日本語フィールド
著者:T.Nanjo, .Takeuchi, M.Suita, Y.Abe, T.Oishi, Y.Tokuda, and Y.Aoyagi題名:First Operation of AlGaN Channel High Electron Mobility Transistors発表情報:Applied Physics Express 1 (2008) 011101.キーワード:概要:抄録:英語フィールド
Author:T.Nanjo, .Takeuchi, M.Suita, Y.Abe, T.Oishi, Y.Tokuda, and Y.AoyagiTitle:First Operation of AlGaN Channel High Electron Mobility TransistorsAnnouncement information:Applied Physics Express 1 (2008) 011101.