J. Crystal Growth, 298, 310-315
    AUTHOR; Y. Taniyasu, M. Kasu, and T. Makimoto
  • Cathodoluminescence, photoluminescence, and reflectance study of an aluminum nitride layer grown on silicon carbide substrate; 2007
    ANNOUNCEMENT INFO.; J. Applied Physics, 101, 023511
    AUTHOR; G. M. Prinz, A. Ladenburger, M. Schirra, M. Feneberg, K. Thonke, R. Sauer, Y. Taniyasu, M. Kasu, and T. Makimoto
  • Diamond-based RF power transistors: Fundamentals and applications; 2007
    ANNOUNCEMENT INFO.; Diamond and Related Materials, 16, 1010-1015
    AUTHOR; M. Kasu, K. Ueda, Y. Yamauchi, A. Tallaire, and T. Makimoto
  • High RF output power for H-terminated diamond FETs; 2006
    ANNOUNCEMENT INFO.; Diamond and Related Materials, 15, 783-786
    AUTHOR; M. Kasu, K. Ueda, H. Ye, Y. Yamauchi, S. Sasaki, and T. Makimoto
  • Temperature dependent DC and RF performance of diamond MESFET; 2006
    ANNOUNCEMENT INFO.; Diamond and Related Materials, 15, 787-791
    AUTHOR; H. Ye, M. Kasu, K. Ueda, Y. Yamauchi, N. Maeda, S. Sasaki, and T. Makimoto
  • High-pressure and high-temperature annealing effect of CVD homoepitaxial diamond films; 2006
    ANNOUNCEMENT INFO.; Diamond and Related Materials, 15, 1789-1791
    AUTHOR; K. Ueda, M. Kasu, A. Tallaire, Y. Yamauchi, and T. Makimoto
  • Characterization of high-quality poly-crystalline diamond and its high FET performance; 2006
    ANNOUNCEMENT INFO.; Diamond and Related Materials, 15, 1954-1957
    AUTHOR; K. Ueda, M. Kasu, Y. Yamauchi, T. Makimoto, M. Schwitters, D. J. Twitchen, G. A. Scarsbrook, and S. E. Coe
  • Diamond FET using high-quality polycrystalline diamond with fT of 45 GHz and fmax of 120 GHz; 2006
    ANNOUNCEMENT INFO.; IEEE Electron Device Letters, 27, 570-572
    AUTHOR; K. Ueda, M. Kasu, Y. Yamauchi, T. Makimoto, M. Schwitters, D. J. Twitchen, G. A. Scarsbrook, and S. E. Coe
  • Increased electron mobility in n-type Si-doped AlN by reducing dislocation density; 2006
    ANNOUNCEMENT INFO.; Applied Physics Letters, 89, 182112
    AUTHOR; Y. Taniyasu, M. Kasu, and T. Makimoto
  • An aluminium nitride light-emitting diode with a wavelength of 210 nanometres; 2006
    ANNOUNCEMENT INFO.; Nature, 441, 325-328
    AUTHOR; Y. Taniyasu, M. Kasu, and T. Makimoto
  • Influence of lattice constants of GaN and InGaN on Npn-type GaN/InGaN heterojunction bipolar transistors; 2006
    ANNOUNCEMENT INFO.; Japanese Journal of Applied Physics, 45, 3395-3397
    AUTHOR; T. Makimoto, T. Kido, K. Kumakura, Y. Taniyasu, M. Kasu, and N. Matsumoto
  • Strained thick p-InGaN layers for GaN/InGaN heterojunction bipolar transistors on sapphire substrates; 2005
    ANNOUNCEMENT INFO.; Japanese Journal of Applied Physics, 44, 2722-2725
    AUTHOR; T. Makimoto, Y. Yamauchi, T. Kido, K. Kumakura, Y. Taniyasu, M. Kasu, and N. Matsumoto,
  • 2 W/mm output power density at 1 GHz for diamond FETs; 2005
    ANNOUNCEMENT INFO.; Electronics Letters, 41, 1249-1250
    AUTHOR; M. Kasu, K. Ueda, H. Ye, Y. Yamauchi, S. Sasaki, and T. Makimoto,
  • Field emission properties of heavily Si-doped AlN in triode-type display structure; 2004
    ANNOUNCEMENT INFO.; Appl. Phys. Lett., 84, 2115-2117
    AUTHOR; Y. Taniyasu, M. Kasu, and T. Makimoto
  • Electrical conduction properties of n-type Si-doped AlN with high electron mobility ( > 100 cm2 V-1 s-1); 2004
    ANNOUNCEMENT INFO.; Appl. Phys. Lett., 85, 4672-4674
    AUTHOR; Y. Taniyasu, M. Kasu, and T. Makimoto
  • Influence of epitaxy on the surface conduction of diamond film; 2004
    ANNOUNCEMENT INFO.; Diamond and Related Materials, 13, 226-232
    AUTHOR; M. Kasu, M. Kubovic, A. Aleksov, N. Teofilov, Y. Taniyasu, R. Sauer, E. Kohn, T. Makimoto, and N. Kobayashi
  • Microwave performance evaluation of diamond surface channel FETs; 2004
    ANNOUNCEMENT INFO.; Microwave performance evaluation of diamond surface channel FETs, 13, 802-807
    AUTHOR; M. Kubovic, M. Kasu, I. Kallfass, M. Neuburger, A. Aleksov, G. Koley, M. G. Spencer, and E. Kohn
  • Properties of (111) diamond homoepitaxial layer and its application to field-effect transistor; 2004
    ANNOUNCEMENT INFO.; Japanese Journal of Applied Physics, 43, L975-L977
    AUTHOR; M. Kasu, M. Kubovic, A. Aleksov, N. Teofilov, R. Sauer, E. Kohn, and T. Makimoto
  • High electron concentrations in Si-doped AlN/AlGaN superlattices with high average Al content of 80%; 2003
    ANNOUNCEMENT INFO.; Phys. Stat. Sol. (a), 200, 40-43
    AUTHOR; Y. Taniyasu, M. Kasu, K. Kumakura, T. Makimoto, and N. Kobayashi
  • Triode-type basic display structure using Si-doped AlN field emitters; 2003
    ANNOUNCEMENT INFO.; Phys. Stat. Sol. (a), 200, 199-201
    AUTHOR; Y. Taniyasu, M. Kasu, T. Makimoto, and N. Kobayashi
  • Formation of stacking faults containing microtwins in (111) chemical-vapor-deposited diamond homoepitaxial layers; 2003
    ANNOUNCEMENT INFO.; Appl. Phys. Lett., 83, 3465-3467
    AUTHOR; M. Kasu, T. Makimoto, W. Ebert, and E. Kohn
  • High mobility and high crystalline-quality chemical-vapor-deposition grown homoepitaxial diamond; 2003
    ANNOUNCEMENT INFO.; Diamond and Related Materials, 12, 413-417
    AUTHOR; M. Kasu and N. Kobayashi
  • Reduction of threading dislocations in crack-free AlGaN by using multiple thin SixAl1-xN interlayers; 2003
    ANNOUNCEMENT INFO.; Appl. Phys. Lett., 83, 4140-4142
    AUTHOR; T. Akasaka, T. Nishida, Y. Taniyasu, M. Kasu, and T. Makimoto
  • Intentional control of n-type conduction for Si-deoped AlN and AlxGa1-xN (0.42ANNOUNCEMENT INFO.; Appl. Phys. Lett., 81, 1255-1257
    AUTHOR; Y. Taniyasu, M. Kasu, and N. Kobayashi
  • Intentional control of n-type conduction for Si-doped AlN and AlxGa1-xN with high Al content; 2002
    ANNOUNCEMENT INFO.; Physica Status Solidi (B), 234, 845-849
    AUTHOR; Y. Taniyasu, M. Kasu, and N. Kobayashi
  • High hole mobility (1300cm2/Vs) at room temperature in hydrogen-terminated (001) diamond; 2002
    ANNOUNCEMENT INFO.; Appl. Phys. Lett., 80, 3961-3963
    AUTHOR; M. Kasu and N. Kobayashi
  • Spontaneous ridge-structure formation and large field emission of heavily Si-doped AlN; 2001
    ANNOUNCEMENT INFO.; Appl. Phys. Lett., 78, 1835-1837
    AUTHOR; M. Kasu and N. Kobayashi
  • Field emission characteristics and large current density of heavily Si-doped AlN and AlxGa1-xN (0.38ANNOUNCEMENT INFO.; Appl. Phys. Lett., 79, 3642-3644
    AUTHOR; M. Kasu and N. Kobayashi
  • Lattice parameters of wurtzite Al1-xSixN ternary alloy; 2001
    ANNOUNCEMENT INFO.; Appl. Phys. Lett., 79, 4351-4353
    AUTHOR; Y. Taniyasu, M. Kasu, and N. Kobayashi
  • Formation of solid solution of Al1-xSixN (0ANNOUNCEMENT INFO.; Jpn. J. Appl. Phys. Lett., 40, L1048-L1050
    AUTHOR; M. Kasu, Y. Taniyasu, and N. Kobayashi
  • Spontaneous ridge formation and its effect on field emission of heavily Si-doped AlN; 2001
    ANNOUNCEMENT INFO.; Physica Status Solidi (a), 188, 779-782
    AUTHOR; M. Kasu and N. Kobayashi
  • Large and stable field emission current from heavily Si-doped AlN grown by metalorganic vapor phase epitaxy; 2000
    ANNOUNCEMENT INFO.; Appl. Phys. Lett., 76, 2910-2912
    AUTHOR; M. Kasu and N. Kobayashi
  • Large electron field emission from high-quality heavily Si-doped AlN grown by MOVPE; 2000
    ANNOUNCEMENT INFO.; J. Crystal Growth, 221, 739-742
    AUTHOR; M. Kasu and N. Kobayashi
  • Nitrogen radical adsorption on InAs (001) surface studied by scanning tunneling microscopy and x-ray photoelectronic spectroscopy; 1998
    ANNOUNCEMENT INFO.; Appl. Phys. Lett., 73, 3754-3756
    AUTHOR; M. Kasu, N. Kobayashi, H. Tanaka, and O. Mikami
  • Selectivity mechanism of all-UHV STM-based selective area growth; 1998
    ANNOUNCEMENT INFO.; Appl. Surf. Sci., 130, 452-456
    AUTHOR; M. Kasu, T. Makimoto, and N. Kobayashi
  • In-situ STM observation of GaAs surfaces after nitridation; 1997
    ANNOUNCEMENT INFO.; Jpn. J. Appl. Phys., 36, 1733-1735
    AUTHOR; T. Makimoto, M. Kasu, J. L. Benchmol, and N. Kobayashi
  • Nanoscale patterning and selective growth of GaAs surfaces by ultra-high vacuum scanning tunneling microscopy; 1997
    ANNOUNCEMENT INFO.; Jpn. J. Appl. Phys., 36, 3821-3826
    AUTHOR; M. Kasu, T. Makimoto, and N. Kobayashi
  • Selective-area GaAs growth using nitrogen passivation and scanning tunneling microscopy modification in a nanometer scale; 1997
    ANNOUNCEMENT INFO.; Appl. Phys. Lett., 70, 1161-1163
    AUTHOR; M. Kasu, T. Makimoto, and N. Kobayashi
  • Surface diffusion kinetics of GaAs and AlAs metalorganic chemical vapor epitaxy; 1997
    ANNOUNCEMENT INFO.; J. Crystal Growth, 170, 246-250
    AUTHOR; M. Kasu and N. Kobayashi
  • Nanometer-scale selective area growth on nitrogen-passivated surface using STM and MOMBE; 1997
    ANNOUNCEMENT INFO.; J. Crystal Growth, 173, 589-591
    AUTHOR; M. Kasu, T. Makimoto, and N. Kobayashi
  • Surface kinetics of metalorganic chemical vapor epitaxy -surface diffusion, nucleus formation, sticking at steps-; 1997
    ANNOUNCEMENT INFO.; J. Crystal Growth, 174, 513-521
    AUTHOR; M. Kasu and N. Kobayashi
  • Anisotropic surface morphology of GaAs (001) surfaces passivated with nitrogen radicals; 1996
    ANNOUNCEMENT INFO.; Appl. Phys. Lett., 68, 955-957
    AUTHOR; M. Kasu and N. Kobayashi
  • Scanning tunneling microscopy modification of nitrogen-passivated GaAs (001) surfaces on a nanometer scale; 1996
    ANNOUNCEMENT INFO.; Appl. Phys. Lett., 68, 1811-1813
    AUTHOR; M. Kasu, T. Makimoto, and N. Kobayashi
  • Surface diffusion of AlAs on GaAs in metalorganic chemical vapor-phase epitaxy studied by high-vacuum scanning tunneling microscopy; 1995
    ANNOUNCEMENT INFO.; J. Appl. Phys., 78, 3026-3035
    AUTHOR; M. Kasu and N. Kobayashi
  • Surface diffusion of AlAs on GaAs in metalorganic chemical vapor-phase epitaxy studied by high-vacuum scanning tunneling microscopy; 1995
    ANNOUNCEMENT INFO.; Appl. Phys. Lett., 67, 2842-2844
    AUTHOR; M. Kasu and N. Kobayashi
  • Scanning tunneling microscopy study of GaAs step structures on vicinal substrate grown by metalorganic chemical vapor deposition; 1994
    ANNOUNCEMENT INFO.; Jpn. J. Appl. Phys., 33, 712-715
    AUTHOR; M. Kasu and N. Kobayashi
  • Observation of GaAs (001) surface at high temperatures by scanning tunneling microscopy; 1993
    ANNOUNCEMENT INFO.; J. Crystal Growth, 127, 1064-1067
    AUTHOR; H. Yamaguchi, M. Kasu, T. Sueyoshi, T. Sato, and M. Iwatsuki
  • Equilibrium multiatomic step structure of GaAs (001) vicinal surfaces grown by metalorganic chemical vapor deposition; 1993
    ANNOUNCEMENT INFO.; Appl. Phys. Lett., 62, 1262-1264
    AUTHOR; M. Kasu and N. Kobayashi
  • Multi-atomic steps on metalorganic chemical vapor deposition-grown GaAs vicinal surfaces studied by atomic force microscopy; 1992
    ANNOUNCEMENT INFO.; Jpn. J. Appl. Phys., 31, L864-L866
    AUTHOR; M. Kasu and T. Fukui
  • Polarized photoluminescence of fractional layer superlattices; 1992
    ANNOUNCEMENT INFO.; Surface Science, 267, 300-303
    AUTHOR; M. Kasu, H. Ando, H. Saito, and T. Fukui
  • Fractional layer superlattices grown by MOCVD and their device application; 1992
    ANNOUNCEMENT INFO.; J. Crystal Growth, 124, 493-496
    AUTHOR; T. Fukui, K. Tsubaki, H. Saito, M. Kasu, and T. Honda
  • Anisotropy in photoluminescence and absorption spectra of fractional layer superlattices; 1991
    ANNOUNCEMENT INFO.; Appl. Phys. Lett., 59, 301-303
    AUTHOR; M. Kasu, H. Ando, H. Saito, and T. Fukui
  • Photoluminescence lifetime of AlAs/GaAs disordered superlattices; 1991
    ANNOUNCEMENT INFO.; Appl. Phys. Lett., 59, 800-802
    AUTHOR; M. Kasu, T. Yamamoto, S. Noda, and A. Sasaki
  • DX centers in AlxGal-xAs bulk alloy, AlAs/GaAs ordered and disordered superlattices; 1991
    ANNOUNCEMENT INFO.; J. Electron. Materials, 20, 691-693
    AUTHOR; M. Kasu, R. Rao, S. Noda, and A. Sasaski
  • Step-density dependence of growth rate on vicinal surface of MOCVD; 1991
    ANNOUNCEMENT INFO.; J. Crystal Growth, 115, 406-410
    AUTHOR; M. Kasu, H. Saito, and T. Fukui
  • Photoluminescent properties and optical absorption of AlAs/GaAs disordered superlattices; 1990
    ANNOUNCEMENT INFO.; J. Appl. Phys., 68, 5318-5323
    AUTHOR; T. Yamamoto, M. Kasu, S. Noda, and A. Sasaki
  • Optical properties of disordered superlattices; 1990
    ANNOUNCEMENT INFO.; J. Electron. Materials, 19, 11-12
    AUTHOR; A. Sasaki, M. Kasu, and S. Noda
  • Photoluminescent properties of AlAs/AlxGa1-xAs (x=0.5) disordered superlattices; 1990
    ANNOUNCEMENT INFO.; Jpn. J. Appl. Phys., 29, L1055-L1058
    AUTHOR; M. Kasu, T. Yamamoto, S. Noda, and A. Sasaki
  • Electroluminescence of AlAs/GaAs disordered superlattices; 1990
    ANNOUNCEMENT INFO.; Jpn. J. Appl. Phys., 29, L1588-L1590
    AUTHOR; M. Kasu, T. Yamamoto, S. Noda, and A. Sasaki
  • Absorption spectra and photoluminescent processes of AlAs/GaAs disordered superlattices; 1990
    ANNOUNCEMENT INFO.; Jpn. J. Appl. Phys., 29, 828-834
    AUTHOR; M. Kasu, T. Yamamoto, S. Noda, and A. Sasaki
  • Proposal and experimental results of disordered crystalline semiconductors; 1989
    ANNOUNCEMENT INFO.; Jpn. J. Appl. Phys., 28, L1249-L1251
    AUTHOR; A. Sasaki, M. Kasu, T. Yamamoto, and S. Noda,

Material, Commentary, Editorials, Research Report, A Comprehensive Journal Articles

  • 資源問題と表面科学; 2014/12
    ANNOUNCEMENT INFO.; , 35, 12
    AUTHOR; Makoto Kasu
  • シンクロトロン光・X線トポグラフィーを用いたダイヤモンド単結晶の転位の同定; 2014/04
    ANNOUNCEMENT INFO.; , 30, 4, 113-116
    AUTHOR; M. Kasu, R. Murakami, S. Masuya
  • ダイヤモンド結晶成長:パワーデバイス応用への現状と課題; 2012/12
    ANNOUNCEMENT INFO.; , 39, 4, 6
    AUTHOR; 
  • NO2及びO3吸着による水素終端ダイヤモンド表面での正孔生成; 2012/10
    ANNOUNCEMENT INFO.; , 33, 10, 575
    AUTHOR; 
  • CVD 単結晶ダイヤモンドの異常成長粒子、転位、不純物ドーピングの機構; 2012/04
    ANNOUNCEMENT INFO.; , 39, 4, 38-42
    AUTHOR; Makoto Kasu

General Lectures

  • Crystal defects which relate with leakage current of HVPE (001) b-Ga2O3 Schottky barrier diodes; 2018/11
    ANNOUNCEMENT INFO.; Materials Research Society 2018 Fall Meeting
    AUTHOR; M. Kasu, E. Katagiri, S. Fujita, K. Sasaki, K. Kawasaki, J. Hirabayashi, A. Kuramata, T. Oishi
  • The Interface properties of Al2O3/NO2/H-diamond in MOSFET structure studied by capacitance and conductance and synchrotron XPS/XANES measurements; 2018/11
    ANNOUNCEMENT INFO.; Materials Research Society 2018 Fall Meeting
    AUTHOR; N. C. Saha, K. Takahashi, S. Masuya, M. Imamura, M. Kasu
  • Diamond field-effect transistors fabricated on high-quality heteroepitaxial diamond wafers treated by chemical mechanical polishing technology; 2018/09
    ANNOUNCEMENT INFO.; Int. Conf. Diamond and Carbon Materials (ICDCM)
    AUTHOR; M. Kasu, D. Fujii, S. Masuya, T. Oishi, S. –W. Kim
  • Energy band alignment of Al2O3/NO/H-diamond and Al2O3/SO2/H-diamond heterointerfaces determined by synchrotron XPS/UPS/XANES measurements; 2018/09
    ANNOUNCEMENT INFO.; Int. Conf. Diamond and Carbon Materials (ICDCM) 2019
    AUTHOR; N. C. Saha, K. Takahashi, M. Imamura, M. Kasu
  • Improvement of performance of NO2-doped H-diamond FET by using Au gate metal; 2018/09
    ANNOUNCEMENT INFO.; Int. Conf. Diamond and Carbon Materials (ICDCM) 2018
    AUTHOR; N. C. Saha, M. Kasu
  • The combination of Diamond devices with Si LSI by surface activated bonding; 2018/03
    ANNOUNCEMENT INFO.; Int. Conf. Diamond and Carbon Materials (ICDCM) 2018
    AUTHOR; Jianbo Liang, Satoshi Masuya, Makoto Kasu, and Naoteru Shigekawa
  • Interpolation Method for Missing Data of Measurement in Mega Solar Power Plant Using Wavelet Transforms; 2017/11
    ANNOUNCEMENT INFO.; 27th International Photovoltaic Science and Engineering Conference (PVSEC2017)
    AUTHOR; S. Hara, M. Kasu
  • Subsecond interval measurements of outdoor operated mega solar power plant; 2017/11
    ANNOUNCEMENT INFO.; 27th International Photovoltaic Science and Engineering Conference (PVSEC2017)
    AUTHOR; Shigeomi Hara, Makoto Kasu
  • Interface Properties of Diamond MOS Diodes Studied by Capacitance-Voltage and Conductance Methods - NO2 Hole Doping Effect –; 2017/09
    ANNOUNCEMENT INFO.; 2017 International Conference on Solid State Devices and Materials (SSDM2017)
    AUTHOR; N. C. Saha, M. Kasu
  • en-Millisecond Interval Measurements of Generated Power, Irradiance and Weather at Mega Solar Power Plant; 2017/06
    ANNOUNCEMENT INFO.; International 2017 IEEE Photovoltaic Specialists Conference (PVSC-44)
    AUTHOR; M. Kasu, S. Hara
  • High-Speed Measurements of Generated Power and its Relationship to Weather Observations at Yoshinogari Mega Solar Power Plant; 2017/06
    ANNOUNCEMENT INFO.; International 2017 IEEE Photovoltaic Specialists Conference (PVSC-44)
    AUTHOR; M. Kasu, S. Hara, and T. Uematsu
  • Dependence of String Power on its Height in the Array in Yoshinogari Mega Solar Power Plant; 2017/06
    ANNOUNCEMENT INFO.; International 2017 IEEE Photovoltaic Specialists Conference (PVSC-44)
    AUTHOR; S. Hara, M. Kasu, and Y. Masutomi,
  • Temperature Dependence and Performance Analysis of Photovoltaic Modules; 2017/06
    ANNOUNCEMENT INFO.; 27th International Photovoltaic Science and Engineering Conference (PVSEC2017)
    AUTHOR; J. Abdu, S. Hara, S. Choi, Y. Chiba, A. Masuda, M. Kasu
  • 吉野ヶ里メガソーラーにおける高速測定システムの構築; 2017/03
    ANNOUNCEMENT INFO.; 応用物理学会春季講演会、2017年3月14~17日、横浜
    AUTHOR; 嘉数 誠,原 重臣,植松卓巳
  • ダブルNO2ホールドーピングした水素終端ダイヤモンドMOS FETの連続動作; 2017/03
    ANNOUNCEMENT INFO.; 応用物理学会春季講演会、2017年3月14~17日、横浜
    AUTHOR; 舟木 浩祐,石松 裕真,桝谷 聡士,大島 孝仁,嘉数 誠, 大石 敏之
  • ダイヤモンド素子を用いた高耐圧レクテナ回路の作製; 2017/03
    ANNOUNCEMENT INFO.; 応用物理学会春季講演会、2017年3月14~17日、横浜
    AUTHOR; 河野 直士, 深見 成, 桝谷 聡士,嘉数 誠,大石 敏之
  • (2 ̅01) β-Ga2O3ショットキーバリアダイオードのリーク電流と結晶欠陥との関係; 2017/03
    ANNOUNCEMENT INFO.; 応用物理学会春季講演会、2017年3月14~17日、横浜
    AUTHOR; 森林朋也,橋口明広,大島孝仁,花田賢志,大石敏之,輿 公祥,佐々木公平,倉又朗人,上田 修,嘉数 誠
  • (001) β-Ga2O3ショットキーバリアダイオードのリーク電流と結晶欠陥との関係; 2017/03
    ANNOUNCEMENT INFO.; 応用物理学会春季講演会、2017年3月14~17日、横浜
    AUTHOR; 橋口 明広,森林 朋也,大島 孝仁,大石 敏之,輿 公祥,佐々木 公平, 倉又 朗人,上田 修,嘉数 誠
  • 高温アニールによるダイヤモンド単結晶の積層欠陥の消滅; 2016/09
    ANNOUNCEMENT INFO.; 応用物理学会秋季講演会、2016年9月13~16日、新潟
    AUTHOR; 桝谷 聡士、森林 朋也、角谷 均、嘉数 誠
  • イヤモンドデバイスを用いた無線電力伝送用レクテナの理論的検討; 2016/09
    ANNOUNCEMENT INFO.; 応用物理学会秋季講演会、2016年9月13~16日、新潟
    AUTHOR; 大石 敏之、河野 直士、嘉数 誠
  • 酸化ガリウムダイオードを用いたレクテナ回路動作; 2016/09
    ANNOUNCEMENT INFO.; 応用物理学会秋季講演会、2016年9月13~16日、新潟
    AUTHOR; 河野 直士、大島 孝仁、嘉数 誠、大石 敏之
  • β-Ga2O3ショットキーバリアダイオードのリーク電流と結晶欠陥との関係; 2016/09
    ANNOUNCEMENT INFO.; 応用物理学会秋季講演会、2016年9月13~16日、新潟
    AUTHOR; 橋口 明広、森林 朋也、花田 賢志、大島 孝仁、大石 敏之、輿 公祥、佐々木 公平、倉又 朗人、上田 修、嘉数 誠
  • β-Ga2O3 (010)単結晶のエッチピットの構造; 2016/09
    ANNOUNCEMENT INFO.; 応用物理学会秋季講演会、2016年9月13~16日、新潟
    AUTHOR; 森林 朋也、花田 賢志、輿 公祥、佐々木 公平、倉又 朗人、上田 修、嘉数 誠
  • abrication of Diamond Rectenna Devices for RF Power Transmission; 2016/09
    ANNOUNCEMENT INFO.; 27th International Conference on Diamond and Carbon Materials 2016, Sep 4-8, Monpelie
    AUTHOR; M. Kasu, T. Oisi, N. Kawano, A. Miyachi, and S. Kawasaki
  • Disappearance of stacking faults in single crystal diamond by thermal annealing; 2016/09
    ANNOUNCEMENT INFO.; 27th International Conference on Diamond and Carbon Materials 2016, Sep 4-8, Monpelie
    AUTHOR; S. Masuya, T. Moribayashi , K. Hanada, H. Sumiya , M. Kasu
  • Real –Time Measurement of Hole Doping by NO2 and SO2 Molecular Adsorption on H-Terminated Diamond Surfaces; 2016/09
    ANNOUNCEMENT INFO.; 27th International Conference on Diamond and Carbon Materials 2016, Sep 4-8, Monpelie
    AUTHOR; Kenji Hanada, Makoto Kasu
  • Fabrication of diamond field-effect transistors with double NO2 hole doping and low-temperature-deposited Al2O3 gate insulator layer; 2016/09
    ANNOUNCEMENT INFO.; 27th International Conference on Diamond and Carbon Materials 2016, Sep 4-8, Monpelie
    AUTHOR; M. Kasu, K. Hanada, K. Funaki, S. Masuya, T. Oshima, and T. Oishi
  • Determination of stacking faults in an (111) high pressure/high temperature (HP/HT) diamond single crystals with extremely low defect density via synchrotron X-ray topography; 2016/09
    ANNOUNCEMENT INFO.; 27th International Conference on Diamond and Carbon Materials 2016, Sep 4-8, Monpelie
    AUTHOR; S. Masuya , T. Moribayashi , K. Hanada , H. Sumiya, M. Kasu
  • Synchrotron X-ray topography observation of stacking faults in HPHT diamond single crystal; 2016/03
    ANNOUNCEMENT INFO.; 8th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials / 9th International Conference on Plasma-Nano Technology & Science (ISPlasma2016 / IC-PLANTS2016) March 6-10, 2016 Nagoya
    AUTHOR; S. Masuya, K. Hanada, T. Uematsu, T. Moribayashi, M. Kasu, H. Sumiya
  • シンクロトロンX線トポグラフィーによる低欠陥密度高温高圧合成(110)ダイヤモンド単結晶の積層欠陥の部分転位観察; 2016/03
    ANNOUNCEMENT INFO.; 応用物理学会春季講演会、2016年3月19~22日、東京
    AUTHOR; 桝谷聡士、森林朋也、花田賢志、角谷 均、嘉数 誠
  • シンクロトロンX線トポグラフィーによる低欠陥密度高温高圧合成ダイヤモンド(111)単結晶の積層欠陥観察; 2016/03
    ANNOUNCEMENT INFO.; 応用物理学会春季講演会、2016年3月19~22日、東京
    AUTHOR; 桝谷聡士、森林朋也 、花田賢志、角谷 均、嘉数 誠
  • ダブルNO2ホールドーピングを用いたダイヤモンド電界効果トランジスタの作製; 2016/03
    ANNOUNCEMENT INFO.; 応用物理学会春季講演会、2016年3月19~22日、東京
    AUTHOR; 嘉数 誠、原田 和也、古賀 優太、花田 賢志、大石 敏之
  • -Ga2O3ショットキーバリアダイオード素子特性の分布; 2016/03
    ANNOUNCEMENT INFO.; 応用物理学会春季講演会、2016年3月19~22日、東京
    AUTHOR; 嘉数 誠、原田 和也、花田 賢志、大石 敏之
  • 高濃度Snドープ-Ga2O3(-20 1)単結晶の温度特性の検討; 2016/03
    ANNOUNCEMENT INFO.; 応用物理学会春季講演会、2016年3月19~22日、東京
    AUTHOR; 大石 敏之、嘉数 誠
  • 高効率無線電力伝送を目指したダイヤモンド・レクテナデバイスの提案; 2016/03
    ANNOUNCEMENT INFO.; 応用物理学会春季講演会、2016年3月19~22日、東京
    AUTHOR; 大石 敏之,河野 直士,嘉数 誠
  • β-Ga2O3(010)単結晶のエッチピットの観察; 2016/03
    ANNOUNCEMENT INFO.; 応用物理学会春季講演会、2016年3月19~22日、東京
    AUTHOR; 花田賢志,森林朋也,輿 公祥,佐々木公平,倉又朗人,上田 修,嘉数 誠
  • β-Ga2O3成長結晶の(010)における溝型欠陥の観察; 2016/03
    ANNOUNCEMENT INFO.; 応用物理学会春季講演会、2016年3月19~22日、東京
    AUTHOR; 花田賢志,森林朋也,輿 公祥,佐々木公平,倉又朗人,上田 修,嘉数 誠
  • ダイヤモンド表面のSO2ホールドーピングの実時間測定; 2016/03
    ANNOUNCEMENT INFO.; 応用物理学会春季講演会、2016年3月19~22日、東京
    AUTHOR; 花田 賢志,嘉数 誠
  • ダイヤモンド素子を用いたレクテナ回路の作製; 2016/03
    ANNOUNCEMENT INFO.; 応用物理学会春季講演会、2016年3月19~22日、東京
    AUTHOR; 河野 直士, 大石 敏之, 嘉数 誠
  • Fabrication of Diamond Field-Effect Transistors with Various NO2 Hole-Doping Conditions and Al2O3 Gate Insulator Layers; 2016/03
    ANNOUNCEMENT INFO.; Materials Research Meeting (MRS) Spring Meeting, Phoenix, USA, Mar 28-Apr.1, 2016.
    AUTHOR; Makoto Kasu, Kenji Hanada, Kazuya Harada, Yuta Koga, Kosuke Funaki, and Toshiyuki Oisi,
  • Study on Dislocations and Stacking faults and in High-Pressure High-Temperature Synthesized Type-IIa Diamond Single Crystals by Synchrotron X-ray Topography Observations; 2016/03
    ANNOUNCEMENT INFO.; Materials Research Meeting (MRS) Spring Meeting, Phoenix, USA, Mar 28-Apr.1, 2016.
    AUTHOR; Makoto Kasu, Satoshi Masuya, Kenji Hanada, Tomoya Moribayashi, Hitoshi Sumiya
  • Observation of Crystalline Pits in β-Ga2O3 As-Grown Single Crystals; 2016/03
    ANNOUNCEMENT INFO.; Materials Research Meeting (MRS) Spring Meeting, Phoenix, USA, Mar 28-Apr.1, 2016.
    AUTHOR; Makoto Kasu, Kenji Hanada, Tomoya Moribayashi, Takumi Uematsu, Satoshi Masuya, Kimiyoshi Koshi, Kohei Sasaki, Akito Kuramata, and Osamu Ueda
  • ダイヤモンド単結晶とSi単結晶基板の常温接合; 2016
    ANNOUNCEMENT INFO.; 応用物理学会秋季講演会、2016年9月13~16日、新潟
    AUTHOR; 梁 剣波、桝谷 聡士、嘉数 誠、重川 直輝
  • β-Ga2O3用ITOオーミック電極; 2016
    ANNOUNCEMENT INFO.; 応用物理学会秋季講演会、2016年9月13~16日、新潟
    AUTHOR; 大島 孝仁、若林 諒、服部 真依、橋口 明広、河野 直人、佐々木 公平、増井 建和、倉又 朗人、山腰 茂伸、吉松 公平、大友 明、大石 敏之、嘉数 誠
  • NO2 分子吸着中における水素終端ダイヤモンド表面のホール濃度の測定; 2015/12
    ANNOUNCEMENT INFO.; 表面科学会学術講演会、2015年12月1~3日、つくば
    AUTHOR; 花田賢志, 嘉数誠
  • b-Ga2O3ワイドギャップ半導体単結晶のエッチピットの構造; 2015/12
    ANNOUNCEMENT INFO.; 応用物理学会九州支部大会、2015年12月5~6日、那覇
    AUTHOR; 森林朋也、植松卓巳、桝谷聡士、花田賢志、輿公祥、佐々木公平、倉又朗人、嘉数 誠
  • Etch-Pit Observation of EFG-grown -Ga2O3 Single Crystals; 2015/11
    ANNOUNCEMENT INFO.; International Workshop on Gallium Oxide (IWGO), Nov.3~6, 2015, Kyoto
    AUTHOR; M. Kasu, T. Uematsu, S. Masuya, T. Moribayashi, K. Hanada, K. Koshi, K. Sasaki, and A. Kuramata
  • Fabrication of Schottky Barrier Diodes of EFG-grown Sn-doped b-Ga2O3 (-201) Single-Crystals; 2015/11
    ANNOUNCEMENT INFO.; International Workshop on Gallium Oxide (IWGO), Nov.3~6, 2015, Kyoto
    AUTHOR; Y. Koga, K. Harada, K. Hanada, T. Oishi, and M. Kasu
  • Estimation Method of Solar Cell Temperature Using Meteorological Data in Mega Solar Power Plant,; 2015/11
    ANNOUNCEMENT INFO.; 25th International Photovoltatic Science and Engineering Conference (PVSEC-25), Nov. 16-20, Busan
    AUTHOR; S. Hara, H. Tanaka, M. Kasu, N. Matsui
  • Estimation Method of Characteristic Parameters of Strings in Mega Solar Power Plant; 2015/11
    ANNOUNCEMENT INFO.; 25th International Photovoltatic Science and Engineering Conference (PVSEC-25), Nov. 16-20, Busan
    AUTHOR; Shigeomi Hara, Makoto Kasu, Noriaki Matsui,
  • シンクロトロンX線トポグラフィー透過法によるHPHT単結晶ダイヤモンドの 転位の観察; 2015/11
    ANNOUNCEMENT INFO.; 第29回ダイヤモンドシンポジウム、2015年11月19日~21日
    AUTHOR; 桝谷聡士、村上竜一、角谷均、嘉数 誠
  • 高温高圧合成ダイヤモンド単結晶の積層欠陥の放射光X線トポグラフィ観察; 2015/11
    ANNOUNCEMENT INFO.; ダイヤモンドシンポジウム、2015年11月17=19日、東京
    AUTHOR; 桝谷聡士、花田賢志、植松卓巳、森林朋也、角谷 均、嘉数 誠
  • EFG成長β- Ga2O3単結晶のエッチピットの観察; 2015/10
    ANNOUNCEMENT INFO.; 結晶成長学会国内会議2015年10月~21日、札幌
    AUTHOR; 花田賢志,森林朋也,植松卓巳,桝谷聡士,嘉数誠,輿公祥,佐々木公平,倉又朗人
  • シンクロトロンX線トポグラフィによる高温高圧合成ダイヤモンド(110)単結晶の積層欠陥の評価; 2015/10
    ANNOUNCEMENT INFO.; 
    AUTHOR; 桝谷聡士、花田賢志、植松卓巳、森林朋也、嘉数誠、角谷均
  • シンクロトロンX線トポグラフィーによる高品質高温高圧合成ダイヤモンド 単結晶の転位の種類の同定; 2015/10
    ANNOUNCEMENT INFO.; 結晶成長学会国内会議、札幌、2015年10月19日~21日
    AUTHOR; 嘉数 誠,村上竜一、桝谷聡士、原田和也、角谷 均
  • b-Ga2O3(01 ̅0)単結晶のエッチピット観察; 2015/09
    ANNOUNCEMENT INFO.; 応用物理学会秋季学術講演会2015年9月13日~16日、名古屋
    AUTHOR; 植松卓巳、桝谷聡士、森林朋也、花田賢志、輿公祥、飯塚和幸、倉又郎人、嘉数 誠
  • シンクロトロンX線トポグラフィによる高温高圧合成ダイヤモンド単結晶の積層欠陥の観察; 2015/09
    ANNOUNCEMENT INFO.; 応用物理学会秋季学術講演会2015年9月13日~16日、名古屋
    AUTHOR; 植松卓巳、桝谷聡士、花田賢志、角谷 均、嘉数 誠
  • Snドープb-Ga2O3(-2 0 1)単結晶のショットキーバリアダイオードの作製; 2015/09
    ANNOUNCEMENT INFO.; 応用物理学会秋季学術講演会2015年9月13日~16日、名古屋
    AUTHOR; 古賀 優太、原田 和也、花田 賢志、大石 敏之、嘉数 誠
  • NO2分子によるホールドーピングを用いた水素終端ダイヤモンド電界効果トランジスタの作製; 2015/09
    ANNOUNCEMENT INFO.; 応用物理学会秋季学術講演会2015年9月13日~16日、名古屋
    AUTHOR; 古賀 優太、原田 和也、花田 賢志、大石 敏之、嘉数 誠
  • NO2 吸着ダイヤモンドFET のデバイスモデルの提案; 2015/09
    ANNOUNCEMENT INFO.; 電子情報通信学会ソサエティー大会2015年9月8日(火)~11日(金), 仙台
    AUTHOR; 大石 敏之、 岸川 拓也、 吉川 大地、 古賀 優太、 嘉数 誠
  • Synchrotron X-ray Topography Observation of (110) HPHT type-IIa Diamond Single Crystals; 2015/05
    ANNOUNCEMENT INFO.; International Conference on New Diamond and Nano Carbon (NDNC), May 24~28, 2015, Shizuoka
    AUTHOR; M.Kasu, R.Murakami, S.Masuya, T.Uematsu, and H.Sumiya
  • シンクロトロンX線トポグラフィーによる(110)高温高圧合成ダイヤモンド単結晶の観察; 2015/03
    ANNOUNCEMENT INFO.; 
    AUTHOR; 
  • メガソーラー測定データを用いた太陽電池セル温度の推定; 2015/03
    ANNOUNCEMENT INFO.; 
    AUTHOR; 
  • 太陽電池モジュールの半導体素子としての電気的特性解析; 2015/03
    ANNOUNCEMENT INFO.; 
    AUTHOR; 
  • 高移動度-Ga2O3単結晶(-201 )を用いたショットキーバリアダイオードの作製; 2015/03
    ANNOUNCEMENT INFO.; 
    AUTHOR; 
  • 高圧高温合成ダイヤモンド単結晶のX線トポグラフィー観察による転位の同定; 2014/12
    ANNOUNCEMENT INFO.; 
    AUTHOR; 
  • Ni/Auを用いた����–Ga2O3のショットキーバリアダイオードの作製; 2014/12
    ANNOUNCEMENT INFO.; 
    AUTHOR; 
  • ソーラーパネルのホットスポット観察と電流電圧特性; 2014/12
    ANNOUNCEMENT INFO.; 
    AUTHOR; 
  • Diamond MOS Interface Properties Studied by XPS/UPS/XANES and C-V Measurements; 2014/11
    ANNOUNCEMENT INFO.; The 7th International Symposium on Surface Science, Matsue, November 2 - 6, 2014
    AUTHOR; M. Kasu, K. Hirama, K. Harada, M. Imamura, K. Takahashi, K. Shiraishi
  • シンクロトロンX線トポグラフィーによる高品質高温高圧合成ダイヤモンド単結晶の転位の種類の同定; 2014/11
    ANNOUNCEMENT INFO.; 
    AUTHOR; 
  • Device Operation Analysis of Diamond MOSFET Obtained by Capacitance–Voltage Characteristics; 2014/09
    ANNOUNCEMENT INFO.; International Conference on Diamond and Related Carbons 2014 (ICDCM2014), Madrid, September 7 - 11, 2014
    AUTHOR; K. Harada, K. Hirama, T. Oishi, M. Kasu
  • Dislocation Identification of HPHT Diamond Single Crystal Using Synchrotron Light • X-ray Topography Observation; 2014/09
    ANNOUNCEMENT INFO.; International Conference on Diamond and Related Carbons 2014 (ICDCM2014), Madrid, September 7 - 11, 2014
    AUTHOR; M. Kasu, R. Murakami, S. Masuya, A. Matsunaga, K. Harada, and H. Sumiya
  • Synchrotron X-ray Topography Observation of CVD Diamond Single Crystal; 2014/09
    ANNOUNCEMENT INFO.; International Conference on Diamond and Related Carbons 2014 (ICDCM2014), Madrid, September 7 - 11, 2014
    AUTHOR; S. Masuya, R. Murakami, K. Harada, H. Sumiya , M. Kasu
  • シンクロトロン光・単色X線トポグラフィーによる高温高圧合成ダイヤモンド単結晶の反りの高精度測定; 2014/09
    ANNOUNCEMENT INFO.; 2014年秋季応用物理学会学術講演会、札幌、2014年9月17-20日
    AUTHOR; 
  • (-201)及びB 面β-Ga2O3 単結晶のシンクロトロン単色X 線トポグラフィー観察; 2014/09
    ANNOUNCEMENT INFO.; 2014年秋季応用物理学会学術講演会、札幌、2014年9月17-20日
    AUTHOR; 
  • ダイヤモンドMOSFETのゲート容量の周波数依存性; 2014/09
    ANNOUNCEMENT INFO.; 
    AUTHOR; 
  • β-Ga2O3単結晶のシンクロトロンX線トポグラフィー観察; 2014/03
    ANNOUNCEMENT INFO.; 
    AUTHOR; 
  • ダイヤモンドMOSFETの容量電圧特性の測定と解析; 2014/03
    ANNOUNCEMENT INFO.; 
    AUTHOR; 
  • β-Ga2O3単結晶のホール電子濃度と移動度の測定と解析; 2014/03
    ANNOUNCEMENT INFO.; 
    AUTHOR; 
  • β-Ga2O3単結晶のシンクロトロンX線トポグラフィー観察; 2014/03
    ANNOUNCEMENT INFO.; 
    AUTHOR; 
  • CVD成長ダイヤモンド単結晶のシンクロトロン光・X線トポグラフィー観察; 2014/03
    ANNOUNCEMENT INFO.; 
    AUTHOR; 
  • NO2曝露・水素終端ダイヤモンド/Al2O3ヘテロ界面のバンド不連続の放射光XPS/UPS/XANES測定; 2014/03
    ANNOUNCEMENT INFO.; 
    AUTHOR; 
  • シンクロトロン光・X線トポグラフィー観察を用いた高温高圧合成ダイヤモンド単結晶の転位の同定; 2014/03
    ANNOUNCEMENT INFO.; 
    AUTHOR; 
  • 高移動度b-Ga2O3単結晶(-201 )を用いたショットキーバリアダイオードの作製; 2014
    ANNOUNCEMENT INFO.; 
    AUTHOR; 
  • NO2吸着・水素終端ダイヤモンド/ALD成長Al2O3界面の放射光XPS/UPSによる電子状態評価; 2013/11
    ANNOUNCEMENT INFO.; 
    AUTHOR; 
  • β-Ga2O3のホール効果測定による電子濃度と移動度の解析; 2013/11
    ANNOUNCEMENT INFO.; 
    AUTHOR; 
  • 高圧高温合成ダイヤモンド単結晶のシンクロトロン光を用いたX線トポグラフィー観察; 2013/11
    ANNOUNCEMENT INFO.; 
    AUTHOR; 
  • CVD成長ダイヤモンド単結晶のX線トポグラフィー観察; 2013/11
    ANNOUNCEMENT INFO.; 
    AUTHOR; 
  • SiC-MOSFETのスイッチング特性解析―SiCパワーMOSFETとの比較―; 2013/11
    ANNOUNCEMENT INFO.; 
    AUTHOR; 
  • マイクロ波プラズマCVD成長ダイヤモンドを用いたパワー高周波FET; 2013/10
    ANNOUNCEMENT INFO.; 
    AUTHOR; 
  • ダイヤモンド単結晶のX線トポグラフィ評価、マイクロ波プラズマCVD成長と高圧高温合成の比較; 2013/10
    ANNOUNCEMENT INFO.; 
    AUTHOR; 
  • パワー半導体ダイヤモンド単結晶の放射光X線トポグラフィ観察; 2013/07
    ANNOUNCEMENT INFO.; 
    AUTHOR; 
  • 高温高圧合成ダイヤモンド単結晶のシンクロトロン光を用いたX線トポグラフィー観察; 2013/03
    ANNOUNCEMENT INFO.; 
    AUTHOR; 
  • β-Ga2O3単結晶のシンクロトロン光を用いたX線トポグラフィー評価; 2012/11
    ANNOUNCEMENT INFO.; 
    AUTHOR; 
  • Thermal Stabilization of H-Terminated Diamond Surface by Using Al2O3 Overlayer and its Stable and Improved Field-Effect Transistors; 2012/09
    ANNOUNCEMENT INFO.; 2012 International Conference on Diamond and Related Carbon Materials
    AUTHOR; M. Kasu, K. Hirama, H. Sato, and Y. Harada
  • Critical hole concentration for H-terminated diamond surfaces with various surface orientations obtained by high-concentrated NO2 exposure; 2012/09
    ANNOUNCEMENT INFO.; 
    AUTHOR; Hisashi Sato and Makoto Kasu
  • 高濃度NO2ガスを用いた様々な面方位をもつ水素終端ダイヤモンド表面へのホールドーピング; 2012/09
    ANNOUNCEMENT INFO.; 
    AUTHOR; 
  • NO2吸着とAl2O3パッシベーションにより熱的安定化した水素終端ダイヤモンドFETのドレイン電流の増大; 2012/09
    ANNOUNCEMENT INFO.; 
    AUTHOR; 
  • 水素終端ダイヤモンド表面の正孔生成機構:吸着分子の特定と第一原理計算結果; 2012/06
    ANNOUNCEMENT INFO.; 
    AUTHOR; 
  • Inorganic Molecular Hole Doping on H-terminated Diamond Surface; Critical Hole Concentration for Various Orientations and the First-Principle Calculations; 2012/05
    ANNOUNCEMENT INFO.; New Diamond and Nano Carbons Conference 2012
    AUTHOR; M. Kasu, H. Sato, Y. Takagi, K. Shiraishi
  • Al2O3パッシベーションにより熱的安定化した水素終端ダイヤモンドFET; 2012/03
    ANNOUNCEMENT INFO.; 
    AUTHOR; 
  • NO2吸着水素終端ダイヤモンド表面の熱的安定化と高温域の電気的特性; 2012/03
    ANNOUNCEMENT INFO.; 
    AUTHOR; 
  • 単結晶ダイヤモンドにおエピタキシャル成長したAlGaN/GaN HEMTの高周波高出力動作; 2011/12
    ANNOUNCEMENT INFO.; 
    AUTHOR; 
  • 高濃度NO2吸着による水素終端ダイヤモンドの正孔濃度の増加とFET特性の改善; 2011/12
    ANNOUNCEMENT INFO.; 
    AUTHOR; 
  • Critical Hole Concentration of H-terminated Diamond and Hole Generation Model during NO2 and O3 adsorption; 2011/12
    ANNOUNCEMENT INFO.; 
    AUTHOR; Hisashi Sato, Makoto Kasu, Kazuyuki Hirama,

Other Lectures

  • 2017/05
    ANNOUNCEMENT INFO.; 11th Conference on New Diamond and Nano Carbons (NDNC2017)
    AUTHOR; S. Masuya, M. Kasu
  • 究極のパワー半導体ダイヤモンド; 2012/10
    ANNOUNCEMENT INFO.; 
    AUTHOR; 

Invited Lecture, Special Lecture

  • Recent progress of diamond field-effect transistor technologies; 2018/11
    ANNOUNCEMENT INFO.; 
    AUTHOR; Makoto Kasu
  • Diamond field-effect transistors for RF power applications; 2018/10
    ANNOUNCEMENT INFO.; 4th E-MRS & MRS-J BILATERAL SYMPOSIUM, Advanced Oxides and Wide Bandgap Semiconductors
    AUTHOR; Makoto Kasu
  • Recent Progress of Diamond Devices for RF Applications; 2016/10
    ANNOUNCEMENT INFO.; 2016 IEEE Compound Semiconductor IC Symposium
    AUTHOR; Makoto Kasu, Toshiyuki Oishi
  • Diamond Devices for RF Applications; 2016/08
    ANNOUNCEMENT INFO.; 2016 URSI Asia-Pacific Radio Science Conference
    AUTHOR; Makoto Kasu, Toshiyuki Oishi
  • Diamond FETs for RF Power Electronics; Novel Hole Doping; 2016/03
    ANNOUNCEMENT INFO.; 8th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials / 9th International Conference on Plasma-Nano Technology & Science (ISPlasma2016 / IC-PLANTS2016) March 6-10, 2016 Nagoya
    AUTHOR; Makoto Kasu
  • ダイヤモンドMOSFET界面研究の最近の進展; 2015/12
    ANNOUNCEMENT INFO.; 表面科学会学術講演会、2015年12月1~3日、つくば
    AUTHOR; 嘉数 誠
  • Ultimate Wide-Gap Semiconductors:Diamond Power Devices and Aluminum Nitride Deep-Ultraviolet LEDs; 2015/09
    ANNOUNCEMENT INFO.; Semicon Nano 2015, Hsinchu, Taiwan, Sep. 6-11,2015.
    AUTHOR; Makoto Kasu
  • Diamond Transistors –Present Status and Future Prospects; 2015/06
    ANNOUNCEMENT INFO.; Collaborative Conference on 3D & Materials Research (CC3DMR) 2015
    AUTHOR; Makoto Kasu
  • Diamond RF Power Transistors: Present Status and Challenges; 2014/11
    ANNOUNCEMENT INFO.; 2014 MRS Fall Meeting, Nov. 30 – Dec. 5, 2014.Boston
    AUTHOR; M. Kasu
  • Diamond RF Power Transistors: Present Status and Challenges; 2014/10
    ANNOUNCEMENT INFO.; 9th European Microwave Integrated Circuits Conference (EUMIC 2014), Oct 6-7, 2014, Rome.
    AUTHOR; M. Kasu, T. Oishi
  • パワー半導体ダイヤモンド単結晶のシンクロトロンX線トポグラフィー観察; 2014/10
    ANNOUNCEMENT INFO.; 
    AUTHOR; 嘉数 誠
  • ダイヤモンドパワートランジスタ研究開発の最近の進展; 2014/09
    ANNOUNCEMENT INFO.; 日本学術振興会真空ナノエレクトロニクス第158委員会 第104回研究会, 京都、2014年9月24日
    AUTHOR; M. Kasu
  • Diamond RF Power Transistors: Present Status and Challenges; 2014/08
    ANNOUNCEMENT INFO.; 15th IUMRS International Conference in Asia (IUMRS-ICA), Fukuoka, Aug. 24-30 , 2014.
    AUTHOR; M. Kasu
  • ダイヤモンドパワーデバイス研究の現状; 2014/05
    ANNOUNCEMENT INFO.; ワイドバンドギャップ半導体デバイスに関わる超精密加工プロセス研究分科会
    AUTHOR; M. Kasu
  • ダイヤモンドパワー素子技術; 2014/05
    ANNOUNCEMENT INFO.; 第8回集積化MEMS技術研究会「次世代半導体技術」
    AUTHOR; M. Kasu
  • ダイヤモンドへのイオン注入 パワーデバイスを目指して; 2013/12
    ANNOUNCEMENT INFO.; 
    AUTHOR; 
  • 極限遠紫外線LED研究開発; 2013/02
    ANNOUNCEMENT INFO.; 
    AUTHOR; 
  • ワイドギャップ半導体の創製と光電子デバイスへの応用; 2012/12
    ANNOUNCEMENT INFO.; 
    AUTHOR; 
  • 半導体気相成長での過飽和度とステップフロー・核形成; 2012/09
    ANNOUNCEMENT INFO.; 
    AUTHOR; 
  • ダイヤモンドパワーデバイスの研究開発の現状; 2012/08
    ANNOUNCEMENT INFO.; 
    AUTHOR; 
  • Single-crystalline nitride growth on diamond; 2012/05
    ANNOUNCEMENT INFO.; New Diamond and Nano Carbons Conference 2012
    AUTHOR; K. Hirama, M. Kasu,
  • 「ダイヤモンドパワーデバイスの開発・技術動向と応用及び今後の展開」; 2012/05
    ANNOUNCEMENT INFO.; 
    AUTHOR; 
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