日本語フィールド
著者：Y.Ohtsu and H.Fujita題名：Production of high-density capacitive plasma by the effects of multi-hollow cathode discharge and high-secondary-electron-emissio発表情報：Applied Physic Letters 巻: 92 号: 17 ページ: 171501-1-171501-3キーワード：概要：抄録：High-density capacitively coupled plasma with electron density of 10^11 cm^−3 was produced with the effects of the multihollow cathode discharge and the high-secondary-electron emission from radio frequency rf-biased electrode using Ar gas. It was found that the optimum pressure was around 3–15 Pa. In the case of only multihollow cathode discharge, the plasma density increased from 1.2x10^10 to 8x10^10 cm^−3 with the increasing distance z from the cathode electrode for 5 mm < z < 15 mm. Moreover, plasma density increased with increasing voltage of rf-biased electrode. The rate of deposited amorphous hydrocarbon thin films of about 200 nm/min was attained with the
high-density rf plasma enhanced chemical vapor deposition using CH_4 gas.英語フィールド
Author：Y.Ohtsu and H.FujitaTitle：Production of high-density capacitive plasma by the effects of multi-hollow cathode discharge and high-secondary-electron-emissioAnnouncement information:Applied Physic Letters Vol: 92 Issue: 17 Page: 171501-1-171501-3An abstract：High-density capacitively coupled plasma with electron density of 10^11 cm^−3 was produced with the effects of the multihollow cathode discharge and the high-secondary-electron emission from radio frequency rf-biased electrode using Ar gas. It was found that the optimum pressure was around 3–15 Pa. In the case of only multihollow cathode discharge, the plasma density increased from 1.2x10^10 to 8x10^10 cm^−3 with the increasing distance z from the cathode electrode for 5 mm < z < 15 mm. Moreover, plasma density increased with increasing voltage of rf-biased electrode. The rate of deposited amorphous hydrocarbon thin films of about 200 nm/min was attained with the
high-density rf plasma enhanced chemical vapor deposition using CH_4 gas.