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Quasi-Physical Equivalent Circuit Model of RF Leakage Current in Substrate Including Temperature Dependence for GaN-HEMT on Si

著者：

Yutaro Yamaguchi; Toshiyuki Oishi

題名：

発表情報：

IEEE Transactions on Microwave Theory and Techniques 巻: 71 号: 5 ページ: 1945 - 1956

キーワード：

概要：

抄録：

Author：

Yutaro Yamaguchi; Toshiyuki Oishi

Title：

Quasi-Physical Equivalent Circuit Model of RF Leakage Current in Substrate Including Temperature Dependence for GaN-HEMT on Si

Announcement information:

IEEE Transactions on Microwave Theory and Techniques Vol: 71 Issue: 5 Page: 1945 - 1956