日本語フィールド
著者:Q.X. Guo, T. Tanaka, M. Nishio, and H. Ogawa題名:Epitaxial growth properties of AlN films on sapphire substrates by reactive sputtering発表情報:THE EIGHTH INTERNATIONAL SYMPOSIUM ON SPUTTERING and PLASMA PROCESSES Kanazawa, June 8, 2005キーワード:概要:抄録:英語フィールド
Author:Q.X. Guo, T. Tanaka, M. Nishio, and H. OgawaTitle:Epitaxial growth properties of AlN films on sapphire substrates by reactive sputteringAnnouncement information:THE EIGHTH INTERNATIONAL SYMPOSIUM ON SPUTTERING and PLASMA PROCESSES Kanazawa, June 8, 2005