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Production of high-density capacitively coupled plasma with RF multi-hollow cathode and/or high secondary electron emission for DLC film preparation

発表形態:
原著論文
主要業績:
主要業績
単著・共著:
共著
発表年月:
2009年10月
DOI:
会議属性:
指定なし
査読:
有り
リンク情報:

日本語フィールド

著者:
Yasunori Ohtsu, Chisa Nakamura, Tatsuya Misawa, Hiroharu Fujita, Morito Akiyama and Ken Yukimura
題名:
Production of high-density capacitively coupled plasma with RF multi-hollow cathode and/or high secondary electron emission for DLC film preparation
発表情報:
Plasma Process and Polymer 巻: 6 号: S1 ページ: S458-S461
キーワード:
概要:
抄録:
The effects of a hollow cathode discharge and secondary electron emission from a radiofrequency-biased electrode on the growing rate of diamond-like carbon films were studied.The rate of deposition for amorphous hydrogenous carbon thin films of about 200 nm/min was attained at a voltage of -700 V with radio-frequency plasma using CH4 gas. Because of its non-uniformity, the profile was improved by changing the hole arrangement. A radial roughness of the deposited films of about 35 nm, for a film thickness of about 1 micron, was obtained with the best arrangement.

英語フィールド

Author:
Yasunori Ohtsu, Chisa Nakamura, Tatsuya Misawa, Hiroharu Fujita, Morito Akiyama and Ken Yukimura
Title:
Production of high-density capacitively coupled plasma with RF multi-hollow cathode and/or high secondary electron emission for DLC film preparation
Announcement information:
Plasma Process and Polymer Vol: 6 Issue: S1 Page: S458-S461
An abstract:
The effects of a hollow cathode discharge and secondary electron emission from a radiofrequency-biased electrode on the growing rate of diamond-like carbon films were studied.The rate of deposition for amorphous hydrogenous carbon thin films of about 200 nm/min was attained at a voltage of -700 V with radio-frequency plasma using CH4 gas. Because of its non-uniformity, the profile was improved by changing the hole arrangement. A radial roughness of the deposited films of about 35 nm, for a film thickness of about 1 micron, was obtained with the best arrangement.


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