日本語フィールド
著者:T.Oishi, K.Hayashi, Y.Yamaguchi, H.Otsuka, K.Yamanaka, M.Nakayama, and Y.Miyamoto題名:Mechanism study of gate leakage current for AlGaN/GaN HEMT structure under high reverse bias by TSB model and TCAD simulation発表情報:Extended Abstracts of the 2012 International Conference on Solid State Devices and Materials (SSDM2012), September 25-27, 2012, Kyoto, Japan, pp.907-908.キーワード:概要:抄録:英語フィールド
Author:T.Oishi, K.Hayashi, Y.Yamaguchi, H.Otsuka, K.Yamanaka, M.Nakayama, and Y.MiyamotoTitle:Mechanism study of gate leakage current for AlGaN/GaN HEMT structure under high reverse bias by TSB model and TCAD simulationAnnouncement information:Extended Abstracts of the 2012 International Conference on Solid State Devices and Materials (SSDM2012), September 25-27, 2012, Kyoto, Japan, pp.907-908.