日本語フィールド
著者:M.Suita, T.Nanjo, T.Oishi, Y.Abe, K.Marumoto題名:Ion implantation doping for AlGaN/GaN HEMTs発表情報:The 6th International Conference on Nitride Semiconductors (ICNS2005), Aug. 28- Sep. 2, 2005, Bremen Germany, Th-P-011.キーワード:概要:抄録:英語フィールド
Author:M.Suita, T.Nanjo, T.Oishi, Y.Abe, K.MarumotoTitle:Ion implantation doping for AlGaN/GaN HEMTsAnnouncement information:The 6th International Conference on Nitride Semiconductors (ICNS2005), Aug. 28- Sep. 2, 2005, Bremen Germany, Th-P-011.