日本語フィールド
著者:Qixin GUO, Keisuke TAIRA, Tooru TANAKA, Mitsuhiro NISHIO, and Hiroshi OGAWA,題名:Epitaxial growth of InN on (111) silicon substrates,発表情報:The International Conference on Electrical Engineering 2007, HongKong, July 8-12, 2007, ICEE-080.キーワード:概要:抄録:英語フィールド
Author:Qixin GUO, Keisuke TAIRA, Tooru TANAKA, Mitsuhiro NISHIO, and Hiroshi OGAWA,Title:Epitaxial growth of InN on (111) silicon substrates,Announcement information:The International Conference on Electrical Engineering 2007, HongKong, July 8-12, 2007, ICEE-080.