日本語フィールド
著者:H.Sayama, S.Shimizu, Y.Nishida, T.Kuroi, Y.Kanda, M.Fujisawa, Y.Inoue, T.Nishimura, T.Oishi, T.Nakahara, T.Furukawa, D.Yamakawa, Y.Abe, S.Maruno, Y.Tokuda, S.Satoh題名:Low resistance Co-salicided 0.1 μm CMOS technology using selective Si growth発表情報:Digest of Technical Papers of Symposium on VLSI Technology (VLSI Symp. 1999), June 14-16, 1999, Kyoto, pp.55-56.キーワード:概要:抄録:英語フィールド
Author:H.Sayama, S.Shimizu, Y.Nishida, T.Kuroi, Y.Kanda, M.Fujisawa, Y.Inoue, T.Nishimura, T.Oishi, T.Nakahara, T.Furukawa, D.Yamakawa, Y.Abe, S.Maruno, Y.Tokuda, S.SatohTitle:Low resistance Co-salicided 0.1 μm CMOS technology using selective Si growthAnnouncement information:Digest of Technical Papers of Symposium on VLSI Technology (VLSI Symp. 1999), June 14-16, 1999, Kyoto, pp.55-56.