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X-ray absorption near-edge fine structure study of AlInN semiconductors

著者：

Qixin Guo, Jian Ding, Tooru Tanaka, Mitsuhiro Nishio, and Hiroshi Ogawa

題名：

発表情報：

APPLIED PHYSICS LETTERS 巻: 86 号: 11 ページ: 111911

キーワード：

概要：

抄録：

Author：

Qixin Guo, Jian Ding, Tooru Tanaka, Mitsuhiro Nishio, and Hiroshi Ogawa

Title：

X-ray absorption near-edge fine structure study of AlInN semiconductors

Announcement information:

APPLIED PHYSICS LETTERS Vol: 86 Issue: 11 Page: 111911