日本語フィールド
著者:Q.X. Guo, A. Okada, H. Kidera, T. Tanaka, M. Nishio, H. Ogawa題名:Investigation into the influence of GaN buffer layer on crystallinity of InN発表情報:13th International Conference on Crystal Growth (ICCG13), Kyoto, July 30-August 4, 2001キーワード:概要:抄録:英語フィールド
Author:Q.X. Guo, A. Okada, H. Kidera, T. Tanaka, M. Nishio, H. OgawaTitle:Investigation into the influence of GaN buffer layer on crystallinity of InNAnnouncement information:13th International Conference on Crystal Growth (ICCG13), Kyoto, July 30-August 4, 2001