日本語フィールド
著者:Q. X. Guo, H. Senda, K. Saito, T. Tanaka, M. Nishio, J. Ding, T. X. Fan, D. Zhang, X. Q. Wang, S. T. Liu, B. Shen, and R. Ohtani題名:
Electronic structure of GaInN semiconductors investigated by x-ray absorption spectroscopy発表情報:Applied Physics Letters 98 (2011) 181901 (3pages).キーワード:概要:抄録:英語フィールド
Author:Q. X. Guo, H. Senda, K. Saito, T. Tanaka, M. Nishio, J. Ding, T. X. Fan, D. Zhang, X. Q. Wang, S. T. Liu, B. Shen, and R. OhtaniTitle:
Electronic structure of GaInN semiconductors investigated by x-ray absorption spectroscopyAnnouncement information:Applied Physics Letters 98 (2011) 181901 (3pages).