日本語フィールド
著者：H.Otsuka, T.Oishi, K.Yamanaka, M.Thorsell, K.Andersson, A.Inoue, Y.Hirano and I.Angelov題名：Semi-physical nonlinear circuit model with device/physical parameters for HEMTs発表情報：International Journal of Microwave and Wireless Technologies 3 (2011) pp.25–33.キーワード：概要：抄録：英語フィールド
Author：H.Otsuka, T.Oishi, K.Yamanaka, M.Thorsell, K.Andersson, A.Inoue, Y.Hirano and I.AngelovTitle：Semi-physical nonlinear circuit model with device/physical parameters for HEMTsAnnouncement information:International Journal of Microwave and Wireless Technologies 3 (2011) pp.25–33.