日本語フィールド
著者:T.Nanjo, M.Takeuchi, M.Suita, Y.Abe, T.Oishi, Y.Tokuda, and Y.Aoyagi題名:Remarkable breakdown voltage enhancement in AlGaN channel HEMTs発表情報:Technical Digest of 2007 International Electron Devices Meeting (IEDM2007), December 10-12, 2007, Washington DC, pp.397-400.キーワード:概要:抄録:英語フィールド
Author:T.Nanjo, M.Takeuchi, M.Suita, Y.Abe, T.Oishi, Y.Tokuda, and Y.AoyagiTitle:Remarkable breakdown voltage enhancement in AlGaN channel HEMTsAnnouncement information:Technical Digest of 2007 International Electron Devices Meeting (IEDM2007), December 10-12, 2007, Washington DC, pp.397-400.